Nava Setter
Nationalité: Swiss and Israeli
Expertise
Electroceramics
Piezoelectrics
Ferroelectrics
Publications représentatives
Direct observation of inversely polarized frozen nanodomains in fatigued ferroelectric memory capacitors.
Colla, E. L., I. Stolichnov, et al.
Published in Applied Physics Letters 82(10): 1604-1606., 2003 in
Imaging by time-of-flight secondary ion mass spectrometry of plasma patterned metal and oxide thin films.
Coullerez, G., J. Baborowski, et al.
Published in Applied Surface Science 203: 527-531., 2003 in
New sol-gel route for processing of PMN thin films.
Parola, S., R. Khem, et al.
Published in Journal of Sol-Gel Science and Technology 26(1-3): 1109-1112., 2003 in
Ferroelectric materials for microwave tunable applications
A.K. Tagantsev, V.O. Sherman, K.F. Astafiev, J. Venkatesh, N. Setter
Published in Journal of Electroceramics 11 (2003) 5-66 in
Ferroelectric gate for control of transport properties of two-dimensional electron gas at AlGaN/GaN heterostructures
I. Stolichnov, L. Malin, P. Muralt, N. Setter
Published in Applied Phys. Letters 88 (2006) 043512-1 - 043512-3 in
Extension of the dielectric tenability range in ferroelectric materials by electric bias field antiparallel to polarization
M. Budimir, D. Damjanovic, N. Setter
Published in Applied Phys. Letters 88 (2006) 082903-1 – 082903-3 in
Control of Self-Polarization in Doped Single Crystalline Pb(Zr0.5Ti0.5)O-3 Thin Films
Integrated Ferroelectrics. 2022. DOI : 10.1080/10584587.2022.2102807.Theoretical estimation of the linear electro-optic effect in compressively strained c-domain (Ba, Sr)TiO3 thin films using a phenomenological thermodynamic model
Journal Of The Ceramic Society Of Japan. 2019. DOI : 10.2109/jcersj2.19011.Nanoscale Defect Engineering and the Resulting Effects on Domain Wall Dynamics in Ferroelectric Thin Films
Advanced Functional Materials. 2017. DOI : 10.1002/adfm.201605196.Domain nucleation behavior in ferroelectric films with thin and ultrathin top electrodes versus insulating top layers
Thin Solid Films. 2017. DOI : 10.1016/j.tsf.2017.04.046.Charge screening strategy for domain pattern control in nano-scale ferroelectric systems
Scientific Reports. 2017. DOI : 10.1038/s41598-017-05475-x.Dynamics of ferroelectric 180 degrees domain walls at engineered pinning centers
Applied Physics Letters. 2017. DOI : 10.1063/1.4993576.Static negative capacitance of a ferroelectric nano-domain nucleus
Applied Physics Letters. 2017. DOI : 10.1063/1.4989391.Neel-like domain walls in ferroelectric Pb(Zr,Ti)O-3 single crystals
Nature Communications. 2016. DOI : 10.1038/ncomms12385.Controlled creation and displacement of charged domain walls in ferroelectric thin films
Scientific Reports. 2016. DOI : 10.1038/srep31323.Asymmetric structure of 90 deg. domain walls and interactions with defects in PbTiO3
Physical Review B. 2016. DOI : 10.1103/PhysRevB.93.144102.Single-domain (110) PbTiO3 thin films: Thermodynamic theory and experiments
Physical Review B. 2016. DOI : 10.1103/PhysRevB.93.144113.Internal electrical and strain fields influence on the electrical tunability of epitaxial Ba0.7Sr0.3TiO3 thin films
Applied Physics Letters. 2016. DOI : 10.1063/1.4944997.The variation of PbTiO3 bandgap at ferroelectric phase transition
Journal of Physics: Condensed Matter. 2016. DOI : 10.1088/0953-8984/28/2/025501.Structure and pressure-induced ferroelectric phase transition in antiphase domain boundaries of strontium titanate from first principles
Physical Review B. 2016. DOI : 10.1103/PhysRevB.94.054102.What is a ferroelectric-a materials designer perspective
Ferroelectrics. 2016. DOI : 10.1080/00150193.2016.1232104.Velocity Control of 180 degrees Domain Walls in Ferroelectric Thin Films by Electrode Modification
Nano Letters. 2016. DOI : 10.1021/acs.nanolett.5b02798.Thin-film-specific elastic effects in ferroelectric domain structures
Lausanne, EPFL, 2016. DOI : 10.5075/epfl-thesis-6953.Strain Engineering of Electrical Conductivity in Epitaxial Thin Ba0.7Sr0.3TiO3 Film Heterostructures
Lithuanian Journal Of Physics. 2016.Piezoelectric enhancement under negative pressure
Nature Communications. 2016. DOI : 10.1038/ncomms12136.Free-Carrier-Compensated Charged Domain Walls Produced with Super-Bandgap Illumination in Insulating Ferroelectrics
Advanced Materials. 2016. DOI : 10.1002/adma.201602874.Engineered a/c domain patterns in multilayer (110) epitaxial Pb(Zr,Ti)O-3 thin films: Impact on domain compliance and piezoelectric properties
Aip Advances. 2016. DOI : 10.1063/1.4948795.Towards room-temperature deterministic ferroelectric control of ferromagnetic thin films
Lausanne, EPFL, 2015. DOI : 10.5075/epfl-thesis-6904.Thickness Dependence of Domain-Wall Patterns in BiFeO3 Thin Films
Ferroelectrics. 2015. DOI : 10.1080/00150193.2015.1012414.Controlling domain wall motion in ferroelectric thin films
Nature Nanotechnology. 2015. DOI : 10.1038/Nnano.2014.320.Anomalously thick domain walls in ferroelectrics (vol 91, 060102, 2015)
Physical Review B. 2015. DOI : 10.1103/PhysRevB.91.059903.Room temperature concurrent formation of ultra-dense arrays of ferroelectric domain walls
Applied Physics Letters. 2015. DOI : 10.1063/1.4932524.Polarization charge as a reconfigurable quasi-dopant in ferroelectric thin films
Nature Nanotechnology. 2015. DOI : 10.1038/Nnano.2015.114.Post-deposition control of ferroelastic stripe domains and internal electric field by thermal treatment
Applied Physics Letters. 2015. DOI : 10.1063/1.4906295.Polarization Switching and Domain Wall Motion in Circular and Ring Capacitor Structures in PZT Thin Films
Ferroelectrics. 2015. DOI : 10.1080/00150193.2015.1012421.Monocrystalline PZT thin films : toward controlled growth and controlled domain patterns
Lausanne, EPFL, 2015. DOI : 10.5075/epfl-thesis-6654.Polarity of translation boundaries in antiferroelectric PbZrO3
Materials Research Bulletin. 2015. DOI : 10.1016/j.materresbull.2014.11.024.In Search of Ferroelectricity in Antiferroelectric Lead Zirconate
Lausanne, EPFL, 2015. DOI : 10.5075/epfl-thesis-6504.Quantum properties of charged ferroelectric domain walls
Physical Review B. 2015. DOI : 10.1103/PhysRevB.92.214112.Effective-surface-energy approach for size effects in ferroics
Physical Review B. 2015. DOI : 10.1103/PhysRevB.91.125432.Formation of charged ferroelectric domain walls with controlled periodicity
Scientific Reports. 2015. DOI : 10.1038/srep15819.Negative-pressure-induced enhancement in a freestanding ferroelectric
Nature Materials. 2015. DOI : 10.1038/Nmat4365.Non-volatile polarization switch of magnetic domain wall velocity
Applied Physics Letters. 2015. DOI : 10.1063/1.4937999.Anomalously thick domain walls in ferroelectrics
Physical Review B. 2015. DOI : 10.1103/PhysRevB.91.060102.Bent Ferroelectric Domain Walls as Reconfigurable Metallic-Like Channels
Nano Letters. 2015. DOI : 10.1021/acs.nanolett.5b03450.Moving antiphase boundaries using an external electric field
Applied Physics Letters. 2015. DOI : 10.1063/1.4935122.Closed-circuit domain quadruplets in BaTiO3 nanorods embedded in a SrTiO3 film
Physical Review B. 2014. DOI : 10.1103/PhysRevB.89.060101.Lattice dynamics and antiferroelectricity in PbZrO3 tested by x-ray and Brillouin light scattering
Physical Review B. 2014. DOI : 10.1103/PhysRevB.90.144301.Compliant ferroelastic domains in epitaxial Pb(Zr, Ti)O-3 thin films
Applied Physics Letters. 2014. DOI : 10.1063/1.4874835.Analysis of composition homogeneity and polarization orientation of PZT submicron fibers by micro-Raman spectroscopy
Journal Of The European Ceramic Society. 2014. DOI : 10.1016/j.jeurceramsoc.2014.02.030.Superdomain Structure in Epitaxial Tetragonal PZT Thin Films Under Tensile Strain
Ferroelectrics. 2014. DOI : 10.1080/00150193.2014.893802.Effect of elastic compliances and higher order Landau coefficients on the phase diagram of single domain epitaxial Pb(Zr, Ti)O-3 (PZT) thin films
Aip Advances. 2014. DOI : 10.1063/1.4905265.Persistent conductive footprints of 109 degrees domain walls in bismuth ferrite films
Applied Physics Letters. 2014. DOI : 10.1063/1.4869851.Influence of flexoelectric coupling on domain patterns in ferroelectrics
Physical Review B. 2014. DOI : 10.1103/PhysRevB.89.174105.Controlled stripes of ultrafine ferroelectric domains
Nature Communications. 2014. DOI : 10.1038/ncomms5677.Solid Solutions of Lead Metaniobate-Stabilization of the Ferroelectric Polymorph and the Effect on the Lattice Parameters, Dielectric, Ferroelectric, and Piezoelectric Properties
Journal of the American Ceramic Society. 2014. DOI : 10.1111/jace.12628.Elastic Coupling between Nonferroelastic Domain Walls
