Giovanni Santoruvo received the B.S. degrees in electronics from Politecnico di Bari, Bari, Italy, and the Master degree in electronics from Politecnico di Torino, Turin, Italy. He is currently pursuing the Ph. D. degree in Power and Wide-band-gap Electronics Research Laboratory (POWERlab), École polytechnique fédérale de Lausanne (EPFL), Lausanne, Switzerland.
His current research interests include electron transport and high-frequency appliction in III-nitride mesoscopic devices.