Mihai Adrian Ionescu

Nationality: Swiss and Romanian

EPFL STI IEL NANOLAB
ELB 335 (Bâtiment ELB)
Station 11
1015 Lausanne

Expertise

Nanoelectronic devices
Nanotechnology
Steep-slope tunnel FETs and ferroelectric FETs
Energy efficient nanoelectronics for sustainability
Qubits for Quantum Computing
Edge AI sensors
Modeling and Simulation of Solid-State Electronic Devices
Lab On Skin Technology for Digital twins

Expertise

Nanoelectronic devices
Nanotechnology
Steep-slope tunnel FETs and ferroelectric FETs
Energy efficient nanoelectronics for sustainability
Qubits for Quantum Computing
Edge AI sensors
Modeling and Simulation of Solid-State Electronic Devices
Lab On Skin Technology for Digital twins

Mission

Nanolab is working on various subjects in the field of micro/nano-electronics with special emphasis on: (i) energy efficient devices and their integration in circuits and systems to achieve low power electronic functions, (ii) Edge AI and IoT smart sensors for real-time small-foot-print aplications, (iii) phase change and ferroelectric materials for reconfigurable RF and neuromorphic computation, (iv) novel architectures of silicon qubits for scalable Quantum Computing. The lab makes important effort to support the sustainability of future electronics platforms at three levels: (1) by contributing to energy efficiency, (2) by prioritizing materials that are abundant on Earth, and, (3) by working and/or developing with non-toxic fabrication processes.

Current work

Advaced ERC Grant Millitech (https://cordis.europa.eu/project/id/695459/de) Milli-Volt Switch Technologies for Energy Efficient Computation and Sensing
The Milli-Tech proposal aims at a novel technology platform serving both computation and sensing: electronic switch architectures, called steep slope switches, exploiting new device physics and concepts in emerging 2D materials to achieve operation at voltages below 100 millivolts. The project develops a technological platform called ‘millivolt technology' focusing on low power digital and sensing/analog electronic functions exploiting steep slopes, with the goal of lowering the energy per useful function (computed and sensed bit of information) by a factor of 100x.
Such ultra-low operation voltage will contribute to solving major challenges of nanoelectronics such as power issues and it will enable energy efficient super-sensitive sensors for Internet-of-Everything (IoE). Milli-Tech includes fundamental research on new solid-state steep slope device concepts: heterostructure tunnel FETs in 2D Transition-Metal-Dichalcogenides (TMD), 2D Van der Waals super-lattice energy filter switch and hybrid architectures combining two switching principles: band-to-band-tunneling and metal-insulator-transition or negative capacitance in VO2, used as additive technology boosters.
DIGIPREDICT FET Proactive Project (https://ec.europa.eu/newsroom/horizon2020/items/699059)
- DIGIPREDICT proposes the first of its kind digital twin to predict the progression of disease and the need for early intervention in infectious and cardiovascular diseases. A digital twin is a digital representation of an object or process from the real world in the digital world & and more specifically for the case of DIGIPREDICT & of a patient. The project combines the latest advances in digital biomarkers, organ-on-chip (OoC) and artificial intelligence at the edge, and aims to build a new interdisciplinary community in Europe focused on digital twins.
The developed system will provide medical doctors with a unique digital tool for early prediction of potential serious complications in COVID-19 patients. Beyond COVID-19, the system promises to also improve the prevention, diagnosis, monitoring and treatment of cardiovascular disease and detect the potential onset of inflammatory disease.
This multi- and cross-disciplinary project will combine scientific excellence with engineering know-how, and leverage the expertise of doctors, biologists, electrical engineers, computer scientists, signal-processing engineers and social scientists from across Europe .

SINERGIA NEMO
Project - The NeMO (neuromimetic metal-oxide memristors) Sinergia project aims to develop fundamental understanding, optimized materials and novel device architectures for the engineering of highly tunable metal-oxide neuromimetic memristors. Mimicking biological neurons, the devices that we will develop will operate in voltage (100 to 200mV peak-to-peak) and frequency (0.1KHz to 1 MHz) ranges that will make them 100x more energy efficient than today's equivalent CMOS-based hardware. They will therefore enable implementation of highly energy efficient neuro-mimetic computational hardware for next generation information technologies.
This ambitious goal needs a multidisciplinary approach combining theoretical and computational material science, solid-state physics and chemistry, and electronic device and circuit design and technology. These synergies are reflected in the collaboration between the teams led by Professors Nicola Spaldin (Materials Department, ETHZ) and Adrian Ionescu (Electrical Engineering Department, EPFL).
Adrian M. Ionescu is a Full Professor of Nanoelectronics at Ecole Polytechnique Fédérale de Lausanne (EPFL), Switzerland. He received the B.S. &M.S. in Electronics and Telecommunications in 1989 from the University ‘Politehnica' Bucharest, Romania. He holds two PhDs, in Microelectronics, from University ‘Politehnica' Bucharest (1994) and in Physics of semiconductor devices from the National Polytechnic Institute of Grenoble, France (1997).He held staff and/or visiting positions at Commissariat à l'énergie Atomique (CEA-LETI), Centre National de la Recherche Scientifique (CNRS), and Stanford University, USA. He was Invited Professor with Tokyo Institute of Technology, Japan, in 2012 and 2016.He is the founder and director of the Nanoelectronic Devices Laboratory (Nanolab: http://nanolab.epfl.ch/ ) of EPFL. Prof. Ionescu served as Director of the Doctoral Program in Microsystems and Microelectronics of EPFL and Director of the (former) Institute of Microsystems and Microelectronics of EPFL. His nanoelectronics research deals with beyond CMOS and More-Than Moore energy efficient devices and technologies. His group pioneered steep slope transistors, M/NEMS devices with main emphasis on low power concepts in order to achieve novel energy efficient digital, analog, radio frequency and low power sensing functions. He has been the leader of many European projects focusing on low power nanoelectronics and nanotechnology for smart systems.He was an Editor of IEEE Transactions on Electron Devices and is currently a Board Member of Proceedings of IEEE. He has served the Technical Committees of many IEEE conferences, and, he was the Technical Chair of IEEE SNW at IEEE VLSI Technology Symposium 2016 (USA), and the General Chair of the IEEE European Solid-State Devices and Circuits Research Conference (ESSDERC/ESSCIRC 2016). Prof. Ionescu has published more than 600 articles in international journals and conference proceedings. He is the recipient of IBM Faculty Award 2013 for contributions to the Engineering and the recipient of André Blondel Medal 2009 of the Society of Electrical and Electronics Engineering, Paris, France. He and his group received the IEEE George Smith Award that in 2017.Professor Ionescu has been the main coordinator of FET Flagship Pilot Guardian Angels for a Smarter Life, an advanced research program involving a Consortium of 66 partners (global industries in field of semiconductors, telecommunications, sensors, health care and automotive, large research institutes and universities), selected by the European Commission as one of the four leading finalists for future emerging technologies.He is an IEEE Fellow and in 2015 he was elected as a member of the Swiss Academy of Sciences (SATW). In the same year he received the Outstanding Achievement Award of SATW for the successful coordination and delivery of the first national Swiss Technology Outlook to the Swiss government, a document that summarizes the work of multi‐disciplinary team of experts and provides recommendations for technological priorities and investments in the digital economy.In 2016 he received an Advanced ERC (European Research Council) Grant for individual senior scientists in Europe to develop a program aiming at energy efficient computation and sensing for Internet-of-Things. Currently, he leads the FET Proactive DIGIPREDICT, an European Consortium developing Digital Twins for Personalized, Preventive and Participatory Healthcare, a paradigm change in 21st century sustainable healthcare

Awards

The Annual Award of The Technical Section of the Romanian Academy of Sciences

Contributions to SOI technology

1994

Blondel Medal

For contributions to the progress in engineering sciences in the domain of electronics

2009

IBM Faculty Award

Engineering

2013

IEEE EDL George Smith Award

IEEE

2017

IEEE Technical Field Award Cledo Brunetti

“for leadership and contributions to the field of energy-efficient steep slope devices and technologies.”

2024

2024 IEEE Cledo Brunetti Award

IEEE

2023

Selected publications

Nitrogen doping of vertically aligned carbon nanotubes for on-chip CMOS-compatible pseudocapacitive supercapacitors

H. W. LiJ. PiwekA. M. Ionescu

Carbon. 2026. DOI : 10.1016/j.carbon.2025.121018.

Pulsed Laser and Atomic Layer Deposition of CMOS-Compatible Vanadium Dioxide: Enabling Ultrathin Phase-Change Films

A. VariniC. MassereyV. ContiZ. Saadat SomaehsoflaE. Ansari  et al.

ACS Applied Electronic Materials. 2025. DOI : 10.1021/acsaelm.5c01132.

An Investigation of VO2 Nanowire Arrays for Integrated Sensing. From Non-Stochastic Nanowires to Stochastic Nanostructures

V. ContiA. IaconetaC. MassereyA. VariniR. Chiesa  et al.

2025. 2025 23rd International Conference on Solid-State Sensors, Actuators and Microsystems (Transducers), Orlando, FL, USA, 2025-06-29 - 2025-07-03. p. 494 - 497. DOI : 10.1109/transducers61432.2025.11110500.

CMOS-Compatible Biosensing Platform for Multiplexed Lactate and PH Monitoring in Low-Volume Biosamples

L. De SchrijverW. SijbersA. SaeidiQ. LinA. M. Ionescu

2025. 2025 23rd International Conference on Solid-State Sensors, Actuators and Microsystems (Transducers), Orlando, FL, USA, 2025-06-29 - 2025-07-03. p. 924 - 927. DOI : 10.1109/transducers61432.2025.11111474.

CMOS-Compatible Antiferroelectric-Dielectric Capacitors for Multifunctional Energy Storage and Tunable Electronics

H.-W. LiC. MassereyN. MartinolliI. StolichnovA. Ionescu

2025. 2025 23rd International Conference on Solid-State Sensors, Actuators and Microsystems (Transducers), Orlando, FL, USA, 2025-06-29 - 2025-07-03. p. 1197 - 1200. DOI : 10.1109/transducers61432.2025.11109140.

Bridging Blood and Skin: Biomarker Profiling in Dermal Interstitial Fluid (dISF) for Minimally Invasive Diagnostics

Y. SprungerJ. LongoA. SaeidiA. M. Ionescu

Biosensors. 2025. DOI : 10.3390/bios15050301.

Integration of Cobalt Ferromagnetic Control Gates for Electrical and Magnetic Manipulation of Semiconductor Quantum Dots (Adv. Funct. Mater. 14/2025)

F. BersanoM. AldeghiN. MartinolliV. BoureauT. Aboud  et al.

Advanced Functional Materials. 2025. DOI : 10.1002/adfm.202570080.

Nanomole Process: Enabling Localized Metallic Back-Gates for Enhanced Cryogenic Front-to-Back Coupling in FDSOI Quantum Dots

F. BersanoN. MartinolliI. BouquetL. ŽaperF. Braakman  et al.

IEEE Journal of the Electron Devices Society. 2025. DOI : 10.1109/JEDS.2025.3545661.

Vanadium-Doped Hafnium Oxide: A High-Endurance Ferroelectric Thin Film with Demonstrated Negative Capacitance

E. AnsariN. MartinolliE. HartmannA. VariniI. Stolichnov  et al.

NANO LETTERS. 2025. DOI : 10.1021/acs.nanolett.4c05671.

Integration of Cobalt Ferromagnetic Control Gates for Electrical and Magnetic Manipulation of Semiconductor Quantum Dots

F. BersanoM. AldeghiN. MartinolliV. BoureauT. Aboud  et al.

Advanced Functional Materials. 2025. DOI : 10.1002/adfm.202419940.

Future of Computing: towards Energy Efficient Cognitive Chips

A. M. Ionescu

2025. International VLSI Symposium on Technology, Systems and Applications (VLSI TSA 2025), Hsinchu, Taiwan, Province of China, 2025-04-21 - 2025-04-24. DOI : 10.1109/VLSITSA64674.2025.11047135.

Biomarkers in Interstitial Fluid: From Screening to Sensor Development

Y. C. Sprunger / M. A. Ionescu (Dir.)

Lausanne, EPFL, 2025. DOI : 10.5075/epfl-thesis-11266.

Electron Spin Qubit Architectures on Fully Depleted Silicon-On-Insulator Substrates for Scalable Quantum Computing

F. Bersano / M. A. Ionescu (Dir.)

Lausanne, EPFL, 2025. DOI : 10.5075/epfl-thesis-11089.

Wafer-Scale Demonstration of a Highly Sensitive Strain Sensor Based on Polycrystalline VO<inf>2</inf>

Z. Saadat SomaehsoflaC. MassereyA. VariniD. FlandreM. A. Ionescu

2025. 38th International Conference on Micro Electro Mechanical Systems, Kaohsiung, Taiwan, Province of China, 2025-01-19 - 2025-01-23. p. 635 - 638. DOI : 10.1109/MEMS61431.2025.10917570.

Cryogenic Front-to-Back Coupling in FD-SOI for Tunable Qubits by Localized Metallic Back-Gate

F. BersanoM. GhiniI. BouquetE. ColletteN. Martinolli  et al.

2024. 50th IEEE European Solid-State Electronics Research Conference, Bruges, Belgium, 2024-09-09 - 2024-09-12. p. 165 - 168. DOI : 10.1109/ESSERC62670.2024.10719596.

Graphene-enhanced ferroelectric domain wall high-output memristor

F. RischA. GilaniS. KamaeiA. M. IonescuI. Stolichnov

Applied Physics Letters. 2024. DOI : 10.1063/5.0232620.

AC-Driven Aptamer-Decorated Graphene FET for Cortisol Detection

A. GilaniA. SaeidiJ. LongoY. SprungerS. Kamaei  et al.

2024. IEEE Sensors, Kobe, Japan, 2024-10-20 - 2024-10-23. DOI : 10.1109/SENSORS60989.2024.10785129.

Aptamer-Decorated Graphene Channel Array with Liquid-Gating for Sensing Cortisol Stress Hormone

A. GilaniA. SaeidiS. SheibaniJ. LongoS. Kamaei  et al.

2024. IEEE BioSensors Conference, Cambridge, United Kingdom, 2024-07-28 - 2024-07-30. DOI : 10.1109/BioSensors61405.2024.10712663.

Controlled Electronic and Magnetic Landscape in Self-Assembled Complex Oxide Heterostructures

D.-S. ParkA. D. RataR. T. DahmK. ChuY. Gan  et al.

Advanced Materials. 2023. DOI : 10.1002/adma.202300200.

Millimeter-wave to near-terahertz sensors based on reversible insulator-to-metal transition in VO2

F. QaderiT. RoscaM. BurlaJ. LeutholdD. Flandre  et al.

Communications Materials. 2023. DOI : 10.1038/s43246-023-00350-x.

Ferroelectric Junctionless Double-Gate Silicon-On-Insulator FET as a Tripartite Synapse

C. GastaldiS. KamaeiM. CavalieriA. SaeidiI. Stolichnov  et al.

IEEE Electron Device Letters. 2023. DOI : 10.1109/LED.2023.3249972.

Nanoscale local modification of PMMA refractive index by tip-enhanced femtosecond pulsed laser irradiation

D. E. TrancaS. G. StanciuR. HristuA. M. IonescuG. A. Stanciu

Applied Surface Science. 2023. DOI : 10.1016/j.apsusc.2023.157014.

Monitoring of Protein and pH Levels in Human Biofluids using FD-SOI Silicon Nanowire Arrays

L. Capua / M. A. IonescuD. Locca (Dir.)

Lausanne, EPFL, 2023. DOI : 10.5075/epfl-thesis-9998.

Ultra-High Sensitivity Silicon Nanowire Array Biosensor Based on a Constant-Current Method for Continuous Real-Time pH and Protein Monitoring in Interstitial Fluid

Y. C. SprungerL. CapuaT. ErnstS. BarraudA. M. Ionescu  et al.

2023. IEEE 49th European Solid-State Circuits Conference (ESSCIRC), Lisbon, PORTUGAL, SEP 11-14, 2023. p. 153 - 156. DOI : 10.1109/ESSCIRC59616.2023.10268731.

Static and Dynamic Stochastic Analysis of a Temperature-Sensitive VO<sub>2</sub> Spiking Neuron

N. BidoulT. RoscaA. M. IonescuD. Flandre

2023. IEEE 53rd European Solid-State Device Research Conference (ESSDERC), Lisbon, PORTUGAL, SEP 11-14, 2023. p. 81 - 84. DOI : 10.1109/ESSDERC59256.2023.10268509.

Model-Based ISO 14971 Risk Management of EEG-Based Medical Devices

N. YakymetsR. ZanettiM. A. IonescuD. Atienza Alonso

2023. 45th Annual International Conference of the IEEE Engineering in Medicine and Biology Society (EMBC), Sydney Australia, July 24-27, 2023. DOI : 10.1109/EMBC40787.2023.10340131.

Energy-Efficient Electronic Functions Based on the Co-integration of 2D and Ferroelectric Materials

S. Kamaei Bahmaei / M. A. Ionescu (Dir.)

Lausanne, EPFL, 2023. DOI : 10.5075/epfl-thesis-10096.

Metamodel for Safety Risk Management of Medical Devices Based on ISO 14971

N. YakymetsM. A. IonescuD. Atienza Alonso

2023. The ACM/IEEE 26th International Conference on Model-Driven Engineering Languages and Systems, Västerås, Sweden, October 1-6, 2023.

Giant switchable non thermally-activated conduction in 180 degrees domain walls in tetragonal Pb(Zr,Ti)O-3

F. RischY. TikhonovI. LukyanchukA. M. IonescuI. Stolichnov

Nature Communications. 2022. DOI : 10.1038/s41467-022-34777-6.

Defect-induced magnetism in homoepitaxial SrTiO3

A. D. RataJ. Herrero-MartinI. MaznichenkoF. M. ChiabreraR. T. Dahm  et al.

Apl Materials. 2022. DOI : 10.1063/5.0101411.

Highly Sensitive Detection of the Antidepressant Fluoxetine With an Extended Gate Field Effect Transistor

S. SheibaniA. M. IonescuP. Norouzi

Ieee Sensors Journal. 2022. DOI : 10.1109/JSEN.2022.3161116.

Negative Capacitance in HfO2 Gate Stack Structures With and Without Metal Interlayer

C. GastaldiM. CavalieriA. SaeidiE. O'ConnorF. Bellando  et al.

Ieee Transactions On Electron Devices. 2022. DOI : 10.1109/TED.2022.3157579.

Label-Free C-Reactive Protein Si Nanowire FET Sensor Arrays With Super-Nernstian Back-Gate Operation

L. CapuaY. SprungerH. ElettroF. RischA. Grammoustianou  et al.

Ieee Transactions On Electron Devices. 2022. DOI : 10.1109/TED.2022.3144108.

Spike-Based Sensing and Communication for Highly Energy-Efficient Sensor Edge Nodes

F. RothN. BidoulT. RoscaM. DoerpinghausD. Flandre  et al.

2022. 2nd IEEE International Symposium on Joint Communications and Sensing (JC and S), Seefeld, AUSTRIA, Mar 09-10, 2022. DOI : 10.1109/JCS54387.2022.9743501.

Subthreshold VO2 vertical switches for large-bandwidth millimeter-wave and sub-terahertz detection

F. QaderiY. HorstT. BlatterM. BurlaD. Park  et al.

2022. 47th International Conference on Infrared, Millimeter and Terahertz Waves (IRMMW-THz), Delft, NETHERLANDS, Aug 28-Sep 02, 2022. DOI : 10.1109/IRMMW.THz50927.2022.9895513.

Multi-Gate FD-SOI Single Electron Transistor for hybrid SET-MOSFET quantum computing

F. BersanoF. De PalmaF. OppligerF. BraakmanI. Radu  et al.

2022. 48th IEEE European Solid State Circuits Conference (ESSCIRC), Milan, ITALY, 2022-09-19 - 2022-09-22. p. 49 - 52. DOI : 10.1109/ESSCIRC55480.2022.9911479.

Gate energy efficiency and negative capacitance in ferroelectric 2D/2D TFET from cryogenic to high temperatures

S. KamaeiA. SaeidiC. GastaldiT. RoscaL. Capua  et al.

Npj 2D Materials And Applications. 2021. DOI : 10.1038/s41699-021-00257-6.

Intrinsic switching in Si-doped HfO2: A study of Curie-Weiss law and its implications for negative capacitance field-effect transistor

C. GastaldiM. CavalieriA. SaeidiE. O'ConnorS. Kamaei  et al.

Applied Physics Letters. 2021. DOI : 10.1063/5.0052129.

A Wearable Low-Power Sensing Platform for Environmental and Health Monitoring: The Convergence Project

E. SaoutieffT. PolichettiL. JouanetA. FauconA. Vidal  et al.

Sensors. 2021. DOI : 10.3390/s21051802.

Sensitivity, Noise and Resolution in a B -Modified Foundry-Made ISFET with Miniaturized Reference Electrode for Wearable Point-of-Care Applications

F. BellandoL. J. MeleP. PalestriJ. ZhangM. A. Ionescu  et al.

Sensors. 2021. DOI : 10.3390/s21051779.

A hybrid III-V tunnel FET and MOSFET technology platform integrated on silicon

C. ConvertinoC. B. ZotaH. SchmidD. CaimiL. Czornomaz  et al.

Nature Electronics. 2021. DOI : 10.1038/s41928-020-00531-3.

Extended gate field-effect-transistor for sensing cortisol stress hormone

S. SheibaniL. CapuaS. KamaeiS. S. A. AkbariJ. Zhang  et al.

Communications Materials. 2021. DOI : 10.1038/s43246-020-00114-x.

High Tuning Range Spiking 1R-1T VO2 Voltage-Controlled Oscillator for Integrated RF and Optical Sensing

T. RoscaF. QaderiA. M. Ionescu

2021. IEEE 51st European Solid-State Device Research Conference (ESSDERC), ELECTR NETWORK, Sep 06-09, 2021. p. 183 - 186. DOI : 10.1109/ESSDERC53440.2021.9631804.

Networks of Coupled VO2 Oscillators for Neuromorphic Computing

E. Corti / M. A. IonescuS. Karg (Dir.)

Lausanne, EPFL, 2021. DOI : 10.5075/epfl-thesis-9303.

Coupled VO2 oscillators circuit as analog first layer filter in convolutional neural networks

E. CortiJ. A. Cornejo JimenezK. NiangJ. RobertsonK. E. Moselund  et al.

Frontiers In Neuroscience. 2021. DOI : 10.3389/fnins.2021.628254.

High Tuning Range Spiking 1R-1T VO2 Voltage-Controlled Oscillator for Integrated RF and Optical Sensing

T. RoscaF. QaderiA. M. Ionescu

2021. 47th IEEE European Solid State Circuits Conference (ESSCIRC), ELECTR NETWORK, Sep 06-09, 2021. p. 183 - 186. DOI : 10.1109/ESSCIRC53450.2021.9567761.

An Experimental Study Of The Photoresponse Of 1T-1R Oscillators Based On Vanadium Dioxide: Towards Spiking Sensing Systems

T. RoscaF. QaderiM. RiccardiO. J. F. MartinA. M. Ionescu

2021. 21st International Conference on Solid-State Sensors, Actuators and Microsystems (Transducers), ELECTR NETWORK, Jun 20-25, 2021. p. 373 - 376. DOI : 10.1109/TRANSDUCERS50396.2021.9495742.

Double-Gate Si Nanowire FET Sensor Arrays For Label-Free C-Reactive Protein detection enabled by antibodies fragments and pseudo-super-Nernstian back-gate operation

L. CapuaSprunger YannH. S. ElettroGrammoustianou AristeaMidahuen Rony  et al.

2021. 67th Annual IEEE International Electron Devices Meeting (IEDM 2021), San Francisco, CA, USA, December 11-15, 2021. DOI : 10.1109/IEDM19574.2021.9720670.

Radio Frequency Temperature Transducers Based On Insulator-Metal Phase Transition In Vo2 And Ge-Doped Vo2 Ald Thin Films

A. A. MullerR. KhadarK. M. NiangG. BaiE. Matioli  et al.

2021. 21st International Conference on Solid-State Sensors, Actuators and Microsystems (Transducers), ELECTR NETWORK, Jun 20-25, 2021. p. 1355 - 1358. DOI : 10.1109/TRANSDUCERS50396.2021.9495498.

Antibodies fragments as enablers of cardiac troponin (cTn) detection with extended gate metal-oxide-semiconductor field effect transistors (EGFET)

L. CapuaD. LoccaA. Ionescu

2020. p. 1699 - 1699.

Intrinsic or nucleation-driven switching: An insight from nanoscopic analysis of negative capacitance Hf1-xZrxO2-based structures

I. StolichnovM. CavalieriC. GastaldiM. HoffmannU. Schroeder  et al.

Applied Physics Letters. 2020. DOI : 10.1063/5.0021272.

Temperature dependence of reconfigurable bandstop filters using vanadium dioxide switches

A. MullerM. CavalieriM. A. Ionescu

Applied Physics Letters. 2020. DOI : 10.1063/5.0021942.

The 3D Smith Chart: From Theory to Experimental Reality

A. MullerV. AsaveiMoldveanu AlinE. SanabriaR. Khadar  et al.

IEEE Microwave Magazine. 2020. DOI : 10.1109/MMM.2020.3014984.

3D Smith chart constant quality factor semi-circles contours for positive and negative resistance circuits

V. AsaveiA. MullerE. Sanabria CodesalA. MoldoveanuM. A. Ionescu

IEEE Access. 2020. DOI : 10.1109/ACCESS.2020.3026917.

Corrections to “Experimental Details of a Steep-Slope Ferroelectric InGaAs Tunnel-FET With High-Quality PZT and Modeling Insights in the Transient Polarization”

A. S. VerhulstA. SaeidiI. StolichnovA. AlianH. Iwai  et al.

Ieee Transactions On Electron Devices. 2020. DOI : 10.1109/TED.2020.2995786.

Experimental Investigation of Pulsed Laser Deposition of Ferroelectric Gd:HfO2 in a CMOS BEOL Compatible Process

M. CavalieriE. O'ConnorC. GastaldiI. StolichnovA. M. Ionescu

Acs Applied Electronic Materials. 2020. DOI : 10.1021/acsaelm.0c00319.

Nanowire Tunnel FET with Simultaneously Reduced Subthermionic Subthreshold Swing and Off-Current due to Negative Capacitance and Voltage Pinning Effects

A. SaeidiT. RoscaE. MemisevicI. StolichnovM. Cavalieri  et al.

Nano Letters. 2020. DOI : 10.1021/acs.nanolett.9b05356.

WSe2/SnSe2 vdW heterojunction Tunnel FET with subthermionic characteristic and MOSFET co-integrated on same WSe2 flake

N. OlivaJ. BackmanL. CapuaM. CavalieriM. Luisier  et al.

Npj 2D Materials And Applications. 2020. DOI : 10.1038/s41699-020-0142-2.

Subthermionic negative capacitance ion sensitive field-effect transistor

F. BellandoC. K. DabhiA. SaeidiC. GastaldiY. S. Chauhan  et al.

Applied Physics Letters. 2020. DOI : 10.1063/5.0005411.

Radio-Frequency Characteristics of Ge-doped Vanadium Dioxide Thin Films with Increased Transition Temperature

A. MullerR. A. KhadarT. AbelN. NegmT. Rosca  et al.

ACS Applied Electronic Materials. 2020. DOI : 10.1021/acsaelm.0c00078.

An Experimental Study on Mixed-Dimensional 1D-2D van der Waals Single-Walled Carbon Nanotube-WSe2 Hetero-Junction

S. KamaeiA. SaeidiF. JazaeriA. RassekhN. Oliva  et al.

IEEE Electron Device Letters. 2020. DOI : 10.1109/LED.2020.2974400.

Negative Capacitance Double-Gate Junctionless FETs: A Charge-Based Modeling Investigation of Swing, Overdrive and Short Channel Effect

A. RassekhJ.-M. SalleseF. JazaeriM. FathipourA. M. Ionescu

Ieee Journal Of The Electron Devices Society. 2020. DOI : 10.1109/JEDS.2020.3020976.

Monolithically Integrated Catalyst-Free High Aspect Ratio InAs-on-Insulator (InAsOI) FinFETs for pH Sensing

M. RupakulaJ. ZhangF. BellandoF. WildhaberC. Convertino  et al.

Ieee Journal Of The Electron Devices Society. 2020. DOI : 10.1109/JEDS.2020.3008094.

At the end of scaling: 2D materials for computing and sensing applications

N. Oliva / M. A. Ionescu (Dir.)

Lausanne, EPFL, 2020. DOI : 10.5075/epfl-thesis-7695.

High-Performance III-V MOSFETs and Tunnel-FETs Integrated on Silicon

C. Convertino / M. A. IonescuK. E. Moselund (Dir.)

Lausanne, EPFL, 2020. DOI : 10.5075/epfl-thesis-8346.

InAs-on-Insulator Fin Nanostructures for Integrated Computation and Sensing Functions

M. Rupakula / M. A. Ionescu (Dir.)

Lausanne, EPFL, 2020. DOI : 10.5075/epfl-thesis-7303.

Extended Gate Field Effect Transistor Based Sensor for Detection of Trace Amounts of Anti-Depressant Drug

S. SheibaniA. M. IonescuP. Norouzi

Ieee Access. 2020. DOI : 10.1109/ACCESS.2020.3034691.

Negative capacitance semiconductor sensor

M. A. IonescuF. BellandoA. Saeidi

EP3671199 ; US11289601 ; EP3671199 ; US2020194592 . 2020.

Extended-Gate FET cortisol sensor for stress disorders based on aptamers-decorated graphene electrode: Fabrication, Experiments and Unified Analog Predictive Modeling

L. CapuaS. SheibaniS. KamaeiJ. ZhangA. M. Ionescu

2020. IEEE International Electron Devices Meeting (IEDM), ELECTR NETWORK, Dec 12-18, 2020. DOI : 10.1109/IEDM13553.2020.9372063.

Sweat monitoring with CMOS compatible technology: ISFETS and beyond

F. Bellando / M. A. Ionescu (Dir.)

Lausanne, EPFL, 2020. DOI : 10.5075/epfl-thesis-7464.

Experimental Details of a Steep-Slope Ferroelectric InGaAs Tunnel-FET With High-Quality PZT and Modeling Insights in the Transient Polarization

A. VerhulstA. SaeidiI. StolichnovA. AlianH. Iwai  et al.

IEEE Transactions on Electron Devices. 2019. DOI : 10.1109/TED.2019.2954585.

3D Smith charts scattering parameters frequency-dependent orientation analysis and complex-scalar multi-parameter characterization applied to Peano reconfigurable vanadium dioxide inductors

A. MullerA. MoldoveanuV. AsaveiR. A. KhadarE. Sanabria-Codesal  et al.

Scientific Reports. 2019. DOI : 10.1038/s41598-019-54600-5.

Detection of ultra-low protein concentrations with the simplest possible field effect transistor

Y. M. GeorgievN. PetkovR. YuA. M. NightingaleE. Buitrago  et al.

Nanotechnology. 2019. DOI : 10.1088/1361-6528/ab192c.

Hysteresis Dynamics in Double-Gated n-Type WSe2 FETs With High-k Top Gate Dielectric

N. OlivaY. Y. IlarionovE. A. CasuM. CavalieriT. Knobloch  et al.

IEEE Journal of the Electron Devices Society. 2019. DOI : 10.1109/JEDS.2019.2933745.

Sweat Biomarker Sensor Incorporating Picowatt, Three-Dimensional Extended Metal Gate Ion Sensitive Field Effect Transistors

J. ZhangM. RupakulaF. BellandoE. A. Garcia CorderoF. Wildhaber  et al.

ACS Sensors. 2019. DOI : 10.1021/acssensors.9b00597.

Negative Capacitance as Universal Digital and Analog Performance Booster for Complementary MOS Transistors

A. SaeidiF. JazaeriI. StolichnovC. C. EnzA. M. Ionescu

Scientific Reports. 2019. DOI : 10.1038/s41598-019-45628-8.

A Novel Reconfigurable CMOS Compatible Ka Band Bandstop Structure Using Split-Ring Resonators and Vanadium Dioxide (VO2) Phase Change Switches

A. MullerR. Abdul KhadarE. A. CasuA. KrammerM. Cavaleri  et al.

2019. 2019 IEEE MTT-S International Microwave Symposium (IMS), Boston, June 7-11,2019. p. 865 - 867. DOI : 10.1109/MWSYM.2019.8701121.

NanoElectronics roadmap for Europe: From nanodevices and innovative materials to system integration

J. AhopeltoG. ArdilaL. BaldiF. BalestraD. Belot  et al.

Solid-State Electronics. 2019. DOI : 10.1016/j.sse.2019.03.014.

Resistive Coupled VO2 Oscillators for Image Recognition

E. CortiK. E. MoselundB. GotsmannI. StolichnovM. A. Ionescu  et al.

2019. 2018 IEEE International Conference on Rebooting Computing (ICRC), McLean, VA, USA, 7-9 Nov. 2018. p. 195 - 201. DOI : 10.1109/ICRC.2018.8638626.

Near Hysteresis-Free Negative Capacitance InGaAs Tunnel FETs with Enhanced Digital and Analog Figures of Merit below VDD=400mV

A. SaeidiA. S. VerhulstI. StolichnovA. AlianH. Iwai  et al.

2019. IEEE International Electron Devices Meeting (IEDM). DOI : 10.1109/IEDM.2018.8614583.

Co-integrated Subthermionic 2D/2D WSe2/SnSe2 Vertical Tunnel FET and WSe2 MOSFET on same flake: towards a 2D/2D vdW Dual-Transport Steep Slope FET

N. OlivaL. CapuaM. CavalieriA. M. Ionescu

2019. 65th IEEE Annual International Electron Devices Meeting (IEDM), San Francisco, CA, Dec 09-11, 2019. DOI : 10.1109/IEDM19573.2019.8993643.

Sub-Thermionic Scalable III-V Tunnel Field-Effect Transistors Integrated on Si (100)

C. ConvertinoC. B. ZotaY. BaumgartnerP. StaudingerM. Sousa  et al.

2019. 65th IEEE Annual International Electron Devices Meeting (IEDM), San Francisco, CA, Dec 09-11, 2019. DOI : 10.1109/IEDM19573.2019.8993610.

Transient Negative Capacitance of Silicon-doped HfO2 in MFMIS and MFIS structures: experimental insights for hysteresis-free steep slope NC FETs

C. GastaldiA. SaeidiM. CavalieriI. StolichnovP. Muralt  et al.

2019. 65th IEEE Annual International Electron Devices Meeting (IEDM), San Francisco, CA, Dec 09-11, 2019. DOI : 10.1109/IEDM19573.2019.8993523.

Capillary flow device for bio-fluid collection with semiconductor sensors

M. A. IonescuH. GuerinE. Garcia CorderoF. Bellando

EP3510403 ; EP3510403 ; US11389096 ; US2019246959 ; EP3510403 ; US2018070869 ; WO2018047125 . 2019.

Monolithically integrated catalyst-free High Aspect Ratio InAs-On-Insulator (InAsOI) FinFETs for pH sensing

M. RupakulaJ. ZhangF. BellandoF. WildhaberC. Convertino  et al.

2019. 49th European Solid-State Device Research Conference (ESSDERC), Cracow, POLAND, Sep 23-26, 2019. p. 106 - 109. DOI : 10.1109/ESSDERC.2019.8901739.

Wearable System for Real-Time Sensing of Biomarkers in Human Sweat

J. Zhang / M. A. IonescuM. Mazza (Dir.)

Lausanne, EPFL, 2019. DOI : 10.5075/epfl-thesis-9696.

Exploration of Negative Capacitance Devices and Technologies

A. Saeidi / M. A. Ionescu (Dir.)

Lausanne, EPFL, 2019. DOI : 10.5075/epfl-thesis-9340.

Apparatus for non-invasive sensing of biomarkers in human sweat

M. A. IonescuJ. F. LongoF. P. WildhaberH. M. GuérinF. Bellando  et al.

US11331009 ; EP3697317 ; WO2019076733 ; WO2019076733 ; US2019110722 . 2019.

Millimeter-wave-triggering of insulator-to-metal transition in Vanadium dioxide

F. QaderiA. MullerA. KrammerM. VeljoviciZ. Ollmann  et al.

2019. 44th International Conference on Infrared, Millimeter, and Terahertz Waves (IRMMW-THz), Paris, FRANCE, Sep 01-06, 2019. DOI : 10.1109/IRMMW-THz.2019.8874271.

VO2 oscillators coupling for Neuromorphic Computation

E. CortiB. GotsmannK. MoselundI. StolichnovA. Ionescu  et al.

2019. Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon (EUROSOI-ULIS), Grenoble, FRANCE, Apr 01-03, 2019. DOI : 10.1109/EUROSOI-ULIS45800.2019.9041875.

Sensing device for sensing minor charge variations

C. AlperM. A. IonescuT. Rosca

US10818785 ; US2019172937 . 2019.

Double-gate field-effect-transistor based biosensor

H. GuerinM. Ionescu

US11467123 ; US2020284753 ; EP3679363 ; WO2019048059 . 2019.

Field-effect transistor device or sensor for sensing ions, molecules or biomarkers in a fluid

J. ZhangF. BellandoE. Garcia CorderoM. A. Ionescu

US2021270770 ; EP3811071 ; CN112567238 ; WO2019244113 . 2019.

Three-Dimensional Integrated Ultra-Low-Volume Passive Microfluidics with Ion-Sensitive Field-Effect Transistors for Multiparameter Wearable Sweat Analyzers

E. Garcia-CorderoF. BellandoJ. ZhangF. WildhaberJ. Longo  et al.

ACS Nano. 2018. DOI : 10.1021/acsnano.8b07413.