Physical Review Letters. 2014. DOI : 10.1103/PhysRevLett.113.207601.Domain wall conduction in bismuth ferrite thin films
Lausanne, EPFL, 2013. DOI : 10.5075/epfl-thesis-5654.Piezoelectric properties of twinned ferroelectric perovskites with head-to-head and tail-to-tail domain walls
Physical Review B. 2013. DOI : 10.1103/PhysRevB.88.024114.Structural phase transitions and electronic phenomena at 180-degree domain walls in rhombohedral BaTiO3
Physical Review B. 2013. DOI : 10.1103/PhysRevB.87.054111.Ferroelectric control of magnetic domains in ultra-thin cobalt layers
Applied Physics Letters. 2013. DOI : 10.1063/1.4833495.Defect ordering and defect-domain-wall interactions in PbTiO3: A first-principles study
Physical Review B. 2013. DOI : 10.1103/PhysRevB.88.214116.Bistability of ferroelectric domain walls: Morphotropic boundary and strain effects
Physical Review B. 2013. DOI : 10.1103/PhysRevB.88.024102.(Co-Ti-O)/Bi-Ti-O Multilayer Films with High-Frequency Electromagnetic Response
Japanese Journal of Applied Physics. 2013. DOI : 10.7567/Jjap.52.09Ka14.Conductivity and Ferroelectric Hysteresis in Bi4Ti3O12 Single Crystals Around Room Temperature
Ferroelectrics. 2013. DOI : 10.1080/00150193.2013.822725.The origin of antiferroelectricity in PbZrO3
Nature Communications. 2013. DOI : 10.1038/ncomms3229.Free-electron gas at charged domain walls in insulating BaTiO3
Nature Communications. 2013. DOI : 10.1038/ncomms2839.Ferroelectric Lead Metaniobate and its Solid Solutions: Solid State Synthesis and Characterization
2012. 21st IEEE International Symposium on Applications of Ferroelectrics held jointly with 11th European Conference on the Applications of Polar Dielectrics and 4th Conference on Piezoresponse Force Microscopy and Nanoscale Phenomena in Polar Materials, Aveiro, PORTUGAL, JUL 09-13, 2012. DOI : 10.1109/ISAF.2012.6297854.Macroscopic Theory of Charged Domain Walls in Ferroelectrics
Lausanne, EPFL, 2012. DOI : 10.5075/epfl-thesis-5303.Dielectric and Piezoelectric Properties of K(Ta0.51Nb0.49)O3 Single Crystal
Ferroelectrics. 2012. DOI : 10.1080/00150193.2013.821919.Polarization screening in polymer ferroelectric films: Uncommon bulk mechanism
Applied Physics Letters. 2012. DOI : 10.1063/1.4754146.Impact of Strain Effects on the Stability of Ising Walls in Ferroelectrics
Ferroelectrics. 2012. DOI : 10.1080/00150193.2012.744213.Dielectric properties of K(Ta0.55Nb0.45)O-3 Single Crystal
2012. 21st IEEE International Symposium on Applications of Ferroelectrics held jointly with 11th European Conference on the Applications of Polar Dielectrics and 4th Conference on Piezoresponse Force Microscopy and Nanoscale Phenomena in Polar Materials. DOI : 10.1109/ISAF.2012.6297842.Mechanism of hydrothermal growth of ferroelectric PZT nanowires
Journal of Crystal Growth. 2012. DOI : 10.1016/j.jcrysgro.2012.03.022.Bichiral structure of ferroelectric domain walls driven by flexoelectricity
Physical Review B. 2012. DOI : 10.1103/PhysRevB.86.134102.Enhanced electromechanical response of ferroelectrics due to charged domain walls
Nature Communications. 2012. DOI : 10.1038/ncomms1751.Ferroelectric charged domain walls in an applied electric field
Physical Review B. 2012. DOI : 10.1103/PhysRevB.86.104104.Magnetic domain wall propagation under ferroelectric control
Physical Review B. 2012. DOI : 10.1103/PhysRevB.86.235130.Dielectric properties of K(Ta0.53Nb0.47)O-3 Single Crystal
2012. 21st IEEE International Symposium on Applications of Ferroelectrics held jointly with 11th European Conference on the Applications of Polar Dielectrics and 4th Conference on Piezoresponse Force Microscopy and Nanoscale Phenomena in Polar Materials. DOI : 10.1109/ISAF.2012.6297842.Non-volatile ferroelectric gating of magnetotransport anisotropy in (Ga,Mn)(As,P)
Applied Physics Letters. 2012. DOI : 10.1063/1.4731245.Cold-Field Switching in PVDF-TrFE Ferroelectric Polymer Nanomesas
Physical Review Letters. 2012. DOI : 10.1103/PhysRevLett.108.027603.Long-term retention in organic ferroelectric-graphene memories
Applied Physics Letters. 2012. DOI : 10.1063/1.3676055.Unusual dielectric behavior and domain structure in rhombohedral phase of BaTiO3 single crystals
Journal of Applied Physics. 2011. DOI : 10.1063/1.3605494.Size effect in ferroelectrics: Competition between geometrical and crystalline symmetries
Physical Review B. 2011. DOI : 10.1103/PhysRevB.83.014104.Head-to-head and tail-to-tail 180^{°} domain walls in an isolated ferroelectric
Physical Review B. 2011. DOI : 10.1103/PhysRevB.83.184104.Growth-mode induced defects in epitaxial SrTiO3 thin films grown on single crystal LaAlO3 by a two-step PLD process
Journal of Materials Research. 2011. DOI : 10.1557/jmr.2010.82.Polarization Reversal in BiFeO3 Capacitors: Complex Behavior Revealed by PFM
Ferroelectrics. 2011. DOI : 10.1080/00150193.2011.594326.Enhanced Curie temperature and nonvolatile switching of ferromagnetism in ultrathin (Ga,Mn)As channels
Physical Review B. 2011. DOI : 10.1103/PhysRevB.83.115203.Adsorbate-localized states at water-covered (100) SrTiO[sub 3] surfaces
Applied Physics Letters. 2011. DOI : 10.1063/1.3529473.Thermally Induced Cooperative Molecular Reorientation and Nanoscale Polarization Switching Behaviors of Ultrathin Poly(vinylidene fluoride-trifluoroethylene) Films
The Journal of Physical Chemistry B. 2011. DOI : 10.1021/jp2061442.Structure Determination and Compositional Modification of Body-Centered Tetragonal PX-Phase Lead Titanate
Chemistry of Materials. 2011. DOI : 10.1021/cm1030206.Polarization Screening in Multiferroic (Ga,Mn)As/P(VDF-TrFE) Transistors
Ferroelectrics. 2011. DOI : 10.1080/00150193.2011.594738.Control of the Screening Ability at a Ferroelectric-Semiconductor Interface
Ferroelectrics. 2011. DOI : 10.1080/00150193.2011.594410.Ferroelectric polymer gates for non-volatile field effect control of ferromagnetism in (Ga, Mn)As layers
Nanotechnology. 2011. DOI : 10.1088/0957-4484/22/25/254004.Improved Screening Ability of Ferroelectric-Semiconductor Interface
2011. Joint Meeting of the 19th IEEE International Symposium on the Applications of Ferroelectrics/10th European Conference on the Applications of Polar Dielectrics, Edinburgh, SCOTLAND, Aug 09-12, 2010. p. 1959 - 1961. DOI : 10.1109/TUFFC.2011.2037.Integration of Coplanar Barium-Strontium Titanate Tunable Capacitors on Micro-Machined Silicon
2010. International Conference on Electroceramics (ICE-2009), Delhi, INDIA, Dec 13-17, 2009. p. 110 - 119. DOI : 10.1080/10584587.2010.488560.Low-Symmetry Phases in Ferroelectric Nanowires
Nano Letters. 2010. DOI : 10.1021/nl9034708.Ferroelectric Polymer Gate Transistor as a Model System for Exploring the Mechanisms of the Retention Loss
2010. Joint Meeting of 12th International Meeting on Ferroelectricity/18th IEEE International Symposium on Applications of Ferroelectrics (IMF-ISAF-2009), Xian, PEOPLES R CHINA, Aug 23-27, 2009. p. 185 - 189. DOI : 10.1080/00150193.2010.486237.PFM investigation of stress induced ferroelastic switching in piezoelectric bulk ceramics
2010. 2010 IEEE International Symposium on the Applications of Ferroelectrics (ISAF), Edinbourgh, Scottland, August 2010. DOI : 10.1109/ISAF.2010.5712232.Ferroelectric Nanowires : an Investigation in Synthesis, Characterization, Functionality, and Modeling of Finite Size Effects
Lausanne, EPFL, 2010. DOI : 10.5075/epfl-thesis-4914.Structural complexity of (Na0.5Bi0.5)TiO3-BaTiO3 as revealed by Raman spectroscopy
Physical Review B. 2010. DOI : 10.1103/PhysRevB.82.104112.Synchrotron X-ray diffraction study on a single nanowire of PX-phase lead titanate
Journal of the European Ceramic Society. 2010. DOI : 10.1016/j.jeurceramsoc.2010.07.014.Self-assembled ferroelectric-dielectric nanocomposite films for tunable applications
2010. Conference on Fundamentals and Technology of Multifunctional Oxide Thin Films (Symposium G, EMRS 2009 Spring Meeting), Strasbourg, FRANCE, Jun 08-12, 2009. DOI : 10.1088/1757-899X/8/1/012010.The stress-assisted enhancement of piezoelectric properties due to mechanically incompatible domain structures in BaTiO3
2010. 2010 IEEE International Symposium on the Applications of Ferroelectrics (ISAF), Edinbourgh, Scottland, August 2010. DOI : 10.1109/ISAF.2010.5712237.Anomalous dielectric peak in Mg and Li doped ZnO ceramics and thin films
Applied Physics Letters. 2010. DOI : 10.1063/1.3505930.Structural Property and Electric Field Response of a Single Perovskite PbTiO3 Nanowire Using Micro X-ray Beam
Japanese Journal Of Applied Physics. 2010. DOI : 10.1143/JJAP.49.09MC09.Electrical tuning of dc bias induced acoustic resonances in paraelectric thin films (vol 104, 094102, 2008)
