Francis Lévy
Education
Docteur ès sciences naturelles
Physique du solide: magnétisme, structures cristallines, composés des terres rares
ETHZ
1969
Physique et mathématique
Physique du solide
ETHZ
1963
Publications
Selected publications
| Francis L�vy Th�se ETHZ N� 4337, 1969 |
Effets magn�tostrictifs spontan�s de quelques compos�s des terres rares: I Les chalcog�nures d'Europium; II Les combinaisons LnX |
| Le Chi Thanh,C. Depeursinge, F. L�vy, E. Mooser J. Phys. Chem. Solids 30, 699, 1975 |
The Band Gap Exciton In PbI2 |
| H. Kamimura, A.J. Grant F. L�vy A.D. Yoffe, G.D. Pitt Solid State Communications 17, 49, 1975 |
The band structure and electronic properties of sulfur nitride polymer |
| A.M. Goldberg, A.R. Beal, F. L�vy, E.A. Davis Phil. Mag. 32, 367, 1975 |
The low energy absorption edge in 2H-MoS2 and 2H-MoSe2 |
| F. L�vy, Ph. Schmid, H. Berger Phil. Mag. 34, 1129, 1976 |
Electrical propertiesof layered MoSe2 single crystals doped with Nb and Re |
| F. L�vy J. Phys. C: Solid State Physics 13, 2901, 1980 |
The influence of impurities on the electrical properties of TiSe2 single crystals |
| F. L�vy, H. Berger J. cryst.growth 61, 61, 1983 |
Single crystals of transition metals trichalcogenides |
| R.R. Daniels, G. Margaritondo, C.A. Georg, F. L�vy Phys. Rev. B29, 181�3, 1984 |
Electronic states of rutile dioxide RuO2, IrO2 and Ru(x)Ir(1-x)O2 |
| R. Bichsel, F. L�vy Thin Solid Films, 124, 75, 1985 |
Electrical properties of MoSe2 films prepared by r.f. magnetron sputering |
| H.P. Vaterlaus, F. L�vy J. Phys. C: Solid State Physics, 18, 2351, 1985 |
Phonons and free carriers in group IVB transition metal dichalcogenides |
| P. Triggs, F. L�vy Phys. Status Solidi(b) 129, 363, 1985 |
Optical and electrical properties of ruthenium doped TiO2 |
| M. Sch�rli, F. L�vy Phys. Rev. B33,4317, 1986 |
Interlayer acoustic phonons in zhe layered compound TiS2 |
| D.R.P. Guy, R.H. Friend, F. L�vy Physica 139*140B, 443, 1986 |
High pressure transport studies in transition metal dichalcogenide alloys |
| R. Bichsel, F. L�vy J. Phys. D: Appl. Physics 19, 1809, 1986 |
Influence of process conditions on the electrical and optical properties of R.F. magnetron sputtered MoS2 films |
| R. Luthier, F. L�vy J. Vac. Sci, Technol. A6, 3082, 1988 |
Ellipsometric studies of sputtered Au-TiNx thin films |
| K. Biljacovic, J.C. Lasjaunias, P. Monceau, F. L�vy Phys. Rev. Lett. 62, 1512, 1989 |
Aging effects in nonexpnential energy relaxations in charge-density-wave systems |
| R. Luthier,F. L�vy J, Vac, Sci. Technol. A9 102,109, 1991 |
Magnetron sputtered TialON compopsite thin films:I Structure and morphology, II Optical and electrical properties |
| J. Krempasky, L. Wang, M. Proctor, A. Pignolet, F. L�vy Sol. State. Commun. 78, 1039, 1991 |
Optical properties of PZT and PMZT souttered thin films |
| J. Moser, F. L�vy Thin Solid Films 228, 257, 1993 |
MoS(2-x) lubricating films: structure and wear mechanisms investigated by cross-sectional transmission electron microscopy |
| S. Kurita, M. Tanaka, F. L�vy Phys. Rev. B48, 1356, 1993 |
Optical spectra near the band edge of ZrS3 and ZrSe3 |
| J. Moser, F. L�vy Thin Solid Films 240 56, 1994 |
Random stacking in MoS(2-x) sputtered thin films |
| L. Forro, O. Chauvet, S. Emin, L. Zuppiroli, H. Berger, F. L�vy J. Appl. Phys. 75, 633, 1993 |
High mobility n-type charge carriers in large single crystals of anatase (TiO2) |
| G. Rosenfeld, R. Sanjin�s, F. L�vy, P.A. Buffat, V. Demarne, A. Grisel J. Vac. Sci. Rechnol. A12, 135 1994 |
Structural and morphological characterization of Nb2O5 thin films deposited by reactive sputtering |
