Nava Setter
Nationalité: Swiss and Israeli
Expertise
Electroceramics
Piezoelectrics
Ferroelectrics
Publications représentatives
Direct observation of inversely polarized frozen nanodomains in fatigued ferroelectric memory capacitors.
Colla, E. L., I. Stolichnov, et al.
Published in Applied Physics Letters 82(10): 1604-1606., 2003 in
Imaging by time-of-flight secondary ion mass spectrometry of plasma patterned metal and oxide thin films.
Coullerez, G., J. Baborowski, et al.
Published in Applied Surface Science 203: 527-531., 2003 in
New sol-gel route for processing of PMN thin films.
Parola, S., R. Khem, et al.
Published in Journal of Sol-Gel Science and Technology 26(1-3): 1109-1112., 2003 in
Ferroelectric materials for microwave tunable applications
A.K. Tagantsev, V.O. Sherman, K.F. Astafiev, J. Venkatesh, N. Setter
Published in Journal of Electroceramics 11 (2003) 5-66 in
Ferroelectric gate for control of transport properties of two-dimensional electron gas at AlGaN/GaN heterostructures
I. Stolichnov, L. Malin, P. Muralt, N. Setter
Published in Applied Phys. Letters 88 (2006) 043512-1 - 043512-3 in
Extension of the dielectric tenability range in ferroelectric materials by electric bias field antiparallel to polarization
M. Budimir, D. Damjanovic, N. Setter
Published in Applied Phys. Letters 88 (2006) 082903-1 – 082903-3 in
Control of Self-Polarization in Doped Single Crystalline Pb(Zr0.5Ti0.5)O-3 Thin Films
Integrated Ferroelectrics. 2022. DOI : 10.1080/10584587.2022.2102807.Theoretical estimation of the linear electro-optic effect in compressively strained c-domain (Ba, Sr)TiO3 thin films using a phenomenological thermodynamic model
Journal Of The Ceramic Society Of Japan. 2019. DOI : 10.2109/jcersj2.19011.Charge screening strategy for domain pattern control in nano-scale ferroelectric systems
Scientific Reports. 2017. DOI : 10.1038/s41598-017-05475-x.Nanoscale Defect Engineering and the Resulting Effects on Domain Wall Dynamics in Ferroelectric Thin Films
Advanced Functional Materials. 2017. DOI : 10.1002/adfm.201605196.Domain nucleation behavior in ferroelectric films with thin and ultrathin top electrodes versus insulating top layers
Thin Solid Films. 2017. DOI : 10.1016/j.tsf.2017.04.046.Static negative capacitance of a ferroelectric nano-domain nucleus
Applied Physics Letters. 2017. DOI : 10.1063/1.4989391.Dynamics of ferroelectric 180 degrees domain walls at engineered pinning centers
Applied Physics Letters. 2017. DOI : 10.1063/1.4993576.Neel-like domain walls in ferroelectric Pb(Zr,Ti)O-3 single crystals
Nature Communications. 2016. DOI : 10.1038/ncomms12385.Controlled creation and displacement of charged domain walls in ferroelectric thin films
Scientific Reports. 2016. DOI : 10.1038/srep31323.Asymmetric structure of 90 deg. domain walls and interactions with defects in PbTiO3
Physical Review B. 2016. DOI : 10.1103/PhysRevB.93.144102.Velocity Control of 180 degrees Domain Walls in Ferroelectric Thin Films by Electrode Modification
Nano Letters. 2016. DOI : 10.1021/acs.nanolett.5b02798.Free-Carrier-Compensated Charged Domain Walls Produced with Super-Bandgap Illumination in Insulating Ferroelectrics
Advanced Materials. 2016. DOI : 10.1002/adma.201602874.Single-domain (110) PbTiO3 thin films: Thermodynamic theory and experiments
Physical Review B. 2016. DOI : 10.1103/PhysRevB.93.144113.Piezoelectric enhancement under negative pressure
Nature Communications. 2016. DOI : 10.1038/ncomms12136.Structure and pressure-induced ferroelectric phase transition in antiphase domain boundaries of strontium titanate from first principles
Physical Review B. 2016. DOI : 10.1103/PhysRevB.94.054102.The variation of PbTiO3 bandgap at ferroelectric phase transition
Journal of Physics: Condensed Matter. 2016. DOI : 10.1088/0953-8984/28/2/025501.Thin-film-specific elastic effects in ferroelectric domain structures
Lausanne, EPFL, 2016. DOI : 10.5075/epfl-thesis-6953.Engineered a/c domain patterns in multilayer (110) epitaxial Pb(Zr,Ti)O-3 thin films: Impact on domain compliance and piezoelectric properties
Aip Advances. 2016. DOI : 10.1063/1.4948795.Internal electrical and strain fields influence on the electrical tunability of epitaxial Ba0.7Sr0.3TiO3 thin films
Applied Physics Letters. 2016. DOI : 10.1063/1.4944997.Strain Engineering of Electrical Conductivity in Epitaxial Thin Ba0.7Sr0.3TiO3 Film Heterostructures
Lithuanian Journal Of Physics. 2016.What is a ferroelectric-a materials designer perspective
Ferroelectrics. 2016. DOI : 10.1080/00150193.2016.1232104.Monocrystalline PZT thin films : toward controlled growth and controlled domain patterns
Lausanne, EPFL, 2015. DOI : 10.5075/epfl-thesis-6654.Towards room-temperature deterministic ferroelectric control of ferromagnetic thin films
Lausanne, EPFL, 2015. DOI : 10.5075/epfl-thesis-6904.Polarization Switching and Domain Wall Motion in Circular and Ring Capacitor Structures in PZT Thin Films
Ferroelectrics. 2015. DOI : 10.1080/00150193.2015.1012421.Negative-pressure-induced enhancement in a freestanding ferroelectric
Nature Materials. 2015. DOI : 10.1038/Nmat4365.Post-deposition control of ferroelastic stripe domains and internal electric field by thermal treatment
Applied Physics Letters. 2015. DOI : 10.1063/1.4906295.Moving antiphase boundaries using an external electric field
Applied Physics Letters. 2015. DOI : 10.1063/1.4935122.Formation of charged ferroelectric domain walls with controlled periodicity
Scientific Reports. 2015. DOI : 10.1038/srep15819.Non-volatile polarization switch of magnetic domain wall velocity
Applied Physics Letters. 2015. DOI : 10.1063/1.4937999.Polarity of translation boundaries in antiferroelectric PbZrO3
Materials Research Bulletin. 2015. DOI : 10.1016/j.materresbull.2014.11.024.Quantum properties of charged ferroelectric domain walls
Physical Review B. 2015. DOI : 10.1103/PhysRevB.92.214112.In Search of Ferroelectricity in Antiferroelectric Lead Zirconate
Lausanne, EPFL, 2015. DOI : 10.5075/epfl-thesis-6504.Room temperature concurrent formation of ultra-dense arrays of ferroelectric domain walls
Applied Physics Letters. 2015. DOI : 10.1063/1.4932524.Effective-surface-energy approach for size effects in ferroics
Physical Review B. 2015. DOI : 10.1103/PhysRevB.91.125432.Anomalously thick domain walls in ferroelectrics
Physical Review B. 2015. DOI : 10.1103/PhysRevB.91.060102.Polarization charge as a reconfigurable quasi-dopant in ferroelectric thin films
Nature Nanotechnology. 2015. DOI : 10.1038/Nnano.2015.114.Thickness Dependence of Domain-Wall Patterns in BiFeO3 Thin Films
Ferroelectrics. 2015. DOI : 10.1080/00150193.2015.1012414.Bent Ferroelectric Domain Walls as Reconfigurable Metallic-Like Channels
Nano Letters. 2015. DOI : 10.1021/acs.nanolett.5b03450.Controlling domain wall motion in ferroelectric thin films
Nature Nanotechnology. 2015. DOI : 10.1038/Nnano.2014.320.Anomalously thick domain walls in ferroelectrics (vol 91, 060102, 2015)
Physical Review B. 2015. DOI : 10.1103/PhysRevB.91.059903.Influence of flexoelectric coupling on domain patterns in ferroelectrics
Physical Review B. 2014. DOI : 10.1103/PhysRevB.89.174105.Lattice dynamics and antiferroelectricity in PbZrO3 tested by x-ray and Brillouin light scattering
Physical Review B. 2014. DOI : 10.1103/PhysRevB.90.144301.Closed-circuit domain quadruplets in BaTiO3 nanorods embedded in a SrTiO3 film
Physical Review B. 2014. DOI : 10.1103/PhysRevB.89.060101.Controlled stripes of ultrafine ferroelectric domains
Nature Communications. 2014. DOI : 10.1038/ncomms5677.Superdomain Structure in Epitaxial Tetragonal PZT Thin Films Under Tensile Strain
Ferroelectrics. 2014. DOI : 10.1080/00150193.2014.893802.Effect of elastic compliances and higher order Landau coefficients on the phase diagram of single domain epitaxial Pb(Zr, Ti)O-3 (PZT) thin films
Aip Advances. 2014. DOI : 10.1063/1.4905265.Analysis of composition homogeneity and polarization orientation of PZT submicron fibers by micro-Raman spectroscopy
Journal Of The European Ceramic Society. 2014. DOI : 10.1016/j.jeurceramsoc.2014.02.030.Compliant ferroelastic domains in epitaxial Pb(Zr, Ti)O-3 thin films
Applied Physics Letters. 2014. DOI : 10.1063/1.4874835.Solid Solutions of Lead Metaniobate-Stabilization of the Ferroelectric Polymorph and the Effect on the Lattice Parameters, Dielectric, Ferroelectric, and Piezoelectric Properties
Journal of the American Ceramic Society. 2014. DOI : 10.1111/jace.12628.Elastic Coupling between Nonferroelastic Domain Walls
Physical Review Letters. 2014. DOI : 10.1103/PhysRevLett.113.207601.Persistent conductive footprints of 109 degrees domain walls in bismuth ferrite films
Applied Physics Letters. 2014. DOI : 10.1063/1.4869851.Ferroelectric control of magnetic domains in ultra-thin cobalt layers
Applied Physics Letters. 2013. DOI : 10.1063/1.4833495.The origin of antiferroelectricity in PbZrO3
Nature Communications. 2013. DOI : 10.1038/ncomms3229.Domain wall conduction in bismuth ferrite thin films
Lausanne, EPFL, 2013. DOI : 10.5075/epfl-thesis-5654.(Co-Ti-O)/Bi-Ti-O Multilayer Films with High-Frequency Electromagnetic Response
Japanese Journal of Applied Physics. 2013. DOI : 10.7567/Jjap.52.09Ka14.Bistability of ferroelectric domain walls: Morphotropic boundary and strain effects
Physical Review B. 2013. DOI : 10.1103/PhysRevB.88.024102.Free-electron gas at charged domain walls in insulating BaTiO3
Nature Communications. 2013. DOI : 10.1038/ncomms2839.Defect ordering and defect-domain-wall interactions in PbTiO3: A first-principles study
Physical Review B. 2013. DOI : 10.1103/PhysRevB.88.214116.Piezoelectric properties of twinned ferroelectric perovskites with head-to-head and tail-to-tail domain walls
Physical Review B. 2013. DOI : 10.1103/PhysRevB.88.024114.Conductivity and Ferroelectric Hysteresis in Bi4Ti3O12 Single Crystals Around Room Temperature
Ferroelectrics. 2013. DOI : 10.1080/00150193.2013.822725.Structural phase transitions and electronic phenomena at 180-degree domain walls in rhombohedral BaTiO3
