Solid State Physics, Engineering and Materials Science.
Semiconductor-based technologies and devices for electronics and photonics.
Nanosciences, micro and nano-technologies, quantum electronics and photonics, microcavities, single photon sources and detectors, physics of low dimensional devices.
Infrared and visible lasers for optical communications and displays, light emitting diodes, photonic integrated circuits, photovoltaics, sensors.
III-V and III-nitride wide bandgap semiconductor materials, advanced epitaxial growth and processing techniques.
Biography
Marc Ilegems obtained degrees in Electrical Engineering from the University of Brussels in 1965 and a doctorate in Electrical Engineering from Stanford University in 1970. From 1969 to 1977 he was a Member of Technical Staff at the Solid State Electronics Research Laboratory, Bell Laboratories, Murray Hill. He joined the Ecole Polytechnique Federale (Swiss Federal Institute of Technology) in Lausanne in October 1977 as Professor and Director of the new Interdepartmental Institute of Microelectronics (1977-1983) and subsequently as Director of the Institute of Micro- and Optoelectronics (1983-2000) and of the Semiconductor Device Physics Laboratory (1983-2005).
Prof. Ilegems served as Dean of the Department of Physics from 1998 to 2000, and as Director of the Swiss National Centre of Competence in Research (NCCR) in Quantum Photonics (2001-2005), the Swiss Priority Program OPTICS (1993-1999) and the Swiss National Program on Micro- and Optoelectronics (1983-90). He is a member of the Scientific Council and has acted as expert and consultant for several national and European research organizations.
His current activities include technical and patent consulting for private organizations, contributions to the definition and management of research programs in the framework of bilateral collaborations between Poland, Hungary and Switzerland (2011-2017), and participation as member of various ICT and FET review panels within the Horizon 2020 programme.
Prof. Ilegems received an honorary doctorate from the University of Toulouse (1998) and the Heinrich Welker Award from the Compound Semiconductor Symposium (2006) for his contributions to III-V semiconductor materials and device research.
The research activities of the Semiconductor Device Physics Laboratory centred on the physics and technology of semiconductor devices. The main subjects of interest included quantum photonics (semiconductor microcavities, light emitting diodes, lasers and detectors), wide bandgap semiconductor nitrides, physics of nano and low-dimensional structures, high electron mobility transistors, crystal growth and materials technology. The research programs were carried out in close collaboration with numerous academic and industrial groups in Switzerland and abroad, in particular within the framework of programs of the European Community.
Earlier research topics pursued at Bell Laboratories and at EPFL include Molecular Beam Epitaxy and doping of GaAs and AlGaAs thin films with applications to heterostructure lasers, detectors, and Bragg mirrors, hydride vapor phase epitaxy and physical characterization of GaN on sapphire, liquid-solid phase diagrams of ternary III-V compound systems, and silicon-based non-volatile memory cells.
Prof. Ilegems is the author or co-author of over 250 scientific publications (citation index h = 48) and 7 book chapters, and has supervised over 30 doctoral students in Lausanne. His academic contacts include stays as invited professor at Stanford University (1994) and at the Polytechnic University of Madrid (2007).