| H. Tang, K. Prasad, R. Sanjin�s, P.E. Schmid, F. L�vy J. Appl.Phys. 75, 2042, 1994 |
Electrical and optical properties of TiO2 anatase thin films |
| F. L�vy Trait� des Mat�riaux, 18 Presse polytechniques et universitaires, Lausanne, 1995 |
Physique et technologie des semicomducteurs |
| C. Wiemer, F. L�vy, R. Messier J. Phys. D: Appl. Phys. 29, 99, 1996 |
Effect of ion collisions on Langmuir probe measurements in Ti-N deposition by unbalanced magnetron sputtering |
| W.T. Wu, P.E. Schmid, F. L�vy Apl. Surf. Sci. 92, 391, 1996 |
Structural and optical properties of Pd(1-x)Inx thin films |
| M. Regula, C. Ballif, M. Remskar, F. L�vy J. Vac. Sci. Technol. A15, 2323 1997 |
Crystallinity and texture promotion in WS2 thin films |
| C.H. Hohli, P.E. Schmid, F. L�vy Ferroelectrics 209, 471, 1998 |
Electrical and pyroelectric properties of lithium tantalate thin films |
| A. Bally, P, Hones, R. Sanjin�s, P.E. Schmid, F. L�vy Surf.Coat. Technol. 108-109, 166, 1998 |
Mechanical and electrical properties of fcc TiO(1 x) thin films prepared by r.f. reactive sputtering |
| P. Hones, R. Sanjin�s, F. L�vy, O. Shojaei J. Vac. Sci. Technol. A17, 1024, 1999 |
Electronic structure and mechanical properties of resistant coatings: the chromium molybdenum nitride system |
| F. L�vy, P. Hones, P.E. Schmid, R. Sanjin�s, M. Diserens, C. Wiemer Surf. Coat. Technol. 120-121, 284, 1999 |
Electronic states and mechanical properties in transitiion metal nitrides |
| P. Hones, F. L�vy, T. Gerfin, M. Gr�tzel Chem Vap. Deposition, 6, 193, 2000 |
MOCVD of thin ruzhenium oxide films: propertien and growth kinetics |
| M. Remskar, Z. Skraba, P. Stadelmann, F. L�vy Adv. Mater. 12, 814, 2000 |
Structural stabilization of new compounds: MoS2 and WS2 micro- and nanotubes and nanotubes alloyed with gold and silver |
| N. Martin, O. Banakh, A.M.E. Santo, S. Springer, R. Sanjin�s, I. Takadoum, F. L�vy Appl. Surf. Sci. 185, 123, 2001 |
Correlation between processing and properties of TiOxNy thin films sputter deposited by reactive gas pulsing techniques |
| E. Riedo, F. L�vy, H. Brune Phys. Rev. Lett. 88, 185505, 2002 |
Kinetics of capillary condensationin nanoscopic sliding friction |
| P. Hones, N. Martin, M. Regula, F. L�vy J. Phys. D: Appl. Phys. 36, 1023, 2003 |
Structural and mechanical properties of chromium nitride, molybdenum nitride and tungsten nitride |
| E. Marinez, R. Sanjin�s, O. Banakh, F. L�vy Thin Solid Films 447-448, 332, 2004 |
Electrical, optical and mechanical properties of sputtered CrNy and Cr(1-x)SixN1.02 |
| R. Lamni, E. Martinez, S.G. Springer, R. Sanjin�s, P.E. Schmid, F. L�vy Thin Solid Films 447-448, 316 2004 |
Optical and electrical properties of magnetron sputtrered ZrNx thin films |
| R. Lamni, R. Sanjin�s, F. L�vy Thin Solid Films 478, 170, 2005 |
Electrical and optical properties of Zr(1-x)AlxN thin films |
| R. Sanjin�s, M. Benkahoul, M. Papagno, , F. L�vy, D. Music J. Appl. Phys. 99, 044911, 2006 |
Electronic structure of Nb2N and NbN thin films |
| R. Sanjin�s, M. Benkahoul, S.S. Sandu, P.E. Schmid, F. L�vy J. Appl. Phys. 98, 123511, 2005 |
Relationship between the physical and structural properties of NbzSiyNx thin films deposited by reactive magnetron sputtering |
| C.S. Sandu, M. Benkahoul, R. Sanjin�s, F. L�vy Surf. Coat. Technol. 201, 2897, 2006 |
Model for the evolution of Nb-Si-N thin films as a function of Si content relating the nanostructure to elctrical and mechanical properties |
| F. L�vy Encyclopedia of condensed Matter Physics, p.210, Elsevier 2005 |
Film Growth and Epitaxy: Methods |