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EPFL > STI > IEM > MSIC-LAB
Web site: Web site: https://www.epfl.ch/labs/msic-lab
Fields of expertise
Links Integrated Circuits LaboratoryAACD 2015 - Advances in Analog Circuit Design"Charge-Based MOS Transistor Modeling - The EKV Model for Low-Power and RF IC Design", Wiley, 2006Citations Google Scholar
|Director||Institute of Microengineering (IMT)|
|Head of Laboratory||Integrated Circuits Laboratory (ICLAB)|
|Full Professor||School of Engineering (STI)|
Research InterestsChristian C. Enz is the head of the Integrated Circuits Laboratory (ICLAB), operating in Microcity, the new EPFL antenna in Neuchâtel. He is directed towards low-power and low-voltage electronics and his research covers the following areas:
BiographyChristian C. Enz (M84, S'12) received the M.S. and Ph.D. degrees in Electrical Engineering from the EPFL in 1984 and 1989 respectively. From 1984 to 1989 he was research assistant at the EPFL, working in the field of micro-power analog IC design. In 1989 he was one of the founders of Smart Silicon Systems S.A. (S3), where he developed several low-noise and low-power ICs, mainly for high energy physics applications. From 1992 to 1997, he was an Assistant Professor at EPFL, working in the field of low-power analog CMOS and BiCMOS IC design and device modeling. From 1997 to 1999, he was Principal Senior Engineer at Conexant (formerly Rockwell Semiconductor Systems), Newport Beach, CA, where he was responsible for the modeling and characterization of MOS transistors for the design of RF CMOS circuits. In 1999, he joined the Swiss Center for Electronics and Microtechnology (CSEM) where he launched and lead the RF and Analog IC Design group. In 2000, he was promoted Vice President, heading the Microelectronics Department, which became the Integrated and Wireless Systems Division in 2009. He joined the EPFL as full professor in 2013, where he is currently the director of the Institute of Microengineering (IMT) and head of the Integrated Circuits Laboratory (ICLAB). He is lecturing and supervising undergraduate and graduate students in the field of Analog and RF IC Design at EPFL. His technical interests and expertise are in the field of very low-power analog and RF IC design, semiconductor device modeling, and inexact and error tolerant circuits and systems. He has published more than 200 scientific papers and has contributed to numerous conference presentations and advanced engineering courses. Together with E. Vittoz and F. Krummenacher he is one of the developer of the EKV MOS transistor model and the author of the book "Charge-Based MOS Transistor Modeling - The EKV Model for Low-Power and RF IC Design" (Wiley, 2006). He has been member of several technical program committees, including the International Solid-State Circuits Conference (ISSCC) and European Solid-State Circuits Conference (ESSCIRC). He has served as a vice-chair for the 2000 International Symposium on Low Power Electronics and Design (ISLPED), exhibit chair for the 2000 International Symposium on Circuits and Systems (ISCAS) and chair of the technical program committee for the 2006 European Solid-State Circuits Conference (ESSCIRC). Since 2012 he has been elected as member of the IEEE Solid-State Circuits Society (SSCS) Administrative Commmittee (AdCom). He is also Chair of the IEEE SSCS Chapter of Switzerland.
All-optical switching in epsilon-near-zero asymmetric directional couplerScientific Reports. 2022-10-26. DOI : 10.1038/s41598-022-22573-7.
Observation of SQUID-Like Behavior in Fiber Laser with Intra-Cavity Epsilon-Near-Zero EffectLaser & Photonics Reviews. 2022-08-25. DOI : 10.1002/lpor.202200487.
Increased Device Variability Induced by Total Ionizing Dose in 16-nm Bulk nFinFETsIeee Transactions On Nuclear Science. 2022-07-01. DOI : 10.1109/TNS.2022.3170937.
Back-gate effects on DC performance and carrier transport in 22 nm FDSOI technology down to cryogenic temperaturesSolid-State Electronics. 2022-07-01. DOI : 10.1016/j.sse.2022.108296.
Ultrafast dynamic switching of optical response based on nonlinear hyperbolic metamaterial platformOptics Express. 2022-06-06. DOI : 10.1364/OE.457875.
Influence of Fin and Finger Number on TID Degradation of 16-nm Bulk FinFETs Irradiated to Ultrahigh DosesIeee Transactions On Nuclear Science. 2022-03-01. DOI : 10.1109/TNS.2021.3125769.
Simple Expression of the Thermal Noise Excess Factor for LNA Design2022-01-01. 29th IEEE International Conference on Electronics, Circuits and Systems (IEEE ICECS), Glasgow, SCOTLAND, Oct 24-26, 2022. DOI : 10.1109/ICECS202256217.2022.9970862.