Double gate n-type WSe2 FETs with high-k top gate dielectric and enhanced electrostatic control

N. OlivaE. A. CasuM. CavalieriM. A. Ionescu

2018. 48th European Solid-State Device Research Conference - ESSDERC 2018, 3-6 Sept. 2018, Dresden, Germany. p. 114 - 117. DOI : 10.1109/ESSDERC.2018.8486867.

Gate Leakage Tunneling Impact on the InAs/GaSb Heterojunction Electron-Hole Bilayer Tunneling Field-Effect Transistor

J. L. PadillaC. Medina-BailonC. MarquezC. SampedroL. Donetti  et al.

IEEE Transactions on Electron Devices. 2018. DOI : 10.1109/TED.2018.2866123.

A Review and Mathematical Treatment of Infinity on the Smith Chart, 3D Smith Chart and Hyperbolic Smith Chart

M. Jose Perez-PenalverE. Sanabria-CodesalF. MoldoveanuA. MoldoveanuV. Asavei  et al.

Symmetry-basel. 2018. DOI : 10.3390/sym10100458.

Genuinely Ferroelectric Sub-1-Volt-Switchable Nanodomains in HfxZr(1-x)O2 Ultrathin Capacitors

I. StolichnovM. CavalieriE. CollaT. SchenkT. Mittmann  et al.

ACS Applied Materials & Interfaces. 2018. DOI : 10.1021/acsami.8b07988.

A Reconfigurable Inductor Based on Vanadium Dioxide Insulator-to-Metal Transition

E. A. CasuA. MullerM. CavalieriA. FumarolaA. M. Ionescu  et al.

Ieee Microwave And Wireless Components Letters. 2018. DOI : 10.1109/LMWC.2018.2854961.

Steep Slope Transistors for Quantum Computing

M. A. IonescuT. RoscaC. Alper

2018. IEEE 2nd Electron Devices Technology and Manufacturing Conference - EDTM 2018, Kobe, Japan, 13-16 March 2018. p. 56 - 58. DOI : 10.1109/EDTM.2018.8421422.

Low power analog frontend for ISFET sensor readout

J. ZhangF. BellandoE. A. Garcia CorderoM. Fernandez-Bolanos BadiaM. A. Ionescu  et al.

2018. 17th International Meeting on Chemical Sensors - IMCS 2018, Vienna, Austria, 2018-07-15 - 2018-07-19. DOI : 10.5162/IMCS2018/FE.1.

Design Considerations of Ferroelectric Properties for Negative Capacitance MOSFETs

A. SaeidiF. JazaeriI. StlichnovC. EnzM. A. Ionescu

2018. p. 10 - 12. DOI : 10.1109/EDTM.2018.8421443.

Effect of hysteretic and non-hysteretic negative capacitance on tunnel FETs DC performance

A. SaeidiF. JazaeriI. StolichnovG. V. LuongQ.-T. Zhao  et al.

Nanotechnology. 2018. DOI : 10.1088/1361-6528/aaa590.

MoS2/VO2 vdW heterojunction devices: Tunable rectifiers, photodiodes and field effect transistors

N. OlivaE. A. CasuC. YanA. KrammerA. Magrez  et al.

2018. IEDM, San Francisco, California, USA, December 2-6, 2017. p. 36.1.1 - 36.1.4. DOI : 10.1109/IEDM.2017.8268503.

Capillary flow device for bio-fluid collection with semiconductor sensors

M. A. IonescuH. GuerinE. Garcia CorderoF. Bellando

EP3510403 ; EP3510403 ; US11389096 ; US2019246959 ; EP3510403 ; US2018070869 ; WO2018047125 . 2018.

Tunnel fet based non-volatile memory boosted by vertical band-to-band tunneling

A. BiswasS. TomarA. M. Ionescu

US2018012659 . 2018.

CMOS 3D-Extended Metal Gate ISFETs with Near Nernstian Ion Sensitivity

J.-R. ZhangF. BellandoM. RupakulaE. G. CorderoN. Ebejer  et al.

2018. 76th Device Research Conference (DRC), Santa Barbara, CA, Jun 24-27, 2018. DOI : 10.1109/DRC.2018.8442197.

Novel Digital and Radio Frequency Electronic Functions Enabled by Steep-Slope Phase-Change Devices

E. A. Casu / M. A. IonescuM. Fernandez-Bolanos Badia (Dir.)

Lausanne, EPFL, 2018. DOI : 10.5075/epfl-thesis-8596.

The Future of Electronics: Silicon to Cloud Technologies

A. M. Ionescu

2018. 20th International Conference on Transparent Optical Networks (ICTON), Bucharest, ROMANIA, Jul 01-05, 2018. DOI : 10.1109/ICTON.2018.8473849.

Computing with Ferroelectric FETs: Devices, Models, Systems, and Applications

A. AzizE. BreyerA. ChenX. ChenS. Datta  et al.

2018. Proceedings Of The 2018 Design, Automation & Test In Europe Conference & Exhibition (Date), Dresden, GERMANY, Mar 19-23, 2018. p. 1289 - 1298. DOI : 10.23919/DATE.2018.8342213.

An Experimental Study of Heterostructure Tunnel FET Nanowire Arrays: Digital and Analog Figures of Merit from 300K to 10K

T. RoscaA. SaeidiE. Memisevic-E. WernerssonA. M. Ionescu

2018. 64th IEEE Annual International Electron Devices Meeting (IEDM), San Francisco, CA, Dec 01-05, 2018. p. 13.5.1 - 13.5.4. DOI : 10.1109/IEDM.2018.8614665.

Prospects for energy-efficient edge computing with integrated HfO2-based ferroelectric devices

I. O'ConnorM. CantanC. MarchandB. VilquinS. Slesazeck  et al.

2018. 26th IFIP/IEEE International Conference on Very Large Scale Integration (VLSI-SoC), Verona, ITALY, Oct 08-10, 2018. p. 180 - 183. DOI : 10.1109/VLSI-SoC.2018.8644809.

Near Hysteresis-Free Negative Capacitance InGaAs Tunnel FETs with Enhanced Digital and Analog Figures of Merit below V-DD=400mV

A. SaeidiA. S. VerhulstI. StolichnovA. AlianH. Iwai  et al.

2018. 64th IEEE Annual International Electron Devices Meeting (IEDM), San Francisco, CA, Dec 01-05, 2018. p. 13.4.1 - 13.4.4. DOI : 10.1109/IEDM.2018.8614583.

Embedded Passive Nano-Liter Micropump For Sweat Collection And Analysis

E. A. Garcia CorderoF. WildhaberF. BellandoJ. F. LongoM. Fernandez-Bolanos Badia  et al.

2018. 31st IEEE International Conference on Micro Electro Mechanical Systems (MEMS), Belfast, NORTH IRELAND, Jan 21-25, 2018. p. 1217 - 1220. DOI : 10.1109/MEMSYS.2018.8346782.

All CMOS Integrated 3D-Extended Metal Gate ISFETs for pH and Multi-Ion (Na+, K+, Ca2+) sensing

J. -R. ZhangM. RupakulaF. BellandoE. G. CorderoJ. Longo  et al.

2018. 64th IEEE Annual International Electron Devices Meeting (IEDM), San Francisco, CA, Dec 01-05, 2018. p. 12.1.1 - 12.1.4. DOI : 10.1109/IEDM.2018.8614668.

Negative capacitance tunnel F£Ts: Experimental demonstration of outstanding simultaneous boosting of on-current, transconductance, overdrive, and swing

A. SaeidiF. JazaeriI. StolichnovG. LuongQ. Zhao  et al.

2018. 2017 Silicon Nanoelectronics Workshop, Kyoto, Japan, June 4-5, 2017. DOI : 10.23919/SNW.2017.8242270.

Wearable System with Integrated Passive Microfluidics for Real-Time Electrolyte Sensing in Human Sweat

E. A. Garcia Cordero / M. A. Ionescu (Dir.)

Lausanne, EPFL, 2018. DOI : 10.5075/epfl-thesis-8849.

Polarity Control of Top Gated Black Phosphorous FETs by Workfunction Engineering of Pre-Patterned Au and Ag Embedded Electrodes

N. OlivaE. A. CasuW. A. VitaleI. StolichnovA. M. Ionescu

Ieee Journal Of The Electron Devices Society. 2018. DOI : 10.1109/JEDS.2018.2817289.

Lab on skin™: 3D monolithically integrated zero-energy micro/nanofludics and FD SOI ion sensitive FETs for wearable multi-sensing sweat applications

F. BellandoE. Garcia-CorderoF. WildhaberJ. LongoH. Guerin  et al.

2017. 2017 IEEE International Electron Devices Meeting - IEDM 2017, San Francisco, CA, US, December 2-6, 2017. p. 18.1.1 - 18.1.4. DOI : 10.1109/IEDM.2017.8268413.

Negative Capacitance Tunnel FETs: Experimental Demonstration of Outstanding Simultaneous Boosting of On-current, Transconductance, Overdrive, and Swing

A. SaeidiF. JazaeriI. StolichnovG. V. LuongQ.-T. Zhao  et al.

Silicon Nanoelectronic Workshop, Kyoto, Japan, June 4-5, 2017.

Negative Capacitance as Performance Booster for Tunnel FETs and MOSFETs: An Experimental Study

A. SaeidiF. JazaeriF. BellandoI. StolichnovG. V. Luong  et al.

IEEE Electron Device Letters. 2017. DOI : 10.1109/LED.2017.2734943.

Shunt capacitive switches based on VO2 metal insulator transition for RF phase shifter applications

E. A. CasuW. A. VitaleM. TamagnoneM. M. LopezN. Oliva  et al.

2017. ESSDERC 2017 - 47th IEEE European Solid-State Device Research Conference (ESSDERC), Leuven, Belgium, 11-14 September 2017. p. 232 - 235. DOI : 10.1109/ESSDERC.2017.8066634.

Benchmarking of Homojunction Strained-Si NW Tunnel FETs for Basic Analog Functions

A. BiswasG. V. LuongM. F. ChowdhuryC. AlperQ.-T. Zhao  et al.

IEEE Transactions on Electron Devices. 2017. DOI : 10.1109/TED.2017.2665527.

Complementary black phosphorous FETs by workfunction engineering of pre-patterned Au and Ag embedded electrodes

N. OlivaE. A. CasuW. A. VitaleI. StolichnovM. A. Ionescu

2017. Solid-State Device Research Conference (ESSDERC), 2017 47th European, September, 11-14, 2017. DOI : 10.1109/ESSDERC.2017.8066602.

Van der Waals MoS2/VO2 heterostructure junction with tunable rectifier behavior and efficient photoresponse

N. OlivaE. A. CasuC. YanA. KrammerT. Rosca  et al.

Scientific Reports. 2017. DOI : 10.1038/s41598-017-12950-y.

Energy efficient computing and sensing in the Zettabyte era: From silicon to the cloud

M. A. Ionescu

2017. 2017 IEEE International Electron Devices Meeting (IEDM), San Francisco, CA, USA, 2-6 Dec, 2017. p. 1.2.1 - 1.2.8. DOI : 10.1109/IEDM.2017.8268307.

Micromechanical resonators with sub-micron gaps filled with high-k dielectrics

M. d. l. C. Maqueda López / M. A. IonescuM. Fernandez-Bolanos Badia (Dir.)

Lausanne, EPFL, 2017. DOI : 10.5075/epfl-thesis-7938.

Lowering motional resistance by partially HfO2 gap filling in double-ended tuning fork MEMS resonators.

M. M. LopezE. A. CasuA. M. IonescuM. Fernandez-Bolanos

2017. 2017 Joint Conference of the European Frequency and Time Forum and IEEE International Frequency Control Symposium ((EFTF/IFC), BESANÇON, France, 9-13 July 2017. p. 805 - 806. DOI : 10.1109/FCS.2017.8089040.

Modeling and optimization of Tunnel-FET architectures exploiting carrier gas dimensionality

C. Alper / M. A. IonescuP. Palestri (Dir.)

Lausanne, EPFL, 2017. DOI : 10.5075/epfl-thesis-7587.

A Steep-Slope Transistor Combining Phase-Change and Band-to-Band-Tunneling to Achieve a sub-Unity Body Factor

W. A. VitaleE. A. CasuA. BiswasT. RoscaC. Alper  et al.

Scientific Reports. 2017. DOI : 10.1038/s41598-017-00359-6.

Low Impedance ALD HfO2 Partially-Filled-Gap Flexural and Bulk MEMS Resonators Piezoresistively Detected for Distributed Mass Sensing

M. M. LopezE. A. CasuM. Fernandez-BolanosA. M. Ionescu

2017. DOI : 10.3390/proceedings1040391.

Negative Capacitance Field Effect Transistors; Capacitance Matching and non-Hysteretic Operation

A. SaeidiF. JazaeriF. BellandoI. StolichnovC. Enz  et al.

2017. Solid-State Device Research Conference (ESSDERC), 2017 47th European, Leuven, Belgium, 11-14 Sept. 2017. DOI : 10.1109/ESSDERC.2017.8066596.

Negative Capacitance Tunnel FETs: Experimental Demonstration of Outstanding Simultaneous Boosting of On-current, Transconductance, Overdrive, and Swing

A. SaeidiF. JazaeriI. StolichnovG. V. LuongQ.-T. Zhao  et al.

2017. Silicon Nanoelectronic Workshop, Kyoto, Japan, June 4-5, 2017. p. 7 - 8. DOI : 10.23919/SNW.2017.8242270.

Low-energy biomarker detection through charge-based impedance measurements

J. ZhangM. A. IonescuM. Mazza

2016. 2016 IEEE SENSORS, Orlando, FL, USA, October 30th - November 3rd, 2016. DOI : 10.1109/ICSENS.2016.7808744.

Sub-20nm gaps in HSQ for ultra-scaled nanoelectronic devices

M. RupakulaW. A. Vitale

42nd Micro Nano Engineering, Vienna, Austria, Septemeber 19-23,2016.

Enabling High Frequency Reconfigurable Functions with Graphene

C. F. Moldovan / M. A. Ionescu (Dir.)

Lausanne, EPFL, 2016. DOI : 10.5075/epfl-thesis-6980.

Single field effect transistor capacitor-less memory device and method of operating the same

A. BiswasN. DagtekinM. A. Ionescu

US9508854 ; US2015179800 . 2016.

The Electron-Hole Bilayer TFET: Dimensionality Effects and Optimization

C. AlperP. PalestriJ. L. PadillaA. M. Ionescu

IEEE Transactions on Electron Devices. 2016. DOI : 10.1109/TED.2016.2557282.

Vertical versus lateral tunneling FET non-volatile memory cell

A. BiswasS. TomarA. M. Ionescu

2016. 2016 IEEE Silicon Nanoelectronics Workshop (SNW), Honolulu, HI, USA, 12-13 June 2016. p. 42 - 43. DOI : 10.1109/SNW.2016.7577976.

Switching Behavior Constraint in the Heterogate Electron–Hole Bilayer Tunnel FET: The Combined Interplay Between Quantum Confinement Effects and Asymmetric Configurations

J. L. PadillaC. AlperF. GamizA. M. Ionescu

IEEE Transactions on Electron Devices. 2016. DOI : 10.1109/TED.2016.2556083.

Vertical band-to-band tunneling based non-volatile memory with high-K gate stack and stable hysteresis characteristics up to 400K

A. BiswasS. TomarA. M. Ionescu

2016. 2016 74th Annual Device Research Conference (DRC), Newark, DE, USA, 19-22 June 2016. p. 1 - 2. DOI : 10.1109/DRC.2016.7548493.

Graphene quantum capacitors for high-Q tunable LC-tanks for RF ICs

C. F. MoldovanW. A. VitaleM. TamagnoneJ. R. MosigA. M. Ionescu

2016. ESSDERC 2016 - 46th European Solid-State Device Research Conference, Lausanne, Switzerland, 12-15 September 2016. p. 345 - 348. DOI : 10.1109/ESSDERC.2016.7599657.

Reconfigurable electronics based on metal-insulator transition : steep-slope switches and high frequency functions enabled by Vanadium Dioxide

W. A. Vitale / M. A. IonescuC. Dehollain (Dir.)

Lausanne, EPFL, 2016. DOI : 10.5075/epfl-thesis-6949.

Design and fabrication of high-k filled sub-100 nm gap resonators with embedded dielectric field effect transistor for ultra high frequency applications

E. A. CasuM. M. LopezW. A. VitaleM. Fernandez-BolanosA. M. Ionescu

2016. 2016 IEEE Silicon Nanoelectronics Workshop (SNW), Honolulu, HI, USA, 12-13 June 2016. p. 70 - 71. DOI : 10.1109/SNW.2016.7577989.

III-V Nanowire Hetero-junction Tunnel FETs integrated on Si

D. Cutaia / M. A. IonescuH. Riel (Dir.)

Lausanne, EPFL, 2016. DOI : 10.5075/epfl-thesis-7226.

Electrothermal actuation of vanadium dioxide for tunable capacitors and microwave filters with integrated microheaters

W. A. VitaleL. PetitC. F. MoldovanM. Fernández-BolañosA. Paone  et al.

Sensors and Actuators A: Physical. 2016. DOI : 10.1016/j.sna.2016.01.027.

Modeling and simulation of low power ferroelectric non-volatile memory tunnel field effect transistors using silicon-doped hafnium oxide as gate dielectric

A. SaeidiA. BiswasA. M. IonescuA. SaeidiA. Biswas  et al.

Solid-State Electronics. 2016. DOI : 10.1016/j.sse.2016.07.025.

Band-to-band tunneling distance analysis in the heterogate electron-hole bilayer tunnel field-effect transistor

J. L. PadillaA. PalomaresC. AlperF. GamizA. M. Ionescu

Journal Of Applied Physics. 2016. DOI : 10.1063/1.4940741.

Condition for the negative capacitance effect in metal–ferroelectric–insulator–semiconductor devices

A. RusuA. SaeidiA. M. Ionescu

Nanotechnology. 2016. DOI : 10.1088/0957-4484/27/11/115201.

Graphene Quantum Capacitors for High Frequency Tunable Analog Applications

C. F. MoldovanW. A. VitaleP. SharmaM. TamagnoneJ. R. Mosig  et al.

Nano Letters. 2016. DOI : 10.1021/acs.nanolett.5b05235.

Quantum Mechanical Confinement in the Fin Electron-Hole Bilayer Tunnel Field-Effect Transistor

J. L. PadillaC. AlperF. GamizA. M. Ionescu

IEEE Transactions on Electron Devices. 2016. DOI : 10.1109/Ted.2016.2574893.

Ultra-Low Power Ion-Sensing Smart Platform for Noninvasive Healthcare Applications

E. A. Garcia CorderoH. M. GuérinA. MuhechF. BellandoM. A. Ionescu

2016. Smart Systems Integration, Munich, Germany, March 9-10, 2016.

Double-Gate Negative-Capacitance MOSFET with PZT gate stack on Ultra-Thin Body SOI: an Experimentally Calibrated Simulation Study of Device Performance

A. SaeidiF. JazaeriI. StolichnovM. A. Ionescu

IEEE Transactions on Electron Devices. 2016. DOI : 10.1109/Ted.2016.2616035.

Investigation of the metal-insulator transition in VO2 for Electronic Switches with Sub-1mV/Decade Steep Subthreshold Slope

W. A. VitaleC. F. MoldovanA. PaoneA. SchulerA. M. Ionescu

2016. 2016 IEEE Silicon Nanoelectronics Workshop (SNW), Honolulu, HI, USA, 12-13 June 2016. p. 180 - 181. DOI : 10.1109/SNW.2016.7578041.

Tri-Band, Polarization-Independent Reflectarray at Terahertz Frequencies: Design, Fabrication, and Measurement

H. HasaniM. TamagnoneS. Capdevila CascanteC. F. MoldovanP. Maoddi  et al.

IEEE Transactions On Terahertz Science And Technology. 2016. DOI : 10.1109/Tthz.2016.2522301.

Underlap counterdoping as an efficient means to suppress lateral leakage in the electron–hole bilayer tunnel FET

C. AlperP. PalestriJ. L. PadillaM. A. Ionescu

Semiconductor Science and Technology. 2016. DOI : 10.1088/0268-1242/31/4/045001.

Near optimal graphene terahertz non-reciprocal isolator

M. TamagnoneC. MoldovanJ.-M. PoumirolA. B. KuzmenkoA. M. Ionescu  et al.

Nature Communications. 2016. DOI : 10.1038/ncomms11216.

Heterogeneous Integration of Low Power pH FinFET sensors with Passive Capillary Microfluidics and miniaturized Ag/AgCl quasi-Reference Electrode

E. A. Garcia CorderoH. M. GuérinA. MuhechF. BellandoM. A. Ionescu

2016. European Solid-State Device Research Conference (ESSDERC), Lausanne, Switzerland, September 12-15, 2016. p. 452 - 455. DOI : 10.1109/ESSDERC.2016.7599683.

Hybrid phase-change — Tunnel FET (PC-TFET) switch with subthreshold swing < 10mV/decade and sub-0.1 body factor: Digital and analog benchmarking

E. CasuW. VitaleN. OlivaT. RoscaA. Biswas  et al.

2016. 2016 IEEE International Electron Devices Meeting (IEDM), San Francisco, CA, USA, 3-7 December 2016. p. 19.3.1 - 19.3.4. DOI : 10.1109/IEDM.2016.7838452.

Assessment of Confinement-Induced Band-to-Band Tunneling Leakage in the FinEHBTFET

J. L. PadillaC. AlperF. GamizA. M. Ionescu

2016. 2nd Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon (EURSOI-ULIS), TU Wien, Inst Microelectron, Vienna, AUSTRIA, JAN 25-27, 2016. p. 20 - 23. DOI : 10.1109/ULIS.2016.7440042.

Field-enhanced design of steep-slope VO2 switches for low actuation voltage

W. A. VitaleM. TamagnoneC. F. MoldovanN. EmondE. A. Casu  et al.

2016. ESSDERC 2016 - 46th European Solid-State Device Research Conference, Lausanne, Switzerland, 12-15 September 2016. p. 352 - 355. DOI : 10.1109/ESSDERC.2016.7599659.

Solid-gap resonators based on PVDF-TrFE

M. M. LopezE. A. CasuW. A. VitaleA. M. Ionescu

2016. 2016 IEEE Silicon Nanoelectronics Workshop (SNW), Honolulu, HI, USA, 12-13 June 2016. p. 72 - 73. DOI : 10.1109/SNW.2016.7577990.

Response to Comment on Assessment of field-induced quantum confinement in heterogate germanium electron-hole bilayer tunnel field-effect transistor

J. L. Padilla de la TorreC. AlperF. GámizM. A. Ionescu

Applied Physics Letters. 2015. DOI : 10.1063/1.4905866.

Two dimensional quantum mechanical simulation of low dimensional tunneling devices

C. AlperP. PalestriL. LattanzioJ. PadillaA. Ionescu

Solid-State Electronics. 2015. DOI : 10.1016/j.sse.2015.05.030.

Performance evaluation of novel technologies for terahertz reflectarrays

M. TamagnoneS. Capdevila CascanteH. HasaniP. RomanoW. A. Vitale  et al.

2015. 2015 European Microwave Week, Paris, France, September, 6-11, 2015. p. 393 - 396. DOI : 10.1109/EuMIC.2015.7345152.

Fabrication of CMOS-compatible abrupt electronic switches based on vanadium dioxide

W. A. VitaleC. F. MoldovanA. PaoneA. SchülerA. M. Ionescu

Microelectronic Engineering. 2015. DOI : 10.1016/j.mee.2015.03.055.

Graphene negative differential resistance (GNDR) circuit with enhanced performance at room temperature

P. SharmaL. S. BernardA. BazigosA. MagrezA. M. Ionescu

2015. Device Research Conference (DRC), 2015 73rd Annual, Columbus, OH, USA, June 21-24, 2015. p. 267 - 268. DOI : 10.1109/DRC.2015.7175676.

Reversible supramolecular modification of surfaces

N. Moridi / M. A. IonescuP. Shahgaldian (Dir.)

Lausanne, EPFL, 2015. DOI : 10.5075/epfl-thesis-6861.

Spatial Variability in Large Area Single and Few-layer CVD Graphene

C. F. MoldovanK. GajewskiM. TamagnoneR. S. WeatherupH. Sugime  et al.

2015. Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon, Bologna, Italy, January 26-28, 2015.

Tunable Capacitors and Microwave Filters Based on Vanadium Dioxide Metal-Insulator Transition

W. A. VitaleM. Fernández-BolañosC. F. MoldovanA. PaoneA. Schüler  et al.

2015. 18th International Conference on Solid-State Sensors, Actuators and Microsystems Transducers 2015, Anchorage, Alaska, USA, June 21-25, 2015. p. 311 - 314. DOI : 10.1109/TRANSDUCERS.2015.7180923.

Room-Temperature Negative Differential Resistance in Graphene Field Effect Transistors: Experiments and Theory

P. SharmaL. S. BernardA. BazigosA. MagrezA. M. Ionescu

ACS Nano. 2015. DOI : 10.1021/nn5059437.

Graphene RF NEMS shunt switches for analog and digital phase shifters

C. F. MoldovanW. A. VitaleM. TamagnoneM. A. Ionescu

2015. Transducers Conference, Anchorage, Alaska, US, June, 21-25, 2015. p. 2029 - 2032. DOI : 10.1109/TRANSDUCERS.2015.7181354.

Efficient quantum mechanical simulation of band-to-band tunneling

C. AlperP. PalestriJ. L. PadillaA. GnudiR. Grassi  et al.

2015. 2015 Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon (EUROSOI-ULIS), Bologna, Italy, 26-28 January 2015. p. 141 - 144. DOI : 10.1109/ULIS.2015.7063793.

Carbon nanotube gas sensor array for multiplex analyte discrimination

H. GuerinH. Le PocheR. PohleE. BuitragoM. F.-B. Badia  et al.

Sensors And Actuators B-Chemical. 2015. DOI : 10.1016/j.snb.2014.10.117.

Large area suspended graphene for nano-mechanical devices

T. HallamC. F. MoldovanK. GajewskiA. M. IonescuG. S. Duesberg

Physica Status Solidi B-Basic Solid State Physics. 2015. DOI : 10.1002/pssb.201552269.

Compact modeling of DG-Tunnel FET for Verilog-A implementation

A. BiswasL. De MichielisA. BazigosA. M. Ionescu

2015. ESSDERC 2015 - 45th European Solid-State Device Research Conference, Graz, Austria, 14-18 September 2015. p. 40 - 43. DOI : 10.1109/ESSDERC.2015.7324708.

Design, Fabrication and Characterization of Terahertz Reflectarrays Based on a Silicon Substrate

H. HasaniM. TamagnoneS. Capdevila CascanteC. F. MoldovanM. A. Ionescu  et al.

2015. International Conference on Metamaterials, Photonic Crystals and Plasmonics, New York, US, August, 4-7, 2015.

Tunnel Field Effect Transistors : from Steep-Slope Electronic Switches to Energy Efficient Logic Applications

A. Biswas / M. A. Ionescu (Dir.)

Lausanne, EPFL, 2015. DOI : 10.5075/epfl-thesis-6802.

Fabrication process and characterization of suspended graphene membranes for RF NEMS capacitive switches

C. F. MoldovanW. A. VitaleP. SharmaL. S. BernardA. M. Ionescu

Microelectronic Engineering. 2015. DOI : 10.1016/j.mee.2015.01.032.

A capacitance-voltage model for DG-TFET

A. BiswasM. A. Ionescu

2015. IEEE Silicon Nanoelectronics Workshop, Kyoto, Japan, 14-15 June 2015. p. 1 - 2.

Graphene Negative Differential Resistance Circuit With Voltage-Tunable High Performance at Room Temperature

P. SharmaL. S. BernardA. BazigosA. MagrezA. M. Ionescu

IEEE Electron Device Letters. 2015. DOI : 10.1109/LED.2015.2445858.

Negative Differential Resistance in Top-Gated Chemical Vapor Deposition Grown Graphene Transistors

P. SharmaL. S. BernardA. BazigosA. MagrezM. A. Ionescu

2015. Graphene Conference, Bilbao, Spain, March 10-13, 2015.

CMOS-compatible abrupt switches based on VO2 metal-insulator transition

W. A. VitaleC. F. MoldovanA. PaoneA. SchuelerA. M. Ionescu

2015. Ultimate Integration on Silicon, Bologna, Italy, January 26-28, 2015. p. 53 - 56. DOI : 10.1109/ULIS.2015.7063771.

Sensing with Advanced Computing Technology: Fin Field-Effect Transistors with High-k Gate Stack on Bulk Silicon

S. RiganteP. ScarboloM. WipfR. L. StoopK. Bedner  et al.

ACS Nano. 2015. DOI : 10.1021/nn5064216.

Comment on 'Germanium electron-hole bilayer tunnel field-effect transistors with a symmetrically arranged double gale'

J. L. Padilla de la TorreC. AlperF. GámizM. A. Ionescu

Semiconductor Science and Technology. 2015. DOI : 10.1088/0268-1242/30/12/128001.

Assessment of Pseudo-Bilayer Structures in the Heterogate Germanium Electron-Hole Bilayer Tunnel Field-Effect Transistor

J. L. Padilla de la TorreC. AlperC. Medina-BailónF. GámizM. A. Ionescu

Applied Physics Letters. 2015. DOI : 10.1063/1.4923467.

Modeling the imaginary branch in III-V tunneling devices: Effective mass vs k.p

C. AlperM. VisciarelliP. PalestriJ. L. PadillaA. Gnudi  et al.

2015. 2015 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Washington DC, USA, 9-11 September 2015. p. 273 - 276. DOI : 10.1109/SISPAD.2015.7292312.

Evaluation of graphene for terahertz reflectarray antennas

M. TamagnoneS. Capdevila CascanteH. HasaniC. F. MoldovanM. A. Ionescu  et al.

2015. Graphene Week 2015, Manchester, UK, June, 22-26, 2015.

Practical Applications of Tunnel Field Effect Transistors

N. Daǧtekın / M. A. Ionescu (Dir.)

Lausanne, EPFL, 2015. DOI : 10.5075/epfl-thesis-6333.

Steep-slope Metal-Insulator-Transition VO2 Switches with Temperature-Stable High ION

W. A. VitaleC. F. MoldovanM. TamagnoneA. PaoneA. Schüler  et al.

IEEE Electron Device Letters. 2015. DOI : 10.1109/LED.2015.2454535.

Impact of Asymmetric Configurations on the Heterogate Germanium Electron-Hole Bilayer Tunnel Field-Effect Transistor Including Quantum Confinement

J. L. Padilla de la TorreC. AlperA. GodoyF. GámizM. A. Ionescu

IEEE Transactions on Electron Devices. 2015. DOI : 10.1109/TED.2015.2476350.

Graphene for Nanoelectronic Applications

P. Sharma / M. A. Ionescu (Dir.)

Lausanne, EPFL, 2015. DOI : 10.5075/epfl-thesis-6886.

Fine Pitch 3D-TSV Based High Frequency Components for RF MEMS Applications

W. A. VitaleM. Fernández-BolañosR. MerkelA. EnayatiI. Ocket  et al.

2015. IEEE Electronic Components and Technology Conference, San Diego, California, USA, May 26-29, 2015. p. 585 - 590. DOI : 10.1109/ECTC.2015.7159650.

Wafer-Level Hysteresis-Free Resonant Carbon Nanotube Transistors

J. CaoS. T. BartschA. M. Ionescu

Acs Nano. 2015. DOI : 10.1021/nn506817y.

Ultra Fine-Pitch TSV Technology for Ultra-Dense High-Q RF Inductors

W. A. VitaleM. Fernández-BolañosA. KlumppJ. WeberP. Ramm  et al.

2015. 2015 Symposium on VLSI Technology, Kyoto, Japan, June 15-19, 2015. p. T52 - T53. DOI : 10.1109/VLSIT.2015.7223700.

Self-biased reconfigurable graphene stacks for terahertz plasmonics

J. S. Gomez-DiazC. MoldovanS. Capdevila CascanteJ. RomeuL. S. Bernard  et al.

Nature Communications. 2015. DOI : 10.1038/ncomms7334.

Solid-gap wine-glass mode disks VB-FET resonators applied to biomass sensing

M. M. LopezM. F.-B. BadiaW. VitaleA. M. Ionescu

Microelectronic Engineering. 2015. DOI : 10.1016/j.mee.2015.03.005.

Electromechanical design space exploration for electrostatically actuated ohmic switches using extended parallel plate compact model

A. BazigosC. L. AyalaS. RanaD. GroggM. Fernandez-Bolaños  et al.

Solid-State Electronics. 2014. DOI : 10.1016/j.sse.2014.06.030.

High Performance, Vertically Stacked SiNW/Fin Based 3D FETs for Biosensing Applications

E. Buitrago Godinez / M. A. IonescuM. Fernandez-Bolanos Badia (Dir.)

Lausanne, EPFL, 2014. DOI : 10.5075/epfl-thesis-6258.

The top-down fabrication of a 3D-integrated, fully CMOS-compatible FET biosensor based on vertically stacked SiNWs and FinFETs

E. BuitragoM. Fernández-BolañosS. RiganteC. F. ZilchN. S. Schröter  et al.

Sensors and Actuators B: Chemical. 2014. DOI : 10.1016/j.snb.2013.11.123.

Gas sensing technology based on carbon nanotube arrays

H. M. Guerin / M. A. Ionescu (Dir.)

Lausanne, EPFL, 2014. DOI : 10.5075/epfl-thesis-6281.

Two Dimensional Quantum Mechanical Simulation of Low Dimensional Tunneling Devices

C. AlperP. PalestriL. LattanzioJ. L. PadillaA. M. Ionescu

2014. 44th European Solid-State Device Research Conference (ESSDERC), 44th European Solid-State Device Research Conference (ESSDERC)']. p. 186 - 189. DOI : 10.1109/ESSDERC.2014.6948791.

Investigation of Tunnel Field-Effect Transistors as a Capacitor-less Memory Cell

A. BiswasN. DagtekinW. GrabinskiA. BazigosC. L. Royer  et al.

Applied Physics Letters. 2014. DOI : 10.1063/1.4867527.

1T Capacitor-less DRAM cell based on asymmetric Tunnel FET design

A. BiswasA. M. Ionescu

IEEE Journal of the Electron Devices Society. 2014. DOI : 10.1109/JEDS.2014.2382759.

Compact Modeling of Homojunction Tunnel FETs

A. BiswasN. DagtekinC. AlperL. De MichielisA. Bazigos  et al.

2014. 21st International Conference on Mixed Design of Integrated Circuits and Systems (MIXDES)', u'21st International Conference on Mixed Design of Integrated Circuits and Systems (MIXDES). p. 54 - 57. DOI : 10.1109/MIXDES.2014.6872152.

Steep slope VO2 switches for wide-band (DC-40 GHz) reconfigurable electronics

W. A. VitaleA. PaoneM. Fernandez-BolanosA. BazigosW. Grabinski  et al.

2014. 72nd Device Research Conference, Santa Barbara, California, USA, June 22-25, 2014. p. 29 - 30. DOI : 10.1109/DRC.2014.6872284.

Electrical characterization of high performance, liquid gated vertically stacked SiNW-based 3D FET biosensors

E. BuitragoM. F.-B. BadiaY. M. GeorgievR. YuO. Lotty  et al.

Sensors And Actuators B-Chemical. 2014. DOI : 10.1016/j.snb.2014.03.099.

Analytical Compact Model in Verilog-A for Electrostatically Actuated Ohmic Switches

A. BazigosC. L. AyalaM. Fernandez-BolanosY. PuD. Grogg  et al.

IEEE Transactions on Electron Devices. 2014. DOI : 10.1109/TED.2014.2318199.

Junctionless nano-electro-mechanical resonant transistor

S. BartschM. A. Ionescu

US9397285 ; US2015137068 ; WO2013156978 ; WO2013156978 . 2014.

Technological development of high-k dielectric FinFETs for liquid environment

S. RiganteP. ScarboloD. BouvetM. WipfK. Bedner  et al.

Solid-State Electronics. 2014. DOI : 10.1016/j.sse.2014.04.012.

Investigation of Partially Gated Si Tunnel FETs for Low Power Integrated Optical Sensing

N. DagtekinA. M. Ionescu

2014. 44th European Solid-State Device Research Conference (ESSDERC)', 44th European Solid-State Device Research Conference (ESSDERC)'. p. 190 - 193. DOI : 10.1109/ESSDERC.2014.6948792.

Partially gated lateral tunnel field effect transistor for optical applications

N. DagtekinA. M. Ionescu

Applied Physics Letters. 2014. DOI : 10.1063/1.4904026.

Electron mobility extraction in triangular gate-all-around Si nanowire junctionless nMOSFETs with cross-section down to 5 nm

M. NajmzadehM. BerthomeJ.-M. SalleseW. GrabinskiA. M. Ionescu

Solid-State Electronics. 2014. DOI : 10.1016/j.sse.2014.04.007.

Junctionless Silicon Nanowire Resonator

S. T. BartschM. ArpM. A. Ionescu

IEEE Journal of the Electron Devices Society. 2014. DOI : 10.1109/JEDS.2013.2295246.

Study of Fin-Tunnel FETs with doped pocket as Capacitor-less 1T DRAM

A. BiswasM. A. Ionescu

2014. SOI-3D-Subthreshold Microelectronics Technology Unified Conference (S3S), San Francisco, California, USA, December 6-9, 2014. DOI : 10.1109/S3S.2014.7028203.

Conformal Mapping Based DC Current Model For Double Gate Tunnel FETs

A. BiswasL. De MichielisC. AlperM. A. Ionescu

2014. 15th International Conference on Ultimate Integration on Silicon (ULIS), Stockholm ,Sweden, April 7-9, 2014. p. 85 - 88. DOI : 10.1109/ULIS.2014.6813922.