Physical Review B. 2013. DOI : 10.1103/PhysRevB.87.054111.Dielectric properties of K(Ta0.55Nb0.45)O-3 Single Crystal
2012. 21st IEEE International Symposium on Applications of Ferroelectrics held jointly with 11th European Conference on the Applications of Polar Dielectrics and 4th Conference on Piezoresponse Force Microscopy and Nanoscale Phenomena in Polar Materials. DOI : 10.1109/ISAF.2012.6297842.Magnetic domain wall propagation under ferroelectric control
Physical Review B. 2012. DOI : 10.1103/PhysRevB.86.235130.Long-term retention in organic ferroelectric-graphene memories
Applied Physics Letters. 2012. DOI : 10.1063/1.3676055.Bichiral structure of ferroelectric domain walls driven by flexoelectricity
Physical Review B. 2012. DOI : 10.1103/PhysRevB.86.134102.Cold-Field Switching in PVDF-TrFE Ferroelectric Polymer Nanomesas
Physical Review Letters. 2012. DOI : 10.1103/PhysRevLett.108.027603.Dielectric and Piezoelectric Properties of K(Ta0.51Nb0.49)O3 Single Crystal
Ferroelectrics. 2012. DOI : 10.1080/00150193.2013.821919.Macroscopic Theory of Charged Domain Walls in Ferroelectrics
Lausanne, EPFL, 2012. DOI : 10.5075/epfl-thesis-5303.Ferroelectric charged domain walls in an applied electric field
Physical Review B. 2012. DOI : 10.1103/PhysRevB.86.104104.Mechanism of hydrothermal growth of ferroelectric PZT nanowires
Journal of Crystal Growth. 2012. DOI : 10.1016/j.jcrysgro.2012.03.022.Polarization screening in polymer ferroelectric films: Uncommon bulk mechanism
Applied Physics Letters. 2012. DOI : 10.1063/1.4754146.Ferroelectric Lead Metaniobate and its Solid Solutions: Solid State Synthesis and Characterization
2012. 21st IEEE International Symposium on Applications of Ferroelectrics held jointly with 11th European Conference on the Applications of Polar Dielectrics and 4th Conference on Piezoresponse Force Microscopy and Nanoscale Phenomena in Polar Materials, Aveiro, PORTUGAL, JUL 09-13, 2012. DOI : 10.1109/ISAF.2012.6297854.Dielectric properties of K(Ta0.53Nb0.47)O-3 Single Crystal
2012. 21st IEEE International Symposium on Applications of Ferroelectrics held jointly with 11th European Conference on the Applications of Polar Dielectrics and 4th Conference on Piezoresponse Force Microscopy and Nanoscale Phenomena in Polar Materials. DOI : 10.1109/ISAF.2012.6297842.Enhanced electromechanical response of ferroelectrics due to charged domain walls
Nature Communications. 2012. DOI : 10.1038/ncomms1751.Non-volatile ferroelectric gating of magnetotransport anisotropy in (Ga,Mn)(As,P)
Applied Physics Letters. 2012. DOI : 10.1063/1.4731245.Impact of Strain Effects on the Stability of Ising Walls in Ferroelectrics
Ferroelectrics. 2012. DOI : 10.1080/00150193.2012.744213.Polarization Reversal in BiFeO3 Capacitors: Complex Behavior Revealed by PFM
Ferroelectrics. 2011. DOI : 10.1080/00150193.2011.594326.Growth-mode induced defects in epitaxial SrTiO3 thin films grown on single crystal LaAlO3 by a two-step PLD process
Journal of Materials Research. 2011. DOI : 10.1557/jmr.2010.82.Polarization Screening in Multiferroic (Ga,Mn)As/P(VDF-TrFE) Transistors
Ferroelectrics. 2011. DOI : 10.1080/00150193.2011.594738.Ferroelectric polymer gates for non-volatile field effect control of ferromagnetism in (Ga, Mn)As layers
Nanotechnology. 2011. DOI : 10.1088/0957-4484/22/25/254004.Structure Determination and Compositional Modification of Body-Centered Tetragonal PX-Phase Lead Titanate
Chemistry of Materials. 2011. DOI : 10.1021/cm1030206.Size effect in ferroelectrics: Competition between geometrical and crystalline symmetries
Physical Review B. 2011. DOI : 10.1103/PhysRevB.83.014104.Head-to-head and tail-to-tail 180^{°} domain walls in an isolated ferroelectric
Physical Review B. 2011. DOI : 10.1103/PhysRevB.83.184104.Thermally Induced Cooperative Molecular Reorientation and Nanoscale Polarization Switching Behaviors of Ultrathin Poly(vinylidene fluoride-trifluoroethylene) Films
The Journal of Physical Chemistry B. 2011. DOI : 10.1021/jp2061442.Control of the Screening Ability at a Ferroelectric-Semiconductor Interface
Ferroelectrics. 2011. DOI : 10.1080/00150193.2011.594410.Unusual dielectric behavior and domain structure in rhombohedral phase of BaTiO3 single crystals
Journal of Applied Physics. 2011. DOI : 10.1063/1.3605494.Adsorbate-localized states at water-covered (100) SrTiO[sub 3] surfaces
Applied Physics Letters. 2011. DOI : 10.1063/1.3529473.Improved Screening Ability of Ferroelectric-Semiconductor Interface
2011. Joint Meeting of the 19th IEEE International Symposium on the Applications of Ferroelectrics/10th European Conference on the Applications of Polar Dielectrics, Edinburgh, SCOTLAND, Aug 09-12, 2010. p. 1959 - 1961. DOI : 10.1109/TUFFC.2011.2037.Enhanced Curie temperature and nonvolatile switching of ferromagnetism in ultrathin (Ga,Mn)As channels
Physical Review B. 2011. DOI : 10.1103/PhysRevB.83.115203.Integration of Coplanar Barium-Strontium Titanate Tunable Capacitors on Micro-Machined Silicon
2010. International Conference on Electroceramics (ICE-2009), Delhi, INDIA, Dec 13-17, 2009. p. 110 - 119. DOI : 10.1080/10584587.2010.488560.Antiferrodistortive Structural Phase Transition in Compressively-Strained Epitaxial SrTiO3 Film Grown on (La, Sr)(Al, Ta)O-3 Substrate
2010. International Conference on Electroceramics (ICE-2009), Delhi, INDIA, Dec 13-17, 2009. p. 57 - 62. DOI : 10.1080/10584587.2010.488545.Structural Property and Electric Field Response of a Single Perovskite PbTiO3 Nanowire Using Micro X-ray Beam
Japanese Journal Of Applied Physics. 2010. DOI : 10.1143/JJAP.49.09MC09.Tunable thin film bulk acoustic wave resonator based on BaxSr1-xTiO3 thin film
IEEE Transactions on Ultrasonics, Ferroelectrics and Frequency Control. 2010. DOI : 10.1109/TUFFC.2010.1417.Low-Symmetry Phases in Ferroelectric Nanowires
Nano Letters. 2010. DOI : 10.1021/nl9034708.Electrical tuning of dc bias induced acoustic resonances in paraelectric thin films (vol 104, 094102, 2008)
Journal of Applied Physics. 2010. DOI : 10.1063/1.3357393.Ferroelectric Polymer Gate Transistor as a Model System for Exploring the Mechanisms of the Retention Loss
2010. Joint Meeting of 12th International Meeting on Ferroelectricity/18th IEEE International Symposium on Applications of Ferroelectrics (IMF-ISAF-2009), Xian, PEOPLES R CHINA, Aug 23-27, 2009. p. 185 - 189. DOI : 10.1080/00150193.2010.486237.PFM investigation of stress induced ferroelastic switching in piezoelectric bulk ceramics
2010. 2010 IEEE International Symposium on the Applications of Ferroelectrics (ISAF), Edinbourgh, Scottland, August 2010. DOI : 10.1109/ISAF.2010.5712232.Ferroelectric Polymer Gates for Persistent Field Effect Control of Ferromagnetism in (Ga,Mn)As Layers
Lausanne, EPFL, 2010. DOI : 10.5075/epfl-thesis-4886.Self-assembled ferroelectric-dielectric nanocomposite films for tunable applications
2010. Conference on Fundamentals and Technology of Multifunctional Oxide Thin Films (Symposium G, EMRS 2009 Spring Meeting), Strasbourg, FRANCE, Jun 08-12, 2009. DOI : 10.1088/1757-899X/8/1/012010.Ferroelectric Nanowires : an Investigation in Synthesis, Characterization, Functionality, and Modeling of Finite Size Effects
Lausanne, EPFL, 2010. DOI : 10.5075/epfl-thesis-4914.Synchrotron X-ray diffraction study on a single nanowire of PX-phase lead titanate
Journal of the European Ceramic Society. 2010. DOI : 10.1016/j.jeurceramsoc.2010.07.014.Strong ferroelectric domain-wall pinning in BiFeO3 ceramics
Journal of Applied Physics. 2010. DOI : 10.1063/1.3490249.Anomalous dielectric peak in Mg and Li doped ZnO ceramics and thin films
Applied Physics Letters. 2010. DOI : 10.1063/1.3505930.Structural complexity of (Na0.5Bi0.5)TiO3-BaTiO3 as revealed by Raman spectroscopy
Physical Review B. 2010. DOI : 10.1103/PhysRevB.82.104112.Cation-site intrinsic defects in Zn-doped CdTe
Physical Review B. 2010. DOI : 10.1103/PhysRevB.81.075215.The stress-assisted enhancement of piezoelectric properties due to mechanically incompatible domain structures in BaTiO3
2010. 2010 IEEE International Symposium on the Applications of Ferroelectrics (ISAF), Edinbourgh, Scottland, August 2010. DOI : 10.1109/ISAF.2010.5712237.Effect of mechanical loading on the tuning of acoustic resonances in Ba (x) Sr1-x TiO3 thin films
Journal Of Electroceramics. 2010. DOI : 10.1007/s10832-009-9564-0.Preface to Special Topic: Invited Papers from the International Symposium on Piezoresponse Force Microscopy and Nanoscale Phenomena in Polar Materials, Aveiro, Portugal, 2009
Journal of Applied Physics. 2010. DOI : 10.1063/1.3474648.A hybrid density functional study of lithium in ZnO: Stability, ionization levels, and diffusion
Physical Review B. 2009. DOI : 10.1103/PhysRevB.80.195205.Intrinsic defects in CdTe and CdZnTe alloys
Physica B: Condensed Matter. 2009. DOI : 10.1016/j.physb.2009.08.251.Structure and Energy of Charged Domain Walls in Ferroelectrics
2009. 18th IEEE International Symposium on Applications of Ferroelectrics, Xian, PEOPLES R CHINA, Aug 23-27, 2009. p. 37 - 42. DOI : 10.1109/ISAF.2009.5307622.Special Issue on: International Conference on Electroceramics
Journal Of Electroceramics. 2009. DOI : 10.1007/s10832-008-9498-y.Properties and phase transitions in lead free piezoelectrics : (K,Na)NbO3-LiNbO3 and (Bi,Na)TiO3-BaTiO3
Lausanne, EPFL, 2009. DOI : 10.5075/epfl-thesis-4528.Self-Assembled Perovskite-Fluorite Oblique Nanostructures for Adaptive (Tunable) Electronics
Advanced Materials. 2009. DOI : 10.1002/adma.200800253.HREM studies of twins in Cd1−xZnxTe (x ≈ 0.04) thin films grown by molecular beam epitaxy
Journal of Alloys and Compounds. 2009. DOI : 10.1016/j.jallcom.2009.05.036.Micromachined tunable devices based on silicon integrated BaxSr1-xTiO3 thin films : concepts, fabrication and characterization
Lausanne, EPFL, 2009. DOI : 10.5075/epfl-thesis-4284.Erratum: Evidence for dielectric aging due to progressive 180° domain wall pinning in polydomain Pb(Zr0.45Ti0.55)O3 thin films [Phys. Rev. B 79, 054104 (2009)]
Physical Review B. 2009. DOI : 10.1103/PhysRevB.79.219903.Electromechanics on the Nanometer Scale: Emerging Phenomena, Devices, and Applications
