Ashkhen Yesayan
EPFL STI GR-SCI-IEL
ELB 336 (Bâtiment ELB)
Station 11
1015 Lausanne
+41 21 693 83 62
Office: ELB 239
EPFL › STI › IEM › GR-SCI-IEL
Expertise
My research is focused on semiconductor device physics modeling and analysis. My early research focused on contact phenomena in two-dimensional (2D) systems. This was followed by intensive research on the modeling of field-effect transistor (FET) devices, including MOSFETs and FinFETs, nanowire (NW) FETs, and junctionless NW FETs. Particular emphasis has been placed on the development of models for NW ISFETs and NW biosensors, including their dynamic behavior. Nanowire photodiodes and solar cells are another important aspect of my modeling interests. I am currently working on compact modeling of GaN MIS-HEMTs.
Selected publications
Design-Oriented Analytical Model for Nanowire Biosensors Including Dynamic Aspects
A. Yesayan, A. Grabski, F. Jazaeri and J. -M. Sallese,
Published in IEEE TED in 2025
Intrinsic Limitation of 2DEG Modulation in GaN-MISHEMT
A. Yesayan, F. Jazaeri, B. Parvais and J. M. Sallese
Published in IEEE Trans. on Electron Devices in 2025