Journal of Applied Physics. 2010. DOI : 10.1063/1.3357393.Preface to Special Topic: Invited Papers from the International Symposium on Piezoresponse Force Microscopy and Nanoscale Phenomena in Polar Materials, Aveiro, Portugal, 2009
Journal of Applied Physics. 2010. DOI : 10.1063/1.3474648.Ferroelectric Polymer Gates for Persistent Field Effect Control of Ferromagnetism in (Ga,Mn)As Layers
Lausanne, EPFL, 2010. DOI : 10.5075/epfl-thesis-4886.Antiferrodistortive Structural Phase Transition in Compressively-Strained Epitaxial SrTiO3 Film Grown on (La, Sr)(Al, Ta)O-3 Substrate
2010. International Conference on Electroceramics (ICE-2009), Delhi, INDIA, Dec 13-17, 2009. p. 57 - 62. DOI : 10.1080/10584587.2010.488545.Tunable thin film bulk acoustic wave resonator based on BaxSr1-xTiO3 thin film
IEEE Transactions on Ultrasonics, Ferroelectrics and Frequency Control. 2010. DOI : 10.1109/TUFFC.2010.1417.Effect of mechanical loading on the tuning of acoustic resonances in Ba (x) Sr1-x TiO3 thin films
Journal Of Electroceramics. 2010. DOI : 10.1007/s10832-009-9564-0.Cation-site intrinsic defects in Zn-doped CdTe
Physical Review B. 2010. DOI : 10.1103/PhysRevB.81.075215.Strong ferroelectric domain-wall pinning in BiFeO3 ceramics
Journal of Applied Physics. 2010. DOI : 10.1063/1.3490249.A hybrid density functional study of lithium in ZnO: Stability, ionization levels, and diffusion
Physical Review B. 2009. DOI : 10.1103/PhysRevB.80.195205.Intrinsic defects in CdTe and CdZnTe alloys
Physica B: Condensed Matter. 2009. DOI : 10.1016/j.physb.2009.08.251.HREM studies of twins in Cd1−xZnxTe (x ≈ 0.04) thin films grown by molecular beam epitaxy
Journal of Alloys and Compounds. 2009. DOI : 10.1016/j.jallcom.2009.05.036.Properties and phase transitions in lead free piezoelectrics : (K,Na)NbO3-LiNbO3 and (Bi,Na)TiO3-BaTiO3
Lausanne, EPFL, 2009. DOI : 10.5075/epfl-thesis-4528.Control of Ferromagnetism in a (Ga,Mn)As - Based Multiferroic System via a Ferroelectric Gate
2009. 29th International Conference on Physics of Semiconductors, Rio de Janeiro, BRAZIL, Jul 27-Aug 01, 2008. p. 471 - 472. DOI : 10.1063/1.3295510.Retention in nonvolatile silicon transistors with an organic ferroelectric gate
Applied Physics Letters. 2009. DOI : 10.1063/1.3158959.Polar phonons in some compressively stressed epitaxial and polycrystalline SrTiO3 thin films
Journal of Electroceramics. 2009. DOI : 10.1007/s10832-008-9494-2.Self-Assembled Perovskite-Fluorite Oblique Nanostructures for Adaptive (Tunable) Electronics
Advanced Materials. 2009. DOI : 10.1002/adma.200800253.Erratum: Evidence for dielectric aging due to progressive 180° domain wall pinning in polydomain Pb(Zr0.45Ti0.55)O3 thin films [Phys. Rev. B 79, 054104 (2009)]
Physical Review B. 2009. DOI : 10.1103/PhysRevB.79.219903.Electromechanics on the Nanometer Scale: Emerging Phenomena, Devices, and Applications
MRS Bulletin. 2009. DOI : 10.1557/mrs2009.174.Non-180° domains in LiTaO3 thin films deposited by metal organic chemical vapor deposition
Applied Physics Letters. 2009. DOI : 10.1063/1.3204451.Micromachined tunable devices based on silicon integrated BaxSr1-xTiO3 thin films : concepts, fabrication and characterization
Lausanne, EPFL, 2009. DOI : 10.5075/epfl-thesis-4284.Evidence for dielectric aging due to progressive 180 degrees domain wall pinning in polydomain Pb(Zr0.45Ti0.55)O-3 thin films
Physical Review B. 2009. DOI : 10.1103/PhysRevB.79.054104.Large-scale fabrication of titanium-rich perovskite PZT submicro/nano wires and their electromechanical properties
IEEE Transactions on Ultrasonics, Ferroelectrics and Frequency Control. 2009. DOI : 10.1109/TUFFC.2009.1254.Structure and Energy of Charged Domain Walls in Ferroelectrics
2009. 18th IEEE International Symposium on Applications of Ferroelectrics, Xian, PEOPLES R CHINA, Aug 23-27, 2009. p. 37 - 42. DOI : 10.1109/ISAF.2009.5307622.Special Issue on: International Conference on Electroceramics
Journal Of Electroceramics. 2009. DOI : 10.1007/s10832-008-9498-y.Toward a low-voltage multiferroic transistor: Magnetic (Ga,Mn)As under ferroelectric control
Applied Physics Letters. 2009. DOI : 10.1063/1.3076107.Li-related defects in ZnO : hybrid functional calculations
Physica B: Condensed Matter. 2009. DOI : 10.1016/j.physb.2009.08.165.Piezoresponse force microscopy on doubly clamped KNbO3 nanowires
Applied Physics Letters. 2008. DOI : 10.1063/1.3000385.1T Memory Cell Based on PVDF-TrFE Field Effect Transistor
2008. Material Research Society Spring meeting 2008, MRS 2008. p. 1067 - B03. DOI : 10.1557/PROC-1067-B03-02.Restricted domain growth and polarization reversal kinetics in ferroelectric polymer thin films
Journal of Applied Physics. 2008. DOI : 10.1063/1.2907990.High-temperature instability of Li- and Ta-modified (K,Na)NbO3 piezoceramics
Journal of the American Ceramic Society. 2008. DOI : 10.1111/j.1551-2916.2008.02392.x.Size effect in metal/ferroelectric/metal heterostructures:Depolarizing effect vs. short-range coupling
2008. 17th IEEE International Symposium on the Applications of Ferroelectrics, Feb 23-28 2008. DOI : 10.1109/ISAF.2008.4693765.Non-volatile ferroelectric control of ferromagnetism in (Ga, Mn)As
Nature Materials. 2008. DOI : 10.1038/nmat2185.La0.5Sr0.5Fe1-yMyO3-[delta] (M = Ti, Ta) perovskite oxides for oxygen separation membranes
Lausanne, EPFL, 2008. DOI : 10.5075/epfl-thesis-4137.Trends in Ferroelectric/Piezoelectric Ceramics
Piezoelectricity: Evolution and Future of a Technology; Berlin: Springer, 2008. p. 553 - 570.Reliability study of tunable ferroelectric capacitors
Journal of Applied Physics. 2008. DOI : 10.1063/1.2978353.Electrical tuning of dc bias induced acoustic resonances in paraelectric thin films
Journal of Applied Physics. 2008. DOI : 10.1063/1.2999642.Short-range and long-range contributions to the size effect in metal-ferroelectric-metal heterostructures
Physical Review B. 2008. DOI : 10.1103/PhysRevB.77.174111.Surface-stimulated phenomena in the polarization response of ferroelectrics
Lausanne, EPFL, 2008. DOI : 10.5075/epfl-thesis-4082.Polarisation reversal in ferroelectric PVDF and PZT films
Lausanne, EPFL, 2008. DOI : 10.5075/epfl-thesis-4097.Ferroelectric control of ferromagnetism in diluted magnetic semiconductors
2008. 17th IEEE International Symposium on Applications of Ferroelectrics, Santa Fe, NM, Feb 23-28, 2008. p. 197 - 198. DOI : 10.1109/ISAF.2008.4693725.Raman spectroscopy of (K,Na)NbO3 and (K,Na)(1-x)LixNbO3
Applied Physics Letters. 2008. DOI : 10.1063/1.3056658.Low voltage Ferroelectric FET with sub-100nm copolymer P(VDF-TrFE) gate dielectric for non-volatile 1T memory
2008. p. 162 - 165. DOI : 10.1109/ESSDERC.2008.4681724.Tunable ferroelectric thin films with enhanced responses through nano- structural control
2007. 16th IEEE International Symposium on Applications of Ferroelectrics, Nara, Japan, May 27-31, 2007. p. 195 - 197. DOI : 10.1109/ISAF.2007.4393211.Rotator and extender ferroelectrics: Importance of the shear coefficient to the piezoelectric properties of domain-engineered crystals and ceramics
Journal Of Applied Physics. 2007. DOI : 10.1063/1.2653925.Growth process approaches for improved properties of tunable ferroelectric thin films
Journal Of The European Ceramic Society. 2007. DOI : 10.1016/j.jeurceramsoc.2007.02.027.Large and stable thickness coupling coefficients of [001](C)-oriented KNbO3 and Li-modified (K,Na)NbO3 single crystals
Applied Physics Letters. 2007. DOI : 10.1063/1.2472524.Giant domain wall contribution to the dielectric susceptibility in BaTiO3 single crystals
Applied Physics Letters. 2007. DOI : 10.1063/1.2751135.Transmission-electron-microscopy study of quasi-epitaxial tungsten-bronze (Sr2.5Ba2.5Nb10O30) thin film on perovskite (SrTO3) single crystal
Journal Of Materials Research. 2007. DOI : 10.1557/jmr.2007.0018.Ferroelectric Gate on AlGaN/GaN Heterostructures
2007. 15th IEEE International Symposium on Applications of Ferroelectrics, Sunset Beach, NC, JUL 30-AUG 03, 2006. p. 82 - 85. DOI : 10.1109/ISAF.2006.4387839.Preparation and properties of KNbO3-based piezoelectric ceramics
Lausanne, EPFL, 2007. DOI : 10.5075/epfl-thesis-3856.A study of the phase diagram of (K,Na,Li)NbO3 determined by dielectric and piezoelectric measurements, and Raman spectroscopy
Journal Of Applied Physics. 2007. DOI : 10.1063/1.2752799.DC bias dependent shift of resonance frequencies in BST thin film membranes
2007. 16th IEEE International Symposium on Applications of Ferroelectrics, Nara, JAPAN, May 27-31, 2007. p. 236 - 238. DOI : 10.1109/ISAF.2007.4393226.Ferroelectricity in asymmetric metal-ferroelectric-metal heterostructures: A combined first-principles-phenomenological approach