MRS Bulletin. 2009. DOI : 10.1557/mrs2009.174.Polar phonons in some compressively stressed epitaxial and polycrystalline SrTiO3 thin films
Journal of Electroceramics. 2009. DOI : 10.1007/s10832-008-9494-2.Control of Ferromagnetism in a (Ga,Mn)As - Based Multiferroic System via a Ferroelectric Gate
2009. 29th International Conference on Physics of Semiconductors, Rio de Janeiro, BRAZIL, Jul 27-Aug 01, 2008. p. 471 - 472. DOI : 10.1063/1.3295510.Evidence for dielectric aging due to progressive 180 degrees domain wall pinning in polydomain Pb(Zr0.45Ti0.55)O-3 thin films
Physical Review B. 2009. DOI : 10.1103/PhysRevB.79.054104.Toward a low-voltage multiferroic transistor: Magnetic (Ga,Mn)As under ferroelectric control
Applied Physics Letters. 2009. DOI : 10.1063/1.3076107.Non-180° domains in LiTaO3 thin films deposited by metal organic chemical vapor deposition
Applied Physics Letters. 2009. DOI : 10.1063/1.3204451.Retention in nonvolatile silicon transistors with an organic ferroelectric gate
Applied Physics Letters. 2009. DOI : 10.1063/1.3158959.Large-scale fabrication of titanium-rich perovskite PZT submicro/nano wires and their electromechanical properties
IEEE Transactions on Ultrasonics, Ferroelectrics and Frequency Control. 2009. DOI : 10.1109/TUFFC.2009.1254.Li-related defects in ZnO : hybrid functional calculations
Physica B: Condensed Matter. 2009. DOI : 10.1016/j.physb.2009.08.165.Reliability study of tunable ferroelectric capacitors
Journal of Applied Physics. 2008. DOI : 10.1063/1.2978353.Raman spectroscopy of (K,Na)NbO3 and (K,Na)(1-x)LixNbO3
Applied Physics Letters. 2008. DOI : 10.1063/1.3056658.La0.5Sr0.5Fe1-yMyO3-[delta] (M = Ti, Ta) perovskite oxides for oxygen separation membranes
Lausanne, EPFL, 2008. DOI : 10.5075/epfl-thesis-4137.1T Memory Cell Based on PVDF-TrFE Field Effect Transistor
2008. Material Research Society Spring meeting 2008, MRS 2008. p. 1067 - B03. DOI : 10.1557/PROC-1067-B03-02.Surface-stimulated phenomena in the polarization response of ferroelectrics
Lausanne, EPFL, 2008. DOI : 10.5075/epfl-thesis-4082.Polarisation reversal in ferroelectric PVDF and PZT films
Lausanne, EPFL, 2008. DOI : 10.5075/epfl-thesis-4097.High-temperature instability of Li- and Ta-modified (K,Na)NbO3 piezoceramics
Journal of the American Ceramic Society. 2008. DOI : 10.1111/j.1551-2916.2008.02392.x.Size effect in metal/ferroelectric/metal heterostructures:Depolarizing effect vs. short-range coupling
2008. 17th IEEE International Symposium on the Applications of Ferroelectrics, Feb 23-28 2008. DOI : 10.1109/ISAF.2008.4693765.Piezoresponse force microscopy on doubly clamped KNbO3 nanowires
Applied Physics Letters. 2008. DOI : 10.1063/1.3000385.Low voltage Ferroelectric FET with sub-100nm copolymer P(VDF-TrFE) gate dielectric for non-volatile 1T memory
2008. p. 162 - 165. DOI : 10.1109/ESSDERC.2008.4681724.Restricted domain growth and polarization reversal kinetics in ferroelectric polymer thin films
Journal of Applied Physics. 2008. DOI : 10.1063/1.2907990.Ferroelectric control of ferromagnetism in diluted magnetic semiconductors
2008. 17th IEEE International Symposium on Applications of Ferroelectrics, Santa Fe, NM, Feb 23-28, 2008. p. 197 - 198. DOI : 10.1109/ISAF.2008.4693725.Short-range and long-range contributions to the size effect in metal-ferroelectric-metal heterostructures
Physical Review B. 2008. DOI : 10.1103/PhysRevB.77.174111.Electrical tuning of dc bias induced acoustic resonances in paraelectric thin films
Journal of Applied Physics. 2008. DOI : 10.1063/1.2999642.Trends in Ferroelectric/Piezoelectric Ceramics
Piezoelectricity: Evolution and Future of a Technology; Berlin: Springer, 2008. p. 553 - 570.Non-volatile ferroelectric control of ferromagnetism in (Ga, Mn)As
Nature Materials. 2008. DOI : 10.1038/nmat2185.Giant domain wall contribution to the dielectric susceptibility in BaTiO3 single crystals
Applied Physics Letters. 2007. DOI : 10.1063/1.2751135.Growth process approaches for improved properties of tunable ferroelectric thin films
Journal Of The European Ceramic Society. 2007. DOI : 10.1016/j.jeurceramsoc.2007.02.027.Large and stable thickness coupling coefficients of [001](C)-oriented KNbO3 and Li-modified (K,Na)NbO3 single crystals
Applied Physics Letters. 2007. DOI : 10.1063/1.2472524.Tunable ferroelectric thin films with enhanced responses through nano- structural control
2007. 16th IEEE International Symposium on Applications of Ferroelectrics, Nara, Japan, May 27-31, 2007. p. 195 - 197. DOI : 10.1109/ISAF.2007.4393211.Qualitative distinction in enhancement of the piezoelectric response in PbTiO3 in proximity of coercive fields: 90 degrees versus 180 degrees switching
Journal Of Applied Physics. 2007. DOI : 10.1063/1.2733594.Transmission-electron-microscopy study of quasi-epitaxial tungsten-bronze (Sr2.5Ba2.5Nb10O30) thin film on perovskite (SrTO3) single crystal
Journal Of Materials Research. 2007. DOI : 10.1557/jmr.2007.0018.PZT thin film growth and chemical composition control on flat and novel three-dimensional micromachined structures for MEMS devices
Lausanne, EPFL, 2007. DOI : 10.5075/epfl-thesis-3820.Processing and properties of ferroelectric relaxor lead scandium tantalate Pb(Sc1/2Ta1/2)O-3 thin films
Journal Of Materials Research. 2007. DOI : 10.1557/jmr.2007.0023.Quantum well ZnCdTe/CdTe structures with integrated ferroelectric gates
2007. 16th IEEE International Symposium on Applications of Ferroelectrics, Nara, JAPAN, May 27-31, 2007. p. 52 - 53. DOI : 10.1109/ISAF.2007.4393165.Compositional inhomogeneity in Li- and Ta-modified (K, Na)NbO3 ceramics
Journal of the American Ceramic Society. 2007. DOI : 10.1111/j.1551-2916.2007.01962.x.Epitaxial growth of Ba0.3Sr0.7TiO3 thin films on Al2O3(0001) using ultrathin TiN layer as a sacrificial template
Applied Physics Letters. 2007. DOI : 10.1063/1.2719673.Microwave phase shifters based on sol-gel derived Ba0.3Sr0.7TiO3 ferroelectric thin films
2007. 2nd European Microwave Integrated Circuits Conference, Munich, GERMANY, Oct 08-10, 2007. p. 497 - 500. DOI : 10.1109/EMICC.2007.4412758.Rotator and extender ferroelectrics: Importance of the shear coefficient to the piezoelectric properties of domain-engineered crystals and ceramics
Journal Of Applied Physics. 2007. DOI : 10.1063/1.2653925.Processing and dielectric characterization of Ba0.3Sr0.7TiO3 thin films on alumina substrates
Journal Of The European Ceramic Society. 2007. DOI : 10.1016/j.jeurceramsoc.2006.11.020.Annealing effect on dislocations in SrTiO3/LaAlO3 heterostructures
Journal Of Applied Physics. 2007. DOI : 10.1063/1.2710281.Temperature stability of the piezoelectric properties of Li-modified KNN ceramics
Journal Of The European Ceramic Society. 2007. DOI : 10.1016/j.jeurceramsoc.2007.02.100.Ferroelectric domains and piezoelectricity in monocrystalline Pb(Zr,Ti)O-3 nanowires
Applied Physics Letters. 2007. DOI : 10.1063/1.2716842.Landau thermodynamic potential for BaTiO3
Journal Of Applied Physics. 2007. DOI : 10.1063/1.2733744.Preparation and properties of KNbO3-based piezoelectric ceramics
Lausanne, EPFL, 2007. DOI : 10.5075/epfl-thesis-3856.The Impact of chemical ordering on the dielectric properties of lead scandium tantalate Pb(Sc1/2Ta1/2)O-3 thin films
Journal of Applied Physics. 2007. DOI : 10.1063/1.2770834.Ferroelectric Gate on AlGaN/GaN Heterostructures
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2007. 16th IEEE International Symposium on Applications of Ferroelectrics, Nara, JAPAN, May 27-31, 2007. p. 236 - 238. DOI : 10.1109/ISAF.2007.4393226.Uniaxial-stress induced phase transitions in [001](C)-poled 0.955Pb(Zn1/3Nb2/3)O-3-0.045PbTiO(3)
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Physical Review Letters. 2007. DOI : 10.1103/PhysRevLett.99.029901.Ferroelectric polymer gate on AlGaN/GaN heterostructures
Journal of Applied Physics. 2007. DOI : 10.1063/1.2817646.Relation between processing, microstructure and electric field-dependent dielectric properties of Ba0.3Sr0.7TiO3 thin films on alumina substrates
Integrated Ferroelectrics. 2007. DOI : 10.1080/10584580701756334.Ferroelectric gate on AlGaN/GaN heterostructures
Lausanne, EPFL, 2007. DOI : 10.5075/epfl-thesis-3821.Effects of film orientation on ferroelectric and piezoelectric properties of lanthanoid-substituted Bi4Ti3O12 thin films
Japanese Journal of Applied Physics. 2007. DOI : 10.1143/JJAP.46.686.DC bias-dependent shift of the resonance frequencies in BST thin film membranes
IIEEE Transactions on Ultrasonics, Ferroelectrics and Frequency Control. 2007. DOI : 10.1109/TUFFC.2007.565.Microwave phase shifters based on sol-gel derived Ba0.3Sr0.7TiO3 ferroelectric thin films
2007. 37th European Microwave Conference, Munich, GERMANY, Oct 08-12, 2007. p. 1295 - 1298. DOI : 10.1109/EUMC.2007.4405439.First-principles description of ferroelectric/electrode interfaces and properties of not very thin ferroelectric capacitors
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Applied Physics Letters. 2007. DOI : 10.1063/1.2723681.Nonvolatile gate effect in the PZT/AlGaN/GaN heterostructure
Journal Of The European Ceramic Society. 2007. DOI : 10.1016/j.jeurceramsoc.2007.02.150.A study of the phase diagram of (K,Na,Li)NbO3 determined by dielectric and piezoelectric measurements, and Raman spectroscopy
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Physical Review Letters. 2007. DOI : 10.1103/PhysRevLett.98.207601.In-plane versus out-of-plane dielectric response in the thin-film relaxor Pb(Sc1/2Ta1/2)O-3
Physical Review B. 2006. DOI : 10.1103/PhysRevB.73.214112.Self polarization in Pb(Sc1/2Ta1/2)O-3 relaxor thin films: Impact on the dielectric and piezoelectric response
Japanese Journal of Applied Physics. 2006. DOI : 10.1143/JJAP.45.7288.Phase transitions, anisotropy and domain engineering : the piezoelectric properties of relaxor-ferroelectric single crystals
Lausanne, EPFL, 2006. DOI : 10.5075/epfl-thesis-3513.Piezoelectric anisotropy and free energy instability in classic perovskites
