EPFL E E-DAF EPFL-GYMN
Exploring quantized structures based on emerging semiconductors in both photonics and electronics. This covers a broad research area starting from fundamental studies around light-matter interaction in microcavities and nanostructures, to photonic devices such as blue lasers and superluminescent light emitting diodes.
These activities are supported by Swiss national projects (FNS, CTI/KTI, and NCCR "Quantum Photonics"), European projects, and contracts with industrial partners.
Nicolas Grandjean was born in France and received his PhD degree in Physics from the University of Nice-Sophia Antipolis in 1994. He was working during his PhD thesis on III-V semiconductor heterostructures. From 1994 to 2003, he was a member of the permanent staff at the French National Center for Scientific Research (CNRS) where he studied the physics of GaN semiconductor based nanostructures. In 2004, he was appointed tenure-track Assistant Professor at the Ecole polytechnique fédérale de Lausanne (EPFL). He was promotted Full Professor in Physics in 2009. Since 2012 he is acting as Director of the Institute of Condensed Matter Physics. He was awarded the Sandoz Family Foundation grant for Academic Promotion in 2004 and received in 2010 the Nakamura Lecturer award from the University of California at Santa Barbara (UCSB). He is author or co-author of about 400 publications in peer-reviewed international journals, 5 book chapters, and 4 patents. He has been Scientific Advisor for a large industrial group and participated to the creation of a start-up (Novagan). His current research activities are centered on the physics and technology of III-V nitride semiconductors, in particular on microcavities, nanostructures,and 2D electron gas.
|J. Levrat, R. Butté, T. Christian, M. Glauser, E. Feltin, J.-F. Carlin, N. Grandjean, D. Read, A. V. Kavokin, Y. G. Rubo
Phys. Rev. Lett. 104, 166402 (2010)
|Pinning and depinning of the Polarization of Exciton-Polariton Condensates at Room Temperature|
|R. Butté, J. Levrat, G. Christmann, E. Feltin, J.-F. Carlin, and N. Grandjean
Phys. Rev. B 80, 233301 (2009)
|Phase diagram of a polariton laser from cryogenic to room temperature|
|J. J. Baumberg, A. V. Kavokin, S. Christopoulos, A. J. D. Grundy, R. Butté, G. Christmann, D. D. Solnyshkov, G. Malpuech, G. Baldassarri Höger von Högersthal, E. Feltin, J.-F. Carlin, and N. Grandjean
Phys. Rev. Lett. 101, 136409 (2008)
|Spontaneous Polarization Buildup in a Room-Temperature Polariton Laser|
|D. Simeonov, A. Dussaigne, R. Butté, and N. Grandjean
Phys. Rev. B 77, 075306 (2008)
|Complex behavior of biexcitons in GaN quantum dots due to a giant built-in polarization field|
|A. Castiglia, E. Feltin, J. Dorsaz, G. Cosendey, J.-F. Carlin, R. Butte, and N. Grandjean
Electron. Lett., 44, 521 (2008)
|Blue laser diodes including lattice-matched Al0.83In0.17N bottom cladding layer|
|Gabriel Christmann, Raphaël Butté, Eric Feltin, Anas Mouti, Pierre A. Stadelmann, Antonino Castiglia, Jean-François Carlin, and Nicolas Grandjean
Phys. Rev. B 77, 085310 (2008)
|Large vacuum Rabi splitting in a multiple quantum well GaN-based microcavity in the strong-coupling regime|
|S. Christopoulos, G. Baldassarri Hoger von Hogersthal, A. J. D. Grundy, P. G. Lagoudakis, A.V. Kavokin, and J. J. Baumberg, G. Christmann, R. Butté, E. Feltin, J.-F. Carlin, and N. Grandjean
Phys. Rev. Lett. 98, 126405 (2007)
|Room-Temperature Polariton Lasing in Semiconductor Microcavities|
|M. Gonschorek, J.-F. Carlin, E. Feltin, M. A. Py, and N. Grandjean
Appl. Phys. Lett. 89, 062106 (2006)
|High electron mobility lattice-matched AlInN/GaN field-effect transistor heterostructures|
|E. Baumann, F. R. Giorgetta, D. Hofstetter, S. Golka, W. Schrenk, G. Strasser, L. Kirste, S. Nicolay, E. Feltin, J. F. Carlin, and N. Grandjean
Appl. Phys. Lett. 89, 041106 (2006)