Physical Review Letters. 2007. DOI : 10.1103/PhysRevLett.98.207601.Model of a low-permittivity and high-tunability ferroelectric based composite
Applied Physics Letters. 2007. DOI : 10.1063/1.2723681.Microwave phase shifters based on sol-gel derived Ba0.3Sr0.7TiO3 ferroelectric thin films
2007. 2nd European Microwave Integrated Circuits Conference, Munich, GERMANY, Oct 08-10, 2007. p. 497 - 500. DOI : 10.1109/EMICC.2007.4412758.Uniaxial-stress induced phase transitions in [001](C)-poled 0.955Pb(Zn1/3Nb2/3)O-3-0.045PbTiO(3)
Applied Physics Letters. 2007. DOI : 10.1063/1.2721856.Nonvolatile gate effect in the PZT/AlGaN/GaN heterostructure
Journal Of The European Ceramic Society. 2007. DOI : 10.1016/j.jeurceramsoc.2007.02.150.Qualitative distinction in enhancement of the piezoelectric response in PbTiO3 in proximity of coercive fields: 90 degrees versus 180 degrees switching
Journal Of Applied Physics. 2007. DOI : 10.1063/1.2733594.First-principles description of ferroelectric/electrode interfaces and properties of not very thin ferroelectric capacitors
2007. 16th IEEE International Symposium on Applications of Ferroelectrics, Nara, JAPAN, May 27-31, 2007. p. 243 - 246. DOI : 10.1109/ISAF.2007.4393228.Microwave phase shifters based on sol-gel derived Ba0.3Sr0.7TiO3 ferroelectric thin films
2007. 37th European Microwave Conference, Munich, GERMANY, Oct 08-12, 2007. p. 1295 - 1298. DOI : 10.1109/EUMC.2007.4405439.Erratum: Ferroelectricity in asymmetric metal-ferroelectric-metal heterostructures: A combined first-principles-phenomenological approach (vol 98, art no 207601, 2007)
Physical Review Letters. 2007. DOI : 10.1103/PhysRevLett.99.029901.Ferroelectric domains and piezoelectricity in monocrystalline Pb(Zr,Ti)O-3 nanowires
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Japanese Journal of Applied Physics. 2003. DOI : 10.1143/JJAP.42.6094.{100}-textured, piezoelectric Pb(Zr-x Ti1-x)O-3 thin films for MEMS: integration, deposition and properties
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Ferroelectrics. 2015. DOI : 10.1080/00150193.2015.1012414.Controlling domain wall motion in ferroelectric thin films
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Applied Physics Letters. 2015. DOI : 10.1063/1.4932524.Polarization charge as a reconfigurable quasi-dopant in ferroelectric thin films
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Applied Physics Letters. 2015. DOI : 10.1063/1.4906295.Polarization Switching and Domain Wall Motion in Circular and Ring Capacitor Structures in PZT Thin Films
Ferroelectrics. 2015. DOI : 10.1080/00150193.2015.1012421.Monocrystalline PZT thin films : toward controlled growth and controlled domain patterns
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Physical Review B. 2015. DOI : 10.1103/PhysRevB.92.214112.Effective-surface-energy approach for size effects in ferroics
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Applied Physics Letters. 2015. DOI : 10.1063/1.4937999.Anomalously thick domain walls in ferroelectrics
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Applied Physics Letters. 2014. DOI : 10.1063/1.4874835.Analysis of composition homogeneity and polarization orientation of PZT submicron fibers by micro-Raman spectroscopy
Journal Of The European Ceramic Society. 2014. DOI : 10.1016/j.jeurceramsoc.2014.02.030.Superdomain Structure in Epitaxial Tetragonal PZT Thin Films Under Tensile Strain
Ferroelectrics. 2014. DOI : 10.1080/00150193.2014.893802.Effect of elastic compliances and higher order Landau coefficients on the phase diagram of single domain epitaxial Pb(Zr, Ti)O-3 (PZT) thin films
Aip Advances. 2014. DOI : 10.1063/1.4905265.Persistent conductive footprints of 109 degrees domain walls in bismuth ferrite films
Applied Physics Letters. 2014. DOI : 10.1063/1.4869851.Influence of flexoelectric coupling on domain patterns in ferroelectrics
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Physical Review Letters. 2014. DOI : 10.1103/PhysRevLett.113.207601.Solid Solutions of Lead Metaniobate-Stabilization of the Ferroelectric Polymorph and the Effect on the Lattice Parameters, Dielectric, Ferroelectric, and Piezoelectric Properties
Journal of the American Ceramic Society. 2014. DOI : 10.1111/jace.12628.Domain wall conduction in bismuth ferrite thin films
Lausanne, EPFL, 2013. DOI : 10.5075/epfl-thesis-5654.Piezoelectric properties of twinned ferroelectric perovskites with head-to-head and tail-to-tail domain walls
Physical Review B. 2013. DOI : 10.1103/PhysRevB.88.024114.Structural phase transitions and electronic phenomena at 180-degree domain walls in rhombohedral BaTiO3
Physical Review B. 2013. DOI : 10.1103/PhysRevB.87.054111.Ferroelectric control of magnetic domains in ultra-thin cobalt layers
Applied Physics Letters. 2013. DOI : 10.1063/1.4833495.Defect ordering and defect-domain-wall interactions in PbTiO3: A first-principles study
Physical Review B. 2013. DOI : 10.1103/PhysRevB.88.214116.Bistability of ferroelectric domain walls: Morphotropic boundary and strain effects
Physical Review B. 2013. DOI : 10.1103/PhysRevB.88.024102.(Co-Ti-O)/Bi-Ti-O Multilayer Films with High-Frequency Electromagnetic Response
Japanese Journal of Applied Physics. 2013. DOI : 10.7567/Jjap.52.09Ka14.Conductivity and Ferroelectric Hysteresis in Bi4Ti3O12 Single Crystals Around Room Temperature
Ferroelectrics. 2013. DOI : 10.1080/00150193.2013.822725.The origin of antiferroelectricity in PbZrO3
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2012. 21st IEEE International Symposium on Applications of Ferroelectrics held jointly with 11th European Conference on the Applications of Polar Dielectrics and 4th Conference on Piezoresponse Force Microscopy and Nanoscale Phenomena in Polar Materials, Aveiro, PORTUGAL, JUL 09-13, 2012. DOI : 10.1109/ISAF.2012.6297854.Macroscopic Theory of Charged Domain Walls in Ferroelectrics
Lausanne, EPFL, 2012. DOI : 10.5075/epfl-thesis-5303.Dielectric and Piezoelectric Properties of K(Ta0.51Nb0.49)O3 Single Crystal
Ferroelectrics. 2012. DOI : 10.1080/00150193.2013.821919.Polarization screening in polymer ferroelectric films: Uncommon bulk mechanism
Applied Physics Letters. 2012. DOI : 10.1063/1.4754146.Impact of Strain Effects on the Stability of Ising Walls in Ferroelectrics
Ferroelectrics. 2012. DOI : 10.1080/00150193.2012.744213.Dielectric properties of K(Ta0.55Nb0.45)O-3 Single Crystal
2012. 21st IEEE International Symposium on Applications of Ferroelectrics held jointly with 11th European Conference on the Applications of Polar Dielectrics and 4th Conference on Piezoresponse Force Microscopy and Nanoscale Phenomena in Polar Materials. DOI : 10.1109/ISAF.2012.6297842.Mechanism of hydrothermal growth of ferroelectric PZT nanowires
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Physical Review B. 2012. DOI : 10.1103/PhysRevB.86.235130.Dielectric properties of K(Ta0.53Nb0.47)O-3 Single Crystal
2012. 21st IEEE International Symposium on Applications of Ferroelectrics held jointly with 11th European Conference on the Applications of Polar Dielectrics and 4th Conference on Piezoresponse Force Microscopy and Nanoscale Phenomena in Polar Materials. DOI : 10.1109/ISAF.2012.6297842.Non-volatile ferroelectric gating of magnetotransport anisotropy in (Ga,Mn)(As,P)
Applied Physics Letters. 2012. DOI : 10.1063/1.4731245.Cold-Field Switching in PVDF-TrFE Ferroelectric Polymer Nanomesas
Physical Review Letters. 2012. DOI : 10.1103/PhysRevLett.108.027603.Long-term retention in organic ferroelectric-graphene memories
Applied Physics Letters. 2012. DOI : 10.1063/1.3676055.Unusual dielectric behavior and domain structure in rhombohedral phase of BaTiO3 single crystals
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Physical Review B. 2011. DOI : 10.1103/PhysRevB.83.014104.Head-to-head and tail-to-tail 180^{°} domain walls in an isolated ferroelectric
Physical Review B. 2011. DOI : 10.1103/PhysRevB.83.184104.Growth-mode induced defects in epitaxial SrTiO3 thin films grown on single crystal LaAlO3 by a two-step PLD process
Journal of Materials Research. 2011. DOI : 10.1557/jmr.2010.82.Polarization Reversal in BiFeO3 Capacitors: Complex Behavior Revealed by PFM
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Physical Review B. 2011. DOI : 10.1103/PhysRevB.83.115203.Adsorbate-localized states at water-covered (100) SrTiO[sub 3] surfaces
Applied Physics Letters. 2011. DOI : 10.1063/1.3529473.Thermally Induced Cooperative Molecular Reorientation and Nanoscale Polarization Switching Behaviors of Ultrathin Poly(vinylidene fluoride-trifluoroethylene) Films
The Journal of Physical Chemistry B. 2011. DOI : 10.1021/jp2061442.Structure Determination and Compositional Modification of Body-Centered Tetragonal PX-Phase Lead Titanate
