Mihai Adrian Ionescu
Nationalité: Swiss and Romanian
EPFL STI IEL NANOLAB
ELB 335 (Bâtiment ELB)
Station 11
1015 Lausanne
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+41 21 693 39 79
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Expertise
Nanoelectronic devices
Nanotechnology
Steep-slope tunnel FETs and ferroelectric FETs
Energy efficient nanoelectronics for sustainability
Qubits for Quantum Computing
Edge AI sensors
Modeling and Simulation of Solid-State Electronic Devices
Lab On Skin Technology for Digital twins
Nanotechnology
Steep-slope tunnel FETs and ferroelectric FETs
Energy efficient nanoelectronics for sustainability
Qubits for Quantum Computing
Edge AI sensors
Modeling and Simulation of Solid-State Electronic Devices
Lab On Skin Technology for Digital twins
Expertise
Nanoelectronic devices
Nanotechnology
Steep-slope tunnel FETs and ferroelectric FETs
Energy efficient nanoelectronics for sustainability
Qubits for Quantum Computing
Edge AI sensors
Modeling and Simulation of Solid-State Electronic Devices
Lab On Skin Technology for Digital twins
Nanotechnology
Steep-slope tunnel FETs and ferroelectric FETs
Energy efficient nanoelectronics for sustainability
Qubits for Quantum Computing
Edge AI sensors
Modeling and Simulation of Solid-State Electronic Devices
Lab On Skin Technology for Digital twins
Prix et distinctions
Contributions to SOI technology
1994
For contributions to the progress in engineering sciences in the domain of electronics
2009
Engineering
2013
IEEE
2017
“for leadership and contributions to the field of energy-efficient steep slope devices and technologies.â€
2024
IEEE
2023
Publications représentatives
Tunnel field-effect transistors as energy-efficient electronic switches
A.M. Ionescu, H. Riel
Published in Nature in
Nitrogen doping of vertically aligned carbon nanotubes for on-chip CMOS-compatible pseudocapacitive supercapacitors
Carbon. 2026. DOI : 10.1016/j.carbon.2025.121018.Pulsed Laser and Atomic Layer Deposition of CMOS-Compatible Vanadium Dioxide: Enabling Ultrathin Phase-Change Films
ACS Applied Electronic Materials. 2025. DOI : 10.1021/acsaelm.5c01132.CMOS-Compatible Biosensing Platform for Multiplexed Lactate and PH Monitoring in Low-Volume Biosamples
2025. 2025 23rd International Conference on Solid-State Sensors, Actuators and Microsystems (Transducers), Orlando, FL, USA, 2025-06-29 - 2025-07-03. p. 924 - 927. DOI : 10.1109/transducers61432.2025.11111474.CMOS-Compatible Antiferroelectric-Dielectric Capacitors for Multifunctional Energy Storage and Tunable Electronics
2025. 2025 23rd International Conference on Solid-State Sensors, Actuators and Microsystems (Transducers), Orlando, FL, USA, 2025-06-29 - 2025-07-03. p. 1197 - 1200. DOI : 10.1109/transducers61432.2025.11109140.An Investigation of VO2 Nanowire Arrays for Integrated Sensing. From Non-Stochastic Nanowires to Stochastic Nanostructures
2025. 2025 23rd International Conference on Solid-State Sensors, Actuators and Microsystems (Transducers), Orlando, FL, USA, 2025-06-29 - 2025-07-03. p. 494 - 497. DOI : 10.1109/transducers61432.2025.11110500.Bridging Blood and Skin: Biomarker Profiling in Dermal Interstitial Fluid (dISF) for Minimally Invasive Diagnostics
Biosensors. 2025. DOI : 10.3390/bios15050301.Integration of Cobalt Ferromagnetic Control Gates for Electrical and Magnetic Manipulation of Semiconductor Quantum Dots (Adv. Funct. Mater. 14/2025)
Advanced Functional Materials. 2025. DOI : 10.1002/adfm.202570080.Nanomole Process: Enabling Localized Metallic Back-Gates for Enhanced Cryogenic Front-to-Back Coupling in FDSOI Quantum Dots
IEEE Journal of the Electron Devices Society. 2025. DOI : 10.1109/JEDS.2025.3545661.Vanadium-Doped Hafnium Oxide: A High-Endurance Ferroelectric Thin Film with Demonstrated Negative Capacitance
NANO LETTERS. 2025. DOI : 10.1021/acs.nanolett.4c05671.Integration of Cobalt Ferromagnetic Control Gates for Electrical and Magnetic Manipulation of Semiconductor Quantum Dots
Advanced Functional Materials. 2025. DOI : 10.1002/adfm.202419940.Biomarkers in Interstitial Fluid: From Screening to Sensor Development
Lausanne, EPFL, 2025. DOI : 10.5075/epfl-thesis-11266.Wafer-Scale Demonstration of a Highly Sensitive Strain Sensor Based on Polycrystalline VO<inf>2</inf>
2025. 38th International Conference on Micro Electro Mechanical Systems, Kaohsiung, Taiwan, Province of China, 2025-01-19 - 2025-01-23. p. 635 - 638. DOI : 10.1109/MEMS61431.2025.10917570.Electron Spin Qubit Architectures on Fully Depleted Silicon-On-Insulator Substrates for Scalable Quantum Computing
Lausanne, EPFL, 2025. DOI : 10.5075/epfl-thesis-11089.Future of Computing: towards Energy Efficient Cognitive Chips
2025. International VLSI Symposium on Technology, Systems and Applications (VLSI TSA 2025), Hsinchu, Taiwan, Province of China, 2025-04-21 - 2025-04-24. DOI : 10.1109/VLSITSA64674.2025.11047135.Cryogenic Front-to-Back Coupling in FD-SOI for Tunable Qubits by Localized Metallic Back-Gate
2024. 50th IEEE European Solid-State Electronics Research Conference, Bruges, Belgium, 2024-09-09 - 2024-09-12. p. 165 - 168. DOI : 10.1109/ESSERC62670.2024.10719596.Graphene-enhanced ferroelectric domain wall high-output memristor
Applied Physics Letters. 2024. DOI : 10.1063/5.0232620.Aptamer-Decorated Graphene Channel Array with Liquid-Gating for Sensing Cortisol Stress Hormone
2024. IEEE BioSensors Conference, Cambridge, United Kingdom, 2024-07-28 - 2024-07-30. DOI : 10.1109/BioSensors61405.2024.10712663.AC-Driven Aptamer-Decorated Graphene FET for Cortisol Detection
2024. IEEE Sensors, Kobe, Japan, 2024-10-20 - 2024-10-23. DOI : 10.1109/SENSORS60989.2024.10785129.Controlled Electronic and Magnetic Landscape in Self-Assembled Complex Oxide Heterostructures
Advanced Materials. 2023. DOI : 10.1002/adma.202300200.Millimeter-wave to near-terahertz sensors based on reversible insulator-to-metal transition in VO2
Communications Materials. 2023. DOI : 10.1038/s43246-023-00350-x.Ferroelectric Junctionless Double-Gate Silicon-On-Insulator FET as a Tripartite Synapse
IEEE Electron Device Letters. 2023. DOI : 10.1109/LED.2023.3249972.Nanoscale local modification of PMMA refractive index by tip-enhanced femtosecond pulsed laser irradiation
Applied Surface Science. 2023. DOI : 10.1016/j.apsusc.2023.157014.Model-Based ISO 14971 Risk Management of EEG-Based Medical Devices
2023. 45th Annual International Conference of the IEEE Engineering in Medicine and Biology Society (EMBC), Sydney Australia, July 24-27, 2023. DOI : 10.1109/EMBC40787.2023.10340131.Metamodel for Safety Risk Management of Medical Devices Based on ISO 14971
2023. The ACM/IEEE 26th International Conference on Model-Driven Engineering Languages and Systems, Västerås, Sweden, October 1-6, 2023.Monitoring of Protein and pH Levels in Human Biofluids using FD-SOI Silicon Nanowire Arrays
Lausanne, EPFL, 2023. DOI : 10.5075/epfl-thesis-9998.Ultra-High Sensitivity Silicon Nanowire Array Biosensor Based on a Constant-Current Method for Continuous Real-Time pH and Protein Monitoring in Interstitial Fluid
2023. IEEE 49th European Solid-State Circuits Conference (ESSCIRC), Lisbon, PORTUGAL, SEP 11-14, 2023. p. 153 - 156. DOI : 10.1109/ESSCIRC59616.2023.10268731.Static and Dynamic Stochastic Analysis of a Temperature-Sensitive VO<sub>2</sub> Spiking Neuron
2023. IEEE 53rd European Solid-State Device Research Conference (ESSDERC), Lisbon, PORTUGAL, SEP 11-14, 2023. p. 81 - 84. DOI : 10.1109/ESSDERC59256.2023.10268509.Energy-Efficient Electronic Functions Based on the Co-integration of 2D and Ferroelectric Materials
Lausanne, EPFL, 2023. DOI : 10.5075/epfl-thesis-10096.Giant switchable non thermally-activated conduction in 180 degrees domain walls in tetragonal Pb(Zr,Ti)O-3
Nature Communications. 2022. DOI : 10.1038/s41467-022-34777-6.Defect-induced magnetism in homoepitaxial SrTiO3
Apl Materials. 2022. DOI : 10.1063/5.0101411.Highly Sensitive Detection of the Antidepressant Fluoxetine With an Extended Gate Field Effect Transistor
Ieee Sensors Journal. 2022. DOI : 10.1109/JSEN.2022.3161116.Negative Capacitance in HfO2 Gate Stack Structures With and Without Metal Interlayer
Ieee Transactions On Electron Devices. 2022. DOI : 10.1109/TED.2022.3157579.Label-Free C-Reactive Protein Si Nanowire FET Sensor Arrays With Super-Nernstian Back-Gate Operation
Ieee Transactions On Electron Devices. 2022. DOI : 10.1109/TED.2022.3144108.Subthreshold VO2 vertical switches for large-bandwidth millimeter-wave and sub-terahertz detection
2022. 47th International Conference on Infrared, Millimeter and Terahertz Waves (IRMMW-THz), Delft, NETHERLANDS, Aug 28-Sep 02, 2022. DOI : 10.1109/IRMMW.THz50927.2022.9895513.Spike-Based Sensing and Communication for Highly Energy-Efficient Sensor Edge Nodes
2022. 2nd IEEE International Symposium on Joint Communications and Sensing (JC and S), Seefeld, AUSTRIA, Mar 09-10, 2022. DOI : 10.1109/JCS54387.2022.9743501.Multi-Gate FD-SOI Single Electron Transistor for hybrid SET-MOSFET quantum computing
