Philippe Flückiger

Nationalité: Swiss

EPFL CMI
BM 1124 (Bâtiment BM)
Station 17
1015 Lausanne

Expertise

MEMS Microelectronics MicroFabrication NanoFabrication Cleanroom Operations

Mission

Director of Operations EPFL Center of MicroNanoTechnology
Since 1999 Philippe Flückiger is the Director of Operations at the EPFL Center of MicroNanoTechnology, a world-class state-of-the-art cleanroom dedicated to research and development in the field of MEMS. He received his diploma in physics from the University of Neuchâtel, Switzerland in 1987 and his PhD from the same University in 1993. His thesis work was dedicated to the deposition, patterning and characterization of high temperature superconductor epitaxial thin films. From 1993 to 1994 he was a post doc at Stanford University to develop submicron lithography with the atomic force microscope in the group of Calvin Quate, inventor of the AFM. From 1995 to 1997 he was successively process engineer, project manager and process engineering manager at Micronas SA in Bevaix, Switzerland, a microelectronics company producing baseband processors and voltage regulators for wireless applications, mostly ASICs for Nokia Mobile Phones. In 1997 he spent 4 months in the production line of EM Microelectronic Marin SA, Switzerland, a semiconductor manufacturer specialized in the design and production of ultra low power, low voltage integrated circuits for battery-operated and field-powered applications. He joined then the Swiss Federal Institute of Technology in Lausanne (EPFL) to start the new activity in diffusion, oxidation and CVD at the Center of MicroNanoTechnology. He was appointed Director of Operations of the Center in 1999.

Bow-tie optical antenna probes for single-emitter scanning near-field optical microscopy

J. N. FarahaniH.-J. EislerD. W. PohlM. PaviusP. Flückiger  et al.

Nanotechnology. 2007. DOI : 10.1088/0957-4484/18/12/125506.

Above-IC RF MEMS devices for communication applications

R. Fritschi / M. A. IonescuP. Flückiger (Dir.)

Lausanne, EPFL, 2007. DOI : 10.5075/epfl-thesis-3778.

RF MEMS switches for mobile communications : from metal-metal to suspended-gate MOS device architectures

R. FritschiN. AbeléV. PottC. HibertP. Fluckiger  et al.

2005.

Fabrication of vertical digital silicon optical micromirrors on suspended electrode for guided-wave optical switching applications

R. GuerreC. HibertY. BurriP. FlückigerP. Renaud

Sensors and Actuators A: Physical. 2005. DOI : 10.1016/j.sna.2005.02.039.

Fabrication process and model for a MEMS parallel-plate capacitor above CPW line

J. Perruisseau-CarrierR. FritschiP. Crespo ValeroC. HibertJ.-F. Zürcher  et al.

2004. 5th workshop on MEMS for millimeterwave communication (MEMSWAVE2004), Uppsala, Sweden, June 30-July 2, 2004.

Profile angle control in SIO2 deep anisotropic dry etching for MEMS fabrication

M. PaviusC. HibertP. FlückigerP. RenaudL. Rolland  et al.

2004. 17th IEEE International Conference on Micro Electro Mechanical Systems, Maastricht, NETHERLANDS, JAN 25-29, 2004. p. 669 - 672. DOI : 10.1109/MEMS.2004.1290673.

High tuning range AlSi RF MEMS capacitors fabricated with sacrificial amorphous silicon surface micromachining

R. FritschiS. FredericoC. HibertP. FlückigerP. Renaud  et al.

Microelectronic Engineering. 2004. DOI : 10.1016/S0167-9317(04)00189-3.

High Tunning Range AISi RF MEMS Capacitors Fabricated with Sacrificial Amorphous Silicon Surface Micromachining

R. FritschiS. FrédéricoC. HibertP. FlückigerP. Renaud  et al.

2003. Micro and Nano Engineering 2003 (MNE 2003), Cambridge, UK, 22-25 September 2003. p. 447 - 451. DOI : 10.1016/j.mee.2004.03.015.

Silicon sacrificial layer dry etching (SSLDE) for free-standing RF MEMS architectures

S. FredericoC. HibertR. FritschiP. FlückigerP. Renaud  et al.

2003. 16th IEEE Annual International Conference on Micro Electro Mechanical Systems, Kyoto, Japan, 19-23 Jan. 2003. p. 570 - 573. DOI : 10.1109/MEMSYS.2003.1189813.

Fabrication process for a microfluidic valve

A. LuqueJ. QueroC. HibertP. Fluckiger

2003. p. 860 - 863. DOI : 10.1109/ISCAS.2003.1206356.

A novel RF MEMS technological platform

R. FritschiC. DehollainM. DeclercqA. M. IonescuC. Hibert  et al.

2002. 28th Annual Conference of the IEEE Industrial-Electronics-Society, Seville, Spain, Nov. 05-08, 2002. p. 3052 - 3056. DOI : 10.1109/IECON.2002.1182883.

3-D integrable optoelectronic devices for telecommunications ICs

P. DainesiA. M. IonescuL. ThévenazK. BanerjeeM. J. Declercq  et al.

2002. IEEE International Solid-State Circuits Conference (ISCC), San Francisco, CA, 3-7 Feb. 2002. p. 360 - 361. DOI : 10.1109/ISSCC.2002.993081.