Chemistry of Materials. 2011. DOI : 10.1021/cm1030206.Polarization Screening in Multiferroic (Ga,Mn)As/P(VDF-TrFE) Transistors
Ferroelectrics. 2011. DOI : 10.1080/00150193.2011.594738.Control of the Screening Ability at a Ferroelectric-Semiconductor Interface
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Nanotechnology. 2011. DOI : 10.1088/0957-4484/22/25/254004.Improved Screening Ability of Ferroelectric-Semiconductor Interface
2011. Joint Meeting of the 19th IEEE International Symposium on the Applications of Ferroelectrics/10th European Conference on the Applications of Polar Dielectrics, Edinburgh, SCOTLAND, Aug 09-12, 2010. p. 1959 - 1961. DOI : 10.1109/TUFFC.2011.2037.Integration of Coplanar Barium-Strontium Titanate Tunable Capacitors on Micro-Machined Silicon
2010. International Conference on Electroceramics (ICE-2009), Delhi, INDIA, Dec 13-17, 2009. p. 110 - 119. DOI : 10.1080/10584587.2010.488560.Low-Symmetry Phases in Ferroelectric Nanowires
Nano Letters. 2010. DOI : 10.1021/nl9034708.Ferroelectric Polymer Gate Transistor as a Model System for Exploring the Mechanisms of the Retention Loss
2010. Joint Meeting of 12th International Meeting on Ferroelectricity/18th IEEE International Symposium on Applications of Ferroelectrics (IMF-ISAF-2009), Xian, PEOPLES R CHINA, Aug 23-27, 2009. p. 185 - 189. DOI : 10.1080/00150193.2010.486237.PFM investigation of stress induced ferroelastic switching in piezoelectric bulk ceramics
2010. 2010 IEEE International Symposium on the Applications of Ferroelectrics (ISAF), Edinbourgh, Scottland, August 2010. DOI : 10.1109/ISAF.2010.5712232.Structural complexity of (Na0.5Bi0.5)TiO3-BaTiO3 as revealed by Raman spectroscopy
Physical Review B. 2010. DOI : 10.1103/PhysRevB.82.104112.Synchrotron X-ray diffraction study on a single nanowire of PX-phase lead titanate
Journal of the European Ceramic Society. 2010. DOI : 10.1016/j.jeurceramsoc.2010.07.014.Self-assembled ferroelectric-dielectric nanocomposite films for tunable applications
2010. Conference on Fundamentals and Technology of Multifunctional Oxide Thin Films (Symposium G, EMRS 2009 Spring Meeting), Strasbourg, FRANCE, Jun 08-12, 2009. DOI : 10.1088/1757-899X/8/1/012010.Structural Property and Electric Field Response of a Single Perovskite PbTiO3 Nanowire Using Micro X-ray Beam
Japanese Journal Of Applied Physics. 2010. DOI : 10.1143/JJAP.49.09MC09.Electrical tuning of dc bias induced acoustic resonances in paraelectric thin films (vol 104, 094102, 2008)
Journal of Applied Physics. 2010. DOI : 10.1063/1.3357393.Preface to Special Topic: Invited Papers from the International Symposium on Piezoresponse Force Microscopy and Nanoscale Phenomena in Polar Materials, Aveiro, Portugal, 2009
Journal of Applied Physics. 2010. DOI : 10.1063/1.3474648.Ferroelectric Polymer Gates for Persistent Field Effect Control of Ferromagnetism in (Ga,Mn)As Layers
Lausanne, EPFL, 2010. DOI : 10.5075/epfl-thesis-4886.Antiferrodistortive Structural Phase Transition in Compressively-Strained Epitaxial SrTiO3 Film Grown on (La, Sr)(Al, Ta)O-3 Substrate
2010. International Conference on Electroceramics (ICE-2009), Delhi, INDIA, Dec 13-17, 2009. p. 57 - 62. DOI : 10.1080/10584587.2010.488545.Tunable thin film bulk acoustic wave resonator based on BaxSr1-xTiO3 thin film
IEEE Transactions on Ultrasonics, Ferroelectrics and Frequency Control. 2010. DOI : 10.1109/TUFFC.2010.1417.Effect of mechanical loading on the tuning of acoustic resonances in Ba (x) Sr1-x TiO3 thin films
Journal Of Electroceramics. 2010. DOI : 10.1007/s10832-009-9564-0.Cation-site intrinsic defects in Zn-doped CdTe
Physical Review B. 2010. DOI : 10.1103/PhysRevB.81.075215.Strong ferroelectric domain-wall pinning in BiFeO3 ceramics
Journal of Applied Physics. 2010. DOI : 10.1063/1.3490249.Ferroelectric Nanowires : an Investigation in Synthesis, Characterization, Functionality, and Modeling of Finite Size Effects
Lausanne, EPFL, 2010. DOI : 10.5075/epfl-thesis-4914.Anomalous dielectric peak in Mg and Li doped ZnO ceramics and thin films
Applied Physics Letters. 2010. DOI : 10.1063/1.3505930.The stress-assisted enhancement of piezoelectric properties due to mechanically incompatible domain structures in BaTiO3
2010. 2010 IEEE International Symposium on the Applications of Ferroelectrics (ISAF), Edinbourgh, Scottland, August 2010. DOI : 10.1109/ISAF.2010.5712237.A hybrid density functional study of lithium in ZnO: Stability, ionization levels, and diffusion
Physical Review B. 2009. DOI : 10.1103/PhysRevB.80.195205.Intrinsic defects in CdTe and CdZnTe alloys
Physica B: Condensed Matter. 2009. DOI : 10.1016/j.physb.2009.08.251.HREM studies of twins in Cd1−xZnxTe (x ≈ 0.04) thin films grown by molecular beam epitaxy
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Lausanne, EPFL, 2009. DOI : 10.5075/epfl-thesis-4528.Control of Ferromagnetism in a (Ga,Mn)As - Based Multiferroic System via a Ferroelectric Gate
2009. 29th International Conference on Physics of Semiconductors, Rio de Janeiro, BRAZIL, Jul 27-Aug 01, 2008. p. 471 - 472. DOI : 10.1063/1.3295510.Retention in nonvolatile silicon transistors with an organic ferroelectric gate
Applied Physics Letters. 2009. DOI : 10.1063/1.3158959.Polar phonons in some compressively stressed epitaxial and polycrystalline SrTiO3 thin films
Journal of Electroceramics. 2009. DOI : 10.1007/s10832-008-9494-2.Self-Assembled Perovskite-Fluorite Oblique Nanostructures for Adaptive (Tunable) Electronics
Advanced Materials. 2009. DOI : 10.1002/adma.200800253.Erratum: Evidence for dielectric aging due to progressive 180° domain wall pinning in polydomain Pb(Zr0.45Ti0.55)O3 thin films [Phys. Rev. B 79, 054104 (2009)]
Physical Review B. 2009. DOI : 10.1103/PhysRevB.79.219903.Electromechanics on the Nanometer Scale: Emerging Phenomena, Devices, and Applications
MRS Bulletin. 2009. DOI : 10.1557/mrs2009.174.Non-180° domains in LiTaO3 thin films deposited by metal organic chemical vapor deposition
Applied Physics Letters. 2009. DOI : 10.1063/1.3204451.Micromachined tunable devices based on silicon integrated BaxSr1-xTiO3 thin films : concepts, fabrication and characterization
Lausanne, EPFL, 2009. DOI : 10.5075/epfl-thesis-4284.Evidence for dielectric aging due to progressive 180 degrees domain wall pinning in polydomain Pb(Zr0.45Ti0.55)O-3 thin films
Physical Review B. 2009. DOI : 10.1103/PhysRevB.79.054104.Large-scale fabrication of titanium-rich perovskite PZT submicro/nano wires and their electromechanical properties
IEEE Transactions on Ultrasonics, Ferroelectrics and Frequency Control. 2009. DOI : 10.1109/TUFFC.2009.1254.Structure and Energy of Charged Domain Walls in Ferroelectrics
2009. 18th IEEE International Symposium on Applications of Ferroelectrics, Xian, PEOPLES R CHINA, Aug 23-27, 2009. p. 37 - 42. DOI : 10.1109/ISAF.2009.5307622.Special Issue on: International Conference on Electroceramics
Journal Of Electroceramics. 2009. DOI : 10.1007/s10832-008-9498-y.Toward a low-voltage multiferroic transistor: Magnetic (Ga,Mn)As under ferroelectric control
Applied Physics Letters. 2009. DOI : 10.1063/1.3076107.Li-related defects in ZnO : hybrid functional calculations
Physica B: Condensed Matter. 2009. DOI : 10.1016/j.physb.2009.08.165.Piezoresponse force microscopy on doubly clamped KNbO3 nanowires
Applied Physics Letters. 2008. DOI : 10.1063/1.3000385.Restricted domain growth and polarization reversal kinetics in ferroelectric polymer thin films
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Journal of the American Ceramic Society. 2008. DOI : 10.1111/j.1551-2916.2008.02392.x.Size effect in metal/ferroelectric/metal heterostructures:Depolarizing effect vs. short-range coupling
2008. 17th IEEE International Symposium on the Applications of Ferroelectrics, Feb 23-28 2008. DOI : 10.1109/ISAF.2008.4693765.Non-volatile ferroelectric control of ferromagnetism in (Ga, Mn)As
Nature Materials. 2008. DOI : 10.1038/nmat2185.La0.5Sr0.5Fe1-yMyO3-[delta] (M = Ti, Ta) perovskite oxides for oxygen separation membranes
Lausanne, EPFL, 2008. DOI : 10.5075/epfl-thesis-4137.Trends in Ferroelectric/Piezoelectric Ceramics
Piezoelectricity: Evolution and Future of a Technology; Berlin: Springer, 2008. p. 553 - 570.Reliability study of tunable ferroelectric capacitors
Journal of Applied Physics. 2008. DOI : 10.1063/1.2978353.Electrical tuning of dc bias induced acoustic resonances in paraelectric thin films
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Physical Review B. 2008. DOI : 10.1103/PhysRevB.77.174111.Surface-stimulated phenomena in the polarization response of ferroelectrics