High-yield, in-situ fabrication and integration of horizontal carbon nanotube arrays at the wafer scale for robust ammonia sensors

H. GuerinH. Le PocheR. PohleL. S. BernardE. Buitrago  et al.

Carbon. 2014. DOI : 10.1016/j.carbon.2014.07.009.

Wearable Sensors for medical applications

M. A. IonescuA. Bazigos

CATRENE Scientific Committee Workshop 2014, Brussels, Belgium, 2014-02-04.

Finfet with fully PH-responsive HfO2 as highly stable biochemical sensor

S. RiganteM. WipfA. BazigosK. BednerD. Bouvet  et al.

2014. 2014 IEEE 27th International Conference on Micro Electro Mechanical Systems (MEMS), San Francisco, CA, USA, 26-30 01 2014. p. 1063 - 1066. DOI : 10.1109/MEMSYS.2014.6765828.

Growth optimization of vanadium dioxide films on SiO2/Si substrates

W. A. VitaleA. PaoneC. F. MoldovanA. SchuelerM. A. Ionescu

2014. 40th Micro and Nano Engineering, Lausanne, Switzerland, September 22-26, 2014.

Measurement of biased graphene stacks at terahertz: dynamic reconfiguration and hysteresis

J. S. Gomez-DiazC. MoldovaS. CapdevillaL. S. BernardJ. Romeu  et al.

2014. 8th European Conference on Antennas and Propagation (EuCAP), The Hague, The Netherlands, April, 6-11, 2014.

Assessment of field-induced quantum confinement in heterogate germanium electron-hole bilayer tunnel field-effect transistor

J. L. PadillaC. AlperF. GamizA. M. Ionescu

Applied Physics Letters. 2014. DOI : 10.1063/1.4894088.

High-K Dielectric FinFETs on Si-Bulk for Ionic and Biological Sensing Integrated Circuits

S. Rigante / M. A. Ionescu (Dir.)

Lausanne, EPFL, 2014. DOI : 10.5075/epfl-thesis-6134.

Electromagnetic Performance of RF NEMS Graphene Capacitive Switches

P. SharmaJ. Perruisseau-CarrierC. MoldovanA. M. Ionescu

IEEE Transactions on Nanotechnology. 2014. DOI : 10.1109/TNANO.2013.2290945.

Component design and testing for a miniaturised autonomous sensor based on a nanowire materials platform

G. FagasM. NolanY. M. GeorgievR. YuO. Lotty  et al.

2014. Conference on Smart Sensors, Actuators and MEMS within the SPIE EUROPE Symposium on Microtechnologies. p. 971 - 988. DOI : 10.1007/s00542-014-2100-4.

Single Crystal Silicon UHF Wine-Glass Ring Resonator with HfO2 Solid Dielectric Gap embedded in a Field Effect Transistor

E. A. CasuS. RiganteM. Fernandez-Bolanos BadiaM. A. Ionescu

40th Micro and Nano Engineering Conference, Lausanne, CH, September 22-26, 2014.

Tungsten Through Silicon Vias for 3D high quality factor embedded RF MEMS inductors

W. A. VitaleM. Fernández-Bolaños BadíaR. WielandJ. WeberA. Klumpp  et al.

2013. 39th International Conference on Micro and Nano Engineering, London, UK, September 16-19, 2013.

Towards Nanomechanics and Nanoelectronics on a Single Chip

S. T. Bartsch / M. A. Ionescu (Dir.)

Lausanne, EPFL, 2013. DOI : 10.5075/epfl-thesis-5888.

Silicon nanowires reliability and robustness investigation using AFM-based techniques

T. BieniekG. JanczykP. JanusP. GrabiecM. Nieprzecki  et al.

2013. DOI : 10.1117/12.2031229.

A study on 1T Capacitor-less Tunnel FET DRAM Exploiting Ungated Body

A. BiswasN. DagtekinW. GrabinskiA. BazigosC. Le Royer  et al.

2013. ISDRS 2013, Washington DC, USA, December 11-13, 2013.

RF MEMS power sensors for ultra-low power wake-up circuit applications

W. A. VitaleM. Fernández-Bolaños BadíaA. BazigosC. DehollainA. M. Ionescu

2013. 43rd Solid-State Device Research Conference (ESSDERC), Bucharest, Romania, September 16-20, 2013. DOI : 10.1109/ESSDERC.2013.6818875.

Junctionless silicon nanowire transistors for the tunable operation of a highly sensitive, low power sensor

E. BuitragoG. FagasM. F.-B. BadiaY. M. GeorgievM. Berthomé  et al.

Sensors and Actuators B: Chemical. 2013. DOI : 10.1016/j.snb.2013.03.028.

Horizontal growth of dense carbon nanotube membranes for interconnects and sensors

H. Le PocheA. FournierJ. DijonH. OkunoH. Guerin  et al.

2013. Annual meeting of the GDR-I GNT: Graphene and Nanotubes Science and Applications, Ecully, France, January 23-27, 2012.

Quantum Mechanical Study of the Germanium Electron-Hole Bilayer Tunnel FET

C. AlperL. LattanzioL. De MichielisP. PalestriL. Selmi  et al.

IEEE Transactions on Electron Devices. 2013. DOI : 10.1109/TED.2013.2274198.

Tunneling and Occupancy Probabilities: How Do They Affect Tunnel-FET Behavior?

L. De MichielisL. LattanzioK. E. MoselundH. RielA. M. Ionescu

IEEE Electron Device Letters. 2013. DOI : 10.1109/LED.2013.2257665.

FinFET integrated low-power circuits for enhanced sensing applications

S. RiganteP. LiviA. RusuY. ChenA. Bazigos  et al.

Sensors and Actuators B: Chemical. 2013. DOI : 10.1016/j.snb.2013.06.031.

An innovative band-to-band tunneling analytical model and implications in compact modeling of tunneling-based devices

L. De MichielisN. DağTekinA. BiswasL. LattanzioL. Selmi  et al.

Applied Physics Letters. 2013. DOI : 10.1063/1.4821100.

Ultra low power NEMFET based logic

M. EnachescuM. LefterA. BazigosA. M. IonescuS. Dan Cotofana

2013. 2013 IEEE International Symposium on Circuits and Systems (ISCAS), Beijing, China, 19-23 05 2013. p. 566 - 569. DOI : 10.1109/ISCAS.2013.6571905.

Nanoelectromechanical microwave switch based on graphene

P. SharmaJ. Perruisseau CarrierA. M. Ionescu

2013. 2013 14th International Conference on Ultimate Integration on Silicon (ULIS), Coventry, United Kingdom, 19-21 03 2013. p. 189 - 192. DOI : 10.1109/ULIS.2013.6523516.

Tunnel FET with non-uniform gate capacitance for improved device and circuit level performance

C. AlperL. De MichielisN. DağtekinL. LattanzioD. Bouvet  et al.

Solid-State Electronics. 2013. DOI : 10.1016/j.sse.2013.02.032.

Ferroelectric tunnel fet switch and memory

M. A. Ionescu

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Sustained Nano-Mechanical Oscillation of a Resonant-Body Transistor by Frequency-Modulated Heterodyne Phase-Locked-Loop

S. T. BartschA. RusuM. A. Ionescu

2013. 2013 Symposia on VLSI Technology and Circuits (2013 Silicon Nanoelectronics Workshop), Kyoto, Japan, June 9-14, 2013.

Mobility Extraction Assessment in GAA Si NW JL FETs with Cross-Section Down to 5 nm

M. NajmzadehJ.-M. SalleseM. BerthomeW. GrabinskiA. M. Ionescu

2013. 14th International Conference on Ultimate Integration on Silicon (ULIS). p. 106 - 109. DOI : 10.1109/ULIS.2013.6523512.

Encapsulated Low Frequency Vibrating Body Field Effect Resonator

M. Hermersdorf / M. A. Ionescu (Dir.)

Lausanne, EPFL, 2013. DOI : 10.5075/epfl-thesis-5634.

High-k dielectric FinFETs towards Sensing Integrated Circuits

S. RiganteP. ScarboloD. BouvetM. WipfA. Tarasov  et al.

2013. 14th International Conference on Ultimate Integration on Silicon (ULIS). p. 73 - 76. DOI : 10.1109/ULIS.2013.6523494.

Large-scale, in-situ integration of horizontal carbon nanotube arrays into gas sensing devices

H. GuerinH. Le PocheM. Fernandez-Bolaños BadiaJ. DijonM. A. Ionescu

Micronarc Alpine Meeting, 4th edition, Villars-sur-Ollon, Switzerland, January 13-15, 2013.

Gate-all-around buckled dual Si nanowire nMOSFETs on bulk Si for transport enhancement and digital logic

M. NajmzadehY. TsuchiyaD. BouvetW. GrabinskiA. M. Ionescu

Microelectronic Engineering. 2013. DOI : 10.1016/j.mee.2013.02.003.

Innovative Tunnel Field-Effect Transistor Architectures

L. Lattanzio / M. A. Ionescu (Dir.)

Lausanne, EPFL, 2013. DOI : 10.5075/epfl-thesis-5691.

Functionalized 3D 7x20-array of vertically stacked SiNW FET for streptavidin sensing

E. BuitragoM. F.-B. BadiaY. M. GeorgievR. YuO. Lotty  et al.

2013. 2013 71st Annual Device Research Conference (DRC), Notre Dame, IN, USA, 23-26 06 2013. p. 1 - 2. DOI : 10.1109/DRC.2013.6633887.

Carbon Nanotube Precise Assembly for CMOS and NEMS Applications

J. Cao / M. A. Ionescu (Dir.)

Lausanne, EPFL, 2013. DOI : 10.5075/epfl-thesis-5651.

Beyond Scaling : Physics and Modeling for Pushing the Frontiers of Low-Power Devices

L. De Michielis / M. A. IonescuL. Selmi (Dir.)

Lausanne, EPFL, 2012. DOI : 10.5075/epfl-thesis-5504.

La récolte d’énergie pour les micro et nanosystèmes autonomes

D. BriandM. A. Ionescu

Journal ElectroSuisse. 2012.

Nanoelectronics: Ferroelectric devices show potential

A. M. Ionescu

Nature Nanotechnology. 2012. DOI : 10.1038/nnano.2012.10.

In-situ grown horizontal carbon nanotube membranes for sensitive & selective gas sensing

H. GuerinH. Le PocheJ. DijonM. A. Ionescu

LEA micro-engineering workshop, 11th edition, Arc-et-Senans, France, September 6-7, 2012.

Local volume depletion/accumulation in GAA Si nanowire junctionless nMOSFETs

M. NajmzadehJ.-M. SalleseM. BerthoméW. GrabinskiM. A. Ionescu

IEEE Transactions on Electron Devices. 2012. DOI : 10.1109/TED.2012.2220363.

From All-Si Nanowire TFETs Towards III-V TFETs

H. Ghoneim / M. A. IonescuH. Riel (Dir.)

Lausanne, EPFL, 2012. DOI : 10.5075/epfl-thesis-5534.

TCAD Simulation of SOI TFETs and Calibration of Non-local Band-to-Band Tunneling Model

A. BiswasS. S. DanC. Le RoyerW. GrabinskiM. A. Ionescu

Microelectronic Engineering. 2012. DOI : 10.1016/j.mee.2012.07.077.

Gate-All-Around Buckled Dual Si Nanowire nMOSFETs on Bulk Si for Transport Enhancement and Digital Logic Application

M. NajmzadehY. TsuchiyaD. BouvetW. GrabinskiM. A. Ionescu

2012. 38th International Conference on Micro and Nano Engineering (MNE), Toulouse, France, September 16-20, 2012.

Non-contact characterization of graphene surface impedance at micro and millimeter waves

J. S. Gomez-DiazJ. Perruisseau-CarrierP. SharmaM. A. Ionescu

Journal of Applied Physics. 2012. DOI : 10.1063/1.4728183.

RF MEMS Shunt Capacitive Switches Using AlN Compared to Si3N4 Dielectric

M. Fernández-Bolaños BadíaE. BuitragoA. M. Ionescu

Journal of Microelectromechanical Systems. 2012. DOI : 10.1109/JMEMS.2012.2203101.

Multigate Buckled Self-Aligned Dual Si Nanowire MOSFETs on Bulk Si for High Electron Mobility

M. NajmzadehY. TsuchiyaD. BouvetW. GrabinskiM. A. Ionescu

IEEE Transactions on Nanotechnology. 2012. DOI : 10.1109/TNANO.2012.2205401.

Resonant-Body Silicon Nanowire Field Effect Transistor without Junctions

S. BartschC. DupréE. OllierM. A. Ionescu

2012. 2012 IEEE International Electron Devices Meeting IEDM, San Francisco, USA, December 10-13, 2012. p. 15.2.1 - 15.2.4. DOI : 10.1109/IEDM.2012.6479046.

On the Static and Dynamic Behavior of the Germanium Electron-Hole Bilayer Tunnel FET

L. LattanzioN. DagtekinL. De MichielisA. M. Ionescu

IEEE Transactions on Electron Devices. 2012. DOI : 10.1109/Ted.2012.2211600.

Experimental confirmation of temperature dependent negative capacitance in ferroelectric field effect transistor

G. A. SalvatoreA. RusuA. M. Ionescu

Applied Physics Letters. 2012. DOI : 10.1063/1.4704179.

Tunnel FET with non-uniform gate capacitance for improved device and circuit level performance

C. AlperL. De MichielisN. DagtekinL. LattanzioA. M. Ionescu

2012. ESSDERC 2012 - 42nd European Solid State Device Research Conference, Bordeaux, France, 17-21 09 2012. p. 161 - 164. DOI : 10.1109/ESSDERC.2012.6343358.

The electron–hole bilayer tunnel FET

L. LattanzioL. De MichielisA. M. Ionescu

Solid-State Electronics. 2012. DOI : 10.1016/j.sse.2012.04.016.

Understanding the Superlinear Onset of Tunnel-FET Output Characteristic

L. De MichielisL. LattanzioA. M. Ionescu

IEEE Electron Device Letters. 2012. DOI : 10.1109/LED.2012.2212175.

Phase-locked loop based on nanoelectromechanical resonant-body field effect transistor

S. T. BartschA. RusuM. A. Ionescu

Applied Physics Letters. 2012. DOI : 10.1063/1.4758991.

Self-Aligned Lateral Dual-Gate Suspended-Body Single-Walled Carbon Nanotube Field-Effect Transistors

J. CaoA. M. Ionescu

Applied Physics Letters. 2012. DOI : 10.1063/1.3682085.

In-situ grown horizontal carbon nanotube membrane

H. GuerinD. TsamadosH. Le PocheJ. DijonA. M. Ionescu

Microelectronic Engineering. 2012. DOI : 10.1016/j.mee.2012.05.017.

High-Q 3D Embedded Inductors using TSV for RF MEMS Tunable Bandpass Filters (4.65-6.8 GHz)

W. A. VitaleM. Fernandez-Bolanos BadiaM. A. Ionescu

2012. 42nd European Microwave Conference, Amsterdam, Netherlands. p. 822 - 825.

Streched organic transistors maintain mobility on flexible substrates

K. SidlerN. V. CvetkovicD. TsamadosA. M. IonescuJ. Brugger  et al.

Microelectronic Engineering. 2012. DOI : 10.1016/j.mee.2012.07.080.

New Tunnel-FET Architecture with Enhanced Ion and Improved Miller Effect for Energy Efficient Switching

A. BiswasC. AlperL. D. MichielisA. M. Ionescu

2012. 70th Device Research Conference, State College, PA, USA, June 18-20, 2012. p. 131 - 132. DOI : 10.1109/DRC.2012.6256999.

Nanomechanical Silicon Resonators with Intrinsic Tunable Gain and Sub-nW Power Consumption

S. T. BartschA. LoveraD. GroggA. M. Ionescu

ACS Nano. 2012. DOI : 10.1021/nn203517w.

Organic half-wave rectifier fabricated by stencil lithography on flexible substrate

N. V. CvetkovicK. SidlerV. SavuJ. BruggerD. Tsamados  et al.

Microelectronic Engineering. 2012. DOI : 10.1016/j.mee.2012.07.110.

Multi-gate Si nanowire MOSFETs : fabrication, strain engineering and transport analysis

M. Najmzadeh / M. A. Ionescu (Dir.)

Lausanne, EPFL, 2012. DOI : 10.5075/epfl-thesis-5507.

Self-Assembled Nano-Electro-Mechanical Tri-state Carbon Nanotube Switches for Reconfigurable Integrated Circuits

J. CaoW. A. VitaleA. M. Ionescu

2012. IEEE MEMS 2012, Paris, Jan. 29-Feb. 2, 2012. p. 188 - 191. DOI : 10.1109/MEMSYS.2012.6170148.

Negative Capacitance Transistor

A. Rusu / M. A. Ionescu (Dir.)

Lausanne, EPFL, 2012. DOI : 10.5075/epfl-thesis-5276.

Complementary Germanium Electron-Hole Bilayer Tunnel FET for Sub-0.5-V Operation

L. LattanzioL. De MichielisA. M. Ionescu

IEEE Electron Device Letters. 2012. DOI : 10.1109/LED.2011.2175898.

Large-Scale Assembly of Tunable Resonant-Body Carbon Nanotube Transistors without Hysteresis

J. CaoS. BartschM. A. Ionescu

2012. IEEE International Electron Devices Meeting IEDM, San Francisco, USA, Dec 10-13, 2012. p. 15.3.1 - 15.3.4. DOI : 10.1109/IEDM.2012.6479047.

Study on dual-lateral-gate suspended-body single-walled carbon nanotube field-effect transistors

J. CaoA. M. Ionescu

Solid-State Electronics. 2012. DOI : 10.1016/j.sse.2012.04.022.

Single Active Nanoelectromechanical Tuning Fork Front-End Radio-Frequency Receiver

S. BartschA. RusuM. A. Ionescu

Nanotechnology. 2012. DOI : 10.1088/0957-4484/23/22/225501.

Accumulation-mode gate-all-around Si nanowire nMOSFETs with sub-5 nm cross-section and high uniaxial tensile strain

M. NajmzadehD. BouvetW. GrabinskiJ.-M. SalleseM. A. Ionescu

2012. p. 114 - 120. DOI : 10.1016/j.sse.2012.04.021.

A Novel Extraction Method and Compact Model for the Steepness Estimation of FDSOI TFET Lateral Junction

S. S. DanA. BiswasC. L. RoyerW. GrabinskiA. M. Ionescu

IEEE Electron Device Letters. 2012. DOI : 10.1109/LED.2011.2174027.

Determination of minimum conductivity of graphene from contactless microwaves measurements

P. SharmaJ. S. Gomez-DiazM. A. IonescuJ. Perruisseau-Carrier

2012. IEEE NANO 2012 - 12th International Conference on Nanotechnology, Birmingham, UK, August, 20-23, 2012. DOI : 10.1109/NANO.2012.6322060.

Vertically stacked Si nanostructures for biosensing applications

E. BuitragoM. Fernández-BolañosA. M. Ionescu

Microelectronic Engineering. 2012. DOI : 10.1016/j.mee.2012.03.017.

Precise Alignment of Individual Carbon Nanotubes for Nanoelectronics

J. CaoA. M. Ionescu

2012. 12th IEEE International Conference on Nanotechnology (IEEE-NANO). DOI : 10.1109/NANO.2012.6322187.

Lateral Gate Suspended-Body Carbon Nanotube Field-Effect-Transistors with Sub-100nm Air Gap by Precise Positioning Method

J. CaoA. M. Ionescu

2011. Device Research Conference (DRC 2011), Santa Barbara, USA, June 20-22, 2011.

SWNT array resonant gate MOS transistor

A. ArunS. CampidelliA. FiloramoV. DeryckeP. Salet  et al.

Nanotechnology. 2011. DOI : 10.1088/0957-4484/22/5/055204.

Integration for All Configurations

A. M. IonescuJ. DijonJ. Robertson

IEEE Microwave Magazine. 2011. DOI : 10.1109/MMM.2011.942700.

The Vibrating Body Transistor

D. GroggA. M. Ionescu

IEEE Transactions on Electron Devices. 2011. DOI : 10.1109/TED.2011.2147786.

Resist-assisted assembly of single-walled carbon nanotube devices with nanoscale precision

J. CaoC. NyffelerK. ListerA. M. Ionescu

Carbon. 2011. DOI : 10.1016/j.carbon.2011.12.006.

Scalable conformal array for multi-gigabit body centric wireless communication

A. VasylchenkoJ. F. FarserotuS. BrebelsW. De RaedtM. Fernandez-Bolanos Badia  et al.

2011. 5th International Symposium on Medical Information & Communication Technology (ISMICT), 2011, Montreux, Switzerland, March 27-30, 2011. p. 74 - 78. DOI : 10.1109/ISMICT.2011.5759800.

An Improved Precise Positioning Method for Self-Assembly of Lateral-Gate Carbon Nanotube Field-Effect-Transistors

J. CaoA. M. Ionescu

2011. MNE 11, Berlin, Germany, Sept. 19-23, 2011.

Tunnel-FET architecture with improved performance due to enhanced gate modulation of the tunneling barrier

L. De MichielisL. LattanzioP. PalestriL. SelmiA. M. Ionescu

2011. 2011 69th Annual Device Research Conference (DRC), Santa Barbara, CA, USA, June 20-22, 2011. p. 111 - 112. DOI : 10.1109/DRC.2011.5994440.

Electron-hole bilayer tunnel FET for steep subthreshold swing and improved ON current

L. LattanzioL. De MichielisA. M. Ionescu

2011. ESSDERC 2011 - 41st European Solid State Device Research Conference, Helsinki, Finland, September 12-16, 2011. p. 259 - 262. DOI : 10.1109/ESSDERC.2011.6044185.

A Microfabricated 1-D Metamaterial Unit Cell Matched From DC to Millimeter-Waves

J. Perruisseau-CarrierF. BongardM. Fernandez-BolanosA. M. Ionescu

IEEE Microwave and Wireless Components Letters. 2011. DOI : 10.1109/LMWC.2011.2162617.

Miniature Sensor Node with Conformal Phased Array

G. A. E. VandenboschA. VasylchenkoM. Fernandez-Bolanos BadiaS. BrebelsW. De Raedt  et al.

Radioengineering. 2011.

A tunneling field-effect transistor exploiting internally combined band-to-band and barrier tunneling mechanisms

L. LattanzioA. BiswasL. De MichielisA. M. Ionescu

Applied Physics Letters. 2011. DOI : 10.1063/1.3569760.

Tunneling path impact on semi-classical numerical simulations of TFET devices

L. De MichielisM. IellinaP. PalestriA. M. IonescuL. Selmi

2011. 2011 12th International Conference on Ultimate Integration on Silicon (ULIS), Cork, Ireland, 14-16 03 2011. p. 1 - 4. DOI : 10.1109/ULIS.2011.5758002.

Self-Aligned Double-Gate Suspended-Body Single-Walled Carbon Nanotube Field-Effect-Transistors

J. CaoA. M. Ionescu

2011. ESSDERC 11, Helsinki, Finland, Sept. 12-16, 2011. p. 315 - 318. DOI : 10.1109/ESSDERC.2011.6044171.

Carbon Nanotube Crossed Junction by Two Step Dielectrophoresis

A. ArunP. SaletA. M. Ionescu

Journal Of Nanoscience And Nanotechnology. 2011. DOI : 10.1166/jnn.2011.4116.

Self-Aligned Double-Gate Suspended-Body Carbon Nanotube Field-Effect transistors For RF Applications

J. CaoA. M. Ionescu

2011. Transducers’11, Beijing, China, June 5-9, 2011. p. 2730 - 2733. DOI : 10.1109/TRANSDUCERS.2011.5969810.

Organic Thin-Film Transistors and Circuits Fabricated by Stencil Lithography on Full-Wafer Flexible Substrates

N. Cvetkovic / M. A. IonescuD. Tsamados (Dir.)

Lausanne, EPFL, 2011. DOI : 10.5075/epfl-thesis-5102.

Effect of the choice of the tunnelling path on semi-classical numerical simulations of TFET devices

L. De MichielisM. IellinaP. PalestriA. M. IonescuL. Selmi

Solid-State Electronics. 2011. DOI : 10.1016/j.sse.2011.10.012.

Guardian Angels for a Smarter Life: Enabling a Zero-Power Technological Platform for Autonomous Smart Systems

A. M. IonescuC. Hierold

2011. 2nd European Future Technologies Conference and Exhibition (FET), Budapest, HUNGARY, May 04-06, 2011. p. 43 - 46. DOI : 10.1016/j.procs.2011.12.016.

Ultra low power: Emerging devices and their benefits for integrated circuits

A. M. IonescuL. De MichielisN. DagtekinG. SalvatoreJ. Cao  et al.

2011. 2011 IEEE International Electron Devices Meeting (IEDM), Washington, DC, USA, 5-7 December 2011. p. 16.1.1 - 16.1.4. DOI : 10.1109/IEDM.2011.6131563.

High aspect ratio sub-micron trenches on silicon-on-insulator and bulk silicon

M. HermersdorfC. HibertD. GroggA. M. Ionescu

Microelectronic Engineering. 2011. DOI : 10.1016/j.mee.2011.02.030.

RF-MEMS switches with AlN dielectric and their applications

M. Fernandez-Bolanos BadiaP. NicoleM. A. Ionescu

International Journal of Microwave and Wireless Technologies. 2011. DOI : 10.1017/S175907871100064X.

Local stressors to accommodate 1.2 to 5.6 GPa uniaxial tensile stress in suspended gate-all-around Si nanowire nMOSFETs by elastic local buckling

M. NajmzadehD. BouvetW. GrabinskiM. A. Ionescu

2011. International Semiconductor Device Research Symposium (IEEE ISDRS, biennial), University of Maryland, College Park, MD, USA, December 7-9, 2011. p. 1 - 2. DOI : 10.1109/ISDRS.2011.6135148.

FinFET for high sensitivity ion and biological sensing applications

S. RiganteL. LattanzioA. M. Ionescu

Microelectronic Engineering. 2011. DOI : 10.1016/j.mee.2010.12.064.

Accumulation-Mode GAA Si NW nFET with sub-5 nm cross-section and high uniaxial tensile strain

M. NajmzadehD. BouvetW. GrabinskiM. A. Ionescu

2011. The 41st European Solid-State Device Research Conference (IEEE ESSDERC), Helsinki, Finland, 12-16 Sep. 2011. p. 311 - 314. DOI : 10.1109/ESSDERC.2011.6044172.

Self-Aligned Back-Gated Suspended Body Single-Walled Carbon Nanotube Field-Effect-Transistors Fabricated by High-Precision Positioning Method

J. CaoA. M. Ionescu

2011. VLSI-TSA 2011, Hsinchu, Taiwan, April 25-27, 2011.

In-IC Strategies for 3D Devices in Bulk Silicon

M. Bopp / M. A. IonescuP. Coronel (Dir.)

Lausanne, EPFL, 2011. DOI : 10.5075/epfl-thesis-4864.

Horizontally and on-site grown carbon nanotube membrane for sensitive and selective gas sensing

H. GuerinD. TsamadosH. Le PocheJ. DijonM. A. Ionescu

2011. 37th International Conference on Micro & Nano Engineering, Berlin, Germany, September 19-23, 2011.

Floating-potential self-assembly of singe-walled carbon nanotube field effect transistors by ac-dielectrophoresis

J. CaoA. ArunC. NyffelerA. M. Ionescu

Microelectronic Engineering. 2011. DOI : 10.1016/j.mee.2011.01.026.

Self-Assembly of Doubly-Clamped/Cantilevered Carbon Nanotube Arrays by a Precise Positioning Method

J. CaoA. M. Ionescu

2011. International Conference on the Science and Application of Nanotubes (NT'11), Cambridge, UK, July 11-16, 2011.

Uniaxially tensile strained accumulation-mode gate-all-around Si nanowire nMOSFETs

M. NajmzadehD. BouvetW. GrabinskiM. A. Ionescu

2011. 69th annual IEEE Device Research Conference (IEEE DRC), Santa Barbara, California, USA, 20-22 June 2011. p. 145 - 146. DOI : 10.1109/DRC.2011.5994458.

Tunnel field-effect transistors as energy-efficient electronic switches

A. M. IonescuH. Riel

Nature. 2011. DOI : 10.1038/nature10679.

Modeling the Temperature Dependence of Fe-FET Static Characteristics Based on Landau's Theory

G. A. SalvatoreL. LattanzioD. BouvetA. M. Ionescu

IEEE Transactions on Electron Devices. 2011. DOI : 10.1109/TED.2011.2160868.

Ferroelectric Field Effect Transistor for Memory and Switch Applications

G. A. Salvatore / M. A. IonescuD. Bouvet (Dir.)

Lausanne, EPFL, 2011. DOI : 10.5075/epfl-thesis-4990.

Integration of Engineered Source and Drain Extensions in Double Gate Mosfet with Sub-32nm Channel Length

J. Bhandari / M. A. IonescuM. Vinet (Dir.)

Lausanne, EPFL, 2011. DOI : 10.5075/epfl-thesis-4824.

Corner Effect and Local Volume Inversion in SiNW FETs

L. De MichielisK. E. MoselundL. SelmiA. M. Ionescu

Ieee Transactions On Nanotechnology. 2011. DOI : 10.1109/TNANO.2010.2080284.

Floating-Potential Self-Assembly of Singe-Walled Carbon Nanotube Transistors by Ac-Dielectrophoresis

J. CaoA. M. Ionescu

2010. MNE 2010, Genoa, Italy, September 19-22, 2011.

Double-gate pentacene thin-film transistor with improved control in sub-threshold region

D. TsamadosN. V. CvetkovicK. SidlerJ. BhandariV. Savu  et al.

Solid-State Electronics. 2010. DOI : 10.1016/j.sse.2010.04.019.

Abrupt switch based on internally combined band-to-band and barrier tunneling mechanisms

L. LattanzioA. BiswasL. De MichielisA. M. Ionescu

2010. 40th European Solid-State Device Research Conference (ESSDERC)/36th European Solid-State Circuits Conference (ESSCIRC), Seville, SPAIN, Sep 14-16, 2010. p. 234 - 239. DOI : 10.1016/j.sse.2011.06.035.

Ferroelectric transistors with improved characteristics at high temperature

G. A. SalvatoreL. LattanzioD. BouvetI. StolichnovN. Setter  et al.

Applied Physics Letters. 2010. DOI : 10.1063/1.3467471.

RF NEM capacitive switch based on dense horizontal arrays of CNTs

D. AcquavivaA. ArunS. EsconjaureguiJ. CaoR. Smajda  et al.

2010. p. 143 - 144. DOI : 10.1109/DRC.2010.5551878.

Capacitive nanoelectromechanical switch based on suspended carbon nanotube array

D. AcquavivaA. ArunS. EsconjaureguiD. BouvetJ. Robertson  et al.

Applied Physics Letters. 2010. DOI : 10.1063/1.3525165.

Asymmetrically strained all-silicon multi-gate n-Tunnel FETs

M. NajmzadehK. BoucartW. RiessA. M. Ionescu

Solid-State Electronics. 2010. DOI : 10.1016/j.sse.2010.04.037.

Demonstrations of Wireless Autonomous Sensors for Aeronautical Applications

P. NicoleJ. J. PagazaniM. FeralP. LartiguesP. Couderc  et al.

2010. Smart System Integration (SSI), Como (Italy), March 23-24, 2010.

Active multi gate micro-electro-mechanical device with built-in transistor

M. A. IonescuD. Grogg

US8872240 ; US2011298553 ; TW201110545 ; US2010171569 ; WO2010058351 . 2010.

Simulation of Double-Gate Silicon Tunnel FETs with a High-k Gate Dielectric

K. Boucart / M. A. IonescuW. Riess (Dir.)

Lausanne, EPFL, 2010. DOI : 10.5075/epfl-thesis-4729.

Organic Thin Film Transistors on Flexible Polyimide Substrates Fabricated by Full Wafer Stencil Lithography

K. SidlerN. CvetkovicA. V. SavuD. TsamadosM. A. Ionescu  et al.

Sensors and Actuators A: Physical. 2010. DOI : 10.1016/j.sna.2010.04.016.

Metal-Ferroelectric-Metal-Oxide-Semiconductor Field Effect Transistor with Sub-60mV/decade Subthreshold Swing and Internal Voltage Amplification

A. RusuG. A. SalvatoreD. JimenezA. M. Ionescu

2010. International Electron Devices Meeting (IEDM), San Francisco, CA, Dec 06-08, 2010. p. 16.3.1 - 16.3.4. DOI : 10.1109/IEDM.2010.5703374.

Test structure and method for the experimental investigation of internal voltage amplification and surface potential of ferroelectric MOSFETs

A. RusuG. A. SalvatoreA. M. Ionescu

2010. 40th European Solid-State Device Research Conference (ESSDERC)/36th European Solid-State Circuits Conference (ESSCIRC), Seville, SPAIN, Sep 14-16, 2010. p. 151 - 156. DOI : 10.1016/j.sse.2011.06.038.

The Curie temperature as a key design parameter of ferroelectric Field Effect Transistors

G. A. SalvatoreL. LattanzioD. BouvetA. M. Ionescu

2010. ESSDERC 2010 - 40th European Solid State Device Research Conference, Sevilla, Spain, September 14-16, 2010. p. 218 - 221. DOI : 10.1109/ESSDERC.2010.5618386.

Dipole antenna and distributed MEMS phase shifter fully integrated in a single wafer process for beam steering applications

M. Fernández-BolañosA. VasylchenkoP. DainesiS. BrebelsW. De Raedt  et al.

Microelectronic Engineering. 2010. DOI : 10.1016/j.mee.2009.10.009.

Non-hysteretic ferroelectric tunnel FET with improved conductance at Curie temperature

L. LattanzioG. A. SalvatoreA. M. Ionescu

2010. 2010 68th Annual Device Research Conference (DRC), Notre Dame, IN, USA, June 21-23, 2010. p. 67 - 68. DOI : 10.1109/DRC.2010.5551937.

RF MEMS Switches for Wide-band (5 - 40 GHz), Tuneable Filters and DMTL Phase Shifters

M. Fernandez-Bolaños Badia / M. A. Ionescu (Dir.)

Lausanne, EPFL, 2010. DOI : 10.5075/epfl-thesis-4737.

Tunable band-stop filter based on single RF MEMS capacitive shunt switch with meander arm inductance

M. Fernández-BolañosC. DehollainP. NicoleA. M. Ionescu

Solid-State Electronics. 2010. DOI : 10.1016/j.sse.2010.04.030.

Silicon nanowires with lateral uniaxial tensile stress profiles for high electron mobility gate-all-around MOSFETs

M. NajmzadehL. De MichielisD. BouvetP. DobroszS. Olsen  et al.

Microelectronic Engineering. 2010. DOI : 10.1016/j.mee.2009.11.024.

Carbon nanotube vertical membranes for electrostatically actuated micro-electro-mechanical devices

A. ArunD. AcquavivaM. Fernández-BolañosP. SaletH. Le-Poche  et al.

Microelectronic Engineering. 2010. DOI : 10.1016/j.mee.2009.10.021.

Abrupt switch based on internally combined Band-To-Band and Barrier Tunneling mechanisms

L. LattanzioL. De MichielisA. BiswasA. M. Ionescu

2010. ESSDERC 2010 - 40th European Solid State Device Research Conference, Sevilla, Spain, September 14-16, 2010. p. 353 - 356. DOI : 10.1109/ESSDERC.2010.5618215.

An experimental investigation of the surface potential in ferroelectric P(VDF-TrFE) FETs

A. RusuG. SalvatoreA. Ionescu

2010. 35th International Conference on Micro-and Nano-Engineering, Ghent, BELGIUM, Sep 28-Oct 01, 2009. p. 1607 - 1609. DOI : 10.1016/j.mee.2009.10.047.

Wafer Level Assembly of Single-Walled Carbon Nanotube Arrays with Precise Positioning

J. CaoA. ArunK. ListerD. AcquavivaJ. Bhandari  et al.

2010. Nanotech 2010, Anaheim, CA, USA.

Active Microelectromechanical Resonator : The Vibrating Body Field Effect Transistor

D. Grogg / M. A. Ionescu (Dir.)

Lausanne, EPFL, 2010. DOI : 10.5075/epfl-thesis-4673.

Electronic devices: Nanowire transistors made easy

A. M. Ionescu

Nature Nanotechnology. 2010. DOI : 10.1038/nnano.2010.38.

Electrical modeling and design of a wafer-level package for MEM resonators

J. Perruisseau-CarrierM. MazzaA. JourdainA. K. SkrivervikA. M. Ionescu  et al.

IEEE Transactions on Advanced Packaging. 2010. DOI : 10.1109/TADVP.2010.2043101.

Vibrating Body Transistors: Enabling Fin-FET Nano-Electro-Mechanical Resonators

A. M. Ionescu

2010. 2010 IEEE International Frequency Control Symposium, New Port Beach, CA, Jun 01-04, 2010. p. 333 - 333. DOI : 10.1109/FREQ.2010.5556318.

The Hysteretic Ferroelectric Tunnel FET

A. M. IonescuL. LattanzioG. A. SalvatoreL. De MichielisK. Boucart  et al.

IEEE Transactions on Electron Devices. 2010. DOI : 10.1109/TED.2010.2079531.

Heterogeneous Integration for Novel Functionality

M. Fernandez-Bolanos BadiaM. A. Ionescu

2010. 3D System Integration Conference (3DIC), Munic, Germany, November 16-18, 2010. p. 1 - 19. DOI : 10.1109/3DIC.2010.5751423.