Links:
- NCCR Quantum Photonics - http://nccr-qp.epfl.ch/
Publications
Other publications
Selected publications
Grandjean N, Ilegems M
Visible emission from InGaN/GaN quantum-dot materials and devices
Proc. IEEE, vol. 95 (9), pp. 1853-1865 (2007)
Butte R, Christmann G, Feltin E, Carlin JF, Mosca M, Ilegems M, Grandjean N
Room-temperature polariton luminescence from a bulk GaN microcavity
Phys. Rev. B 73 (3): Art. No. 033315 JAN 2006
Feltin E, Carlin JF, Dorsaz J, Christmann G, Butté R, Ilegems M, Grandjean N
Crack-free highly reflective AlInN/AlGaN Bragg mirrors for UV applications
Appl. Phys. Lett. 88 (5): Art. No. 051108 JAN 30 2006
Dorsaz J, Buhlmann HJ, Carlin JF, Ilegems M
Selective oxidation of AlInN layers for current confinement in III-nitride devices
Appl. Phys. Lett 87 (7): Art. No. 072102 AUG 15 2005
Dorsaz J, Carlin JF, Gradecak S, Ilegems M
Progress in AlInN-GaN Bragg reflectors: Application to a microcavity light emitting diode
J. Appl. Phys. 97 (8), Art. 084505, 2005
Badilita V, Carlin JF, Ilegems M
Control of polarization switching in vertical coupled-cavities surface emitting lasers
IEEE Phot. Tech Lett. 16 (2): 365-367 FEB 2004
Gradecak S, Stadelmann P, Wagner V, Ilegems M
Bending of dislocations in GaN during epitaxial lateral overgrowth
Appl. Phys. Lett. 85 (20), 4648-4650, 2004
Carlin JF, Ilegems M
High-quality AlInN for high index contrast Bragg mirrors lattice matched to GaN
Appl. Phys Lett. 83 (4): 668-670 JUL 28 2003
Fiore A, Chen JX, Ilegems M
Scaling quantum-dot light-emitting diodes to submicrometer sizes
Appl. Phys. Lett. 81 (10): 1756-1758 SEP 2 2002
Chen JX, Markus A, Fiore A, Ilegems M
Tuning InAs/GaAs quantum dot properties under Stranski-Krastanov growth mode for 1.3 mu m applications
J. Appl. Phys. 91 (10): 6710-6716, 2002
Wagner V, Parillaud O, Buhlmann HJ, Ilegems M
Influence of the carrier gas composition on morphology, dislocations, and microscopic luminescence properties of selectively grown GaN by hydride vapor phase epitaxy
J. Appl. Phys. 92 (3): 1307-1316 AUG 1 2002
Beck M, Hofstetter D, Aellen T, Faist J, Oesterle U, Ilegems M, Melchior H
Continuous wave operation of a mid-infrared semiconductor laser at room temperature
Science 295 (5553): 301-305 JAN 11 2002
Brunner M., Gulden K., Hovel R., Moser M., Carlin J. F., Stanley R. P., Ilegems M.,
Continuous-wave dual-wavelength lasing in a two-section vertical-cavity laser,
IEEE Photonic Technol. Lett. Vol. 12, pp. 1316-1318, (2000)
Carlin J. F., Royo P., Stanley R. P., Houdre R., Spicher J., Oesterle U., Ilegems M.
Design and characterization of top-emitting microcavity light- emitting diodes,
Semicond. Sci. Technol. Vol. 15, pp. 145-154, (2000)
Fiore A., Oesterle U., Stanley R. P., Ilegems M.
High-efficiency light-emitting diodes at approximate to 1.3 um using InAs-InGaAs quantum dots,
IEEE Photonic Technol. Lett. Vol. 12, pp. 1601-1603, (2000)
Houdre R., Weisbuch C., Stanley R. P., Oesterle U., Ilegems M.
Nonlinear emission of semiconductor microcavities in the strong coupling regime,
Phys. Rev. Lett. Vol. 85, pp. 2793-2796, (2000)
Carlin J.-F., Stanley R.P., Pellandini P., Oesterle U. Ilegems M.
The dual wavelength Bi-vertical cavity surface-emitting laser,
Appl. Phys. Lett. 75, pp. 908-910 (1999).
Royo P., Carlin J. F., Spicher J., Stanley R. P., Houdré R., Bardinal V., Oesterle U., Ilegems M.
High Efficiency Top-Emitting Microcavity Light-Emitting Diodes,
Photonics West '99, SPIE Vol. 3621, pp. 151 ; (1999).
S.A. Makohliso, L. Giovangrandi, D. Léonard, H.-J. Mathieu, M. Ilegems, P. Aebischer
Application of Teflon-AF thin films for biopatterning of neural cell adhesion.
Biosensors and Bioelectronics, 13, 1227, 1998.
M. Rochat, J. Faist, M. Beck, U. Oesterle, M. Ilegems
Far-infrared (l = 88 mm) electroluminescence in a quantum cascade structure.
Appl. Phys. Lett., Vol. 73, pp. 3724-3726, 1998.
Jeanneret B., Hall B.D., Jeckelmann B., Feller U., Buehlmann H.J. Ilegems M.
Measurements of edgeless currents in a Corbino ring in the quantum Hall regime,
Solid State Comm. 102, 287-290, 1997
Pellandini P., Stanley R.P., Houdré R., Oesterle U., Ilegems M., Weisbuch C.
Dual-wavelength laser emission from a coupled semiconductor microcavity,
Appl. Phys. Lett. 71, 864-866, 1997
Beck M., Ilegems M.