Lausanne, EPFL, 2008. DOI : 10.5075/epfl-thesis-4082.Polarisation reversal in ferroelectric PVDF and PZT films
Lausanne, EPFL, 2008. DOI : 10.5075/epfl-thesis-4097.Ferroelectric control of ferromagnetism in diluted magnetic semiconductors
2008. 17th IEEE International Symposium on Applications of Ferroelectrics, Santa Fe, NM, Feb 23-28, 2008. p. 197 - 198. DOI : 10.1109/ISAF.2008.4693725.Raman spectroscopy of (K,Na)NbO3 and (K,Na)(1-x)LixNbO3
Applied Physics Letters. 2008. DOI : 10.1063/1.3056658.Low voltage Ferroelectric FET with sub-100nm copolymer P(VDF-TrFE) gate dielectric for non-volatile 1T memory
2008. p. 162 - 165. DOI : 10.1109/ESSDERC.2008.4681724.1T Memory Cell Based on PVDF-TrFE Field Effect Transistor
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Applied Physics Letters. 2007. DOI : 10.1063/1.2751135.Transmission-electron-microscopy study of quasi-epitaxial tungsten-bronze (Sr2.5Ba2.5Nb10O30) thin film on perovskite (SrTO3) single crystal
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2007. 15th IEEE International Symposium on Applications of Ferroelectrics, Sunset Beach, NC, JUL 30-AUG 03, 2006. p. 82 - 85. DOI : 10.1109/ISAF.2006.4387839.Preparation and properties of KNbO3-based piezoelectric ceramics
Lausanne, EPFL, 2007. DOI : 10.5075/epfl-thesis-3856.A study of the phase diagram of (K,Na,Li)NbO3 determined by dielectric and piezoelectric measurements, and Raman spectroscopy
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Physical Review Letters. 2007. DOI : 10.1103/PhysRevLett.98.207601.Model of a low-permittivity and high-tunability ferroelectric based composite
Applied Physics Letters. 2007. DOI : 10.1063/1.2723681.Microwave phase shifters based on sol-gel derived Ba0.3Sr0.7TiO3 ferroelectric thin films
2007. 2nd European Microwave Integrated Circuits Conference, Munich, GERMANY, Oct 08-10, 2007. p. 497 - 500. DOI : 10.1109/EMICC.2007.4412758.Uniaxial-stress induced phase transitions in [001](C)-poled 0.955Pb(Zn1/3Nb2/3)O-3-0.045PbTiO(3)
Applied Physics Letters. 2007. DOI : 10.1063/1.2721856.Nonvolatile gate effect in the PZT/AlGaN/GaN heterostructure
Journal Of The European Ceramic Society. 2007. DOI : 10.1016/j.jeurceramsoc.2007.02.150.Qualitative distinction in enhancement of the piezoelectric response in PbTiO3 in proximity of coercive fields: 90 degrees versus 180 degrees switching
Journal Of Applied Physics. 2007. DOI : 10.1063/1.2733594.First-principles description of ferroelectric/electrode interfaces and properties of not very thin ferroelectric capacitors
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Physical Review Letters. 2007. DOI : 10.1103/PhysRevLett.99.029901.Annealing effect on dislocations in SrTiO3/LaAlO3 heterostructures
Journal Of Applied Physics. 2007. DOI : 10.1063/1.2710281.The Impact of chemical ordering on the dielectric properties of lead scandium tantalate Pb(Sc1/2Ta1/2)O-3 thin films
Journal of Applied Physics. 2007. DOI : 10.1063/1.2770834.Processing and properties of ferroelectric relaxor lead scandium tantalate Pb(Sc1/2Ta1/2)O-3 thin films
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Applied Physics Letters. 2007. DOI : 10.1063/1.2719673.Landau thermodynamic potential for BaTiO3
Journal Of Applied Physics. 2007. DOI : 10.1063/1.2733744.Tuning of direct current bias-induced resonances in micromachined Ba[sub 0.3]Sr[sub 0.7]TiO[sub 3] thin-film capacitors
Journal of Applied Physics. 2007. DOI : 10.1063/1.2822203.Effects of film orientation on ferroelectric and piezoelectric properties of lanthanoid-substituted Bi4Ti3O12 thin films
Japanese Journal of Applied Physics. 2007. DOI : 10.1143/JJAP.46.686.DC bias-dependent shift of the resonance frequencies in BST thin film membranes
IIEEE Transactions on Ultrasonics, Ferroelectrics and Frequency Control. 2007. DOI : 10.1109/TUFFC.2007.565.Compositional inhomogeneity in Li- and Ta-modified (K, Na)NbO3 ceramics
Journal of the American Ceramic Society. 2007. DOI : 10.1111/j.1551-2916.2007.01962.x.PZT thin film growth and chemical composition control on flat and novel three-dimensional micromachined structures for MEMS devices
Lausanne, EPFL, 2007. DOI : 10.5075/epfl-thesis-3820.Processing and dielectric characterization of Ba0.3Sr0.7TiO3 thin films on alumina substrates
Journal Of The European Ceramic Society. 2007. DOI : 10.1016/j.jeurceramsoc.2006.11.020.Quantum well ZnCdTe/CdTe structures with integrated ferroelectric gates
2007. 16th IEEE International Symposium on Applications of Ferroelectrics, Nara, JAPAN, May 27-31, 2007. p. 52 - 53. DOI : 10.1109/ISAF.2007.4393165.Relation between processing, microstructure and electric field-dependent dielectric properties of Ba0.3Sr0.7TiO3 thin films on alumina substrates
Integrated Ferroelectrics. 2007. DOI : 10.1080/10584580701756334.Ferroelectric polymer gate on AlGaN/GaN heterostructures
Journal of Applied Physics. 2007. DOI : 10.1063/1.2817646.Temperature stability of the piezoelectric properties of Li-modified KNN ceramics
Journal Of The European Ceramic Society. 2007. DOI : 10.1016/j.jeurceramsoc.2007.02.100.Ferroelectric gate on AlGaN/GaN heterostructures
Lausanne, EPFL, 2007. DOI : 10.5075/epfl-thesis-3821.Rotator and extender ferroelectrics: Importance of the shear coefficient to the piezoelectric properties of domain-engineered crystals and ceramics
Journal Of Applied Physics. 2007. DOI : 10.1063/1.2653925.Ferroelectric domains and piezoelectricity in monocrystalline Pb(Zr,Ti)O-3 nanowires
Applied Physics Letters. 2007. DOI : 10.1063/1.2716842.Large and stable thickness coupling coefficients of [001](C)-oriented KNbO3 and Li-modified (K,Na)NbO3 single crystals
Applied Physics Letters. 2007. DOI : 10.1063/1.2472524.Temperature dependence of the direct piezoelectric effect in relaxor-ferroelectric single crystals: Intrinsic and extrinsic contributions
Journal Of Applied Physics. 2006. DOI : 10.1063/1.2358408.In-plane versus out-of-plane dielectric response in the thin-film relaxor Pb(Sc1/2Ta1/2)O-3
Physical Review B. 2006. DOI : 10.1103/PhysRevB.73.214112.Broad-band dielectric response of PbMg1/3Nb2/3O3 relaxor ferroelectrics: Single crystals, ceramics and thin films
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Journal Of Applied Physics. 2006. DOI : 10.1063/1.2336995.Growth of single-crystalline KNbO3 nanostructures
The Journal of Physical Chemistry B. 2006. DOI : 10.1021/jp053800a.In-plane and out-of-plane ferroelectric instabilities in epitaxial SrTiO3 films
Physical Review Letters. 2006. DOI : 10.1103/PhysRevLett.96.157602.Ferroelectric film switching via oblique domain growth observed by cross-sectional nanoscale imaging
Applied Physics Letters. 2006. DOI : 10.1063/1.2338432.Nonvolatile gate effect in a ferroelectric-semiconductor quantum well
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Applied Physics Letters. 2004. DOI : 10.1063/1.1690878.Polarization response of Perovskite films for microwave tunable applications
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Ceramics International. 2004. DOI : 10.1016/j.ceramint.2003.12.021.Monodomain versus polydomain piezoelectric response of 0.67Pb(Mg1/3Nb2/3)O-3-0.33PbTiO(3) single crystals along nonpolar directions
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Applied Physics Letters. 2003. DOI : 10.1063/1.1559951.Shift of phase transition temperature in strontium titanate thin films
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Inorganic Chemistry Communications. 2002. DOI : 10.1016/S1387-7003(02)00390-8.Processing and electrical properties of screen-printed PZT thick films
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Ferroelectrics. 1999. DOI : 10.1080/00150199908260545.Exploring polarisation switching and imprint in fatigued Pt-PZT-Pt FECAPs by atomic force microscopy
Integrated Ferroelectrics. 1999. DOI : 10.1080/10584589908228466.Microstructure and defects of wurtzite structure thin films
Journal of the European Ceramic Society. 1999. DOI : 10.1016/S0955-2219(98)00453-1.Microscopic observation of "region by region" polarisation domains freezing during fatigue of the Pt-PZT-Pt system
Integrated Ferroelectrics. 1998. DOI : 10.1080/10584589808208045.Conducting barrier electrodes for direct contact of PZT thin films on tungsten
Journal of the Korean Physical Society. 1998.Acetic acid based sol-gel PLZT thin films: Processing and characterization
Journal of Sol-Gel Science and Technology. 1998. DOI : 10.1023/A:1008646501240.Dopant and microstructure effects on switching properties of PZT thin films
Lausanne, EPFL, 1998. DOI : 10.5075/epfl-thesis-1805.Cold-field-emission test of the fatigued state of Pb(ZrxTi1-x)O-3 films