Lausanne, EPFL, 2006. DOI : 10.5075/epfl-thesis-3514.Ferroelectric film switching via oblique domain growth observed by cross-sectional nanoscale imaging
Applied Physics Letters. 2006. DOI : 10.1063/1.2338432.Broad-band dielectric response of PbMg1/3Nb2/3O3 relaxor ferroelectrics: Single crystals, ceramics and thin films
Journal Of The European Ceramic Society. 2006. DOI : 10.1016/j.jeurceramsoc.2006.02.003.Ferroelectric gate for control of transport properties of two-dimensional electron gas at AlGaN/GaN heterostructures
Applied Physics Letters. 2006. DOI : 10.1063/1.2168506.In-plane and out-of-plane ferroelectric instabilities in epitaxial SrTiO3 films
Physical Review Letters. 2006. DOI : 10.1103/PhysRevLett.96.157602.Temperature dependence of the direct piezoelectric effect in relaxor-ferroelectric single crystals: Intrinsic and extrinsic contributions
Journal Of Applied Physics. 2006. DOI : 10.1063/1.2358408.Ferroelectric thin films: Review of materials, properties, and applications (vol 100, art no 051606, 2006)
Journal Of Applied Physics. 2006. DOI : 10.1063/1.2393042.Extension of the dielectric tunability range in ferroelectric materials by electric bias field antiparallel to polarization
Applied Physics Letters. 2006. DOI : 10.1063/1.2177350.Anharmonicity of BaTiO3 single crystals
Physical Review B. 2006. DOI : 10.1103/PhysRevB.73.132103.Growth of single-crystalline KNbO3 nanostructures
The Journal of Physical Chemistry B. 2006. DOI : 10.1021/jp053800a.Piezoelectric anisotropy: Enhanced piezoelectric response along nonpolar directions in perovskite crystals
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Journal Of Applied Physics. 2006. DOI : 10.1063/1.2336995.Epitaxial growth of (SrBa)Nb2O6 thin films on SrTiO3 single crystal substrate
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Physical Review B. 2006. DOI : 10.1103/PhysRevB.73.014115.Nonvolatile gate effect in a ferroelectric-semiconductor quantum well
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Applied Physics Letters. 2006. DOI : 10.1063/1.2335582.Epitaxial/amorphous Ba0.3Sr0.7TiO3 film composite structure for tunable applications
Applied Physics Letters. 2006. DOI : 10.1063/1.2226999.Dielectric properties of Zr-modified Pb(Mg1/3Ta2/3)O-3 ceramic: Influence of pressure, biasing electric field, and B-site cationic order
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Physical Review Letters. 2006. DOI : 10.1103/PhysRevLett.96.107603.Piezoelectric response and free-energy instability in the perovskite crystals BaTiO3, PbTiO3, and Pb(Zr,Ti)O-3
Physical Review B. 2006. DOI : 10.1103/PhysRevB.73.174106.Development of relaxor ferroelectric materials for screen-printing on alumina and silicon substrates
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Lausanne, EPFL, 2005. DOI : 10.5075/epfl-thesis-3327.Strain relaxation of epitaxial SrTiO3 thin films on LaAlO3 by two-step growth technique
Applied Physics Letters. 2005. DOI : 10.1063/1.1897047.Growth kinetics of one-dimensional KNbO3 nanostructures by hydrothermal processing routes
The Journal of Physical Chemistry B. 2005. DOI : 10.1021/jp051454r.Ferroelectric and piezoelectric properties of lanthanoid-substituted Bi4Ti3O12 thin films grown on (111)Pt and (100)IrO2 electrodes
Applied Physics Letters. 2005. DOI : 10.1063/1.1915512.Softening and hardening transitions in ferroelectric Pb(Zr,Ti)O3 ceramics
Lausanne, EPFL, 2005. DOI : 10.5075/epfl-thesis-3368.Quasi-Debye microwave loss as an intrinsic limitation of microwave performance of tunable components based on SrTiO3 and BaxSr1-xTiO3 ferroelectrics
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Physical Review B. 2005. DOI : 10.1103/PhysRevB.72.064107.Piezoelectric micromachined ultrasonic transducers based on PZT thin films
IIEEE Transactions on Ultrasonics, Ferroelectrics and Frequency Control. 2005. DOI : 10.1109/TUFFC.2005.1563270.Far-infrared soft-mode behavior in PbSc1/2Ta1/2O3 thin films
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Journal of the European Ceramic Society. 2005. DOI : 10.1016/j.jeurceramsoc.2005.03.086.Domain engineering of the transverse piezoelectric coefficient in perovskite ferroelectrics
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Applied Physics Letters. 2005. DOI : 10.1063/1.1845573.Analytical modeling of the apparent d(33) piezoelectric coefficient determined by the direct quasistatic method for different boundary conditions
IIEEE Transactions on Ultrasonics, Ferroelectrics and Frequency Control. 2005. DOI : 10.1109/TUFFC.2005.1561657.Surface-stimulated nucleation of reverse domains in ferroelectrics
Physical Review Letters. 2005. DOI : 10.1103/PhysRevLett.94.107602.Toward a unified description of nonlinearity and frequency dispersion of piezoelectric and dielectric responses in Pb(Zr,Ti)O-3
Materials Science and Engineering B-Solid State Materials for Advanced Technology. 2005. DOI : 10.1016/j.mseb.2005.02.011.Correlation between dielectric anisotropy and positive or zero transverse piezoelectric coefficients in perovskite ferroelectric single crystals
Applied Physics Letters. 2005. DOI : 10.1063/1.2041827.Piezoelectric properties of Li- and Ta-modified (K0.5Na0.5)NbO3 ceramics
Applied Physics Letters. 2005. DOI : 10.1063/1.2123387.Structural and dielectric properties of strain-controlled epitaxial SrTiO3 thin films by two-step growth technique
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Journal of the European Ceramic Society. 2005. DOI : 10.1016/j.jeurceramsoc.2005.03.094.Piezoelectric thin films for bulk acoustic wave resonator applications : from processing to microwave filters
Lausanne, EPFL, 2004. DOI : 10.5075/epfl-thesis-2991.Dielectric response and structural features of Pb(Sc1/2Ta1/2)O-3 (PST) sol-gel derived thin films
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Integrated Ferroelectrics. 2004. DOI : 10.1080/10584580490895077.Polar ceramics in rf-MEMS and microwave reconfigurable electronics: A brief review on recent issues
Journal of Electroceramics. 2004. DOI : 10.1007/s10832-004-5101-3.The effect of boundary conditions and sample aspect ratio on apparent d(33) piezoelectric coefficient determined by direct quasistatic method
IIEEE Transactions on Ultrasonics, Ferroelectrics and Frequency Control. 2004. DOI : 10.1109/TUFFC.2004.1320781.Special issue on electroceramics in micro-electro-mechanical systems
Journal of Electroceramics. 2004. DOI : 10.1023/B:JECR.0000034010.06307.75.Direct piezoelectric effect in relaxor-ferroelectric single crystals
Journal of Applied Physics. 2004. DOI : 10.1063/1.1703829.Positional order in lead scandium tantalate (PST) as a "tool" for the investigation of relaxor ferroelectric behavior in thin films
Lausanne, EPFL, 2004. DOI : 10.5075/epfl-thesis-3144.Crossover between extrinsic and intrinsic dielectric loss mechanisms in SrTiO3 thin films at microwave frequencies
Applied Physics Letters. 2004. DOI : 10.1063/1.1690878.Ferroelectric properties of an epitaxial lead zirconate titanate thin film deposited by a hydrothermal method below the Curie temperature
Applied Physics Letters. 2004. DOI : 10.1063/1.1762973.Large enhancement of the piezoelectric response in perovskite crystals by electric bias field antiparallel to polarization
Applied Physics Letters. 2004. DOI : 10.1063/1.1799231.Polarization response of Perovskite films for microwave tunable applications
Lausanne, EPFL, 2004. DOI : 10.5075/epfl-thesis-3145.Piezoelectric response and polarization switching in small anisotropic perovskite particles
Nano Letters. 2004. DOI : 10.1021/nl049333a.Pyroelectric properties of (1-x)Pb(Mg1/3Nb2/3)O-3-xPbTiO(3) and (1-x)Pb(Zn1/3Nb2/3)O-3-xPbTiO(3) single crystals measured using a dynamic method
Journal of Applied Physics. 2004. DOI : 10.1063/1.1775308.Microstructural and electrical properties of (Sr,Ba)Nb2O6 thin films grown by pulsed laser deposition
Journal of the European Ceramic Society. 2004. DOI : 10.1016/S0955-2219(03)00409-6.Enhanced performance of pyroelectric microsensors through the introduction of nanoporosity
Journal of the European Ceramic Society. 2004. DOI : 10.1016/S0955-2219(03)00239-5.Analysis of the non linear domain wall response in ferroelectric thin films
Ferroelectrics. 2004. DOI : 10.1080/00150190490456583.Nature of nonlinear imprint in ferroelectric films and long-term prediction of polarization loss in ferroelectric memories
Journal of Applied Physics. 2004. DOI : 10.1063/1.1805190.Lead free piezoelectric materials
Journal of Electroceramics. 2004. DOI : 10.1007/s10832-004-5130-y.Size effect on permittivity in ferroelectric polydomain thin films
Physical Review B. 2004. DOI : 10.1103/PhysRevB.70.172107.Ferroelectric property of an epitaxial lead zirconate titanate thin film deposited by a hydrothermal method
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Journal of Applied Physics. 2004. DOI : 10.1063/1.1785843.Three-dimensional ferroelectric domain imaging of bulk Pb(Zr,Ti)O-3 by atomic force microscopy
Applied Physics Letters. 2004. DOI : 10.1063/1.1655695.Kinetics of polarization reversal in ferroelectric films: role of domain nucleation and domain wall motion
Ceramics International. 2004. DOI : 10.1016/j.ceramint.2003.12.021.Patterned and self-assembled ferroelectric nano-structures obtained by epitaxial growth and e-beam lithography
Lausanne, EPFL, 2004. DOI : 10.5075/epfl-thesis-3047.{100}-textured, piezoelectric Pb(Zr-x Ti1-x)O-3 thin films for MEMS: integration, deposition and properties
Sensors and Actuators A: Physical. 2003. DOI : 10.1016/S0924-4247(03)00090-6.Crossover between nucleation-controlled kinetics and domain wall motion kinetics of polarization reversal in ferroelectric films
Applied Physics Letters. 2003. DOI : 10.1063/1.1621730.Monodomain versus polydomain piezoelectric response of 0.67Pb(Mg1/3Nb2/3)O-3-0.33PbTiO(3) single crystals along nonpolar directions (vol 83, pg 527, 2003)
Applied Physics Letters. 2003. DOI : 10.1063/1.1614435.Can the addition of a dielectric improve the figure of merit of a tunable material?
