Nicolas Grandjean

photo placeholder image

Professeur ordinaire

nicolas.grandjean@epfl.ch +41 21 69 33444

EPFL SB IPHYS LASPE
PH D3 325 (Bâtiment PH)
Station 3
CH-1015 Lausanne

Unité: SPH-ENS

EPFL STI IMX-GE
PH D3 334 (Bâtiment PH)
Station 3
CH-1015 Lausanne

EPFL SB SPH-GE
PH D3 334 (Bâtiment PH)
Station 3
CH-1015 Lausanne

Site web: http://cds.epfl.ch/
Unité: CDS

Unité: EPFL-GYMN

Unité: CMI-CD

perm_contact_calendarvCard
Données administratives

Publications

Autres publications

J. Levrat, R. Butt�, T. Christian, M. Glauser, E. Feltin, J.-F. Carlin, N. Grandjean, D. Read, A. V. Kavokin, Y. G. Rubo
Phys. Rev. Lett. 104, 166402 (2010)
Pinning and depinning of the Polarization of Exciton-Polariton Condensates at Room Temperature
R. Butt�, J. Levrat, G. Christmann, E. Feltin, J.-F. Carlin, and N. Grandjean
Phys. Rev. B 80, 233301 (2009)
Phase diagram of a polariton laser from cryogenic to room temperature
J. J. Baumberg, A. V. Kavokin, S. Christopoulos, A. J. D. Grundy, R. Butt�, G. Christmann, D. D. Solnyshkov, G. Malpuech, G. Baldassarri H�ger von H�gersthal, E. Feltin, J.-F. Carlin, and N. Grandjean
Phys. Rev. Lett. 101, 136409 (2008)
Spontaneous Polarization Buildup in a Room-Temperature Polariton Laser
D. Simeonov, A. Dussaigne, R. Butt�, and N. Grandjean
Phys. Rev. B 77, 075306 (2008)
Complex behavior of biexcitons in GaN quantum dots due to a giant built-in polarization field
A. Castiglia, E. Feltin, J. Dorsaz, G. Cosendey, J.-F. Carlin, R. Butte, and N. Grandjean
Electron. Lett., 44, 521 (2008)
Blue laser diodes including lattice-matched Al0.83In0.17N bottom cladding layer
Gabriel Christmann, Rapha�l Butt�, Eric Feltin, Anas Mouti, Pierre A. Stadelmann, Antonino Castiglia, Jean-Fran�ois Carlin, and Nicolas Grandjean
Phys. Rev. B 77, 085310 (2008)
Large vacuum Rabi splitting in a multiple quantum well GaN-based microcavity in the strong-coupling regime
S. Christopoulos, G. Baldassarri Hoger von Hogersthal, A. J. D. Grundy, P. G. Lagoudakis, A.V. Kavokin, and J. J. Baumberg, G. Christmann, R. Butt�, E. Feltin, J.-F. Carlin, and N. Grandjean
Phys. Rev. Lett. 98, 126405 (2007)
Room-Temperature Polariton Lasing in Semiconductor Microcavities
M. Gonschorek, J.-F. Carlin, E. Feltin, M. A. Py, and N. Grandjean
Appl. Phys. Lett. 89, 062106 (2006)
High electron mobility lattice-matched AlInN/GaN field-effect transistor heterostructures
E. Baumann, F. R. Giorgetta, D. Hofstetter, S. Golka, W. Schrenk, G. Strasser, L. Kirste, S. Nicolay, E. Feltin, J. F. Carlin, and N. Grandjean
Appl. Phys. Lett. 89, 041106 (2006)
Near infrared absorption and room temperature photovoltaic response in AlN/GaN superlattices grown by metal-organic vapor-phase epitaxy
G. Christmann, R. Butt�, E. Feltin, J.-F. Carlin, and N. Grandjean
Phys. Rev. B 73, 153305 (2006)
Impact of inhomogeneous excitonic broadening on the strong exciton-photon coupling in quantum well nitride microcavities
F. Natali, D. Byrne, M. Leroux, B. Damilano, F. Semond, A. Le Louarn, S. Vezian, N. Grandjean, and J. Massies
Phys. Rev. B 71 (7), (2005)
Inhomogeneous broadening of AlxGa1-xN/GaN quantum wells
P. Lefebvre, S. Kalliakos, T. Bretagnon, P. Valvin, T. Taliercio, B. Gil, N. Grandjean, and J. Massies
Phys. Rev. B 69 (3), (2004)
Observation and modeling of the time-dependent descreening of internal electric field in a wurtzite GaN/Al0.15Ga0.85N quantum well after high photoexcitation
B. Damilano, N. Grandjean, C. Pernot, and J. Massies
Jpn. J Appl. Phys. Lett. 40, L918 (2001)
Monolithic white light emitting diodes based on InGaN/GaN multiple-quantum wells
K. Moumanis, A. Helman, F. Fossard, M. Tchernycheva, A. Lusson, F. H. Julien, B. Damilano, N. Grandjean, and J. Massies
Appl. Phys. Lett. 82 (6), 868 (2003)
Intraband absorptions in GaN/AlN quantum dots in the wavelength range of 1.27-2.4 �m
B. Beaumont, P. Gibart, N. Grandjean, and J. Massies
C.R. Acad. Sci. Paris, t.1, S�rie IV, 35 (2000)
Growth of Gallium nitride epitaxial layers and applications
M. Leroux, N. Grandjean, J. Massies, B. Gil, P. Lefebvre, and P. Bigenwald
Phys. Rev. Rapid Comm B 58, R13371 (1998)
Quantum confined Stark effect due to built-in internal polarization field in (Al,Ga)N/GaN quantum wells
B. Damilano, N. Grandjean, F. Semond, J. Massies and M. Leroux
Appl. Phys. Lett. 75, 962 (1999)
From visible to white light emission by GaN quantum dots on Si(111) substrate
N. Grandjean, J. Massies, and O Tottereau
Phys. Rev. Rapid Comm. B 55, R10189 (1997)
Surface segregation in (Ga,In)As/GaAs quantum boxes
N. Grandjean and J. Massies
Phys. Rev. Rapid Comm. B 53, R13231 (1996)
Kinetics of surfactant-mediated epitaxy of III-V semiconductors
N. Grandjean, J. Massies, and M. Leroux
Phys. Rev. B 53, 998 (1996)
Monte Carlo simulation of In surface segregation during the growth of InxGa1-xAs on GaAs(001)
J. Massies and N. Grandjean
Phys. Rev. Lett. 71, 1411 (1993)
Oscillation of the lattice relaxation in layer-by-layer epitaxial growth of highly strained materials
M. Leroux, N. Grandjean, B. Chastaingt, C. Deparis, G. Neu, and J. Massies
Phys. Rev. B 45, 11846 (1992)
Confined electron states in ultrathin AlAs single quantum wells under pressure
N. Grandjean, J. Massies, and V.H. Etgens
Phys. Rev. Lett. 69, 796 (1992)
Delayed relaxation by surfactant action in highly strained III-V semiconductor epitaxial layers