2022. 48th IEEE European Solid State Circuits Conference (ESSCIRC), Milan, ITALY, 2022-09-19 - 2022-09-22. p. 49 - 52. DOI : 10.1109/ESSCIRC55480.2022.9911479.Gate energy efficiency and negative capacitance in ferroelectric 2D/2D TFET from cryogenic to high temperatures
Npj 2D Materials And Applications. 2021. DOI : 10.1038/s41699-021-00257-6.Intrinsic switching in Si-doped HfO2: A study of Curie-Weiss law and its implications for negative capacitance field-effect transistor
Applied Physics Letters. 2021. DOI : 10.1063/5.0052129.A Wearable Low-Power Sensing Platform for Environmental and Health Monitoring: The Convergence Project
Sensors. 2021. DOI : 10.3390/s21051802.Sensitivity, Noise and Resolution in a B -Modified Foundry-Made ISFET with Miniaturized Reference Electrode for Wearable Point-of-Care Applications
Sensors. 2021. DOI : 10.3390/s21051779.A hybrid III-V tunnel FET and MOSFET technology platform integrated on silicon
Nature Electronics. 2021. DOI : 10.1038/s41928-020-00531-3.Extended gate field-effect-transistor for sensing cortisol stress hormone
Communications Materials. 2021. DOI : 10.1038/s43246-020-00114-x.An Experimental Study Of The Photoresponse Of 1T-1R Oscillators Based On Vanadium Dioxide: Towards Spiking Sensing Systems
2021. 21st International Conference on Solid-State Sensors, Actuators and Microsystems (Transducers), ELECTR NETWORK, Jun 20-25, 2021. p. 373 - 376. DOI : 10.1109/TRANSDUCERS50396.2021.9495742.Double-Gate Si Nanowire FET Sensor Arrays For Label-Free C-Reactive Protein detection enabled by antibodies fragments and pseudo-super-Nernstian back-gate operation
2021. 67th Annual IEEE International Electron Devices Meeting (IEDM 2021), San Francisco, CA, USA, December 11-15, 2021. DOI : 10.1109/IEDM19574.2021.9720670.High Tuning Range Spiking 1R-1T VO2 Voltage-Controlled Oscillator for Integrated RF and Optical Sensing
2021. IEEE 51st European Solid-State Device Research Conference (ESSDERC), ELECTR NETWORK, Sep 06-09, 2021. p. 183 - 186. DOI : 10.1109/ESSDERC53440.2021.9631804.Coupled VO2 oscillators circuit as analog first layer filter in convolutional neural networks
Frontiers In Neuroscience. 2021. DOI : 10.3389/fnins.2021.628254.Radio Frequency Temperature Transducers Based On Insulator-Metal Phase Transition In Vo2 And Ge-Doped Vo2 Ald Thin Films
2021. 21st International Conference on Solid-State Sensors, Actuators and Microsystems (Transducers), ELECTR NETWORK, Jun 20-25, 2021. p. 1355 - 1358. DOI : 10.1109/TRANSDUCERS50396.2021.9495498.Networks of Coupled VO2 Oscillators for Neuromorphic Computing
Lausanne, EPFL, 2021. DOI : 10.5075/epfl-thesis-9303.High Tuning Range Spiking 1R-1T VO2 Voltage-Controlled Oscillator for Integrated RF and Optical Sensing
2021. 47th IEEE European Solid State Circuits Conference (ESSCIRC), ELECTR NETWORK, Sep 06-09, 2021. p. 183 - 186. DOI : 10.1109/ESSCIRC53450.2021.9567761.Antibodies fragments as enablers of cardiac troponin (cTn) detection with extended gate metal-oxide-semiconductor field effect transistors (EGFET)
2020. p. 1699 - 1699.Temperature dependence of reconfigurable bandstop filters using vanadium dioxide switches
Applied Physics Letters. 2020. DOI : 10.1063/5.0021942.Intrinsic or nucleation-driven switching: An insight from nanoscopic analysis of negative capacitance Hf1-xZrxO2-based structures
Applied Physics Letters. 2020. DOI : 10.1063/5.0021272.The 3D Smith Chart: From Theory to Experimental Reality
IEEE Microwave Magazine. 2020. DOI : 10.1109/MMM.2020.3014984.3D Smith chart constant quality factor semi-circles contours for positive and negative resistance circuits
IEEE Access. 2020. DOI : 10.1109/ACCESS.2020.3026917.Corrections to “Experimental Details of a Steep-Slope Ferroelectric InGaAs Tunnel-FET With High-Quality PZT and Modeling Insights in the Transient Polarization”
Ieee Transactions On Electron Devices. 2020. DOI : 10.1109/TED.2020.2995786.Experimental Investigation of Pulsed Laser Deposition of Ferroelectric Gd:HfO2 in a CMOS BEOL Compatible Process
Acs Applied Electronic Materials. 2020. DOI : 10.1021/acsaelm.0c00319.Nanowire Tunnel FET with Simultaneously Reduced Subthermionic Subthreshold Swing and Off-Current due to Negative Capacitance and Voltage Pinning Effects
Nano Letters. 2020. DOI : 10.1021/acs.nanolett.9b05356.WSe2/SnSe2 vdW heterojunction Tunnel FET with subthermionic characteristic and MOSFET co-integrated on same WSe2 flake
Npj 2D Materials And Applications. 2020. DOI : 10.1038/s41699-020-0142-2.Subthermionic negative capacitance ion sensitive field-effect transistor
Applied Physics Letters. 2020. DOI : 10.1063/5.0005411.Radio-Frequency Characteristics of Ge-doped Vanadium Dioxide Thin Films with Increased Transition Temperature
ACS Applied Electronic Materials. 2020. DOI : 10.1021/acsaelm.0c00078.An Experimental Study on Mixed-Dimensional 1D-2D van der Waals Single-Walled Carbon Nanotube-WSe2 Hetero-Junction
IEEE Electron Device Letters. 2020. DOI : 10.1109/LED.2020.2974400.Extended Gate Field Effect Transistor Based Sensor for Detection of Trace Amounts of Anti-Depressant Drug
Ieee Access. 2020. DOI : 10.1109/ACCESS.2020.3034691.At the end of scaling: 2D materials for computing and sensing applications
Lausanne, EPFL, 2020. DOI : 10.5075/epfl-thesis-7695.Extended-Gate FET cortisol sensor for stress disorders based on aptamers-decorated graphene electrode: Fabrication, Experiments and Unified Analog Predictive Modeling
2020. IEEE International Electron Devices Meeting (IEDM), ELECTR NETWORK, Dec 12-18, 2020. DOI : 10.1109/IEDM13553.2020.9372063.Negative Capacitance Double-Gate Junctionless FETs: A Charge-Based Modeling Investigation of Swing, Overdrive and Short Channel Effect
Ieee Journal Of The Electron Devices Society. 2020. DOI : 10.1109/JEDS.2020.3020976.InAs-on-Insulator Fin Nanostructures for Integrated Computation and Sensing Functions
Lausanne, EPFL, 2020. DOI : 10.5075/epfl-thesis-7303.High-Performance III-V MOSFETs and Tunnel-FETs Integrated on Silicon
Lausanne, EPFL, 2020. DOI : 10.5075/epfl-thesis-8346.Negative capacitance semiconductor sensor
EP3671199 ; US11289601 ; EP3671199 ; US2020194592 . 2020.Sweat monitoring with CMOS compatible technology: ISFETS and beyond
Lausanne, EPFL, 2020. DOI : 10.5075/epfl-thesis-7464.Monolithically Integrated Catalyst-Free High Aspect Ratio InAs-on-Insulator (InAsOI) FinFETs for pH Sensing
Ieee Journal Of The Electron Devices Society. 2020. DOI : 10.1109/JEDS.2020.3008094.Experimental Details of a Steep-Slope Ferroelectric InGaAs Tunnel-FET With High-Quality PZT and Modeling Insights in the Transient Polarization
IEEE Transactions on Electron Devices. 2019. DOI : 10.1109/TED.2019.2954585.3D Smith charts scattering parameters frequency-dependent orientation analysis and complex-scalar multi-parameter characterization applied to Peano reconfigurable vanadium dioxide inductors
Scientific Reports. 2019. DOI : 10.1038/s41598-019-54600-5.Detection of ultra-low protein concentrations with the simplest possible field effect transistor
Nanotechnology. 2019. DOI : 10.1088/1361-6528/ab192c.Hysteresis Dynamics in Double-Gated n-Type WSe2 FETs With High-k Top Gate Dielectric
IEEE Journal of the Electron Devices Society. 2019. DOI : 10.1109/JEDS.2019.2933745.Sweat Biomarker Sensor Incorporating Picowatt, Three-Dimensional Extended Metal Gate Ion Sensitive Field Effect Transistors
ACS Sensors. 2019. DOI : 10.1021/acssensors.9b00597.Negative Capacitance as Universal Digital and Analog Performance Booster for Complementary MOS Transistors
Scientific Reports. 2019. DOI : 10.1038/s41598-019-45628-8.A Novel Reconfigurable CMOS Compatible Ka Band Bandstop Structure Using Split-Ring Resonators and Vanadium Dioxide (VO2) Phase Change Switches
2019. 2019 IEEE MTT-S International Microwave Symposium (IMS), Boston, June 7-11,2019. p. 865 - 867. DOI : 10.1109/MWSYM.2019.8701121.NanoElectronics roadmap for Europe: From nanodevices and innovative materials to system integration
Solid-State Electronics. 2019. DOI : 10.1016/j.sse.2019.03.014.Resistive Coupled VO2 Oscillators for Image Recognition
2019. 2018 IEEE International Conference on Rebooting Computing (ICRC), McLean, VA, USA, 7-9 Nov. 2018. p. 195 - 201. DOI : 10.1109/ICRC.2018.8638626.Near Hysteresis-Free Negative Capacitance InGaAs Tunnel FETs with Enhanced Digital and Analog Figures of Merit below VDD=400mV
2019. IEEE International Electron Devices Meeting (IEDM). DOI : 10.1109/IEDM.2018.8614583.Field-effect transistor device or sensor for sensing ions, molecules or biomarkers in a fluid
US2021270770 ; EP3811071 ; CN112567238 ; WO2019244113 . 2019.Wearable System for Real-Time Sensing of Biomarkers in Human Sweat
Lausanne, EPFL, 2019. DOI : 10.5075/epfl-thesis-9696.Apparatus for non-invasive sensing of biomarkers in human sweat
US11331009 ; EP3697317 ; WO2019076733 ; WO2019076733 ; US2019110722 . 2019.Exploration of Negative Capacitance Devices and Technologies
