Marc Ilegems

photo placeholder image

Professeur honoraire

marc.ilegems@epfl.ch +41 21 693 34 41 http://people.epfl.ch/marc.ilegems

EPFL SB-DO
CH A3 475 (Bâtiment CH)
Station 6
CH-1015 Lausanne

perm_contact_calendarvCard
Données administratives

Compétences

Solid State Physics, Engineering and Materials Science.

Semiconductor-based technologies and devices for electronics and photonics.

Nanosciences, micro and nano-technologies, quantum electronics and photonics, microcavities, single photon sources and detectors, physics of low dimensional devices.

Infrared and visible lasers for optical communications and displays, light emitting diodes, photonic integrated circuits, photovoltaics, sensors.

III-V and III-nitride wide bandgap semiconductor materials, advanced epitaxial growth and processing techniques.

Publications

Selected publications

Grandjean N, Ilegems M Visible emission from InGaN/GaN quantum-dot materials and devices Proc. IEEE, vol. 95 (9), pp. 1853-1865 (2007) Butte R, Christmann G, Feltin E, Carlin JF, Mosca M, Ilegems M, Grandjean N Room-temperature polariton luminescence from a bulk GaN microcavity Phys. Rev. B 73 (3): Art. No. 033315 JAN 2006 Feltin E, Carlin JF, Dorsaz J, Christmann G, Butté R, Ilegems M, Grandjean N Crack-free highly reflective AlInN/AlGaN Bragg mirrors for UV applications Appl. Phys. Lett. 88 (5): Art. No. 051108 JAN 30 2006 Dorsaz J, Buhlmann HJ, Carlin JF, Ilegems M Selective oxidation of AlInN layers for current confinement in III-nitride devices Appl. Phys. Lett 87 (7): Art. No. 072102 AUG 15 2005 Dorsaz J, Carlin JF, Gradecak S, Ilegems M Progress in AlInN-GaN Bragg reflectors: Application to a microcavity light emitting diode J. Appl. Phys. 97 (8), Art. 084505, 2005 Badilita V, Carlin JF, Ilegems M Control of polarization switching in vertical coupled-cavities surface emitting lasers IEEE Phot. Tech Lett. 16 (2): 365-367 FEB 2004 Gradecak S, Stadelmann P, Wagner V, Ilegems M Bending of dislocations in GaN during epitaxial lateral overgrowth Appl. Phys. Lett. 85 (20), 4648-4650, 2004 Carlin JF, Ilegems M High-quality AlInN for high index contrast Bragg mirrors lattice matched to GaN Appl. Phys Lett. 83 (4): 668-670 JUL 28 2003 Fiore A, Chen JX, Ilegems M Scaling quantum-dot light-emitting diodes to submicrometer sizes Appl. Phys. Lett. 81 (10): 1756-1758 SEP 2 2002 Chen JX, Markus A, Fiore A, Ilegems M Tuning InAs/GaAs quantum dot properties under Stranski-Krastanov growth mode for 1.3 mu m applications J. Appl. Phys. 91 (10): 6710-6716, 2002 Wagner V, Parillaud O, Buhlmann HJ, Ilegems M Influence of the carrier gas composition on morphology, dislocations, and microscopic luminescence properties of selectively grown GaN by hydride vapor phase epitaxy J. Appl. Phys. 92 (3): 1307-1316 AUG 1 2002 Beck M, Hofstetter D, Aellen T, Faist J, Oesterle U, Ilegems M, Melchior H Continuous wave operation of a mid-infrared semiconductor laser at room temperature Science 295 (5553): 301-305 JAN 11 2002 Brunner M., Gulden