Jean-Michel Sallese
Nationality: Italian-Swiss
EPFL STI GR-SCI-IEL
ELB 234 (Bâtiment ELB)
Station 11
1015 Lausanne
+41 21 693 46 02
Office: ELB 234
EPFL › STI › IEM › GR-SCI-IEL
+41 21 693 46 02
EPFL › STI › STI-SEL › SEL-ENS
+41 21 693 46 02
EPFL › VPA › VPA-AVP-DLE › AVP-DLE-EDOC › EDMI-GE
Website: https://go.epfl.ch/phd-edmi
Expertise
- Modeling substrate parasitic currents in integrated circuits.
- Simulation of radiation induced soft errors in integrated circuits
- High energy particle solid-state sensors.
Mission
see https://edlab.epfl.ch/
Current work
- EPFL- HEMT model development.
- Modeling very high frequency operation in field effect devices.
see https://edlab.epfl.ch/page-102724-en-html/
EDLAB Web site
Publications (first 50)
* Anodic dissolution mechanisms of iron in bentonite slurries
npj Materials Degradation
2025
DOI : 10.1038/s41529-025-00681-9
* Design-Oriented Analytical Model for Nanowire Biosensors Including Dynamic Aspects
IEEE TRANSACTIONS ON ELECTRON DEVICES
2025
DOI : 10.1109/TED.2025.3526113
* Intrinsic Limitation of 2DEG Modulation in GaN-MISHEMT
IEEE Transactions on Electron Devices
2025
DOI : 10.1109/TED.2025.3610338
* Corrosion Behavior of Heat-Treated Fe-Based Shape Memory Alloys
Materials and Corrosion
2025
DOI : 10.1002/maco.202414562
* Field-effect transistor element and quantum computer device
2025.
* Cover Picture: Materials and Corrosion. 1/2025
Materials and Corrosion
2025
DOI : 10.1002/maco.202570011
* Nanowire junctionless ISFET noise model in Verilog-A
International Journal of Electronics Letters
2024
DOI : 10.1080/21681724.2024.2437361
* Radiation response of 28 nm CMOS transistors at high proton and neutron fluences for high energy physics applications
Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment
2024
DOI : 10.1016/j.nima.2024.169497
* Characteristics and ultra-high total ionizing dose response of 22nm fully depleted silicon-on-insulator
Journal Of Instrumentation
2024
DOI : 10.1088/1748-0221/19/03/C03039
* Simplified EPFL HEMT Model
2024. 50th IEEE European Solid-State Electronics Research Conference , Bruges, Belgium , 2024-09-09 - 2024-09-12. p. 745 - 748.DOI : 10.1109/ESSERC62670.2024.10719467.
* Non Quasi-Static Model of DG Junctionless FETs
IEEE Journal of the Electron Devices Society
2024
DOI : 10.1109/JEDS.2024.3483299
* Few-shot Learning for Efficient and Effective Machine Learning Model Adaptation
Lausanne, EPFL, 2024.DOI : 10.5075/epfl-thesis-9878.
* Reliability of Advanced Nanoscale CMOS Technology for High-Radiation Environments
Lausanne, EPFL, 2024.DOI : 10.5075/epfl-thesis-11279.
* Detachable and Portable Moisture Sensors for Industrial Applications
2024. 6 International Conference on Electrical, Control and Instrumentation Engineering , Pattaya, Thailand , 2024-11-23 - 2024-11-23.DOI : 10.1109/ICECIE63774.2024.10815640.
* Design space of quantum dot spin qubits
Physica B: Condensed Matter
2023
DOI : 10.1016/j.physb.2023.415133
* Time-resolved multi-gate ion sensitive field effect transducer and system and method of operating the same
2023.
* Fab-to-fab and run-to-run variability in 130 nm and 65 nm CMOS technologies exposed to ultra-high TID
Journal Of Instrumentation
2023
DOI : 10.1088/1748-0221/18/01/C01061
* Neutron- and Proton-Induced Degradation of MOS Transistors in 28 nm CMOS Technology (September 2023)
2023. 23 European Conference on Radiation and Its Effects on Components and Systems , Toulouse, France , 2023-09-25 - 2023-09-29.DOI : 10.1109/RADECS59069.2023.10767038.