Lausanne, EPFL, 2019. DOI : 10.5075/epfl-thesis-9340.Millimeter-wave-triggering of insulator-to-metal transition in Vanadium dioxide
2019. 44th International Conference on Infrared, Millimeter, and Terahertz Waves (IRMMW-THz), Paris, FRANCE, Sep 01-06, 2019. DOI : 10.1109/IRMMW-THz.2019.8874271.Transient Negative Capacitance of Silicon-doped HfO2 in MFMIS and MFIS structures: experimental insights for hysteresis-free steep slope NC FETs
2019. 65th IEEE Annual International Electron Devices Meeting (IEDM), San Francisco, CA, Dec 09-11, 2019. DOI : 10.1109/IEDM19573.2019.8993523.Double-gate field-effect-transistor based biosensor
US11467123 ; US2020284753 ; EP3679363 ; WO2019048059 . 2019.Sensing device for sensing minor charge variations
US10818785 ; US2019172937 . 2019.VO2 oscillators coupling for Neuromorphic Computation
2019. Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon (EUROSOI-ULIS), Grenoble, FRANCE, Apr 01-03, 2019. DOI : 10.1109/EUROSOI-ULIS45800.2019.9041875.Co-integrated Subthermionic 2D/2D WSe2/SnSe2 Vertical Tunnel FET and WSe2 MOSFET on same flake: towards a 2D/2D vdW Dual-Transport Steep Slope FET
2019. 65th IEEE Annual International Electron Devices Meeting (IEDM), San Francisco, CA, Dec 09-11, 2019. DOI : 10.1109/IEDM19573.2019.8993643.Sub-Thermionic Scalable III-V Tunnel Field-Effect Transistors Integrated on Si (100)
2019. 65th IEEE Annual International Electron Devices Meeting (IEDM), San Francisco, CA, Dec 09-11, 2019. DOI : 10.1109/IEDM19573.2019.8993610.Monolithically integrated catalyst-free High Aspect Ratio InAs-On-Insulator (InAsOI) FinFETs for pH sensing
2019. 49th European Solid-State Device Research Conference (ESSDERC), Cracow, POLAND, Sep 23-26, 2019. p. 106 - 109. DOI : 10.1109/ESSDERC.2019.8901739.Capillary flow device for bio-fluid collection with semiconductor sensors
EP3510403 ; EP3510403 ; US11389096 ; US2019246959 ; EP3510403 ; US2018070869 ; WO2018047125 . 2019.Three-Dimensional Integrated Ultra-Low-Volume Passive Microfluidics with Ion-Sensitive Field-Effect Transistors for Multiparameter Wearable Sweat Analyzers
ACS Nano. 2018. DOI : 10.1021/acsnano.8b07413.Double gate n-type WSe2 FETs with high-k top gate dielectric and enhanced electrostatic control
2018. 48th European Solid-State Device Research Conference - ESSDERC 2018, 3-6 Sept. 2018, Dresden, Germany. p. 114 - 117. DOI : 10.1109/ESSDERC.2018.8486867.Gate Leakage Tunneling Impact on the InAs/GaSb Heterojunction Electron-Hole Bilayer Tunneling Field-Effect Transistor
IEEE Transactions on Electron Devices. 2018. DOI : 10.1109/TED.2018.2866123.A Review and Mathematical Treatment of Infinity on the Smith Chart, 3D Smith Chart and Hyperbolic Smith Chart
Symmetry-basel. 2018. DOI : 10.3390/sym10100458.Genuinely Ferroelectric Sub-1-Volt-Switchable Nanodomains in HfxZr(1-x)O2 Ultrathin Capacitors
ACS Applied Materials & Interfaces. 2018. DOI : 10.1021/acsami.8b07988.A Reconfigurable Inductor Based on Vanadium Dioxide Insulator-to-Metal Transition
Ieee Microwave And Wireless Components Letters. 2018. DOI : 10.1109/LMWC.2018.2854961.Steep Slope Transistors for Quantum Computing
2018. IEEE 2nd Electron Devices Technology and Manufacturing Conference - EDTM 2018, Kobe, Japan, 13-16 March 2018. p. 56 - 58. DOI : 10.1109/EDTM.2018.8421422.Low power analog frontend for ISFET sensor readout
2018. 17th International Meeting on Chemical Sensors - IMCS 2018, Vienna, Austria, 2018-07-15 - 2018-07-19. DOI : 10.5162/IMCS2018/FE.1.Design Considerations of Ferroelectric Properties for Negative Capacitance MOSFETs
2018. p. 10 - 12. DOI : 10.1109/EDTM.2018.8421443.Effect of hysteretic and non-hysteretic negative capacitance on tunnel FETs DC performance
Nanotechnology. 2018. DOI : 10.1088/1361-6528/aaa590.MoS2/VO2 vdW heterojunction devices: Tunable rectifiers, photodiodes and field effect transistors
2018. IEDM, San Francisco, California, USA, December 2-6, 2017. p. 36.1.1 - 36.1.4. DOI : 10.1109/IEDM.2017.8268503.Embedded Passive Nano-Liter Micropump For Sweat Collection And Analysis
2018. 31st IEEE International Conference on Micro Electro Mechanical Systems (MEMS), Belfast, NORTH IRELAND, Jan 21-25, 2018. p. 1217 - 1220. DOI : 10.1109/MEMSYS.2018.8346782.Prospects for energy-efficient edge computing with integrated HfO2-based ferroelectric devices
2018. 26th IFIP/IEEE International Conference on Very Large Scale Integration (VLSI-SoC), Verona, ITALY, Oct 08-10, 2018. p. 180 - 183. DOI : 10.1109/VLSI-SoC.2018.8644809.An Experimental Study of Heterostructure Tunnel FET Nanowire Arrays: Digital and Analog Figures of Merit from 300K to 10K
2018. 64th IEEE Annual International Electron Devices Meeting (IEDM), San Francisco, CA, Dec 01-05, 2018. p. 13.5.1 - 13.5.4. DOI : 10.1109/IEDM.2018.8614665.Wearable System with Integrated Passive Microfluidics for Real-Time Electrolyte Sensing in Human Sweat
Lausanne, EPFL, 2018. DOI : 10.5075/epfl-thesis-8849.Negative capacitance tunnel F£Ts: Experimental demonstration of outstanding simultaneous boosting of on-current, transconductance, overdrive, and swing
2018. 2017 Silicon Nanoelectronics Workshop, Kyoto, Japan, June 4-5, 2017. DOI : 10.23919/SNW.2017.8242270.The Future of Electronics: Silicon to Cloud Technologies
2018. 20th International Conference on Transparent Optical Networks (ICTON), Bucharest, ROMANIA, Jul 01-05, 2018. DOI : 10.1109/ICTON.2018.8473849.CMOS 3D-Extended Metal Gate ISFETs with Near Nernstian Ion Sensitivity
2018. 76th Device Research Conference (DRC), Santa Barbara, CA, Jun 24-27, 2018. DOI : 10.1109/DRC.2018.8442197.Novel Digital and Radio Frequency Electronic Functions Enabled by Steep-Slope Phase-Change Devices
Lausanne, EPFL, 2018. DOI : 10.5075/epfl-thesis-8596.Computing with Ferroelectric FETs: Devices, Models, Systems, and Applications
2018. Proceedings Of The 2018 Design, Automation & Test In Europe Conference & Exhibition (Date), Dresden, GERMANY, Mar 19-23, 2018. p. 1289 - 1298. DOI : 10.23919/DATE.2018.8342213.Tunnel fet based non-volatile memory boosted by vertical band-to-band tunneling
US2018012659 . 2018.Near Hysteresis-Free Negative Capacitance InGaAs Tunnel FETs with Enhanced Digital and Analog Figures of Merit below V-DD=400mV
2018. 64th IEEE Annual International Electron Devices Meeting (IEDM), San Francisco, CA, Dec 01-05, 2018. p. 13.4.1 - 13.4.4. DOI : 10.1109/IEDM.2018.8614583.All CMOS Integrated 3D-Extended Metal Gate ISFETs for pH and Multi-Ion (Na+, K+, Ca2+) sensing
2018. 64th IEEE Annual International Electron Devices Meeting (IEDM), San Francisco, CA, Dec 01-05, 2018. p. 12.1.1 - 12.1.4. DOI : 10.1109/IEDM.2018.8614668.Capillary flow device for bio-fluid collection with semiconductor sensors
EP3510403 ; EP3510403 ; US11389096 ; US2019246959 ; EP3510403 ; US2018070869 ; WO2018047125 . 2018.Polarity Control of Top Gated Black Phosphorous FETs by Workfunction Engineering of Pre-Patterned Au and Ag Embedded Electrodes
Ieee Journal Of The Electron Devices Society. 2018. DOI : 10.1109/JEDS.2018.2817289.Lab on skin™: 3D monolithically integrated zero-energy micro/nanofludics and FD SOI ion sensitive FETs for wearable multi-sensing sweat applications
2017. 2017 IEEE International Electron Devices Meeting - IEDM 2017, San Francisco, CA, US, December 2-6, 2017. p. 18.1.1 - 18.1.4. DOI : 10.1109/IEDM.2017.8268413.Negative Capacitance Tunnel FETs: Experimental Demonstration of Outstanding Simultaneous Boosting of On-current, Transconductance, Overdrive, and Swing
Silicon Nanoelectronic Workshop, Kyoto, Japan, June 4-5, 2017.Van der Waals MoS2/VO2 heterostructure junction with tunable rectifier behavior and efficient photoresponse
Scientific Reports. 2017. DOI : 10.1038/s41598-017-12950-y.Negative Capacitance Tunnel FETs: Experimental Demonstration of Outstanding Simultaneous Boosting of On-current, Transconductance, Overdrive, and Swing
2017. Silicon Nanoelectronic Workshop, Kyoto, Japan, June 4-5, 2017. p. 7 - 8. DOI : 10.23919/SNW.2017.8242270.Energy efficient computing and sensing in the Zettabyte era: From silicon to the cloud
2017. 2017 IEEE International Electron Devices Meeting (IEDM), San Francisco, CA, USA, 2-6 Dec, 2017. p. 1.2.1 - 1.2.8. DOI : 10.1109/IEDM.2017.8268307.Micromechanical resonators with sub-micron gaps filled with high-k dielectrics
Lausanne, EPFL, 2017. DOI : 10.5075/epfl-thesis-7938.Modeling and optimization of Tunnel-FET architectures exploiting carrier gas dimensionality
Lausanne, EPFL, 2017. DOI : 10.5075/epfl-thesis-7587.A Steep-Slope Transistor Combining Phase-Change and Band-to-Band-Tunneling to Achieve a sub-Unity Body Factor
Scientific Reports. 2017. DOI : 10.1038/s41598-017-00359-6.Negative Capacitance as Performance Booster for Tunnel FETs and MOSFETs: An Experimental Study
IEEE Electron Device Letters. 2017. DOI : 10.1109/LED.2017.2734943.Lowering motional resistance by partially HfO2 gap filling in double-ended tuning fork MEMS resonators.
