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V. Sriskaran; J. Alozy; R. Ballabriga; M. Campbell; N. Egidos  et al.

DOI : 10.1016/j.nima.2020.164412

* High Precision Capacitive Moisture Sensor for Polymers: Modeling and Experiments

R. M. Dos Santos; J.-M. Sallese; M. Mattavelli; A. S. Nunes; C. Dehollain  et al.

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* Analytical Modeling of Double-Gate and Nanowire Junctionless ISFETs

A. Yesayan; F. Jazaeri; J.-M. Sallese

DOI : 10.1109/TED.2020.2965167

* Transcapacitances in EPFL HEMT Model

F. Jazaeri; M. Shalchian; J.-M. Sallese

DOI : 10.1109/TED.2019.2958180

* Modeling for Ultra Low Noise CMOS Image Sensors

R. Capoccia / C. Enz (Dir.)

* InAs-on-Insulator Fin Nanostructures for Integrated Computation and Sensing Functions

M. Rupakula / M. A. Ionescu (Dir.)

* Enhanced-performance integrated Resonant Switched-Capacitor and Buck DC-DC converters for application in extreme radiation and magnetic field environments

G. Ripamonti / M. Kayal; A. Koukab (Dir.)

* Simulation of CMOS APS Operation and Crosstalk in SPICE With Generalized Devices

C. Rossi; J.-M. Sallese

DOI : 10.1109/JEDS.2019.2956572

* A New Concept of Sensor for Ultra-high Levels of Radiation based on Radiation Enhanced Oxidation of Copper Thin-films

G. Gorine / J.-M. Sallese; F. Ravotti (Dir.)

* Sweat monitoring with CMOS compatible technology: ISFETS and beyond

F. Bellando / M. A. Ionescu (Dir.)

* On Smart-Buildings and their Integration into the Smart-Grid

O. V. H. Van Cutsem / M. Kayal (Dir.)

* Modeling Interface Charge Traps in Junctionless FETs, Including Temperature Effects

A. Rassekh; F. Jazaeri; M. Fathipour; J.-M. Sallese

DOI : 10.1109/TED.2019.2944193

* Radiation enhanced oxidation of proton-irradiated copper thin-films: Towards a new concept of ultra-high radiation dosimetry

G. Gorine; G. Pezzullo; D. Bouvet; F. Ravotti; J.-M. Sallese

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* FCC-hh: The Hadron Collider: Future Circular Collider Conceptual Design Report Volume 3

A. Abada; M. Abbrescia; S. S. AbdusSalam; I. Abdyukhanov; J. Abelleira Fernandez  et al.

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A. Abada; M. Abbrescia; S. S. AbdusSalam; I. Abdyukhanov; J. Abelleira Fernandez  et al.

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A. Abada; M. Abbrescia; S. S. AbdusSalam; I. Abdyukhanov; J. A. Fernandez  et al.

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* Charge-Based EPFL HEMT Model

F. Jazaeri; J.-M. Sallese

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J. Bronuzzi; D. Bouvet; C. Charrier; F. Fournel; M. F. Garcia  et al.

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* A Review on Quantum Computing: From Qubits to Front-end Electronics and Cryogenic MOSFET Physics

F. Jazaeri; A. Beckers; A. Tajalli; J.-M. Sallese

* FOSS EKV2.6 Verilog-A Compact MOSFET Model

W. Grabinski; M. Pavanello; M. de Souza; D. Tomaszewski; J. Malesinska  et al.

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N. Makris; M. Bucher; F. Jazaeri; J.-M. Sallese

DOI : 10.1109/JEDS.2019.2944817

* High Speed SAR ADC Architectures in 28nm FDSOI CMOS

M. Kilic / Y. Leblebici (Dir.)

* Optical microsystems for genetically engineered biosensors. Case study: Glucose monitoring

B. J. Vinchhi / C. Dehollain; U. De Marchi (Dir.)

* Integration of microfluidics and multimodal optics for translational bioanalytics

D. Migliozzi / M. Gijs (Dir.)

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A. Caratelli / Y. Leblebici; K. Kloukinas (Dir.)

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J. Zhang / M. A. Ionescu; M. Mazza (Dir.)

