Jean-Michel Sallese

Nationality: Italian-Swiss

EPFL STI GR-SCI-IEL
ELB 234 (Bâtiment ELB)
Station 11
1015 Lausanne

Expertise

- Modeling of field effect transistors (Multigate FETs, Junctionless FET, HEMT, Field Effect-based Biosensors).
- Modeling substrate parasitic currents in integrated circuits.
- Simulation of radiation induced soft errors in integrated circuits
- High energy particle solid-state sensors.

Mission

The mission of the Electron Device Modeling and Technology group is to develop analytical and numerical models (physics based) of emerging semiconductor devices, with particular emphasis on field effect transistor architectures.
see https://edlab.epfl.ch/

Current work

- Development of Junctionless field effect biosensors.
- EPFL- HEMT model development.
- Modeling very high frequency operation in field effect devices.
see https://edlab.epfl.ch/page-102724-en-html/

EDLAB Web site

see edlab.epfl.ch for details

Publications (first 50)

Research

More publications on EDLAB web page

http://edlab.epfl.ch/page-97504-en.html

Current Research Activities

- Development of Junctionless field effect biosensors.
- EPFL- HEMT model development.
- Modeling very high frequency operation in field effect devices.
see https://edlab.epfl.ch/page-102724-en-html/