Jean-Michel Sallese

* Design-Oriented Analytical Model for Nanowire Biosensors Including Dynamic Aspects

A. Yesayan; A. Grabski; F. Jazaeri; J.-M. Sallese

DOI : 10.1109/TED.2025.3526113

* Cover Picture: Materials and Corrosion. 1/2025

P. V. Kulkarni; M. J. Oza; A. Igual‐Munoz; J. Sallese; M. Shahverdi  et al.

DOI : 10.1002/maco.202570011

* Corrosion Behavior of Heat-Treated Fe-Based Shape Memory Alloys

P. V. Kulkarni; M. J. Oza; A. Igual-Munoz; J. M. Sallese; M. Shahverdi  et al.

DOI : 10.1002/maco.202414562

* Nanowire junctionless ISFET noise model in Verilog-A

N. Yezakyan; A. Yesayan; J. M. Sallese

DOI : 10.1080/21681724.2024.2437361

* Radiation response of 28 nm CMOS transistors at high proton and neutron fluences for high energy physics applications

G. Termo; G. Borghello; F. Faccio; S. Michelis; A. Koukab  et al.

DOI : 10.1016/j.nima.2024.169497

* Characteristics and ultra-high total ionizing dose response of 22nm fully depleted silicon-on-insulator

G. Termo; G. Borghello; F. Faccio; K. Kloukina; M. Caselle  et al.

DOI : 10.1088/1748-0221/19/03/C03039

* Few-shot Learning for Efficient and Effective Machine Learning Model Adaptation

A. J. J. Devos / J.-M. Sallese (Dir.)

* Simplified EPFL HEMT Model

F. Jazaeri; M. Shalchian; A. Yesayan; A. Rassekh; A. Mangla  et al.

* Reliability of Advanced Nanoscale CMOS Technology for High-Radiation Environments

G. Termo / J.-M. Sallese; A. Koukab (Dir.)

* Detachable and Portable Moisture Sensors for Industrial Applications

D. Barrettino; J. M. Sallese

* Non Quasi-Static Model of DG Junctionless FETs

M. Bavir; A. Abbasi; A. A. Orouji; F. Jazaeri; J. M. Sallese

DOI : 10.1109/JEDS.2024.3483299

* Design space of quantum dot spin qubits

A. Rassekh; M. Shalchian; J.-M. Sallese; F. Jazaeri

DOI : 10.1016/j.physb.2023.415133

* Fab-to-fab and run-to-run variability in 130 nm and 65 nm CMOS technologies exposed to ultra-high TID

G. Termo; G. Borghello; F. Faccio; S. Michelis; A. Koukab  et al.

DOI : 10.1088/1748-0221/18/01/C01061

* Low-Cost Portable Medical Device for the Detection and Quantification of Exosomes

D. Barrettino; C. Zumbuhl; R. Kummer; M. Thalmann; C. Balbi  et al.

* Time-resolved multi-gate ion sensitive field effect transducer and system and method of operating the same

A. Koukab; J.-M. Sallese

* The Timepix4 analog front-end design: Lessons learnt on fundamental limits to noise and time resolution in highly segmented hybrid pixel detectors

R. Ballabriga; J. A. Alozy; F. N. Bandi; G. Blaj; M. Campbell  et al.

DOI : 10.1016/j.nima.2022.167489

* Neutron- and Proton-Induced Degradation of MOS Transistors in 28 nm CMOS Technology (September 2023)

G. Termo; G. Borghello; F. Faccio; S. Michelis; A. Koukab  et al.

* Analytic modelling of passive microfluidic mixers

A. Bonament; A. Prel; J.-M. Sallese; C. Lallement; M. Madec

DOI : 10.3934/mbe.2022179

* Nonhysteretic Condition in Negative Capacitance Junctionless FETs

A. Rassekh; F. Jazaeri; J.-M. Sallese

DOI : 10.1109/TED.2021.3133193

* Accounting for Optical Generation in the Quasi-Neutral Regions of Perovskite Solar Cells

P. FERDOWSI; F. JAZAERI; E. OCHOA-MARTINEZ; J. MILIC; M. SALIBA  et al.

DOI : 10.1109/JEDS.2022.3184397

* Tunneling Current Through a Double Quantum Dots System

A. Rassekh; M. Shalchian; J.-M. Sallese; F. Jazaeri

DOI : 10.1109/ACCESS.2022.3190617

* Medipix4, a high granularity four sides buttable pixel readout chip for high resolution spectroscopic X-ray imaging at rates compatible with medical CT scans

V. Sriskaran / J.-M. Sallese; A. Koukab (Dir.)

* Design Space of Negative Capacitance in FETs

A. Rassekh; F. Jazaeri; J.-M. Sallese

DOI : 10.1109/TNANO.2022.3174471

* Theoretical Studies of Nanowire Ion-Sensitive Field Effect Transistor

A. Yesayan; S. Petrosyan; A. Papiyan; Sallese

DOI : 10.3103/S1068337221040071

* Compact Analytical Model of Nanowire Junctionless ISFET

A. Yesayan; J.-M. Sallese

* Charge-based modeling of field effect transistors, Make it easy

J.-M. Sallese

* A novel approach for SPICE modeling of light and radiation effects in ICs

C. Rossi / J.-M. Sallese (Dir.)

* Free Carrier Mobility, Series Resistance, and Threshold Voltage Extraction in Junction FETs

