El Mahdi El Mhamdi
EPFL IC IINFCOM DCL
INR 315 (Bâtiment INR)
Station 14
CH-1015 Lausanne
Publications
Conferences
| El Mahdi El Mhamdi, Rachid Guerraoui, Sébastien Rouault International Conference on Machine Learning, Stockholm, Sweden, 2018 |
The Hidden Vulnerability of Distributed Learning in Byzantium |
| Georgios Damaskinos, El Mahdi El Mhamdi, Rachid Guerraoui, Rhicheek Patra, Mahsa Taziki Internation Conference on Machine Learning, Stockholm, Sweden, 2018 |
Asynchronous Byzantine Machine Learning - the case of SGD |
| El Mahdi El Mhamdi, Rachid Guerraoui, Hadrien Hendrikx, Alexandre Maurer Neural Information Processing Systems, Long Beach, California, USA, 2017 |
Dynamic Safe Interruptibility for Decentralized Multi-Agent Reinforcement Learning |
| Peva Blanchard, El Mahdi El Mhamdi, Rachid Guerraoui, Julien Stainer Neural Information Processing Systems, Long Beach, California, USA, 2017 |
Machine Learning with Adversaries: Byzantine Tolerant Gradient Descent |
| El Mahdi El Mhamdi, Rachid Guerraoui IEEE International Parallel and Distributed Processing Symposium, Orlando, USA, 2017 |
When Neurons Fail |
| El Mahdi El Mhamdi, Rachid Guerraoui, Sébastien Rouault IEEE International Symposium on Reliable Distributed Systems, Hong Kong, 2017 |
On the Robustness of a Neural Network |
EM.El Mhamdi, S. De Wolf, J. Holovsky, B. Demaurex, C. Ballif 3rd International Conference on Cristalline Silicon Photovoltaics, Oral Session 9. March 2013, Hamelin, Germany |
Cyclic behaviour in a-Si:H Degradation - Understanding Passivation in High Efficiency Silicon Heterojunction Solar Cells (SHJ) |
| R. Rößler, L. Korte, C. Leendertz, N. Mingirulli, M. El Mhamdi, B. Rech 27th European Photovoltaic Solar Energy Conference and Exhibition ; Frankfurt, Main: EU PVSEC ; 24.9.2012-28.9.2012. München: WIP, 2012. - ISBN 3-936338-28-0, p. 1443-1447 |
ZnO:Al/(p)a-Si:H Contact Formation and Its Influence on Charge Carrier Lifetime Measurements |
Journal
Is light-induced degradation of a-Si:H/c-Si interfaces reversible?
Thin hydrogenated amorphous silicon (a-Si:H) films deposited on crystalline silicon (c-Si) surfaces are sensitive probes for the bulk electronic properties of a-Si:H. Here, we use such samples during repeated low-temperature annealing and visible-light soaking to investigate the long-term stability of a-Si:H films. We observe that during annealing the electronic improvement of the interfaces follows stretched exponentials as long as hydrogen evolution in the films can be detected. Once such evolution is no longer observed, the electronic improvement occurs much faster. Based on these findings, we discuss how the reversibility of light-induced defects depends on (the lack of observable) hydrogen evolution.
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Student work