2017. 2017 Joint Conference of the European Frequency and Time Forum and IEEE International Frequency Control Symposium ((EFTF/IFC), BESANÇON, France, 9-13 July 2017. p. 805 - 806. DOI : 10.1109/FCS.2017.8089040.Negative Capacitance Field Effect Transistors; Capacitance Matching and non-Hysteretic Operation
2017. Solid-State Device Research Conference (ESSDERC), 2017 47th European, Leuven, Belgium, 11-14 Sept. 2017. DOI : 10.1109/ESSDERC.2017.8066596.Low Impedance ALD HfO2 Partially-Filled-Gap Flexural and Bulk MEMS Resonators Piezoresistively Detected for Distributed Mass Sensing
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IEEE Transactions on Electron Devices. 2017. DOI : 10.1109/TED.2017.2665527.Shunt capacitive switches based on VO2 metal insulator transition for RF phase shifter applications
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2017. Solid-State Device Research Conference (ESSDERC), 2017 47th European, September, 11-14, 2017. DOI : 10.1109/ESSDERC.2017.8066602.Low-energy biomarker detection through charge-based impedance measurements
2016. 2016 IEEE SENSORS, Orlando, FL, USA, October 30th - November 3rd, 2016. DOI : 10.1109/ICSENS.2016.7808744.Vertical band-to-band tunneling based non-volatile memory with high-K gate stack and stable hysteresis characteristics up to 400K
2016. 2016 74th Annual Device Research Conference (DRC), Newark, DE, USA, 19-22 June 2016. p. 1 - 2. DOI : 10.1109/DRC.2016.7548493.Field-enhanced design of steep-slope VO2 switches for low actuation voltage
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2016. 2016 IEEE International Electron Devices Meeting (IEDM), San Francisco, CA, USA, 3-7 December 2016. p. 19.3.1 - 19.3.4. DOI : 10.1109/IEDM.2016.7838452.Solid-gap resonators based on PVDF-TrFE
2016. 2016 IEEE Silicon Nanoelectronics Workshop (SNW), Honolulu, HI, USA, 12-13 June 2016. p. 72 - 73. DOI : 10.1109/SNW.2016.7577990.Near optimal graphene terahertz non-reciprocal isolator
Nature Communications. 2016. DOI : 10.1038/ncomms11216.Enabling High Frequency Reconfigurable Functions with Graphene
Lausanne, EPFL, 2016. DOI : 10.5075/epfl-thesis-6980.Switching Behavior Constraint in the Heterogate Electron–Hole Bilayer Tunnel FET: The Combined Interplay Between Quantum Confinement Effects and Asymmetric Configurations
IEEE Transactions on Electron Devices. 2016. DOI : 10.1109/TED.2016.2556083.Underlap counterdoping as an efficient means to suppress lateral leakage in the electron–hole bilayer tunnel FET
Semiconductor Science and Technology. 2016. DOI : 10.1088/0268-1242/31/4/045001.Graphene quantum capacitors for high-Q tunable LC-tanks for RF ICs
2016. ESSDERC 2016 - 46th European Solid-State Device Research Conference, Lausanne, Switzerland, 12-15 September 2016. p. 345 - 348. DOI : 10.1109/ESSDERC.2016.7599657.Heterogeneous Integration of Low Power pH FinFET sensors with Passive Capillary Microfluidics and miniaturized Ag/AgCl quasi-Reference Electrode
2016. European Solid-State Device Research Conference (ESSDERC), Lausanne, Switzerland, September 12-15, 2016. p. 452 - 455. DOI : 10.1109/ESSDERC.2016.7599683.Sub-20nm gaps in HSQ for ultra-scaled nanoelectronic devices
42nd Micro Nano Engineering, Vienna, Austria, Septemeber 19-23,2016.Band-to-band tunneling distance analysis in the heterogate electron-hole bilayer tunnel field-effect transistor
Journal Of Applied Physics. 2016. DOI : 10.1063/1.4940741.Reconfigurable electronics based on metal-insulator transition : steep-slope switches and high frequency functions enabled by Vanadium Dioxide
Lausanne, EPFL, 2016. DOI : 10.5075/epfl-thesis-6949.Electrothermal actuation of vanadium dioxide for tunable capacitors and microwave filters with integrated microheaters
Sensors and Actuators A: Physical. 2016. DOI : 10.1016/j.sna.2016.01.027.III-V Nanowire Hetero-junction Tunnel FETs integrated on Si
Lausanne, EPFL, 2016. DOI : 10.5075/epfl-thesis-7226.Design and fabrication of high-k filled sub-100 nm gap resonators with embedded dielectric field effect transistor for ultra high frequency applications
2016. 2016 IEEE Silicon Nanoelectronics Workshop (SNW), Honolulu, HI, USA, 12-13 June 2016. p. 70 - 71. DOI : 10.1109/SNW.2016.7577989.Tri-Band, Polarization-Independent Reflectarray at Terahertz Frequencies: Design, Fabrication, and Measurement
IEEE Transactions On Terahertz Science And Technology. 2016. DOI : 10.1109/Tthz.2016.2522301.Condition for the negative capacitance effect in metal–ferroelectric–insulator–semiconductor devices
Nanotechnology. 2016. DOI : 10.1088/0957-4484/27/11/115201.Investigation of the metal-insulator transition in VO2 for Electronic Switches with Sub-1mV/Decade Steep Subthreshold Slope
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IEEE Transactions on Electron Devices. 2016. DOI : 10.1109/Ted.2016.2616035.Vertical versus lateral tunneling FET non-volatile memory cell
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2016. Smart Systems Integration, Munich, Germany, March 9-10, 2016.Graphene Quantum Capacitors for High Frequency Tunable Analog Applications
Nano Letters. 2016. DOI : 10.1021/acs.nanolett.5b05235.The Electron-Hole Bilayer TFET: Dimensionality Effects and Optimization
IEEE Transactions on Electron Devices. 2016. DOI : 10.1109/TED.2016.2557282.Quantum Mechanical Confinement in the Fin Electron-Hole Bilayer Tunnel Field-Effect Transistor
IEEE Transactions on Electron Devices. 2016. DOI : 10.1109/Ted.2016.2574893.Modeling and simulation of low power ferroelectric non-volatile memory tunnel field effect transistors using silicon-doped hafnium oxide as gate dielectric
Solid-State Electronics. 2016. DOI : 10.1016/j.sse.2016.07.025.Assessment of Confinement-Induced Band-to-Band Tunneling Leakage in the FinEHBTFET
2016. 2nd Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon (EURSOI-ULIS), TU Wien, Inst Microelectron, Vienna, AUSTRIA, JAN 25-27, 2016. p. 20 - 23. DOI : 10.1109/ULIS.2016.7440042.Single field effect transistor capacitor-less memory device and method of operating the same
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Microelectronic Engineering. 2015. DOI : 10.1016/j.mee.2015.03.005.Steep-slope Metal-Insulator-Transition VO2 Switches with Temperature-Stable High ION
IEEE Electron Device Letters. 2015. DOI : 10.1109/LED.2015.2454535.Fine Pitch 3D-TSV Based High Frequency Components for RF MEMS Applications
2015. IEEE Electronic Components and Technology Conference, San Diego, California, USA, May 26-29, 2015. p. 585 - 590. DOI : 10.1109/ECTC.2015.7159650.Impact of Asymmetric Configurations on the Heterogate Germanium Electron-Hole Bilayer Tunnel Field-Effect Transistor Including Quantum Confinement
IEEE Transactions on Electron Devices. 2015. DOI : 10.1109/TED.2015.2476350.Self-biased reconfigurable graphene stacks for terahertz plasmonics
Nature Communications. 2015. DOI : 10.1038/ncomms7334.Practical Applications of Tunnel Field Effect Transistors
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2015. 18th International Conference on Solid-State Sensors, Actuators and Microsystems Transducers 2015, Anchorage, Alaska, USA, June 21-25, 2015. p. 311 - 314. DOI : 10.1109/TRANSDUCERS.2015.7180923.Efficient quantum mechanical simulation of band-to-band tunneling
2015. 2015 Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon (EUROSOI-ULIS), Bologna, Italy, 26-28 January 2015. p. 141 - 144. DOI : 10.1109/ULIS.2015.7063793.Large area suspended graphene for nano-mechanical devices
Physica Status Solidi B-Basic Solid State Physics. 2015. DOI : 10.1002/pssb.201552269.A capacitance-voltage model for DG-TFET
2015. IEEE Silicon Nanoelectronics Workshop, Kyoto, Japan, 14-15 June 2015. p. 1 - 2.Compact modeling of DG-Tunnel FET for Verilog-A implementation
2015. ESSDERC 2015 - 45th European Solid-State Device Research Conference, Graz, Austria, 14-18 September 2015. p. 40 - 43. DOI : 10.1109/ESSDERC.2015.7324708.Tunnel Field Effect Transistors : from Steep-Slope Electronic Switches to Energy Efficient Logic Applications
Lausanne, EPFL, 2015. DOI : 10.5075/epfl-thesis-6802.Room-Temperature Negative Differential Resistance in Graphene Field Effect Transistors: Experiments and Theory
ACS Nano. 2015. DOI : 10.1021/nn5059437.Graphene RF NEMS shunt switches for analog and digital phase shifters
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IEEE Electron Device Letters. 2015. DOI : 10.1109/LED.2015.2445858.Evaluation of graphene for terahertz reflectarray antennas
2015. Graphene Week 2015, Manchester, UK, June, 22-26, 2015.Response to Comment on Assessment of field-induced quantum confinement in heterogate germanium electron-hole bilayer tunnel field-effect transistor
Applied Physics Letters. 2015. DOI : 10.1063/1.4905866.Two dimensional quantum mechanical simulation of low dimensional tunneling devices
Solid-State Electronics. 2015. DOI : 10.1016/j.sse.2015.05.030.Wafer-Level Hysteresis-Free Resonant Carbon Nanotube Transistors
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2015. Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon, Bologna, Italy, January 26-28, 2015.Graphene for Nanoelectronic Applications
Lausanne, EPFL, 2015. DOI : 10.5075/epfl-thesis-6886.Ultra Fine-Pitch TSV Technology for Ultra-Dense High-Q RF Inductors
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2015. Graphene Conference, Bilbao, Spain, March 10-13, 2015.Assessment of Pseudo-Bilayer Structures in the Heterogate Germanium Electron-Hole Bilayer Tunnel Field-Effect Transistor
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Microelectronic Engineering. 2015. DOI : 10.1016/j.mee.2015.03.055.Modeling the imaginary branch in III-V tunneling devices: Effective mass vs k.p