Journal of the European Ceramic Society. 2003. DOI : 10.1016/S0955-2219(03)00139-0.Imaging by time-of-flight secondary ion mass spectrometry of plasma patterned metal and oxide thin films
Applied Surface Science. 2003. DOI : 10.1016/S0169-4332(02)00730-4.New sol-gel route for processing of PMN thin films
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Applied Physics Letters. 2003. DOI : 10.1063/1.1592880.Dielectric and piezoelectric properties of relaxor Pb(Sc1/2Nb1/2)O-3 thin films
Applied Physics Letters. 2003. DOI : 10.1063/1.1604189.Ferroelectric materials for microwave tunable applications
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Integrated Ferroelectrics. 2003. DOI : 10.1080/10584580390258921.Properties of the elastic anomaly in SrBi2Nb2O9-based ceramics
Japanese Journal of Applied Physics. 2003. DOI : 10.1143/JJAP.42.6094.Shift of phase transition temperature in strontium titanate thin films
Integrated Ferroelectrics. 2003. DOI : 10.1080/10584580390261134.Piezoelectric anisotropy-phase transition relations in perovskite single crystals
Journal of Applied Physics. 2003. DOI : 10.1063/1.1625080.Piezoelectric acoustic sensors and ultrasonic transducers based on textured PZT thin films
Lausanne, EPFL, 2003. DOI : 10.5075/epfl-thesis-2699.Structural investigation of thin SrTiO3 films grown on MgO and LaAlO3 substrates
Integrated Ferroelectrics. 2003. DOI : 10.1080/10584580390258633.Direct observation of inversely polarized frozen nanodomains in fatigued ferroelectric memory capacitors
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Physical Review B. 2002. DOI : 10.1103/PhysRevB.65.219901.Investigation of electrical degradation effects in ferroelectric thin film based tunable microwave components
Integrated Ferroelectrics. 2002. DOI : 10.1080/10584580215500.Effect of magnesium on the properties of LiNbO3 thin films prepared from polymeric precursors
Integrated Ferroelectrics. 2002. DOI : 10.1080/713718183.Unusual size effect on the polarization patterns in micron-size Pb(Zr,Ti)O-3 film capacitors
Applied Physics Letters. 2002. DOI : 10.1063/1.1489478.Properties of chemical solution deposited polycrystalline neodymium-modified Bi4Ti3O12
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Physical Review B. 2002. DOI : 10.1103/PhysRevB.66.214109.Crystal orientation dependence of the piezoelectric d(33) coefficient in tetragonal BaTiO3 as a function of temperature
Applied Physics Letters. 2002. DOI : 10.1063/1.1445481.Films minces relaxeur-ferroélectriques à base de Pb(Mg1/3NB2/3)O3 : élaboration, propriétés diélectriques et électromécaniques
Lausanne, EPFL, 2002. DOI : 10.5075/epfl-thesis-2491.Processing and electrical properties of screen-printed PZT thick films
Lausanne, EPFL, 2002. DOI : 10.5075/epfl-thesis-2448.Evidence for forward domain growth being rate-limiting step in polarization switching in < 111 >-oriented-Pb(Zr0.45Ti0.55)O-3 thin-film capacitors
Applied Physics Letters. 2002. DOI : 10.1063/1.1517396.Influence of oxygen flow on crystallization and morphology of LiNbO3 thin films
Ferroelectrics. 2002. DOI : 10.1080/713716163.Study of growth and properties of in-situ sputter deposited Pb(Zrx, Ti1-x)O3 thin films
Lausanne, EPFL, 2002. DOI : 10.5075/epfl-thesis-2510.Sol-gel derived Pb(Sc0.5Nb0.5)O-3 thin films: Processing and dielctric properties
Japanese Journal of Applied Physics. 2002. DOI : 10.1143/JJAP.41.6765.Insights in the sol-gel processing of Pb(Mg1/3Nb2/3)O-3. The synthesis and crown structure of a new lead magnesium cluster: Pb6Mg12(mu-OAc)(6)( mu(2), eta(2)-OAc)(18)(mu(3), eta(2)-OC2H4OPri)(12)
Inorganic Chemistry Communications. 2002. DOI : 10.1016/S1387-7003(02)00390-8.Properties of ferroelectric PbTiO3 thin films
Journal of Applied Physics. 2002. DOI : 10.1063/1.1431432.Pyroelectric nanoporous films: Synthesis and properties
Applied Physics Letters. 2002. DOI : 10.1063/1.1498008.Preparation and dielectric properties of Pb(Sc1/2Nb1/2)O-3-PbTiO3 thin films near MPB compositions
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Physical Review B. 2002. DOI : 10.1103/PhysRevB.65.012104.All-fiber phase modulator based on lead zirconate titanate thin-film coating
Applied Physics Letters. 2001. DOI : 10.1063/1.1364508.Phase transition behaviors of (1-x)Pb(Yb1/2Nb1/2) O-3-xBa(Yb1/2Nb1/2)O-3 ceramics
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Journal of Applied Physics. 2001. DOI : 10.1063/1.1409573.Extrinsic contributions to the piezoelectric response of lead-based ferroelectrics
Lausanne, EPFL, 2001. DOI : 10.5075/epfl-thesis-2357.Piezoelectric hysteresis analysis and loss separation
Journal of Applied Physics. 2001. DOI : 10.1063/1.1405822.Excess lead in the perovskite lattice of PZT thin films made by in-situ reactive sputtering
Integrated Ferroelectrics. 2001. DOI : 10.1080/10584580108015527.Quantitative analysis of the bit size dependence on the pulse width and pulse voltage in ferroelectric memory devices using atomic force microscopy
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Journal of the European Ceramic Society. 2001. DOI : 10.1016/S0955-2219(01)00217-5.Charge relaxation at the interfaces of low-voltage ferroelectric film capacitors: Fatigue endurance and size effects
Ferroelectrics. 2001. DOI : 10.1080/00150190108008675.Size and top electrode-edge effects on fatigue in Pb(Zr,Ti)O-3 capacitors with Pt-electrodes
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Journal of Applied Physics. 2001. DOI : 10.1063/1.1412272.Processing and properties of screen-printed lead zirconate titanate piezoelectric thick films on electroded silicon
Journal of the American Ceramic Society. 2001. DOI : 10.1111/j.1151-2916.2001.tb01106.x.Principle of ferroelectric domain imaging using atomic force microscope
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Journal of Applied Physics. 2001. DOI : 10.1063/1.1359166.Constant-current study of dielectric breakdown of Pb(Zr,Ti)O-3 ferroelectric film capacitors
Integrated Ferroelectrics. 2001. DOI : 10.1080/10584580108215676.Processing optimization of solution derived PbZr1-xTixO3 thin films for piezoelectric applications
Integrated Ferroelectrics. 2001. DOI : 10.1080/10584580108016897.Flux growth and characterization of quasi cubic PZN-PT single crystals
Annales De Chimie-Science Des Materiaux. 2001.Synthesis of lead nickel niobate-lead zirconate titanate solid solutions by a B-site precursor method
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Ieee Microwave and Wireless Components Letters. 2001. DOI : 10.1109/7260.959311.Electromechanical properties and self-polarization in relaxor Pb(Mg1/3Nb2/3)O-3 thin films
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Integrated Ferroelectrics. 2001. DOI : 10.1080/10584580108016899.Conductivity, dielectric and piezoelectric properties of SrBi4Ti4O15
Lausanne, EPFL, 2000. DOI : 10.5075/epfl-thesis-2227.Phase transitions and strain-induced ferroelectricity in SrTiO3 epitaxial thin films
Physical Review B. 2000. DOI : 10.1103/PhysRevB.61.902.Electroceramic materials
Acta Materialia. 2000. DOI : 10.1016/S1359-6454(99)00293-1.Dielectric breakdown in (Pb,La)(Zr,Ti)O-3 ferroelectric thin films with Pt and oxide electrodes
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Lausanne, EPFL, 2000. DOI : 10.5075/epfl-thesis-2172.Growth and properties of transparent Pb(Zn-1/3, Nb-2/3)O-3-PbTiO3 single crystals with a cubic habitus
Japanese Journal of Applied Physics. 2000. DOI : 10.1143/JJAP.39.2732.Sputtered zinc oxide and lead zirconate titanate piezoelectric thin films on optical fibers
Lausanne, EPFL, 2000. DOI : 10.5075/epfl-thesis-2197.Preisach modeling of ferroelectric pinched loops
Applied Physics Letters. 2000. DOI : 10.1063/1.1332824.Downscaling of Pb(Zr,Ti)O-3 film thickness for low-voltage ferroelectric capacitors: Effect of charge relaxation at the interfaces
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Journal of the American Ceramic Society. 2000. DOI : 10.1111/j.1151-2916.2000.tb01402.x.Optical fibers with patterned ZnO/electrode coatings for flexural actuators
Sensors and Actuators A: Physical. 1999. DOI : 10.1016/S0924-4247(98)00273-8.Study and control of the conductivity of Nb-doped Bi4Ti3O12 for high temperature piezoelectric applications
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Scientific Reports. 2015. DOI : 10.1038/srep15819.Towards room-temperature deterministic ferroelectric control of ferromagnetic thin films
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Ferroelectrics. 2015. DOI : 10.1080/00150193.2015.1012414.Post-deposition control of ferroelastic stripe domains and internal electric field by thermal treatment
Applied Physics Letters. 2015. DOI : 10.1063/1.4906295.Polarity of translation boundaries in antiferroelectric PbZrO3
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Physical Review B. 2015. DOI : 10.1103/PhysRevB.92.214112.In Search of Ferroelectricity in Antiferroelectric Lead Zirconate
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Physical Review B. 2015. DOI : 10.1103/PhysRevB.91.059903.Room temperature concurrent formation of ultra-dense arrays of ferroelectric domain walls
Applied Physics Letters. 2015. DOI : 10.1063/1.4932524.Bent Ferroelectric Domain Walls as Reconfigurable Metallic-Like Channels
Nano Letters. 2015. DOI : 10.1021/acs.nanolett.5b03450.Effective-surface-energy approach for size effects in ferroics
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Nature Materials. 2015. DOI : 10.1038/Nmat4365.Non-volatile polarization switch of magnetic domain wall velocity
Applied Physics Letters. 2015. DOI : 10.1063/1.4937999.Anomalously thick domain walls in ferroelectrics
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Nature Nanotechnology. 2015. DOI : 10.1038/Nnano.2015.114.Influence of flexoelectric coupling on domain patterns in ferroelectrics
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Applied Physics Letters. 2014. DOI : 10.1063/1.4869851.Superdomain Structure in Epitaxial Tetragonal PZT Thin Films Under Tensile Strain
Ferroelectrics. 2014. DOI : 10.1080/00150193.2014.893802.Effect of elastic compliances and higher order Landau coefficients on the phase diagram of single domain epitaxial Pb(Zr, Ti)O-3 (PZT) thin films
Aip Advances. 2014. DOI : 10.1063/1.4905265.Analysis of composition homogeneity and polarization orientation of PZT submicron fibers by micro-Raman spectroscopy
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Applied Physics Letters. 2014. DOI : 10.1063/1.4874835.Solid Solutions of Lead Metaniobate-Stabilization of the Ferroelectric Polymorph and the Effect on the Lattice Parameters, Dielectric, Ferroelectric, and Piezoelectric Properties
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Physical Review Letters. 2014. DOI : 10.1103/PhysRevLett.113.207601.Closed-circuit domain quadruplets in BaTiO3 nanorods embedded in a SrTiO3 film
Physical Review B. 2014. DOI : 10.1103/PhysRevB.89.060101.Ferroelectric control of magnetic domains in ultra-thin cobalt layers
Applied Physics Letters. 2013. DOI : 10.1063/1.4833495.Free-electron gas at charged domain walls in insulating BaTiO3
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Nature Communications. 2013. DOI : 10.1038/ncomms3229.Domain wall conduction in bismuth ferrite thin films
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Japanese Journal of Applied Physics. 2013. DOI : 10.7567/Jjap.52.09Ka14.Defect ordering and defect-domain-wall interactions in PbTiO3: A first-principles study