The high-mobility bended n-channel silicon nanowire transistor

K. E. MoselundM. NajmzadehP. DobroszS. H. OlsenD. Bouvet  et al.

IEEE Transactions on Electron Devices. 2010. DOI : 10.1109/TED.2010.2040939.

Carbon Nanotube Electromechanical Devices for Radio Frequency Applications

A. Arun / M. A. Ionescu (Dir.)

Lausanne, EPFL, 2010. DOI : 10.5075/epfl-thesis-4800.

Tunable Electromechanical Resonator Based On Carbon Nanotube Array Suspended Gate Field Effect Transistor (Cnt-Sgfet)

A. ArunM. F. GoffmanD. GroggA. FiloramoS. Campidelli  et al.

2010. 23rd IEEE International Conference on Micro Electro Mechanical Systems (MEMS 2010), Hong Kong, PEOPLES R CHINA, Jan 24-28, 2010. p. 112 - 115. DOI : 10.1109/MEMSYS.2010.5442552.

Nano-Electro-Mechanical vibrating body FET resonator for high frequency integrated oscillators

D. GroggA. LoveraA. M. Ionescu

2010. p. 183 - 184. DOI : 10.1109/DRC.2010.5551898.

Resonant-Body Fin-FETs with sub-nW power consumption

S. T. BartschD. GroggA. LoveraD. TsamadosS. Ayoez  et al.

2010. International Electron Devices Meeting (IEDM), San Francisco, CA, Dec 06-08, 2010. p. 7.6.1 - 7.6.4. DOI : 10.1109/IEDM.2010.5703318.

Tunable MEMS capacitors using vertical carbon nanotube arrays grown on metal lines

A. ArunH. L. PocheT. IddaD. AcquavivaM. Fernandez-Bolanos Badia  et al.

Nanotechnology. 2010. DOI : 10.1088/0957-4484/22/2/025203.

3D stacked arrays of fins and nanowires on bulk silicon

M. BoppP. CoronelC. HibertA. M. Ionescu

Microelectronic Engineering. 2010. DOI : 10.1016/j.mee.2009.12.036.

Three-level Stencil Alignment Fabrication of a High-k Gate Stack Organic Thin Film Transistor

N. CvetkovicK. Sidler ArnetA. V. SavuJ. BruggerD. Tsamados  et al.

36th International Conference on Micro & Nano Engineering (MNE), Genoa, Italy, September 19-22, 2010.

A quasi-analytical model for nanowire FETs with arbitrary polygonal cross section

L. De MichielisL. SelmiA. M. Ionescu

Solid-State Electronics. 2010. DOI : 10.1016/j.sse.2010.04.039.

Nano-Electro-Mechanical Switches Based on Carbon Nanotubes Arrays

D. Acquaviva / M. A. Ionescu (Dir.)

Lausanne, EPFL, 2010. DOI : 10.5075/epfl-thesis-4774.

A Study of Deterministic Positioning of Carbon Nanotubes by Dielectrophoresis

A. ArunP. SaletA. M. Ionescu

Journal of Electronic Materials. 2009. DOI : 10.1007/s11664-009-0797-0.

Investigation of bias-dependent series resistances and barrier height in Double Gate Schottky MOSFETs

J. BhandariM. VinetT. PoirouxJ.-M. SalleseB. Previtali  et al.

2009. IEEE International SOI Conference 2009, Foster City, CA, Oct 05-08, 2009. p. 131 - 132. DOI : 10.1109/SOI.2009.5318738.

9 MHz vibrating body FET tuning fork oscillator

D. GroggF. Lo ConteM. KayalA. M. Ionescu

2009. Joint Meeting of the 23rd European Frequency and Time Forum/IEEE International Frequency Control Symposium, Besancon, FRANCE, Apr 20-24, 2009. p. 520 - 523. DOI : 10.1109/FREQ.2009.5168235.

Centre frequency and bandwidth tunable bandpass filter based on RF MEMS (10-14GHz)

M. Fernández-BolañosC. DehollainS. AyozP. NicoleA. M. Ionescu

2009. 37th European Microwave Conference, Rome, ITALY, Sep 29-Oct 01, 2009. DOI : 10.23919/EUMC.2009.5296302.

Carbon Nanotubes Brush Varactor

A. ArunM. Fernandez-Bolanos BadiaP. SaletT. IddaR. Smajda  et al.

2009. 10th International Symposium of RF MEMS and RF Microsystems (MEMSWAVE), Trento, Italy, July 6-8, 2009.

Micro-Electro-Mechanical Switch Based on Suspended Horizontal Dense Mat of CNTs by FIB Nanomanipulation

D. AcquavivaA. ArunR. SmajdaD. GroggA. Magrez  et al.

2009. 23rd Eurosensors Conference, Lausanne, SWITZERLAND, Sep 06-09, 2009. p. 1411 - 1414. DOI : 10.1016/j.proche.2009.07.352.

MEMS technology for Radar front end modules.

S. B. ConstantP. NicoleL. MenagerM. LabeyrieC. Fourdin  et al.

2009. International Radar Conference - Surveillance for a Safer World, 2009. RADAR, October 12-16, 2009.

Lateral Strain Profile as Key Technology Booster for All-Silicon Tunnel FETs

K. BoucartW. RiessA. M. Ionescu

IEEE Electron Device Letters. 2009. DOI : 10.1109/LED.2009.2018127.

Small signal modeling of charge and piezoresistive modulations in active MEM resonators

D. GroggS. AyözD. TsamadosA. M. Ionescu

2009. p. 379 - 382. DOI : 10.1109/ESSDERC.2009.5331508.

Ultra-Sensitive Capacitive Detection Based on SGMOSFET Compatible With Front-End CMOS Process

E. ColinetC. DurandL. DuraffourgP. AudebertG. Dumas  et al.

IEEE Journal of Solid-State Circuits. 2009. DOI : 10.1109/JSSC.2008.2007448.

Ad-Hoc Wireless Sensor Networks For Exploration Of Solar-System Bodies

P. DuboisC. BotteronV. MitevC. MenonP.-A. Farine  et al.

Acta Astronautica. 2009. DOI : 10.1016/j.actaastro.2008.11.012.

High-quality factor MEMS based oscillator: Silicon 9 MHz oscillator with low phase noise and high quality factor

F. L. ConteD. GroggA. M. IonescuM. Kayal

2009. 16th International Conference Mixed Design of Integrated Circuits and Systems, Lodz, POLAND, Jun 25-27, 2009. p. 276 - 281.

Asymmetrically strained all-silicon Tunnel FETs featuring 1V operation

K. BoucartA. M. IonescuW. Riess

2009. p. 452 - 455. DOI : 10.1109/ESSDERC.2009.5331615.

Self-sustained Low Power Oscillator Based on Vibrating Body Field Effect Transistor

D. GroggS. AyoezA. M. Ionescu

2009. IEEE International Electron Devices Meeting (IEDM 2009), Baltimore, MD, Dec 07-09, 2009. p. 741 - 744. DOI : 10.1109/IEDM.2009.5424222.

Investigation of oxidation-induced strain in a top-down Si nanowire platform

M. NajmzadehD. BouvetP. DobroszO. SarahM. A. Ionescu

2009. INFOS 2009 (biennial), Cambridge, the UK, 28 June-1 July 2009.

Investigation of oxidation-induced strain in a top-down Si nanowire platform

M. NajmzadehD. BouvetP. DobroszS. OlsenA. M. Ionescu

Microelectronic Engineering. 2009. DOI : 10.1016/j.mee.2009.03.086.

An experimental study of temperature influence on electrical characteristics of ferroelectric P(VDF-TrFE) FETs on SOI

G. A. SalvatoreL. LattanzioD. BouvetA. M. Ionescu

2009. 2009 Proceedings of the European Solid State Device Research Conference (ESSDERC), Athens, Greece, 14-18 09 2009. p. 97 - 100. DOI : 10.1109/ESSDERC.2009.5331330.

Micro-electro-mechanical capacitors based on vertical carbon nanotube arrays

A. ArunD. AcquavivaM. Fernández-BolañosP. SaletH. Le-Poche  et al.

2009. p. 335 - 338. DOI : 10.1109/ESSDERC.2009.5331309.

Bulk Lateral MEM Resonator on Thin SOI With High Q-Factor

D. GroggH. C. TekinN. D. Ciressan-BadilaD. TsamadosM. Mazza  et al.

Journal of Microelectromechanical Systems. 2009. DOI : 10.1109/JMEMS.2008.2011689.

Silicon nanowires with lateral uniaxial tensile stress profiles for high electron mobility gate-all-around MOSFETs

M. NajmzadehL. De MichielisD. BouvetP. DobroszS. Olsen  et al.

2009. MNE 2009, Ghent, Belgium, 28 Sep.-1 Oct. 2009.

Nanogap MEM resonators on SOI

N.-D. Ciressan / M. A. IonescuM. Mazza (Dir.)

Lausanne, EPFL, 2009. DOI : 10.5075/epfl-thesis-4484.

Highly Tunable Band-Stop Filters Based on AIN RF MEM Capacitive Switches with Inductive Arms and Zipping Capacitive Coupling

M. Fernandez-BolanosT. LisecC. DehollainD. TsamadosP. Nicole  et al.

2009. IEEE International Electron Devices Meeting (IEDM 2009), Baltimore, MD, Dec 07-09, 2009. p. 753 - 756. DOI : 10.1109/IEDM.2009.5424217.

X-band MEMS technology for integrated Radar modules

S. B. ConstantP. NicoleM. LabeyrieC. RenardC. Fourdin  et al.

2009. p. 254 - 257.

Reliability of rf mems capacitive switches and distributed mems phase shifters using aln dielectric

M. Fernández-BolañosD. TsamadósP. DainesiA. M. Ionescu

2009. 22nd IEEE International Conference on Micro Electro Mechanical Systems (MEMS), Sorrentto, Italy, January 25-29, 2009.. p. 638 - 641. DOI : 10.1109/MEMSYS.2009.4805463.

Double-Gate Pentacene TFTs with Improved Control in Subthreshold Region

N. V. CvetkovicD. TsamadosK. SidlerJ. BhandariV. Savu  et al.

2009. 39th European Solid-State Device Research Conference (ESSDERC), Athens, Greece, September 14-18, 2009. p. 205 - 208. DOI : 10.1109/ESSDERC.2009.5331352.

Tunable band-stop filter based on single RF MEMS capacitive shunt switch with meander arm inductance

M. Fernández-BolañosC. DehollainP. NicoleA. M. Ionescu

2009. 39th European Solid-State Device Research Conference (ESSDERC), Athens, Greece, September 15-19, 2009. p. 331 - 334. DOI : 10.1109/ESSDERC.2009.5331304.

Microelectromechanical Metal-Air-Insulator-Semiconductor (MEM-MAIS) Diode: A Novel Hybrid Device for ESD Protection

D. AcquavivaD. TsamadosP. CoronelT. SkotnickiA. M. Ionescu

2009. 2009 IEEE 22nd International Conference on Micro Electro Mechanical Systems (MEMS), Sorrento, Italy, 25-29 01 2009. p. 132 - 135. DOI : 10.1109/MEMSYS.2009.4805336.

Retention in nonvolatile silicon transistors with an organic ferroelectric gate

R. GyselI. StolichnovA. K. TagantsevS. W. E. RiesterN. Setter  et al.

Applied Physics Letters. 2009. DOI : 10.1063/1.3158959.

A study of polarization effects in metal-ferroelectric-oxide-semiconductor capacitors

A. RusuG. SalvatoreA. M. Ionescu

2009. 32nd International Semiconductor Conference, Sinaia, ROMANIA, Oct 12-14, 2009. p. 517 - 520. DOI : 10.1109/SMICND.2009.5336660.

Optimization of the channel lateral strain profile for improved performance of multi-gate MOSFETs

L. De MichielisK. E. MoselundD. BouvetP. DobroszS. Olsen  et al.

2009. International Symposium on VLSI Technology, Systems and Applications, Hsinchu, TAIWAN, Apr 27-29, 2009. p. 119 - 120. DOI : 10.1109/VTSA.2009.5159319.

Sub-100μW low power operation of vibrating body FETs

D. GroggA. M. Ionescu

2009. International Symposium on VLSI Technology, Systems and Applications, Hsinchu, TAIWAN, Apr 27-29, 2009. p. 129 - 130. DOI : 10.1109/VTSA.2009.5159324.

Oscillator Based on Suspended Gate MOS Transistors

A. RusuM. MazzaY. S. ChauhanA. M. Ionescu

Romanian Journal Of Information Science And Technology. 2008.

3D Nanostructured Silicon Relying on Hard Mask Engineering for High Temperature Annealing (HME-HTA) Processes for Electronic Devices

M. BoppP. CoronelF. JudongK. JouannicA. Talbot  et al.

2008.

New functionality and ultra low power: key opportunities for post-CMOS era

A. M. Ionescu

2008. International Symposium on VLSI Technology, Systems and Applications, Hsinchu, TAIWAN, Apr 21-23, 2008. p. 72 - 73. DOI : 10.1109/VTSA.2008.4530804.

Finite element analysis and analytical simulations of Suspended Gate-FET for ultra-low power inverters

D. TsamadosY. Singh ChauhanC. EggimannK. AkarvardarH. S. Philip Wong  et al.

Solid-State Electronics. 2008. DOI : 10.1016/j.sse.2008.04.013.

Pentacene - SiO2 interface: Role of the environment prior to pentacene deposition and its impact on TFT DC characteristics

N. V. CvetkovicD. TsamadosK. SidlerJ. BruggerA. M. Ionescu

2008. 26th International Conference on Microelectronics (MIEL 2008), Nis, Serbia, May 11-14, 2008. DOI : 10.1109/ICMEL.2008.4559282.

DRAM Based on Hysteresis in Impact Ionization Single-Transistor-Latch

K. E. MoselundV. PottC. MeinenD. BouvetM. Kayal  et al.

2008.

A new definition of threshold voltage in Tunnel FETs

K. BoucartA. M. Ionescu

Solid-State Electronics. 2008. DOI : 10.1016/j.sse.2008.04.003.

SWCNT/MWCNT Crossed Junction by Two-Step Dielectrophoresis

A. ArunP. SaletA. M. Ionescu

2008.

Impact of lateral non-uniform doping and hot carrier degradation on capacitance behavior of high voltage MOSFETs

Y. S. ChauhanR. GillonM. DeclercqA. M. Ionescu

2008. 37th European Solid-State Device Research Conference, Munich, GERMANY, Sep 11-13, 2007. p. 426 - 429. DOI : 10.1109/ESSDERC.2007.4430969.

Non-hysteretic punchthrough impact ionization MOS (PIMOS) transistor: Application to abrupt inverter and NDR circuits

V. PottK. E. MoselundA. M. Ionescu

2008. p. 310 - 313. DOI : 10.1109/ESSDERC.2008.4681760.

Three-dimensional electronic devices fabricated on a top-down silicon nanowire platform

K. E. Moselund / M. A. Ionescu (Dir.)

Lausanne, EPFL, 2008. DOI : 10.5075/epfl-thesis-4068.

1T Memory Cell Based on PVDF-TrFE Field Effect Transistor

G. A. SalvatoreD. BouvetA. M. IonescuS. RiesterI. Stolichnov  et al.

2008. Material Research Society Spring meeting 2008, MRS 2008. p. 1067 - B03. DOI : 10.1557/PROC-1067-B03-02.

Editorial

A. M. IonescuL. D. Olavarrieta

Microelectronics Journal. 2008. DOI : 10.1016/j.mejo.2007.05.002.

Nano-gap high quality factor thin film SOI MEM resonators

D. GroggC. H. TekinD. N. Badila-CiressanD. TsamadosM. Mazza  et al.

2008.

Abrupt NMOS Inverter Based on Punch-Through Impact Ionization With Hysteresis in the Voltage Transfer Characteristics

K. E. MoselundD. BouvetA. M. Ionescu

IEEE Electron Device Letters. 2008. DOI : 10.1109/LED.2008.2001632.

High-Isolation Shunt-Series MEMS Switch for a Wide Frequency Range (6-40GHz)

M. Fernández-BolañosP. DainesiA. M. Ionescu

2008. 9th International Symposium of RF MEMS and RF Microsystem (MEMSWAVE), Heraklion (Greece), July 1-3, 2008.

Focussed ion beam based fabrication of micro-electro-mechanical resonators

D. GroggN. D. Badila-CiressanA. M. Ionescu

Microsystem Technologies. 2008. DOI : 10.1007/s00542-007-0464-4.

Prospects for logic-on-a-wire

K. E. MoselundD. BouvetM. H. Ben JamaaD. AtienzaY. Leblebici  et al.

Microelectronic Engineering. 2008. DOI : 10.1016/j.mee.2008.01.022.

Investigation of Strain Profile Optimization in Gate-All-Around Suspended Silicon Nanowire FET

M. NajmzadehK. E. MoselundP. DobroszS. OlsenA. ONeill  et al.

2008. IEEE ESSDERC 2008, Edinburgh, Scotland, Sep. 15-19, 2008.

Punch-through impact ionization MOSFET (PIMOS): From device principle to applications

K. E. MoselundD. BouvetV. PottC. MeinenM. Kayal  et al.

Solid-State Electronics. 2008. DOI : 10.1016/j.sse.2008.04.021.

Hysteretic inverter-on-a-body-tied-wire based on less-than-10mV/decade abrupt punch-through impact ionization MOS (PIMOS) switch

K. E. MoselundV. PottD. BouvetA. M. Ionescu

2008. p. 22 - 23. DOI : 10.1109/VTSA.2008.4530780.

NANOSIL network of excellence--silicon-based nanostructures and nanodevices for long-term nanoelectronics applications

F. BalestraE. ParkerD. LeadleyS. MantlE. Dubois  et al.

Materials Science in Semiconductor Processing. 2008. DOI : 10.1016/j.mssp.2008.09.017.

Low voltage Ferroelectric FET with sub-100nm copolymer P(VDF-TrFE) gate dielectric for non-volatile 1T memory

G. A. SalvatoreD. BouvetI. StolitchnovN. SetterA. M. Ionescu

2008. p. 162 - 165. DOI : 10.1109/ESSDERC.2008.4681724.

Micro-Electro-Mechanical Metal-Air-Insulator-Semiconductor Diode Switch

D. AcquavivaD. BouvetD. TsamadosP. CoronelT. Skotnicki  et al.

2008. 34th International Conference on Micro- and Nano-Engineering, Athens, GREECE, Sep 15-18, 2008. p. 1074 - 1077. DOI : 10.1016/j.mee.2009.02.007.

Thermally Stable Distributed MEMS Phase Shifter for Airborne and Space Applications

M. Fernandez-BolanosT. LisecP. DainesiA. M. Ionescu

2008. 38th European Microwave Conference, Amsterdam, The Netherlands, November 28-31, 2008. p. 100 - 103. DOI : 10.1109/EUMC.2008.4751397.

Double gate movable body Micro-Electro-Mechanical FET as hysteretic switch: Application to data transmission systems

D. GroggC. MeinenD. TsamadosH. C. TekinM. Kayal  et al.

2008. p. 302 - 305. DOI : 10.1109/ESSDERC.2008.4681758.

Silicon nanostructuring for 3D bulk silicon versatile devices

M. BoppP. CoronelJ. BustosC. PribatP. Dainesi  et al.

2008. 34th International Conference on Micro- and Nano-Engineering, Athens, GREECE, Sep 15-18, 2008. DOI : 10.1016/j.mee.2008.12.083.

Fabrication of MEMS Resonators in Thin SOI

D. GroggN. D. Badila-CiressanA. M. Ionescu

2008.

Oxide charging and memory effects in suspended-gate FET

D. MolineroN. AbeleL. CastanerA. M. Ionescu

2008. p. 685 - 688. DOI : 10.1109/MEMSYS.2008.4443749.

Trapping Individual Carbon Nanotubes

A. ArunP. SaletA. M. Ionescu

2008.

Study of n- and p-type dopants activation and dopants behavior with respect to annealing conditions in silicon germanium-on-insulator (SGOI)

J. BhandariM. VinetT. PoirouxB. PrevitaliB. Vincent  et al.

Materials Science and Engineering: B. 2008. DOI : 10.1016/j.mseb.2008.10.023.

0-level Vacuum Packaging RT Process for MEMS Resonators

N. AbeléD. GroggC. HibertF. CassetP. Ancey  et al.

2008.

Impact of Lateral Nonuniform Doping and Hot Carrier Injection on Capacitance Behavior of High Voltage MOSFETs

Y. S. ChauhanR. GillonM. DeclercqA. M. Ionescu

Iete Technical Review. 2008. DOI : 10.4103/0256-4602.44655.

Compact Modeling of Suspended Gate FET

Y. S. ChauhanD. TsamadosN. AbeleC. EggimannM. Declercq  et al.

2008. p. 119 - 124. DOI : 10.1109/VLSI.2008.11.

In-Plane Silicon-On-Nothing Nanometer-Scale Resonant Suspended Gate MOSFET for In-IC Integration Perspectives

C. DurandF. CassetP. RenauxN. AbeleB. Legrand  et al.

IEEE Electron Device Letters. 2008. DOI : 10.1109/LED.2008.919781.

Multi-gate vibrating-body field effect transistor (VB-FETs)

D. GroggM. MazzaD. TsamadosA. M. Ionescu

2008. p. 1 - 4. DOI : 10.1109/IEDM.2008.4796781.

RF MEMS capacitive switch on semi-suspended CPW using low-loss high-resistivity silicon substrate

M. Fernández-BolañosJ. Perruisseau-CarrierP. DainesiA. M. Ionescu

Microelectronic Engineering. 2008. DOI : 10.1016/j.mee.2008.01.093.

Fabrication and Characterization of Gate-All-Around Silicon Nanowires on Bulk Silicon

V. PottK. E. MoselundD. BouvetL. De MichielisA. M. Ionescu

IEEE Transactions on Nanotechnology. 2008. DOI : 10.1109/TNANO.2008.2007215.

Nano-gap micro-electro-mechanical bulk lateral resonators with high quality factors and low motional resistances on thin silicon-on-insulator

N. D. Badila-CiressanM. MazzaD. GroggA. M. Ionescu

Solid-State Electronics. 2008. DOI : 10.1016/j.sse.2008.04.022.

Analytical Modeling of the Suspended-Gate FET and Design Insights for Low-Power Logic

K. AkarvardarC. EggimannD. TsamadosY. Singh ChauhanG. C. Wan  et al.

IEEE Transactions on Electron Devices. 2008. DOI : 10.1109/TED.2007.911070.

Laterally vibrating-body double gate MOSFET with improved signal detection

D. GroggH. C. TekinN. D. Badila-CiressanM. MazzaD. Tsamados  et al.

2008. p. 155 - 156. DOI : 10.1109/DRC.2008.4800781.

Variability-Aware Design of Multilevel Logic Decoders for Nanoscale Crossbar Memories

H. Ben JamaaK. E. MoselundD. AtienzaD. BouvetA. M. Ionescu  et al.

IEEE Transactions on Computer-Aided Design of Integrated Circuits and Systems. 2008. DOI : 10.1109/TCAD.2008.2006076.

Demonstration of subthrehold swing smaller than 60mV/decade in Fe-FET with P(VDF-TrFE)/SiO₂ gate stack

G. A. SalvatoreD. BouvetA. M. Ionescu

2008. p. 1 - 4. DOI : 10.1109/IEDM.2008.4796642.

Nanoscale strain characterisation for ultimate CMOS and beyond

S. H. OlsenP. DobroszR. M. B. AgaibyY. L. TsangO. Alatise  et al.

2008. International Symposium on Beyond Silicon Technology held at the 2008 EMRS Spring Meeting, Strasbourg, FRANCE, May 26-30, 2008. p. 271 - 278. DOI : 10.1016/j.mssp.2009.06.003.

MEMS Tunable Capacitor with Fragmented Electrodes and Rotational Electro-Thermal Drive

A. MehdaouiM. B. PisaniD. TsamadosF. CassetP. Ancey  et al.

2007. 2006 Symposium on Design, Test, Integration and Packaging of MEMS / MOEMS, DTIP 2006, Stresa, Italy, April 2006. p. 1589 - 1594. DOI : 10.1007/s00542-006-0350-5.

Compact Modeling of Lateral Nonuniform Doping in High-Voltage MOSFETs

Y. S. ChauhanF. KrummenacherR. GillonB. BakerootM. J. Declercq  et al.

IEEE Transactions on Electron Devices. 2007. DOI : 10.1109/TED.2007.896597.

Fault-tolerant multi-level logic decoder for nanoscale crossbar memory arrays

M. H. B. JamaaD. AtienzaG. De MicheliK. E. MoselundD. Bouvet  et al.

2007. IEEE/ACM International Conference on Computer-Aided Design, San Jose, California, USA, November 4-8. p. 765 - 772. DOI : 10.1109/ICCAD.2007.4397358.

Integration of MOSFET transistors in MEMS resonators for improved output detection

D. GroggD. TsamadosN. D. BadilaA. M. Ionescu

2007. 14th International Conference on Solid-State Sensors, Actuators and Microsystems, Lyon, FRANCE, Jun 10-14, 2007. p. 1709 - 1712. DOI : 10.1109/SENSOR.2007.4300481.

Bended gate-all-around nanowire MOSFET: a device with enhanced carrier mobility due to oxidation-induced tensile stress

K. E. MoselundP. DobroszS. OlsenV. PottL. De Michielis  et al.

2007. IEEE International Electron Devices Meeting, Washington, DC, Dec 10-12, 2007. p. 191 - 194. DOI : 10.1109/IEDM.2007.4418899.

Fabrication of silicon-on-insulator MEM resonators with deep sub-micron transduction gaps

N. D. B. CiressanC. HibertM. MazzaA. M. Ionescu

Microsystem Technologies. 2007. DOI : 10.1007/s00542-006-0349-y.

Design and fabrication of suspended-gate MOSFETs for MEMS resonator, switch and memory applications

N. Abelé / M. A. IonescuP. Ancey (Dir.)

Lausanne, EPFL, 2007. DOI : 10.5075/epfl-thesis-3838.

A New Charge based Compact Model for Lateral Asymmetric MOSFET and its application to High Voltage MOSFET Modeling

Y. ChauhanF. KrummenacherR. GillonB. BakerootM. Declercq  et al.

2007. 20th International Conference on VLSI Design held jointly with 6th International Conference on Embedded Systems (VLSID'07), Bangalore, India, 6-10 01 2007. p. 177 - 182. DOI : 10.1109/VLSID.2007.15.

Abrupt current switching due to impact ionization effects in Omega-MOSFET on low doped bulk silicon

K. E. MoselundV. PottD. BouvetA. M. Ionescu

2007. 37th European Solid-State Device Research Conference, Munich, GERMANY, Sep 11-13, 2007. p. 287 - 290. DOI : 10.1109/ESSDERC.2007.4430934.

Threshold voltage in Tunnel FETs: physical definition, extraction, scaling and impact on IC design

K. BoucartA. M. Ionescu

2007. 37th European Solid-State Device Research Conference, Munich, GERMANY, Sep 11-13, 2007. p. 299 - 302. DOI : 10.1109/ESSDERC.2007.4430937.

Double-Gate Tunnel FET With High-k Gate Dielectric

K. BoucartA. M. Ionescu

IEEE Transactions on Electron Devices. 2007. DOI : 10.1109/TED.2007.899389.

Ultra-thin nanograin polysilicon devices for hybrid CMOS-NANO integrated circuits

S. Ecoffey / M. A. IonescuD. Bouvet (Dir.)

Lausanne, EPFL, 2007. DOI : 10.5075/epfl-thesis-3722.

Length scaling of the Double Gate Tunnel FET with a high-K gate dielectric

K. BoucartA. Ionescu

Solid-State Electronics. 2007. DOI : 10.1016/j.sse.2007.09.014.

Fabrication of Silicon-On-Insulator MEM Resonators with Deep Sub-Micron Transduction Gaps

N.-D. BadilaC. HibertM. MazzaA. M. Ionescu

2007. 2006 Symposium on Design, Test, Integration and Packaging of MEMS / MOEMS, DTIP 2006, Stresa, Italy, April 2006. p. 1489 - 1493. DOI : 10.1007/s00542-006-0349-y.

High Quality Factor Copper Inductors Integrated in Deep Dry Etched Quartz Substrates

C. LeroyM. B. PisaniC. HibertD. BouvetM. Puech  et al.

2007. 2006 Symposium on Design, Test, Integration and Packaging of MEMS / MOEMS, DTIP 2006, Stresa, Italy, April 2006. p. 1483 - 1487. DOI : 10.1007/s00542-006-0364-z.

Fragmented Membrane MEM Bulk Lateral Resonators with nano-gaps on 1.5 mu m SOI

N. D. Badila-CiressanM. MazzaD. GroggA. M. Ionescu

2007. 37th European Solid-State Device Research Conference, Munich, GERMANY, Sep 11-13, 2007. p. 430 - 433. DOI : 10.1109/ESSDERC.2007.4430970.

Capacités variables et inductances MEMS RF pour une intégration "Above-IC"

A. Mehdaoui / M. A. IonescuP. Ancey (Dir.)

Lausanne, EPFL, 2007. DOI : 10.5075/epfl-thesis-3790.

Cointegration of Gate-All-Around MOSFETs and Local Silicon-on-Insulator Optical Waveguides on Bulk Silicon

K. E. MoselundD. BouvetL. TschuorV. PottP. Dainesi  et al.

IEEE Transactions On Nanotechnology. 2007. DOI : 10.1109/TNANO.2006.886748.

High quality factor copper inductors integrated in deep dry-etched quartz substrates

C. LeroyM. B. PisaniC. HibertD. BouvetM. Puech  et al.

2007. Symposium on Design, Test, Integration and Packaging of MEMS/MOEMS, Stresa, ITALY, Apr 26-28, 2006. p. 1483 - 1487. DOI : 10.1007/s00542-006-0364-z.

An EKV-based high voltage MOSFET model with improved mobility and drift model

Y. ChauhanR. GillonB. BakerootF. KrummenacherM. Declercq  et al.

Solid-State Electronics. 2007. DOI : 10.1016/j.sse.2007.09.024.

Above-IC RF MEMS devices for communication applications

R. Fritschi / M. A. IonescuP. Flückiger (Dir.)

Lausanne, EPFL, 2007. DOI : 10.5075/epfl-thesis-3778.

Gate-all-around silicon nanowires for hybrid single electron transistor/CMOS applications

V. Pott / M. A. Ionescu (Dir.)

Lausanne, EPFL, 2007. DOI : 10.5075/epfl-thesis-3983.

Analytical Modeling of the Suspended-Gate FET and Design Insights for Digital Logic

K. AkarvardarC. EggimannD. TsamadosY. ChauhanG. C. Wan  et al.

2007. 2007 65th Annual Device Research Conference, South Bend, IN, USA, 18-20 06 2007. p. 103 - 104. DOI : 10.1109/DRC.2007.4373670.

Charge carriers photogeneration in pentacene field effect transistors

R. PlugaruC. AnghelA. M. Ionescu

Romanian Journal Of Information Science And Technology. 2007.

Copper / low-k technological platform for the fabrication of high quality factor above-IC passive devices

M. B. Pisani / M. A. IonescuC. Hibert (Dir.)

Lausanne, EPFL, 2007. DOI : 10.5075/epfl-thesis-3831.

Numerical and analytical simulations of Suspended Gate - FET for ultra-low power inverters

D. TsamadosY. S. ChauhanC. EggimannK. AkarvardarH. S. P. Wong  et al.

2007. 37th European Solid-State Device Research Conference, Munich, GERMANY, Sep 11-13, 2007. p. 167 - 170. DOI : 10.1109/ESSDERC.2007.4430905.

Small slope micro/nano-electronic switches

A. M. IonescuK. BoucartK. E. MoselundV. PottD. Tsamados

2007. International Semiconductor Conference, Sinaia, ROMANIA, Oct 15-17, 2007. p. 397 - 402. DOI : 10.1109/SMICND.2007.4519743.

Hybrid Nanowire-MOS circuit architectures: from basic physics to digital and analog applications

S. EcoffeyV. PottS. MahapatraD. BouvetA. M. Ionescu

2006.

Electrical conduction in 10 nm thin polysilicon wires from 4 to 400 K and their operation for hybrid memory

S. EcoffeyD. BouvetS. MahapatraG. ReimboldA. M. Ionescu

Japanese Journal of Applied Physics. 2006. DOI : 10.1143/JJAP.45.5461.

Polyimide sacrificial layer for SOI SG-MOSFET pressure sensor

M. Fernández-BolañosN. AbeléV. PottD. BouvetG. A. Racine  et al.

Microelectronic Engineering. 2006. DOI : 10.1016/j.mee.2005.12.021.

Capacitive pressure microsensor fabricated by bulk micromachining and sacricial layer etching

A. LuqueR. G. BoleaM. Fernandez-Bolanos BadiaM. A. IonescuJ. M. Quero

2006. 32nd Annual Conference of the IEEE Industrial Electronics Society, IECON 06, Paris, France, November 9-11, 2006. p. 2969 - 2974. DOI : 10.1109/IECON.2006.348052.

A new charge-based Compact Model for Lateral Asymmetric MOSFET

Y. S. ChauhanF. KrummenacherC. AnghelR. GillonB. Bakeroot  et al.

2006.

Analysis and Modeling of Lateral Non-Uniform Doping in High-Voltage MOSFETs

Y. S. ChauhanF. KrummenacherC. AnghelR. GillonB. Bakeroot  et al.

2006. DOI : 10.1109/IEDM.2006.347000.

A Compact DC and AC Model for Circuit Simulation of High Voltage VDMOS Transistor

Y. S. ChauhanC. AnghelF. KrummenacherR. GillonA. Baguenier  et al.

2006. DOI : 10.1109/ISQED.2006.7.

New Method for Threshold Voltage Extraction of High Voltage MOSFETs based on Gate-to-Drain Capacitance Measurement

C. AnghelB. BakerootY. S. ChauhanR. GillonC. Maier  et al.

IEEE Electron Device Letters. 2006. DOI : 10.1109/LED.2006.877275.

Hybrid CMOS - Single Electron Transistor Circuits: Promise or Dream

A. M. Ionescu

2006.

Vertical co-integration of AlSi MEMS tunable capacitors and Cu inductors for tunable LC blocks

A. MehdaouiM. B. PisaniR. FritschiP. AnceyA. M. Ionescu

2006.

Experimental study of the process dependence of Mo, Cr, Ti, and W silicon Schottky diodes and contact resistance

K. E. MoselundJ. E. FreiermuthP. DainesiA. M. Ionescu

IEEE Transactions on Electron Devices. 2006. DOI : 10.1109/TED.2006.870574.

MEMS Capacitive Pressure Sensor Based on Polysilicon Sealed Membrane

M. Fernández-BolañosP. DainesiA. LuqueJ. M. QueroA. M. Ionescu

2006. 20th Eurosensors, Gothenburg, Sweden, September 17-20, 2006. p. 456 - 457.

Nano-scale ICT devices and systems

A. M. Ionescu

2006.

A New Charge based EKV Compact Model for Lateral Asymmetric MOSFET

Y. S. ChauhanF. KrummenacherC. AnghelA. M. IonescuM. Declercq

2006.

Local volume inversion and corner effects in triangular gate-all-around MOSFETs

K. E. MoselundD. BouvetL. TschuorV. PottP. Dainesi  et al.

2006. ESSDERC 2006. p. 359 - 362. DOI : 10.1109/ESSDER.2006.307712..

Low temperature single electron characteristics in gate-all-around MOSFET

V. PottD. BouvetJ. BoucartL. TschuorK. E. Moselund  et al.

2006. p. 427 - 430. DOI : 10.1109/ESSDER.2006.307729.

Coulomb blockade in gate-all-around silicon nanowire MOSFETs

V. PottJ. BoucartD. BouvetK. E. MoselundA. M. Ionescu

2006. p. 25 - 26.

Double gate tunnel FET with ultrathin silicon body and high-k dielectric

K. BoucartA. M. Ionescu

2006. ESSDERC 2006. p. 383 - 386. DOI : 10.1109/ESSDER.2006.307718.

MEMS Tunable Capacitor with laterally driven fragmented electrodes and electro-thermal actuation

A. MehdaouiD. TsamadosF. CassetA. M. IonescuP. Ancey

2006.

Co-integration of gate-all-around MOSFETs and local silicon-on insulator optical waveguides on bulk silicon for GHz on-chip optical signaling

K. E. MoselundL. TschuorD. BouvetV. PottP. Dainesi  et al.

2006. p. 31 - 32.

Gate-all-around MOSFETs: true fabrication and characteristics

V. PottD. BouvetK. E. MoselundA. M. Ionescu

2006.

Fast and Efficient Light Intensity Modulation in SOI with Gate-All-Around Transistor Phase Modulator

P. DainesiK. E. MoselundL. ThévenazA. M. Ionescu

2006. 2005 Conference on Lasers and Electro-Optics (CLEO), Baltimore, USA, 2005. p. 110 - 112. DOI : 10.1109/CLEO.2005.201693.

Pentacene organic MOSFETs with Au and Pt bottom contacts

C. AnghelM. ManolescuA. M. Ionescu

2006. p. 301 - 304. DOI : 10.1109/SMICND.2006.284003.

Conduction in ultra-thin SOI nanowires prototyped by FIB milling

V. PottA. M. Ionescu

Microelectronic Engineering. 2006. DOI : 10.1016/j.mee.2006.01.116.

Ultra-low voltage MEMS resonator based on RSG-MOSFET

N. AbeléK. SéguéniK. BoucartF. CassetL. Buchaillot  et al.

2006. p. 882 - 885. DOI : 10.1109/MEMSYS.2006.1627941.

Compact gate-all-around silicon light modulator for ultra high speed operation

K. E. MoselundP. DainesiM. DeclercqM. BoppP. Coronel  et al.

Sensors and Actuators A: Physical. 2006. DOI : 10.1016/j.sna.2006.01.024.

