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Full Professor |
SB
ICMP
LASPE
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Full Professor |
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SPH - Teaching
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Full Professor |
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IMX - Administration
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Full Professor |
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EDPY - Teaching
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Nicolas Grandjean
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office(s):
PHD3334
phone(s): [+41 21 69] 33444,33442
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MISSION
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Exploring quantized structures based on emerging semiconductors in both photonics and electronics. This covers a broad research area starting from fundamental studies around light-matter interaction in microcavities and nanostructures, to photonic devices such as blue lasers and superluminescent light emitting diodes.
These activities are supported by Swiss national projects (FNS, CTI/KTI, and NCCR "Quantum Photonics"), European projects, and contracts with industrial partners.
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BIOGRAPHY
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Nicolas Grandjean was born in France and received his PhD degree in Physics from the University of Nice-Sophia Antipolis in 1994. He was working during his PhD thesis on III-V semiconductor heterostructures. From 1994 to 2003, he was a member of the permanent staff at the French National Center for Scientific Research (CNRS). His research activities were focused on the physical properties of GaN semiconductor based nanostructures for optoelectronics. In 2004, he was appointed tenure-track Assistant Professor at the Ecole polytechnique fédérale de Lausanne (EPFL) in the Institute of Quantum Photonics and Electronics. He was promotted Full Professor in Physics in 2009. He is currently director of the Laboratory of Advanced Semiconductors for Photonics and Electronics at the Institute of Condensed Matter Physics. In 2004 he was awarded the Sandoz Family Foundation grant for Academic Promotion and received in 2010 the “Nakamura Lecturer” award from the University of California at Santa Barbara (UCSB). He is author or co-author of more than 300 publications in peer-reviewed international journals, 5 book chapters, and he holds 4 patents. He is also acting as Scientific Advisor for a large industrial group. He recently participated to the creation of a start-up (Novagan) for the purpose of transferring unique expertise in blue light emitters and transistors. His current research activities are centered on the physics and technology of III-V nitride semiconductors, and in particular on polariton physics, quantum dots, intersubband transitions, and 2D electron gas.
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MAIN PUBLICATIONS
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Pinning and depinning of the Polarization of Exciton-Polariton Condensates at Room Temperature, J. Levrat, R. Butté, T. Christian, M. Glauser, E. Feltin, J.-F. Carlin, N. Grandjean, D. Read, A. V. Kavokin, Y. G. Rubo, Phys. Rev. Lett. 104, 166402 (2010)
Phase diagram of a polariton laser from cryogenic to room temperature, R. Butté, J. Levrat, G. Christmann, E. Feltin, J.-F. Carlin, and N. Grandjean, Phys. Rev. B 80, 233301 (2009)
Spontaneous Polarization Buildup in a Room-Temperature Polariton Laser, J. J. Baumberg, A. V. Kavokin, S. Christopoulos, A. J. D. Grundy, R. Butté, G. Christmann, D. D. Solnyshkov, G. Malpuech, G. Baldassarri Höger von Högersthal, E. Feltin, J.-F. Carlin, and N. Grandjean
, Phys. Rev. Lett. 101, 136409 (2008)
Complex behavior of biexcitons in GaN quantum dots due to a giant built-in polarization field , D. Simeonov, A. Dussaigne, R. Butté, and N. Grandjean
, Phys. Rev. B 77, 075306 (2008)
