Christian Enz
+41 21 695 45 30
EPFL › STI › STI-SMT › SMT-ENS
Expertise
MEMS-Based IC Design
Wireless Sensor Networks
Semiconductor Device Modeling
Noise in Devices and Circuits
Inexact and Error Tolerant Circuits and Systems
Links
Expertise
MEMS-Based IC Design
Wireless Sensor Networks
Semiconductor Device Modeling
Noise in Devices and Circuits
Inexact and Error Tolerant Circuits and Systems
Links
Publications représentatives
An ultralow-power UHF transceiver integrated in a standard digital CMOS process: Architecture and receiver.
Porret, A. S., T. Melly, et al.
Published in Ieee Journal of Solid-State Circuits 36(3): 452-466., 2001 in
Addition to
Melly, T., A. S. Porret, et al.
Published in An analysis of flicker noise rejection in low-power and low-voltage CMOS mixers. Ieee Journal of Solid-State Circuits 37(8): 1090-1090., 2002 in
A 1.5-V 75-dB dynamic range third-order G(m)-C filter integrated in a 0.18-mu m standard digital CMOS process.
Yodprasit, U. and C. C. Enz
Published in Ieee Journal of Solid-State Circuits 38(7): 1189-1197., 2003 in
Enseignement et PhD
A dirigé les thèses EPFL de
Mihaela Grigorie (1997), Rafael Fried (1998), Matthias Bucher (2000), Manfred Punzenberger (2000), Uroschanit Yodprasit (2006), Nicola Scolari (2007), Ananda Sankar Roy (2007), Jérémie Chabloz (2008), Matteo Contaldo (2011), Aravind Prasad Heragu Singaiyengar (2013), Viswanathan Balasubramanian (2013), Anurag Mangla (2014), Raghavasimhan Thirunarayanan (2016), Maria-Anna Chalkiadaki (2016), Assim Boukhayma (2016), Vladimir Kopta (2018), Huaiqi Huang (2018), Jérémy Schlachter (2018), Vincent Camus (2019), Antonino Caizzone (2020), Raffaele Capoccia (2020), Chunmin Zhang (2021), Francesco Chicco (2021), Arnout Beckers (2021), Sammy Cerida (2023)
A co-dirigé les thèses EPFL de
Thierry Bernard Melly (2000), Alain-Serge Porret (2002), Dominique Python (2002), Frédéric Zanella (2014), Hung-Chi Han (2024)
Cours
Fundamentals of analog VLSI design
EE-424
Ce cours présente la conception de circuits intégrés analogiques CMOS basse consommation en utilisant le concept de coefficient d'inversion basé sur le modèle EKV du transistor MOS. Il couvre la modélisation, les circuits élémentaires et plus complexes (amplificateurs, circuits à capacités commutées