A Highly Scalable High Voltage MOSFET Model

Y. S. ChauhanC. AnghelF. KrummenacherR. GillonS. Frere  et al.

2006. ESSDERC 2006, Montreux, Switzerland, 19-21 September 2006. p. 270 - 273. DOI : 10.1109/ESSDER.2006.307690.

Silicon nanowires patterning by sidewall and nano-oxidation processing

V. PottD. GroggJ. BruggerA. M. Ionescu

2005.

Light phase modulator

K. MoselundP. DainesiM. A. Ionescu

US2008030838 ; WO2005096076 . 2005.

Electrical conduction in 10nm-thin polysilicon wires from 4K to 400K and their operation for hybrid memory

S. EcoffeyD. BouvetG. ReimboldA. M. Ionescu

2005.

Fabrication of polysilicon gated-nanowires and their application for pA precision current measurements

S. EcoffeyV. PottD. BouvetY. LeblebiciM. J. Declercq  et al.

2005. 13th International Conference on Solid-State Sensors, Actuators and Microsystems (TRANSDUCERS '05), Seoul, Korea, June 5-9. p. 859 - 862. DOI : 10.1109/SENSOR.2005.1496553.

Conduction in ultra-thin SOI nanowires prototyped by FIB milling

V. PottA. M. Ionescu

2005.

Tunable Oscillating CMOS Pixel for Subretinal Implants

M. MazzaP. RenaudD. BertrandA. M. Ionescu

2005. IEEE Sensors 2005. DOI : 10.1109/ICSENS.2005.1597827.

Realization of Multiple Valued Logic and Memory by Hybrid SETMOS Architecture

S. MahapatraA. M. Ionescu

IEEE Transactions on Nanotechnology. 2005. DOI : 10.1109/TNANO.2005.858602.

Electrical characterization and modelling of lateral DMOS transistor : investigation of capacitances and hot-carrier impact

N. Hefyene / M. A. Ionescu (Dir.)

Lausanne, EPFL, 2005. DOI : 10.5075/epfl-thesis-3200.

Low temperature investigation of electrical conduction in polysilicon: simulation and experiment

S. EcoffeyS. MahapatraV. PottD. BouvetG. Reimbold  et al.

2005.

Infoscience

Nitrogen doping of vertically aligned carbon nanotubes for on-chip CMOS-compatible pseudocapacitive supercapacitors

H. W. LiJ. PiwekA. M. Ionescu

Carbon. 2026. DOI : 10.1016/j.carbon.2025.121018.

Pulsed Laser and Atomic Layer Deposition of CMOS-Compatible Vanadium Dioxide: Enabling Ultrathin Phase-Change Films

A. VariniC. MassereyV. ContiZ. Saadat SomaehsoflaE. Ansari  et al.

ACS Applied Electronic Materials. 2025. DOI : 10.1021/acsaelm.5c01132.

An Investigation of VO2 Nanowire Arrays for Integrated Sensing. From Non-Stochastic Nanowires to Stochastic Nanostructures

V. ContiA. IaconetaC. MassereyA. VariniR. Chiesa  et al.

2025. 2025 23rd International Conference on Solid-State Sensors, Actuators and Microsystems (Transducers), Orlando, FL, USA, 2025-06-29 - 2025-07-03. p. 494 - 497. DOI : 10.1109/transducers61432.2025.11110500.

CMOS-Compatible Biosensing Platform for Multiplexed Lactate and PH Monitoring in Low-Volume Biosamples

L. De SchrijverW. SijbersA. SaeidiQ. LinA. M. Ionescu

2025. 2025 23rd International Conference on Solid-State Sensors, Actuators and Microsystems (Transducers), Orlando, FL, USA, 2025-06-29 - 2025-07-03. p. 924 - 927. DOI : 10.1109/transducers61432.2025.11111474.

CMOS-Compatible Antiferroelectric-Dielectric Capacitors for Multifunctional Energy Storage and Tunable Electronics

H.-W. LiC. MassereyN. MartinolliI. StolichnovA. Ionescu

2025. 2025 23rd International Conference on Solid-State Sensors, Actuators and Microsystems (Transducers), Orlando, FL, USA, 2025-06-29 - 2025-07-03. p. 1197 - 1200. DOI : 10.1109/transducers61432.2025.11109140.

Bridging Blood and Skin: Biomarker Profiling in Dermal Interstitial Fluid (dISF) for Minimally Invasive Diagnostics

Y. SprungerJ. LongoA. SaeidiA. M. Ionescu

Biosensors. 2025. DOI : 10.3390/bios15050301.

Integration of Cobalt Ferromagnetic Control Gates for Electrical and Magnetic Manipulation of Semiconductor Quantum Dots (Adv. Funct. Mater. 14/2025)

F. BersanoM. AldeghiN. MartinolliV. BoureauT. Aboud  et al.

Advanced Functional Materials. 2025. DOI : 10.1002/adfm.202570080.

Nanomole Process: Enabling Localized Metallic Back-Gates for Enhanced Cryogenic Front-to-Back Coupling in FDSOI Quantum Dots

F. BersanoN. MartinolliI. BouquetL. ŽaperF. Braakman  et al.

IEEE Journal of the Electron Devices Society. 2025. DOI : 10.1109/JEDS.2025.3545661.

Vanadium-Doped Hafnium Oxide: A High-Endurance Ferroelectric Thin Film with Demonstrated Negative Capacitance

E. AnsariN. MartinolliE. HartmannA. VariniI. Stolichnov  et al.

NANO LETTERS. 2025. DOI : 10.1021/acs.nanolett.4c05671.

Integration of Cobalt Ferromagnetic Control Gates for Electrical and Magnetic Manipulation of Semiconductor Quantum Dots

F. BersanoM. AldeghiN. MartinolliV. BoureauT. Aboud  et al.

Advanced Functional Materials. 2025. DOI : 10.1002/adfm.202419940.

Future of Computing: towards Energy Efficient Cognitive Chips

A. M. Ionescu

2025. International VLSI Symposium on Technology, Systems and Applications (VLSI TSA 2025), Hsinchu, Taiwan, Province of China, 2025-04-21 - 2025-04-24. DOI : 10.1109/VLSITSA64674.2025.11047135.

Biomarkers in Interstitial Fluid: From Screening to Sensor Development

Y. C. Sprunger / M. A. Ionescu (Dir.)

Lausanne, EPFL, 2025. DOI : 10.5075/epfl-thesis-11266.

Electron Spin Qubit Architectures on Fully Depleted Silicon-On-Insulator Substrates for Scalable Quantum Computing

F. Bersano / M. A. Ionescu (Dir.)

Lausanne, EPFL, 2025. DOI : 10.5075/epfl-thesis-11089.

Wafer-Scale Demonstration of a Highly Sensitive Strain Sensor Based on Polycrystalline VO<inf>2</inf>

Z. Saadat SomaehsoflaC. MassereyA. VariniD. FlandreM. A. Ionescu

2025. 38th International Conference on Micro Electro Mechanical Systems, Kaohsiung, Taiwan, Province of China, 2025-01-19 - 2025-01-23. p. 635 - 638. DOI : 10.1109/MEMS61431.2025.10917570.

Cryogenic Front-to-Back Coupling in FD-SOI for Tunable Qubits by Localized Metallic Back-Gate

F. BersanoM. GhiniI. BouquetE. ColletteN. Martinolli  et al.

2024. 50th IEEE European Solid-State Electronics Research Conference, Bruges, Belgium, 2024-09-09 - 2024-09-12. p. 165 - 168. DOI : 10.1109/ESSERC62670.2024.10719596.

Graphene-enhanced ferroelectric domain wall high-output memristor

F. RischA. GilaniS. KamaeiA. M. IonescuI. Stolichnov

Applied Physics Letters. 2024. DOI : 10.1063/5.0232620.

AC-Driven Aptamer-Decorated Graphene FET for Cortisol Detection

A. GilaniA. SaeidiJ. LongoY. SprungerS. Kamaei  et al.

2024. IEEE Sensors, Kobe, Japan, 2024-10-20 - 2024-10-23. DOI : 10.1109/SENSORS60989.2024.10785129.

Aptamer-Decorated Graphene Channel Array with Liquid-Gating for Sensing Cortisol Stress Hormone

A. GilaniA. SaeidiS. SheibaniJ. LongoS. Kamaei  et al.

2024. IEEE BioSensors Conference, Cambridge, United Kingdom, 2024-07-28 - 2024-07-30. DOI : 10.1109/BioSensors61405.2024.10712663.

Controlled Electronic and Magnetic Landscape in Self-Assembled Complex Oxide Heterostructures

D.-S. ParkA. D. RataR. T. DahmK. ChuY. Gan  et al.

Advanced Materials. 2023. DOI : 10.1002/adma.202300200.

Millimeter-wave to near-terahertz sensors based on reversible insulator-to-metal transition in VO2

F. QaderiT. RoscaM. BurlaJ. LeutholdD. Flandre  et al.

Communications Materials. 2023. DOI : 10.1038/s43246-023-00350-x.

Ferroelectric Junctionless Double-Gate Silicon-On-Insulator FET as a Tripartite Synapse

C. GastaldiS. KamaeiM. CavalieriA. SaeidiI. Stolichnov  et al.

IEEE Electron Device Letters. 2023. DOI : 10.1109/LED.2023.3249972.

Nanoscale local modification of PMMA refractive index by tip-enhanced femtosecond pulsed laser irradiation

D. E. TrancaS. G. StanciuR. HristuA. M. IonescuG. A. Stanciu

Applied Surface Science. 2023. DOI : 10.1016/j.apsusc.2023.157014.

Static and Dynamic Stochastic Analysis of a Temperature-Sensitive VO<sub>2</sub> Spiking Neuron

N. BidoulT. RoscaA. M. IonescuD. Flandre

2023. IEEE 53rd European Solid-State Device Research Conference (ESSDERC), Lisbon, PORTUGAL, SEP 11-14, 2023. p. 81 - 84. DOI : 10.1109/ESSDERC59256.2023.10268509.

Model-Based ISO 14971 Risk Management of EEG-Based Medical Devices

N. YakymetsR. ZanettiM. A. IonescuD. Atienza Alonso

2023. 45th Annual International Conference of the IEEE Engineering in Medicine and Biology Society (EMBC), Sydney Australia, July 24-27, 2023. DOI : 10.1109/EMBC40787.2023.10340131.

Energy-Efficient Electronic Functions Based on the Co-integration of 2D and Ferroelectric Materials

S. Kamaei Bahmaei / M. A. Ionescu (Dir.)

Lausanne, EPFL, 2023. DOI : 10.5075/epfl-thesis-10096.

Metamodel for Safety Risk Management of Medical Devices Based on ISO 14971

N. YakymetsM. A. IonescuD. Atienza Alonso

2023. The ACM/IEEE 26th International Conference on Model-Driven Engineering Languages and Systems, Västerås, Sweden, October 1-6, 2023.

Ultra-High Sensitivity Silicon Nanowire Array Biosensor Based on a Constant-Current Method for Continuous Real-Time pH and Protein Monitoring in Interstitial Fluid

Y. C. SprungerL. CapuaT. ErnstS. BarraudA. M. Ionescu  et al.

2023. IEEE 49th European Solid-State Circuits Conference (ESSCIRC), Lisbon, PORTUGAL, SEP 11-14, 2023. p. 153 - 156. DOI : 10.1109/ESSCIRC59616.2023.10268731.

Monitoring of Protein and pH Levels in Human Biofluids using FD-SOI Silicon Nanowire Arrays

L. Capua / M. A. IonescuD. Locca (Dir.)

Lausanne, EPFL, 2023. DOI : 10.5075/epfl-thesis-9998.

Giant switchable non thermally-activated conduction in 180 degrees domain walls in tetragonal Pb(Zr,Ti)O-3

F. RischY. TikhonovI. LukyanchukA. M. IonescuI. Stolichnov

Nature Communications. 2022. DOI : 10.1038/s41467-022-34777-6.

Defect-induced magnetism in homoepitaxial SrTiO3

A. D. RataJ. Herrero-MartinI. MaznichenkoF. M. ChiabreraR. T. Dahm  et al.

Apl Materials. 2022. DOI : 10.1063/5.0101411.

Highly Sensitive Detection of the Antidepressant Fluoxetine With an Extended Gate Field Effect Transistor

S. SheibaniA. M. IonescuP. Norouzi

Ieee Sensors Journal. 2022. DOI : 10.1109/JSEN.2022.3161116.

Negative Capacitance in HfO2 Gate Stack Structures With and Without Metal Interlayer

C. GastaldiM. CavalieriA. SaeidiE. O'ConnorF. Bellando  et al.

Ieee Transactions On Electron Devices. 2022. DOI : 10.1109/TED.2022.3157579.

Label-Free C-Reactive Protein Si Nanowire FET Sensor Arrays With Super-Nernstian Back-Gate Operation

L. CapuaY. SprungerH. ElettroF. RischA. Grammoustianou  et al.

Ieee Transactions On Electron Devices. 2022. DOI : 10.1109/TED.2022.3144108.

Spike-Based Sensing and Communication for Highly Energy-Efficient Sensor Edge Nodes

F. RothN. BidoulT. RoscaM. DoerpinghausD. Flandre  et al.

2022. 2nd IEEE International Symposium on Joint Communications and Sensing (JC and S), Seefeld, AUSTRIA, Mar 09-10, 2022. DOI : 10.1109/JCS54387.2022.9743501.

Subthreshold VO2 vertical switches for large-bandwidth millimeter-wave and sub-terahertz detection

F. QaderiY. HorstT. BlatterM. BurlaD. Park  et al.

2022. 47th International Conference on Infrared, Millimeter and Terahertz Waves (IRMMW-THz), Delft, NETHERLANDS, Aug 28-Sep 02, 2022. DOI : 10.1109/IRMMW.THz50927.2022.9895513.

Multi-Gate FD-SOI Single Electron Transistor for hybrid SET-MOSFET quantum computing

F. BersanoF. De PalmaF. OppligerF. BraakmanI. Radu  et al.

2022. 48th IEEE European Solid State Circuits Conference (ESSCIRC), Milan, ITALY, 2022-09-19 - 2022-09-22. p. 49 - 52. DOI : 10.1109/ESSCIRC55480.2022.9911479.

Gate energy efficiency and negative capacitance in ferroelectric 2D/2D TFET from cryogenic to high temperatures

S. KamaeiA. SaeidiC. GastaldiT. RoscaL. Capua  et al.

Npj 2D Materials And Applications. 2021. DOI : 10.1038/s41699-021-00257-6.

Intrinsic switching in Si-doped HfO2: A study of Curie-Weiss law and its implications for negative capacitance field-effect transistor

C. GastaldiM. CavalieriA. SaeidiE. O'ConnorS. Kamaei  et al.

Applied Physics Letters. 2021. DOI : 10.1063/5.0052129.

A Wearable Low-Power Sensing Platform for Environmental and Health Monitoring: The Convergence Project

E. SaoutieffT. PolichettiL. JouanetA. FauconA. Vidal  et al.

Sensors. 2021. DOI : 10.3390/s21051802.

Sensitivity, Noise and Resolution in a B -Modified Foundry-Made ISFET with Miniaturized Reference Electrode for Wearable Point-of-Care Applications

F. BellandoL. J. MeleP. PalestriJ. ZhangM. A. Ionescu  et al.

Sensors. 2021. DOI : 10.3390/s21051779.

A hybrid III-V tunnel FET and MOSFET technology platform integrated on silicon

C. ConvertinoC. B. ZotaH. SchmidD. CaimiL. Czornomaz  et al.

Nature Electronics. 2021. DOI : 10.1038/s41928-020-00531-3.

Extended gate field-effect-transistor for sensing cortisol stress hormone

S. SheibaniL. CapuaS. KamaeiS. S. A. AkbariJ. Zhang  et al.

Communications Materials. 2021. DOI : 10.1038/s43246-020-00114-x.

High Tuning Range Spiking 1R-1T VO2 Voltage-Controlled Oscillator for Integrated RF and Optical Sensing

T. RoscaF. QaderiA. M. Ionescu

2021. IEEE 51st European Solid-State Device Research Conference (ESSDERC), ELECTR NETWORK, Sep 06-09, 2021. p. 183 - 186. DOI : 10.1109/ESSDERC53440.2021.9631804.

Networks of Coupled VO2 Oscillators for Neuromorphic Computing

E. Corti / M. A. IonescuS. Karg (Dir.)

Lausanne, EPFL, 2021. DOI : 10.5075/epfl-thesis-9303.

High Tuning Range Spiking 1R-1T VO2 Voltage-Controlled Oscillator for Integrated RF and Optical Sensing

T. RoscaF. QaderiA. M. Ionescu

2021. 47th IEEE European Solid State Circuits Conference (ESSCIRC), ELECTR NETWORK, Sep 06-09, 2021. p. 183 - 186. DOI : 10.1109/ESSCIRC53450.2021.9567761.

An Experimental Study Of The Photoresponse Of 1T-1R Oscillators Based On Vanadium Dioxide: Towards Spiking Sensing Systems

T. RoscaF. QaderiM. RiccardiO. J. F. MartinA. M. Ionescu

2021. 21st International Conference on Solid-State Sensors, Actuators and Microsystems (Transducers), ELECTR NETWORK, Jun 20-25, 2021. p. 373 - 376. DOI : 10.1109/TRANSDUCERS50396.2021.9495742.

Double-Gate Si Nanowire FET Sensor Arrays For Label-Free C-Reactive Protein detection enabled by antibodies fragments and pseudo-super-Nernstian back-gate operation

L. CapuaSprunger YannH. S. ElettroGrammoustianou AristeaMidahuen Rony  et al.

2021. 67th Annual IEEE International Electron Devices Meeting (IEDM 2021), San Francisco, CA, USA, December 11-15, 2021. DOI : 10.1109/IEDM19574.2021.9720670.

Radio Frequency Temperature Transducers Based On Insulator-Metal Phase Transition In Vo2 And Ge-Doped Vo2 Ald Thin Films

A. A. MullerR. KhadarK. M. NiangG. BaiE. Matioli  et al.

2021. 21st International Conference on Solid-State Sensors, Actuators and Microsystems (Transducers), ELECTR NETWORK, Jun 20-25, 2021. p. 1355 - 1358. DOI : 10.1109/TRANSDUCERS50396.2021.9495498.

Coupled VO2 oscillators circuit as analog first layer filter in convolutional neural networks

E. CortiJ. A. Cornejo JimenezK. NiangJ. RobertsonK. E. Moselund  et al.

Frontiers In Neuroscience. 2021. DOI : 10.3389/fnins.2021.628254.

Antibodies fragments as enablers of cardiac troponin (cTn) detection with extended gate metal-oxide-semiconductor field effect transistors (EGFET)

L. CapuaD. LoccaA. Ionescu

2020. p. 1699 - 1699.

Intrinsic or nucleation-driven switching: An insight from nanoscopic analysis of negative capacitance Hf1-xZrxO2-based structures

I. StolichnovM. CavalieriC. GastaldiM. HoffmannU. Schroeder  et al.

Applied Physics Letters. 2020. DOI : 10.1063/5.0021272.

Temperature dependence of reconfigurable bandstop filters using vanadium dioxide switches

A. MullerM. CavalieriM. A. Ionescu

Applied Physics Letters. 2020. DOI : 10.1063/5.0021942.

The 3D Smith Chart: From Theory to Experimental Reality

A. MullerV. AsaveiMoldveanu AlinE. SanabriaR. Khadar  et al.

IEEE Microwave Magazine. 2020. DOI : 10.1109/MMM.2020.3014984.

3D Smith chart constant quality factor semi-circles contours for positive and negative resistance circuits

V. AsaveiA. MullerE. Sanabria CodesalA. MoldoveanuM. A. Ionescu

IEEE Access. 2020. DOI : 10.1109/ACCESS.2020.3026917.

Corrections to “Experimental Details of a Steep-Slope Ferroelectric InGaAs Tunnel-FET With High-Quality PZT and Modeling Insights in the Transient Polarization”

A. S. VerhulstA. SaeidiI. StolichnovA. AlianH. Iwai  et al.

Ieee Transactions On Electron Devices. 2020. DOI : 10.1109/TED.2020.2995786.

Experimental Investigation of Pulsed Laser Deposition of Ferroelectric Gd:HfO2 in a CMOS BEOL Compatible Process

M. CavalieriE. O'ConnorC. GastaldiI. StolichnovA. M. Ionescu

Acs Applied Electronic Materials. 2020. DOI : 10.1021/acsaelm.0c00319.

Nanowire Tunnel FET with Simultaneously Reduced Subthermionic Subthreshold Swing and Off-Current due to Negative Capacitance and Voltage Pinning Effects

A. SaeidiT. RoscaE. MemisevicI. StolichnovM. Cavalieri  et al.

Nano Letters. 2020. DOI : 10.1021/acs.nanolett.9b05356.

WSe2/SnSe2 vdW heterojunction Tunnel FET with subthermionic characteristic and MOSFET co-integrated on same WSe2 flake

N. OlivaJ. BackmanL. CapuaM. CavalieriM. Luisier  et al.

Npj 2D Materials And Applications. 2020. DOI : 10.1038/s41699-020-0142-2.

Subthermionic negative capacitance ion sensitive field-effect transistor

F. BellandoC. K. DabhiA. SaeidiC. GastaldiY. S. Chauhan  et al.

Applied Physics Letters. 2020. DOI : 10.1063/5.0005411.

Radio-Frequency Characteristics of Ge-doped Vanadium Dioxide Thin Films with Increased Transition Temperature

A. MullerR. A. KhadarT. AbelN. NegmT. Rosca  et al.

ACS Applied Electronic Materials. 2020. DOI : 10.1021/acsaelm.0c00078.

An Experimental Study on Mixed-Dimensional 1D-2D van der Waals Single-Walled Carbon Nanotube-WSe2 Hetero-Junction

S. KamaeiA. SaeidiF. JazaeriA. RassekhN. Oliva  et al.

IEEE Electron Device Letters. 2020. DOI : 10.1109/LED.2020.2974400.

Negative Capacitance Double-Gate Junctionless FETs: A Charge-Based Modeling Investigation of Swing, Overdrive and Short Channel Effect

A. RassekhJ.-M. SalleseF. JazaeriM. FathipourA. M. Ionescu

Ieee Journal Of The Electron Devices Society. 2020. DOI : 10.1109/JEDS.2020.3020976.

Monolithically Integrated Catalyst-Free High Aspect Ratio InAs-on-Insulator (InAsOI) FinFETs for pH Sensing

M. RupakulaJ. ZhangF. BellandoF. WildhaberC. Convertino  et al.

Ieee Journal Of The Electron Devices Society. 2020. DOI : 10.1109/JEDS.2020.3008094.

At the end of scaling: 2D materials for computing and sensing applications

N. Oliva / M. A. Ionescu (Dir.)

Lausanne, EPFL, 2020. DOI : 10.5075/epfl-thesis-7695.

High-Performance III-V MOSFETs and Tunnel-FETs Integrated on Silicon

C. Convertino / M. A. IonescuK. E. Moselund (Dir.)

Lausanne, EPFL, 2020. DOI : 10.5075/epfl-thesis-8346.

InAs-on-Insulator Fin Nanostructures for Integrated Computation and Sensing Functions

M. Rupakula / M. A. Ionescu (Dir.)

Lausanne, EPFL, 2020. DOI : 10.5075/epfl-thesis-7303.

Extended Gate Field Effect Transistor Based Sensor for Detection of Trace Amounts of Anti-Depressant Drug

S. SheibaniA. M. IonescuP. Norouzi

Ieee Access. 2020. DOI : 10.1109/ACCESS.2020.3034691.

Negative capacitance semiconductor sensor

M. A. IonescuF. BellandoA. Saeidi

EP3671199 ; US11289601 ; EP3671199 ; US2020194592 . 2020.

Extended-Gate FET cortisol sensor for stress disorders based on aptamers-decorated graphene electrode: Fabrication, Experiments and Unified Analog Predictive Modeling

L. CapuaS. SheibaniS. KamaeiJ. ZhangA. M. Ionescu

2020. IEEE International Electron Devices Meeting (IEDM), ELECTR NETWORK, Dec 12-18, 2020. DOI : 10.1109/IEDM13553.2020.9372063.

Sweat monitoring with CMOS compatible technology: ISFETS and beyond

F. Bellando / M. A. Ionescu (Dir.)

Lausanne, EPFL, 2020. DOI : 10.5075/epfl-thesis-7464.

Experimental Details of a Steep-Slope Ferroelectric InGaAs Tunnel-FET With High-Quality PZT and Modeling Insights in the Transient Polarization

A. VerhulstA. SaeidiI. StolichnovA. AlianH. Iwai  et al.

IEEE Transactions on Electron Devices. 2019. DOI : 10.1109/TED.2019.2954585.

3D Smith charts scattering parameters frequency-dependent orientation analysis and complex-scalar multi-parameter characterization applied to Peano reconfigurable vanadium dioxide inductors

A. MullerA. MoldoveanuV. AsaveiR. A. KhadarE. Sanabria-Codesal  et al.

Scientific Reports. 2019. DOI : 10.1038/s41598-019-54600-5.

Detection of ultra-low protein concentrations with the simplest possible field effect transistor

Y. M. GeorgievN. PetkovR. YuA. M. NightingaleE. Buitrago  et al.

Nanotechnology. 2019. DOI : 10.1088/1361-6528/ab192c.

Hysteresis Dynamics in Double-Gated n-Type WSe2 FETs With High-k Top Gate Dielectric

N. OlivaY. Y. IlarionovE. A. CasuM. CavalieriT. Knobloch  et al.

IEEE Journal of the Electron Devices Society. 2019. DOI : 10.1109/JEDS.2019.2933745.

Sweat Biomarker Sensor Incorporating Picowatt, Three-Dimensional Extended Metal Gate Ion Sensitive Field Effect Transistors

J. ZhangM. RupakulaF. BellandoE. A. Garcia CorderoF. Wildhaber  et al.

ACS Sensors. 2019. DOI : 10.1021/acssensors.9b00597.

Negative Capacitance as Universal Digital and Analog Performance Booster for Complementary MOS Transistors

A. SaeidiF. JazaeriI. StolichnovC. C. EnzA. M. Ionescu

Scientific Reports. 2019. DOI : 10.1038/s41598-019-45628-8.

A Novel Reconfigurable CMOS Compatible Ka Band Bandstop Structure Using Split-Ring Resonators and Vanadium Dioxide (VO2) Phase Change Switches

A. MullerR. Abdul KhadarE. A. CasuA. KrammerM. Cavaleri  et al.

2019. 2019 IEEE MTT-S International Microwave Symposium (IMS), Boston, June 7-11,2019. p. 865 - 867. DOI : 10.1109/MWSYM.2019.8701121.

NanoElectronics roadmap for Europe: From nanodevices and innovative materials to system integration

J. AhopeltoG. ArdilaL. BaldiF. BalestraD. Belot  et al.

Solid-State Electronics. 2019. DOI : 10.1016/j.sse.2019.03.014.

Resistive Coupled VO2 Oscillators for Image Recognition

E. CortiK. E. MoselundB. GotsmannI. StolichnovM. A. Ionescu  et al.

2019. 2018 IEEE International Conference on Rebooting Computing (ICRC), McLean, VA, USA, 7-9 Nov. 2018. p. 195 - 201. DOI : 10.1109/ICRC.2018.8638626.

Near Hysteresis-Free Negative Capacitance InGaAs Tunnel FETs with Enhanced Digital and Analog Figures of Merit below VDD=400mV

A. SaeidiA. S. VerhulstI. StolichnovA. AlianH. Iwai  et al.

2019. IEEE International Electron Devices Meeting (IEDM). DOI : 10.1109/IEDM.2018.8614583.

Co-integrated Subthermionic 2D/2D WSe2/SnSe2 Vertical Tunnel FET and WSe2 MOSFET on same flake: towards a 2D/2D vdW Dual-Transport Steep Slope FET

N. OlivaL. CapuaM. CavalieriA. M. Ionescu

2019. 65th IEEE Annual International Electron Devices Meeting (IEDM), San Francisco, CA, Dec 09-11, 2019. DOI : 10.1109/IEDM19573.2019.8993643.

Transient Negative Capacitance of Silicon-doped HfO2 in MFMIS and MFIS structures: experimental insights for hysteresis-free steep slope NC FETs

C. GastaldiA. SaeidiM. CavalieriI. StolichnovP. Muralt  et al.

2019. 65th IEEE Annual International Electron Devices Meeting (IEDM), San Francisco, CA, Dec 09-11, 2019. DOI : 10.1109/IEDM19573.2019.8993523.

Capillary flow device for bio-fluid collection with semiconductor sensors

M. A. IonescuH. GuerinE. Garcia CorderoF. Bellando

EP3510403 ; EP3510403 ; US11389096 ; US2019246959 ; EP3510403 ; US2018070869 ; WO2018047125 . 2019.

Monolithically integrated catalyst-free High Aspect Ratio InAs-On-Insulator (InAsOI) FinFETs for pH sensing

M. RupakulaJ. ZhangF. BellandoF. WildhaberC. Convertino  et al.

2019. 49th European Solid-State Device Research Conference (ESSDERC), Cracow, POLAND, Sep 23-26, 2019. p. 106 - 109. DOI : 10.1109/ESSDERC.2019.8901739.

Wearable System for Real-Time Sensing of Biomarkers in Human Sweat

J. Zhang / M. A. IonescuM. Mazza (Dir.)

Lausanne, EPFL, 2019. DOI : 10.5075/epfl-thesis-9696.

Exploration of Negative Capacitance Devices and Technologies

A. Saeidi / M. A. Ionescu (Dir.)

Lausanne, EPFL, 2019. DOI : 10.5075/epfl-thesis-9340.

Apparatus for non-invasive sensing of biomarkers in human sweat

M. A. IonescuJ. F. LongoF. P. WildhaberH. M. GuérinF. Bellando  et al.

US11331009 ; EP3697317 ; WO2019076733 ; WO2019076733 ; US2019110722 . 2019.

Millimeter-wave-triggering of insulator-to-metal transition in Vanadium dioxide

F. QaderiA. MullerA. KrammerM. VeljoviciZ. Ollmann  et al.

2019. 44th International Conference on Infrared, Millimeter, and Terahertz Waves (IRMMW-THz), Paris, FRANCE, Sep 01-06, 2019. DOI : 10.1109/IRMMW-THz.2019.8874271.

Sensing device for sensing minor charge variations

C. AlperM. A. IonescuT. Rosca

US10818785 ; US2019172937 . 2019.

Double-gate field-effect-transistor based biosensor

H. GuerinM. Ionescu

US11467123 ; US2020284753 ; EP3679363 ; WO2019048059 . 2019.

Field-effect transistor device or sensor for sensing ions, molecules or biomarkers in a fluid

J. ZhangF. BellandoE. Garcia CorderoM. A. Ionescu

US2021270770 ; EP3811071 ; CN112567238 ; WO2019244113 . 2019.

VO2 oscillators coupling for Neuromorphic Computation

E. CortiB. GotsmannK. MoselundI. StolichnovA. Ionescu  et al.

2019. Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon (EUROSOI-ULIS), Grenoble, FRANCE, Apr 01-03, 2019. DOI : 10.1109/EUROSOI-ULIS45800.2019.9041875.

Sub-Thermionic Scalable III-V Tunnel Field-Effect Transistors Integrated on Si (100)

C. ConvertinoC. B. ZotaY. BaumgartnerP. StaudingerM. Sousa  et al.

2019. 65th IEEE Annual International Electron Devices Meeting (IEDM), San Francisco, CA, Dec 09-11, 2019. DOI : 10.1109/IEDM19573.2019.8993610.

Three-Dimensional Integrated Ultra-Low-Volume Passive Microfluidics with Ion-Sensitive Field-Effect Transistors for Multiparameter Wearable Sweat Analyzers

E. Garcia-CorderoF. BellandoJ. ZhangF. WildhaberJ. Longo  et al.

ACS Nano. 2018. DOI : 10.1021/acsnano.8b07413.

Double gate n-type WSe2 FETs with high-k top gate dielectric and enhanced electrostatic control

N. OlivaE. A. CasuM. CavalieriM. A. Ionescu

2018. 48th European Solid-State Device Research Conference - ESSDERC 2018, 3-6 Sept. 2018, Dresden, Germany. p. 114 - 117. DOI : 10.1109/ESSDERC.2018.8486867.

Gate Leakage Tunneling Impact on the InAs/GaSb Heterojunction Electron-Hole Bilayer Tunneling Field-Effect Transistor

J. L. PadillaC. Medina-BailonC. MarquezC. SampedroL. Donetti  et al.

IEEE Transactions on Electron Devices. 2018. DOI : 10.1109/TED.2018.2866123.

A Review and Mathematical Treatment of Infinity on the Smith Chart, 3D Smith Chart and Hyperbolic Smith Chart

M. Jose Perez-PenalverE. Sanabria-CodesalF. MoldoveanuA. MoldoveanuV. Asavei  et al.

Symmetry-basel. 2018. DOI : 10.3390/sym10100458.

Genuinely Ferroelectric Sub-1-Volt-Switchable Nanodomains in HfxZr(1-x)O2 Ultrathin Capacitors

I. StolichnovM. CavalieriE. CollaT. SchenkT. Mittmann  et al.

ACS Applied Materials & Interfaces. 2018. DOI : 10.1021/acsami.8b07988.

A Reconfigurable Inductor Based on Vanadium Dioxide Insulator-to-Metal Transition

E. A. CasuA. MullerM. CavalieriA. FumarolaA. M. Ionescu  et al.

Ieee Microwave And Wireless Components Letters. 2018. DOI : 10.1109/LMWC.2018.2854961.

Steep Slope Transistors for Quantum Computing

M. A. IonescuT. RoscaC. Alper

2018. IEEE 2nd Electron Devices Technology and Manufacturing Conference - EDTM 2018, Kobe, Japan, 13-16 March 2018. p. 56 - 58. DOI : 10.1109/EDTM.2018.8421422.

Low power analog frontend for ISFET sensor readout

J. ZhangF. BellandoE. A. Garcia CorderoM. Fernandez-Bolanos BadiaM. A. Ionescu  et al.

2018. 17th International Meeting on Chemical Sensors - IMCS 2018, Vienna, Austria, 2018-07-15 - 2018-07-19. DOI : 10.5162/IMCS2018/FE.1.

Design Considerations of Ferroelectric Properties for Negative Capacitance MOSFETs

A. SaeidiF. JazaeriI. StlichnovC. EnzM. A. Ionescu

2018. p. 10 - 12. DOI : 10.1109/EDTM.2018.8421443.

Effect of hysteretic and non-hysteretic negative capacitance on tunnel FETs DC performance

A. SaeidiF. JazaeriI. StolichnovG. V. LuongQ.-T. Zhao  et al.

Nanotechnology. 2018. DOI : 10.1088/1361-6528/aaa590.

MoS2/VO2 vdW heterojunction devices: Tunable rectifiers, photodiodes and field effect transistors

N. OlivaE. A. CasuC. YanA. KrammerA. Magrez  et al.

2018. IEDM, San Francisco, California, USA, December 2-6, 2017. p. 36.1.1 - 36.1.4. DOI : 10.1109/IEDM.2017.8268503.

Capillary flow device for bio-fluid collection with semiconductor sensors

M. A. IonescuH. GuerinE. Garcia CorderoF. Bellando

EP3510403 ; EP3510403 ; US11389096 ; US2019246959 ; EP3510403 ; US2018070869 ; WO2018047125 . 2018.

Tunnel fet based non-volatile memory boosted by vertical band-to-band tunneling

A. BiswasS. TomarA. M. Ionescu

US2018012659 . 2018.

CMOS 3D-Extended Metal Gate ISFETs with Near Nernstian Ion Sensitivity

J.-R. ZhangF. BellandoM. RupakulaE. G. CorderoN. Ebejer  et al.

2018. 76th Device Research Conference (DRC), Santa Barbara, CA, Jun 24-27, 2018. DOI : 10.1109/DRC.2018.8442197.

Novel Digital and Radio Frequency Electronic Functions Enabled by Steep-Slope Phase-Change Devices

E. A. Casu / M. A. IonescuM. Fernandez-Bolanos Badia (Dir.)

Lausanne, EPFL, 2018. DOI : 10.5075/epfl-thesis-8596.

Computing with Ferroelectric FETs: Devices, Models, Systems, and Applications

A. AzizE. BreyerA. ChenX. ChenS. Datta  et al.

2018. Proceedings Of The 2018 Design, Automation & Test In Europe Conference & Exhibition (Date), Dresden, GERMANY, Mar 19-23, 2018. p. 1289 - 1298. DOI : 10.23919/DATE.2018.8342213.

An Experimental Study of Heterostructure Tunnel FET Nanowire Arrays: Digital and Analog Figures of Merit from 300K to 10K

T. RoscaA. SaeidiE. Memisevic-E. WernerssonA. M. Ionescu

2018. 64th IEEE Annual International Electron Devices Meeting (IEDM), San Francisco, CA, Dec 01-05, 2018. p. 13.5.1 - 13.5.4. DOI : 10.1109/IEDM.2018.8614665.

Prospects for energy-efficient edge computing with integrated HfO2-based ferroelectric devices

I. O'ConnorM. CantanC. MarchandB. VilquinS. Slesazeck  et al.

2018. 26th IFIP/IEEE International Conference on Very Large Scale Integration (VLSI-SoC), Verona, ITALY, Oct 08-10, 2018. p. 180 - 183. DOI : 10.1109/VLSI-SoC.2018.8644809.

