I am a postdoctoral researcher at EPFL’s Laboratory of Semiconductor Materials, working on selective‑area epitaxy of Ge and GeSn nanowires for quantum and photonic applications. My career has developed across several international research institutions: I completed my PhD at the Center for Nanoscience and Nanotechnology (C2N) at Paris‑Saclay University, where I worked on III‑nitride nanostructured LEDs, including optical and electrical characterization and cleanroom micro‑ and nanofabrication. I later joined ISOM‑UPM in Madrid as a postdoctoral researcher, focusing on III‑nitride nanostructure epitaxy by molecular beam epitaxy. Since 2024, I have been at EPFL, specializing in MOVPE growth, advanced cleanroom fabrication, and electrical characterization. My interests center on advancing epitaxial processes, understanding nanoscale material behavior, and enabling next‑generation device architectures.