K., Hovel R., Moser M., Carlin J. F., Stanley R. P., Ilegems M., Continuous-wave dual-wavelength lasing in a two-section vertical-cavity laser, IEEE Photonic Technol. Lett. Vol. 12, pp. 1316-1318, (2000) Carlin J. F., Royo P., Stanley R. P., Houdre R., Spicher J., Oesterle U., Ilegems M. Design and characterization of top-emitting microcavity light- emitting diodes, Semicond. Sci. Technol. Vol. 15, pp. 145-154, (2000) Fiore A., Oesterle U., Stanley R. P., Ilegems M. High-efficiency light-emitting diodes at approximate to 1.3 um using InAs-InGaAs quantum dots, IEEE Photonic Technol. Lett. Vol. 12, pp. 1601-1603, (2000) Houdre R., Weisbuch C., Stanley R. P., Oesterle U., Ilegems M. Nonlinear emission of semiconductor microcavities in the strong coupling regime, Phys. Rev. Lett. Vol. 85, pp. 2793-2796, (2000) Carlin J.-F., Stanley R.P., Pellandini P., Oesterle U. Ilegems M. The dual wavelength Bi-vertical cavity surface-emitting laser, Appl. Phys. Lett. 75, pp. 908-910 (1999). Royo P., Carlin J. F., Spicher J., Stanley R. P., Houdré R., Bardinal V., Oesterle U., Ilegems M. High Efficiency Top-Emitting Microcavity Light-Emitting Diodes, Photonics West '99, SPIE Vol. 3621, pp. 151 ; (1999). S.A. Makohliso, L. Giovangrandi, D. Léonard, H.-J. Mathieu, M. Ilegems, P. Aebischer Application of Teflon-AF thin films for biopatterning of neural cell adhesion. Biosensors and Bioelectronics, 13, 1227, 1998. M. Rochat, J. Faist, M. Beck, U. Oesterle, M. Ilegems Far-infrared (l = 88 mm) electroluminescence in a quantum cascade structure. Appl. Phys. Lett., Vol. 73, pp. 3724-3726, 1998. Jeanneret B., Hall B.D., Jeckelmann B., Feller U., Buehlmann H.J. Ilegems M. Measurements of edgeless currents in a Corbino ring in the quantum Hall regime, Solid State Comm. 102, 287-290, 1997 Pellandini P., Stanley R.P., Houdré R., Oesterle U., Ilegems M., Weisbuch C. Dual-wavelength laser emission from a coupled semiconductor microcavity, Appl. Phys. Lett. 71, 864-866, 1997 Beck M., Ilegems M. Influence of growth conditions on mobility and anisotropy of InyGa1-yAs/In0.52Al0.48As/InP HEMTs Proc.8th Int. Conf. on InP and related materials, pp. 97-100 (1996). Carlin J.F., Rudra A., Ilegems M. Pseudomorphic InGaAs/In(Ga)AsP bidimentional electron gas grown by chemical beam epitaxy, J. Cryst. Growth 164, 470-475, 1996. Houdré R., Stanley R.P., Ilegems M. Strong coupling régime in the presence of inhomogeneous broadening : Resolution of a homogeneous linewidth in an inhomogeneously broadened system, Phys. Rev. A53, 2711-2715 (1996) Stanley R.P., Houdré R., C. Weisbuch, Oesterle U., Ilegems M. Cavity polariton photoluminescence in semiconductor microcavities : Experimental evidence, Phys. Rev. B53, 10 995-11 007 (1996) Spicher J., Klepser U., Beck M., Rudra A., Sachot R., Ilegems M., A 20 Gbit/s Monolithic photoreceiver using InAlAs/InGaAs HEMTs and regrown GaInAs p-i-n photodiodes, Proc. 8th Int. Conf. on InP and related materials, pp. 439-442 (1996). Hugi J., Haddab Y., Sachot R., Ilegems