Near Hysteresis-Free Negative Capacitance InGaAs Tunnel FETs with Enhanced Digital and Analog Figures of Merit below V-DD=400mV

A. SaeidiA. S. VerhulstI. StolichnovA. AlianH. Iwai  et al.

2018. 64th IEEE Annual International Electron Devices Meeting (IEDM), San Francisco, CA, Dec 01-05, 2018. p. 13.4.1 - 13.4.4. DOI : 10.1109/IEDM.2018.8614583.

All CMOS Integrated 3D-Extended Metal Gate ISFETs for pH and Multi-Ion (Na+, K+, Ca2+) sensing

J. -R. ZhangM. RupakulaF. BellandoE. G. CorderoJ. Longo  et al.

2018. 64th IEEE Annual International Electron Devices Meeting (IEDM), San Francisco, CA, Dec 01-05, 2018. p. 12.1.1 - 12.1.4. DOI : 10.1109/IEDM.2018.8614668.

Negative capacitance tunnel F£Ts: Experimental demonstration of outstanding simultaneous boosting of on-current, transconductance, overdrive, and swing

A. SaeidiF. JazaeriI. StolichnovG. LuongQ. Zhao  et al.

2018. 2017 Silicon Nanoelectronics Workshop, Kyoto, Japan, June 4-5, 2017. DOI : 10.23919/SNW.2017.8242270.

Wearable System with Integrated Passive Microfluidics for Real-Time Electrolyte Sensing in Human Sweat

E. A. Garcia Cordero / M. A. Ionescu (Dir.)

Lausanne, EPFL, 2018. DOI : 10.5075/epfl-thesis-8849.

Polarity Control of Top Gated Black Phosphorous FETs by Workfunction Engineering of Pre-Patterned Au and Ag Embedded Electrodes

N. OlivaE. A. CasuW. A. VitaleI. StolichnovA. M. Ionescu

Ieee Journal Of The Electron Devices Society. 2018. DOI : 10.1109/JEDS.2018.2817289.

The Future of Electronics: Silicon to Cloud Technologies

A. M. Ionescu

2018. 20th International Conference on Transparent Optical Networks (ICTON), Bucharest, ROMANIA, Jul 01-05, 2018. DOI : 10.1109/ICTON.2018.8473849.

Embedded Passive Nano-Liter Micropump For Sweat Collection And Analysis

E. A. Garcia CorderoF. WildhaberF. BellandoJ. F. LongoM. Fernandez-Bolanos Badia  et al.

2018. 31st IEEE International Conference on Micro Electro Mechanical Systems (MEMS), Belfast, NORTH IRELAND, Jan 21-25, 2018. p. 1217 - 1220. DOI : 10.1109/MEMSYS.2018.8346782.

Lab on skin™: 3D monolithically integrated zero-energy micro/nanofludics and FD SOI ion sensitive FETs for wearable multi-sensing sweat applications

F. BellandoE. Garcia-CorderoF. WildhaberJ. LongoH. Guerin  et al.

2017. 2017 IEEE International Electron Devices Meeting - IEDM 2017, San Francisco, CA, US, December 2-6, 2017. p. 18.1.1 - 18.1.4. DOI : 10.1109/IEDM.2017.8268413.

Negative Capacitance Tunnel FETs: Experimental Demonstration of Outstanding Simultaneous Boosting of On-current, Transconductance, Overdrive, and Swing

A. SaeidiF. JazaeriI. StolichnovG. V. LuongQ.-T. Zhao  et al.

Silicon Nanoelectronic Workshop, Kyoto, Japan, June 4-5, 2017.

Negative Capacitance as Performance Booster for Tunnel FETs and MOSFETs: An Experimental Study

A. SaeidiF. JazaeriF. BellandoI. StolichnovG. V. Luong  et al.

IEEE Electron Device Letters. 2017. DOI : 10.1109/LED.2017.2734943.

Shunt capacitive switches based on VO2 metal insulator transition for RF phase shifter applications

E. A. CasuW. A. VitaleM. TamagnoneM. M. LopezN. Oliva  et al.

2017. ESSDERC 2017 - 47th IEEE European Solid-State Device Research Conference (ESSDERC), Leuven, Belgium, 11-14 September 2017. p. 232 - 235. DOI : 10.1109/ESSDERC.2017.8066634.

Benchmarking of Homojunction Strained-Si NW Tunnel FETs for Basic Analog Functions

A. BiswasG. V. LuongM. F. ChowdhuryC. AlperQ.-T. Zhao  et al.

IEEE Transactions on Electron Devices. 2017. DOI : 10.1109/TED.2017.2665527.

Complementary black phosphorous FETs by workfunction engineering of pre-patterned Au and Ag embedded electrodes

N. OlivaE. A. CasuW. A. VitaleI. StolichnovM. A. Ionescu

2017. Solid-State Device Research Conference (ESSDERC), 2017 47th European, September, 11-14, 2017. DOI : 10.1109/ESSDERC.2017.8066602.

Van der Waals MoS2/VO2 heterostructure junction with tunable rectifier behavior and efficient photoresponse

N. OlivaE. A. CasuC. YanA. KrammerT. Rosca  et al.

Scientific Reports. 2017. DOI : 10.1038/s41598-017-12950-y.

Energy efficient computing and sensing in the Zettabyte era: From silicon to the cloud

M. A. Ionescu

2017. 2017 IEEE International Electron Devices Meeting (IEDM), San Francisco, CA, USA, 2-6 Dec, 2017. p. 1.2.1 - 1.2.8. DOI : 10.1109/IEDM.2017.8268307.

Micromechanical resonators with sub-micron gaps filled with high-k dielectrics

M. d. l. C. Maqueda López / M. A. IonescuM. Fernandez-Bolanos Badia (Dir.)

Lausanne, EPFL, 2017. DOI : 10.5075/epfl-thesis-7938.

A Steep-Slope Transistor Combining Phase-Change and Band-to-Band-Tunneling to Achieve a sub-Unity Body Factor

W. A. VitaleE. A. CasuA. BiswasT. RoscaC. Alper  et al.

Scientific Reports. 2017. DOI : 10.1038/s41598-017-00359-6.

Low Impedance ALD HfO2 Partially-Filled-Gap Flexural and Bulk MEMS Resonators Piezoresistively Detected for Distributed Mass Sensing

M. M. LopezE. A. CasuM. Fernandez-BolanosA. M. Ionescu

2017. DOI : 10.3390/proceedings1040391.

Negative Capacitance Field Effect Transistors; Capacitance Matching and non-Hysteretic Operation

A. SaeidiF. JazaeriF. BellandoI. StolichnovC. Enz  et al.

2017. Solid-State Device Research Conference (ESSDERC), 2017 47th European, Leuven, Belgium, 11-14 Sept. 2017. DOI : 10.1109/ESSDERC.2017.8066596.

Negative Capacitance Tunnel FETs: Experimental Demonstration of Outstanding Simultaneous Boosting of On-current, Transconductance, Overdrive, and Swing

A. SaeidiF. JazaeriI. StolichnovG. V. LuongQ.-T. Zhao  et al.

2017. Silicon Nanoelectronic Workshop, Kyoto, Japan, June 4-5, 2017. p. 7 - 8. DOI : 10.23919/SNW.2017.8242270.

Modeling and optimization of Tunnel-FET architectures exploiting carrier gas dimensionality

C. Alper / M. A. IonescuP. Palestri (Dir.)

Lausanne, EPFL, 2017. DOI : 10.5075/epfl-thesis-7587.

Lowering motional resistance by partially HfO2 gap filling in double-ended tuning fork MEMS resonators.

M. M. LopezE. A. CasuA. M. IonescuM. Fernandez-Bolanos

2017. 2017 Joint Conference of the European Frequency and Time Forum and IEEE International Frequency Control Symposium ((EFTF/IFC), BESANÇON, France, 9-13 July 2017. p. 805 - 806. DOI : 10.1109/FCS.2017.8089040.

Low-energy biomarker detection through charge-based impedance measurements

J. ZhangM. A. IonescuM. Mazza

2016. 2016 IEEE SENSORS, Orlando, FL, USA, October 30th - November 3rd, 2016. DOI : 10.1109/ICSENS.2016.7808744.

Sub-20nm gaps in HSQ for ultra-scaled nanoelectronic devices

M. RupakulaW. A. Vitale

42nd Micro Nano Engineering, Vienna, Austria, Septemeber 19-23,2016.

Enabling High Frequency Reconfigurable Functions with Graphene

C. F. Moldovan / M. A. Ionescu (Dir.)

Lausanne, EPFL, 2016. DOI : 10.5075/epfl-thesis-6980.

Single field effect transistor capacitor-less memory device and method of operating the same

A. BiswasN. DagtekinM. A. Ionescu

US9508854 ; US2015179800 . 2016.

The Electron-Hole Bilayer TFET: Dimensionality Effects and Optimization

C. AlperP. PalestriJ. L. PadillaA. M. Ionescu

IEEE Transactions on Electron Devices. 2016. DOI : 10.1109/TED.2016.2557282.

Vertical versus lateral tunneling FET non-volatile memory cell

A. BiswasS. TomarA. M. Ionescu

2016. 2016 IEEE Silicon Nanoelectronics Workshop (SNW), Honolulu, HI, USA, 12-13 June 2016. p. 42 - 43. DOI : 10.1109/SNW.2016.7577976.

Switching Behavior Constraint in the Heterogate Electron–Hole Bilayer Tunnel FET: The Combined Interplay Between Quantum Confinement Effects and Asymmetric Configurations

J. L. PadillaC. AlperF. GamizA. M. Ionescu

IEEE Transactions on Electron Devices. 2016. DOI : 10.1109/TED.2016.2556083.

Vertical band-to-band tunneling based non-volatile memory with high-K gate stack and stable hysteresis characteristics up to 400K

A. BiswasS. TomarA. M. Ionescu

2016. 2016 74th Annual Device Research Conference (DRC), Newark, DE, USA, 19-22 June 2016. p. 1 - 2. DOI : 10.1109/DRC.2016.7548493.

Reconfigurable electronics based on metal-insulator transition : steep-slope switches and high frequency functions enabled by Vanadium Dioxide

W. A. Vitale / M. A. IonescuC. Dehollain (Dir.)

Lausanne, EPFL, 2016. DOI : 10.5075/epfl-thesis-6949.

Design and fabrication of high-k filled sub-100 nm gap resonators with embedded dielectric field effect transistor for ultra high frequency applications

E. A. CasuM. M. LopezW. A. VitaleM. Fernandez-BolanosA. M. Ionescu

2016. 2016 IEEE Silicon Nanoelectronics Workshop (SNW), Honolulu, HI, USA, 12-13 June 2016. p. 70 - 71. DOI : 10.1109/SNW.2016.7577989.

III-V Nanowire Hetero-junction Tunnel FETs integrated on Si

D. Cutaia / M. A. IonescuH. Riel (Dir.)

Lausanne, EPFL, 2016. DOI : 10.5075/epfl-thesis-7226.

Electrothermal actuation of vanadium dioxide for tunable capacitors and microwave filters with integrated microheaters

W. A. VitaleL. PetitC. F. MoldovanM. Fernández-BolañosA. Paone  et al.

Sensors and Actuators A: Physical. 2016. DOI : 10.1016/j.sna.2016.01.027.

Modeling and simulation of low power ferroelectric non-volatile memory tunnel field effect transistors using silicon-doped hafnium oxide as gate dielectric

A. SaeidiA. BiswasA. M. IonescuA. SaeidiA. Biswas  et al.

Solid-State Electronics. 2016. DOI : 10.1016/j.sse.2016.07.025.

Condition for the negative capacitance effect in metal–ferroelectric–insulator–semiconductor devices

A. RusuA. SaeidiA. M. Ionescu

Nanotechnology. 2016. DOI : 10.1088/0957-4484/27/11/115201.

Graphene Quantum Capacitors for High Frequency Tunable Analog Applications

C. F. MoldovanW. A. VitaleP. SharmaM. TamagnoneJ. R. Mosig  et al.

Nano Letters. 2016. DOI : 10.1021/acs.nanolett.5b05235.

Quantum Mechanical Confinement in the Fin Electron-Hole Bilayer Tunnel Field-Effect Transistor

J. L. PadillaC. AlperF. GamizA. M. Ionescu

IEEE Transactions on Electron Devices. 2016. DOI : 10.1109/Ted.2016.2574893.

Ultra-Low Power Ion-Sensing Smart Platform for Noninvasive Healthcare Applications

E. A. Garcia CorderoH. M. GuérinA. MuhechF. BellandoM. A. Ionescu

2016. Smart Systems Integration, Munich, Germany, March 9-10, 2016.

Double-Gate Negative-Capacitance MOSFET with PZT gate stack on Ultra-Thin Body SOI: an Experimentally Calibrated Simulation Study of Device Performance

A. SaeidiF. JazaeriI. StolichnovM. A. Ionescu

IEEE Transactions on Electron Devices. 2016. DOI : 10.1109/Ted.2016.2616035.

Investigation of the metal-insulator transition in VO2 for Electronic Switches with Sub-1mV/Decade Steep Subthreshold Slope

W. A. VitaleC. F. MoldovanA. PaoneA. SchulerA. M. Ionescu

2016. 2016 IEEE Silicon Nanoelectronics Workshop (SNW), Honolulu, HI, USA, 12-13 June 2016. p. 180 - 181. DOI : 10.1109/SNW.2016.7578041.

Tri-Band, Polarization-Independent Reflectarray at Terahertz Frequencies: Design, Fabrication, and Measurement

H. HasaniM. TamagnoneS. Capdevila CascanteC. F. MoldovanP. Maoddi  et al.

IEEE Transactions On Terahertz Science And Technology. 2016. DOI : 10.1109/Tthz.2016.2522301.

Underlap counterdoping as an efficient means to suppress lateral leakage in the electron–hole bilayer tunnel FET

C. AlperP. PalestriJ. L. PadillaM. A. Ionescu

Semiconductor Science and Technology. 2016. DOI : 10.1088/0268-1242/31/4/045001.

Near optimal graphene terahertz non-reciprocal isolator

M. TamagnoneC. MoldovanJ.-M. PoumirolA. B. KuzmenkoA. M. Ionescu  et al.

Nature Communications. 2016. DOI : 10.1038/ncomms11216.

Heterogeneous Integration of Low Power pH FinFET sensors with Passive Capillary Microfluidics and miniaturized Ag/AgCl quasi-Reference Electrode

E. A. Garcia CorderoH. M. GuérinA. MuhechF. BellandoM. A. Ionescu

2016. European Solid-State Device Research Conference (ESSDERC), Lausanne, Switzerland, September 12-15, 2016. p. 452 - 455. DOI : 10.1109/ESSDERC.2016.7599683.

Hybrid phase-change — Tunnel FET (PC-TFET) switch with subthreshold swing < 10mV/decade and sub-0.1 body factor: Digital and analog benchmarking

E. CasuW. VitaleN. OlivaT. RoscaA. Biswas  et al.

2016. 2016 IEEE International Electron Devices Meeting (IEDM), San Francisco, CA, USA, 3-7 December 2016. p. 19.3.1 - 19.3.4. DOI : 10.1109/IEDM.2016.7838452.

Assessment of Confinement-Induced Band-to-Band Tunneling Leakage in the FinEHBTFET

J. L. PadillaC. AlperF. GamizA. M. Ionescu

2016. 2nd Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon (EURSOI-ULIS), TU Wien, Inst Microelectron, Vienna, AUSTRIA, JAN 25-27, 2016. p. 20 - 23. DOI : 10.1109/ULIS.2016.7440042.

Field-enhanced design of steep-slope VO2 switches for low actuation voltage

W. A. VitaleM. TamagnoneC. F. MoldovanN. EmondE. A. Casu  et al.

2016. ESSDERC 2016 - 46th European Solid-State Device Research Conference, Lausanne, Switzerland, 12-15 September 2016. p. 352 - 355. DOI : 10.1109/ESSDERC.2016.7599659.

Band-to-band tunneling distance analysis in the heterogate electron-hole bilayer tunnel field-effect transistor

J. L. PadillaA. PalomaresC. AlperF. GamizA. M. Ionescu

Journal Of Applied Physics. 2016. DOI : 10.1063/1.4940741.

Graphene quantum capacitors for high-Q tunable LC-tanks for RF ICs

C. F. MoldovanW. A. VitaleM. TamagnoneJ. R. MosigA. M. Ionescu

2016. ESSDERC 2016 - 46th European Solid-State Device Research Conference, Lausanne, Switzerland, 12-15 September 2016. p. 345 - 348. DOI : 10.1109/ESSDERC.2016.7599657.

Solid-gap resonators based on PVDF-TrFE

M. M. LopezE. A. CasuW. A. VitaleA. M. Ionescu

2016. 2016 IEEE Silicon Nanoelectronics Workshop (SNW), Honolulu, HI, USA, 12-13 June 2016. p. 72 - 73. DOI : 10.1109/SNW.2016.7577990.

Response to Comment on Assessment of field-induced quantum confinement in heterogate germanium electron-hole bilayer tunnel field-effect transistor

J. L. Padilla de la TorreC. AlperF. GámizM. A. Ionescu

Applied Physics Letters. 2015. DOI : 10.1063/1.4905866.

Two dimensional quantum mechanical simulation of low dimensional tunneling devices

C. AlperP. PalestriL. LattanzioJ. PadillaA. Ionescu

Solid-State Electronics. 2015. DOI : 10.1016/j.sse.2015.05.030.

Performance evaluation of novel technologies for terahertz reflectarrays

M. TamagnoneS. Capdevila CascanteH. HasaniP. RomanoW. A. Vitale  et al.

2015. 2015 European Microwave Week, Paris, France, September, 6-11, 2015. p. 393 - 396. DOI : 10.1109/EuMIC.2015.7345152.

Fabrication of CMOS-compatible abrupt electronic switches based on vanadium dioxide

W. A. VitaleC. F. MoldovanA. PaoneA. SchülerA. M. Ionescu

Microelectronic Engineering. 2015. DOI : 10.1016/j.mee.2015.03.055.

Graphene negative differential resistance (GNDR) circuit with enhanced performance at room temperature

P. SharmaL. S. BernardA. BazigosA. MagrezA. M. Ionescu

2015. Device Research Conference (DRC), 2015 73rd Annual, Columbus, OH, USA, June 21-24, 2015. p. 267 - 268. DOI : 10.1109/DRC.2015.7175676.

Reversible supramolecular modification of surfaces

N. Moridi / M. A. IonescuP. Shahgaldian (Dir.)

Lausanne, EPFL, 2015. DOI : 10.5075/epfl-thesis-6861.

Spatial Variability in Large Area Single and Few-layer CVD Graphene

C. F. MoldovanK. GajewskiM. TamagnoneR. S. WeatherupH. Sugime  et al.

2015. Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon, Bologna, Italy, January 26-28, 2015.

Tunable Capacitors and Microwave Filters Based on Vanadium Dioxide Metal-Insulator Transition

W. A. VitaleM. Fernández-BolañosC. F. MoldovanA. PaoneA. Schüler  et al.

2015. 18th International Conference on Solid-State Sensors, Actuators and Microsystems Transducers 2015, Anchorage, Alaska, USA, June 21-25, 2015. p. 311 - 314. DOI : 10.1109/TRANSDUCERS.2015.7180923.

Room-Temperature Negative Differential Resistance in Graphene Field Effect Transistors: Experiments and Theory

P. SharmaL. S. BernardA. BazigosA. MagrezA. M. Ionescu

ACS Nano. 2015. DOI : 10.1021/nn5059437.

Graphene RF NEMS shunt switches for analog and digital phase shifters

C. F. MoldovanW. A. VitaleM. TamagnoneM. A. Ionescu

2015. Transducers Conference, Anchorage, Alaska, US, June, 21-25, 2015. p. 2029 - 2032. DOI : 10.1109/TRANSDUCERS.2015.7181354.

Carbon nanotube gas sensor array for multiplex analyte discrimination

H. GuerinH. Le PocheR. PohleE. BuitragoM. F.-B. Badia  et al.

Sensors And Actuators B-Chemical. 2015. DOI : 10.1016/j.snb.2014.10.117.

Large area suspended graphene for nano-mechanical devices

T. HallamC. F. MoldovanK. GajewskiA. M. IonescuG. S. Duesberg

Physica Status Solidi B-Basic Solid State Physics. 2015. DOI : 10.1002/pssb.201552269.

Compact modeling of DG-Tunnel FET for Verilog-A implementation

A. BiswasL. De MichielisA. BazigosA. M. Ionescu

2015. ESSDERC 2015 - 45th European Solid-State Device Research Conference, Graz, Austria, 14-18 September 2015. p. 40 - 43. DOI : 10.1109/ESSDERC.2015.7324708.

Design, Fabrication and Characterization of Terahertz Reflectarrays Based on a Silicon Substrate

H. HasaniM. TamagnoneS. Capdevila CascanteC. F. MoldovanM. A. Ionescu  et al.

2015. International Conference on Metamaterials, Photonic Crystals and Plasmonics, New York, US, August, 4-7, 2015.

Tunnel Field Effect Transistors : from Steep-Slope Electronic Switches to Energy Efficient Logic Applications

A. Biswas / M. A. Ionescu (Dir.)

Lausanne, EPFL, 2015. DOI : 10.5075/epfl-thesis-6802.

Fabrication process and characterization of suspended graphene membranes for RF NEMS capacitive switches

C. F. MoldovanW. A. VitaleP. SharmaL. S. BernardA. M. Ionescu

Microelectronic Engineering. 2015. DOI : 10.1016/j.mee.2015.01.032.

A capacitance-voltage model for DG-TFET

A. BiswasM. A. Ionescu

2015. IEEE Silicon Nanoelectronics Workshop, Kyoto, Japan, 14-15 June 2015. p. 1 - 2.

Graphene Negative Differential Resistance Circuit With Voltage-Tunable High Performance at Room Temperature

P. SharmaL. S. BernardA. BazigosA. MagrezA. M. Ionescu

IEEE Electron Device Letters. 2015. DOI : 10.1109/LED.2015.2445858.

Negative Differential Resistance in Top-Gated Chemical Vapor Deposition Grown Graphene Transistors

P. SharmaL. S. BernardA. BazigosA. MagrezM. A. Ionescu

2015. Graphene Conference, Bilbao, Spain, March 10-13, 2015.

CMOS-compatible abrupt switches based on VO2 metal-insulator transition

W. A. VitaleC. F. MoldovanA. PaoneA. SchuelerA. M. Ionescu

2015. Ultimate Integration on Silicon, Bologna, Italy, January 26-28, 2015. p. 53 - 56. DOI : 10.1109/ULIS.2015.7063771.

Sensing with Advanced Computing Technology: Fin Field-Effect Transistors with High-k Gate Stack on Bulk Silicon

S. RiganteP. ScarboloM. WipfR. L. StoopK. Bedner  et al.

ACS Nano. 2015. DOI : 10.1021/nn5064216.

Comment on 'Germanium electron-hole bilayer tunnel field-effect transistors with a symmetrically arranged double gale'

J. L. Padilla de la TorreC. AlperF. GámizM. A. Ionescu

Semiconductor Science and Technology. 2015. DOI : 10.1088/0268-1242/30/12/128001.

Assessment of Pseudo-Bilayer Structures in the Heterogate Germanium Electron-Hole Bilayer Tunnel Field-Effect Transistor

J. L. Padilla de la TorreC. AlperC. Medina-BailónF. GámizM. A. Ionescu

Applied Physics Letters. 2015. DOI : 10.1063/1.4923467.

Evaluation of graphene for terahertz reflectarray antennas

M. TamagnoneS. Capdevila CascanteH. HasaniC. F. MoldovanM. A. Ionescu  et al.

2015. Graphene Week 2015, Manchester, UK, June, 22-26, 2015.

Practical Applications of Tunnel Field Effect Transistors

N. Daǧtekın / M. A. Ionescu (Dir.)

Lausanne, EPFL, 2015. DOI : 10.5075/epfl-thesis-6333.

Steep-slope Metal-Insulator-Transition VO2 Switches with Temperature-Stable High ION

W. A. VitaleC. F. MoldovanM. TamagnoneA. PaoneA. Schüler  et al.

IEEE Electron Device Letters. 2015. DOI : 10.1109/LED.2015.2454535.

Impact of Asymmetric Configurations on the Heterogate Germanium Electron-Hole Bilayer Tunnel Field-Effect Transistor Including Quantum Confinement

J. L. Padilla de la TorreC. AlperA. GodoyF. GámizM. A. Ionescu

IEEE Transactions on Electron Devices. 2015. DOI : 10.1109/TED.2015.2476350.

Graphene for Nanoelectronic Applications

P. Sharma / M. A. Ionescu (Dir.)

Lausanne, EPFL, 2015. DOI : 10.5075/epfl-thesis-6886.

Fine Pitch 3D-TSV Based High Frequency Components for RF MEMS Applications

W. A. VitaleM. Fernández-BolañosR. MerkelA. EnayatiI. Ocket  et al.

2015. IEEE Electronic Components and Technology Conference, San Diego, California, USA, May 26-29, 2015. p. 585 - 590. DOI : 10.1109/ECTC.2015.7159650.

Wafer-Level Hysteresis-Free Resonant Carbon Nanotube Transistors

J. CaoS. T. BartschA. M. Ionescu

Acs Nano. 2015. DOI : 10.1021/nn506817y.

Ultra Fine-Pitch TSV Technology for Ultra-Dense High-Q RF Inductors

W. A. VitaleM. Fernández-BolañosA. KlumppJ. WeberP. Ramm  et al.

2015. 2015 Symposium on VLSI Technology, Kyoto, Japan, June 15-19, 2015. p. T52 - T53. DOI : 10.1109/VLSIT.2015.7223700.

Self-biased reconfigurable graphene stacks for terahertz plasmonics

J. S. Gomez-DiazC. MoldovanS. Capdevila CascanteJ. RomeuL. S. Bernard  et al.

Nature Communications. 2015. DOI : 10.1038/ncomms7334.

Solid-gap wine-glass mode disks VB-FET resonators applied to biomass sensing

M. M. LopezM. F.-B. BadiaW. VitaleA. M. Ionescu

Microelectronic Engineering. 2015. DOI : 10.1016/j.mee.2015.03.005.

Efficient quantum mechanical simulation of band-to-band tunneling

C. AlperP. PalestriJ. L. PadillaA. GnudiR. Grassi  et al.

2015. 2015 Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon (EUROSOI-ULIS), Bologna, Italy, 26-28 January 2015. p. 141 - 144. DOI : 10.1109/ULIS.2015.7063793.

Modeling the imaginary branch in III-V tunneling devices: Effective mass vs k.p

C. AlperM. VisciarelliP. PalestriJ. L. PadillaA. Gnudi  et al.

2015. 2015 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Washington DC, USA, 9-11 September 2015. p. 273 - 276. DOI : 10.1109/SISPAD.2015.7292312.

Electromechanical design space exploration for electrostatically actuated ohmic switches using extended parallel plate compact model

A. BazigosC. L. AyalaS. RanaD. GroggM. Fernandez-Bolaños  et al.

Solid-State Electronics. 2014. DOI : 10.1016/j.sse.2014.06.030.

High Performance, Vertically Stacked SiNW/Fin Based 3D FETs for Biosensing Applications

E. Buitrago Godinez / M. A. IonescuM. Fernandez-Bolanos Badia (Dir.)

Lausanne, EPFL, 2014. DOI : 10.5075/epfl-thesis-6258.

Gas sensing technology based on carbon nanotube arrays

H. M. Guerin / M. A. Ionescu (Dir.)

Lausanne, EPFL, 2014. DOI : 10.5075/epfl-thesis-6281.

Two Dimensional Quantum Mechanical Simulation of Low Dimensional Tunneling Devices

C. AlperP. PalestriL. LattanzioJ. L. PadillaA. M. Ionescu

2014. 44th European Solid-State Device Research Conference (ESSDERC), 44th European Solid-State Device Research Conference (ESSDERC)']. p. 186 - 189. DOI : 10.1109/ESSDERC.2014.6948791.

Investigation of Tunnel Field-Effect Transistors as a Capacitor-less Memory Cell

A. BiswasN. DagtekinW. GrabinskiA. BazigosC. L. Royer  et al.

Applied Physics Letters. 2014. DOI : 10.1063/1.4867527.

Compact Modeling of Homojunction Tunnel FETs

A. BiswasN. DagtekinC. AlperL. De MichielisA. Bazigos  et al.

2014. 21st International Conference on Mixed Design of Integrated Circuits and Systems (MIXDES)', u'21st International Conference on Mixed Design of Integrated Circuits and Systems (MIXDES). p. 54 - 57. DOI : 10.1109/MIXDES.2014.6872152.

Steep slope VO2 switches for wide-band (DC-40 GHz) reconfigurable electronics

W. A. VitaleA. PaoneM. Fernandez-BolanosA. BazigosW. Grabinski  et al.

2014. 72nd Device Research Conference, Santa Barbara, California, USA, June 22-25, 2014. p. 29 - 30. DOI : 10.1109/DRC.2014.6872284.

Electrical characterization of high performance, liquid gated vertically stacked SiNW-based 3D FET biosensors

E. BuitragoM. F.-B. BadiaY. M. GeorgievR. YuO. Lotty  et al.

Sensors And Actuators B-Chemical. 2014. DOI : 10.1016/j.snb.2014.03.099.

Analytical Compact Model in Verilog-A for Electrostatically Actuated Ohmic Switches

A. BazigosC. L. AyalaM. Fernandez-BolanosY. PuD. Grogg  et al.

IEEE Transactions on Electron Devices. 2014. DOI : 10.1109/TED.2014.2318199.

Junctionless nano-electro-mechanical resonant transistor

S. BartschM. A. Ionescu

US9397285 ; US2015137068 ; WO2013156978 ; WO2013156978 . 2014.

Technological development of high-k dielectric FinFETs for liquid environment

S. RiganteP. ScarboloD. BouvetM. WipfK. Bedner  et al.

Solid-State Electronics. 2014. DOI : 10.1016/j.sse.2014.04.012.

Investigation of Partially Gated Si Tunnel FETs for Low Power Integrated Optical Sensing

N. DagtekinA. M. Ionescu

2014. 44th European Solid-State Device Research Conference (ESSDERC)', 44th European Solid-State Device Research Conference (ESSDERC)'. p. 190 - 193. DOI : 10.1109/ESSDERC.2014.6948792.

Partially gated lateral tunnel field effect transistor for optical applications

N. DagtekinA. M. Ionescu

Applied Physics Letters. 2014. DOI : 10.1063/1.4904026.

Electron mobility extraction in triangular gate-all-around Si nanowire junctionless nMOSFETs with cross-section down to 5 nm

M. NajmzadehM. BerthomeJ.-M. SalleseW. GrabinskiA. M. Ionescu

Solid-State Electronics. 2014. DOI : 10.1016/j.sse.2014.04.007.

Junctionless Silicon Nanowire Resonator

S. T. BartschM. ArpM. A. Ionescu

IEEE Journal of the Electron Devices Society. 2014. DOI : 10.1109/JEDS.2013.2295246.

Study of Fin-Tunnel FETs with doped pocket as Capacitor-less 1T DRAM

A. BiswasM. A. Ionescu

2014. SOI-3D-Subthreshold Microelectronics Technology Unified Conference (S3S), San Francisco, California, USA, December 6-9, 2014. DOI : 10.1109/S3S.2014.7028203.

Conformal Mapping Based DC Current Model For Double Gate Tunnel FETs

A. BiswasL. De MichielisC. AlperM. A. Ionescu

2014. 15th International Conference on Ultimate Integration on Silicon (ULIS), Stockholm ,Sweden, April 7-9, 2014. p. 85 - 88. DOI : 10.1109/ULIS.2014.6813922.

High-yield, in-situ fabrication and integration of horizontal carbon nanotube arrays at the wafer scale for robust ammonia sensors

H. GuerinH. Le PocheR. PohleL. S. BernardE. Buitrago  et al.

Carbon. 2014. DOI : 10.1016/j.carbon.2014.07.009.

Wearable Sensors for medical applications

M. A. IonescuA. Bazigos

CATRENE Scientific Committee Workshop 2014, Brussels, Belgium, 2014-02-04.

Finfet with fully PH-responsive HfO2 as highly stable biochemical sensor

S. RiganteM. WipfA. BazigosK. BednerD. Bouvet  et al.

2014. 2014 IEEE 27th International Conference on Micro Electro Mechanical Systems (MEMS), San Francisco, CA, USA, 26-30 01 2014. p. 1063 - 1066. DOI : 10.1109/MEMSYS.2014.6765828.

Growth optimization of vanadium dioxide films on SiO2/Si substrates

W. A. VitaleA. PaoneC. F. MoldovanA. SchuelerM. A. Ionescu

2014. 40th Micro and Nano Engineering, Lausanne, Switzerland, September 22-26, 2014.

Measurement of biased graphene stacks at terahertz: dynamic reconfiguration and hysteresis

J. S. Gomez-DiazC. MoldovaS. CapdevillaL. S. BernardJ. Romeu  et al.

2014. 8th European Conference on Antennas and Propagation (EuCAP), The Hague, The Netherlands, April, 6-11, 2014.

Assessment of field-induced quantum confinement in heterogate germanium electron-hole bilayer tunnel field-effect transistor

J. L. PadillaC. AlperF. GamizA. M. Ionescu

Applied Physics Letters. 2014. DOI : 10.1063/1.4894088.

High-K Dielectric FinFETs on Si-Bulk for Ionic and Biological Sensing Integrated Circuits

S. Rigante / M. A. Ionescu (Dir.)

Lausanne, EPFL, 2014. DOI : 10.5075/epfl-thesis-6134.

Electromagnetic Performance of RF NEMS Graphene Capacitive Switches

P. SharmaJ. Perruisseau-CarrierC. MoldovanA. M. Ionescu

IEEE Transactions on Nanotechnology. 2014. DOI : 10.1109/TNANO.2013.2290945.

Component design and testing for a miniaturised autonomous sensor based on a nanowire materials platform

G. FagasM. NolanY. M. GeorgievR. YuO. Lotty  et al.

2014. Conference on Smart Sensors, Actuators and MEMS within the SPIE EUROPE Symposium on Microtechnologies. p. 971 - 988. DOI : 10.1007/s00542-014-2100-4.

Single Crystal Silicon UHF Wine-Glass Ring Resonator with HfO2 Solid Dielectric Gap embedded in a Field Effect Transistor

E. A. CasuS. RiganteM. Fernandez-Bolanos BadiaM. A. Ionescu

40th Micro and Nano Engineering Conference, Lausanne, CH, September 22-26, 2014.

The top-down fabrication of a 3D-integrated, fully CMOS-compatible FET biosensor based on vertically stacked SiNWs and FinFETs

E. BuitragoM. Fernández-BolañosS. RiganteC. F. ZilchN. S. Schröter  et al.

Sensors and Actuators B: Chemical. 2014. DOI : 10.1016/j.snb.2013.11.123.

1T Capacitor-less DRAM cell based on asymmetric Tunnel FET design

A. BiswasA. M. Ionescu

IEEE Journal of the Electron Devices Society. 2014. DOI : 10.1109/JEDS.2014.2382759.

Tungsten Through Silicon Vias for 3D high quality factor embedded RF MEMS inductors

W. A. VitaleM. Fernández-Bolaños BadíaR. WielandJ. WeberA. Klumpp  et al.

2013. 39th International Conference on Micro and Nano Engineering, London, UK, September 16-19, 2013.

Towards Nanomechanics and Nanoelectronics on a Single Chip

S. T. Bartsch / M. A. Ionescu (Dir.)

Lausanne, EPFL, 2013. DOI : 10.5075/epfl-thesis-5888.

Silicon nanowires reliability and robustness investigation using AFM-based techniques

T. BieniekG. JanczykP. JanusP. GrabiecM. Nieprzecki  et al.

2013. DOI : 10.1117/12.2031229.

A study on 1T Capacitor-less Tunnel FET DRAM Exploiting Ungated Body

A. BiswasN. DagtekinW. GrabinskiA. BazigosC. Le Royer  et al.

2013. ISDRS 2013, Washington DC, USA, December 11-13, 2013.

RF MEMS power sensors for ultra-low power wake-up circuit applications

W. A. VitaleM. Fernández-Bolaños BadíaA. BazigosC. DehollainA. M. Ionescu

2013. 43rd Solid-State Device Research Conference (ESSDERC), Bucharest, Romania, September 16-20, 2013. DOI : 10.1109/ESSDERC.2013.6818875.

Junctionless silicon nanowire transistors for the tunable operation of a highly sensitive, low power sensor

E. BuitragoG. FagasM. F.-B. BadiaY. M. GeorgievM. Berthomé  et al.

Sensors and Actuators B: Chemical. 2013. DOI : 10.1016/j.snb.2013.03.028.

Horizontal growth of dense carbon nanotube membranes for interconnects and sensors

H. Le PocheA. FournierJ. DijonH. OkunoH. Guerin  et al.

2013. Annual meeting of the GDR-I GNT: Graphene and Nanotubes Science and Applications, Ecully, France, January 23-27, 2012.

Tunneling and Occupancy Probabilities: How Do They Affect Tunnel-FET Behavior?

L. De MichielisL. LattanzioK. E. MoselundH. RielA. M. Ionescu

IEEE Electron Device Letters. 2013. DOI : 10.1109/LED.2013.2257665.

FinFET integrated low-power circuits for enhanced sensing applications

S. RiganteP. LiviA. RusuY. ChenA. Bazigos  et al.

Sensors and Actuators B: Chemical. 2013. DOI : 10.1016/j.snb.2013.06.031.

An innovative band-to-band tunneling analytical model and implications in compact modeling of tunneling-based devices

L. De MichielisN. DağTekinA. BiswasL. LattanzioL. Selmi  et al.

Applied Physics Letters. 2013. DOI : 10.1063/1.4821100.