Physical Review B. 2013. DOI : 10.1103/PhysRevB.88.214116.Piezoelectric properties of twinned ferroelectric perovskites with head-to-head and tail-to-tail domain walls
Physical Review B. 2013. DOI : 10.1103/PhysRevB.88.024114.Structural phase transitions and electronic phenomena at 180-degree domain walls in rhombohedral BaTiO3
Physical Review B. 2013. DOI : 10.1103/PhysRevB.87.054111.Conductivity and Ferroelectric Hysteresis in Bi4Ti3O12 Single Crystals Around Room Temperature
Ferroelectrics. 2013. DOI : 10.1080/00150193.2013.822725.Dielectric properties of K(Ta0.55Nb0.45)O-3 Single Crystal
2012. 21st IEEE International Symposium on Applications of Ferroelectrics held jointly with 11th European Conference on the Applications of Polar Dielectrics and 4th Conference on Piezoresponse Force Microscopy and Nanoscale Phenomena in Polar Materials. DOI : 10.1109/ISAF.2012.6297842.Magnetic domain wall propagation under ferroelectric control
Physical Review B. 2012. DOI : 10.1103/PhysRevB.86.235130.Bichiral structure of ferroelectric domain walls driven by flexoelectricity
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Physical Review Letters. 2012. DOI : 10.1103/PhysRevLett.108.027603.Dielectric and Piezoelectric Properties of K(Ta0.51Nb0.49)O3 Single Crystal
Ferroelectrics. 2012. DOI : 10.1080/00150193.2013.821919.Long-term retention in organic ferroelectric-graphene memories
Applied Physics Letters. 2012. DOI : 10.1063/1.3676055.Macroscopic Theory of Charged Domain Walls in Ferroelectrics
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Physical Review B. 2012. DOI : 10.1103/PhysRevB.86.104104.Mechanism of hydrothermal growth of ferroelectric PZT nanowires
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Applied Physics Letters. 2012. DOI : 10.1063/1.4754146.Ferroelectric Lead Metaniobate and its Solid Solutions: Solid State Synthesis and Characterization
2012. 21st IEEE International Symposium on Applications of Ferroelectrics held jointly with 11th European Conference on the Applications of Polar Dielectrics and 4th Conference on Piezoresponse Force Microscopy and Nanoscale Phenomena in Polar Materials, Aveiro, PORTUGAL, JUL 09-13, 2012. DOI : 10.1109/ISAF.2012.6297854.Dielectric properties of K(Ta0.53Nb0.47)O-3 Single Crystal
2012. 21st IEEE International Symposium on Applications of Ferroelectrics held jointly with 11th European Conference on the Applications of Polar Dielectrics and 4th Conference on Piezoresponse Force Microscopy and Nanoscale Phenomena in Polar Materials. DOI : 10.1109/ISAF.2012.6297842.Enhanced electromechanical response of ferroelectrics due to charged domain walls
Nature Communications. 2012. DOI : 10.1038/ncomms1751.Non-volatile ferroelectric gating of magnetotransport anisotropy in (Ga,Mn)(As,P)
Applied Physics Letters. 2012. DOI : 10.1063/1.4731245.Impact of Strain Effects on the Stability of Ising Walls in Ferroelectrics
Ferroelectrics. 2012. DOI : 10.1080/00150193.2012.744213.Improved Screening Ability of Ferroelectric-Semiconductor Interface
2011. Joint Meeting of the 19th IEEE International Symposium on the Applications of Ferroelectrics/10th European Conference on the Applications of Polar Dielectrics, Edinburgh, SCOTLAND, Aug 09-12, 2010. p. 1959 - 1961. DOI : 10.1109/TUFFC.2011.2037.Polarization Reversal in BiFeO3 Capacitors: Complex Behavior Revealed by PFM
Ferroelectrics. 2011. DOI : 10.1080/00150193.2011.594326.Polarization Screening in Multiferroic (Ga,Mn)As/P(VDF-TrFE) Transistors
Ferroelectrics. 2011. DOI : 10.1080/00150193.2011.594738.Enhanced Curie temperature and nonvolatile switching of ferromagnetism in ultrathin (Ga,Mn)As channels
Physical Review B. 2011. DOI : 10.1103/PhysRevB.83.115203.Growth-mode induced defects in epitaxial SrTiO3 thin films grown on single crystal LaAlO3 by a two-step PLD process
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Applied Physics Letters. 2011. DOI : 10.1063/1.3529473.Ferroelectric polymer gates for non-volatile field effect control of ferromagnetism in (Ga, Mn)As layers
Nanotechnology. 2011. DOI : 10.1088/0957-4484/22/25/254004.Thermally Induced Cooperative Molecular Reorientation and Nanoscale Polarization Switching Behaviors of Ultrathin Poly(vinylidene fluoride-trifluoroethylene) Films
The Journal of Physical Chemistry B. 2011. DOI : 10.1021/jp2061442.Size effect in ferroelectrics: Competition between geometrical and crystalline symmetries
Physical Review B. 2011. DOI : 10.1103/PhysRevB.83.014104.Control of the Screening Ability at a Ferroelectric-Semiconductor Interface
Ferroelectrics. 2011. DOI : 10.1080/00150193.2011.594410.Unusual dielectric behavior and domain structure in rhombohedral phase of BaTiO3 single crystals
Journal of Applied Physics. 2011. DOI : 10.1063/1.3605494.Structure Determination and Compositional Modification of Body-Centered Tetragonal PX-Phase Lead Titanate
Chemistry of Materials. 2011. DOI : 10.1021/cm1030206.Head-to-head and tail-to-tail 180^{°} domain walls in an isolated ferroelectric
Physical Review B. 2011. DOI : 10.1103/PhysRevB.83.184104.Integration of Coplanar Barium-Strontium Titanate Tunable Capacitors on Micro-Machined Silicon
2010. International Conference on Electroceramics (ICE-2009), Delhi, INDIA, Dec 13-17, 2009. p. 110 - 119. DOI : 10.1080/10584587.2010.488560.Ferroelectric Polymer Gate Transistor as a Model System for Exploring the Mechanisms of the Retention Loss
2010. Joint Meeting of 12th International Meeting on Ferroelectricity/18th IEEE International Symposium on Applications of Ferroelectrics (IMF-ISAF-2009), Xian, PEOPLES R CHINA, Aug 23-27, 2009. p. 185 - 189. DOI : 10.1080/00150193.2010.486237.Tunable thin film bulk acoustic wave resonator based on BaxSr1-xTiO3 thin film
IEEE Transactions on Ultrasonics, Ferroelectrics and Frequency Control. 2010. DOI : 10.1109/TUFFC.2010.1417.Effect of mechanical loading on the tuning of acoustic resonances in Ba (x) Sr1-x TiO3 thin films
Journal Of Electroceramics. 2010. DOI : 10.1007/s10832-009-9564-0.Low-Symmetry Phases in Ferroelectric Nanowires
Nano Letters. 2010. DOI : 10.1021/nl9034708.PFM investigation of stress induced ferroelastic switching in piezoelectric bulk ceramics
2010. 2010 IEEE International Symposium on the Applications of Ferroelectrics (ISAF), Edinbourgh, Scottland, August 2010. DOI : 10.1109/ISAF.2010.5712232.Antiferrodistortive Structural Phase Transition in Compressively-Strained Epitaxial SrTiO3 Film Grown on (La, Sr)(Al, Ta)O-3 Substrate
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Journal of Applied Physics. 2010. DOI : 10.1063/1.3474648.Ferroelectric Polymer Gates for Persistent Field Effect Control of Ferromagnetism in (Ga,Mn)As Layers
Lausanne, EPFL, 2010. DOI : 10.5075/epfl-thesis-4886.Self-assembled ferroelectric-dielectric nanocomposite films for tunable applications
2010. Conference on Fundamentals and Technology of Multifunctional Oxide Thin Films (Symposium G, EMRS 2009 Spring Meeting), Strasbourg, FRANCE, Jun 08-12, 2009. DOI : 10.1088/1757-899X/8/1/012010.Ferroelectric Nanowires : an Investigation in Synthesis, Characterization, Functionality, and Modeling of Finite Size Effects
Lausanne, EPFL, 2010. DOI : 10.5075/epfl-thesis-4914.Synchrotron X-ray diffraction study on a single nanowire of PX-phase lead titanate
Journal of the European Ceramic Society. 2010. DOI : 10.1016/j.jeurceramsoc.2010.07.014.Structural complexity of (Na0.5Bi0.5)TiO3-BaTiO3 as revealed by Raman spectroscopy
Physical Review B. 2010. DOI : 10.1103/PhysRevB.82.104112.The stress-assisted enhancement of piezoelectric properties due to mechanically incompatible domain structures in BaTiO3
2010. 2010 IEEE International Symposium on the Applications of Ferroelectrics (ISAF), Edinbourgh, Scottland, August 2010. DOI : 10.1109/ISAF.2010.5712237.Strong ferroelectric domain-wall pinning in BiFeO3 ceramics
Journal of Applied Physics. 2010. DOI : 10.1063/1.3490249.Cation-site intrinsic defects in Zn-doped CdTe
Physical Review B. 2010. DOI : 10.1103/PhysRevB.81.075215.Structural Property and Electric Field Response of a Single Perovskite PbTiO3 Nanowire Using Micro X-ray Beam
Japanese Journal Of Applied Physics. 2010. DOI : 10.1143/JJAP.49.09MC09.Electrical tuning of dc bias induced acoustic resonances in paraelectric thin films (vol 104, 094102, 2008)
Journal of Applied Physics. 2010. DOI : 10.1063/1.3357393.Anomalous dielectric peak in Mg and Li doped ZnO ceramics and thin films
Applied Physics Letters. 2010. DOI : 10.1063/1.3505930.A hybrid density functional study of lithium in ZnO: Stability, ionization levels, and diffusion
Physical Review B. 2009. DOI : 10.1103/PhysRevB.80.195205.Large-scale fabrication of titanium-rich perovskite PZT submicro/nano wires and their electromechanical properties
IEEE Transactions on Ultrasonics, Ferroelectrics and Frequency Control. 2009. DOI : 10.1109/TUFFC.2009.1254.Micromachined tunable devices based on silicon integrated BaxSr1-xTiO3 thin films : concepts, fabrication and characterization
Lausanne, EPFL, 2009. DOI : 10.5075/epfl-thesis-4284.Properties and phase transitions in lead free piezoelectrics : (K,Na)NbO3-LiNbO3 and (Bi,Na)TiO3-BaTiO3
Lausanne, EPFL, 2009. DOI : 10.5075/epfl-thesis-4528.Self-Assembled Perovskite-Fluorite Oblique Nanostructures for Adaptive (Tunable) Electronics
Advanced Materials. 2009. DOI : 10.1002/adma.200800253.HREM studies of twins in Cd1−xZnxTe (x ≈ 0.04) thin films grown by molecular beam epitaxy
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Physica B: Condensed Matter. 2009. DOI : 10.1016/j.physb.2009.08.251.Structure and Energy of Charged Domain Walls in Ferroelectrics
2009. 18th IEEE International Symposium on Applications of Ferroelectrics, Xian, PEOPLES R CHINA, Aug 23-27, 2009. p. 37 - 42. DOI : 10.1109/ISAF.2009.5307622.Polar phonons in some compressively stressed epitaxial and polycrystalline SrTiO3 thin films
Journal of Electroceramics. 2009. DOI : 10.1007/s10832-008-9494-2.Retention in nonvolatile silicon transistors with an organic ferroelectric gate
Applied Physics Letters. 2009. DOI : 10.1063/1.3158959.Control of Ferromagnetism in a (Ga,Mn)As - Based Multiferroic System via a Ferroelectric Gate
2009. 29th International Conference on Physics of Semiconductors, Rio de Janeiro, BRAZIL, Jul 27-Aug 01, 2008. p. 471 - 472. DOI : 10.1063/1.3295510.Evidence for dielectric aging due to progressive 180 degrees domain wall pinning in polydomain Pb(Zr0.45Ti0.55)O-3 thin films
Physical Review B. 2009. DOI : 10.1103/PhysRevB.79.054104.Li-related defects in ZnO : hybrid functional calculations
Physica B: Condensed Matter. 2009. DOI : 10.1016/j.physb.2009.08.165.Toward a low-voltage multiferroic transistor: Magnetic (Ga,Mn)As under ferroelectric control
Applied Physics Letters. 2009. DOI : 10.1063/1.3076107.Special Issue on: International Conference on Electroceramics
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MRS Bulletin. 2009. DOI : 10.1557/mrs2009.174.Non-180° domains in LiTaO3 thin films deposited by metal organic chemical vapor deposition
Applied Physics Letters. 2009. DOI : 10.1063/1.3204451.Piezoresponse force microscopy on doubly clamped KNbO3 nanowires
Applied Physics Letters. 2008. DOI : 10.1063/1.3000385.1T Memory Cell Based on PVDF-TrFE Field Effect Transistor
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Lausanne, EPFL, 2008. DOI : 10.5075/epfl-thesis-4082.Polarisation reversal in ferroelectric PVDF and PZT films
Lausanne, EPFL, 2008. DOI : 10.5075/epfl-thesis-4097.Trends in Ferroelectric/Piezoelectric Ceramics