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Microelectronic Engineering. 2015. DOI : 10.1016/j.mee.2015.01.032.Design, Fabrication and Characterization of Terahertz Reflectarrays Based on a Silicon Substrate
2015. International Conference on Metamaterials, Photonic Crystals and Plasmonics, New York, US, August, 4-7, 2015.Carbon nanotube gas sensor array for multiplex analyte discrimination
Sensors And Actuators B-Chemical. 2015. DOI : 10.1016/j.snb.2014.10.117.Sensing with Advanced Computing Technology: Fin Field-Effect Transistors with High-k Gate Stack on Bulk Silicon
ACS Nano. 2015. DOI : 10.1021/nn5064216.CMOS-compatible abrupt switches based on VO2 metal-insulator transition
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2015. Device Research Conference (DRC), 2015 73rd Annual, Columbus, OH, USA, June 21-24, 2015. p. 267 - 268. DOI : 10.1109/DRC.2015.7175676.Performance evaluation of novel technologies for terahertz reflectarrays
2015. 2015 European Microwave Week, Paris, France, September, 6-11, 2015. p. 393 - 396. DOI : 10.1109/EuMIC.2015.7345152.Reversible supramolecular modification of surfaces
Lausanne, EPFL, 2015. DOI : 10.5075/epfl-thesis-6861.Measurement of biased graphene stacks at terahertz: dynamic reconfiguration and hysteresis
2014. 8th European Conference on Antennas and Propagation (EuCAP), The Hague, The Netherlands, April, 6-11, 2014.Single Crystal Silicon UHF Wine-Glass Ring Resonator with HfO2 Solid Dielectric Gap embedded in a Field Effect Transistor
40th Micro and Nano Engineering Conference, Lausanne, CH, September 22-26, 2014.Electromagnetic Performance of RF NEMS Graphene Capacitive Switches
IEEE Transactions on Nanotechnology. 2014. DOI : 10.1109/TNANO.2013.2290945.Component design and testing for a miniaturised autonomous sensor based on a nanowire materials platform
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Applied Physics Letters. 2014. DOI : 10.1063/1.4894088.High-K Dielectric FinFETs on Si-Bulk for Ionic and Biological Sensing Integrated Circuits
Lausanne, EPFL, 2014. DOI : 10.5075/epfl-thesis-6134.Study of Fin-Tunnel FETs with doped pocket as Capacitor-less 1T DRAM
2014. SOI-3D-Subthreshold Microelectronics Technology Unified Conference (S3S), San Francisco, California, USA, December 6-9, 2014. DOI : 10.1109/S3S.2014.7028203.Compact Modeling of Homojunction Tunnel FETs
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IEEE Journal of the Electron Devices Society. 2014. DOI : 10.1109/JEDS.2013.2295246.Partially gated lateral tunnel field effect transistor for optical applications
Applied Physics Letters. 2014. DOI : 10.1063/1.4904026.Junctionless nano-electro-mechanical resonant transistor
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2014. 72nd Device Research Conference, Santa Barbara, California, USA, June 22-25, 2014. p. 29 - 30. DOI : 10.1109/DRC.2014.6872284.Electromechanical design space exploration for electrostatically actuated ohmic switches using extended parallel plate compact model
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2014. 40th Micro and Nano Engineering, Lausanne, Switzerland, September 22-26, 2014.1T Capacitor-less DRAM cell based on asymmetric Tunnel FET design
IEEE Journal of the Electron Devices Society. 2014. DOI : 10.1109/JEDS.2014.2382759.High-yield, in-situ fabrication and integration of horizontal carbon nanotube arrays at the wafer scale for robust ammonia sensors
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CATRENE Scientific Committee Workshop 2014, Brussels, Belgium, 2014-02-04.Electrical characterization of high performance, liquid gated vertically stacked SiNW-based 3D FET biosensors
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IEEE Transactions on Electron Devices. 2014. DOI : 10.1109/TED.2014.2318199.High Performance, Vertically Stacked SiNW/Fin Based 3D FETs for Biosensing Applications
Lausanne, EPFL, 2014. DOI : 10.5075/epfl-thesis-6258.The top-down fabrication of a 3D-integrated, fully CMOS-compatible FET biosensor based on vertically stacked SiNWs and FinFETs
Sensors and Actuators B: Chemical. 2014. DOI : 10.1016/j.snb.2013.11.123.Two Dimensional Quantum Mechanical Simulation of Low Dimensional Tunneling Devices
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Lausanne, EPFL, 2014. DOI : 10.5075/epfl-thesis-6281.Investigation of Tunnel Field-Effect Transistors as a Capacitor-less Memory Cell
Applied Physics Letters. 2014. DOI : 10.1063/1.4867527.Functionalized 3D 7x20-array of vertically stacked SiNW FET for streptavidin sensing
2013. 2013 71st Annual Device Research Conference (DRC), Notre Dame, IN, USA, 23-26 06 2013. p. 1 - 2. DOI : 10.1109/DRC.2013.6633887.Innovative Tunnel Field-Effect Transistor Architectures
Lausanne, EPFL, 2013. DOI : 10.5075/epfl-thesis-5691.Gate-all-around buckled dual Si nanowire nMOSFETs on bulk Si for transport enhancement and digital logic
Microelectronic Engineering. 2013. DOI : 10.1016/j.mee.2013.02.003.Carbon Nanotube Precise Assembly for CMOS and NEMS Applications
Lausanne, EPFL, 2013. DOI : 10.5075/epfl-thesis-5651.Junctionless silicon nanowire transistors for the tunable operation of a highly sensitive, low power sensor
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2013. Annual meeting of the GDR-I GNT: Graphene and Nanotubes Science and Applications, Ecully, France, January 23-27, 2012.Tunneling and Occupancy Probabilities: How Do They Affect Tunnel-FET Behavior?
IEEE Electron Device Letters. 2013. DOI : 10.1109/LED.2013.2257665.Quantum Mechanical Study of the Germanium Electron-Hole Bilayer Tunnel FET
IEEE Transactions on Electron Devices. 2013. DOI : 10.1109/TED.2013.2274198.High-k dielectric FinFETs towards Sensing Integrated Circuits
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2013. 43rd Solid-State Device Research Conference (ESSDERC), Bucharest, Romania, September 16-20, 2013. DOI : 10.1109/ESSDERC.2013.6818875.Large-scale, in-situ integration of horizontal carbon nanotube arrays into gas sensing devices
Micronarc Alpine Meeting, 4th edition, Villars-sur-Ollon, Switzerland, January 13-15, 2013.Encapsulated Low Frequency Vibrating Body Field Effect Resonator
Lausanne, EPFL, 2013. DOI : 10.5075/epfl-thesis-5634.Mobility Extraction Assessment in GAA Si NW JL FETs with Cross-Section Down to 5 nm
2013. 14th International Conference on Ultimate Integration on Silicon (ULIS). p. 106 - 109. DOI : 10.1109/ULIS.2013.6523512.Tungsten Through Silicon Vias for 3D high quality factor embedded RF MEMS inductors
2013. 39th International Conference on Micro and Nano Engineering, London, UK, September 16-19, 2013.Nanoelectromechanical microwave switch based on graphene
2013. 2013 14th International Conference on Ultimate Integration on Silicon (ULIS), Coventry, United Kingdom, 19-21 03 2013. p. 189 - 192. DOI : 10.1109/ULIS.2013.6523516.Tunnel FET with non-uniform gate capacitance for improved device and circuit level performance
Solid-State Electronics. 2013. DOI : 10.1016/j.sse.2013.02.032.Sustained Nano-Mechanical Oscillation of a Resonant-Body Transistor by Frequency-Modulated Heterodyne Phase-Locked-Loop
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Applied Physics Letters. 2013. DOI : 10.1063/1.4821100.Ultra low power NEMFET based logic
2013. 2013 IEEE International Symposium on Circuits and Systems (ISCAS), Beijing, China, 19-23 05 2013. p. 566 - 569. DOI : 10.1109/ISCAS.2013.6571905.A study on 1T Capacitor-less Tunnel FET DRAM Exploiting Ungated Body
2013. ISDRS 2013, Washington DC, USA, December 11-13, 2013.Silicon nanowires reliability and robustness investigation using AFM-based techniques
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Lausanne, EPFL, 2013. DOI : 10.5075/epfl-thesis-5888.Nanoelectronics: Ferroelectric devices show potential
Nature Nanotechnology. 2012. DOI : 10.1038/nnano.2012.10.Large-Scale Assembly of Tunable Resonant-Body Carbon Nanotube Transistors without Hysteresis
2012. IEEE International Electron Devices Meeting IEDM, San Francisco, USA, Dec 10-13, 2012. p. 15.3.1 - 15.3.4. DOI : 10.1109/IEDM.2012.6479047.Organic half-wave rectifier fabricated by stencil lithography on flexible substrate
Microelectronic Engineering. 2012. DOI : 10.1016/j.mee.2012.07.110.Vertically stacked Si nanostructures for biosensing applications
Microelectronic Engineering. 2012. DOI : 10.1016/j.mee.2012.03.017.Accumulation-mode gate-all-around Si nanowire nMOSFETs with sub-5 nm cross-section and high uniaxial tensile strain
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IEEE Electron Device Letters. 2012. DOI : 10.1109/LED.2011.2175898.Negative Capacitance Transistor
Lausanne, EPFL, 2012. DOI : 10.5075/epfl-thesis-5276.Resonant-Body Silicon Nanowire Field Effect Transistor without Junctions
2012. 2012 IEEE International Electron Devices Meeting IEDM, San Francisco, USA, December 10-13, 2012. p. 15.2.1 - 15.2.4. DOI : 10.1109/IEDM.2012.6479046.In-situ grown horizontal carbon nanotube membranes for sensitive & selective gas sensing
LEA micro-engineering workshop, 11th edition, Arc-et-Senans, France, September 6-7, 2012.Beyond Scaling : Physics and Modeling for Pushing the Frontiers of Low-Power Devices
Lausanne, EPFL, 2012. DOI : 10.5075/epfl-thesis-5504.From All-Si Nanowire TFETs Towards III-V TFETs
Lausanne, EPFL, 2012. DOI : 10.5075/epfl-thesis-5534.Multigate Buckled Self-Aligned Dual Si Nanowire MOSFETs on Bulk Si for High Electron Mobility
IEEE Transactions on Nanotechnology. 2012. DOI : 10.1109/TNANO.2012.2205401.Precise Alignment of Individual Carbon Nanotubes for Nanoelectronics
2012. 12th IEEE International Conference on Nanotechnology (IEEE-NANO). DOI : 10.1109/NANO.2012.6322187.Non-contact characterization of graphene surface impedance at micro and millimeter waves
Journal of Applied Physics. 2012. DOI : 10.1063/1.4728183.TCAD Simulation of SOI TFETs and Calibration of Non-local Band-to-Band Tunneling Model