Ultra low power NEMFET based logic

M. EnachescuM. LefterA. BazigosA. M. IonescuS. Dan Cotofana

2013. 2013 IEEE International Symposium on Circuits and Systems (ISCAS), Beijing, China, 19-23 05 2013. p. 566 - 569. DOI : 10.1109/ISCAS.2013.6571905.

Nanoelectromechanical microwave switch based on graphene

P. SharmaJ. Perruisseau CarrierA. M. Ionescu

2013. 2013 14th International Conference on Ultimate Integration on Silicon (ULIS), Coventry, United Kingdom, 19-21 03 2013. p. 189 - 192. DOI : 10.1109/ULIS.2013.6523516.

Tunnel FET with non-uniform gate capacitance for improved device and circuit level performance

C. AlperL. De MichielisN. DağtekinL. LattanzioD. Bouvet  et al.

Solid-State Electronics. 2013. DOI : 10.1016/j.sse.2013.02.032.

Ferroelectric tunnel fet switch and memory

M. A. Ionescu

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Sustained Nano-Mechanical Oscillation of a Resonant-Body Transistor by Frequency-Modulated Heterodyne Phase-Locked-Loop

S. T. BartschA. RusuM. A. Ionescu

2013. 2013 Symposia on VLSI Technology and Circuits (2013 Silicon Nanoelectronics Workshop), Kyoto, Japan, June 9-14, 2013.

Mobility Extraction Assessment in GAA Si NW JL FETs with Cross-Section Down to 5 nm

M. NajmzadehJ.-M. SalleseM. BerthomeW. GrabinskiA. M. Ionescu

2013. 14th International Conference on Ultimate Integration on Silicon (ULIS). p. 106 - 109. DOI : 10.1109/ULIS.2013.6523512.

Encapsulated Low Frequency Vibrating Body Field Effect Resonator

M. Hermersdorf / M. A. Ionescu (Dir.)

Lausanne, EPFL, 2013. DOI : 10.5075/epfl-thesis-5634.

High-k dielectric FinFETs towards Sensing Integrated Circuits

S. RiganteP. ScarboloD. BouvetM. WipfA. Tarasov  et al.

2013. 14th International Conference on Ultimate Integration on Silicon (ULIS). p. 73 - 76. DOI : 10.1109/ULIS.2013.6523494.

Large-scale, in-situ integration of horizontal carbon nanotube arrays into gas sensing devices

H. GuerinH. Le PocheM. Fernandez-Bolaños BadiaJ. DijonM. A. Ionescu

Micronarc Alpine Meeting, 4th edition, Villars-sur-Ollon, Switzerland, January 13-15, 2013.

Gate-all-around buckled dual Si nanowire nMOSFETs on bulk Si for transport enhancement and digital logic

M. NajmzadehY. TsuchiyaD. BouvetW. GrabinskiA. M. Ionescu

Microelectronic Engineering. 2013. DOI : 10.1016/j.mee.2013.02.003.

Innovative Tunnel Field-Effect Transistor Architectures

L. Lattanzio / M. A. Ionescu (Dir.)

Lausanne, EPFL, 2013. DOI : 10.5075/epfl-thesis-5691.

Functionalized 3D 7x20-array of vertically stacked SiNW FET for streptavidin sensing

E. BuitragoM. F.-B. BadiaY. M. GeorgievR. YuO. Lotty  et al.

2013. 2013 71st Annual Device Research Conference (DRC), Notre Dame, IN, USA, 23-26 06 2013. p. 1 - 2. DOI : 10.1109/DRC.2013.6633887.

Carbon Nanotube Precise Assembly for CMOS and NEMS Applications

J. Cao / M. A. Ionescu (Dir.)

Lausanne, EPFL, 2013. DOI : 10.5075/epfl-thesis-5651.

Quantum Mechanical Study of the Germanium Electron-Hole Bilayer Tunnel FET

C. AlperL. LattanzioL. De MichielisP. PalestriL. Selmi  et al.

IEEE Transactions on Electron Devices. 2013. DOI : 10.1109/TED.2013.2274198.

Beyond Scaling : Physics and Modeling for Pushing the Frontiers of Low-Power Devices

L. De Michielis / M. A. IonescuL. Selmi (Dir.)

Lausanne, EPFL, 2012. DOI : 10.5075/epfl-thesis-5504.

La récolte d’énergie pour les micro et nanosystèmes autonomes

D. BriandM. A. Ionescu

Journal ElectroSuisse. 2012.

Nanoelectronics: Ferroelectric devices show potential

A. M. Ionescu

Nature Nanotechnology. 2012. DOI : 10.1038/nnano.2012.10.

In-situ grown horizontal carbon nanotube membranes for sensitive & selective gas sensing

H. GuerinH. Le PocheJ. DijonM. A. Ionescu

LEA micro-engineering workshop, 11th edition, Arc-et-Senans, France, September 6-7, 2012.

Local volume depletion/accumulation in GAA Si nanowire junctionless nMOSFETs

M. NajmzadehJ.-M. SalleseM. BerthoméW. GrabinskiM. A. Ionescu

IEEE Transactions on Electron Devices. 2012. DOI : 10.1109/TED.2012.2220363.

From All-Si Nanowire TFETs Towards III-V TFETs

H. Ghoneim / M. A. IonescuH. Riel (Dir.)

Lausanne, EPFL, 2012. DOI : 10.5075/epfl-thesis-5534.

Gate-All-Around Buckled Dual Si Nanowire nMOSFETs on Bulk Si for Transport Enhancement and Digital Logic Application

M. NajmzadehY. TsuchiyaD. BouvetW. GrabinskiM. A. Ionescu

2012. 38th International Conference on Micro and Nano Engineering (MNE), Toulouse, France, September 16-20, 2012.

Non-contact characterization of graphene surface impedance at micro and millimeter waves

J. S. Gomez-DiazJ. Perruisseau-CarrierP. SharmaM. A. Ionescu

Journal of Applied Physics. 2012. DOI : 10.1063/1.4728183.

RF MEMS Shunt Capacitive Switches Using AlN Compared to Si3N4 Dielectric

M. Fernández-Bolaños BadíaE. BuitragoA. M. Ionescu

Journal of Microelectromechanical Systems. 2012. DOI : 10.1109/JMEMS.2012.2203101.

Multigate Buckled Self-Aligned Dual Si Nanowire MOSFETs on Bulk Si for High Electron Mobility

M. NajmzadehY. TsuchiyaD. BouvetW. GrabinskiM. A. Ionescu

IEEE Transactions on Nanotechnology. 2012. DOI : 10.1109/TNANO.2012.2205401.

Resonant-Body Silicon Nanowire Field Effect Transistor without Junctions

S. BartschC. DupréE. OllierM. A. Ionescu

2012. 2012 IEEE International Electron Devices Meeting IEDM, San Francisco, USA, December 10-13, 2012. p. 15.2.1 - 15.2.4. DOI : 10.1109/IEDM.2012.6479046.

On the Static and Dynamic Behavior of the Germanium Electron-Hole Bilayer Tunnel FET

L. LattanzioN. DagtekinL. De MichielisA. M. Ionescu

IEEE Transactions on Electron Devices. 2012. DOI : 10.1109/Ted.2012.2211600.

Experimental confirmation of temperature dependent negative capacitance in ferroelectric field effect transistor

G. A. SalvatoreA. RusuA. M. Ionescu

Applied Physics Letters. 2012. DOI : 10.1063/1.4704179.

Tunnel FET with non-uniform gate capacitance for improved device and circuit level performance

C. AlperL. De MichielisN. DagtekinL. LattanzioA. M. Ionescu

2012. ESSDERC 2012 - 42nd European Solid State Device Research Conference, Bordeaux, France, 17-21 09 2012. p. 161 - 164. DOI : 10.1109/ESSDERC.2012.6343358.

The electron–hole bilayer tunnel FET

L. LattanzioL. De MichielisA. M. Ionescu

Solid-State Electronics. 2012. DOI : 10.1016/j.sse.2012.04.016.

Understanding the Superlinear Onset of Tunnel-FET Output Characteristic

L. De MichielisL. LattanzioA. M. Ionescu

IEEE Electron Device Letters. 2012. DOI : 10.1109/LED.2012.2212175.

Phase-locked loop based on nanoelectromechanical resonant-body field effect transistor

S. T. BartschA. RusuM. A. Ionescu

Applied Physics Letters. 2012. DOI : 10.1063/1.4758991.

Self-Aligned Lateral Dual-Gate Suspended-Body Single-Walled Carbon Nanotube Field-Effect Transistors

J. CaoA. M. Ionescu

Applied Physics Letters. 2012. DOI : 10.1063/1.3682085.

In-situ grown horizontal carbon nanotube membrane

H. GuerinD. TsamadosH. Le PocheJ. DijonA. M. Ionescu

Microelectronic Engineering. 2012. DOI : 10.1016/j.mee.2012.05.017.

High-Q 3D Embedded Inductors using TSV for RF MEMS Tunable Bandpass Filters (4.65-6.8 GHz)

W. A. VitaleM. Fernandez-Bolanos BadiaM. A. Ionescu

2012. 42nd European Microwave Conference, Amsterdam, Netherlands. p. 822 - 825.

Streched organic transistors maintain mobility on flexible substrates

K. SidlerN. V. CvetkovicD. TsamadosA. M. IonescuJ. Brugger  et al.

Microelectronic Engineering. 2012. DOI : 10.1016/j.mee.2012.07.080.

New Tunnel-FET Architecture with Enhanced Ion and Improved Miller Effect for Energy Efficient Switching

A. BiswasC. AlperL. D. MichielisA. M. Ionescu

2012. 70th Device Research Conference, State College, PA, USA, June 18-20, 2012. p. 131 - 132. DOI : 10.1109/DRC.2012.6256999.

Nanomechanical Silicon Resonators with Intrinsic Tunable Gain and Sub-nW Power Consumption

S. T. BartschA. LoveraD. GroggA. M. Ionescu

ACS Nano. 2012. DOI : 10.1021/nn203517w.

Organic half-wave rectifier fabricated by stencil lithography on flexible substrate

N. V. CvetkovicK. SidlerV. SavuJ. BruggerD. Tsamados  et al.

Microelectronic Engineering. 2012. DOI : 10.1016/j.mee.2012.07.110.

Multi-gate Si nanowire MOSFETs : fabrication, strain engineering and transport analysis

M. Najmzadeh / M. A. Ionescu (Dir.)

Lausanne, EPFL, 2012. DOI : 10.5075/epfl-thesis-5507.

Self-Assembled Nano-Electro-Mechanical Tri-state Carbon Nanotube Switches for Reconfigurable Integrated Circuits

J. CaoW. A. VitaleA. M. Ionescu

2012. IEEE MEMS 2012, Paris, Jan. 29-Feb. 2, 2012. p. 188 - 191. DOI : 10.1109/MEMSYS.2012.6170148.

Negative Capacitance Transistor

A. Rusu / M. A. Ionescu (Dir.)

Lausanne, EPFL, 2012. DOI : 10.5075/epfl-thesis-5276.

Complementary Germanium Electron-Hole Bilayer Tunnel FET for Sub-0.5-V Operation

L. LattanzioL. De MichielisA. M. Ionescu

IEEE Electron Device Letters. 2012. DOI : 10.1109/LED.2011.2175898.

Large-Scale Assembly of Tunable Resonant-Body Carbon Nanotube Transistors without Hysteresis

J. CaoS. BartschM. A. Ionescu

2012. IEEE International Electron Devices Meeting IEDM, San Francisco, USA, Dec 10-13, 2012. p. 15.3.1 - 15.3.4. DOI : 10.1109/IEDM.2012.6479047.

Study on dual-lateral-gate suspended-body single-walled carbon nanotube field-effect transistors

J. CaoA. M. Ionescu

Solid-State Electronics. 2012. DOI : 10.1016/j.sse.2012.04.022.

Single Active Nanoelectromechanical Tuning Fork Front-End Radio-Frequency Receiver

S. BartschA. RusuM. A. Ionescu

Nanotechnology. 2012. DOI : 10.1088/0957-4484/23/22/225501.

Accumulation-mode gate-all-around Si nanowire nMOSFETs with sub-5 nm cross-section and high uniaxial tensile strain

M. NajmzadehD. BouvetW. GrabinskiJ.-M. SalleseM. A. Ionescu

2012. p. 114 - 120. DOI : 10.1016/j.sse.2012.04.021.

A Novel Extraction Method and Compact Model for the Steepness Estimation of FDSOI TFET Lateral Junction

S. S. DanA. BiswasC. L. RoyerW. GrabinskiA. M. Ionescu

IEEE Electron Device Letters. 2012. DOI : 10.1109/LED.2011.2174027.

Determination of minimum conductivity of graphene from contactless microwaves measurements

P. SharmaJ. S. Gomez-DiazM. A. IonescuJ. Perruisseau-Carrier

2012. IEEE NANO 2012 - 12th International Conference on Nanotechnology, Birmingham, UK, August, 20-23, 2012. DOI : 10.1109/NANO.2012.6322060.

Vertically stacked Si nanostructures for biosensing applications

E. BuitragoM. Fernández-BolañosA. M. Ionescu

Microelectronic Engineering. 2012. DOI : 10.1016/j.mee.2012.03.017.

Precise Alignment of Individual Carbon Nanotubes for Nanoelectronics

J. CaoA. M. Ionescu

2012. 12th IEEE International Conference on Nanotechnology (IEEE-NANO). DOI : 10.1109/NANO.2012.6322187.

TCAD Simulation of SOI TFETs and Calibration of Non-local Band-to-Band Tunneling Model

A. BiswasS. S. DanC. Le RoyerW. GrabinskiM. A. Ionescu

Microelectronic Engineering. 2012. DOI : 10.1016/j.mee.2012.07.077.

Lateral Gate Suspended-Body Carbon Nanotube Field-Effect-Transistors with Sub-100nm Air Gap by Precise Positioning Method

J. CaoA. M. Ionescu

2011. Device Research Conference (DRC 2011), Santa Barbara, USA, June 20-22, 2011.

SWNT array resonant gate MOS transistor

A. ArunS. CampidelliA. FiloramoV. DeryckeP. Salet  et al.

Nanotechnology. 2011. DOI : 10.1088/0957-4484/22/5/055204.

Integration for All Configurations

A. M. IonescuJ. DijonJ. Robertson

IEEE Microwave Magazine. 2011. DOI : 10.1109/MMM.2011.942700.

The Vibrating Body Transistor

D. GroggA. M. Ionescu

IEEE Transactions on Electron Devices. 2011. DOI : 10.1109/TED.2011.2147786.

Resist-assisted assembly of single-walled carbon nanotube devices with nanoscale precision

J. CaoC. NyffelerK. ListerA. M. Ionescu

Carbon. 2011. DOI : 10.1016/j.carbon.2011.12.006.

Scalable conformal array for multi-gigabit body centric wireless communication

A. VasylchenkoJ. F. FarserotuS. BrebelsW. De RaedtM. Fernandez-Bolanos Badia  et al.

2011. 5th International Symposium on Medical Information & Communication Technology (ISMICT), 2011, Montreux, Switzerland, March 27-30, 2011. p. 74 - 78. DOI : 10.1109/ISMICT.2011.5759800.

An Improved Precise Positioning Method for Self-Assembly of Lateral-Gate Carbon Nanotube Field-Effect-Transistors

J. CaoA. M. Ionescu

2011. MNE 11, Berlin, Germany, Sept. 19-23, 2011.

Tunnel-FET architecture with improved performance due to enhanced gate modulation of the tunneling barrier

L. De MichielisL. LattanzioP. PalestriL. SelmiA. M. Ionescu

2011. 2011 69th Annual Device Research Conference (DRC), Santa Barbara, CA, USA, June 20-22, 2011. p. 111 - 112. DOI : 10.1109/DRC.2011.5994440.

Electron-hole bilayer tunnel FET for steep subthreshold swing and improved ON current

L. LattanzioL. De MichielisA. M. Ionescu

2011. ESSDERC 2011 - 41st European Solid State Device Research Conference, Helsinki, Finland, September 12-16, 2011. p. 259 - 262. DOI : 10.1109/ESSDERC.2011.6044185.

Miniature Sensor Node with Conformal Phased Array

G. A. E. VandenboschA. VasylchenkoM. Fernandez-Bolanos BadiaS. BrebelsW. De Raedt  et al.

Radioengineering. 2011.

A tunneling field-effect transistor exploiting internally combined band-to-band and barrier tunneling mechanisms

L. LattanzioA. BiswasL. De MichielisA. M. Ionescu

Applied Physics Letters. 2011. DOI : 10.1063/1.3569760.

Tunneling path impact on semi-classical numerical simulations of TFET devices

L. De MichielisM. IellinaP. PalestriA. M. IonescuL. Selmi

2011. 2011 12th International Conference on Ultimate Integration on Silicon (ULIS), Cork, Ireland, 14-16 03 2011. p. 1 - 4. DOI : 10.1109/ULIS.2011.5758002.

Self-Aligned Double-Gate Suspended-Body Single-Walled Carbon Nanotube Field-Effect-Transistors

J. CaoA. M. Ionescu

2011. ESSDERC 11, Helsinki, Finland, Sept. 12-16, 2011. p. 315 - 318. DOI : 10.1109/ESSDERC.2011.6044171.

Carbon Nanotube Crossed Junction by Two Step Dielectrophoresis

A. ArunP. SaletA. M. Ionescu

Journal Of Nanoscience And Nanotechnology. 2011. DOI : 10.1166/jnn.2011.4116.

Self-Aligned Double-Gate Suspended-Body Carbon Nanotube Field-Effect transistors For RF Applications

J. CaoA. M. Ionescu

2011. Transducers’11, Beijing, China, June 5-9, 2011. p. 2730 - 2733. DOI : 10.1109/TRANSDUCERS.2011.5969810.

Organic Thin-Film Transistors and Circuits Fabricated by Stencil Lithography on Full-Wafer Flexible Substrates

N. Cvetkovic / M. A. IonescuD. Tsamados (Dir.)

Lausanne, EPFL, 2011. DOI : 10.5075/epfl-thesis-5102.

Effect of the choice of the tunnelling path on semi-classical numerical simulations of TFET devices

L. De MichielisM. IellinaP. PalestriA. M. IonescuL. Selmi

Solid-State Electronics. 2011. DOI : 10.1016/j.sse.2011.10.012.

Guardian Angels for a Smarter Life: Enabling a Zero-Power Technological Platform for Autonomous Smart Systems

A. M. IonescuC. Hierold

2011. 2nd European Future Technologies Conference and Exhibition (FET), Budapest, HUNGARY, May 04-06, 2011. p. 43 - 46. DOI : 10.1016/j.procs.2011.12.016.

Ultra low power: Emerging devices and their benefits for integrated circuits

A. M. IonescuL. De MichielisN. DagtekinG. SalvatoreJ. Cao  et al.

2011. 2011 IEEE International Electron Devices Meeting (IEDM), Washington, DC, USA, 5-7 December 2011. p. 16.1.1 - 16.1.4. DOI : 10.1109/IEDM.2011.6131563.

High aspect ratio sub-micron trenches on silicon-on-insulator and bulk silicon

M. HermersdorfC. HibertD. GroggA. M. Ionescu

Microelectronic Engineering. 2011. DOI : 10.1016/j.mee.2011.02.030.

RF-MEMS switches with AlN dielectric and their applications

M. Fernandez-Bolanos BadiaP. NicoleM. A. Ionescu

International Journal of Microwave and Wireless Technologies. 2011. DOI : 10.1017/S175907871100064X.

FinFET for high sensitivity ion and biological sensing applications

S. RiganteL. LattanzioA. M. Ionescu

Microelectronic Engineering. 2011. DOI : 10.1016/j.mee.2010.12.064.

Accumulation-Mode GAA Si NW nFET with sub-5 nm cross-section and high uniaxial tensile strain

M. NajmzadehD. BouvetW. GrabinskiM. A. Ionescu

2011. The 41st European Solid-State Device Research Conference (IEEE ESSDERC), Helsinki, Finland, 12-16 Sep. 2011. p. 311 - 314. DOI : 10.1109/ESSDERC.2011.6044172.

Self-Aligned Back-Gated Suspended Body Single-Walled Carbon Nanotube Field-Effect-Transistors Fabricated by High-Precision Positioning Method

J. CaoA. M. Ionescu

2011. VLSI-TSA 2011, Hsinchu, Taiwan, April 25-27, 2011.

In-IC Strategies for 3D Devices in Bulk Silicon

M. Bopp / M. A. IonescuP. Coronel (Dir.)

Lausanne, EPFL, 2011. DOI : 10.5075/epfl-thesis-4864.

Horizontally and on-site grown carbon nanotube membrane for sensitive and selective gas sensing

H. GuerinD. TsamadosH. Le PocheJ. DijonM. A. Ionescu

2011. 37th International Conference on Micro & Nano Engineering, Berlin, Germany, September 19-23, 2011.

Floating-potential self-assembly of singe-walled carbon nanotube field effect transistors by ac-dielectrophoresis

J. CaoA. ArunC. NyffelerA. M. Ionescu

Microelectronic Engineering. 2011. DOI : 10.1016/j.mee.2011.01.026.

Self-Assembly of Doubly-Clamped/Cantilevered Carbon Nanotube Arrays by a Precise Positioning Method

J. CaoA. M. Ionescu

2011. International Conference on the Science and Application of Nanotubes (NT'11), Cambridge, UK, July 11-16, 2011.

Uniaxially tensile strained accumulation-mode gate-all-around Si nanowire nMOSFETs

M. NajmzadehD. BouvetW. GrabinskiM. A. Ionescu

2011. 69th annual IEEE Device Research Conference (IEEE DRC), Santa Barbara, California, USA, 20-22 June 2011. p. 145 - 146. DOI : 10.1109/DRC.2011.5994458.

Tunnel field-effect transistors as energy-efficient electronic switches

A. M. IonescuH. Riel

Nature. 2011. DOI : 10.1038/nature10679.

Modeling the Temperature Dependence of Fe-FET Static Characteristics Based on Landau's Theory

G. A. SalvatoreL. LattanzioD. BouvetA. M. Ionescu

IEEE Transactions on Electron Devices. 2011. DOI : 10.1109/TED.2011.2160868.

Ferroelectric Field Effect Transistor for Memory and Switch Applications

G. A. Salvatore / M. A. IonescuD. Bouvet (Dir.)

Lausanne, EPFL, 2011. DOI : 10.5075/epfl-thesis-4990.

A Microfabricated 1-D Metamaterial Unit Cell Matched From DC to Millimeter-Waves

J. Perruisseau-CarrierF. BongardM. Fernandez-BolanosA. M. Ionescu

IEEE Microwave and Wireless Components Letters. 2011. DOI : 10.1109/LMWC.2011.2162617.

Integration of Engineered Source and Drain Extensions in Double Gate Mosfet with Sub-32nm Channel Length

J. Bhandari / M. A. IonescuM. Vinet (Dir.)

Lausanne, EPFL, 2011. DOI : 10.5075/epfl-thesis-4824.

Corner Effect and Local Volume Inversion in SiNW FETs

L. De MichielisK. E. MoselundL. SelmiA. M. Ionescu

Ieee Transactions On Nanotechnology. 2011. DOI : 10.1109/TNANO.2010.2080284.

Local stressors to accommodate 1.2 to 5.6 GPa uniaxial tensile stress in suspended gate-all-around Si nanowire nMOSFETs by elastic local buckling

M. NajmzadehD. BouvetW. GrabinskiM. A. Ionescu

2011. International Semiconductor Device Research Symposium (IEEE ISDRS, biennial), University of Maryland, College Park, MD, USA, December 7-9, 2011. p. 1 - 2. DOI : 10.1109/ISDRS.2011.6135148.

Floating-Potential Self-Assembly of Singe-Walled Carbon Nanotube Transistors by Ac-Dielectrophoresis

J. CaoA. M. Ionescu

2010. MNE 2010, Genoa, Italy, September 19-22, 2011.

Double-gate pentacene thin-film transistor with improved control in sub-threshold region

D. TsamadosN. V. CvetkovicK. SidlerJ. BhandariV. Savu  et al.

Solid-State Electronics. 2010. DOI : 10.1016/j.sse.2010.04.019.

Abrupt switch based on internally combined band-to-band and barrier tunneling mechanisms

L. LattanzioA. BiswasL. De MichielisA. M. Ionescu

2010. 40th European Solid-State Device Research Conference (ESSDERC)/36th European Solid-State Circuits Conference (ESSCIRC), Seville, SPAIN, Sep 14-16, 2010. p. 234 - 239. DOI : 10.1016/j.sse.2011.06.035.

Ferroelectric transistors with improved characteristics at high temperature

G. A. SalvatoreL. LattanzioD. BouvetI. StolichnovN. Setter  et al.

Applied Physics Letters. 2010. DOI : 10.1063/1.3467471.

RF NEM capacitive switch based on dense horizontal arrays of CNTs

D. AcquavivaA. ArunS. EsconjaureguiJ. CaoR. Smajda  et al.

2010. p. 143 - 144. DOI : 10.1109/DRC.2010.5551878.

Asymmetrically strained all-silicon multi-gate n-Tunnel FETs

M. NajmzadehK. BoucartW. RiessA. M. Ionescu

Solid-State Electronics. 2010. DOI : 10.1016/j.sse.2010.04.037.

Demonstrations of Wireless Autonomous Sensors for Aeronautical Applications

P. NicoleJ. J. PagazaniM. FeralP. LartiguesP. Couderc  et al.

2010. Smart System Integration (SSI), Como (Italy), March 23-24, 2010.

Active multi gate micro-electro-mechanical device with built-in transistor

M. A. IonescuD. Grogg

US8872240 ; US2011298553 ; TW201110545 ; US2010171569 ; WO2010058351 . 2010.

Simulation of Double-Gate Silicon Tunnel FETs with a High-k Gate Dielectric

K. Boucart / M. A. IonescuW. Riess (Dir.)

Lausanne, EPFL, 2010. DOI : 10.5075/epfl-thesis-4729.

Organic Thin Film Transistors on Flexible Polyimide Substrates Fabricated by Full Wafer Stencil Lithography

K. SidlerN. CvetkovicA. V. SavuD. TsamadosM. A. Ionescu  et al.

Sensors and Actuators A: Physical. 2010. DOI : 10.1016/j.sna.2010.04.016.

Metal-Ferroelectric-Metal-Oxide-Semiconductor Field Effect Transistor with Sub-60mV/decade Subthreshold Swing and Internal Voltage Amplification

A. RusuG. A. SalvatoreD. JimenezA. M. Ionescu

2010. International Electron Devices Meeting (IEDM), San Francisco, CA, Dec 06-08, 2010. p. 16.3.1 - 16.3.4. DOI : 10.1109/IEDM.2010.5703374.

Test structure and method for the experimental investigation of internal voltage amplification and surface potential of ferroelectric MOSFETs

A. RusuG. A. SalvatoreA. M. Ionescu

2010. 40th European Solid-State Device Research Conference (ESSDERC)/36th European Solid-State Circuits Conference (ESSCIRC), Seville, SPAIN, Sep 14-16, 2010. p. 151 - 156. DOI : 10.1016/j.sse.2011.06.038.

The Curie temperature as a key design parameter of ferroelectric Field Effect Transistors

G. A. SalvatoreL. LattanzioD. BouvetA. M. Ionescu

2010. ESSDERC 2010 - 40th European Solid State Device Research Conference, Sevilla, Spain, September 14-16, 2010. p. 218 - 221. DOI : 10.1109/ESSDERC.2010.5618386.

Dipole antenna and distributed MEMS phase shifter fully integrated in a single wafer process for beam steering applications

M. Fernández-BolañosA. VasylchenkoP. DainesiS. BrebelsW. De Raedt  et al.

Microelectronic Engineering. 2010. DOI : 10.1016/j.mee.2009.10.009.

Non-hysteretic ferroelectric tunnel FET with improved conductance at Curie temperature

L. LattanzioG. A. SalvatoreA. M. Ionescu

2010. 2010 68th Annual Device Research Conference (DRC), Notre Dame, IN, USA, June 21-23, 2010. p. 67 - 68. DOI : 10.1109/DRC.2010.5551937.

RF MEMS Switches for Wide-band (5 - 40 GHz), Tuneable Filters and DMTL Phase Shifters

M. Fernandez-Bolaños Badia / M. A. Ionescu (Dir.)

Lausanne, EPFL, 2010. DOI : 10.5075/epfl-thesis-4737.

Tunable band-stop filter based on single RF MEMS capacitive shunt switch with meander arm inductance

M. Fernández-BolañosC. DehollainP. NicoleA. M. Ionescu

Solid-State Electronics. 2010. DOI : 10.1016/j.sse.2010.04.030.

Silicon nanowires with lateral uniaxial tensile stress profiles for high electron mobility gate-all-around MOSFETs

M. NajmzadehL. De MichielisD. BouvetP. DobroszS. Olsen  et al.

Microelectronic Engineering. 2010. DOI : 10.1016/j.mee.2009.11.024.

Carbon nanotube vertical membranes for electrostatically actuated micro-electro-mechanical devices

A. ArunD. AcquavivaM. Fernández-BolañosP. SaletH. Le-Poche  et al.

Microelectronic Engineering. 2010. DOI : 10.1016/j.mee.2009.10.021.

An experimental investigation of the surface potential in ferroelectric P(VDF-TrFE) FETs

A. RusuG. SalvatoreA. Ionescu

2010. 35th International Conference on Micro-and Nano-Engineering, Ghent, BELGIUM, Sep 28-Oct 01, 2009. p. 1607 - 1609. DOI : 10.1016/j.mee.2009.10.047.

Wafer Level Assembly of Single-Walled Carbon Nanotube Arrays with Precise Positioning

J. CaoA. ArunK. ListerD. AcquavivaJ. Bhandari  et al.

2010. Nanotech 2010, Anaheim, CA, USA.

Active Microelectromechanical Resonator : The Vibrating Body Field Effect Transistor

D. Grogg / M. A. Ionescu (Dir.)

Lausanne, EPFL, 2010. DOI : 10.5075/epfl-thesis-4673.

Electronic devices: Nanowire transistors made easy

A. M. Ionescu

Nature Nanotechnology. 2010. DOI : 10.1038/nnano.2010.38.

Electrical modeling and design of a wafer-level package for MEM resonators

J. Perruisseau-CarrierM. MazzaA. JourdainA. K. SkrivervikA. M. Ionescu  et al.

IEEE Transactions on Advanced Packaging. 2010. DOI : 10.1109/TADVP.2010.2043101.

Vibrating Body Transistors: Enabling Fin-FET Nano-Electro-Mechanical Resonators

A. M. Ionescu

2010. 2010 IEEE International Frequency Control Symposium, New Port Beach, CA, Jun 01-04, 2010. p. 333 - 333. DOI : 10.1109/FREQ.2010.5556318.

The Hysteretic Ferroelectric Tunnel FET

A. M. IonescuL. LattanzioG. A. SalvatoreL. De MichielisK. Boucart  et al.

IEEE Transactions on Electron Devices. 2010. DOI : 10.1109/TED.2010.2079531.

Heterogeneous Integration for Novel Functionality

M. Fernandez-Bolanos BadiaM. A. Ionescu

2010. 3D System Integration Conference (3DIC), Munic, Germany, November 16-18, 2010. p. 1 - 19. DOI : 10.1109/3DIC.2010.5751423.

The high-mobility bended n-channel silicon nanowire transistor

K. E. MoselundM. NajmzadehP. DobroszS. H. OlsenD. Bouvet  et al.

IEEE Transactions on Electron Devices. 2010. DOI : 10.1109/TED.2010.2040939.

Carbon Nanotube Electromechanical Devices for Radio Frequency Applications

A. Arun / M. A. Ionescu (Dir.)

Lausanne, EPFL, 2010. DOI : 10.5075/epfl-thesis-4800.

Tunable Electromechanical Resonator Based On Carbon Nanotube Array Suspended Gate Field Effect Transistor (Cnt-Sgfet)

A. ArunM. F. GoffmanD. GroggA. FiloramoS. Campidelli  et al.

2010. 23rd IEEE International Conference on Micro Electro Mechanical Systems (MEMS 2010), Hong Kong, PEOPLES R CHINA, Jan 24-28, 2010. p. 112 - 115. DOI : 10.1109/MEMSYS.2010.5442552.

Nano-Electro-Mechanical vibrating body FET resonator for high frequency integrated oscillators

D. GroggA. LoveraA. M. Ionescu

2010. p. 183 - 184. DOI : 10.1109/DRC.2010.5551898.

Resonant-Body Fin-FETs with sub-nW power consumption

S. T. BartschD. GroggA. LoveraD. TsamadosS. Ayoez  et al.

2010. International Electron Devices Meeting (IEDM), San Francisco, CA, Dec 06-08, 2010. p. 7.6.1 - 7.6.4. DOI : 10.1109/IEDM.2010.5703318.

Tunable MEMS capacitors using vertical carbon nanotube arrays grown on metal lines

A. ArunH. L. PocheT. IddaD. AcquavivaM. Fernandez-Bolanos Badia  et al.

Nanotechnology. 2010. DOI : 10.1088/0957-4484/22/2/025203.

3D stacked arrays of fins and nanowires on bulk silicon

M. BoppP. CoronelC. HibertA. M. Ionescu

Microelectronic Engineering. 2010. DOI : 10.1016/j.mee.2009.12.036.

Three-level Stencil Alignment Fabrication of a High-k Gate Stack Organic Thin Film Transistor

N. CvetkovicK. Sidler ArnetA. V. SavuJ. BruggerD. Tsamados  et al.

36th International Conference on Micro & Nano Engineering (MNE), Genoa, Italy, September 19-22, 2010.

Nano-Electro-Mechanical Switches Based on Carbon Nanotubes Arrays

D. Acquaviva / M. A. Ionescu (Dir.)

Lausanne, EPFL, 2010. DOI : 10.5075/epfl-thesis-4774.

A quasi-analytical model for nanowire FETs with arbitrary polygonal cross section

L. De MichielisL. SelmiA. M. Ionescu

Solid-State Electronics. 2010. DOI : 10.1016/j.sse.2010.04.039.

Capacitive nanoelectromechanical switch based on suspended carbon nanotube array

D. AcquavivaA. ArunS. EsconjaureguiD. BouvetJ. Robertson  et al.

Applied Physics Letters. 2010. DOI : 10.1063/1.3525165.

Abrupt switch based on internally combined Band-To-Band and Barrier Tunneling mechanisms

L. LattanzioL. De MichielisA. BiswasA. M. Ionescu

2010. ESSDERC 2010 - 40th European Solid State Device Research Conference, Sevilla, Spain, September 14-16, 2010. p. 353 - 356. DOI : 10.1109/ESSDERC.2010.5618215.

A Study of Deterministic Positioning of Carbon Nanotubes by Dielectrophoresis

A. ArunP. SaletA. M. Ionescu

Journal of Electronic Materials. 2009. DOI : 10.1007/s11664-009-0797-0.

Investigation of bias-dependent series resistances and barrier height in Double Gate Schottky MOSFETs

J. BhandariM. VinetT. PoirouxJ.-M. SalleseB. Previtali  et al.

2009. IEEE International SOI Conference 2009, Foster City, CA, Oct 05-08, 2009. p. 131 - 132. DOI : 10.1109/SOI.2009.5318738.

9 MHz vibrating body FET tuning fork oscillator

D. GroggF. Lo ConteM. KayalA. M. Ionescu

2009. Joint Meeting of the 23rd European Frequency and Time Forum/IEEE International Frequency Control Symposium, Besancon, FRANCE, Apr 20-24, 2009. p. 520 - 523. DOI : 10.1109/FREQ.2009.5168235.

Centre frequency and bandwidth tunable bandpass filter based on RF MEMS (10-14GHz)

M. Fernández-BolañosC. DehollainS. AyozP. NicoleA. M. Ionescu

2009. 37th European Microwave Conference, Rome, ITALY, Sep 29-Oct 01, 2009. DOI : 10.23919/EUMC.2009.5296302.

Carbon Nanotubes Brush Varactor

A. ArunM. Fernandez-Bolanos BadiaP. SaletT. IddaR. Smajda  et al.

2009. 10th International Symposium of RF MEMS and RF Microsystems (MEMSWAVE), Trento, Italy, July 6-8, 2009.

Micro-Electro-Mechanical Switch Based on Suspended Horizontal Dense Mat of CNTs by FIB Nanomanipulation

D. AcquavivaA. ArunR. SmajdaD. GroggA. Magrez  et al.

2009. 23rd Eurosensors Conference, Lausanne, SWITZERLAND, Sep 06-09, 2009. p. 1411 - 1414. DOI : 10.1016/j.proche.2009.07.352.

MEMS technology for Radar front end modules.

S. B. ConstantP. NicoleL. MenagerM. LabeyrieC. Fourdin  et al.

2009. International Radar Conference - Surveillance for a Safer World, 2009. RADAR, October 12-16, 2009.

Lateral Strain Profile as Key Technology Booster for All-Silicon Tunnel FETs

K. BoucartW. RiessA. M. Ionescu

IEEE Electron Device Letters. 2009. DOI : 10.1109/LED.2009.2018127.

Small signal modeling of charge and piezoresistive modulations in active MEM resonators

D. GroggS. AyözD. TsamadosA. M. Ionescu

2009. p. 379 - 382. DOI : 10.1109/ESSDERC.2009.5331508.

High-quality factor MEMS based oscillator: Silicon 9 MHz oscillator with low phase noise and high quality factor

F. L. ConteD. GroggA. M. IonescuM. Kayal

2009. 16th International Conference Mixed Design of Integrated Circuits and Systems, Lodz, POLAND, Jun 25-27, 2009. p. 276 - 281.

