Christian Enz
+41 21 695 45 30
EPFL › STI › STI-SMT › SMT-ENS
Expertise
Low-Power Analog and RF IC Design
MEMS-Based IC Design
Wireless Sensor Networks
Semiconductor Device Modeling
Noise in Devices and Circuits
Inexact and Error Tolerant Circuits and Systems
MEMS-Based IC Design
Wireless Sensor Networks
Semiconductor Device Modeling
Noise in Devices and Circuits
Inexact and Error Tolerant Circuits and Systems
Links
Expertise
Low-Power Analog and RF IC Design
MEMS-Based IC Design
Wireless Sensor Networks
Semiconductor Device Modeling
Noise in Devices and Circuits
Inexact and Error Tolerant Circuits and Systems
MEMS-Based IC Design
Wireless Sensor Networks
Semiconductor Device Modeling
Noise in Devices and Circuits
Inexact and Error Tolerant Circuits and Systems
Links
Christian C. Enz (M’84, S'12) received the M.S. and Ph.D. degrees in Electrical Engineering from the EPFL in 1984 and 1989 respectively. From 1984 to 1989 he was research assistant at the EPFL, working in the field of micro-power analog IC design. In 1989 he was one of the founders of Smart Silicon Systems S.A. (S3), where he developed several low-noise and low-power ICs, mainly for high energy physics applications. From 1992 to 1997, he was an Assistant Professor at EPFL, working in the field of low-power analog CMOS and BiCMOS IC design and device modeling. From 1997 to 1999, he was Principal Senior Engineer at Conexant (formerly Rockwell Semiconductor Systems), Newport Beach, CA, where he was responsible for the modeling and characterization of MOS transistors for the design of RF CMOS circuits. In 1999, he joined the Swiss Center for Electronics and Microtechnology (CSEM) where he launched and lead the RF and Analog IC Design group. In 2000, he was promoted Vice President, heading the Microelectronics Department, which became the Integrated and Wireless Systems Division in 2009. He joined the EPFL as full professor in 2013, where he is currently the director of the Institute of Microengineering (IMT) and head of the Integrated Circuits Laboratory (ICLAB).
He is lecturing and supervising undergraduate and graduate students in the field of Analog and RF IC Design at EPFL. His technical interests and expertise are in the field of very low-power analog and RF IC design, semiconductor device modeling, and inexact and error tolerant circuits and systems.
He has published more than 200 scientific papers and has contributed to numerous conference presentations and advanced engineering courses. Together with E. Vittoz and F. Krummenacher he is one of the developer of the EKV MOS transistor model and the author of the book "Charge-Based MOS Transistor Modeling - The EKV Model for Low-Power and RF IC Design" (Wiley, 2006). He has been member of several technical program committees, including the International Solid-State Circuits Conference (ISSCC) and European Solid-State Circuits Conference (ESSCIRC). He has served as a vice-chair for the 2000 International Symposium on Low Power Electronics and Design (ISLPED), exhibit chair for the 2000 International Symposium on Circuits and Systems (ISCAS) and chair of the technical program committee for the 2006 European Solid-State Circuits Conference (ESSCIRC). Since 2012 he has been elected as member of the IEEE Solid-State Circuits Society (SSCS) Administrative Commmittee (AdCom). He is also Chair of the IEEE SSCS Chapter of Switzerland.
Information
Research Interests
Selected publications
An ultralow-power UHF transceiver integrated in a standard digital CMOS process: Architecture and receiver.
Porret, A. S., T. Melly, et al.
Published in Ieee Journal of Solid-State Circuits 36(3): 452-466., 2001 in
Addition to
Melly, T., A. S. Porret, et al.
Published in An analysis of flicker noise rejection in low-power and low-voltage CMOS mixers. Ieee Journal of Solid-State Circuits 37(8): 1090-1090., 2002 in
A 1.5-V 75-dB dynamic range third-order G(m)-C filter integrated in a 0.18-mu m standard digital CMOS process.