Cryogenic RF Characterization and Simple Modeling of a 22 nm FDSOI Technology2022-01-01. 52nd IEEE European Solid-State Device Research Conference (ESSDERC), Milan, ITALY, Sep 19-22, 2022. p. 269-272. DOI : 10.1109/ESSDERC55479.2022.9947192.
Rapid, Sensitive and Selective Optical Glucose Sensing with Stimulated Raman Scattering (SRS)2022-01-01. 17th IEEE International Symposium on Medical Measurements and Applications (IEEE MeMeA), Messina, ITALY, Jun 22-24, 2022. DOI : 10.1109/MEMEA54994.2022.9856428.
SEKV-E: Parameter Extractor of Simplified EKV I-V Model for Low-Power Analog CircuitsIeee Open Journal Of Circuits And Systems. 2022-01-01. DOI : 10.1109/OJCAS.2022.3179046.
Comprehensive Design-oriented FDSOI EKV Model2022-01-01. 29th International Conference on Mixed Design of Integrated Circuits and System (MIXDES), Wroclaw, POLAND, Jun 23-24, 2022. p. 40-44. DOI : 10.23919/MIXDES55591.2022.9838014.
Comparison of Two in Pixel Source Follower Schemes for Deep Subelectron Noise CMOS Image SensorsIeee Journal Of The Electron Devices Society. 2022-01-01. DOI : 10.1109/JEDS.2022.3200520.
Energy Efficient Sensing using Steep Slope DevicesLausanne, EPFL, 2022. DOI : 10.5075/epfl-thesis-8122.
SiGe Time Resolving Pixel Detectors for High Energy Physics and Medical ImagingLausanne, EPFL, 2022. DOI : 10.5075/epfl-thesis-9949.
New Technologies to Enhance the Figures-of-Merit of GaN Power DevicesLausanne, EPFL, 2022. DOI : 10.5075/epfl-thesis-9625.
Nanowatt Acoustic Inference Sensing Exploiting Nonlinear Analog Feature ExtractionIeee Journal Of Solid-State Circuits. 2021-10-01. DOI : 10.1109/JSSC.2021.3076344.
Cryogenic Characterization of 16 nm FinFET Technology for Quantum Computing2021-09-13. 47th European Solid State Circuits Conference (ESSCIRC 2021), Grenoble, France, Septembre 13-22, 2021. p. 71-74. DOI : 10.1109/ESSCIRC53450.2021.9567747.
In-depth Cryogenic Characterization of 22 nm FDSOI Technology for Quantum Computation2021-09-01. 7th Joint International EuroSOI Workshop and International Conference on Ultimate Integration on Silicon (EuroSOI-ULIS'2021), Caen, France, Septembre 1-3, 2021. p. 1-4. DOI : 10.1109/EuroSOI-ULIS53016.2021.9560181.
TID Degradation Mechanisms in 16-nm Bulk FinFETs Irradiated to Ultrahigh DosesIeee Transactions On Nuclear Science. 2021-08-01. DOI : 10.1109/TNS.2021.3076977.
Power-Optimized Digitally Controlled Oscillator in 28-nm CMOS for Low-Power FMCW RadarsIeee Microwave And Wireless Components Letters. 2021-08-01. DOI : 10.1109/LMWC.2021.3092182.
Very Selective Detection of Low Physiopathological Glucose Levels by Spontaneous Raman Spectroscopy with Univariate Data AnalysisBioNanoScience. 2021-05-08. DOI : 10.1007/s12668-021-00867-w.
Generalized Boltzmann relations in semiconductors including band tailsJournal Of Applied Physics. 2021-01-28. DOI : 10.1063/5.0037432.
A Generalized EKV Charge-based MOSFET Model Including Oxide and Interface TrapsSolid-State Electronics. 2021-01-07. DOI : 10.1016/j.sse.2020.107951.
Optimized Detection of Hypoglycemic Glucose Ranges in Human Serum by Raman Spectroscopy with 532 nm Laser Excitation2021-01-01. 10th International Conference on Photonics, Optics and Laser Technology (PHOTOPTICS), ELECTR NETWORK, Feb 10-11, 2022. p. 158-165. DOI : 10.5220/0010981300003121.
A 60 GHz QDCO with 11 GHz Seamless Tuning for Low-Power FMCW Radars in 22-nm FDSOI2021-01-01. 47th IEEE European Solid State Circuits Conference (ESSCIRC), ELECTR NETWORK, Sep 06-09, 2021. p. 291-294. DOI : 10.1109/ESSCIRC53450.2021.9567787.
An Optimized Low-Power Band-Tuning TX for Short-Range FMCW Radar in 22-nm FDSOI CMOS2021-01-01. 47th IEEE European Solid State Circuits Conference (ESSCIRC), ELECTR NETWORK, Sep 06-09, 2021. p. 467-470. DOI : 10.1109/ESSCIRC53450.2021.9567815.