Influence of growth conditions on mobility and anisotropy of InyGa1-yAs/In0.52Al0.48As/InP HEMTs
Proc.8th Int. Conf. on InP and related materials, pp. 97-100 (1996).
Carlin J.F., Rudra A., Ilegems M.
Pseudomorphic InGaAs/In(Ga)AsP bidimentional electron gas grown by chemical beam epitaxy,
J. Cryst. Growth 164, 470-475, 1996.
Houdré R., Stanley R.P., Ilegems M.
Strong coupling régime in the presence of inhomogeneous broadening : Resolution of a homogeneous linewidth in an inhomogeneously broadened system, Phys. Rev. A53, 2711-2715 (1996)
Stanley R.P., Houdré R., C. Weisbuch, Oesterle U., Ilegems M.
Cavity polariton photoluminescence in semiconductor microcavities : Experimental evidence,
Phys. Rev. B53, 10 995-11 007 (1996)
Spicher J., Klepser U., Beck M., Rudra A., Sachot R., Ilegems M.,
A 20 Gbit/s Monolithic photoreceiver using InAlAs/InGaAs HEMTs and regrown GaInAs p-i-n photodiodes,
Proc. 8th Int. Conf. on InP and related materials, pp. 439-442 (1996).
Hugi J., Haddab Y., Sachot R., Ilegems M.
Carrier trapping in ultrafast metal-semiconductor-metal photodetectors on InGaAs /GaAs-on-GaAs superlattices. J. Appl. Phys. 77, 1785-1794, 1995.
Ilegems M
"III-V Compound semiconductor epitaxy for optoelectronic integration", in "Optoelectronic Integration: Physics, Technology and Applications", edited by O. Wada, pp. 61-106, Kluwer Academic Publishers, Boston, 1994
Houdré R., Stanley R.P., Oesterle U., Ilegems M., Weisbuch C.
Room temperature cavity-polaritons in a semiconductor microcavity.
Phys. Rev. B 49, 16761-16764, 1994.
Houdré R., Weisbuch C., Stanley, R.P., Oesterle U., Pellandini P., Ilegems M.
Measurement of cavity-polariton dispersion curves from angle resolved photoluminescence experiments,
Phys. Rev. Lett. 73, 2043-2046 (1994)
Stanley R.P., Houidré R., Oesterle O., Gailhanou M., Ilegems M.
Ultrahigh finesse microcavity with distributed Bragg reflectors,
Appl. Phys. Lett. 65, 1883-1885 (1994)
Stanley R., Houdré R., Oesterle U., Ilegems M., Weisbuch C.
Coupled semiconductor microcavities,
Appl. Phys. Lett. 65, 2093-2095 (1994)
Rudra A., Houdré R., Carlin J.F., Ilegems M.
Dynamics of island formation in the growth of InAs/InP quantum wells
J. Crystal Growth 136, 278-281 (1994)
Ilegems M.
InP-based lattice-matched heterostructures, in "Properties of lattice-matched and strained Indium Gallium Arsenide", edited by P. Bhattacharya, pp. 16-25, EMIS Datareviews Series No 8 (INSPEC, London, 1993).
Stanley R.P., Houdre R., Oesterle U., Ilegems M.
Impurity Modes in One-Dimensional Periodic Systems - The Transition from Photonic Band-Gaps to Microcavities, Phys. Rev. A48, 2246 (1993).
Carlin F, Houdré R, Rudra A., Ilegems M.
Island formation in ultra-thin InAs/InP quantum wells grown by chemical beam epitaxy
Appl. Phys. Lett. 59, pp 3018 - 3020, 1991
Gueissaz F., Houdré R., Ilegems M.
DC and RF characteristics of InAlAs/InGaAs dual-gate TEGFET's.
Electron. Lett. 27, 631-632, 1991.
A. Acovic, M. Dutoit, M. Ilegems
Characterization of Hot-Electron-Stressed MOSFETs by Measurements of the Drain Tunnel Current.
IEEE Trans. Electron Devices ED 37, 1467-1476, 1990
M. Zirngibl, J.C. Bischoff, M. Ilegems, J.P. Hirtz, B. Bartelian, P. Beaud, W. Hodel
High Speed 1.3 mm InGaAs/GaAs Superlattice on Si Photodetector.
