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Doctoral Assistant |
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Laboratory of Nanoscale Electronics and Structures
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Student |
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Doctoral Program in Physics
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Jacopo Brivio
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Laboratory of Nanoscale Electronics and Structures
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PhD student
birth date: 12.11.1984
nationality: Italian
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office(s):
BM2143
phone(s): [+41 21 69] 31167
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BIOGRAPHY
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Feb. 2007 - Bachelor degree in Physics, Università degli studi di Milano
From Sep. 2008 to Jul. 2009 - Internship at Numonyx (STmicroelectronic-Intel)
Jul. 2009 - Master degree in Physics, Università degli studi di Milano
From Oct. 2009 - Ph.D. candidate at EPFL
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MAIN PUBLICATIONS
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Revealing Copper Contamination in Silicon after Low Temperature Treatments, Polignano, M. L., Brivio, J. et al. , ECS Transactions 25(3): 337-348. (2009)
Niobium Contamination in Silicon, Polignano, M. L., Codegoni, D., Brivio, J. et al., ECS Transactions 33(11): 133-144. (2010)
Single-layer MoS2 transistors, Radisavljevic, B., Radenovic, A., Brivio, J., Giacometti, V. and Kis, A., Nature Nanotechnology 6, 147-150, (2011).
Ripples and Layers in Ultrathin MoS2 Membranes, Brivio, J., Alexander, D.T.L. and Kis, A., Nanoletters ASAP (October 19, 2011)
Stretching and Breaking of Ultrathin MoS2, Bertolazzi, S., Brivio, J. and Kis, A., ACS Nano ASAP (November 16, 2011)
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