Dr. Alessandro Pezzotta received the M.Sc. and Ph.D. degrees in Solid-State Physics from University of Milano-Bicocca in 2012 and 2015 respectively. During the Ph.D. he developed a mixed-signal CMOS frontend ASIC devoted to the Gas-Electron Multiplier detector readout employed in Neutron Beam Monitoring applications. He also participated into R&D activities regarding CMOS continuous-time analog filters and sensors analog frontends. Since 2016 he joined the Integrated Circuit Laboratory (ICLAB) at EPFL, working on semiconductor device modeling, targeting design methodologies based on inversion coefficient in terms of DC characteristics, linearity, noise and RF performance, also for radiation-tolerant applications.
|Ph.D. in Physics and Astronomy||Particle Detectors Readout Electronics, CMOS CT Analog Filters||University of Milano-Bicocca||11/12/2015|
Related to Current Work
C. Enz; A. Pezzotta : Nanoscale MOSFET Modeling for the Design of Low-power Analog and RF Circuits. 2016. 23rd International Conference on Mixed Design of Integrated Circuits and Systems (MIXDES). p. 21-26. DOI : 10.1109/MIXDES.2016.7529693.
C.-M. Zhang; F. Jazaeri; A. Pezzotta; C. Bruschini; G. Borghello et al. : GigaRad Total Ionizing Dose and Post-Irradiation Effects on 28 nm Bulk MOSFETs. 2016. Nuclear Science Symposium, Medical Imaging Conference and Room-Temperature Semiconductor Detector Workshop (NSS/MIC/RTSD), Strasbourg, France, France, October 29 - November 6, 2016. DOI : 10.1109/NSSMIC.2016.8069869.
A. Pezzotta; C.-M. Zhang; F. Jazaeri; C. Bruschini; G. Borghello et al. : Impact of GigaRad Ionizing Dose on 28nm Bulk MOSFETs for Future HL-LHC. 2016. 46th European Solid-State Device Research Conference (ESSDERC), Lausanne, Switzerland, September 12-15, 2016. p. 146-149. DOI : 10.1109/ESSDERC.2016.7599608.
C. Enz; F. Chicco; A. Pezzotta : Nanoscale MOSFET Modeling: Part 2: Using the Inversion Coefficient as the Primary Design Parameter; IEEE Solid-State Circuits Magazine. 2017. DOI : 10.1109/MSSC.2017.2745838.
F. Chicco; A. Pezzotta; C. C. Enz : Analysis of power consumption in LC oscillators based on the inversion coefficient. 2017. 2017 IEEE International Symposium on Circuits and Systems (ISCAS), Baltimore, MD, USA, 28-31 May 2017. p. 1-4. DOI : 10.1109/ISCAS.2017.8050648.
F. Jazaeri; C.-M. Zhang; A. Pezzotta; C. Enz : Charge-Based Modeling of Double-Gate MOSFETs Including Interface and Oxide Trapped Charges; Journal of electron device society. 2017.
F. Jazaeri; A. Pezzotta; C. Enz : Carrier Mobility Extraction in FETs; IEEE Transactions on Electron Devices. 2017. DOI : 10.1109/Ted.2017.2763998.
C. Enz; F. Chicco; A. Pezzotta : Nanoscale MOSFET Modeling: Part 1: The Simplified EKV Model for the Design of Low-Power Analog Circuits; IEEE Solid-State Circuits Magazine. 2017. DOI : 10.1109/MSSC.2017.2712318.
F. Chicco; R. Capoccia; A. Pezzotta; C. Enz : Linear analysis of phase noise in LC oscillators in deep submicron CMOS technologies. 2017. 2017 International Conference on Noise and Fluctuations (ICNF), Vilnius, Lithuania, 20-23 June 2017. p. 1-4. DOI : 10.1109/ICNF.2017.7985954.
C.-M. Zhang; F. Jazaeri; A. Pezzotta; C. Bruschini; G. Borghello et al. : Characterization of GigaRad Total Ionizing Dose and Annealing Effects on 28 nm Bulk MOSFETs; IEEE Transactions on Nuclear Science. 2017. DOI : 10.1109/TNS.2017.2746719.
C.-M. Zhang; F. Jazaeri; A. Pezzotta; C. Bruschini; G. Borghello et al. : Total Ionizing Dose Effects on Analog Performance of 28 nm Bulk MOSFETs. 2017. 47th European Solid-State Device Research Conference (ESSDERC), Leuven, Belgium, Belgium, September 11-14, 2017. p. 30-33. DOI : 10.1109/ESSDERC.2017.8066584.
S. Mattiazzo; M. Bagatin; D. Bisello; S. Gerardin; A. Marchioro et al. : Total Ionizing Dose effects on a 28 nm Hi-K metal-gate CMOS technology up to 1 Grad; Journal Of Instrumentation. 2017. DOI : 10.1088/1748-0221/12/02/C02003.
F. Jazaeri; C. Zhang; A. Pezzotta; C. Enz : Charge-Based Modeling of Radiation Damage in Symmetric Double-Gate MOSFETs; IEEE JOURNAL OF THE ELECTRON DEVICES SOCIETY. 2018. DOI : 10.1109/JEDS.2017.2772346.
F. Chicco; A. Pezzotta; C. C. Enz : Charge-Based Distortion Analysis of Nanoscale MOSFETs; IEEE Transactions on Circuits and Systems I: Regular Papers. 2018. DOI : 10.1109/TCSI.2018.2868387.
A. Pezzotta; F. Jazaeri; H. Bohuslavskyi; L. Hutin; C. Enz : A Design-oriented Charge-based Simplified Model for FDSOI MOSFETs. 2018. EUROSOI-ULIS 2018 Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon, Granada, Spain, March 19–21, 2018.
A. Pezzotta; F. Jazaeri; H. Bohuslavskyi; L. Hutin; C. Enz : A Design-oriented Charge-based Simplified Model for FDSOI MOSFETs. 2018. Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon (EUROSOI-ULIS), Granada (Spain), 18-21 March 2018.
M. Cacciotti; V. Camus; J. Schlachter; A. Pezzotta; C. Enz : Hardware Acceleration of HDR-Image Tone Mapping on an FPGA-CPU Platform through High-Level Synthesis. 2018-09-06. IEEE International System-on-Chip Conference (SOCC), Arlington, Virginia, USA, September 4-7, 2018.
|A. Pezzotta, G. Croci, A. Costantini, M. De Matteis, D. Tagnani, G. Corradi, F. Murtas, G. Gorini, A. Baschirotto
Journal of Instrumentation 11 (03), C03058
|GEMMA and GEMINI, two dedicated mixed-signal ASICs for Triple-GEM detectors readout|
|M. De Matteis, A. Pezzotta, S. D'Amico and A. Baschirotto
IEEE Journal of Solid-State Circuits, vol. 50, no. 7, pp. 1516-1524, July 2015
|A 33 MHz 70 dB-SNR Super-Source-Follower-Based Low-Pass Analog Filter|
|M. De Matteis, A. Pezzotta, A. Pipino, A. Baschirotto and S. D'Amico
Electronics Letters, vol. 52, no. 13, pp. 1100-1102, 6 23 2016
|21.5dBm-IIP3 22.5MHz fourth-order follow-the-leader-feedback analogue filter|