Applied Physics Letters. 1998. DOI : 10.1063/1.122374.Investigation of pyroelectric thin films and their application in micromachined infrared detectors
Lausanne, EPFL, 1998. DOI : 10.5075/epfl-thesis-1862.Influence of processing parameters on characteristics of sol-gel derived PLZT thin films
Journal De Physique Iv. 1998. DOI : 10.1051/jp4:1998906.Direct observation of region by region suppression of the switchable polarization (fatigue) in Pb(Zr,Ti)O-3 thin film capacitors with Pt electrodes
Applied Physics Letters. 1998. DOI : 10.1063/1.121083.Gas spectrometry based on pyroelectric thin-film arrays integrated on silicon
Sensors and Actuators A: Physical. 1998. DOI : 10.1016/S0924-4247(97)01736-6.Transient photocurrents in lead zirconate titanate thin films
Applied Physics Letters. 1998. DOI : 10.1063/1.120663.Electromechanical properties of sol-gel derived Ca-modified PbTiO3 films
Applied Physics Letters. 1998. DOI : 10.1063/1.121608.Ultrasonic flexural Lamb-wave actuators based on PZT thin film
Sensors and Actuators A: Physical. 1998. DOI : 10.1016/S0924-4247(98)80056-3.Self-polarization effect in Pb(Zr,Ti)O-3 thin films
Integrated Ferroelectrics. 1998. DOI : 10.1080/10584589808208071.Discrimination between bulk and interface scenarios for the suppression of the switchable polarization (fatigue) in Pb(Zr,Ti)O-3 thin films capacitors with Pt electrodes
Applied Physics Letters. 1998. DOI : 10.1063/1.121386.Dielectric properties of complex perovskite lead scandium tantalate under dc bias
Journal of the American Ceramic Society. 1998. DOI : 10.1111/j.1151-2916.1998.tb02519.x.Relaxor behavior and electromechanical properties of Pb(Mg1/3Nb2/3)O-3 thin films
Applied Physics Letters. 1998. DOI : 10.1063/1.121702.Cold-field-emission test of the fatigued state of Pb(ZnxTi1-x)O-3 films (vol 73, pg 1361, 1998)
Applied Physics Letters. 1998. DOI : 10.1063/1.122437.High figure-of-merit porous Pb1-xCaxTiO3 thin films for pyroelectric applications
Applied Physics Letters. 1998. DOI : 10.1063/1.121391.Removal of 90 degrees domain pinning in (100) Pb(Zr0.15Ti0.85)O-3 thin films by pulsed operation
Applied Physics Letters. 1998. DOI : 10.1063/1.121554.TEM of antiferroelectric-ferroelectric phase boundary in (Pb1-xBax)(Zr1-xTix)O-3 solid solution
British Ceramic Transactions. 1997.Photoinduced poling of lead titanate zirconate thin films
Applied Physics Letters. 1997. DOI : 10.1063/1.120154.Electromechanical properties of SrBi2Ta2O9 thin films
Applied Physics Letters. 1997. DOI : 10.1063/1.119782.Wavelength tunable fiber Bragg grating devices based on sputter deposited resistive and piezoelectric coatings
Journal of Vacuum Science & Technology a-Vacuum Surfaces and Films. 1997. DOI : 10.1116/1.580871.Influence de l'élaboration et de la microstructure sur le déplacement des parois de domaine et les propriétés électro-mécaniques de céramiques de Pb(Zr, Ti)O3 et BaTiO3
Lausanne, EPFL, 1997. DOI : 10.5075/epfl-thesis-1593.PZT phase formation monitored by high-temperature X-ray diffractometry
Journal of the European Ceramic Society. 1997. DOI : 10.1016/S0955-2219(96)00133-1.Pyroelectric thin-film sensor array
Sensors and Actuators A: Physical. 1997. DOI : 10.1016/S0924-4247(97)01484-2.Piezoelectric and dielectric aging in Pb(Zr,Ti)O-3 thin films and bulk ceramics
Integrated Ferroelectrics. 1997. DOI : 10.1080/10584589708015722.Influence of texture on the switching behavior of Pb(Zr0.70Ti0.30)O3 sol-gel derived thin films
Journal of Materials Research. 1997. DOI : 10.1557/JMR.1997.0076.Dielectric measurements on high-Q ceramics in the microwave region
Journal of the American Ceramic Society. 1997. DOI : 10.1111/j.1151-2916.1997.tb02951.x.Pyroelectric thin film sensor arrays integrated on silicon
Ferroelectrics. 1997. DOI : 10.1080/00150199708228363.Piezoelectric bismuth titanate ceramics for high temperature applications
Lausanne, EPFL, 1997. DOI : 10.5075/epfl-thesis-1646.Use of ferroelectric hysteresis parameters for evaluation of niobium effects in lead zirconate titanate thin films
Journal of the American Ceramic Society. 1997. DOI : 10.1111/j.1151-2916.1997.tb02835.x.Non-linear dielectric response of Pb(Mg1/3 Nb2/3)O3 relaxor ferroelectric
Lausanne, EPFL, 1997. DOI : 10.5075/epfl-thesis-1665.Sol-gel processing of PNZST thin films on Ti/Pt and Ta/Pt metallizations
Journal of the European Ceramic Society. 1997. DOI : 10.1016/S0955-2219(95)00221-9.Germination et croissance de films minces de Pb(Zr, Ti)O3 sur silicium passivé et substrats métalliques
Lausanne, EPFL, 1997. DOI : 10.5075/epfl-thesis-1689.Wavelength tunable fiber Bragg grating devices based on sputter deposited resistive and piezoelectric coatings (vol 15, pg 1791, 1997)
Journal of Vacuum Science & Technology a-Vacuum Surfaces and Films. 1997. DOI : 10.1116/1.580833.Piezoelectric coatings for active optical fiber devices
Ferroelectrics. 1997. DOI : 10.1080/00150199708228349.Microfabricated Lamb wave device based on PZT sol-gel thin film for mechanical transport of solid particles and liquids
Journal of Microelectromechanical Systems. 1997. DOI : 10.1109/84.650131.Fatigue of piezoelectric properties in Pb(Zr,Ti)O-3 films
Applied Physics Letters. 1996. DOI : 10.1063/1.116189.Instabilities in the piezoelectric properties of ferroelectric ceramics
Sensors and Actuators A: Physical. 1996. DOI : 10.1016/0924-4247(96)80160-9.Sputter deposited piezoelectric fiber coatings for acousto-optic modulators
Journal of Vacuum Science & Technology a-Vacuum Surfaces and Films. 1996. DOI : 10.1116/1.580393.Piezoelectric properties of Ca-modified PbTiO3 thin films
Applied Physics Letters. 1996. DOI : 10.1063/1.117220.Design of a novel thin-film piezoelectric accelerometer
Sensors and Actuators A: Physical. 1996. DOI : 10.1016/S0924-4247(96)01324-6.Microstructure, electrical conductivity, and piezoelectric properties of bismuth titanate
Journal of the American Ceramic Society. 1996. DOI : 10.1111/j.1151-2916.1996.tb08086.x.High frequency dielectric relaxation in Pb(Sc1/2Ta1/2)O-3 ceramics
Materials Science and Engineering B-Solid State Materials for Advanced Technology. 1996. DOI : 10.1016/0921-5107(95)01377-6.Pb(Zr,Ti)O3 thin films on zirconium membranes for micromechanical applications
Applied Physics Letters. 1996. DOI : 10.1063/1.116529.Fabrication and structural analysis of ZnO coated fiber optic phase modulators
Journal of Materials Research. 1996. DOI : 10.1557/JMR.1996.0258.Interferometric measurements of electric field-induced displacements in piezoelectric thin films
Review of Scientific Instruments. 1996. DOI : 10.1063/1.1147000.Sol-gel deposition of PZT thin films on ceramic ZrO2 substrates
1996. ISAF '96. Tenth IEEE International Symposium on Applications of Ferroelectrics, East Brunswick, NJ, USA, 18-21.8.1996. p. 611 - 614. DOI : 10.1109/ISAF.1996.598059.Pb(Zr,Ti)O3 thin films by in-situ reactive sputtering on micromachined membranes for micromechanical applications
1995. Ceramic films and coatings, Sheffield (UK), 19-20.12.1994. p. 207 - 218.Micromachined PZT thin film actuators for micromotors
Oberflächen Werkstoffe. 1995.Relationship between Nanostructure and Dielectric Response of Lead Scandium Tantalate .1. Structure and Domain Textures
Physica B: Condensed Matter. 1995. DOI : 10.1016/0921-4526(94)00907-D.Far-infrared dielectric response of PbTiO3 and PbZr1-xTixO3 thin ferroelectric films
Journal of Physics: Condensed Matter. 1995. DOI : 10.1088/0953-8984/7/22/013.Investigation of Pb(Zr0.70Ti0.30)O-3 thin films of different textures on Ti/Pt electrodes
Microelectronic Engineering. 1995. DOI : 10.1016/0167-9317(95)00163-8.Microstructure of PZT sol-gel films on Pt substrates with different adhesion layers
Microelectronic Engineering. 1995. DOI : 10.1016/0167-9317(95)00164-6.Chemical analysis of lead zirconium titanium oxide films
1995. Congrès Trinoculaire des Microscopies Électroniques, Lausanne (CH).Spontaneous (Zero-Field) Relaxor-to-Ferroelectric-Phase Transition in Disordered Pb(Sc1/2nb1/2)O-3
Journal of Applied Physics. 1995. DOI : 10.1063/1.358856.A Thin-Film Pyroelectric Detector
Integrated Ferroelectrics. 1995. DOI : 10.1080/10584589508019367.Effect of Nb Doping on the Microstructure of Sol-Gel-Derived Pzt Thin-Films
Journal of the American Ceramic Society. 1995. DOI : 10.1111/j.1151-2916.1995.tb08846.x.Characterization of PZT thin films for micromotors
Microelectronic Engineering. 1995. DOI : 10.1016/0167-9317(95)00116-6.Identification of Passive Layer in Ferroelectric Thin-Films from Their Switching Parameters
Journal of Applied Physics. 1995. DOI : 10.1063/1.360122.In-situ sputter deposition of PT and PZT films on platinum and RuO2 electrodes
Microelectronic Engineering. 1995. DOI : 10.1016/0167-9317(95)00139-5.Characterisation of the fatigued state of ferroelectric PZT thin-film capacitors
