Nicolas Grandjean
Full Professor
nicolas.grandjean@epfl.ch +41 21 693 34 44
Mission
Exploring quantized structures based on emerging semiconductors in both photonics and electronics. This covers a broad research area starting from fundamental studies around light-matter interaction in microcavities and nanostructures, to photonic devices such as blue lasers and light emitting diodes.
Biography
Nicolas Grandjean received a PhD degree in physics from the University of Nice Sophia Antipolis in 1994, and shortly thereafter joined the French National Center for Scientific Research (CNRS) as a permanent staff member. In 2004, he was appointed tenure-track assistant professor at the École polytechnique fédérale de Lausanne (EPFL), and promoted to full professor in 2009. After heading the Institute of Condensed Matter Physics from 2012 to 2015, Grandjean spent 2016 as a visiting professor at the University of California, Santa Barbara. He was awarded the Sandoz Family Foundation Grant for Academic Promotion, received the “Nakamura Lecturer” Award in 2010, and the "Quantum Devices Award” at the 2017 Compound Semiconductor Week. His research interests are the physics and technology of III-V nitride semiconductors.
Selected publications
| J. Levrat, R. Butt�, T. Christian, M. Glauser, E. Feltin, J.-F. Carlin, N. Grandjean, D. Read, A. V. Kavokin, Y. G. Rubo Phys. Rev. Lett. 104, 166402 (2010) |
Pinning and depinning of the Polarization of Exciton-Polariton Condensates at Room Temperature |
| R. Butt�, J. Levrat, G. Christmann, E. Feltin, J.-F. Carlin, and N. Grandjean Phys. Rev. B 80, 233301 (2009) |
Phase diagram of a polariton laser from cryogenic to room temperature |
| J. J. Baumberg, A. V. Kavokin, S. Christopoulos, A. J. D. Grundy, R. Butt�, G. Christmann, D. D. Solnyshkov, G. Malpuech, G. Baldassarri H�ger von H�gersthal, E. Feltin, J.-F. Carlin, and N. Grandjean
Phys. Rev. Lett. 101, 136409 (2008) |
Spontaneous Polarization Buildup in a Room-Temperature Polariton Laser |
| D. Simeonov, A. Dussaigne, R. Butt�, and N. Grandjean
Phys. Rev. B 77, 075306 (2008) |
Complex behavior of biexcitons in GaN quantum dots due to a giant built-in polarization field |
| A. Castiglia, E. Feltin, J. Dorsaz, G. Cosendey, J.-F. Carlin, R. Butte, and N. Grandjean
Electron. Lett., 44, 521 (2008) |
Blue laser diodes including lattice-matched Al0.83In0.17N bottom cladding layer |
| Gabriel Christmann, Rapha�l Butt�, Eric Feltin, Anas Mouti, Pierre A. Stadelmann, Antonino Castiglia, Jean-Fran�ois Carlin, and Nicolas Grandjean
Phys. Rev. B 77, 085310 (2008) |
Large vacuum Rabi splitting in a multiple quantum well GaN-based microcavity in the strong-coupling regime |
| S. Christopoulos, G. Baldassarri Hoger von Hogersthal, A. J. D. Grundy, P. G. Lagoudakis, A.V. Kavokin, and J. J. Baumberg, G. Christmann, R. Butt�, E. Feltin, J.-F. Carlin, and N. Grandjean
Phys. Rev. Lett. 98, 126405 (2007) |
Room-Temperature Polariton Lasing in Semiconductor Microcavities |
| M. Gonschorek, J.-F. Carlin, E. Feltin, M. A. Py, and N. Grandjean Appl. Phys. Lett. 89, 062106 (2006) |
High electron mobility lattice-matched AlInN/GaN field-effect transistor heterostructures |
| E. Baumann, F. R. Giorgetta, D. Hofstetter, S. Golka, W. Schrenk, G. Strasser, L. Kirste, S. Nicolay, E. Feltin, J. F. Carlin, and N. Grandjean Appl. Phys. Lett. 89, 041106 (2006) |
Near infrared absorption and room temperature photovoltaic response in AlN/GaN superlattices grown by metal-organic vapor-phase epitaxy |
| G. Christmann, R. Butt�, E. Feltin, J.-F. Carlin, and N. Grandjean
Phys. Rev. B 73, 153305 (2006) |
Impact of inhomogeneous excitonic broadening on the strong exciton-photon coupling in quantum well nitride microcavities |
| F. Natali, D. Byrne, M. Leroux, B. Damilano, F. Semond, A. Le Louarn, S. Vezian, N. Grandjean, and J. Massies Phys. Rev. B 71 (7), (2005) |
Inhomogeneous broadening of AlxGa1-xN/GaN quantum wells |
| P. Lefebvre, S. Kalliakos, T. Bretagnon, P. Valvin, T. Taliercio, B. Gil, N. Grandjean, and J. Massies Phys. Rev. B 69 (3), (2004) |
Observation and modeling of the time-dependent descreening of internal electric field in a wurtzite GaN/Al0.15Ga0.85N quantum well after high photoexcitation |
| B. Damilano, N. Grandjean, C. Pernot, and J. Massies Jpn. J Appl. Phys. Lett. 40, L918 (2001) |
Monolithic white light emitting diodes based on InGaN/GaN multiple-quantum wells |
| K. Moumanis, A. Helman, F. Fossard, M. Tchernycheva, A. Lusson, F. H. Julien, B. Damilano, N. Grandjean, and J. Massies Appl. Phys. Lett. 82 (6), 868 (2003) |
Intraband absorptions in GaN/AlN quantum dots in the wavelength range of 1.27-2.4 �m |
| B. Beaumont, P. Gibart, N. Grandjean, and J. Massies C.R. Acad. Sci. Paris, t.1, S�rie IV, 35 (2000) |
Growth of Gallium nitride epitaxial layers and applications |
| M. Leroux, N. Grandjean, J. Massies, B. Gil, P. Lefebvre, and P. Bigenwald Phys. Rev. Rapid Comm B 58, R13371 (1998) |
Quantum confined Stark effect due to built-in internal polarization field in (Al,Ga)N/GaN quantum wells |
| B. Damilano, N. Grandjean, F. Semond, J. Massies and M. Leroux Appl. Phys. Lett. 75, 962 (1999) |
From visible to white light emission by GaN quantum dots on Si(111) substrate |
| N. Grandjean, J. Massies, and O Tottereau Phys. Rev. Rapid Comm. B 55, R10189 (1997) |
Surface segregation in (Ga,In)As/GaAs quantum boxes |
| N. Grandjean and J. Massies Phys. Rev. Rapid Comm. B 53, R13231 (1996) |
Kinetics of surfactant-mediated epitaxy of III-V semiconductors |
| N. Grandjean, J. Massies, and M. Leroux Phys. Rev. B 53, 998 (1996) |
Monte Carlo simulation of In surface segregation during the growth of InxGa1-xAs on GaAs(001) |
| J. Massies and N. Grandjean Phys. Rev. Lett. 71, 1411 (1993) |
Oscillation of the lattice relaxation in layer-by-layer epitaxial growth of highly strained materials |
| M. Leroux, N. Grandjean, B. Chastaingt, C. Deparis, G. Neu, and J. Massies Phys. Rev. B 45, 11846 (1992) |
Confined electron states in ultrathin AlAs single quantum wells under pressure |
| N. Grandjean, J. Massies, and V.H. Etgens Phys. Rev. Lett. 69, 796 (1992) |
Delayed relaxation by surfactant action in highly strained III-V semiconductor epitaxial layers |