Asymmetrically strained all-silicon Tunnel FETs featuring 1V operation

K. BoucartA. M. IonescuW. Riess

2009. p. 452 - 455. DOI : 10.1109/ESSDERC.2009.5331615.

Self-sustained Low Power Oscillator Based on Vibrating Body Field Effect Transistor

D. GroggS. AyoezA. M. Ionescu

2009. IEEE International Electron Devices Meeting (IEDM 2009), Baltimore, MD, Dec 07-09, 2009. p. 741 - 744. DOI : 10.1109/IEDM.2009.5424222.

Investigation of oxidation-induced strain in a top-down Si nanowire platform

M. NajmzadehD. BouvetP. DobroszO. SarahM. A. Ionescu

2009. INFOS 2009 (biennial), Cambridge, the UK, 28 June-1 July 2009.

Investigation of oxidation-induced strain in a top-down Si nanowire platform

M. NajmzadehD. BouvetP. DobroszS. OlsenA. M. Ionescu

Microelectronic Engineering. 2009. DOI : 10.1016/j.mee.2009.03.086.

An experimental study of temperature influence on electrical characteristics of ferroelectric P(VDF-TrFE) FETs on SOI

G. A. SalvatoreL. LattanzioD. BouvetA. M. Ionescu

2009. 2009 Proceedings of the European Solid State Device Research Conference (ESSDERC), Athens, Greece, 14-18 09 2009. p. 97 - 100. DOI : 10.1109/ESSDERC.2009.5331330.

Micro-electro-mechanical capacitors based on vertical carbon nanotube arrays

A. ArunD. AcquavivaM. Fernández-BolañosP. SaletH. Le-Poche  et al.

2009. p. 335 - 338. DOI : 10.1109/ESSDERC.2009.5331309.

Bulk Lateral MEM Resonator on Thin SOI With High Q-Factor

D. GroggH. C. TekinN. D. Ciressan-BadilaD. TsamadosM. Mazza  et al.

Journal of Microelectromechanical Systems. 2009. DOI : 10.1109/JMEMS.2008.2011689.

Silicon nanowires with lateral uniaxial tensile stress profiles for high electron mobility gate-all-around MOSFETs

M. NajmzadehL. De MichielisD. BouvetP. DobroszS. Olsen  et al.

2009. MNE 2009, Ghent, Belgium, 28 Sep.-1 Oct. 2009.

Nanogap MEM resonators on SOI

N.-D. Ciressan / M. A. IonescuM. Mazza (Dir.)

Lausanne, EPFL, 2009. DOI : 10.5075/epfl-thesis-4484.

Highly Tunable Band-Stop Filters Based on AIN RF MEM Capacitive Switches with Inductive Arms and Zipping Capacitive Coupling

M. Fernandez-BolanosT. LisecC. DehollainD. TsamadosP. Nicole  et al.

2009. IEEE International Electron Devices Meeting (IEDM 2009), Baltimore, MD, Dec 07-09, 2009. p. 753 - 756. DOI : 10.1109/IEDM.2009.5424217.

X-band MEMS technology for integrated Radar modules

S. B. ConstantP. NicoleM. LabeyrieC. RenardC. Fourdin  et al.

2009. p. 254 - 257.

Reliability of rf mems capacitive switches and distributed mems phase shifters using aln dielectric

M. Fernández-BolañosD. TsamadósP. DainesiA. M. Ionescu

2009. 22nd IEEE International Conference on Micro Electro Mechanical Systems (MEMS), Sorrentto, Italy, January 25-29, 2009.. p. 638 - 641. DOI : 10.1109/MEMSYS.2009.4805463.

Double-Gate Pentacene TFTs with Improved Control in Subthreshold Region

N. V. CvetkovicD. TsamadosK. SidlerJ. BhandariV. Savu  et al.

2009. 39th European Solid-State Device Research Conference (ESSDERC), Athens, Greece, September 14-18, 2009. p. 205 - 208. DOI : 10.1109/ESSDERC.2009.5331352.

Tunable band-stop filter based on single RF MEMS capacitive shunt switch with meander arm inductance

M. Fernández-BolañosC. DehollainP. NicoleA. M. Ionescu

2009. 39th European Solid-State Device Research Conference (ESSDERC), Athens, Greece, September 15-19, 2009. p. 331 - 334. DOI : 10.1109/ESSDERC.2009.5331304.

Microelectromechanical Metal-Air-Insulator-Semiconductor (MEM-MAIS) Diode: A Novel Hybrid Device for ESD Protection

D. AcquavivaD. TsamadosP. CoronelT. SkotnickiA. M. Ionescu

2009. 2009 IEEE 22nd International Conference on Micro Electro Mechanical Systems (MEMS), Sorrento, Italy, 25-29 01 2009. p. 132 - 135. DOI : 10.1109/MEMSYS.2009.4805336.

Retention in nonvolatile silicon transistors with an organic ferroelectric gate

R. GyselI. StolichnovA. K. TagantsevS. W. E. RiesterN. Setter  et al.

Applied Physics Letters. 2009. DOI : 10.1063/1.3158959.

A study of polarization effects in metal-ferroelectric-oxide-semiconductor capacitors

A. RusuG. SalvatoreA. M. Ionescu

2009. 32nd International Semiconductor Conference, Sinaia, ROMANIA, Oct 12-14, 2009. p. 517 - 520. DOI : 10.1109/SMICND.2009.5336660.

Optimization of the channel lateral strain profile for improved performance of multi-gate MOSFETs

L. De MichielisK. E. MoselundD. BouvetP. DobroszS. Olsen  et al.

2009. International Symposium on VLSI Technology, Systems and Applications, Hsinchu, TAIWAN, Apr 27-29, 2009. p. 119 - 120. DOI : 10.1109/VTSA.2009.5159319.

Sub-100μW low power operation of vibrating body FETs

D. GroggA. M. Ionescu

2009. International Symposium on VLSI Technology, Systems and Applications, Hsinchu, TAIWAN, Apr 27-29, 2009. p. 129 - 130. DOI : 10.1109/VTSA.2009.5159324.

Ad-Hoc Wireless Sensor Networks For Exploration Of Solar-System Bodies

P. DuboisC. BotteronV. MitevC. MenonP.-A. Farine  et al.

Acta Astronautica. 2009. DOI : 10.1016/j.actaastro.2008.11.012.

Ultra-Sensitive Capacitive Detection Based on SGMOSFET Compatible With Front-End CMOS Process

E. ColinetC. DurandL. DuraffourgP. AudebertG. Dumas  et al.

IEEE Journal of Solid-State Circuits. 2009. DOI : 10.1109/JSSC.2008.2007448.

Oscillator Based on Suspended Gate MOS Transistors

A. RusuM. MazzaY. S. ChauhanA. M. Ionescu

Romanian Journal Of Information Science And Technology. 2008.

3D Nanostructured Silicon Relying on Hard Mask Engineering for High Temperature Annealing (HME-HTA) Processes for Electronic Devices

M. BoppP. CoronelF. JudongK. JouannicA. Talbot  et al.

2008.

New functionality and ultra low power: key opportunities for post-CMOS era

A. M. Ionescu

2008. International Symposium on VLSI Technology, Systems and Applications, Hsinchu, TAIWAN, Apr 21-23, 2008. p. 72 - 73. DOI : 10.1109/VTSA.2008.4530804.

Finite element analysis and analytical simulations of Suspended Gate-FET for ultra-low power inverters

D. TsamadosY. Singh ChauhanC. EggimannK. AkarvardarH. S. Philip Wong  et al.

Solid-State Electronics. 2008. DOI : 10.1016/j.sse.2008.04.013.

Pentacene - SiO2 interface: Role of the environment prior to pentacene deposition and its impact on TFT DC characteristics

N. V. CvetkovicD. TsamadosK. SidlerJ. BruggerA. M. Ionescu

2008. 26th International Conference on Microelectronics (MIEL 2008), Nis, Serbia, May 11-14, 2008. DOI : 10.1109/ICMEL.2008.4559282.

DRAM Based on Hysteresis in Impact Ionization Single-Transistor-Latch

K. E. MoselundV. PottC. MeinenD. BouvetM. Kayal  et al.

2008.

SWCNT/MWCNT Crossed Junction by Two-Step Dielectrophoresis

A. ArunP. SaletA. M. Ionescu

2008.

Non-hysteretic punchthrough impact ionization MOS (PIMOS) transistor: Application to abrupt inverter and NDR circuits

V. PottK. E. MoselundA. M. Ionescu

2008. p. 310 - 313. DOI : 10.1109/ESSDERC.2008.4681760.

1T Memory Cell Based on PVDF-TrFE Field Effect Transistor

G. A. SalvatoreD. BouvetA. M. IonescuS. RiesterI. Stolichnov  et al.

2008. Material Research Society Spring meeting 2008, MRS 2008. p. 1067 - B03. DOI : 10.1557/PROC-1067-B03-02.

Editorial

A. M. IonescuL. D. Olavarrieta

Microelectronics Journal. 2008. DOI : 10.1016/j.mejo.2007.05.002.

Nano-gap high quality factor thin film SOI MEM resonators

D. GroggC. H. TekinD. N. Badila-CiressanD. TsamadosM. Mazza  et al.

2008.

Abrupt NMOS Inverter Based on Punch-Through Impact Ionization With Hysteresis in the Voltage Transfer Characteristics

K. E. MoselundD. BouvetA. M. Ionescu

IEEE Electron Device Letters. 2008. DOI : 10.1109/LED.2008.2001632.

High-Isolation Shunt-Series MEMS Switch for a Wide Frequency Range (6-40GHz)

M. Fernández-BolañosP. DainesiA. M. Ionescu

2008. 9th International Symposium of RF MEMS and RF Microsystem (MEMSWAVE), Heraklion (Greece), July 1-3, 2008.

Focussed ion beam based fabrication of micro-electro-mechanical resonators

D. GroggN. D. Badila-CiressanA. M. Ionescu

Microsystem Technologies. 2008. DOI : 10.1007/s00542-007-0464-4.

Prospects for logic-on-a-wire

K. E. MoselundD. BouvetM. H. Ben JamaaD. AtienzaY. Leblebici  et al.

Microelectronic Engineering. 2008. DOI : 10.1016/j.mee.2008.01.022.

Investigation of Strain Profile Optimization in Gate-All-Around Suspended Silicon Nanowire FET

M. NajmzadehK. E. MoselundP. DobroszS. OlsenA. ONeill  et al.

2008. IEEE ESSDERC 2008, Edinburgh, Scotland, Sep. 15-19, 2008.

Punch-through impact ionization MOSFET (PIMOS): From device principle to applications

K. E. MoselundD. BouvetV. PottC. MeinenM. Kayal  et al.

Solid-State Electronics. 2008. DOI : 10.1016/j.sse.2008.04.021.

Hysteretic inverter-on-a-body-tied-wire based on less-than-10mV/decade abrupt punch-through impact ionization MOS (PIMOS) switch

K. E. MoselundV. PottD. BouvetA. M. Ionescu

2008. p. 22 - 23. DOI : 10.1109/VTSA.2008.4530780.

NANOSIL network of excellence--silicon-based nanostructures and nanodevices for long-term nanoelectronics applications

F. BalestraE. ParkerD. LeadleyS. MantlE. Dubois  et al.

Materials Science in Semiconductor Processing. 2008. DOI : 10.1016/j.mssp.2008.09.017.

Low voltage Ferroelectric FET with sub-100nm copolymer P(VDF-TrFE) gate dielectric for non-volatile 1T memory

G. A. SalvatoreD. BouvetI. StolitchnovN. SetterA. M. Ionescu

2008. p. 162 - 165. DOI : 10.1109/ESSDERC.2008.4681724.

Micro-Electro-Mechanical Metal-Air-Insulator-Semiconductor Diode Switch

D. AcquavivaD. BouvetD. TsamadosP. CoronelT. Skotnicki  et al.

2008. 34th International Conference on Micro- and Nano-Engineering, Athens, GREECE, Sep 15-18, 2008. p. 1074 - 1077. DOI : 10.1016/j.mee.2009.02.007.

Thermally Stable Distributed MEMS Phase Shifter for Airborne and Space Applications

M. Fernandez-BolanosT. LisecP. DainesiA. M. Ionescu

2008. 38th European Microwave Conference, Amsterdam, The Netherlands, November 28-31, 2008. p. 100 - 103. DOI : 10.1109/EUMC.2008.4751397.

Double gate movable body Micro-Electro-Mechanical FET as hysteretic switch: Application to data transmission systems

D. GroggC. MeinenD. TsamadosH. C. TekinM. Kayal  et al.

2008. p. 302 - 305. DOI : 10.1109/ESSDERC.2008.4681758.

Fabrication of MEMS Resonators in Thin SOI

D. GroggN. D. Badila-CiressanA. M. Ionescu

2008.

Oxide charging and memory effects in suspended-gate FET

D. MolineroN. AbeleL. CastanerA. M. Ionescu

2008. p. 685 - 688. DOI : 10.1109/MEMSYS.2008.4443749.

Trapping Individual Carbon Nanotubes

A. ArunP. SaletA. M. Ionescu

2008.

Study of n- and p-type dopants activation and dopants behavior with respect to annealing conditions in silicon germanium-on-insulator (SGOI)

J. BhandariM. VinetT. PoirouxB. PrevitaliB. Vincent  et al.

Materials Science and Engineering: B. 2008. DOI : 10.1016/j.mseb.2008.10.023.

0-level Vacuum Packaging RT Process for MEMS Resonators

N. AbeléD. GroggC. HibertF. CassetP. Ancey  et al.

2008.

Compact Modeling of Suspended Gate FET

Y. S. ChauhanD. TsamadosN. AbeleC. EggimannM. Declercq  et al.

2008. p. 119 - 124. DOI : 10.1109/VLSI.2008.11.

In-Plane Silicon-On-Nothing Nanometer-Scale Resonant Suspended Gate MOSFET for In-IC Integration Perspectives

C. DurandF. CassetP. RenauxN. AbeleB. Legrand  et al.

IEEE Electron Device Letters. 2008. DOI : 10.1109/LED.2008.919781.

Multi-gate vibrating-body field effect transistor (VB-FETs)

D. GroggM. MazzaD. TsamadosA. M. Ionescu

2008. p. 1 - 4. DOI : 10.1109/IEDM.2008.4796781.

RF MEMS capacitive switch on semi-suspended CPW using low-loss high-resistivity silicon substrate

M. Fernández-BolañosJ. Perruisseau-CarrierP. DainesiA. M. Ionescu

Microelectronic Engineering. 2008. DOI : 10.1016/j.mee.2008.01.093.

Fabrication and Characterization of Gate-All-Around Silicon Nanowires on Bulk Silicon

V. PottK. E. MoselundD. BouvetL. De MichielisA. M. Ionescu

IEEE Transactions on Nanotechnology. 2008. DOI : 10.1109/TNANO.2008.2007215.

Nano-gap micro-electro-mechanical bulk lateral resonators with high quality factors and low motional resistances on thin silicon-on-insulator

N. D. Badila-CiressanM. MazzaD. GroggA. M. Ionescu

Solid-State Electronics. 2008. DOI : 10.1016/j.sse.2008.04.022.

Variability-Aware Design of Multilevel Logic Decoders for Nanoscale Crossbar Memories

H. Ben JamaaK. E. MoselundD. AtienzaD. BouvetA. M. Ionescu  et al.

IEEE Transactions on Computer-Aided Design of Integrated Circuits and Systems. 2008. DOI : 10.1109/TCAD.2008.2006076.

Demonstration of subthrehold swing smaller than 60mV/decade in Fe-FET with P(VDF-TrFE)/SiO₂ gate stack

G. A. SalvatoreD. BouvetA. M. Ionescu

2008. p. 1 - 4. DOI : 10.1109/IEDM.2008.4796642.

Laterally vibrating-body double gate MOSFET with improved signal detection

D. GroggH. C. TekinN. D. Badila-CiressanM. MazzaD. Tsamados  et al.

2008. p. 155 - 156. DOI : 10.1109/DRC.2008.4800781.

A new definition of threshold voltage in Tunnel FETs

K. BoucartA. M. Ionescu

Solid-State Electronics. 2008. DOI : 10.1016/j.sse.2008.04.003.

Impact of lateral non-uniform doping and hot carrier degradation on capacitance behavior of high voltage MOSFETs

Y. S. ChauhanR. GillonM. DeclercqA. M. Ionescu

2008. 37th European Solid-State Device Research Conference, Munich, GERMANY, Sep 11-13, 2007. p. 426 - 429. DOI : 10.1109/ESSDERC.2007.4430969.

Nanoscale strain characterisation for ultimate CMOS and beyond

S. H. OlsenP. DobroszR. M. B. AgaibyY. L. TsangO. Alatise  et al.

2008. International Symposium on Beyond Silicon Technology held at the 2008 EMRS Spring Meeting, Strasbourg, FRANCE, May 26-30, 2008. p. 271 - 278. DOI : 10.1016/j.mssp.2009.06.003.

Three-dimensional electronic devices fabricated on a top-down silicon nanowire platform

K. E. Moselund / M. A. Ionescu (Dir.)

Lausanne, EPFL, 2008. DOI : 10.5075/epfl-thesis-4068.

Impact of Lateral Nonuniform Doping and Hot Carrier Injection on Capacitance Behavior of High Voltage MOSFETs

Y. S. ChauhanR. GillonM. DeclercqA. M. Ionescu

Iete Technical Review. 2008. DOI : 10.4103/0256-4602.44655.

Analytical Modeling of the Suspended-Gate FET and Design Insights for Low-Power Logic

K. AkarvardarC. EggimannD. TsamadosY. Singh ChauhanG. C. Wan  et al.

IEEE Transactions on Electron Devices. 2008. DOI : 10.1109/TED.2007.911070.

Silicon nanostructuring for 3D bulk silicon versatile devices

M. BoppP. CoronelJ. BustosC. PribatP. Dainesi  et al.

2008. 34th International Conference on Micro- and Nano-Engineering, Athens, GREECE, Sep 15-18, 2008. DOI : 10.1016/j.mee.2008.12.083.

Compact Modeling of Lateral Nonuniform Doping in High-Voltage MOSFETs

Y. S. ChauhanF. KrummenacherR. GillonB. BakerootM. J. Declercq  et al.

IEEE Transactions on Electron Devices. 2007. DOI : 10.1109/TED.2007.896597.

Fault-tolerant multi-level logic decoder for nanoscale crossbar memory arrays

M. H. B. JamaaD. AtienzaG. De MicheliK. E. MoselundD. Bouvet  et al.

2007. IEEE/ACM International Conference on Computer-Aided Design, San Jose, California, USA, November 4-8. p. 765 - 772. DOI : 10.1109/ICCAD.2007.4397358.

Integration of MOSFET transistors in MEMS resonators for improved output detection

D. GroggD. TsamadosN. D. BadilaA. M. Ionescu

2007. 14th International Conference on Solid-State Sensors, Actuators and Microsystems, Lyon, FRANCE, Jun 10-14, 2007. p. 1709 - 1712. DOI : 10.1109/SENSOR.2007.4300481.

Bended gate-all-around nanowire MOSFET: a device with enhanced carrier mobility due to oxidation-induced tensile stress

K. E. MoselundP. DobroszS. OlsenV. PottL. De Michielis  et al.

2007. IEEE International Electron Devices Meeting, Washington, DC, Dec 10-12, 2007. p. 191 - 194. DOI : 10.1109/IEDM.2007.4418899.

Fabrication of silicon-on-insulator MEM resonators with deep sub-micron transduction gaps

N. D. B. CiressanC. HibertM. MazzaA. M. Ionescu

Microsystem Technologies. 2007. DOI : 10.1007/s00542-006-0349-y.

Design and fabrication of suspended-gate MOSFETs for MEMS resonator, switch and memory applications

N. Abelé / M. A. IonescuP. Ancey (Dir.)

Lausanne, EPFL, 2007. DOI : 10.5075/epfl-thesis-3838.

A New Charge based Compact Model for Lateral Asymmetric MOSFET and its application to High Voltage MOSFET Modeling

Y. ChauhanF. KrummenacherR. GillonB. BakerootM. Declercq  et al.

2007. 20th International Conference on VLSI Design held jointly with 6th International Conference on Embedded Systems (VLSID'07), Bangalore, India, 6-10 01 2007. p. 177 - 182. DOI : 10.1109/VLSID.2007.15.

Abrupt current switching due to impact ionization effects in Omega-MOSFET on low doped bulk silicon

K. E. MoselundV. PottD. BouvetA. M. Ionescu

2007. 37th European Solid-State Device Research Conference, Munich, GERMANY, Sep 11-13, 2007. p. 287 - 290. DOI : 10.1109/ESSDERC.2007.4430934.

Threshold voltage in Tunnel FETs: physical definition, extraction, scaling and impact on IC design

K. BoucartA. M. Ionescu

2007. 37th European Solid-State Device Research Conference, Munich, GERMANY, Sep 11-13, 2007. p. 299 - 302. DOI : 10.1109/ESSDERC.2007.4430937.

Double-Gate Tunnel FET With High-k Gate Dielectric

K. BoucartA. M. Ionescu

IEEE Transactions on Electron Devices. 2007. DOI : 10.1109/TED.2007.899389.

Ultra-thin nanograin polysilicon devices for hybrid CMOS-NANO integrated circuits

S. Ecoffey / M. A. IonescuD. Bouvet (Dir.)

Lausanne, EPFL, 2007. DOI : 10.5075/epfl-thesis-3722.

Length scaling of the Double Gate Tunnel FET with a high-K gate dielectric

K. BoucartA. Ionescu

Solid-State Electronics. 2007. DOI : 10.1016/j.sse.2007.09.014.

Fabrication of Silicon-On-Insulator MEM Resonators with Deep Sub-Micron Transduction Gaps

N.-D. BadilaC. HibertM. MazzaA. M. Ionescu

2007. 2006 Symposium on Design, Test, Integration and Packaging of MEMS / MOEMS, DTIP 2006, Stresa, Italy, April 2006. p. 1489 - 1493. DOI : 10.1007/s00542-006-0349-y.

High Quality Factor Copper Inductors Integrated in Deep Dry Etched Quartz Substrates

C. LeroyM. B. PisaniC. HibertD. BouvetM. Puech  et al.

2007. 2006 Symposium on Design, Test, Integration and Packaging of MEMS / MOEMS, DTIP 2006, Stresa, Italy, April 2006. p. 1483 - 1487. DOI : 10.1007/s00542-006-0364-z.

Fragmented Membrane MEM Bulk Lateral Resonators with nano-gaps on 1.5 mu m SOI

N. D. Badila-CiressanM. MazzaD. GroggA. M. Ionescu

2007. 37th European Solid-State Device Research Conference, Munich, GERMANY, Sep 11-13, 2007. p. 430 - 433. DOI : 10.1109/ESSDERC.2007.4430970.

Capacités variables et inductances MEMS RF pour une intégration "Above-IC"

A. Mehdaoui / M. A. IonescuP. Ancey (Dir.)

Lausanne, EPFL, 2007. DOI : 10.5075/epfl-thesis-3790.

High quality factor copper inductors integrated in deep dry-etched quartz substrates

C. LeroyM. B. PisaniC. HibertD. BouvetM. Puech  et al.

2007. Symposium on Design, Test, Integration and Packaging of MEMS/MOEMS, Stresa, ITALY, Apr 26-28, 2006. p. 1483 - 1487. DOI : 10.1007/s00542-006-0364-z.

An EKV-based high voltage MOSFET model with improved mobility and drift model

Y. ChauhanR. GillonB. BakerootF. KrummenacherM. Declercq  et al.

Solid-State Electronics. 2007. DOI : 10.1016/j.sse.2007.09.024.

Above-IC RF MEMS devices for communication applications

R. Fritschi / M. A. IonescuP. Flückiger (Dir.)

Lausanne, EPFL, 2007. DOI : 10.5075/epfl-thesis-3778.

Gate-all-around silicon nanowires for hybrid single electron transistor/CMOS applications

V. Pott / M. A. Ionescu (Dir.)

Lausanne, EPFL, 2007. DOI : 10.5075/epfl-thesis-3983.

Analytical Modeling of the Suspended-Gate FET and Design Insights for Digital Logic

K. AkarvardarC. EggimannD. TsamadosY. ChauhanG. C. Wan  et al.

2007. 2007 65th Annual Device Research Conference, South Bend, IN, USA, 18-20 06 2007. p. 103 - 104. DOI : 10.1109/DRC.2007.4373670.

Charge carriers photogeneration in pentacene field effect transistors

R. PlugaruC. AnghelA. M. Ionescu

Romanian Journal Of Information Science And Technology. 2007.

Copper / low-k technological platform for the fabrication of high quality factor above-IC passive devices

M. B. Pisani / M. A. IonescuC. Hibert (Dir.)

Lausanne, EPFL, 2007. DOI : 10.5075/epfl-thesis-3831.

Numerical and analytical simulations of Suspended Gate - FET for ultra-low power inverters

D. TsamadosY. S. ChauhanC. EggimannK. AkarvardarH. S. P. Wong  et al.

2007. 37th European Solid-State Device Research Conference, Munich, GERMANY, Sep 11-13, 2007. p. 167 - 170. DOI : 10.1109/ESSDERC.2007.4430905.

Small slope micro/nano-electronic switches

A. M. IonescuK. BoucartK. E. MoselundV. PottD. Tsamados

2007. International Semiconductor Conference, Sinaia, ROMANIA, Oct 15-17, 2007. p. 397 - 402. DOI : 10.1109/SMICND.2007.4519743.

MEMS Tunable Capacitor with Fragmented Electrodes and Rotational Electro-Thermal Drive

A. MehdaouiM. B. PisaniD. TsamadosF. CassetP. Ancey  et al.

2007. 2006 Symposium on Design, Test, Integration and Packaging of MEMS / MOEMS, DTIP 2006, Stresa, Italy, April 2006. p. 1589 - 1594. DOI : 10.1007/s00542-006-0350-5.

Cointegration of Gate-All-Around MOSFETs and Local Silicon-on-Insulator Optical Waveguides on Bulk Silicon

K. E. MoselundD. BouvetL. TschuorV. PottP. Dainesi  et al.

IEEE Transactions On Nanotechnology. 2007. DOI : 10.1109/TNANO.2006.886748.

Hybrid Nanowire-MOS circuit architectures: from basic physics to digital and analog applications

S. EcoffeyV. PottS. MahapatraD. BouvetA. M. Ionescu

2006.

Capacitive pressure microsensor fabricated by bulk micromachining and sacricial layer etching

A. LuqueR. G. BoleaM. Fernandez-Bolanos BadiaM. A. IonescuJ. M. Quero

2006. 32nd Annual Conference of the IEEE Industrial Electronics Society, IECON 06, Paris, France, November 9-11, 2006. p. 2969 - 2974. DOI : 10.1109/IECON.2006.348052.

A new charge-based Compact Model for Lateral Asymmetric MOSFET

Y. S. ChauhanF. KrummenacherC. AnghelR. GillonB. Bakeroot  et al.

2006.

Analysis and Modeling of Lateral Non-Uniform Doping in High-Voltage MOSFETs

Y. S. ChauhanF. KrummenacherC. AnghelR. GillonB. Bakeroot  et al.

2006. DOI : 10.1109/IEDM.2006.347000.

A Compact DC and AC Model for Circuit Simulation of High Voltage VDMOS Transistor

Y. S. ChauhanC. AnghelF. KrummenacherR. GillonA. Baguenier  et al.

2006. DOI : 10.1109/ISQED.2006.7.

Hybrid CMOS - Single Electron Transistor Circuits: Promise or Dream

A. M. Ionescu

2006.

Vertical co-integration of AlSi MEMS tunable capacitors and Cu inductors for tunable LC blocks

A. MehdaouiM. B. PisaniR. FritschiP. AnceyA. M. Ionescu

2006.

Experimental study of the process dependence of Mo, Cr, Ti, and W silicon Schottky diodes and contact resistance

K. E. MoselundJ. E. FreiermuthP. DainesiA. M. Ionescu

IEEE Transactions on Electron Devices. 2006. DOI : 10.1109/TED.2006.870574.

MEMS Capacitive Pressure Sensor Based on Polysilicon Sealed Membrane

M. Fernández-BolañosP. DainesiA. LuqueJ. M. QueroA. M. Ionescu

2006. 20th Eurosensors, Gothenburg, Sweden, September 17-20, 2006. p. 456 - 457.

Nano-scale ICT devices and systems

A. M. Ionescu

2006.

A New Charge based EKV Compact Model for Lateral Asymmetric MOSFET

Y. S. ChauhanF. KrummenacherC. AnghelA. M. IonescuM. Declercq

2006.

Local volume inversion and corner effects in triangular gate-all-around MOSFETs

K. E. MoselundD. BouvetL. TschuorV. PottP. Dainesi  et al.

2006. ESSDERC 2006. p. 359 - 362. DOI : 10.1109/ESSDER.2006.307712..

Low temperature single electron characteristics in gate-all-around MOSFET

V. PottD. BouvetJ. BoucartL. TschuorK. E. Moselund  et al.

2006. p. 427 - 430. DOI : 10.1109/ESSDER.2006.307729.

Coulomb blockade in gate-all-around silicon nanowire MOSFETs

V. PottJ. BoucartD. BouvetK. E. MoselundA. M. Ionescu

2006. p. 25 - 26.

Double gate tunnel FET with ultrathin silicon body and high-k dielectric

K. BoucartA. M. Ionescu

2006. ESSDERC 2006. p. 383 - 386. DOI : 10.1109/ESSDER.2006.307718.

MEMS Tunable Capacitor with laterally driven fragmented electrodes and electro-thermal actuation

A. MehdaouiD. TsamadosF. CassetA. M. IonescuP. Ancey

2006.

Co-integration of gate-all-around MOSFETs and local silicon-on insulator optical waveguides on bulk silicon for GHz on-chip optical signaling

K. E. MoselundL. TschuorD. BouvetV. PottP. Dainesi  et al.

2006. p. 31 - 32.

Gate-all-around MOSFETs: true fabrication and characteristics

V. PottD. BouvetK. E. MoselundA. M. Ionescu

2006.

Fast and Efficient Light Intensity Modulation in SOI with Gate-All-Around Transistor Phase Modulator

P. DainesiK. E. MoselundL. ThévenazA. M. Ionescu

2006. 2005 Conference on Lasers and Electro-Optics (CLEO), Baltimore, USA, 2005. p. 110 - 112. DOI : 10.1109/CLEO.2005.201693.

Ultra-low voltage MEMS resonator based on RSG-MOSFET

N. AbeléK. SéguéniK. BoucartF. CassetL. Buchaillot  et al.

2006. p. 882 - 885. DOI : 10.1109/MEMSYS.2006.1627941.

Compact gate-all-around silicon light modulator for ultra high speed operation

K. E. MoselundP. DainesiM. DeclercqM. BoppP. Coronel  et al.

Sensors and Actuators A: Physical. 2006. DOI : 10.1016/j.sna.2006.01.024.

Pentacene organic MOSFETs with Au and Pt bottom contacts

C. AnghelM. ManolescuA. M. Ionescu

2006. p. 301 - 304. DOI : 10.1109/SMICND.2006.284003.

A Highly Scalable High Voltage MOSFET Model

Y. S. ChauhanC. AnghelF. KrummenacherR. GillonS. Frere  et al.

2006. ESSDERC 2006, Montreux, Switzerland, 19-21 September 2006. p. 270 - 273. DOI : 10.1109/ESSDER.2006.307690.

Conduction in ultra-thin SOI nanowires prototyped by FIB milling

V. PottA. M. Ionescu

Microelectronic Engineering. 2006. DOI : 10.1016/j.mee.2006.01.116.

New Method for Threshold Voltage Extraction of High Voltage MOSFETs based on Gate-to-Drain Capacitance Measurement

C. AnghelB. BakerootY. S. ChauhanR. GillonC. Maier  et al.

IEEE Electron Device Letters. 2006. DOI : 10.1109/LED.2006.877275.

Electrical conduction in 10 nm thin polysilicon wires from 4 to 400 K and their operation for hybrid memory

S. EcoffeyD. BouvetS. MahapatraG. ReimboldA. M. Ionescu

Japanese Journal of Applied Physics. 2006. DOI : 10.1143/JJAP.45.5461.

Polyimide sacrificial layer for SOI SG-MOSFET pressure sensor

M. Fernández-BolañosN. AbeléV. PottD. BouvetG. A. Racine  et al.

Microelectronic Engineering. 2006. DOI : 10.1016/j.mee.2005.12.021.

Silicon nanowires patterning by sidewall and nano-oxidation processing

V. PottD. GroggJ. BruggerA. M. Ionescu

2005.

Light phase modulator

K. MoselundP. DainesiM. A. Ionescu

US2008030838 ; WO2005096076 . 2005.

Electrical conduction in 10nm-thin polysilicon wires from 4K to 400K and their operation for hybrid memory

S. EcoffeyD. BouvetG. ReimboldA. M. Ionescu

2005.

Fabrication of polysilicon gated-nanowires and their application for pA precision current measurements

S. EcoffeyV. PottD. BouvetY. LeblebiciM. J. Declercq  et al.

2005. 13th International Conference on Solid-State Sensors, Actuators and Microsystems (TRANSDUCERS '05), Seoul, Korea, June 5-9. p. 859 - 862. DOI : 10.1109/SENSOR.2005.1496553.

Conduction in ultra-thin SOI nanowires prototyped by FIB milling

V. PottA. M. Ionescu

2005.

Tunable Oscillating CMOS Pixel for Subretinal Implants

M. MazzaP. RenaudD. BertrandA. M. Ionescu

2005. IEEE Sensors 2005. DOI : 10.1109/ICSENS.2005.1597827.

Realization of Multiple Valued Logic and Memory by Hybrid SETMOS Architecture

S. MahapatraA. M. Ionescu

IEEE Transactions on Nanotechnology. 2005. DOI : 10.1109/TNANO.2005.858602.

Electrical characterization and modelling of lateral DMOS transistor : investigation of capacitances and hot-carrier impact

N. Hefyene / M. A. Ionescu (Dir.)

Lausanne, EPFL, 2005. DOI : 10.5075/epfl-thesis-3200.

Low temperature investigation of electrical conduction in polysilicon: simulation and experiment

S. EcoffeyS. MahapatraV. PottD. BouvetG. Reimbold  et al.

2005.

Teaching & PhD

PhD Students

Ketong Yang, Edoardo Tenna, Hao Chen Yeh, Shima Rezaee Fakhr, Tú Anh Lê, Yann Zosso, Ali Gilani, Ehsan Ansari, Andrea Iaconeta, Zahra Saadat Somaehsofla, Niccolò Martinolli, Emi Myzeqari, Siddharth Gautam, Cyrille Masserey, Vanessa Conti, Lotte Franciska N De Schrijver, Onofrio Davide Caputo, Benoît Valentin Hirtzel

Past EPFL PhD Students

Costin Anghel, Nasser Hefiana, Santanu Mahapatra, Serge Ecoffey, Raphaël Fritschi, Marcelo Bento Pisani, Alexander Mehdaoui, Nicolas Abelé, Vincent Pott, Kirsten Emilie Moselund, Nicoleta-Diana Ciressan, Daniel Grogg, Katherine Boucart, Montserrat Fernandez-Bolanos Badia, Donatello Acquaviva, Anupama Arun, Matthieu Bopp, Giovanni Antonio Salvatore, Jyotshna Bhandari, Nenad Cvetkovic, Luca De Michielis, Mohammad Najmzadeh, Alexandru Rusu, Hesham Ghoneim, Livio Lattanzio, Ji Cao, Sebastian Thimotee Bartsch, Marion Hermersdorf, Sara Rigante, Hoël Maxime Guérin, Elizabeth Buitrago Godinez, Negar Moridi, Nilay Dagtekin, Arnab Biswas, Pankaj Sharma, Clara-Fausta Moldovan, Wolfgang Amadeus Vitale, Davide Cutaia, Cem Alper, Mariazel Maqueda López, Emanuele Andrea Casu, Erick Antonio Garcia Cordero, Junrui Zhang, Ali Saeidi, Maneesha Rupakula, Nicolò Oliva, Francesco Bellando, Clarissa Convertino, Elisabetta Corti, Teodor Rosca, Fatemeh Qaderi Rahaqi, Carlotta Gastaldi, Luca Capua, Sadegh Kamaei Bahmaei, Fabio Bersano, Yann Christophe Sprunger, Hung-Wei Li

Past EPFL PhD Students as codirector

Yogesh Singh Chauhan, Michele Tamagnone

Courses

Aspects of quantum science and sustainability

QUANT-411

We explore the intersection of quantum technologies and sustainability. Topics: 1)discussions of fundamental aspects of thermodynamics of computation; 2)analysis and benchmarks of energy consumption in current and near term real quantum devices; 3)projects on use cases through personal student work.

Nanoelectronics

EE-535

This lecture overviews and discusses the last trends in the technology and principles of nanoelectronic devices for more aggressive scaling, better performances, added functionalities and lower energy per function. The opportunities of these advances compared to industrial roadmaps are analized.

Nanoscale MOSFETs and beyond CMOS devices

MICRO-611

This course provides the trends in nanoelectronics for scaling, better performances and lower energy per function. It covers fundamental phenomena of nanoscale devices, beyond CMOS steep slope switches, emerging architectures, cryo electronics, non-volatile memories and energy efficient smart sensin

Semiconductor devices II

EE-567

Students will learn about understanding the fundamentals and applications of emerging nanoscale devices, materials and concepts. Remark: at least 5 students should be enrolled for the course to be given

Wearables and implantables for personalized and preventive healthcare

MICRO-624

This multidisciplinary course presents, from both engineering and medical perspectives, the state-of-the-art, applications and impact of wearable and implantable technologies, with focus on cardiovascular healthcare shift from intervention-based to personalized and preventive medical strategies.