Microelectronic Engineering. 1995. DOI : 10.1016/0167-9317(95)00133-6.PZT films for micro-pumps
Integrated Ferroelectrics. 1995. DOI : 10.1080/10584589508012296.Effect of ferroelectric polarization on current response of PZT thin films
Integrated Ferroelectrics. 1995. DOI : 10.1080/10584589508012276.Hybrid ultrasonic elastic force motors micromachined in silicon
Integrated Ferroelectrics. 1995. DOI : 10.1080/10584589508012297.Dielectric-Spectroscopy of Ba(B'b-1/2''(1/2))O-3 Complex Perovskite Ceramics - Correlations between Ionic Parameters and Microwave Dielectric-Properties .1. Infrared Reflectivity Study (10(12)-10(14) Hz)
Journal of Applied Physics. 1995. DOI : 10.1063/1.359597.Dielectric-Spectroscopy of Ba(B'b-1/2''(1/2))O-3 Complex Perovskite Ceramics - Correlations between Ionic Parameters and Microwave Dielectric-Properties .2. Studies Below the Phonon Eigenfrequencies (10(12)-10(12) Hz)
Journal of Applied Physics. 1995. DOI : 10.1063/1.359290.Role of Defects in the Ferroelectric Relaxer Lead Scandium Tantalate
Journal of the American Ceramic Society. 1995. DOI : 10.1111/j.1151-2916.1995.tb08915.x.Depletion and Depolarizing Effects in Ferroelectric Thin-Films and Their Manifestations in Switching and Fatigue
Integrated Ferroelectrics. 1995. DOI : 10.1080/10584589508019374.Interferometric study of piezoelectric degradation in ferroelectric thin films
Microelectronic Engineering. 1995. DOI : 10.1016/0167-9317(95)00157-3.Correlations between instrinsic material parameters and dielectric properties in ceramics for microwave applications
Lausanne, EPFL, 1995. DOI : 10.5075/epfl-thesis-1339.Effect of Nb doping on the hysteresis parameters of sol-gel derived Pb-1.1-x/2(Zr0.53TiO0.47)(1-x)NbxO3 thin films
Microelectronic Engineering. 1995. DOI : 10.1016/0167-9317(95)00159-X.Fatigue, Rejuvenation and Self-Restoring in Ferroelectric Thin-Films
Integrated Ferroelectrics. 1995. DOI : 10.1080/10584589508012569.Sol-gel PbTiO3 thin films for pyroelectric applications
Lausanne, EPFL, 1995. DOI : 10.5075/epfl-thesis-1343.DC-voltage and cycling induced recovery of switched polarisation in fatigued ferroelectric thin films
Integrated Ferroelectrics. 1995. DOI : 10.1080/10584589508012285.Fabrication and Characterization of Pzt Thin-Film Vibrators for Micromotors
Sensors and Actuators A: Physical. 1995. DOI : 10.1016/0924-4247(95)00994-9.Piezoelectricity and Phase-Transitions of the Mixed-Layer Bismuth Titanate Niobate Bi7Ti4NbO21
Journal of the American Ceramic Society. 1995. DOI : 10.1111/j.1151-2916.1995.tb09099.x.Processing and properties of thin film pyroelectric devices
Microelectronic Engineering. 1995. DOI : 10.1016/0167-9317(95)00122-0.Lead Loss, Preferred Orientation, and the Dielectric-Properties of Sol-Gel Prepared Lead Titanate Thin-Films
Applied Physics Letters. 1994. DOI : 10.1063/1.112600.Orientation of rapid thermally annealed lead zirconate titanate thin films on (111) Pt substrates
Journal of Materials Research. 1994. DOI : 10.1557/JMR.1994.2540.Properties of Piezoelectric Pzt Thin Films for Microactuator Applications
1994. MRS conference "Materials for Smart Systems", Boston, Massachusetts, USA, 28-30.11.1994. DOI : 10.1557/PROC-360-429.Thin piezoelectric films for micro-electromechanical components
1994. First Swiss Conference on Materials Research for Engineering Systems, Sion (CH), 8-9.9.1994. p. 142 - 146.The ferroelectric phase transition in complex perkovskite relaxors
Lausanne, EPFL, 1994. DOI : 10.5075/epfl-thesis-1248.Dielectric and Structural Characteristics of Ba-Based and Sr-Based Complex Perovskites as a Function of Tolerance Factor
Japanese Journal of Applied Physics. 1994. DOI : 10.1143/JJAP.33.3984.B-Site Order and Infrared Reflectivity in a(B'b'')O3 Complex Perovskite Ceramics
Journal of Applied Physics. 1994. DOI : 10.1063/1.357618.Dielectric-Properties of Lanthanum Gallate (Lagao3) Crystal
Journal of Applied Physics. 1994. DOI : 10.1063/1.355993.Investigation of Pt/Ti Bilayer Metallization on Silicon for Ferroelectric Thin-Film Integration
Journal of Applied Physics. 1994. DOI : 10.1063/1.355889.Processing of sol-gel PZT films for microactuators
1994. Electroceramics IV, Aachen (DE), 5-7.9.1994. p. 407 - 410.Use of Transmission Electron-Microscopy for the Characterization of Rapid Thermally Annealed, Solution-Gel, Lead-Zirconate-Titanate Films
Journal of the American Ceramic Society. 1994. DOI : 10.1111/j.1151-2916.1994.tb05394.x.Structure of Ba(Y1/2(+3)Ta1/2(+5))O3 and Its Dielectric-Properties in the Range 10(2)-10(14)-Hz, 20-600 K
Journal of Applied Physics. 1994. DOI : 10.1063/1.358401.Relation between Intrinsic Microwave and Submillimeter Losses and Permittivity in Dielectrics
Solid State Communications. 1993. DOI : 10.1016/0038-1098(93)90812-2.Effect of Structural-Changes in Complex Perovskites on the Temperature-Coefficient of the Relative Permittivity
Journal of Applied Physics. 1993. DOI : 10.1063/1.354569.The Spontaneous Relaxor-Ferroelectric Transition of Pb(Sc0.5ta0.5)O3
Journal of Applied Physics. 1993. DOI : 10.1063/1.354300.DiP256: The Temperature-Coefficient of the Relative Permittivity of Complex Perovskites and Its Relation to Structural Transformations
Ferroelectrics. 1992. DOI : 10.1080/00150199208218002.DiP230: Dielectric-Spectroscopy of Some Ba(B'1/2b''1/2)O3 Complex Perovskites in the 10(11)-10(14)Hz Range
Ferroelectrics. 1992. DOI : 10.1080/00150199208218000.Electron-Diffraction Analysis of the Ferroelectric Aluminate Sodalite Sr8[Al12o24](Cro4)2
Ferroelectrics. 1991. DOI : 10.1080/00150199108008250.Transmission Electron-Microscopy Investigation of the Aluminate Sodalite Ca8[Al12o24](Wo4)2 at Room-Temperature
Ferroelectrics. 1991. DOI : 10.1080/00150199108209402.Ferroelectricity in the Reba2cu3o7-Delta Superconductors
Materials Letters. 1988. DOI : 10.1016/0167-577X(88)90114-0.Preparation Variables for the Gdba2cu3o6.5+Delta Superconductive Ceramics
Materials Research Bulletin. 1988. DOI : 10.1016/0025-5408(88)90016-5.The Influence of the Preparation Method on the Properties of Sr8(Al12o24)(Cro4)2 Ferroelectric Ceramics
Materials Research Bulletin. 1988. DOI : 10.1016/0025-5408(88)90154-7.Preferred Orientation of the Grains in the Ceramics of High Tc Superconductors
Ferroelectrics Letters Section. 1988. DOI : 10.1080/07315178808200669.The Observation of B-Site Ordering by Raman-Scattering in a(B'b'')O3 Perovskites
Applied Spectroscopy. 1987. DOI : 10.1366/0003702874449066.Structure of Cubic Aluminate Sodalite, Sr8[Al12O24](CrO4)2
Acta Crystallographica Section C: Structural Chemistry. 1987. DOI : 10.1107/S0108270187088188.Preparation and Dielectric Measurements of Aluminate-Chromate Sodalite Ceramics
Ferroelectrics Letters Section. 1987. DOI : 10.1080/07315178708200500.Optimizing the Performance of Electrostrictive Ceramics
Materials Science and Engineering. 1985. DOI : 10.1016/0025-5416(85)90260-5.Aluminate Sodalite Sr8[Al12O24](CrO4)2 - a New Ferroelectric Material
Ferroelectrics. 1984. DOI : 10.1080/00150198408012717.The Role of Some Cage Ion Substitutions for the Phase-Transition Characteristics of Aluminate Sodalites
Ferroelectrics. 1984. DOI : 10.1080/00150198408012716.Aluminate-Sodalite Sr8(Al12o24)(Cro4)2 - a New Ferroelectric Material
Ferroelectrics. 1983. DOI : 10.1080/00150198408012717.Diffuse Ferroelectric Phase-Transition and Cation Order in the Solid-Solution System Pb(Sc1/2nb1/2)O3-Pb(Sc1/2ta1/2)O3
Ferroelectrics. 1981. DOI : 10.1080/00150198108223500.An Optical Study of the Ferroelectric Relaxors Pb(Mg1/3nb2/3)O3,Pb(Sc1/2ta1/2)O3, and Pb(Sc1/2nb1/2)O3
Ferroelectrics. 1981. DOI : 10.1080/00150198108223483.Subgrain Ordering in Relaxor Ferroelectrics
American Ceramic Society Bulletin. 1980.Pressure-Dependence of the Dielectric-Properties of Pb(Sc1/2ta1/2)O3
Physica Status Solidi (a). 1980. DOI : 10.1002/pssa.2210610157.Flux Growth of Lead Scandium Tantalate Pb(Sc0.5ta0.5)O3 and Lead Magnesium Niobate Pb(Mg1/3nb2/3)O3 Single-Crystals
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American Ceramic Society Bulletin. 1980.The Role of B-Site Cation Disorder in Diffuse Phase-Transition Behavior of Perovskite Ferroelectrics
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Cement and Concrete Research. 1979. DOI : 10.1016/0008-8846(79)90060-7.Mechanical Features of Chemical Shrinkage of Cement Paste
Cement and Concrete Research. 1978. DOI : 10.1016/0008-8846(78)90045-5.Effect of Fillers on Strength of Cement Mortars
Cement and Concrete Research. 1977. DOI : 10.1016/0008-8846(77)90073-4.Enseignement et PhD
A dirigé les thèses EPFL de
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