* Low-Cost Portable Medical Device for the Detection and Quantification of Exosomes
2023. IEEE Sensors Conference , Vienna, AUSTRIA , OCT 29-NOV 01, 2023.DOI : 10.1109/SENSORS56945.2023.10325271.
* The Timepix4 analog front-end design: Lessons learnt on fundamental limits to noise and time resolution in highly segmented hybrid pixel detectors
Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment
2023
DOI : 10.1016/j.nima.2022.167489
* Tunneling Current Through a Double Quantum Dots System
Ieee Access
2022
DOI : 10.1109/ACCESS.2022.3190617
* Medipix4, a high granularity four sides buttable pixel readout chip for high resolution spectroscopic X-ray imaging at rates compatible with medical CT scans
Lausanne, EPFL, 2022.DOI : 10.5075/epfl-thesis-8617.
* Accounting for Optical Generation in the Quasi-Neutral Regions of Perovskite Solar Cells
Ieee Journal Of The Electron Devices Society
2022
DOI : 10.1109/JEDS.2022.3184397
* Design Space of Negative Capacitance in FETs
Ieee Transactions On Nanotechnology
2022
DOI : 10.1109/TNANO.2022.3174471
* Analytic modelling of passive microfluidic mixers
Mathematical Biosciences And Engineering
2022
DOI : 10.3934/mbe.2022179
* Nonhysteretic Condition in Negative Capacitance Junctionless FETs
Ieee Transactions On Electron Devices
2022
DOI : 10.1109/TED.2021.3133193
* Theoretical Studies of Nanowire Ion-Sensitive Field Effect Transistor
Journal Of Contemporary Physics-Armenian Academy Of Sciences
2021
DOI : 10.3103/S1068337221040071
* Compact Analytical Model of Nanowire Junctionless ISFET
2021. 28th International Conference on Mixed Design of Integrated Circuits and System (MIXDES) , ELECTR NETWORK , Jun 24-26, 2021. p. 31 - 34.DOI : 10.23919/MIXDES52406.2021.9497641.
* Charge-based modeling of field effect transistors, Make it easy
2021. Joint International EUROSOI Workshop / International Conference on Ultimate Integration on Silicon (EuroSOI-ULIS) , Caen, FRANCE , Sep 01-03, 2021.DOI : 10.1109/EuroSOI-ULIS53016.2021.9560680.
* A novel approach for SPICE modeling of light and radiation effects in ICs
Lausanne, EPFL, 2021.DOI : 10.5075/epfl-thesis-8422.
* Free Carrier Mobility, Series Resistance, and Threshold Voltage Extraction in Junction FETs
Ieee Transactions On Electron Devices
2020
DOI : 10.1109/TED.2020.3025841
* New architecture for the analog front-end of Medipix4
Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment
2020
DOI : 10.1016/j.nima.2020.164412
* High Precision Capacitive Moisture Sensor for Polymers: Modeling and Experiments
IEEE Sensors Journal
2020
DOI : 10.1109/JSEN.2019.2957108
* Analytical Modeling of Double-Gate and Nanowire Junctionless ISFETs
Ieee Transactions On Electron Devices
2020
DOI : 10.1109/TED.2020.2965167
* Transcapacitances in EPFL HEMT Model
Ieee Transactions On Electron Devices
2020
DOI : 10.1109/TED.2019.2958180
* A BEAM PROFILE MONITOR FOR HIGH ENERGY PROTON BEAMS USING MICROFABRICATION TECHNIQUES
2020. 9 International Beam Instrumentation Conference , Virtual, Online, Brazil , 2020-09-14 - 2020-09-18. p. 86 - 89.DOI : 10.18429/JACoW-IBIC2020-TUPP37.
* Prediction of optically-triggered amplification in phototransistor with SPICE circuit simulators
2020. Conference on Physics and Simulation of Optoelectronic Devices XXVIII , San Francisco, CA , Feb 03-06, 2020.DOI : 10.1117/12.2545771.
* Simulation of CMOS APS Operation and Crosstalk in SPICE With Generalized Devices
Ieee Journal Of The Electron Devices Society
2020
DOI : 10.1109/JEDS.2019.2956572
* A New Concept of Sensor for Ultra-high Levels of Radiation based on Radiation Enhanced Oxidation of Copper Thin-films
Lausanne, EPFL, 2020.DOI : 10.5075/epfl-thesis-7604.