N. Makris; M. Bucher; L. Chevas; F. Jazaeri; J.-M. Sallese

DOI : 10.1109/TED.2020.3025841

* New architecture for the analog front-end of Medipix4

V. Sriskaran; J. Alozy; R. Ballabriga; M. Campbell; N. Egidos  et al.

DOI : 10.1016/j.nima.2020.164412

* High Precision Capacitive Moisture Sensor for Polymers: Modeling and Experiments

R. M. Dos Santos; J.-M. Sallese; M. Mattavelli; A. S. Nunes; C. Dehollain  et al.

DOI : 10.1109/JSEN.2019.2957108

* Analytical Modeling of Double-Gate and Nanowire Junctionless ISFETs

A. Yesayan; F. Jazaeri; J.-M. Sallese

DOI : 10.1109/TED.2020.2965167

* Transcapacitances in EPFL HEMT Model

F. Jazaeri; M. Shalchian; J.-M. Sallese

DOI : 10.1109/TED.2019.2958180

* A New Concept of Sensor for Ultra-high Levels of Radiation based on Radiation Enhanced Oxidation of Copper Thin-films

G. Gorine / J.-M. Sallese; F. Ravotti (Dir.)

* Simulation of CMOS APS Operation and Crosstalk in SPICE With Generalized Devices

C. Rossi; J.-M. Sallese

DOI : 10.1109/JEDS.2019.2956572

* Negative Capacitance Double-Gate Junctionless FETs: A Charge-Based Modeling Investigation of Swing, Overdrive and Short Channel Effect

A. Rassekh; J.-M. Sallese; F. Jazaeri; M. Fathipour; A. M. Ionescu

DOI : 10.1109/JEDS.2020.3020976

* Prediction of optically-triggered amplification in phototransistor with SPICE circuit simulators

C. Rossi; J.-M. Sallese

* A BEAM PROFILE MONITOR FOR HIGH ENERGY PROTON BEAMS USING MICROFABRICATION TECHNIQUES

W. Farabolini; A. Gilardi; B. Gkotse; A. Mapelli; I. Mateu  et al.

* Compact Model for Continuous Microfluidic Mixer

A. Bonament; A. Prel; J.-M. Sallese; M. Madec; C. Lallement

* Modeling Interface Charge Traps in Junctionless FETs, Including Temperature Effects

A. Rassekh; F. Jazaeri; M. Fathipour; J.-M. Sallese

DOI : 10.1109/TED.2019.2944193

* Radiation enhanced oxidation of proton-irradiated copper thin-films: Towards a new concept of ultra-high radiation dosimetry

G. Gorine; G. Pezzullo; D. Bouvet; F. Ravotti; J.-M. Sallese

DOI : 10.1063/1.5096606

* FCC-hh: The Hadron Collider: Future Circular Collider Conceptual Design Report Volume 3

A. Abada; M. Abbrescia; S. S. AbdusSalam; I. Abdyukhanov; J. Abelleira Fernandez  et al.

DOI : 10.1140/epjst/e2019-900087-0

* HE-LHC: The High-Energy Large Hadron Collider Future Circular Collider Conceptual Design Report Volume 4

A. Abada; M. Abbrescia; S. S. AbdusSalam; I. Abdyukhanov; J. Abelleira Fernandez  et al.

DOI : 10.1140/epjst/e2019-900088-6

* FCC Physics Opportunities: Future Circular Collider Conceptual Design Report Volume 1

A. Abada; M. Abbrescia; S. S. AbdusSalam; I. Abdyukhanov; J. A. Fernandez  et al.

DOI : 10.1140/epjc/s10052-019-6904-3

* Charge-Based EPFL HEMT Model

F. Jazaeri; J.-M. Sallese

DOI : 10.1109/TED.2019.2893302

* Transient current technique for charged traps detection in silicon bonded interfaces

J. Bronuzzi; D. Bouvet; C. Charrier; F. Fournel; M. F. Garcia  et al.

DOI : 10.1063/1.5079999

* Full SPICE Simulation of a CMOS Active Pixel Sensor with Generalized Devices

C. Rossi; J.-M. Sallese

* Modeling Dielectric Constant Variability in Aggregate Polymers from CV Measurements

R. M. Dos Santos; C. Dehollain; M. Mattavelli; D. Barrettino; J.-M. Sallese

* Transadmittance Efficiency under NQS Operation in Asymmetric Double Gate FDSOI MOSFET

S. El Ghouli; J.-M. Sallese; A. Juge; P. Scheer; C. Lallement

DOI : 10.1109/TED.2018.2882539

* CJM: A Compact Model for Double-Gate Junction FETs

N. Makris; M. Bucher; F. Jazaeri; J.-M. Sallese

DOI : 10.1109/JEDS.2019.2944817

* A Review on Quantum Computing: From Qubits to Front-end Electronics and Cryogenic MOSFET Physics

F. Jazaeri; A. Beckers; A. Tajalli; J.-M. Sallese