M. Carrier trapping in ultrafast metal-semiconductor-metal photodetectors on InGaAs /GaAs-on-GaAs superlattices. J. Appl. Phys. 77, 1785-1794, 1995. Ilegems M "III-V Compound semiconductor epitaxy for optoelectronic integration", in "Optoelectronic Integration: Physics, Technology and Applications", edited by O. Wada, pp. 61-106, Kluwer Academic Publishers, Boston, 1994 Houdré R., Stanley R.P., Oesterle U., Ilegems M., Weisbuch C. Room temperature cavity-polaritons in a semiconductor microcavity. Phys. Rev. B 49, 16761-16764, 1994. Houdré R., Weisbuch C., Stanley, R.P., Oesterle U., Pellandini P., Ilegems M. Measurement of cavity-polariton dispersion curves from angle resolved photoluminescence experiments, Phys. Rev. Lett. 73, 2043-2046 (1994) Stanley R.P., Houidré R., Oesterle O., Gailhanou M., Ilegems M. Ultrahigh finesse microcavity with distributed Bragg reflectors, Appl. Phys. Lett. 65, 1883-1885 (1994) Stanley R., Houdré R., Oesterle U., Ilegems M., Weisbuch C. Coupled semiconductor microcavities, Appl. Phys. Lett. 65, 2093-2095 (1994) Rudra A., Houdré R., Carlin J.F., Ilegems M. Dynamics of island formation in the growth of InAs/InP quantum wells J. Crystal Growth 136, 278-281 (1994) Ilegems M. InP-based lattice-matched heterostructures, in "Properties of lattice-matched and strained Indium Gallium Arsenide", edited by P. Bhattacharya, pp. 16-25, EMIS Datareviews Series No 8 (INSPEC, London, 1993). Stanley R.P., Houdre R., Oesterle U., Ilegems M. Impurity Modes in One-Dimensional Periodic Systems - The Transition from Photonic Band-Gaps to Microcavities, Phys. Rev. A48, 2246 (1993). Carlin F, Houdré R, Rudra A., Ilegems M. Island formation in ultra-thin InAs/InP quantum wells grown by chemical beam epitaxy Appl. Phys. Lett. 59, pp 3018 - 3020, 1991 Gueissaz F., Houdré R., Ilegems M. DC and RF characteristics of InAlAs/InGaAs dual-gate TEGFET's. Electron. Lett. 27, 631-632, 1991. A. Acovic, M. Dutoit, M. Ilegems Characterization of Hot-Electron-Stressed MOSFETs by Measurements of the Drain Tunnel Current. IEEE Trans. Electron Devices ED 37, 1467-1476, 1990 M. Zirngibl, J.C. Bischoff, M. Ilegems, J.P. Hirtz, B. Bartelian, P. Beaud, W. Hodel High Speed 1.3 mm InGaAs/GaAs Superlattice on Si Photodetector. Electronics Letters 26, 1027-1029, 1990 M. Ilegems An introduction to molecular beam epitaxy, in "Crystal Growth in Science and Technology", H. Arend and J. Hulliger, editors, Nato ASI Series B, vol. 210. Plenum, New York (1988), pp. 359-395 W. Schwitz, L. Bauder, H.J. Bühlmann, M.A. Py, M. Ilegems The Quantum Hall Effect as a standard to define the laboratory unit of resistance, IEEE Trans. Instrum. Meas. IM-36, 240 (1987) P. Fazan, M. Dutoit, C. Martin, M. Ilegems Charge generation in thin SiO2 polysilicon gate MOS capacitors, Solid State Electron. 