Marc Ilegems

EPFL SB-DO
CH A3 475 (Bâtiment CH)
Station 6
CH-1015 Lausanne

Données administratives

Compétences

Solid State Physics, Engineering and Materials Science.

Semiconductor-based technologies and devices for electronics and photonics.

Nanosciences, micro and nano-technologies, quantum electronics and photonics, microcavities, single photon sources and detectors, physics of low dimensional devices.

Infrared and visible lasers for optical communications and displays, light emitting diodes, photonic integrated circuits, photovoltaics, sensors.

III-V and III-nitride wide bandgap semiconductor materials, advanced epitaxial growth and processing techniques.

Publications

Enseignement & Phd

Enseignement

Programmes doctoraux

Doctorants

Dissertations

Dorsaz, Julien Lattice-matched allnN alloys for nitride-based optoelectronic devices (2006) Joray, Reto Microcavity light emitting diodes in the visible red and near infrared wavelength range (2004) Badilita, Vlad Study of vertical coupled-cavity laser structures (2004) Zellweger, Christoph Realization of GaN-based light emitting devices (2003) Wagner, Volker Growth of GaN by hydride vapor phase epitaxy (2001) Ochoa, Daniel Diodes électroluminescentes planaires à haut rendement d'extraction lumineuse (2001) Brunner, Marcel Design and characterization of single and dual cavity oxide-apertured VCSELs (2000) Royo, Paul Light extraction from microcavity light emitting diodes : optimization and characterization of high-brightness AlGaInP-based devices (2000) Giovangrandi, Laurent Biopatterning of neural cells on microelectrode arrays (1999) Dill, Christian Fabrication and characterization of high efficiency microcavity light emitting diodes (1999) Gotza, Martin Fabrication and optical characterization of silicon nanowires (1997) Bouvet, Didier Etude et optimisation de couches minces de SiO2 nitrurées sous N2O (1997) Spicher, Jacques Photorécepteurs 1,3-1,55 mm obtenus par intégration monolithique de photodiodes p-i-n et de transisitors HEMT (1996) Beck, Mattias Growth and characterization of strained InAlAs/InGaAs heterostructures for high-frequency applications (1996) Haddab, Youcef Etude des niveaux profonds dans des transistors à gaz bidimensionnel d'électrons sur des substrats de GaAs et InP (1995) Gailhanou, Marc Etude de la structure latérale de monocristaux semiconducteurs par diffraction de rayons X triple crystal (1995) Oesterle, Ursula Growth and characterization of novel vertical emitting semiconductor structures (1994) Hugi, Johannes Ultrafast MSM photodetectors on InGaAs/GaAs superlattices (1994) Carlin, Jean-François Chemical beam epitaxy of GaInAsP quaternary compounds for optoelectronic devices (1993) Baeta Moreira, Marcus Vinicius Epitaxie et caractérisation d'hétérostructures à canal InGaAs ou superréseau InAs / GaAs sur substrat GaAs (1992) Gueissaz, François Etude et réalisation de transistors à effet de champ à hétérojonctions AlInAs / GaInAs / InP pour les applications en hyperfréquences (1992) Zirngibl, Martin High speed photodetectors on strained superlattices (1990) Manthey, Jacek Tadeusz Degradation of thin silicon dioxide films and eeprom cells(1990) Acovic, Alexandre Hot electron degradation in short-channel MOS transistors (1989) Théron, Didier Etude de TEGFETs multicanaux (1989) Zimmermann, Piller Beate Modeling of III-V semiconductor devices (1989) Bischoff, Jean-Claude Composants ultra-rapides pour communications optiques (1988) Achtnich, Thomas Martin Charakterisierung von Defekten in epitaktischem ALGaAs, hergestellt mittels Molekularstrahlen (1988) Marclay, Etienne Transport and tunneling through small potential barriers in III-V semiconductor heterostructures (1988) Fazan, Pierre-Christophe Fabrication et caractérisation de couches diélectriques minces utilisées en technologie MOS (1988) Olcer, Murat Injection, conduction et piégeage de charges dans l'oxyde de silicium (1985) Nottenburg, Richard Norman Molecular beam epitaxy of GaAs and AlGaAs and application to heterojunction phototransistors (1984)