Microelectronic Engineering. 2012. DOI : 10.1016/j.mee.2012.07.077.RF MEMS Shunt Capacitive Switches Using AlN Compared to Si3N4 Dielectric
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IEEE Transactions on Electron Devices. 2012. DOI : 10.1109/TED.2012.2220363.On the Static and Dynamic Behavior of the Germanium Electron-Hole Bilayer Tunnel FET
IEEE Transactions on Electron Devices. 2012. DOI : 10.1109/Ted.2012.2211600.Gate-All-Around Buckled Dual Si Nanowire nMOSFETs on Bulk Si for Transport Enhancement and Digital Logic Application
2012. 38th International Conference on Micro and Nano Engineering (MNE), Toulouse, France, September 16-20, 2012.Nanomechanical Silicon Resonators with Intrinsic Tunable Gain and Sub-nW Power Consumption
ACS Nano. 2012. DOI : 10.1021/nn203517w.Multi-gate Si nanowire MOSFETs : fabrication, strain engineering and transport analysis
Lausanne, EPFL, 2012. DOI : 10.5075/epfl-thesis-5507.Study on dual-lateral-gate suspended-body single-walled carbon nanotube field-effect transistors
Solid-State Electronics. 2012. DOI : 10.1016/j.sse.2012.04.022.Determination of minimum conductivity of graphene from contactless microwaves measurements
2012. IEEE NANO 2012 - 12th International Conference on Nanotechnology, Birmingham, UK, August, 20-23, 2012. DOI : 10.1109/NANO.2012.6322060.Self-Assembled Nano-Electro-Mechanical Tri-state Carbon Nanotube Switches for Reconfigurable Integrated Circuits
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2011. 37th International Conference on Micro & Nano Engineering, Berlin, Germany, September 19-23, 2011.Uniaxially tensile strained accumulation-mode gate-all-around Si nanowire nMOSFETs
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IEEE Microwave and Wireless Components Letters. 2011. DOI : 10.1109/LMWC.2011.2162617.Guardian Angels for a Smarter Life: Enabling a Zero-Power Technological Platform for Autonomous Smart Systems
2011. 2nd European Future Technologies Conference and Exhibition (FET), Budapest, HUNGARY, May 04-06, 2011. p. 43 - 46. DOI : 10.1016/j.procs.2011.12.016.Self-Assembly of Doubly-Clamped/Cantilevered Carbon Nanotube Arrays by a Precise Positioning Method
2011. International Conference on the Science and Application of Nanotubes (NT'11), Cambridge, UK, July 11-16, 2011.Tunnel field-effect transistors as energy-efficient electronic switches
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2011. VLSI-TSA 2011, Hsinchu, Taiwan, April 25-27, 2011.Accumulation-Mode GAA Si NW nFET with sub-5 nm cross-section and high uniaxial tensile strain
2011. The 41st European Solid-State Device Research Conference (IEEE ESSDERC), Helsinki, Finland, 12-16 Sep. 2011. p. 311 - 314. DOI : 10.1109/ESSDERC.2011.6044172.In-IC Strategies for 3D Devices in Bulk Silicon
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2011. MNE 11, Berlin, Germany, Sept. 19-23, 2011.Scalable conformal array for multi-gigabit body centric wireless communication
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2011. International Semiconductor Device Research Symposium (IEEE ISDRS, biennial), University of Maryland, College Park, MD, USA, December 7-9, 2011. p. 1 - 2. DOI : 10.1109/ISDRS.2011.6135148.FinFET for high sensitivity ion and biological sensing applications
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IEEE Transactions on Electron Devices. 2011. DOI : 10.1109/TED.2011.2147786.Asymmetrically strained all-silicon multi-gate n-Tunnel FETs
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2010. MNE 2010, Genoa, Italy, September 19-22, 2011.Demonstrations of Wireless Autonomous Sensors for Aeronautical Applications
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2010. 40th European Solid-State Device Research Conference (ESSDERC)/36th European Solid-State Circuits Conference (ESSCIRC), Seville, SPAIN, Sep 14-16, 2010. p. 234 - 239. DOI : 10.1016/j.sse.2011.06.035.Nano-Electro-Mechanical Switches Based on Carbon Nanotubes Arrays
Lausanne, EPFL, 2010. DOI : 10.5075/epfl-thesis-4774.Tunable Electromechanical Resonator Based On Carbon Nanotube Array Suspended Gate Field Effect Transistor (Cnt-Sgfet)
2010. 23rd IEEE International Conference on Micro Electro Mechanical Systems (MEMS 2010), Hong Kong, PEOPLES R CHINA, Jan 24-28, 2010. p. 112 - 115. DOI : 10.1109/MEMSYS.2010.5442552.Three-level Stencil Alignment Fabrication of a High-k Gate Stack Organic Thin Film Transistor
36th International Conference on Micro & Nano Engineering (MNE), Genoa, Italy, September 19-22, 2010.3D stacked arrays of fins and nanowires on bulk silicon
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2010. 2010 IEEE International Frequency Control Symposium, New Port Beach, CA, Jun 01-04, 2010. p. 333 - 333. DOI : 10.1109/FREQ.2010.5556318.Nano-Electro-Mechanical vibrating body FET resonator for high frequency integrated oscillators
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IEEE Transactions on Electron Devices. 2010. DOI : 10.1109/TED.2010.2079531.Double-gate pentacene thin-film transistor with improved control in sub-threshold region
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2010. 40th European Solid-State Device Research Conference (ESSDERC)/36th European Solid-State Circuits Conference (ESSCIRC), Seville, SPAIN, Sep 14-16, 2010. p. 151 - 156. DOI : 10.1016/j.sse.2011.06.038.Resonant-Body Fin-FETs with sub-nW power consumption
2010. International Electron Devices Meeting (IEDM), San Francisco, CA, Dec 06-08, 2010. p. 7.6.1 - 7.6.4. DOI : 10.1109/IEDM.2010.5703318.Organic Thin Film Transistors on Flexible Polyimide Substrates Fabricated by Full Wafer Stencil Lithography
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2010. 3D System Integration Conference (3DIC), Munic, Germany, November 16-18, 2010. p. 1 - 19. DOI : 10.1109/3DIC.2010.5751423.Electrical modeling and design of a wafer-level package for MEM resonators
IEEE Transactions on Advanced Packaging. 2010. DOI : 10.1109/TADVP.2010.2043101.Active Microelectromechanical Resonator : The Vibrating Body Field Effect Transistor
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IEEE Transactions on Electron Devices. 2010. DOI : 10.1109/TED.2010.2040939.Tunable MEMS capacitors using vertical carbon nanotube arrays grown on metal lines
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Lausanne, EPFL, 2010. DOI : 10.5075/epfl-thesis-4737.Dipole antenna and distributed MEMS phase shifter fully integrated in a single wafer process for beam steering applications
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2010. Nanotech 2010, Anaheim, CA, USA.An experimental investigation of the surface potential in ferroelectric P(VDF-TrFE) FETs
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2009. 32nd International Semiconductor Conference, Sinaia, ROMANIA, Oct 12-14, 2009. p. 517 - 520. DOI : 10.1109/SMICND.2009.5336660.High-quality factor MEMS based oscillator: Silicon 9 MHz oscillator with low phase noise and high quality factor
2009. 16th International Conference Mixed Design of Integrated Circuits and Systems, Lodz, POLAND, Jun 25-27, 2009. p. 276 - 281.A Study of Deterministic Positioning of Carbon Nanotubes by Dielectrophoresis
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2009. INFOS 2009 (biennial), Cambridge, the UK, 28 June-1 July 2009.An experimental study of temperature influence on electrical characteristics of ferroelectric P(VDF-TrFE) FETs on SOI
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IEEE Electron Device Letters. 2009. DOI : 10.1109/LED.2009.2018127.Ultra-Sensitive Capacitive Detection Based on SGMOSFET Compatible With Front-End CMOS Process
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2009. 23rd Eurosensors Conference, Lausanne, SWITZERLAND, Sep 06-09, 2009. p. 1411 - 1414. DOI : 10.1016/j.proche.2009.07.352.Small signal modeling of charge and piezoresistive modulations in active MEM resonators
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2009. Joint Meeting of the 23rd European Frequency and Time Forum/IEEE International Frequency Control Symposium, Besancon, FRANCE, Apr 20-24, 2009. p. 520 - 523. DOI : 10.1109/FREQ.2009.5168235.Carbon Nanotubes Brush Varactor
2009. 10th International Symposium of RF MEMS and RF Microsystems (MEMSWAVE), Trento, Italy, July 6-8, 2009.Centre frequency and bandwidth tunable bandpass filter based on RF MEMS (10-14GHz)
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IEEE Electron Device Letters. 2008. DOI : 10.1109/LED.2008.919781.0-level Vacuum Packaging RT Process for MEMS Resonators
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IEEE Transactions on Computer-Aided Design of Integrated Circuits and Systems. 2008. DOI : 10.1109/TCAD.2008.2006076.RF MEMS capacitive switch on semi-suspended CPW using low-loss high-resistivity silicon substrate
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Lausanne, EPFL, 2008. DOI : 10.5075/epfl-thesis-4068.Abrupt NMOS Inverter Based on Punch-Through Impact Ionization With Hysteresis in the Voltage Transfer Characteristics
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2008. 9th International Symposium of RF MEMS and RF Microsystem (MEMSWAVE), Heraklion (Greece), July 1-3, 2008.Pentacene - SiO2 interface: Role of the environment prior to pentacene deposition and its impact on TFT DC characteristics
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IEEE Transactions on Electron Devices. 2008. DOI : 10.1109/TED.2007.911070.Nano-gap high quality factor thin film SOI MEM resonators
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2019. 65th IEEE Annual International Electron Devices Meeting (IEDM), San Francisco, CA, Dec 09-11, 2019. DOI : 10.1109/IEDM19573.2019.8993523.Co-integrated Subthermionic 2D/2D WSe2/SnSe2 Vertical Tunnel FET and WSe2 MOSFET on same flake: towards a 2D/2D vdW Dual-Transport Steep Slope FET