Yodprasit, U. and C. C. Enz
Published in Ieee Journal of Solid-State Circuits 38(7): 1189-1197., 2003 in
WiseNET: An Ultra Low-Power Concept for Wireless Sensor Networks
Technisches Messen - Platform für Methoden, Systems und Anwendungen in der Messtechnik. 2010.Analysis of Ultralow-Power Asynchronous ADCs
2010. International Symposium on Circuits and Systems Nano-Bio Circuit Fabrics and Systems (ISCAS 2010), Paris, FRANCE, May 30-Jun 02, 2010. p. 3593 - 3596. DOI : 10.1109/ISCAS.2010.5537806.Detailed Analysis of a Phase ADC
2010. p. 4273 - 4276. DOI : 10.1109/ISCAS.2010.5537552.A 5.4dBm 42mW 2.4GHz CMOS BAW-based Quasi-Direct Conversion Transmitter
2010. p. 498 - 499. DOI : 10.1109/ISSCC.2010.5433865.A Multiband Concurrent Sampling based RF Front End for Biotelemetry Applications
2010. International Symposium on Circuits and Systems Nano-Bio Circuit Fabrics and Systems (ISCAS 2010), Paris, FRANCE, May 30-Jun 02, 2010. p. 2948 - 2951. DOI : 10.1109/ISCAS.2010.5538036.A Novel Complex Gm-C IF Sub-Sampling Mixer
2009. European Conference on Circuit Theory Design, Antalya, TURKEY, Aug 23-27, 2009. p. 29 - 32. DOI : 10.1109/ECCTD.2009.5275140.A Concurrent Quadrature Sub-Sampling Mixer for Multiband Receivers
2009. European Conference on Circuit Theory Design, Antalya, TURKEY, Aug 23-27, 2009. p. 271 - 274. DOI : 10.1109/ECCTD.2009.5274924.Analysis of a Novel BAW-based Power Amplifier
2009. p. 375 - 378. DOI : 10.1109/ECCTD.2009.5274992.RF Front-End for Autonomous Low Power Wireless Sensor Nodes
2009A Narrowband Multi-Channel 2.4 GHz MEMS-Based Transceiver
IEEE Journal of Solid-State Circuits. 2009. DOI : 10.1109/JSSC.2008.2007447.TD: Trends in Communication Circuits and Systems
2008. p. 520 - 521. DOI : 10.1109/ISSCC.2008.4523286.Impact of Lateral Asymmetry of MOSFETs on the Gate and Drain Noise Correlation
IEEE Transactions on Electron Devices. 2008. DOI : 10.1109/TED.2008.925935.A Low-Power Programmable Dynamic Frequency Divider
2008. p. 370 - 373.Compact Modeling of Noise in Nonuniform Channel MOSFET
2008.EKV3 MOSFET Compact Model Documentation, Model Version 301.02
2008A low-power 2.4 GHz CMOS receiver using BAW resonators
Lausanne, EPFL, 2008. DOI : 10.5075/epfl-thesis-4141.Ultra Low-Power MEMS-based Radio for Wireless Sensor Networks
FTFC. 2008.A Short Story of the EKV MOS Transistor Model
IEEE Solid-State Circuits Newsletter. 2008. DOI : 10.1109/N-SSC.2008.4785778.SE2: MEMS for Frequency Synthesis and Wireless RF Communications (or Life without Quartz Crystal)
2008. p. 14 - 15. DOI : 10.1109/ISSCC.2008.4523040.Infoscience
WiseNET: An Ultra Low-Power Concept for Wireless Sensor Networks
Technisches Messen - Platform für Methoden, Systems und Anwendungen in der Messtechnik. 2010.Analysis of Ultralow-Power Asynchronous ADCs
2010. International Symposium on Circuits and Systems Nano-Bio Circuit Fabrics and Systems (ISCAS 2010), Paris, FRANCE, May 30-Jun 02, 2010. p. 3593 - 3596. DOI : 10.1109/ISCAS.2010.5537806.Detailed Analysis of a Phase ADC