Electronics Letters 26, 1027-1029, 1990
M. Ilegems
An introduction to molecular beam epitaxy, in "Crystal Growth in Science and Technology", H. Arend and J. Hulliger, editors, Nato ASI Series B, vol. 210. Plenum, New York (1988), pp. 359-395
W. Schwitz, L. Bauder, H.J. Bühlmann, M.A. Py, M. Ilegems
The Quantum Hall Effect as a standard to define the laboratory unit of resistance,
IEEE Trans. Instrum. Meas. IM-36, 240 (1987)
P. Fazan, M. Dutoit, C. Martin, M. Ilegems
Charge generation in thin SiO2 polysilicon gate MOS capacitors,
Solid State Electron. 30, 829 (1987)
T.A. Achtnich, G. Burri, M.A. Py, M. Ilegems
SIMS study of oxygen accumulation at GaAs/AlCaAs interJaces grown by MBE,
Appl. Phys. Lett., 1730 (1987)
M. Ilegems
Properties of III-V layers, in "The Technology and Physics of Molecular Beam Epitaxv",
E.H.C. Parker ed. (Plenum, New York, 1985), p. 83
M. Ilegems
Applications of selectively-doped two-dimensional electron layers,
Helv. Phys. Acta 58, 383 (1985)
P.K. Bhattacharya, H.J. Bühlmann, M. Ilegems, J.L. Staehli
Impurity and defect level characterization of Be-doped GaAs grown by molecular beam epitaxy,
J. Appl.Phys. 53, 6391 (1982)
W.T. Tsang, R.A. Logan, M. Ilegems
High power fundamental transverse mode strip buried heterostructure lasers wih linear light-current characteristics, Appl. Phys. Lett. 32, 311 (1978)
M. Ilegems, B. Schwartz, L.A. Koszi, R.L. Miller
Integrated multi-junction GaAs photodetector with high output voltage,
Appl. Phys. Lett. 33, 629 (1978)
W.T. Tsang, M. Ilegems
Selective area growth of GaAs/AlGaAs multilayer structures wih molecular beam epitaxy using Si shadow masks, Appl. Phys. Lett. 31, 301 (1977)
M. Ilegems
Be doping and diffusion in molecular beam epitaxy of GaAs and Al.3Ga.7As,
J. Appl. Phys. 48, 1278 (1977)
J.P. Van der Ziel, M. Ilegems
Optical second harmonic generation in periodic multilayer GaAs - AlGaAs structures,
Appl. Phys. Lett. 28, 437 (1976)
A.S. Jordan, M. Ilegems
Solid-liquid equilibria for quaternary solid solutions in the regular solution approximation
J. Phys. Chem. Solids 36, 329 (1975)
M. Ilegems, R. Dingle
Acceptor incorporation in GaAs grown by molecular beam epitaxy,
Proc. 5th Int. Symp. on GaAs (Institute of Physics, London, 1975), p.1
M. Ilegems, R. Dingle, L.W. Rupp
Optical and electrical properties of Mn-doped GaAs grown by molecular beam epitaxy,
J. Appl. Phys. 46, 3059 (1975)
H.C. Casey, S. Somekh, M. Ilegems
Room temperature operation of low threshold separate-confinement heterostructure injection laser with distributed feedback, Appl. Phys. Lett. 27, 142 (1975)
J.P. Van der Ziel, M. Ilegems
Multilayer AlGaAs - GaAs dielectric quarter-wave stacks grown by MBE,
Appl. Optics, 14, 2627 (1975)
M. Ilegems, M.B. Panish
Phase equilibria in III-V quaternary systems -Application to Al-Ga-P-As,
J. Phys. Chem. Solids 35, 409 (1974)
M. Ilegems, H.C. Montgomery
Electrical properties of n-type vapor grown GaN,
J. Phys. Chem Solids 34, 885 (1973)
A.S. Barker, M. Ilegems
Infrared lattice vibrations and free electron dispersion in GaN,
Phys. Rev. B7, 743 (1973)
M. Ilegems
Vapor epitaxy of GaN,
J. Crystal Growth 13/14, 360 (1972)
M. Ilegems, R. Dingle, R.A. Logan
Luminescence of Zn- and Cd- doped GaN,
J. Appl. Phys. 43, 3797 (1972)
M.B. Panish, M. Ilegems
Phase equilibria in ternary III-V systems, in "Progress in Solid State Chemistry" Vol. 7,
H. Reiss, J.O. Mc Caldin eds. (Pergamon Press, New York, 1972), p. 39
R. Dingle, D.D. Sell, S.E. Stokowski, M. Ilegems
Absorption, reflectance and luminescence of GaN epitaxial layers,
Phys. Rev. B4, 1211 (1971)
R. Dingle, M. Ilegems
Donor-acceptor pair recombination in GaN,
Solid State Commun. 2, 175 (1971 )
M. Ilegems, G.L. Pearson
Infrared reflectance spectra of Al-Ga-As mixed crystals,
Phys. Rev. Bl, 1576 (1970)
Patents
Liquid phase diffusion technique
Marc llegems, Morton B. Panish
United States Patent US 3,725,149
Integrated optical detectors
Marc Ilegems, Louis A. Koszi, Bertram Schwartz
United States Patent US 4,127,862
Buried double heterostructure laser device
Robert L. Hartman, Marc Ilegems, Louis A. Koszi, Wilfried R. Wagner
United States Patent US 4,230,997
Nonvolatile MOSFET EEPROM cell
Bühlmann H.J., Olcer M., Ilegems M.