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2018. 20th International Conference on Transparent Optical Networks (ICTON), Bucharest, ROMANIA, Jul 01-05, 2018. DOI : 10.1109/ICTON.2018.8473849.CMOS 3D-Extended Metal Gate ISFETs with Near Nernstian Ion Sensitivity
2018. 76th Device Research Conference (DRC), Santa Barbara, CA, Jun 24-27, 2018. DOI : 10.1109/DRC.2018.8442197.Novel Digital and Radio Frequency Electronic Functions Enabled by Steep-Slope Phase-Change Devices
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Silicon Nanoelectronic Workshop, Kyoto, Japan, June 4-5, 2017.Van der Waals MoS2/VO2 heterostructure junction with tunable rectifier behavior and efficient photoresponse
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2017. 2017 Joint Conference of the European Frequency and Time Forum and IEEE International Frequency Control Symposium ((EFTF/IFC), BESANÇON, France, 9-13 July 2017. p. 805 - 806. DOI : 10.1109/FCS.2017.8089040.Negative Capacitance Field Effect Transistors; Capacitance Matching and non-Hysteretic Operation
2017. Solid-State Device Research Conference (ESSDERC), 2017 47th European, Leuven, Belgium, 11-14 Sept. 2017. DOI : 10.1109/ESSDERC.2017.8066596.Low Impedance ALD HfO2 Partially-Filled-Gap Flexural and Bulk MEMS Resonators Piezoresistively Detected for Distributed Mass Sensing
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Nature Communications. 2016. DOI : 10.1038/ncomms11216.Enabling High Frequency Reconfigurable Functions with Graphene
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2015. Graphene Conference, Bilbao, Spain, March 10-13, 2015.Assessment of Pseudo-Bilayer Structures in the Heterogate Germanium Electron-Hole Bilayer Tunnel Field-Effect Transistor
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2015. International Conference on Metamaterials, Photonic Crystals and Plasmonics, New York, US, August, 4-7, 2015.Carbon nanotube gas sensor array for multiplex analyte discrimination
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2015. Graphene Week 2015, Manchester, UK, June, 22-26, 2015.Response to Comment on Assessment of field-induced quantum confinement in heterogate germanium electron-hole bilayer tunnel field-effect transistor
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2014. 8th European Conference on Antennas and Propagation (EuCAP), The Hague, The Netherlands, April, 6-11, 2014.Single Crystal Silicon UHF Wine-Glass Ring Resonator with HfO2 Solid Dielectric Gap embedded in a Field Effect Transistor
40th Micro and Nano Engineering Conference, Lausanne, CH, September 22-26, 2014.Electromagnetic Performance of RF NEMS Graphene Capacitive Switches
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Applied Physics Letters. 2014. DOI : 10.1063/1.4894088.High-K Dielectric FinFETs on Si-Bulk for Ionic and Biological Sensing Integrated Circuits
Lausanne, EPFL, 2014. DOI : 10.5075/epfl-thesis-6134.Study of Fin-Tunnel FETs with doped pocket as Capacitor-less 1T DRAM
2014. SOI-3D-Subthreshold Microelectronics Technology Unified Conference (S3S), San Francisco, California, USA, December 6-9, 2014. DOI : 10.1109/S3S.2014.7028203.Junctionless Silicon Nanowire Resonator
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Applied Physics Letters. 2014. DOI : 10.1063/1.4904026.Junctionless nano-electro-mechanical resonant transistor
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2014. 72nd Device Research Conference, Santa Barbara, California, USA, June 22-25, 2014. p. 29 - 30. DOI : 10.1109/DRC.2014.6872284.Growth optimization of vanadium dioxide films on SiO2/Si substrates
2014. 40th Micro and Nano Engineering, Lausanne, Switzerland, September 22-26, 2014.1T Capacitor-less DRAM cell based on asymmetric Tunnel FET design
IEEE Journal of the Electron Devices Society. 2014. DOI : 10.1109/JEDS.2014.2382759.High-yield, in-situ fabrication and integration of horizontal carbon nanotube arrays at the wafer scale for robust ammonia sensors
Carbon. 2014. DOI : 10.1016/j.carbon.2014.07.009.Wearable Sensors for medical applications
CATRENE Scientific Committee Workshop 2014, Brussels, Belgium, 2014-02-04.Electrical characterization of high performance, liquid gated vertically stacked SiNW-based 3D FET biosensors
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IEEE Transactions on Electron Devices. 2014. DOI : 10.1109/TED.2014.2318199.The top-down fabrication of a 3D-integrated, fully CMOS-compatible FET biosensor based on vertically stacked SiNWs and FinFETs
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2014. 15th International Conference on Ultimate Integration on Silicon (ULIS), Stockholm ,Sweden, April 7-9, 2014. p. 85 - 88. DOI : 10.1109/ULIS.2014.6813922.Innovative Tunnel Field-Effect Transistor Architectures
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Microelectronic Engineering. 2013. DOI : 10.1016/j.mee.2013.02.003.Carbon Nanotube Precise Assembly for CMOS and NEMS Applications
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2013. Annual meeting of the GDR-I GNT: Graphene and Nanotubes Science and Applications, Ecully, France, January 23-27, 2012.Tunneling and Occupancy Probabilities: How Do They Affect Tunnel-FET Behavior?
IEEE Electron Device Letters. 2013. DOI : 10.1109/LED.2013.2257665.Quantum Mechanical Study of the Germanium Electron-Hole Bilayer Tunnel FET
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2013. 43rd Solid-State Device Research Conference (ESSDERC), Bucharest, Romania, September 16-20, 2013. DOI : 10.1109/ESSDERC.2013.6818875.Large-scale, in-situ integration of horizontal carbon nanotube arrays into gas sensing devices
Micronarc Alpine Meeting, 4th edition, Villars-sur-Ollon, Switzerland, January 13-15, 2013.Encapsulated Low Frequency Vibrating Body Field Effect Resonator
Lausanne, EPFL, 2013. DOI : 10.5075/epfl-thesis-5634.Mobility Extraction Assessment in GAA Si NW JL FETs with Cross-Section Down to 5 nm
2013. 14th International Conference on Ultimate Integration on Silicon (ULIS). p. 106 - 109. DOI : 10.1109/ULIS.2013.6523512.Tungsten Through Silicon Vias for 3D high quality factor embedded RF MEMS inductors
2013. 39th International Conference on Micro and Nano Engineering, London, UK, September 16-19, 2013.Nanoelectromechanical microwave switch based on graphene
2013. 2013 14th International Conference on Ultimate Integration on Silicon (ULIS), Coventry, United Kingdom, 19-21 03 2013. p. 189 - 192. DOI : 10.1109/ULIS.2013.6523516.Tunnel FET with non-uniform gate capacitance for improved device and circuit level performance
Solid-State Electronics. 2013. DOI : 10.1016/j.sse.2013.02.032.Sustained Nano-Mechanical Oscillation of a Resonant-Body Transistor by Frequency-Modulated Heterodyne Phase-Locked-Loop
2013. 2013 Symposia on VLSI Technology and Circuits (2013 Silicon Nanoelectronics Workshop), Kyoto, Japan, June 9-14, 2013.Ferroelectric tunnel fet switch and memory
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2013. 2013 71st Annual Device Research Conference (DRC), Notre Dame, IN, USA, 23-26 06 2013. p. 1 - 2. DOI : 10.1109/DRC.2013.6633887.Silicon nanowires reliability and robustness investigation using AFM-based techniques
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Applied Physics Letters. 2013. DOI : 10.1063/1.4821100.A study on 1T Capacitor-less Tunnel FET DRAM Exploiting Ungated Body
2013. ISDRS 2013, Washington DC, USA, December 11-13, 2013.Towards Nanomechanics and Nanoelectronics on a Single Chip
Lausanne, EPFL, 2013. DOI : 10.5075/epfl-thesis-5888.FinFET integrated low-power circuits for enhanced sensing applications
Sensors and Actuators B: Chemical. 2013. DOI : 10.1016/j.snb.2013.06.031.Ultra low power NEMFET based logic
2013. 2013 IEEE International Symposium on Circuits and Systems (ISCAS), Beijing, China, 19-23 05 2013. p. 566 - 569. DOI : 10.1109/ISCAS.2013.6571905.Nanoelectronics: Ferroelectric devices show potential
Nature Nanotechnology. 2012. DOI : 10.1038/nnano.2012.10.Large-Scale Assembly of Tunable Resonant-Body Carbon Nanotube Transistors without Hysteresis
2012. IEEE International Electron Devices Meeting IEDM, San Francisco, USA, Dec 10-13, 2012. p. 15.3.1 - 15.3.4. DOI : 10.1109/IEDM.2012.6479047.Vertically stacked Si nanostructures for biosensing applications
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IEEE Electron Device Letters. 2012. DOI : 10.1109/LED.2011.2175898.Negative Capacitance Transistor
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2012. 2012 IEEE International Electron Devices Meeting IEDM, San Francisco, USA, December 10-13, 2012. p. 15.2.1 - 15.2.4. DOI : 10.1109/IEDM.2012.6479046.In-situ grown horizontal carbon nanotube membranes for sensitive & selective gas sensing
LEA micro-engineering workshop, 11th edition, Arc-et-Senans, France, September 6-7, 2012.Beyond Scaling : Physics and Modeling for Pushing the Frontiers of Low-Power Devices
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IEEE Transactions on Nanotechnology. 2012. DOI : 10.1109/TNANO.2012.2205401.Precise Alignment of Individual Carbon Nanotubes for Nanoelectronics
2012. 12th IEEE International Conference on Nanotechnology (IEEE-NANO). DOI : 10.1109/NANO.2012.6322187.TCAD Simulation of SOI TFETs and Calibration of Non-local Band-to-Band Tunneling Model
Microelectronic Engineering. 2012. DOI : 10.1016/j.mee.2012.07.077.RF MEMS Shunt Capacitive Switches Using AlN Compared to Si3N4 Dielectric
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2012. 38th International Conference on Micro and Nano Engineering (MNE), Toulouse, France, September 16-20, 2012.Multi-gate Si nanowire MOSFETs : fabrication, strain engineering and transport analysis
