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Anna Fontcuberta i Morral
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office(s):
MXC330
phone(s): [+41 21 69] 37394,37368
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MISSION
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My research activities are centered on the materials science and engineering of semiconductor nanostructures, specifically nanowires. Nanowires are filamentary crystals with a very high ratio of length to diameter, the latter being in the nanometer range. Semiconductor nanowires are of significant interest from a fundamental point of view as they exhibit new physical and chemical properties owing to their large surface-to-volume ratio, low dimensionality and confinement in one dimension. From a technological perspective, they constitute attractive building blocks for the assembly of novel nano-electronic and nano-photonic systems, as well as biochemical sensors.
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BIOGRAPHY
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Since 2008 Assistant Professor at the Institut des Materiaux, EPFL
2009 Habilitation in Physics, Technische Universität München
2005-2010 Marie Curie Excellence Grant Team Leader at ‘Walter Schottky Institut’, Technische Universität München, on leave from ‘Centre National de la Recherche Scientifique’ (CNRS, France)
2004-2005 Visiting Scientist at the California Institute of Technology, on leave from CNRS; Senior Scientist and co-founder of Aonex Technologies (a startup company for large area layer transfer of InP and Ge on foreign substrates for the main application of multi-junction solar cells)
2003 Permanent Research Fellow at CNRS, Ecole Polytechnique, France
2001-2002 Postdoctoral Scholar at the California Institute of Technology
‘Study of wafer bonding and hydrogen-induced exfoliation processes for integration of mismatched materials in views of photovoltaic applications”
Sponsor: Professor Harry A. Atwater
1998-2001 PhD in Materials Science, Ecole Polytechnique
‘Study of polymorphous silicon: growth mechanisms, optical and structural properties. Application to Solar Cells and Thin Film Transistors’
Advisor: Pere Roca i Cabarrocas
1997-1998 Diplôme d’Etudes Approfondis (D.E.A.) in Materials Science at Université Paris XI, France .
1993-1997 BA in Physics at Universitat de Barcelona
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MAIN PUBLICATIONS
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Untangling the Electronic Band Structure of Wurtzite GaAs Nanowires by Resonant Raman Spectroscopy, B. Ketterer, M. Heiss, E. Uccelli, J. Arbiol, A. Fontcuberta i Morral, ACS Nano
Three-dimensional twinning of self-catalyzed GaAs nanowires on Si substrates, E. Uccelli, J. Arbiol, C. Magen, P. Krogstrup, E. Russo-Averchi, M. Heiss, G. Mugny, F. Morier-Genoud, J. Nygard, J.R. Morante, A. Fontcuberta i Morral, Nano Letters asap (2011)
Phonon confinement and plasmon-phonon interaction in nanowire based quantum wells, Bernt Ketterer, Jordi Arbiol, Anna Fontcuberta i Morral, Phys. Rev. B (2011), accepted
InAs Quantum Dot Arrays Decorating the Facets of GaAs Nanowires, E. Uccelli, J. Arbiol, J.R. Morante, A. Fontcuberta i Morral, ACS Nano, DOI: 10.1021/nn101604k
p-doping mechanisms in catalyst-free GaAs nanowires, J. Dufouleur*, C. Colombo*, T. Garma, B. Ketterer, E. Uccelli, M. Nicotra, A. Fontcuberta i Morral, Nano Lett, 10, 1734 (2010)
Quantum interference control of femtosecond, microampere current bursts in single GaAs nanowires, C. Ruppert, S. Thunich, G. Abstreiter, A. Fontcuberta i Morral, A.W. Holleitner, M. Betz, Nano Lett., 10, 1799 (2010)