2010. p. 4273 - 4276. DOI : 10.1109/ISCAS.2010.5537552.A 5.4dBm 42mW 2.4GHz CMOS BAW-based Quasi-Direct Conversion Transmitter
2010. p. 498 - 499. DOI : 10.1109/ISSCC.2010.5433865.A Multiband Concurrent Sampling based RF Front End for Biotelemetry Applications
2010. International Symposium on Circuits and Systems Nano-Bio Circuit Fabrics and Systems (ISCAS 2010), Paris, FRANCE, May 30-Jun 02, 2010. p. 2948 - 2951. DOI : 10.1109/ISCAS.2010.5538036.A Novel Complex Gm-C IF Sub-Sampling Mixer
2009. European Conference on Circuit Theory Design, Antalya, TURKEY, Aug 23-27, 2009. p. 29 - 32. DOI : 10.1109/ECCTD.2009.5275140.A Concurrent Quadrature Sub-Sampling Mixer for Multiband Receivers
2009. European Conference on Circuit Theory Design, Antalya, TURKEY, Aug 23-27, 2009. p. 271 - 274. DOI : 10.1109/ECCTD.2009.5274924.Analysis of a Novel BAW-based Power Amplifier
2009. p. 375 - 378. DOI : 10.1109/ECCTD.2009.5274992.RF Front-End for Autonomous Low Power Wireless Sensor Nodes
2009A Narrowband Multi-Channel 2.4 GHz MEMS-Based Transceiver
IEEE Journal of Solid-State Circuits. 2009. DOI : 10.1109/JSSC.2008.2007447.TD: Trends in Communication Circuits and Systems
2008. p. 520 - 521. DOI : 10.1109/ISSCC.2008.4523286.Impact of Lateral Asymmetry of MOSFETs on the Gate and Drain Noise Correlation
IEEE Transactions on Electron Devices. 2008. DOI : 10.1109/TED.2008.925935.A Low-Power Programmable Dynamic Frequency Divider
2008. p. 370 - 373.Compact Modeling of Noise in Nonuniform Channel MOSFET
2008.EKV3 MOSFET Compact Model Documentation, Model Version 301.02
2008A low-power 2.4 GHz CMOS receiver using BAW resonators
Lausanne, EPFL, 2008. DOI : 10.5075/epfl-thesis-4141.Ultra Low-Power MEMS-based Radio for Wireless Sensor Networks
FTFC. 2008.A Short Story of the EKV MOS Transistor Model
IEEE Solid-State Circuits Newsletter. 2008. DOI : 10.1109/N-SSC.2008.4785778.SE2: MEMS for Frequency Synthesis and Wireless RF Communications (or Life without Quartz Crystal)
2008. p. 14 - 15. DOI : 10.1109/ISSCC.2008.4523040.2024
Thermo-optic epsilon-near-zero effects
Nature Communications. 2024-01-26. DOI : 10.1038/s41467-024-45054-z.An Ultralow Power Short-Range 60-GHz FMCW Radar in 22-nm FDSOI CMOS
Ieee Transactions On Microwave Theory And Techniques. 2024-02-13. DOI : 10.1109/TMTT.2023.3348035.Analytical Modeling of Cryogenic Subthreshold Currents in 22-nm FDSOI Technology
Ieee Electron Device Letters. 2024-01-01. DOI : 10.1109/LED.2023.3331022.2023
Manufacturing-Enabled Tunability of Linear and Nonlinear Epsilon-Near-Zero Properties in Indium Tin Oxide Nanofilms
Acs Applied Materials & Interfaces. 2023-07-14. DOI : 10.1021/acsami.3c06270.Analytical Modeling of Source-to-Drain Tunneling Current Down to Cryogenic Temperatures
Ieee Electron Device Letters. 2023-05-01. DOI : 10.1109/LED.2023.3254592.An improved subthreshold swing expression accounting for back-gate bias in FDSOI FETs
