Focused on semiconductor device physics, modeling, and analysis, with early work exploring contact phenomena in two-dimensional (2D) systems. This was followed by extensive studies on field-effect transistor (FET) technologies, including MOSFETs, FinFETs, nanowire (NW) FETs, and junctionless NW FETs.

Particular emphasis has been placed on the development of models for NW ISFETs and nanowire-based biosensors, including their dynamic behavior. Additional interests include nanowire photodiodes and solar cells.

Current activities are centered on the compact modeling of GaN MIS-HEMTs and advanced semiconductor devices for next-generation electronics.