30, 829 (1987) T.A. Achtnich, G. Burri, M.A. Py, M. Ilegems SIMS study of oxygen accumulation at GaAs/AlCaAs interJaces grown by MBE, Appl. Phys. Lett., 1730 (1987) M. Ilegems Properties of III-V layers, in "The Technology and Physics of Molecular Beam Epitaxv", E.H.C. Parker ed. (Plenum, New York, 1985), p. 83 M. Ilegems Applications of selectively-doped two-dimensional electron layers, Helv. Phys. Acta 58, 383 (1985) P.K. Bhattacharya, H.J. Bühlmann, M. Ilegems, J.L. Staehli Impurity and defect level characterization of Be-doped GaAs grown by molecular beam epitaxy, J. Appl.Phys. 53, 6391 (1982) W.T. Tsang, R.A. Logan, M. Ilegems High power fundamental transverse mode strip buried heterostructure lasers wih linear light-current characteristics, Appl. Phys. Lett. 32, 311 (1978) M. Ilegems, B. Schwartz, L.A. Koszi, R.L. Miller Integrated multi-junction GaAs photodetector with high output voltage, Appl. Phys. Lett. 33, 629 (1978) W.T. Tsang, M. Ilegems Selective area growth of GaAs/AlGaAs multilayer structures wih molecular beam epitaxy using Si shadow masks, Appl. Phys. Lett. 31, 301 (1977) M. Ilegems Be doping and diffusion in molecular beam epitaxy of GaAs and Al.3Ga.7As, J. Appl. Phys. 48, 1278 (1977) J.P. Van der Ziel, M. Ilegems Optical second harmonic generation in periodic multilayer GaAs - AlGaAs structures, Appl. Phys. Lett. 28, 437 (1976) A.S. Jordan, M. Ilegems Solid-liquid equilibria for quaternary solid solutions in the regular solution approximation J. Phys. Chem. Solids 36, 329 (1975) M. Ilegems, R. Dingle Acceptor incorporation in GaAs grown by molecular beam epitaxy, Proc. 5th Int. Symp. on GaAs (Institute of Physics, London, 1975), p.1 M. Ilegems, R. Dingle, L.W. Rupp Optical and electrical properties of Mn-doped GaAs grown by molecular beam epitaxy, J. Appl. Phys. 46, 3059 (1975) H.C. Casey, S. Somekh, M. Ilegems Room temperature operation of low threshold separate-confinement heterostructure injection laser with distributed feedback, Appl. Phys. Lett. 27, 142 (1975) J.P. Van der Ziel, M. Ilegems Multilayer AlGaAs - GaAs dielectric quarter-wave stacks grown by MBE, Appl. Optics, 14, 2627 (1975) M. Ilegems, M.B. Panish Phase equilibria in III-V quaternary systems -Application to Al-Ga-P-As, J. Phys. Chem. Solids 35, 409 (1974) M. Ilegems, H.C. Montgomery Electrical properties of n-type vapor grown GaN, J. Phys. Chem Solids 34, 885 (1973) A.S. Barker, M. Ilegems Infrared lattice vibrations and free electron dispersion in GaN, Phys. Rev. B7, 743 (1973) M. Ilegems Vapor epitaxy of GaN, J. Crystal Growth 13/14, 360 (1972) M. Ilegems, R. Dingle, R.A. Logan Luminescence of Zn- and Cd- doped GaN, J. Appl. Phys. 43, 3797 (1972) M.B. Panish, M. Ilegems Phase equilibria in ternary III-V systems, in "Progress in Solid State Chemistry" Vol. 7, H. Reiss, J.O. Mc Caldin eds. (Pergamon Press, New York, 1972), p. 39 R. Dingle, D.D. Sell, S.E. Stokowski, M. Ilegems Absorption, reflectance and luminescence of GaN epitaxial layers, Phys. Rev. B4, 1211 (1971) R. Dingle, M. Ilegems Donor-acceptor pair recombination in GaN, Solid State Commun. 2, 175 (1971 ) M. Ilegems, G.L. Pearson Infrared reflectance spectra of Al-Ga-As mixed crystals, Phys. Rev. Bl, 1576 (1970)