Solid-State Electronics. 2023-02-06. DOI : 10.1016/j.sse.2023.108608.Modeling and analysis of miniaturized magnetorheological valve for fluidic actuation
Lausanne, EPFL, 2023. DOI : 10.5075/epfl-thesis-10341.Monitoring of Protein and pH Levels in Human Biofluids using FD-SOI Silicon Nanowire Arrays
Lausanne, EPFL, 2023. DOI : 10.5075/epfl-thesis-9998.Dual-Polarized SIW Slot Antenna Using ENZ Metamaterial for 5G and mmWave Applications
2023-01-01. 17th European Conference on Antennas and Propagation (EuCAP), Florence, ITALY, Mar 26-31, 2023. DOI : 10.23919/EuCAP57121.2023.10133482.Design of Cryo-CMOS Analog Circuits using the Gm/ID Approach
2023-01-01. 56th IEEE International Symposium on Circuits and Systems (ISCAS), Monterey, CA, May 21-25, 2023. DOI : 10.1109/ISCAS46773.2023.10181986.The Fano Noise Suppression Factor and the Gm/ID FoM
2023-01-01. 56th IEEE International Symposium on Circuits and Systems (ISCAS), Monterey, CA, May 21-25, 2023. DOI : 10.1109/ISCAS46773.2023.10182026.Design of Low-power Analog Circuits in Advanced Technology Nodes using the Gm/ID Approach
2023-01-01. 56th IEEE International Symposium on Circuits and Systems (ISCAS), Monterey, CA, May 21-25, 2023. DOI : 10.1109/ISCAS46773.2023.10181364.Ultra-Low Power Short-Range 60-GHz FMCW Radar Front-End
Lausanne, EPFL, 2023. DOI : 10.5075/epfl-thesis-9707.Optical Urea Sensing in Sweat for Kidney Healthcare by Sensitive and Selective Non-enhanced Raman Spectroscopy
2023-01-01. Conference on Optical Diagnostics and Sensing XXIII - Toward Point-of-Care Diagnostics, San Francisco, CA, Jan 30-31, 2023. p. 123870H. DOI : 10.1117/12.2653959.Third-harmonic generation monitoring of femtosecond-laser-induced in-volume functional modifications
Optica. 2023. DOI : 10.1364/OPTICA.486746.2022
All-optical switching in epsilon-near-zero asymmetric directional coupler
Scientific Reports. 2022-10-26. DOI : 10.1038/s41598-022-22573-7.Observation of SQUID-Like Behavior in Fiber Laser with Intra-Cavity Epsilon-Near-Zero Effect
Laser & Photonics Reviews. 2022-08-25. DOI : 10.1002/lpor.202200487.Back-gate effects on DC performance and carrier transport in 22 nm FDSOI technology down to cryogenic temperatures
Solid-State Electronics. 2022-07-01. DOI : 10.1016/j.sse.2022.108296.Ultrafast dynamic switching of optical response based on nonlinear hyperbolic metamaterial platform
Optics Express. 2022-06-06. DOI : 10.1364/OE.457875.Cryogenic InGaAs HEMT-Based Switches For Quantum Signal Routing
2022-01-01. International Electron Devices Meeting (IEDM), San Francisco, CA, Dec 03-07, 2022. DOI : 10.1109/IEDM45625.2022.10019536.Simple Expression of the Thermal Noise Excess Factor for LNA Design
2022-01-01. 29th IEEE International Conference on Electronics, Circuits and Systems (IEEE ICECS), Glasgow, SCOTLAND, Oct 24-26, 2022. DOI : 10.1109/ICECS202256217.2022.9970862.Cryogenic RF Characterization and Simple Modeling of a 22 nm FDSOI Technology