|Near infrared absorption and room temperature photovoltaic response in AlN/GaN superlattices grown by metal-organic vapor-phase epitaxy|
|G. Christmann, R. Butté, E. Feltin, J.-F. Carlin, and N. Grandjean
Phys. Rev. B 73, 153305 (2006)
|Impact of inhomogeneous excitonic broadening on the strong exciton-photon coupling in quantum well nitride microcavities|
|F. Natali, D. Byrne, M. Leroux, B. Damilano, F. Semond, A. Le Louarn, S. Vezian, N. Grandjean, and J. Massies
Phys. Rev. B 71 (7), (2005)
|Inhomogeneous broadening of AlxGa1-xN/GaN quantum wells|
|P. Lefebvre, S. Kalliakos, T. Bretagnon, P. Valvin, T. Taliercio, B. Gil, N. Grandjean, and J. Massies
Phys. Rev. B 69 (3), (2004)
|Observation and modeling of the time-dependent descreening of internal electric field in a wurtzite GaN/Al0.15Ga0.85N quantum well after high photoexcitation|
|B. Damilano, N. Grandjean, C. Pernot, and J. Massies
Jpn. J Appl. Phys. Lett. 40, L918 (2001)
|Monolithic white light emitting diodes based on InGaN/GaN multiple-quantum wells|
|K. Moumanis, A. Helman, F. Fossard, M. Tchernycheva, A. Lusson, F. H. Julien, B. Damilano, N. Grandjean, and J. Massies
Appl. Phys. Lett. 82 (6), 868 (2003)
|Intraband absorptions in GaN/AlN quantum dots in the wavelength range of 1.27-2.4 µm|
|B. Beaumont, P. Gibart, N. Grandjean, and J. Massies
C.R. Acad. Sci. Paris, t.1, Série IV, 35 (2000)
|Growth of Gallium nitride epitaxial layers and applications|
|M. Leroux, N. Grandjean, J. Massies, B. Gil, P. Lefebvre, and P. Bigenwald
Phys. Rev. Rapid Comm B 58, R13371 (1998)
|Quantum confined Stark effect due to built-in internal polarization field in (Al,Ga)N/GaN quantum wells|
|B. Damilano, N. Grandjean, F. Semond, J. Massies and M. Leroux
Appl. Phys. Lett. 75, 962 (1999)
|From visible to white light emission by GaN quantum dots on Si(111) substrate|
|N. Grandjean, J. Massies, and O Tottereau
Phys. Rev. Rapid Comm. B 55, R10189 (1997)
|Surface segregation in (Ga,In)As/GaAs quantum boxes|
|N. Grandjean and J. Massies
Phys. Rev. Rapid Comm. B 53, R13231 (1996)
|Kinetics of surfactant-mediated epitaxy of III-V semiconductors|
|N. Grandjean, J. Massies, and M. Leroux
Phys. Rev. B 53, 998 (1996)
|Monte Carlo simulation of In surface segregation during the growth of InxGa1-xAs on GaAs(001)|
|J. Massies and N. Grandjean
Phys. Rev. Lett. 71, 1411 (1993)
|Oscillation of the lattice relaxation in layer-by-layer epitaxial growth of highly strained materials|
|M. Leroux, N. Grandjean, B. Chastaingt, C. Deparis, G. Neu, and J. Massies
Phys. Rev. B 45, 11846 (1992)
|Confined electron states in ultrathin AlAs single quantum wells under pressure|
|N. Grandjean, J. Massies, and V.H. Etgens
Phys. Rev. Lett. 69, 796 (1992)
|Delayed relaxation by surfactant action in highly strained III-V semiconductor epitaxial layers|
Enseignement & Phd
- Doctoral Program in Physics
- Doctoral Program in Photonics
Tamariz Kaufmann Sebastian Pascal
Weatherley Thomas Fjord Kjaersgaard
A dirigé les thèses deChristmann Gabriel ...
Ciers Joachim Armand Simonne ...
Cosendey Gatien ...
Giraud Etienne ...
Glauser Marlene ...
Gonschorek Marcus ...
Kaufmann Nils Asmus Kristian ...
Levrat Jacques ...
Lugani Lorenzo ...
Malinverni Marco ...
Mouti Anas ...
Nicolay Sylvain ...
Rossbach Georg ...
Rousseau Ian Michael ...
Simeonov Dobri ...
Sulmoni Luca Alex Milo ...
Vico Triviño Noelia ...
Zeng Xi ...
Zhu Tiankai ...
Le but du cours de physique générale est de donner à l'étudiant les notions de base nécessaires à la compréhension des phénomènes physiques. L'objectif est atteint lorsque l'étudiant est capable de prévoir quantitativement les conséquences de ces phénomèn...Génie électrique et électronique , 2018-2019, Bachelor semestre 1, language : français
Microtechnique, 2018-2019, Bachelor semestre 1, language : français
Science et génie des matériaux, 2018-2019, Bachelor semestre 1, language : français