Piezoelectricity: Evolution and Future of a Technology; Berlin: Springer, 2008. p. 553 - 570.Reliability study of tunable ferroelectric capacitors
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2008. p. 162 - 165. DOI : 10.1109/ESSDERC.2008.4681724.Size effect in metal/ferroelectric/metal heterostructures:Depolarizing effect vs. short-range coupling
2008. 17th IEEE International Symposium on the Applications of Ferroelectrics, Feb 23-28 2008. DOI : 10.1109/ISAF.2008.4693765.Restricted domain growth and polarization reversal kinetics in ferroelectric polymer thin films
Journal of Applied Physics. 2008. DOI : 10.1063/1.2907990.High-temperature instability of Li- and Ta-modified (K,Na)NbO3 piezoceramics
Journal of the American Ceramic Society. 2008. DOI : 10.1111/j.1551-2916.2008.02392.x.Ferroelectric control of ferromagnetism in diluted magnetic semiconductors
2008. 17th IEEE International Symposium on Applications of Ferroelectrics, Santa Fe, NM, Feb 23-28, 2008. p. 197 - 198. DOI : 10.1109/ISAF.2008.4693725.Short-range and long-range contributions to the size effect in metal-ferroelectric-metal heterostructures
Physical Review B. 2008. DOI : 10.1103/PhysRevB.77.174111.Electrical tuning of dc bias induced acoustic resonances in paraelectric thin films
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Applied Physics Letters. 2008. DOI : 10.1063/1.3056658.La0.5Sr0.5Fe1-yMyO3-[delta] (M = Ti, Ta) perovskite oxides for oxygen separation membranes
Lausanne, EPFL, 2008. DOI : 10.5075/epfl-thesis-4137.Non-volatile ferroelectric control of ferromagnetism in (Ga, Mn)As
Nature Materials. 2008. DOI : 10.1038/nmat2185.Giant domain wall contribution to the dielectric susceptibility in BaTiO3 single crystals
Applied Physics Letters. 2007. DOI : 10.1063/1.2751135.Growth process approaches for improved properties of tunable ferroelectric thin films
Journal Of The European Ceramic Society. 2007. DOI : 10.1016/j.jeurceramsoc.2007.02.027.Large and stable thickness coupling coefficients of [001](C)-oriented KNbO3 and Li-modified (K,Na)NbO3 single crystals
Applied Physics Letters. 2007. DOI : 10.1063/1.2472524.Nonvolatile gate effect in the PZT/AlGaN/GaN heterostructure
Journal Of The European Ceramic Society. 2007. DOI : 10.1016/j.jeurceramsoc.2007.02.150.Quantum well ZnCdTe/CdTe structures with integrated ferroelectric gates
2007. 16th IEEE International Symposium on Applications of Ferroelectrics, Nara, JAPAN, May 27-31, 2007. p. 52 - 53. DOI : 10.1109/ISAF.2007.4393165.Compositional inhomogeneity in Li- and Ta-modified (K, Na)NbO3 ceramics
Journal of the American Ceramic Society. 2007. DOI : 10.1111/j.1551-2916.2007.01962.x.Epitaxial growth of Ba0.3Sr0.7TiO3 thin films on Al2O3(0001) using ultrathin TiN layer as a sacrificial template
Applied Physics Letters. 2007. DOI : 10.1063/1.2719673.Microwave phase shifters based on sol-gel derived Ba0.3Sr0.7TiO3 ferroelectric thin films
2007. 2nd European Microwave Integrated Circuits Conference, Munich, GERMANY, Oct 08-10, 2007. p. 497 - 500. DOI : 10.1109/EMICC.2007.4412758.Rotator and extender ferroelectrics: Importance of the shear coefficient to the piezoelectric properties of domain-engineered crystals and ceramics
Journal Of Applied Physics. 2007. DOI : 10.1063/1.2653925.Processing and dielectric characterization of Ba0.3Sr0.7TiO3 thin films on alumina substrates
Journal Of The European Ceramic Society. 2007. DOI : 10.1016/j.jeurceramsoc.2006.11.020.Annealing effect on dislocations in SrTiO3/LaAlO3 heterostructures
Journal Of Applied Physics. 2007. DOI : 10.1063/1.2710281.Temperature stability of the piezoelectric properties of Li-modified KNN ceramics
Journal Of The European Ceramic Society. 2007. DOI : 10.1016/j.jeurceramsoc.2007.02.100.Tunable ferroelectric thin films with enhanced responses through nano- structural control
2007. 16th IEEE International Symposium on Applications of Ferroelectrics, Nara, Japan, May 27-31, 2007. p. 195 - 197. DOI : 10.1109/ISAF.2007.4393211.Qualitative distinction in enhancement of the piezoelectric response in PbTiO3 in proximity of coercive fields: 90 degrees versus 180 degrees switching
Journal Of Applied Physics. 2007. DOI : 10.1063/1.2733594.Landau thermodynamic potential for BaTiO3
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Lausanne, EPFL, 2007. DOI : 10.5075/epfl-thesis-3820.Processing and properties of ferroelectric relaxor lead scandium tantalate Pb(Sc1/2Ta1/2)O-3 thin films
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Applied Physics Letters. 2007. DOI : 10.1063/1.2723681.Ferroelectric Gate on AlGaN/GaN Heterostructures
2007. 15th IEEE International Symposium on Applications of Ferroelectrics, Sunset Beach, NC, JUL 30-AUG 03, 2006. p. 82 - 85. DOI : 10.1109/ISAF.2006.4387839.Tuning of direct current bias-induced resonances in micromachined Ba[sub 0.3]Sr[sub 0.7]TiO[sub 3] thin-film capacitors
Journal of Applied Physics. 2007. DOI : 10.1063/1.2822203.DC bias dependent shift of resonance frequencies in BST thin film membranes
2007. 16th IEEE International Symposium on Applications of Ferroelectrics, Nara, JAPAN, May 27-31, 2007. p. 236 - 238. DOI : 10.1109/ISAF.2007.4393226.Preparation and properties of KNbO3-based piezoelectric ceramics
Lausanne, EPFL, 2007. DOI : 10.5075/epfl-thesis-3856.Ferroelectricity in asymmetric metal-ferroelectric-metal heterostructures: A combined first-principles-phenomenological approach
Physical Review Letters. 2007. DOI : 10.1103/PhysRevLett.98.207601.A study of the phase diagram of (K,Na,Li)NbO3 determined by dielectric and piezoelectric measurements, and Raman spectroscopy
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Applied Physics Letters. 2007. DOI : 10.1063/1.2721856.Erratum: Ferroelectricity in asymmetric metal-ferroelectric-metal heterostructures: A combined first-principles-phenomenological approach (vol 98, art no 207601, 2007)
Physical Review Letters. 2007. DOI : 10.1103/PhysRevLett.99.029901.Ferroelectric polymer gate on AlGaN/GaN heterostructures
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Integrated Ferroelectrics. 2007. DOI : 10.1080/10584580701756334.Ferroelectric gate on AlGaN/GaN heterostructures
Lausanne, EPFL, 2007. DOI : 10.5075/epfl-thesis-3821.Effects of film orientation on ferroelectric and piezoelectric properties of lanthanoid-substituted Bi4Ti3O12 thin films
Japanese Journal of Applied Physics. 2007. DOI : 10.1143/JJAP.46.686.DC bias-dependent shift of the resonance frequencies in BST thin film membranes
IIEEE Transactions on Ultrasonics, Ferroelectrics and Frequency Control. 2007. DOI : 10.1109/TUFFC.2007.565.First-principles description of ferroelectric/electrode interfaces and properties of not very thin ferroelectric capacitors
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Applied Physics Letters. 2007. DOI : 10.1063/1.2716842.Microwave phase shifters based on sol-gel derived Ba0.3Sr0.7TiO3 ferroelectric thin films
2007. 37th European Microwave Conference, Munich, GERMANY, Oct 08-12, 2007. p. 1295 - 1298. DOI : 10.1109/EUMC.2007.4405439.In-plane versus out-of-plane dielectric response in the thin-film relaxor Pb(Sc1/2Ta1/2)O-3
Physical Review B. 2006. DOI : 10.1103/PhysRevB.73.214112.Piezoelectric response and free-energy instability in the perovskite crystals BaTiO3, PbTiO3, and Pb(Zr,Ti)O-3
Physical Review B. 2006. DOI : 10.1103/PhysRevB.73.174106.Self polarization in Pb(Sc1/2Ta1/2)O-3 relaxor thin films: Impact on the dielectric and piezoelectric response
Japanese Journal of Applied Physics. 2006. DOI : 10.1143/JJAP.45.7288.Phase transitions, anisotropy and domain engineering : the piezoelectric properties of relaxor-ferroelectric single crystals
Lausanne, EPFL, 2006. DOI : 10.5075/epfl-thesis-3513.In-plane and out-of-plane ferroelectric instabilities in epitaxial SrTiO3 films
Physical Review Letters. 2006. DOI : 10.1103/PhysRevLett.96.157602.Temperature dependence of the direct piezoelectric effect in relaxor-ferroelectric single crystals: Intrinsic and extrinsic contributions
Journal Of Applied Physics. 2006. DOI : 10.1063/1.2358408.Ferroelectric thin films: Review of materials, properties, and applications (vol 100, art no 051606, 2006)
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Integrated Ferroelectrics. 1999. DOI : 10.1080/10584589908215631.Conducting barrier electrodes for direct contact of PZT thin films on tungsten
Journal of the Korean Physical Society. 1998.Electromechanical properties of sol-gel derived Ca-modified PbTiO3 films
Applied Physics Letters. 1998. DOI : 10.1063/1.121608.Ultrasonic flexural Lamb-wave actuators based on PZT thin film
Sensors and Actuators A: Physical. 1998. DOI : 10.1016/S0924-4247(98)80056-3.Cold-field-emission test of the fatigued state of Pb(ZnxTi1-x)O-3 films (vol 73, pg 1361, 1998)
Applied Physics Letters. 1998. DOI : 10.1063/1.122437.Direct observation of region by region suppression of the switchable polarization (fatigue) in Pb(Zr,Ti)O-3 thin film capacitors with Pt electrodes
Applied Physics Letters. 1998. DOI : 10.1063/1.121083.Influence of processing parameters on characteristics of sol-gel derived PLZT thin films
Journal De Physique Iv. 1998. DOI : 10.1051/jp4:1998906.Transient photocurrents in lead zirconate titanate thin films
Applied Physics Letters. 1998. DOI : 10.1063/1.120663.Microscopic observation of "region by region" polarisation domains freezing during fatigue of the Pt-PZT-Pt system
Integrated Ferroelectrics. 1998. DOI : 10.1080/10584589808208045.Acetic acid based sol-gel PLZT thin films: Processing and characterization
Journal of Sol-Gel Science and Technology. 1998. DOI : 10.1023/A:1008646501240.Self-polarization effect in Pb(Zr,Ti)O-3 thin films
Integrated Ferroelectrics. 1998. DOI : 10.1080/10584589808208071.High figure-of-merit porous Pb1-xCaxTiO3 thin films for pyroelectric applications
Applied Physics Letters. 1998. DOI : 10.1063/1.121391.Discrimination between bulk and interface scenarios for the suppression of the switchable polarization (fatigue) in Pb(Zr,Ti)O-3 thin films capacitors with Pt electrodes
Applied Physics Letters. 1998. DOI : 10.1063/1.121386.Removal of 90 degrees domain pinning in (100) Pb(Zr0.15Ti0.85)O-3 thin films by pulsed operation
Applied Physics Letters. 1998. DOI : 10.1063/1.121554.Relaxor behavior and electromechanical properties of Pb(Mg1/3Nb2/3)O-3 thin films
Applied Physics Letters. 1998. DOI : 10.1063/1.121702.Investigation of pyroelectric thin films and their application in micromachined infrared detectors
Lausanne, EPFL, 1998. DOI : 10.5075/epfl-thesis-1862.Dopant and microstructure effects on switching properties of PZT thin films
Lausanne, EPFL, 1998. DOI : 10.5075/epfl-thesis-1805.Cold-field-emission test of the fatigued state of Pb(ZrxTi1-x)O-3 films
Applied Physics Letters. 1998. DOI : 10.1063/1.122374.Dielectric properties of complex perovskite lead scandium tantalate under dc bias
Journal of the American Ceramic Society. 1998. DOI : 10.1111/j.1151-2916.1998.tb02519.x.Gas spectrometry based on pyroelectric thin-film arrays integrated on silicon
Sensors and Actuators A: Physical. 1998. DOI : 10.1016/S0924-4247(97)01736-6.TEM of antiferroelectric-ferroelectric phase boundary in (Pb1-xBax)(Zr1-xTix)O-3 solid solution
British Ceramic Transactions. 1997.Non-linear dielectric response of Pb(Mg1/3 Nb2/3)O3 relaxor ferroelectric
Lausanne, EPFL, 1997. DOI : 10.5075/epfl-thesis-1665.Influence de l'élaboration et de la microstructure sur le déplacement des parois de domaine et les propriétés électro-mécaniques de céramiques de Pb(Zr, Ti)O3 et BaTiO3