Raman Spectroscopy of wurtzite and zinc-blende GaAs nanowires: Polarization dependence, selection rules, and strain effects, I. Zardo, S. Conesa-Boj, F. Peiro, J. R. Morante, J. Arbiol, E. Uccelli, G. Abstreiter and A. Fontcuberta i Morral, Physical Review B 80, 245324 (2009)
Structural and optical properties of high quality zinc-blende/wurtzite GaAs nanowire heterostructures, D. Spirkoska, J. Arbiol, A. Gustafsson, S. Conesa-Boj, F. Glas, I. Zardo, M. Heigoldt, M. H. Gass, A. L. Bleloch, S. Estrade, M. Kaniber, J. Rossler, F. Peiro, J. R. Morante, G. Abstreiter, L. Samuelson and A. Fontcuberta i Morral, Physical Review B 80, 245325 (2009)
Gallium arsenide p-i-n radial structures for photovoltaic applications, C. Colombo, M. Heiβ, M. Graetzel, A. Fontcuberta i Morral, Appl. Phys. Lett. 94, 173108 (2009)
Long Range Epitaxial Growth of Prismatic Heterostructures on the facets of Catalyst-Free GaAs Nanowires, Matthias Heigoldt, Jordi Arbiol, Danĉe Spirkoska, Josep M. Rebled, Sònia Conesa-Boj, Gerhard Abstreiter, Francesca Peiró, Joan R. Morante, Anna Fontcuberta i Morral, J. Mater. Chem. 19, 840-848 (2009)
Prismatic Quantum Heterostructures
Synthesized on Molecular-Beam Epitaxy GaAs
Nanowires, Anna Fontcuberta i Morral, Dance Spirkoska,
Jordi Arbiol, Matthias Heigoldt, Joan Ramon Moranteand Gerhard Abstreiter, Small, 4, 899-903 (2008)
Growth mechanisms of Ga-assisted catalyst-free MBE GaAs nanowires, C. Colombo, D. Spirkoska, M. Frimmer, G. Abstreiter, A. Fontcuberta i Morral, Physical Review B 77, 155326 (2008)
Nucleation mechanism of gallium-assisted molecular beam epitaxy growth of gallium arsenide nanowires, A. Fontcuberta i Morral, C. Colombo, J. Arbiol, J.R. Morante, G. Abstreiter, Appl. Phys. Lett. 92, 063112 (2008)
Synthesis of silicon nanowires with wurtzite crystalline structure by standard Chemical Vapour Deposition, A . Fontcuberta i Morral, J. Arbiol, J.D. Prades, A. Cirera, J.R. Morante, Adv. Mater. 19, 1347-1351 (2007)
Influence of Cu as a catalyst on the properties of silicon nanowires synthesized by the Vapor-Solid-Solid mechanism, 9. J. Arbiol, B. Kalache, P. Roca i Cabarrocas, J. R. Morante, A. Fontcuberta i Morral , Nanotechnology 18 (2007) 305606
Observation of incubation times in the nucleation of silicon nanowires obtained by the Vapor-Liquid-Solid method, B. Kalache, P. Roca i Cabarrocas,A. Fontcuberta i Morral, Jap. J. Appl. Phys. 45 , L109 (2006)
Spectroscopic studies of the thermal evolution of hydrogen bonding in InP and consequences for the mechanism of hydrogen induced exfoliation of InP, A. Fontcuberta i Morral, J. M. Zahler, M. Griggs, Harry A. Atwater, Y. J. Chabal, Phys. Rev. B 72, 08219 (2005)
Structure and hydrogen content of polymorphous silicon thin films studied by spectroscopic ellipsometry and nuclear measurements, A. Fontcuberta i Morral, P. Roca i Cabarrocas, C. Clerc, Phys. Rev. B 69, 125307 (2004)
InGaAs/InP double heterostructures on In/Si templates fabricated by wafer bonding and hydrogen induced exfoliation of InP, A. Fontcuberta i Morral, J. M. Zahler, S. P. Ahrenkiel, M. Wanlass, Harry. A. Atwater, Appl. Phys. Lett. 83, 5413 (2003)
Horizontal Conformal Anodic Oxidation Of Aluminium Thin Films, 17. C-S. Cojocaru, J-M. Padovani, T. Wade, C. Mandoli, G. Jaskierowicz, J-E. Wegrowe, A. Fontcuberta i Morral, D. Pribat, Nanoletters, 5, 675 (2005)
Plasma production of nanocrystalline silicon particles and polymorphous silicon thin films for large-area electronic devices, P. Roca i Cabarrocas, A. Fontcuberta i Morral, S. Lebib, Y. Poissant, Pure Appl. Chem., 74 , 359 (2002)
The role of hydrogen in the formation of microcrystalline silicon, A. Fontcuberta i Morral, J. Bertomeu, P.Roca i Cabarrocas, Materials Science and Engineering B69-70, 559 (2000)
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Tenure Track Assistant Professor 