Swiss Patent CH 665918-A 1988-19086
Electroluminescent device for screen of portable computer or television
Ilegems M., Schaer M., Zuppiroli L.
European Patent WO 9738558-A; EP 891686-A
Lattice-matched AlInN/GaN for optoelectronic devices
Carlin J.-F., Ilegems M.
United States Patent application US 2007-003697A1 / 2007-21799
Doctoral Thesis Advisor
Dorsaz, Julien
Lattice-matched allnN alloys for nitride-based optoelectronic devices (2006)
Joray, Reto
Microcavity light emitting diodes in the visible red and near infrared wavelength range (2004)
Badilita, Vlad
Study of vertical coupled-cavity laser structures (2004)
Zellweger, Christoph
Realization of GaN-based light emitting devices (2003)
Wagner, Volker
Growth of GaN by hydride vapor phase epitaxy (2001)
Ochoa, Daniel
Diodes électroluminescentes planaires à haut rendement d'extraction lumineuse (2001)
Brunner, Marcel
Design and characterization of single and dual cavity oxide-apertured VCSELs (2000)
Royo, Paul
Light extraction from microcavity light emitting diodes : optimization and characterization of high-brightness AlGaInP-based devices (2000)
Giovangrandi, Laurent
Biopatterning of neural cells on microelectrode arrays (1999)
Dill, Christian
Fabrication and characterization of high efficiency microcavity light emitting diodes (1999)
Gotza, Martin
Fabrication and optical characterization of silicon nanowires (1997)
Bouvet, Didier
Etude et optimisation de couches minces de SiO2 nitrurées sous N2O (1997)
Spicher, Jacques
Photorécepteurs 1,3-1,55 mm obtenus par intégration monolithique de photodiodes p-i-n et de transisitors HEMT (1996)
Beck, Mattias
Growth and characterization of strained InAlAs/InGaAs heterostructures for high-frequency applications (1996)
Haddab, Youcef
Etude des niveaux profonds dans des transistors à gaz bidimensionnel d'électrons sur des substrats de GaAs et InP (1995)
Gailhanou, Marc
Etude de la structure latérale de monocristaux semiconducteurs par diffraction de rayons X triple crystal (1995)
Oesterle, Ursula
Growth and characterization of novel vertical emitting semiconductor structures (1994)
Hugi, Johannes
Ultrafast MSM photodetectors on InGaAs/GaAs superlattices (1994)
Carlin, Jean-François
Chemical beam epitaxy of GaInAsP quaternary compounds for optoelectronic devices (1993)
Baeta Moreira, Marcus Vinicius
Epitaxie et caractérisation d'hétérostructures à canal InGaAs ou superréseau InAs / GaAs sur substrat GaAs (1992)
Gueissaz, François
Etude et réalisation de transistors à effet de champ à hétérojonctions AlInAs / GaInAs / InP pour les applications en hyperfréquences (1992)
Zirngibl, Martin
High speed photodetectors on strained superlattices (1990)
Manthey, Jacek Tadeusz
Degradation of thin silicon dioxide films and eeprom cells(1990)
Acovic, Alexandre
Hot electron degradation in short-channel MOS transistors (1989)
Théron, Didier
Etude de TEGFETs multicanaux (1989)
Zimmermann, Piller Beate
Modeling of III-V semiconductor devices (1989)
Bischoff, Jean-Claude
Composants ultra-rapides pour communications optiques (1988)
Achtnich, Thomas Martin
Charakterisierung von Defekten in epitaktischem ALGaAs, hergestellt mittels Molekularstrahlen (1988)
Marclay, Etienne
Transport and tunneling through small potential barriers in III-V semiconductor heterostructures (1988)
Fazan, Pierre-Christophe
Fabrication et caractérisation de couches diélectriques minces utilisées en technologie MOS (1988)
Olcer, Murat
Injection, conduction et piégeage de charges dans l'oxyde de silicium (1985)