Blue laser diodes including lattice-matched Al0.83In0.17N bottom cladding layer, A. Castiglia, E. Feltin, J. Dorsaz, G. Cosendey, J.-F. Carlin, R. Butte, and N. Grandjean
, Electron. Lett., 44, 521 (2008)
Large vacuum Rabi splitting in a multiple quantum well GaN-based microcavity in the strong-coupling regime, Gabriel Christmann, Raphaël Butté, Eric Feltin, Anas Mouti, Pierre A. Stadelmann, Antonino Castiglia, Jean-François Carlin, and Nicolas Grandjean
, Phys. Rev. B 77, 085310 (2008)
Room-Temperature Polariton Lasing in Semiconductor Microcavities, S. Christopoulos, G. Baldassarri Hoger von Hogersthal, A. J. D. Grundy, P. G. Lagoudakis, A.V. Kavokin, and J. J. Baumberg, G. Christmann, R. Butté, E. Feltin, J.-F. Carlin, and N. Grandjean
, Phys. Rev. Lett. 98, 126405 (2007)
High electron mobility lattice-matched AlInN/GaN field-effect transistor heterostructures, M. Gonschorek, J.-F. Carlin, E. Feltin, M. A. Py, and N. Grandjean, Appl. Phys. Lett. 89, 062106 (2006)
Near infrared absorption and room temperature photovoltaic response in AlN/GaN superlattices grown by metal-organic vapor-phase epitaxy, E. Baumann, F. R. Giorgetta, D. Hofstetter, S. Golka, W. Schrenk, G. Strasser, L. Kirste, S. Nicolay, E. Feltin, J. F. Carlin, and N. Grandjean, Appl. Phys. Lett. 89, 041106 (2006)
Impact of inhomogeneous excitonic broadening on the strong exciton-photon coupling in quantum well nitride microcavities, G. Christmann, R. Butté, E. Feltin, J.-F. Carlin, and N. Grandjean
, Phys. Rev. B 73, 153305 (2006)
Inhomogeneous broadening of AlxGa1-xN/GaN quantum wells, F. Natali, D. Byrne, M. Leroux, B. Damilano, F. Semond, A. Le Louarn, S. Vezian, N. Grandjean, and J. Massies, Phys. Rev. B 71 (7), (2005)
Observation and modeling of the time-dependent descreening of internal electric field in a wurtzite GaN/Al0.15Ga0.85N quantum well after high photoexcitation, P. Lefebvre, S. Kalliakos, T. Bretagnon, P. Valvin, T. Taliercio, B. Gil, N. Grandjean, and J. Massies, Phys. Rev. B 69 (3), (2004)
Monolithic white light emitting diodes based on InGaN/GaN multiple-quantum wells, B. Damilano, N. Grandjean, C. Pernot, and J. Massies, Jpn. J Appl. Phys. Lett. 40, L918 (2001)
Intraband absorptions in GaN/AlN quantum dots in the wavelength range of 1.27-2.4 µm, K. Moumanis, A. Helman, F. Fossard, M. Tchernycheva, A. Lusson, F. H. Julien, B. Damilano, N. Grandjean, and J. Massies, Appl. Phys. Lett. 82 (6), 868 (2003)
Growth of Gallium nitride epitaxial layers and applications, B. Beaumont, P. Gibart, N. Grandjean, and J. Massies, C.R. Acad. Sci. Paris, t.1, Série IV, 35 (2000)
Quantum confined Stark effect due to built-in internal polarization field in (Al,Ga)N/GaN quantum wells, M. Leroux, N. Grandjean, J. Massies, B. Gil, P. Lefebvre, and P. Bigenwald, Phys. Rev. Rapid Comm B 58, R13371 (1998)
From visible to white light emission by GaN quantum dots on Si(111) substrate, B. Damilano, N. Grandjean, F. Semond, J. Massies and M. Leroux, Appl. Phys. Lett. 75, 962 (1999)
Surface segregation in (Ga,In)As/GaAs quantum boxes, N. Grandjean, J. Massies, and O Tottereau, Phys. Rev. Rapid Comm. B 55, R10189 (1997)
Kinetics of surfactant-mediated epitaxy of III-V semiconductors , N. Grandjean and J. Massies, Phys. Rev. Rapid Comm. B 53, R13231 (1996)
Monte Carlo simulation of In surface segregation during the growth of InxGa1-xAs on GaAs(001), N. Grandjean, J. Massies, and M. Leroux, Phys. Rev. B 53, 998 (1996)
Oscillation of the lattice relaxation in layer-by-layer epitaxial growth of highly strained materials, J. Massies and N. Grandjean, Phys. Rev. Lett. 71, 1411 (1993)
Confined electron states in ultrathin AlAs single quantum wells under pressure, M. Leroux, N. Grandjean, B. Chastaingt, C. Deparis, G. Neu, and J. Massies, Phys. Rev. B 45, 11846 (1992)
Delayed relaxation by surfactant action in highly strained III-V semiconductor epitaxial layers, N. Grandjean, J. Massies, and V.H. Etgens, Phys. Rev. Lett. 69, 796 (1992)
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