Patents

Liquid phase diffusion technique Marc llegems, Morton B. Panish United States Patent US 3,725,149 Integrated optical detectors Marc Ilegems, Louis A. Koszi, Bertram Schwartz United States Patent US 4,127,862 Buried double heterostructure laser device Robert L. Hartman, Marc Ilegems, Louis A. Koszi, Wilfried R. Wagner United States Patent US 4,230,997 Nonvolatile MOSFET EEPROM cell Bühlmann H.J., Olcer M., Ilegems M. Swiss Patent CH 665918-A 1988-19086 Electroluminescent device for screen of portable computer or television Ilegems M., Schaer M., Zuppiroli L. European Patent WO 9738558-A; EP 891686-A Lattice-matched AlInN/GaN for optoelectronic devices Carlin J.-F., Ilegems M. United States Patent application US 2007-003697A1 / 2007-21799

Doctoral Thesis Advisor

Dorsaz, Julien Lattice-matched allnN alloys for nitride-based optoelectronic devices (2006) Joray, Reto Microcavity light emitting diodes in the visible red and near infrared wavelength range (2004) Badilita, Vlad Study of vertical coupled-cavity laser structures (2004) Zellweger, Christoph Realization of GaN-based light emitting devices (2003) Wagner, Volker Growth of GaN by hydride vapor phase epitaxy (2001) Ochoa, Daniel Diodes électroluminescentes planaires à haut rendement d'extraction lumineuse (2001) Brunner, Marcel Design and characterization of single and dual cavity oxide-apertured VCSELs (2000) Royo, Paul Light extraction from microcavity light emitting diodes : optimization and characterization of high-brightness AlGaInP-based devices (2000) Giovangrandi, Laurent Biopatterning of neural cells on microelectrode arrays (1999) Dill, Christian Fabrication and characterization of high efficiency microcavity light emitting diodes (1999) Gotza, Martin Fabrication and optical characterization of silicon nanowires (1997) Bouvet, Didier Etude et optimisation de couches minces de SiO2 nitrurées sous N2O (1997) Spicher, Jacques Photorécepteurs 1,3-1,55 mm obtenus par intégration monolithique de photodiodes p-i-n et de transisitors HEMT (1996) Beck, Mattias Growth and characterization of strained InAlAs/InGaAs heterostructures for high-frequency applications (1996) Haddab, Youcef Etude des niveaux profonds dans des transistors à gaz bidimensionnel d'électrons sur des substrats de GaAs et InP (1995) Gailhanou, Marc Etude de la structure latérale de monocristaux semiconducteurs par diffraction de rayons X triple crystal (1995) Oesterle, Ursula Growth and characterization of novel vertical emitting semiconductor structures (1994) Hugi, Johannes Ultrafast MSM photodetectors on InGaAs/GaAs superlattices (1994) Carlin, Jean-François Chemical beam epitaxy of GaInAsP quaternary compounds for optoelectronic devices (1993) Baeta Moreira, Marcus Vinicius Epitaxie et caractérisation d'hétérostructures à canal InGaAs ou superréseau InAs / GaAs sur substrat GaAs (1992) Gueissaz, François Etude et réalisation de transistors à effet de champ à hétérojonctions AlInAs / GaInAs / InP pour les applications en hyperfréquences (1992) Zirngibl, Martin High speed photodetectors on strained superlattices (1990) Manthey, Jacek Tadeusz Degradation of thin silicon dioxide films and eeprom cells(1990) Acovic, Alexandre Hot electron degradation in short-channel MOS transistors (1989) Théron, Didier Etude de TEGFETs multicanaux (1989) Zimmermann, Piller Beate Modeling of III-V semiconductor devices (1989) Bischoff, Jean-Claude Composants ultra-rapides pour communications optiques (1988) Achtnich, Thomas Martin Charakterisierung von Defekten in epitaktischem ALGaAs, hergestellt mittels Molekularstrahlen (1988) Marclay, Etienne Transport and tunneling through small potential barriers in III-V semiconductor heterostructures (1988) Fazan, Pierre-Christophe Fabrication et caractérisation de couches diélectriques minces utilisées en technologie MOS (1988) Olcer, Murat Injection, conduction et piégeage de charges dans l'oxyde de silicium (1985) Nottenburg, Richard Norman Molecular beam epitaxy of GaAs and AlGaAs and application to heterojunction phototransistors (1984)