* Negative Capacitance Double-Gate Junctionless FETs: A Charge-Based Modeling Investigation of Swing, Overdrive and Short Channel Effect
Ieee Journal Of The Electron Devices Society
2020
DOI : 10.1109/JEDS.2020.3020976
* Compact Model for Continuous Microfluidic Mixer
2020. 27th International Conference on Mixed Design of Integrated Circuits and System (MIXDES) , ELECTR NETWORK , Jun 25-27, 2020. p. 35 - 39.DOI : 10.23919/MIXDES49814.2020.9155997.
* Modeling Interface Charge Traps in Junctionless FETs, Including Temperature Effects
IEEE Transactions on Electron Devices
2019
DOI : 10.1109/TED.2019.2944193
* Radiation enhanced oxidation of proton-irradiated copper thin-films: Towards a new concept of ultra-high radiation dosimetry
Aip Advances
2019
DOI : 10.1063/1.5096606
* HE-LHC: The High-Energy Large Hadron Collider Future Circular Collider Conceptual Design Report Volume 4
The European Physical Journal Special Topics
2019
DOI : 10.1140/epjst/e2019-900088-6
* FCC-hh: The Hadron Collider: Future Circular Collider Conceptual Design Report Volume 3
European Physical Journal-Special Topics
2019
DOI : 10.1140/epjst/e2019-900087-0
* FCC Physics Opportunities: Future Circular Collider Conceptual Design Report Volume 1
The European Physical Journal C
2019
DOI : 10.1140/epjc/s10052-019-6904-3
* Charge-Based EPFL HEMT Model
Ieee Transactions On Electron Devices
2019
DOI : 10.1109/TED.2019.2893302
* Transient current technique for charged traps detection in silicon bonded interfaces
AIP Advances
2019
DOI : 10.1063/1.5079999
* Transadmittance Efficiency under NQS Operation in Asymmetric Double Gate FDSOI MOSFET
Ieee Transactions On Electron Devices
2019
DOI : 10.1109/TED.2018.2882539
* CJM: A Compact Model for Double-Gate Junction FETs
Ieee Journal Of The Electron Devices Society
2019
DOI : 10.1109/JEDS.2019.2944817
Research
More publications on EDLAB web page
Current Research Activities
- EPFL- HEMT model development.
- Modeling very high frequency operation in field effect devices.
see https://edlab.epfl.ch/page-102724-en-html/
Teaching & PhD
PhD Students
Marta Macaluso, Pranav Vivek Kulkarni
Past EPFL PhD Students
Luca Gautero, Fengda Sun, Frédéric Zanella, Lucian Barbut, Farzan Jazaeri, Camillo Stefanucci, Jacopo Bronuzzi, Georgi Gorine, Chiara Rossi, Viros Sriskaran, Arnout Devos, Gennaro Termo
Past EPFL PhD Students as codirector
Louis Harik, Fabrizio Lo Conte, Maria-Alexandra Paun, Anurag Mangla
Courses
Electronics
EE-280
Introduction to the main electronic components. Analysis of basic circuits made of operational amplifiers. Introduction to elementary logic circuits. Principle of Analog - Digital conversion. Basics of MOSFET transistor operation.
Electronics I
EE-202(b)
Discover the world of electronics from the fundamental laws of linear and nonlinear discrete components. Circuits obtained with component assemblies require many modeling and analysis techniques, and verification using a simulator.
Electronics II (for IC)
EE-203(b)
Understanding functionnal blocks that require a higher level of abstraction. Realization of electronic high-level functions exploiting operational amplifiers.
Modelling micro-/nano- field effect electron devices
MICRO-623
The course provides an in depth modeling of emerging field effect transistors in CMOS technologty. Starting from the basis, the course will gardually introduce essential aspects to end up with a rigorous description of key features, Nanowire FET & its application to biosensing will also be analyzed.
Physics lab IIa
PHYS-204
This practical course provides a contact with basic physical phenomena and their applications, it should help students acquire knowledge about the methods of observation and measurement as well as data analysis and presentation.