Nicolas Grandjean

Full Professor
nicolas.grandjean@epfl.ch +41 21 693 34 44
EPFL SB IPHYS LASPE
PH D3 325 (Bâtiment PH)
Station 3
CH-1015 Lausanne
+41 21 693 34 44
+41 21 693 34 42
Office: PH D3 334
EPFL > SB > IPHYS > LASPE
Web site: Web site: https://laspe.epfl.ch/
EPFL SB SPH-GE
PH D3 334 (Bâtiment PH)
Station 3
CH-1015 Lausanne
+41 21 693 34 44
+41 21 693 79 15
Office: PH D3 334
EPFL > SB > SB-SPH > SPH-GE
+41 21 693 34 44
EPFL > E > E-EBM > CDS
Web site: Web site: https://dms.epfl.ch/DOCS/E/CDS
+41 21 693 34 44
EPFL > E > E-DAF > EPFL-GYMN
+41 21 693 34 44
EPFL > ENT-R > CMI > CMI-CD
Mission
Biography
Publications
Selected publications
J. Levrat, R. Butt�, T. Christian, M. Glauser, E. Feltin, J.-F. Carlin, N. Grandjean, D. Read, A. V. Kavokin, Y. G. Rubo Phys. Rev. Lett. 104, 166402 (2010) |
Pinning and depinning of the Polarization of Exciton-Polariton Condensates at Room Temperature |
R. Butt�, J. Levrat, G. Christmann, E. Feltin, J.-F. Carlin, and N. Grandjean Phys. Rev. B 80, 233301 (2009) |
Phase diagram of a polariton laser from cryogenic to room temperature |
J. J. Baumberg, A. V. Kavokin, S. Christopoulos, A. J. D. Grundy, R. Butt�, G. Christmann, D. D. Solnyshkov, G. Malpuech, G. Baldassarri H�ger von H�gersthal, E. Feltin, J.-F. Carlin, and N. Grandjean
Phys. Rev. Lett. 101, 136409 (2008) |
Spontaneous Polarization Buildup in a Room-Temperature Polariton Laser |
D. Simeonov, A. Dussaigne, R. Butt�, and N. Grandjean
Phys. Rev. B 77, 075306 (2008) |
Complex behavior of biexcitons in GaN quantum dots due to a giant built-in polarization field |
A. Castiglia, E. Feltin, J. Dorsaz, G. Cosendey, J.-F. Carlin, R. Butte, and N. Grandjean
Electron. Lett., 44, 521 (2008) |
Blue laser diodes including lattice-matched Al0.83In0.17N bottom cladding layer |
Gabriel Christmann, Rapha�l Butt�, Eric Feltin, Anas Mouti, Pierre A. Stadelmann, Antonino Castiglia, Jean-Fran�ois Carlin, and Nicolas Grandjean
Phys. Rev. B 77, 085310 (2008) |
Large vacuum Rabi splitting in a multiple quantum well GaN-based microcavity in the strong-coupling regime |
S. Christopoulos, G. Baldassarri Hoger von Hogersthal, A. J. D. Grundy, P. G. Lagoudakis, A.V. Kavokin, and J. J. Baumberg, G. Christmann, R. Butt�, E. Feltin, J.-F. Carlin, and N. Grandjean
Phys. Rev. Lett. 98, 126405 (2007) |
Room-Temperature Polariton Lasing in Semiconductor Microcavities |
M. Gonschorek, J.-F. Carlin, E. Feltin, M. A. Py, and N. Grandjean Appl. Phys. Lett. 89, 062106 (2006) |
High electron mobility lattice-matched AlInN/GaN field-effect transistor heterostructures |
E. Baumann, F. R. Giorgetta, D. Hofstetter, S. Golka, W. Schrenk, G. Strasser, L. Kirste, S. Nicolay, E. Feltin, J. F. Carlin, and N. Grandjean Appl. Phys. Lett. 89, 041106 (2006) |
Near infrared absorption and room temperature photovoltaic response in AlN/GaN superlattices grown by metal-organic vapor-phase epitaxy |
G. Christmann, R. Butt�, E. Feltin, J.-F. Carlin, and N. Grandjean
Phys. Rev. B 73, 153305 (2006) |
Impact of inhomogeneous excitonic broadening on the strong exciton-photon coupling in quantum well nitride microcavities |
F. Natali, D. Byrne, M. Leroux, B. Damilano, F. Semond, A. Le Louarn, S. Vezian, N. Grandjean, and J. Massies Phys. Rev. B 71 (7), (2005) |
Inhomogeneous broadening of AlxGa1-xN/GaN quantum wells |
P. Lefebvre, S. Kalliakos, T. Bretagnon, P. Valvin, T. Taliercio, B. Gil, N. Grandjean, and J. Massies Phys. Rev. B 69 (3), (2004) |
Observation and modeling of the time-dependent descreening of internal electric field in a wurtzite GaN/Al0.15Ga0.85N quantum well after high photoexcitation |
B. Damilano, N. Grandjean, C. Pernot, and J. Massies Jpn. J Appl. Phys. Lett. 40, L918 (2001) |
Monolithic white light emitting diodes based on InGaN/GaN multiple-quantum wells |
K. Moumanis, A. Helman, F. Fossard, M. Tchernycheva, A. Lusson, F. H. Julien, B. Damilano, N. Grandjean, and J. Massies Appl. Phys. Lett. 82 (6), 868 (2003) |
Intraband absorptions in GaN/AlN quantum dots in the wavelength range of 1.27-2.4 �m |
B. Beaumont, P. Gibart, N. Grandjean, and J. Massies C.R. Acad. Sci. Paris, t.1, S�rie IV, 35 (2000) |
Growth of Gallium nitride epitaxial layers and applications |
M. Leroux, N. Grandjean, J. Massies, B. Gil, P. Lefebvre, and P. Bigenwald Phys. Rev. Rapid Comm B 58, R13371 (1998) |
Quantum confined Stark effect due to built-in internal polarization field in (Al,Ga)N/GaN quantum wells |
B. Damilano, N. Grandjean, F. Semond, J. Massies and M. Leroux Appl. Phys. Lett. 75, 962 (1999) |
From visible to white light emission by GaN quantum dots on Si(111) substrate |
N. Grandjean, J. Massies, and O Tottereau Phys. Rev. Rapid Comm. B 55, R10189 (1997) |
Surface segregation in (Ga,In)As/GaAs quantum boxes |
N. Grandjean and J. Massies Phys. Rev. Rapid Comm. B 53, R13231 (1996) |
Kinetics of surfactant-mediated epitaxy of III-V semiconductors |
N. Grandjean, J. Massies, and M. Leroux Phys. Rev. B 53, 998 (1996) |
Monte Carlo simulation of In surface segregation during the growth of InxGa1-xAs on GaAs(001) |
J. Massies and N. Grandjean Phys. Rev. Lett. 71, 1411 (1993) |
Oscillation of the lattice relaxation in layer-by-layer epitaxial growth of highly strained materials |
M. Leroux, N. Grandjean, B. Chastaingt, C. Deparis, G. Neu, and J. Massies Phys. Rev. B 45, 11846 (1992) |
Confined electron states in ultrathin AlAs single quantum wells under pressure |
N. Grandjean, J. Massies, and V.H. Etgens Phys. Rev. Lett. 69, 796 (1992) |
Delayed relaxation by surfactant action in highly strained III-V semiconductor epitaxial layers |
Teaching & PhD
Teaching
Physics