Nottenburg, Richard Norman
Molecular beam epitaxy of GaAs and AlGaAs and application to heterojunction phototransistors (1984)
Teaching & PhD
Dissertations
Dorsaz, Julien
Lattice-matched allnN alloys for nitride-based optoelectronic devices (2006)
Joray, Reto
Microcavity light emitting diodes in the visible red and near infrared wavelength range (2004)
Badilita, Vlad
Study of vertical coupled-cavity laser structures (2004)
Zellweger, Christoph
Realization of GaN-based light emitting devices (2003)
Wagner, Volker
Growth of GaN by hydride vapor phase epitaxy (2001)
Ochoa, Daniel
Diodes électroluminescentes planaires à haut rendement d'extraction lumineuse (2001)
Brunner, Marcel
Design and characterization of single and dual cavity oxide-apertured VCSELs (2000)
Royo, Paul
Light extraction from microcavity light emitting diodes : optimization and characterization of high-brightness AlGaInP-based devices (2000)
Giovangrandi, Laurent
Biopatterning of neural cells on microelectrode arrays (1999)
Dill, Christian
Fabrication and characterization of high efficiency microcavity light emitting diodes (1999)
Gotza, Martin
Fabrication and optical characterization of silicon nanowires (1997)
Bouvet, Didier
Etude et optimisation de couches minces de SiO2 nitrurées sous N2O (1997)
Spicher, Jacques
Photorécepteurs 1,3-1,55 mm obtenus par intégration monolithique de photodiodes p-i-n et de transisitors HEMT (1996)
Beck, Mattias
Growth and characterization of strained InAlAs/InGaAs heterostructures for high-frequency applications (1996)
Haddab, Youcef
Etude des niveaux profonds dans des transistors à gaz bidimensionnel d'électrons sur des substrats de GaAs et InP (1995)
Gailhanou, Marc
Etude de la structure latérale de monocristaux semiconducteurs par diffraction de rayons X triple crystal (1995)
Oesterle, Ursula
Growth and characterization of novel vertical emitting semiconductor structures (1994)
Hugi, Johannes
Ultrafast MSM photodetectors on InGaAs/GaAs superlattices (1994)
Carlin, Jean-François
Chemical beam epitaxy of GaInAsP quaternary compounds for optoelectronic devices (1993)
Baeta Moreira, Marcus Vinicius
Epitaxie et caractérisation d'hétérostructures à canal InGaAs ou superréseau InAs / GaAs sur substrat GaAs (1992)
Gueissaz, François
Etude et réalisation de transistors à effet de champ à hétérojonctions AlInAs / GaInAs / InP pour les applications en hyperfréquences (1992)
Zirngibl, Martin
High speed photodetectors on strained superlattices (1990)
Manthey, Jacek Tadeusz
Degradation of thin silicon dioxide films and eeprom cells(1990)
Acovic, Alexandre
Hot electron degradation in short-channel MOS transistors (1989)
Théron, Didier
Etude de TEGFETs multicanaux (1989)
Zimmermann, Piller Beate
Modeling of III-V semiconductor devices (1989)
Bischoff, Jean-Claude
Composants ultra-rapides pour communications optiques (1988)
Achtnich, Thomas Martin
Charakterisierung von Defekten in epitaktischem ALGaAs, hergestellt mittels Molekularstrahlen (1988)
Marclay, Etienne
Transport and tunneling through small potential barriers in III-V semiconductor heterostructures (1988)
Fazan, Pierre-Christophe
Fabrication et caractérisation de couches diélectriques minces utilisées en technologie MOS (1988)
Olcer, Murat
Injection, conduction et piégeage de charges dans l'oxyde de silicium (1985)
Nottenburg, Richard Norman
Molecular beam epitaxy of GaAs and AlGaAs and application to heterojunction phototransistors (1984)