Low-Power and Wide-Tuning Range Frequency Generation for FMCW Radars in Advanced CMOS TechnologiesLausanne, EPFL, 2021. DOI : 10.5075/epfl-thesis-7662.
New Reliability Assessment of MEMS Components under Accumulative Testing for Space ApplicationsLausanne, EPFL, 2021. DOI : 10.5075/epfl-thesis-8670.
Cryogenic MOSFET Modeling for Large-Scale Quantum ComputingLausanne, EPFL, 2021. DOI : 10.5075/epfl-thesis-8365.
Characterization and Modeling of Total Ionizing Dose Effects on Nanoscale MOSFETs for Particle Physics ExperimentsLausanne, EPFL, 2021. DOI : 10.5075/epfl-thesis-7549.
Networks of Coupled VO2 Oscillators for Neuromorphic ComputingLausanne, EPFL, 2021. DOI : 10.5075/epfl-thesis-9303.
Cryogenic CMOS Integrated Circuits for Scalable Readout of Silicon Quantum ComputersLausanne, EPFL, 2021. DOI : 10.5075/epfl-thesis-7984.
Megapixel SPAD cameras for time-resolved applicationsLausanne, EPFL, 2021. DOI : 10.5075/epfl-thesis-8773.
A novel approach for SPICE modeling of light and radiation effects in ICsLausanne, EPFL, 2021. DOI : 10.5075/epfl-thesis-8422.
Microfluidics by Additive Manufacturing for Wearable Biosensors: A ReviewSensors. 2020-07-29. DOI : 10.3390/s20154236.
Ionizing-Radiation Response and Low-Frequency Noise of 28-nm MOSFETs at Ultrahigh DosesIeee Transactions On Nuclear Science. 2020-07-01. DOI : 10.1109/TNS.2020.2981881.
A CMOS Image Sensor Pixel Combining Deep Sub-Electron Noise With Wide Dynamic RangeIeee Electron Device Letters. 2020-06-01. DOI : 10.1109/LED.2020.2988378.
Inflection Phenomenon in Cryogenic MOSFET BehaviorIeee Transactions On Electron Devices. 2020-03-01. DOI : 10.1109/TED.2020.2965475.
Cryo-CMOS Compact Modeling2020-01-01. IEEE International Electron Devices Meeting (IEDM), ELECTR NETWORK, Dec 12-18, 2020. DOI : 10.1109/IEDM13553.2020.9371894.
A 49 mu W 6th-Order Chebyshev SSF-based Low-Pass Analog Filter for IEEE 802.11ax2020-01-01. IEEE International Symposium on Circuits and Systems (ISCAS), ELECTR NETWORK, Oct 10-21, 2020. DOI : 10.1109/ISCAS45731.2020.9180460.
Design and Optimization of Low Power and Low Light Sensor2020-01-01. IEEE Custom Integrated Circuits Conference (CICC), Boston, MA, Mar 22-25, 2020. DOI : 10.1109/CICC48029.2020.9075874.
Modeling for Ultra Low Noise CMOS Image SensorsLausanne, EPFL, 2020. DOI : 10.5075/epfl-thesis-7661.
Physical Model of Low-Temperature to Cryogenic Threshold Voltage in MOSFETsIeee Journal Of The Electron Devices Society. 2020-01-01. DOI : 10.1109/JEDS.2020.2989629.
Time-of-flight device and 3d optical detectorJP2022522952 ; US2022120873 ; EP3911972 ; KR20210127153 ; WO2020148570 . 2020.
An Ultra Low-Noise Micropower PPG SensorLausanne, EPFL, 2020. DOI : 10.5075/epfl-thesis-7946.
High-Performance III-V MOSFETs and Tunnel-FETs Integrated on SiliconLausanne, EPFL, 2020. DOI : 10.5075/epfl-thesis-8346.
Experimental Verification of the Impact of Analog CMS on CIS Readout NoiseIEEE Transactions on Circuits and Systems I: Regular Papers. 2020. DOI : 10.1109/TCSI.2019.2951663.
Theoretical Limit of Low Temperature Subthreshold Swing in Field-Effect TransistorsIEEE Electron Device Letters. 2020. DOI : 10.1109/LED.2019.2963379.
Cryogenic MOSFET Threshold Voltage Model2019-11-18. 49th IEEE European Solid-State Device Research Conference - ESSDERC 2019), Cracow, Poland, 23-26 September, 2019. p. 94-97. DOI : 10.1109/ESSDERC.2019.8901806.
AC/DC Ratio Enhancement in Photoplethysmography Using a Pinned PhotodiodeIeee Electron Device Letters. 2019-11-01. DOI : 10.1109/LED.2019.2940063.
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