Modeling and design of a low-voltage SOI suspended-gate MOSFET (SG- MOSFET) with a metal-over-gate architecture

A. M. IonescuV. PottR. FritschiK. BanerjeeM. Declercq  et al.

2002. 3rd International Symposium on Quality Electronic Design, San Jose, California, Mar 18-21, 2002. p. 496 - 501. DOI : 10.1109/ISQED.2002.996794.

Manufacture of micro-electro-mechanical-system using sacrificial layer made of silicon, useful for micro-electro-mechanical-system device architecture, e.g. radio-frequency capacitive switch and current switch

M. IONESCUP. FLUCKIGERC. HIBERTR. FRITSCHIV. POTT

US2005227428 ; AU2002322966 ; WO03078299 . 2002.

Dry Etching Techniques of Amorphous Silicon for Suspended Metal Membrane RF MEMS Capacitors

R. FritschiC. HibertP. FluckigerA. M. Ionescu

2002. MRS Spring Meeting. DOI : 10.1557/PROC-729-U2.7.

DEEP ANISOTROPIC ETCHING OF SILICON USING LOW PRESSURE HIGH DENSITY PLASMA. PRESENTATION OF COMPLEMENTARY TECHNIQUES AND THEIR APPLICATIONS IN MICROTECHNOLOGY.

C. HIBERTW. DUFOURP. FLUCKIGER

2001. ISPC 15, Orléans, France, July, 2001.

A novel CMOS SOI unbalanced Mach-Zehnder interferometer: from design and simulations to fabrication and characterization

P. DainesiL. ThévenazP. FluckigerC. HibertG. Racine  et al.

2001. IEEE International SOI Conference, 2001, Durango, CO, USA, 1-4 Oct. 2001. p. 137 - 138. DOI : 10.1109/SOIC.2001.958024.

The suspended-gate MOSFET (SG-MOSFET): A modeling outlook for the design of RF MEMS switches and tunable capacitors

V. PottA. M. IonescuR. FritschiC. HibertP. Flückiger  et al.

2001. International Semiconductor Conference, SINAIA, ROMANIA, OCT 09-13, 2001. p. 137 - 140. DOI : 10.1109/SMICND.2001.967431.

CMOS compatible fully integrated Mach-Zehnder interferometer in SOI technology

P. DainesiA. KüngM. ChablozA. LagosP. Flückiger  et al.

IEEE Photonics Technology Letters. 2000. DOI : 10.1109/68.849076.

Thermally activated vortex motion in YBa2Cu3O7 wire networks

P. FluckigerP. SrivastavaB. JeanneretC. LeemannP. Martinoli

Physica B: Condensed Matter. 1995. DOI : 10.1016/0921-4526(94)00263-U.

Atomic force microscope lithography using amorphous silicon as a resist and advances in parallel operation

S. MinneP. FlueckigerH. SohC. Quate

Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures. 1995. DOI : 10.1116/1.587857.

Fabrication of 0.1 μm metal oxide semiconductor field-effect transistors with the atomic force microscope

S. C. MinneH. T. SohP. FlueckigerC. F. Quate

Applied Physics Letters. 1995. DOI : 10.1063/1.114105.

Growth and Patterning of YBa2Cu3O7 Films

P. SrivastavaP. FlückigerC. LeemannP. Martinoli

1992. EMRS International Conference in Advanced Materials (ICAM91).

Magnetoconductance oscillations in high temperature superconducting networks

P. FluckigerV. MarsicoP. SrivastavaC. LeemannP. Martinoli

IEEE Transactions on Magnetics. 1991. DOI : 10.1109/20.133494.

Percolative behavior of the superconductive transition of YBa2Cu3O7 films

C. LeemannP. FlückigerV. MarsicoJ. L. GavilanoP. K. Srivastava  et al.

Physical Review Letters. 1990. DOI : 10.1103/PhysRevLett.64.3082.

Vortex dynamics in YBa2Cu3O7 films

P. MartinoliP. FlueckigerV. MarsicoP. SrivastavaC. Leemann  et al.

Physica B: Condensed Matter. 1990. DOI : 10.1016/S0921-4526(09)80167-1.

Penetration depth in YBaCuO films

P. FlueckigerJ.-L. GavilanoC. LeemannP. MartinoliB. Dam  et al.

Physica C: Superconductivity and its Applications. 1989. DOI : 10.1016/0921-4534(89)90823-X.

Growth of RF Magnetron Sputtered YBa2Cu3O7 Thin Films

P. SrivastavaP. DebélyH. BovingH. HintermannP. Flückiger  et al.

1989.

Critical phase fluctuations in superconducting wire networks

B. JeanneretP. FlückigerJ. L. GavilanoC. LeemannP. Martinoli

Physical Review B. 1989. DOI : 10.1103/PhysRevB.40.11374.

Complex AC conductance of YBaCuO films

P. SrivastavaP. DebelyH. HintermannC. LeemannP. Fluckiger  et al.

IEEE Transactions on Magnetics. 1989. DOI : 10.1109/20.92832.

Dynamical study of the superconducting phase transition of two-dimensional networks

B. JeanneretP. FluckigerC. LeemannP. Martinoli

IEEE Transactions on Magnetics. 1989. DOI : 10.1109/20.92564.