Lausanne, EPFL, 1997. DOI : 10.5075/epfl-thesis-1593.Sol-gel processing of PNZST thin films on Ti/Pt and Ta/Pt metallizations
Journal of the European Ceramic Society. 1997. DOI : 10.1016/S0955-2219(95)00221-9.Piezoelectric and dielectric aging in Pb(Zr,Ti)O-3 thin films and bulk ceramics
Integrated Ferroelectrics. 1997. DOI : 10.1080/10584589708015722.Photoinduced poling of lead titanate zirconate thin films
Applied Physics Letters. 1997. DOI : 10.1063/1.120154.Electromechanical properties of SrBi2Ta2O9 thin films
Applied Physics Letters. 1997. DOI : 10.1063/1.119782.Microfabricated Lamb wave device based on PZT sol-gel thin film for mechanical transport of solid particles and liquids
Journal of Microelectromechanical Systems. 1997. DOI : 10.1109/84.650131.Pyroelectric thin film sensor arrays integrated on silicon
Ferroelectrics. 1997. DOI : 10.1080/00150199708228363.Wavelength tunable fiber Bragg grating devices based on sputter deposited resistive and piezoelectric coatings
Journal of Vacuum Science & Technology a-Vacuum Surfaces and Films. 1997. DOI : 10.1116/1.580871.Piezoelectric coatings for active optical fiber devices
Ferroelectrics. 1997. DOI : 10.1080/00150199708228349.Dielectric measurements on high-Q ceramics in the microwave region
Journal of the American Ceramic Society. 1997. DOI : 10.1111/j.1151-2916.1997.tb02951.x.Germination et croissance de films minces de Pb(Zr, Ti)O3 sur silicium passivé et substrats métalliques
Lausanne, EPFL, 1997. DOI : 10.5075/epfl-thesis-1689.Piezoelectric bismuth titanate ceramics for high temperature applications
Lausanne, EPFL, 1997. DOI : 10.5075/epfl-thesis-1646.Use of ferroelectric hysteresis parameters for evaluation of niobium effects in lead zirconate titanate thin films
Journal of the American Ceramic Society. 1997. DOI : 10.1111/j.1151-2916.1997.tb02835.x.Wavelength tunable fiber Bragg grating devices based on sputter deposited resistive and piezoelectric coatings (vol 15, pg 1791, 1997)
Journal of Vacuum Science & Technology a-Vacuum Surfaces and Films. 1997. DOI : 10.1116/1.580833.PZT phase formation monitored by high-temperature X-ray diffractometry
Journal of the European Ceramic Society. 1997. DOI : 10.1016/S0955-2219(96)00133-1.Pyroelectric thin-film sensor array
Sensors and Actuators A: Physical. 1997. DOI : 10.1016/S0924-4247(97)01484-2.Influence of texture on the switching behavior of Pb(Zr0.70Ti0.30)O3 sol-gel derived thin films
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Sensors and Actuators A: Physical. 1996. DOI : 10.1016/S0924-4247(96)01324-6.Fatigue of piezoelectric properties in Pb(Zr,Ti)O-3 films
Applied Physics Letters. 1996. DOI : 10.1063/1.116189.Microstructure, electrical conductivity, and piezoelectric properties of bismuth titanate
Journal of the American Ceramic Society. 1996. DOI : 10.1111/j.1151-2916.1996.tb08086.x.Pb(Zr,Ti)O3 thin films on zirconium membranes for micromechanical applications
Applied Physics Letters. 1996. DOI : 10.1063/1.116529.Fabrication and structural analysis of ZnO coated fiber optic phase modulators
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Sensors and Actuators A: Physical. 1996. DOI : 10.1016/0924-4247(96)80160-9.Interferometric measurements of electric field-induced displacements in piezoelectric thin films
Review of Scientific Instruments. 1996. DOI : 10.1063/1.1147000.High frequency dielectric relaxation in Pb(Sc1/2Ta1/2)O-3 ceramics
Materials Science and Engineering B-Solid State Materials for Advanced Technology. 1996. DOI : 10.1016/0921-5107(95)01377-6.Sol-gel deposition of PZT thin films on ceramic ZrO2 substrates
1996. ISAF '96. Tenth IEEE International Symposium on Applications of Ferroelectrics, East Brunswick, NJ, USA, 18-21.8.1996. p. 611 - 614. DOI : 10.1109/ISAF.1996.598059.Sputter deposited piezoelectric fiber coatings for acousto-optic modulators
Journal of Vacuum Science & Technology a-Vacuum Surfaces and Films. 1996. DOI : 10.1116/1.580393.Piezoelectric properties of Ca-modified PbTiO3 thin films
Applied Physics Letters. 1996. DOI : 10.1063/1.117220.Effect of Nb Doping on the Microstructure of Sol-Gel-Derived Pzt Thin-Films
Journal of the American Ceramic Society. 1995. DOI : 10.1111/j.1151-2916.1995.tb08846.x.Pb(Zr,Ti)O3 thin films by in-situ reactive sputtering on micromachined membranes for micromechanical applications
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Microelectronic Engineering. 1995. DOI : 10.1016/0167-9317(95)00164-6.Processing and properties of thin film pyroelectric devices
Microelectronic Engineering. 1995. DOI : 10.1016/0167-9317(95)00122-0.Characterization of PZT thin films for micromotors
Microelectronic Engineering. 1995. DOI : 10.1016/0167-9317(95)00116-6.Correlations between instrinsic material parameters and dielectric properties in ceramics for microwave applications
Lausanne, EPFL, 1995. DOI : 10.5075/epfl-thesis-1339.Interferometric study of piezoelectric degradation in ferroelectric thin films
Microelectronic Engineering. 1995. DOI : 10.1016/0167-9317(95)00157-3.Micromachined PZT thin film actuators for micromotors
Oberflächen Werkstoffe. 1995.Fabrication and Characterization of Pzt Thin-Film Vibrators for Micromotors
Sensors and Actuators A: Physical. 1995. DOI : 10.1016/0924-4247(95)00994-9.Hybrid ultrasonic elastic force motors micromachined in silicon
Integrated Ferroelectrics. 1995. DOI : 10.1080/10584589508012297.Piezoelectricity and Phase-Transitions of the Mixed-Layer Bismuth Titanate Niobate Bi7Ti4NbO21
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Microelectronic Engineering. 1995. DOI : 10.1016/0167-9317(95)00133-6.Spontaneous (Zero-Field) Relaxor-to-Ferroelectric-Phase Transition in Disordered Pb(Sc1/2nb1/2)O-3
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Integrated Ferroelectrics. 1995. DOI : 10.1080/10584589508019367.Fatigue, Rejuvenation and Self-Restoring in Ferroelectric Thin-Films
Integrated Ferroelectrics. 1995. DOI : 10.1080/10584589508012569.In-situ sputter deposition of PT and PZT films on platinum and RuO2 electrodes
Microelectronic Engineering. 1995. DOI : 10.1016/0167-9317(95)00139-5.Effect of ferroelectric polarization on current response of PZT thin films
Integrated Ferroelectrics. 1995. DOI : 10.1080/10584589508012276.Role of Defects in the Ferroelectric Relaxer Lead Scandium Tantalate
Journal of the American Ceramic Society. 1995. DOI : 10.1111/j.1151-2916.1995.tb08915.x.Depletion and Depolarizing Effects in Ferroelectric Thin-Films and Their Manifestations in Switching and Fatigue
Integrated Ferroelectrics. 1995. DOI : 10.1080/10584589508019374.Dielectric-Spectroscopy of Ba(B'b-1/2''(1/2))O-3 Complex Perovskite Ceramics - Correlations between Ionic Parameters and Microwave Dielectric-Properties .2. Studies Below the Phonon Eigenfrequencies (10(12)-10(12) Hz)
Journal of Applied Physics. 1995. DOI : 10.1063/1.359290.Identification of Passive Layer in Ferroelectric Thin-Films from Their Switching Parameters
Journal of Applied Physics. 1995. DOI : 10.1063/1.360122.Effect of Nb doping on the hysteresis parameters of sol-gel derived Pb-1.1-x/2(Zr0.53TiO0.47)(1-x)NbxO3 thin films
Microelectronic Engineering. 1995. DOI : 10.1016/0167-9317(95)00159-X.Relationship between Nanostructure and Dielectric Response of Lead Scandium Tantalate .1. Structure and Domain Textures
Physica B: Condensed Matter. 1995. DOI : 10.1016/0921-4526(94)00907-D.Sol-gel PbTiO3 thin films for pyroelectric applications
Lausanne, EPFL, 1995. DOI : 10.5075/epfl-thesis-1343.DC-voltage and cycling induced recovery of switched polarisation in fatigued ferroelectric thin films
Integrated Ferroelectrics. 1995. DOI : 10.1080/10584589508012285.PZT films for micro-pumps
Integrated Ferroelectrics. 1995. DOI : 10.1080/10584589508012296.Far-infrared dielectric response of PbTiO3 and PbZr1-xTixO3 thin ferroelectric films
Journal of Physics: Condensed Matter. 1995. DOI : 10.1088/0953-8984/7/22/013.Chemical analysis of lead zirconium titanium oxide films
1995. Congrès Trinoculaire des Microscopies Électroniques, Lausanne (CH).Investigation of Pb(Zr0.70Ti0.30)O-3 thin films of different textures on Ti/Pt electrodes
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Journal of Applied Physics. 1994. DOI : 10.1063/1.355889.Processing of sol-gel PZT films for microactuators
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Japanese Journal of Applied Physics. 1994. DOI : 10.1143/JJAP.33.3984.Dielectric-Properties of Lanthanum Gallate (Lagao3) Crystal
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Applied Physics Letters. 1994. DOI : 10.1063/1.112600.B-Site Order and Infrared Reflectivity in a(B'b'')O3 Complex Perovskite Ceramics
Journal of Applied Physics. 1994. DOI : 10.1063/1.357618.The ferroelectric phase transition in complex perkovskite relaxors
Lausanne, EPFL, 1994. DOI : 10.5075/epfl-thesis-1248.Orientation of rapid thermally annealed lead zirconate titanate thin films on (111) Pt substrates
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Journal of Applied Physics. 1994. DOI : 10.1063/1.358401.Properties of Piezoelectric Pzt Thin Films for Microactuator Applications
1994. MRS conference "Materials for Smart Systems", Boston, Massachusetts, USA, 28-30.11.1994. DOI : 10.1557/PROC-360-429.Effect of Structural-Changes in Complex Perovskites on the Temperature-Coefficient of the Relative Permittivity
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Journal of Applied Physics. 1993. DOI : 10.1063/1.354300.DiP256: The Temperature-Coefficient of the Relative Permittivity of Complex Perovskites and Its Relation to Structural Transformations
Ferroelectrics. 1992. DOI : 10.1080/00150199208218002.DiP230: Dielectric-Spectroscopy of Some Ba(B'1/2b''1/2)O3 Complex Perovskites in the 10(11)-10(14)Hz Range
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Ferroelectrics. 1991. DOI : 10.1080/00150199108008250.Transmission Electron-Microscopy Investigation of the Aluminate Sodalite Ca8[Al12o24](Wo4)2 at Room-Temperature
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Materials Research Bulletin. 1988. DOI : 10.1016/0025-5408(88)90154-7.Preparation Variables for the Gdba2cu3o6.5+Delta Superconductive Ceramics
Materials Research Bulletin. 1988. DOI : 10.1016/0025-5408(88)90016-5.Preparation and Dielectric Measurements of Aluminate-Chromate Sodalite Ceramics
Ferroelectrics Letters Section. 1987. DOI : 10.1080/07315178708200500.The Observation of B-Site Ordering by Raman-Scattering in a(B'b'')O3 Perovskites
Applied Spectroscopy. 1987. DOI : 10.1366/0003702874449066.Structure of Cubic Aluminate Sodalite, Sr8[Al12O24](CrO4)2
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Materials Science and Engineering. 1985. DOI : 10.1016/0025-5416(85)90260-5.The Role of Some Cage Ion Substitutions for the Phase-Transition Characteristics of Aluminate Sodalites
Ferroelectrics. 1984. DOI : 10.1080/00150198408012716.Aluminate Sodalite Sr8[Al12O24](CrO4)2 - a New Ferroelectric Material
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Ferroelectrics. 1983. DOI : 10.1080/00150198408012717.Diffuse Ferroelectric Phase-Transition and Cation Order in the Solid-Solution System Pb(Sc1/2nb1/2)O3-Pb(Sc1/2ta1/2)O3
Ferroelectrics. 1981. DOI : 10.1080/00150198108223500.An Optical Study of the Ferroelectric Relaxors Pb(Mg1/3nb2/3)O3,Pb(Sc1/2ta1/2)O3, and Pb(Sc1/2nb1/2)O3
Ferroelectrics. 1981. DOI : 10.1080/00150198108223483.Subgrain Ordering in Relaxor Ferroelectrics
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A dirigé les thèses EPFL de
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