2022-01-01. 52nd IEEE European Solid-State Device Research Conference (ESSDERC), Milan, ITALY, Sep 19-22, 2022. p. 269-272. DOI : 10.1109/ESSDERC55479.2022.9947192.Rapid, Sensitive and Selective Optical Glucose Sensing with Stimulated Raman Scattering (SRS)
2022-01-01. 17th IEEE International Symposium on Medical Measurements and Applications (IEEE MeMeA), Messina, ITALY, Jun 22-24, 2022. DOI : 10.1109/MEMEA54994.2022.9856428.SEKV-E: Parameter Extractor of Simplified EKV I-V Model for Low-Power Analog Circuits
Ieee Open Journal Of Circuits And Systems. 2022-01-01. DOI : 10.1109/OJCAS.2022.3179046.Comprehensive Design-oriented FDSOI EKV Model
2022-01-01. 29th International Conference on Mixed Design of Integrated Circuits and System (MIXDES), Wroclaw, POLAND, Jun 23-24, 2022. p. 40-44. DOI : 10.23919/MIXDES55591.2022.9838014.Comparison of Two in Pixel Source Follower Schemes for Deep Subelectron Noise CMOS Image Sensors
Ieee Journal Of The Electron Devices Society. 2022-01-01. DOI : 10.1109/JEDS.2022.3200520.Increased Device Variability Induced by Total Ionizing Dose in 16-nm Bulk nFinFETs
Ieee Transactions On Nuclear Science. 2022-07-01. DOI : 10.1109/TNS.2022.3170937.Energy Efficient Sensing using Steep Slope Devices
Lausanne, EPFL, 2022. DOI : 10.5075/epfl-thesis-8122.SiGe Time Resolving Pixel Detectors for High Energy Physics and Medical Imaging
Lausanne, EPFL, 2022. DOI : 10.5075/epfl-thesis-9949.New Technologies to Enhance the Figures-of-Merit of GaN Power Devices
Lausanne, EPFL, 2022. DOI : 10.5075/epfl-thesis-9625.Influence of Fin and Finger Number on TID Degradation of 16-nm Bulk FinFETs Irradiated to Ultrahigh Doses
Ieee Transactions On Nuclear Science. 2022-03-01. DOI : 10.1109/TNS.2021.3125769.2021
Cryogenic Characterization of 16 nm FinFET Technology for Quantum Computing
2021-09-13. 47th European Solid State Circuits Conference (ESSCIRC 2021), Grenoble, France, Septembre 13-22, 2021. p. 71-74. DOI : 10.1109/ESSCIRC53450.2021.9567747.In-depth Cryogenic Characterization of 22 nm FDSOI Technology for Quantum Computation
2021-09-01. 7th Joint International EuroSOI Workshop and International Conference on Ultimate Integration on Silicon (EuroSOI-ULIS'2021), Caen, France, Septembre 1-3, 2021. p. 1-4. DOI : 10.1109/EuroSOI-ULIS53016.2021.9560181.Very Selective Detection of Low Physiopathological Glucose Levels by Spontaneous Raman Spectroscopy with Univariate Data Analysis
BioNanoScience. 2021-05-08. DOI : 10.1007/s12668-021-00867-w.Optimized Detection of Hypoglycemic Glucose Ranges in Human Serum by Raman Spectroscopy with 532 nm Laser Excitation
2021-01-01. 10th International Conference on Photonics, Optics and Laser Technology (PHOTOPTICS), ELECTR NETWORK, Feb 10-11, 2022. p. 158-165. DOI : 10.5220/0010981300003121.A 60 GHz QDCO with 11 GHz Seamless Tuning for Low-Power FMCW Radars in 22-nm FDSOI
2021-01-01. 47th IEEE European Solid State Circuits Conference (ESSCIRC), ELECTR NETWORK, Sep 06-09, 2021. p. 291-294. DOI : 10.1109/ESSCIRC53450.2021.9567787.An Optimized Low-Power Band-Tuning TX for Short-Range FMCW Radar in 22-nm FDSOI CMOS
