Hung-Chi Han

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hung.han@epfl.ch +41 21 693 92 49

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https://orcid.org/0000-0001-9900-5618

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EPFL STI IMT ICLAB
MC B3 284 (Bâtiment MC)
CH-2000 Neuchâtel
CH-2002 Neuchâtel 2

+41 21 693 92 49
EPFL > STI > IEM > ICLAB

Web site: Web site: https://iclab.epfl.ch

EPFL STI IMT AQUA
Rue de la Maladière 71b
Case postale 526
CH-2002 Neuchâtel 2

+41 21 693 92 49
Office: MC B3 284
EPFL > STI > IEM > AQUA

Web site: Web site: https://aqua.epfl.ch/

EPFL > ETU > EDOC > EDMI

EPFL STI IMT AQUA
Rue de la Maladière 71b
CH-2000 Neuchâtel

+41 21 693 92 49
Office: MC B3 284
EPFL > VPO > VPO-SE > OHS > COSEC-STI

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Administrative data

Publications

Infoscience publications

2022

Back-gate effects on DC performance and carrier transport in 22 nm FDSOI technology down to cryogenic temperatures

H.-C. Han; F. Jazaeri; A. D'Amico; Z. Zhao; S. Lehmann et al.

Solid-State Electronics. 2022-07-01. DOI : 10.1016/j.sse.2022.108296.

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SEKV-E: Parameter Extractor of Simplified EKV I-V Model for Low-Power Analog Circuits

H.-C. Han; A. D'Amico; C. Enz

Ieee Open Journal Of Circuits And Systems. 2022-01-01. DOI : 10.1109/OJCAS.2022.3179046.

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Comprehensive Design-oriented FDSOI EKV Model

H.-C. Han; A. D'Amico; C. Enz

2022-01-01. 29th International Conference on Mixed Design of Integrated Circuits and System (MIXDES), Wroclaw, POLAND, Jun 23-24, 2022. p. 40-44. DOI : 10.23919/MIXDES55591.2022.9838014.

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2021

Cryogenic Characterization of 16 nm FinFET Technology for Quantum Computing

H.-C. Han; F. Jazaeri; A. D'Amico; A. Baschirotto; E. Charbon et al.

2021-09-13. 47th European Solid State Circuits Conference (ESSCIRC 2021), Grenoble, France, Septembre 13-22, 2021. p. 71-74. DOI : 10.1109/ESSCIRC53450.2021.9567747.

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In-depth Cryogenic Characterization of 22 nm FDSOI Technology for Quantum Computation

H.-C. Han; F. Jazaeri; A. D'Amico; Z. Zhao; S. Lehmann et al.

2021-09-01. 7th Joint International EuroSOI Workshop and International Conference on Ultimate Integration on Silicon (EuroSOI-ULIS'2021), Caen, France, Septembre 1-3, 2021. p. 1-4. DOI : 10.1109/EuroSOI-ULIS53016.2021.9560181.

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2019

A 4-Terminal Method for Oxide and Semiconductor Trap Characterization in FDSOI MOSFETs

H. C. Han; C. Theodorou; G. Ghibaudo

2019. 25th International Conference on Noise and Fluctuations (ICNF 2019), EPFL Neuchâtel campus - Neuchâtel, Switzerland, 18 - 21 June 2019. DOI : 10.5075/epfl-ICLAB-ICNF-269249.

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Online People Directory

Hung-Chi Han

Publications

Infoscience publications

2022

Back-gate effects on DC performance and carrier transport in 22 nm FDSOI technology down to cryogenic temperatures

SEKV-E: Parameter Extractor of Simplified EKV I-V Model for Low-Power Analog Circuits

Comprehensive Design-oriented FDSOI EKV Model

2021

Cryogenic Characterization of 16 nm FinFET Technology for Quantum Computing

In-depth Cryogenic Characterization of 22 nm FDSOI Technology for Quantum Computation

2019

A 4-Terminal Method for Oxide and Semiconductor Trap Characterization in FDSOI MOSFETs

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