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C. Rossi; J.-M. Sallese

* Modeling Dielectric Constant Variability in Aggregate Polymers from CV Measurements

R. M. Dos Santos; C. Dehollain; M. Mattavelli; D. Barrettino; J.-M. Sallese

* Analysis of photosensor frontends for biomedical applications: a focus on noise

P. S. Gosselin / M. Kayal; A. Koukab (Dir.)

* Implantable Autonomous Wireless Closed-loop Bio-electronics for Epilepsy Control

R. Ranjandish / A. Schmid (Dir.)

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K. Türe / C. Dehollain; F. Maloberti (Dir.)

* Transadmittance Efficiency under NQS Operation in Asymmetric Double Gate FDSOI MOSFET

S. El Ghouli; J.-M. Sallese; A. Juge; P. Scheer; C. Lallement

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* Analog RF and mm-Wave Design Tradeoff in UTBB FDSOI: Application to a 35 GHz LNA

S. El Ghouli; W. Grabinski; J. M. Sallese; A. Juge; C. Lallement

* Modeling Surface Recombination with Enhanced Devices Network for Optoelectronics

C. Rossi; P. Buccella; C. Stefanucci; J.-M. Sallese

* High Precision Capacitive Moisture Sensor for Polymers

R. M. Dos Santos; J.-M. Sallese; M. Mattavelli; C. Dehollain; D. Barrettino

* SPICE Modeling of Photoelectric Effects in Silicon With Generalized Devices

C. Rossi; P. Buccella; C. Stefanucci; J.-M. Sallese

DOI : 10.1109/JEDS.2018.2817286

* Transient Current Technique characterization of bonded interfaces for monolithic silicon radiation detectors

J. Bronuzzi / J.-M. Sallese; A. Mapelli (Dir.)

* Ultrahigh Fluence Radiation Monitoring Technology for the Future Circular Collider at CERN

G. Gorine; G. Pezzullo; I. Mandic; A. Jazbec; L. Snoj  et al.

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* Principle of the electrically induced Transient Current Technique

J. Bronuzzi; M. Moll; D. Bouvet; A. Mapelli; J. Sallese

DOI : 10.1088/1748-0221/13/05/P05021

* Charge-Based Modeling of Long-Channel Symmetric Double-Gate Junction FETs-Part II: Total Charges and Transcapacitances

N. Makris; F. Jazaeri; J. Sallese; M. Bucher

DOI : 10.1109/TED.2018.2838090

* Charge-Based Model for Ultrathin Junctionless DG FETs, Including Quantum Confinement

M. Shalchian; F. Jazaeri; J. Sallese

DOI : 10.1109/TED.2018.2854905

* Charge-based Model for Junction FETs

F. Jazaeri; N. Makris; A. Saeidi; M. Bucher; J. Sallese

DOI : 10.1109/TED.2018.2830972

* Wearable System with Integrated Passive Microfluidics for Real-Time Electrolyte Sensing in Human Sweat

E. A. Garcia Cordero / M. A. Ionescu (Dir.)

* Development and Characterisation of Silicon Photomultiplier Multichannel Arrays for the Readout of a Large Scale Scintillating Fibre Tracker

A. Kuonen / A. Bay; G. Haefeli (Dir.)

* Learning-Based Hardware Design for Data Acquisition Systems

C. Aprile / V. Cevher; Y. Leblebici (Dir.)

* Novel Digital and Radio Frequency Electronic Functions Enabled by Steep-Slope Phase-Change Devices

E. A. Casu / M. A. Ionescu; M. Fernandez-Bolanos Badia (Dir.)

* Experimental g(m)/I-D Invariance Assessment for Asymmetric Double-Gate FDSOI MOSFET

S. El Ghouli; D. Rideau; F. Monsieur; P. Scheer; G. Gouget  et al.

DOI : 10.1109/Ted.2017.2772804

* An Energy Efficient Power Converter for Zero Power Wearable Devices

M. Ataei Ashtiani / P.-A. Farine; A. Boegli (Dir.)

* Charge-Based Modeling of Long-Channel Symmetric Double-Gate Junction FETs—Part I: Drain Current and Transconductances

N. Markis; F. Jazaeri; J.-M. Sallese; R. K. Sharma; M. Bucher

DOI : 10.1109/TED.2018.2838101