2021-01-01. 47th IEEE European Solid State Circuits Conference (ESSCIRC), ELECTR NETWORK, Sep 06-09, 2021. p. 467-470. DOI : 10.1109/ESSCIRC53450.2021.9567815.Low-Power and Wide-Tuning Range Frequency Generation for FMCW Radars in Advanced CMOS Technologies
Lausanne, EPFL, 2021. DOI : 10.5075/epfl-thesis-7662.New Reliability Assessment of MEMS Components under Accumulative Testing for Space Applications
Lausanne, EPFL, 2021. DOI : 10.5075/epfl-thesis-8670.Nanowatt Acoustic Inference Sensing Exploiting Nonlinear Analog Feature Extraction
Ieee Journal Of Solid-State Circuits. 2021-10-01. DOI : 10.1109/JSSC.2021.3076344.TID Degradation Mechanisms in 16-nm Bulk FinFETs Irradiated to Ultrahigh Doses
Ieee Transactions On Nuclear Science. 2021-08-01. DOI : 10.1109/TNS.2021.3076977.Power-Optimized Digitally Controlled Oscillator in 28-nm CMOS for Low-Power FMCW Radars
Ieee Microwave And Wireless Components Letters. 2021-08-01. DOI : 10.1109/LMWC.2021.3092182.Generalized Boltzmann relations in semiconductors including band tails
Journal Of Applied Physics. 2021-01-28. DOI : 10.1063/5.0037432.Cryogenic MOSFET Modeling for Large-Scale Quantum Computing
Lausanne, EPFL, 2021. DOI : 10.5075/epfl-thesis-8365.Characterization and Modeling of Total Ionizing Dose Effects on Nanoscale MOSFETs for Particle Physics Experiments
Lausanne, EPFL, 2021. DOI : 10.5075/epfl-thesis-7549.Networks of Coupled VO2 Oscillators for Neuromorphic Computing
Lausanne, EPFL, 2021. DOI : 10.5075/epfl-thesis-9303.Cryogenic CMOS Integrated Circuits for Scalable Readout of Silicon Quantum Computers
Lausanne, EPFL, 2021. DOI : 10.5075/epfl-thesis-7984.Megapixel SPAD cameras for time-resolved applications
Lausanne, EPFL, 2021. DOI : 10.5075/epfl-thesis-8773.A Generalized EKV Charge-based MOSFET Model Including Oxide and Interface Traps
Solid-State Electronics. 2021-01-07. DOI : 10.1016/j.sse.2020.107951.A novel approach for SPICE modeling of light and radiation effects in ICs
Lausanne, EPFL, 2021. DOI : 10.5075/epfl-thesis-8422.Teaching & PhD
Past EPFL PhD Students
Mihaela Grigorie, Rafael Fried, Matthias Bucher, Manfred Punzenberger, Uroschanit Yodprasit, Nicola Scolari, Ananda Sankar Roy, Jérémie Chabloz, Matteo Contaldo, Aravind Prasad Heragu Singaiyengar, Viswanathan Balasubramanian, Anurag Mangla, Raghavasimhan Thirunarayanan, Maria-Anna Chalkiadaki, Assim Boukhayma, Vladimir Kopta, Huaiqi Huang, Jérémy Schlachter, Vincent Camus, Antonino Caizzone, Raffaele Capoccia, Chunmin Zhang, Francesco Chicco, Arnout Beckers, Sammy Cerida
Past EPFL PhD Students as codirector
Thierry Bernard Melly, Alain-Serge Porret, Dominique Python, Frédéric Zanella, Hung-Chi Han
Courses
Fundamentals of analog VLSI design
EE-424
This course presents the systematic design of low-power analog CMOS integrated circuits based on the concept of inversion coefficient and on the sEKV MOSFET model. It covers device modeling, basic building blocks to more advanced circuits like amplifiers and switched-capacitor circuits.