Assim Boukhayma was born in Rabat, Morocco, on February 5, 1988. He received the graduate engineering degree (D.I.) in information and communication technology and the M.Sc. in microelectronics and embedded systems architecture from Telecom-Bretagne, Brest, France, in 2013. He is currently working toward the Ph.D. at Ecole Polytechnique Federale de Lausanne (EPFL), Neuchatel, Switzerland and Commissariat a l Energie Atomique (CEA-LETI), Grenoble, France with Prof. Christian Enz on the subject of CMOS image sensors.
From 2011 to 2012, he worked with Bouygues-Telecom as a Telecommunication Radio Junior Engineer. In 2013, he did his M.Sc. Internship at Commissariat a l Energie Atomique (CEA-LETI) on the design of a low noise CMOS THz camera and published this work at the 40th European Solid-State Circuits Conference (ESSCIRC).
R. Capoccia; A. Boukhayma; F. Jazaeri; C. Enz : Compact Modeling of Charge Transfer in Pinned Photodiodes for CMOS Image Sensors; Ieee Transactions On Electron Devices. 2019-01-01. DOI : 10.1109/TED.2018.2875946.
A. Boukhayma; A. Peizerat; C. Enz : A Sub-0.5 Electron Read Noise VGA Image Sensor in a Standard CMOS Process; IEEE Journal of Solid-State Circuits. 2016. DOI : 10.1109/JSSC.2016.2579643.
A. Boukhayma; C. Enz : Noise Reduction Techniques and Scaling Effects towards Photon Counting CMOS Image Sensors; Sensors. 2016. DOI : 10.3390/s16040514.
A. Boukhayma; C. Enz : A Low-Noise CMOS THz Imager Based on Source Modulation and an In-Pixel High-Q Passive Switched-Capacitor N-Path Filter; Sensors. 2016. DOI : 10.3390/s16030325.
A. Boukhayma; A. Peizerat; C. Enz : Temporal Readout Noise Analysis and Reduction Techniques for Low-Light CMOS Image Sensors; Ieee Transactions On Electron Devices. 2016. DOI : 10.1109/Ted.2015.2434799.
A. Boukhayma; C. Enz : Comparison of two optimized readout chains for low light CIS; SPIE Proceedings. 2014. DOI : 10.1117/12.2036740.
A. Caizzone; A. Boukhayma; C. Enz : A 2.6μW Monolithic CMOS Photoplethysmographic Sensor Operating with 2μW LED Power. 2019-03-07. IEEE International Solid- State Circuits Conference - (ISSCC), San Francisco, CA, USA, February 17-21, 2019. DOI : 10.1109/ISSCC.2019.8662404.
A. Caizzone; A. Boukhayma; C. Enz : An Accurate kTC Noise Analysis of CDS Circuits. 2018-06-25. NEWCAS, Montreal, Quebec, Canada, June 24-27, 2018.
R. Capoccia; A. Boukhayma; C. Enz : Analysis of CMS noise reduction for 65 nm CIS. 2017-05-28. IEEE International Symposium on Circuits and Systems (ISCAS), Baltimore, MD, USA, 28-31 May 2017. DOI : 10.1109/ISCAS.2017.8050356.
A. Caizzone; A. Boukhayma; C. Enz : Comprehensive Noise Analysis in PPG Read-out Chains. 2017. 2017 International Conference on Noise and Fluctuations (ICNF), Vilnius, Lithuania, June 20-23, 2017. DOI : 10.1109/ICNF.2017.7985971.
R. Capoccia; A. Boukhayma; C. Enz : Sub-electron CIS noise analysis in 65 nm process. 2016-12-11. IEEE International Conference on Electronics, Circuits and Systems (ICECS), Monte Carlo, Monaco, 11-14 Dec. 2016. DOI : 10.1109/ICECS.2016.7841263.
A. Boukhayma; C. Enz : A noise reduction circuit technique for CMOS terahertz imaging. 2015. 2015 International Conference on Noise and Fluctuations (ICNF), Xian. DOI : 10.1109/ICNF.2015.7288569.
C. Enz; A. Boukhayma : Recent trends in low-frequency noise reduction techniques for integrated circuits. 2015. Noise and Fluctuations (ICNF), 2015 International Conference on, Xian, China, 2-6 June 2015. DOI : 10.1109/ICNF.2015.7288622.
C. Enz; A. Boukhayma; F. Krummenacher : Simple thermal noise estimation of OTA-based switched-capacitor filters. 2015. Noise and Fluctuations (ICNF), 2015 International Conference on, Xian, China, 2-6 June 2015. DOI : 10.1109/ICNF.2015.7288545.
A. Boukhayma; C. Enz : A correlated multiple sampling passive switched capacitor circuit for low light CMOS image sensors. 2015. DOI : 10.1109/ICNF.2015.7288563.
A. Boukhayma; C. Enz : A new method for kTC noise analysis in periodic passive switched-capacitor networks. 2015. New Circuits and Systems Conference (NEWCAS), 2015 IEEE 13th International, Grenoble, France, 7-10 June 2015. DOI : 10.1109/NEWCAS.2015.7182091.
A. Boukhayma; C. Enz : A 0.4 e-rms Temporal Readout Noise 7.5 µm Pitch and a 66% Fill Factor Pixel for Low Light CMOS Image Sensors. 2015. International Image Sensors Worshop, Vaals, Nederlands, 8-11 June, 2015.
A. Boukhayma; C. Enz : Design optimization for low light CMOS image sensors readout chain. 2014. New Circuits and Systems Conference (NEWCAS), 2014 IEEE 12th International, Trois-Rivieres, QC, 22-25 June 2014. DOI : 10.1109/NEWCAS.2014.6934028.
A. Boukhayma; C. Enz : A 533pW NEP 31×31 pixel THz image sensor based on in-pixel demodulation. 2014. European Solid State Circuits Conference (ESSCIRC), ESSCIRC 2014 - 40th, Venice Lido, Italy, 22-26 Sept. 2014. p. 303-306. DOI : 10.1109/ESSCIRC.2014.6942082.
A. Boukhayma : Ultra Low Noise CMOS Image Sensors. Lausanne, EPFL, 2016. DOI : 10.5075/epfl-thesis-7248.
A. Boukhayma ; CORRELATED MULTIPLE SAMPLING CMOS IMAGE SENSOR. US 20160014361 A1 . 2016.
A. Boukhayma; A. Peizerat ; Cmos image sensor. US 20160013238 A1 . 2016.
A. Boukhayma ; Image acquisition method and system. US 20140253734 A1 . 2014.