Lausanne, EPFL, 2012. DOI : 10.5075/epfl-thesis-5507.Study on dual-lateral-gate suspended-body single-walled carbon nanotube field-effect transistors
Solid-State Electronics. 2012. DOI : 10.1016/j.sse.2012.04.022.Determination of minimum conductivity of graphene from contactless microwaves measurements
2012. IEEE NANO 2012 - 12th International Conference on Nanotechnology, Birmingham, UK, August, 20-23, 2012. DOI : 10.1109/NANO.2012.6322060.Self-Assembled Nano-Electro-Mechanical Tri-state Carbon Nanotube Switches for Reconfigurable Integrated Circuits
2012. IEEE MEMS 2012, Paris, Jan. 29-Feb. 2, 2012. p. 188 - 191. DOI : 10.1109/MEMSYS.2012.6170148.Tunnel FET with non-uniform gate capacitance for improved device and circuit level performance
2012. ESSDERC 2012 - 42nd European Solid State Device Research Conference, Bordeaux, France, 17-21 09 2012. p. 161 - 164. DOI : 10.1109/ESSDERC.2012.6343358.The electron–hole bilayer tunnel FET
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2012. 42nd European Microwave Conference, Amsterdam, Netherlands. p. 822 - 825.Single Active Nanoelectromechanical Tuning Fork Front-End Radio-Frequency Receiver
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2012. 70th Device Research Conference, State College, PA, USA, June 18-20, 2012. p. 131 - 132. DOI : 10.1109/DRC.2012.6256999.Local volume depletion/accumulation in GAA Si nanowire junctionless nMOSFETs
IEEE Transactions on Electron Devices. 2012. DOI : 10.1109/TED.2012.2220363.Tunneling path impact on semi-classical numerical simulations of TFET devices
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Radioengineering. 2011.A tunneling field-effect transistor exploiting internally combined band-to-band and barrier tunneling mechanisms
Applied Physics Letters. 2011. DOI : 10.1063/1.3569760.Lateral Gate Suspended-Body Carbon Nanotube Field-Effect-Transistors with Sub-100nm Air Gap by Precise Positioning Method
2011. Device Research Conference (DRC 2011), Santa Barbara, USA, June 20-22, 2011.Carbon Nanotube Crossed Junction by Two Step Dielectrophoresis
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Microelectronic Engineering. 2011. DOI : 10.1016/j.mee.2011.02.030.Uniaxially tensile strained accumulation-mode gate-all-around Si nanowire nMOSFETs
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IEEE Microwave and Wireless Components Letters. 2011. DOI : 10.1109/LMWC.2011.2162617.Guardian Angels for a Smarter Life: Enabling a Zero-Power Technological Platform for Autonomous Smart Systems
2011. 2nd European Future Technologies Conference and Exhibition (FET), Budapest, HUNGARY, May 04-06, 2011. p. 43 - 46. DOI : 10.1016/j.procs.2011.12.016.Tunnel field-effect transistors as energy-efficient electronic switches
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2011. VLSI-TSA 2011, Hsinchu, Taiwan, April 25-27, 2011.Accumulation-Mode GAA Si NW nFET with sub-5 nm cross-section and high uniaxial tensile strain
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2011. MNE 11, Berlin, Germany, Sept. 19-23, 2011.Scalable conformal array for multi-gigabit body centric wireless communication
2011. 5th International Symposium on Medical Information & Communication Technology (ISMICT), 2011, Montreux, Switzerland, March 27-30, 2011. p. 74 - 78. DOI : 10.1109/ISMICT.2011.5759800.Local stressors to accommodate 1.2 to 5.6 GPa uniaxial tensile stress in suspended gate-all-around Si nanowire nMOSFETs by elastic local buckling
2011. International Semiconductor Device Research Symposium (IEEE ISDRS, biennial), University of Maryland, College Park, MD, USA, December 7-9, 2011. p. 1 - 2. DOI : 10.1109/ISDRS.2011.6135148.The Vibrating Body Transistor
IEEE Transactions on Electron Devices. 2011. DOI : 10.1109/TED.2011.2147786.Tunnel-FET architecture with improved performance due to enhanced gate modulation of the tunneling barrier
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2011. 37th International Conference on Micro & Nano Engineering, Berlin, Germany, September 19-23, 2011.Integration for All Configurations
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2011. International Conference on the Science and Application of Nanotubes (NT'11), Cambridge, UK, July 11-16, 2011.RF-MEMS switches with AlN dielectric and their applications
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2010. MNE 2010, Genoa, Italy, September 19-22, 2011.Demonstrations of Wireless Autonomous Sensors for Aeronautical Applications
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2010. 23rd IEEE International Conference on Micro Electro Mechanical Systems (MEMS 2010), Hong Kong, PEOPLES R CHINA, Jan 24-28, 2010. p. 112 - 115. DOI : 10.1109/MEMSYS.2010.5442552.Three-level Stencil Alignment Fabrication of a High-k Gate Stack Organic Thin Film Transistor
36th International Conference on Micro & Nano Engineering (MNE), Genoa, Italy, September 19-22, 2010.3D stacked arrays of fins and nanowires on bulk silicon
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2010. 2010 IEEE International Frequency Control Symposium, New Port Beach, CA, Jun 01-04, 2010. p. 333 - 333. DOI : 10.1109/FREQ.2010.5556318.Nano-Electro-Mechanical vibrating body FET resonator for high frequency integrated oscillators
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IEEE Transactions on Electron Devices. 2010. DOI : 10.1109/TED.2010.2079531.Double-gate pentacene thin-film transistor with improved control in sub-threshold region
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2010. 40th European Solid-State Device Research Conference (ESSDERC)/36th European Solid-State Circuits Conference (ESSCIRC), Seville, SPAIN, Sep 14-16, 2010. p. 151 - 156. DOI : 10.1016/j.sse.2011.06.038.Resonant-Body Fin-FETs with sub-nW power consumption
2010. International Electron Devices Meeting (IEDM), San Francisco, CA, Dec 06-08, 2010. p. 7.6.1 - 7.6.4. DOI : 10.1109/IEDM.2010.5703318.Organic Thin Film Transistors on Flexible Polyimide Substrates Fabricated by Full Wafer Stencil Lithography
Sensors and Actuators A: Physical. 2010. DOI : 10.1016/j.sna.2010.04.016.Metal-Ferroelectric-Metal-Oxide-Semiconductor Field Effect Transistor with Sub-60mV/decade Subthreshold Swing and Internal Voltage Amplification
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Nature Nanotechnology. 2010. DOI : 10.1038/nnano.2010.38.Carbon Nanotube Electromechanical Devices for Radio Frequency Applications
Lausanne, EPFL, 2010. DOI : 10.5075/epfl-thesis-4800.The high-mobility bended n-channel silicon nanowire transistor
IEEE Transactions on Electron Devices. 2010. DOI : 10.1109/TED.2010.2040939.Tunable MEMS capacitors using vertical carbon nanotube arrays grown on metal lines
Nanotechnology. 2010. DOI : 10.1088/0957-4484/22/2/025203.RF MEMS Switches for Wide-band (5 - 40 GHz), Tuneable Filters and DMTL Phase Shifters
Lausanne, EPFL, 2010. DOI : 10.5075/epfl-thesis-4737.Dipole antenna and distributed MEMS phase shifter fully integrated in a single wafer process for beam steering applications
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2010. Nanotech 2010, Anaheim, CA, USA.An experimental investigation of the surface potential in ferroelectric P(VDF-TrFE) FETs
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Lausanne, EPFL, 2010. DOI : 10.5075/epfl-thesis-4729.RF NEM capacitive switch based on dense horizontal arrays of CNTs
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Applied Physics Letters. 2010. DOI : 10.1063/1.3467471.Carbon nanotube vertical membranes for electrostatically actuated micro-electro-mechanical devices
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Microelectronic Engineering. 2010. DOI : 10.1016/j.mee.2009.11.024.Active Microelectromechanical Resonator : The Vibrating Body Field Effect Transistor
Lausanne, EPFL, 2010. DOI : 10.5075/epfl-thesis-4673.Tunable band-stop filter based on single RF MEMS capacitive shunt switch with meander arm inductance
Solid-State Electronics. 2010. DOI : 10.1016/j.sse.2010.04.030.Electrical modeling and design of a wafer-level package for MEM resonators
IEEE Transactions on Advanced Packaging. 2010. DOI : 10.1109/TADVP.2010.2043101.Heterogeneous Integration for Novel Functionality
2010. 3D System Integration Conference (3DIC), Munic, Germany, November 16-18, 2010. p. 1 - 19. DOI : 10.1109/3DIC.2010.5751423.Ad-Hoc Wireless Sensor Networks For Exploration Of Solar-System Bodies
Acta Astronautica. 2009. DOI : 10.1016/j.actaastro.2008.11.012.A study of polarization effects in metal-ferroelectric-oxide-semiconductor capacitors
2009. 32nd International Semiconductor Conference, Sinaia, ROMANIA, Oct 12-14, 2009. p. 517 - 520. DOI : 10.1109/SMICND.2009.5336660.High-quality factor MEMS based oscillator: Silicon 9 MHz oscillator with low phase noise and high quality factor
2009. 16th International Conference Mixed Design of Integrated Circuits and Systems, Lodz, POLAND, Jun 25-27, 2009. p. 276 - 281.Investigation of oxidation-induced strain in a top-down Si nanowire platform
2009. INFOS 2009 (biennial), Cambridge, the UK, 28 June-1 July 2009.An experimental study of temperature influence on electrical characteristics of ferroelectric P(VDF-TrFE) FETs on SOI
2009. 2009 Proceedings of the European Solid State Device Research Conference (ESSDERC), Athens, Greece, 14-18 09 2009. p. 97 - 100. DOI : 10.1109/ESSDERC.2009.5331330.Retention in nonvolatile silicon transistors with an organic ferroelectric gate
Applied Physics Letters. 2009. DOI : 10.1063/1.3158959.Asymmetrically strained all-silicon Tunnel FETs featuring 1V operation
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IEEE Electron Device Letters. 2009. DOI : 10.1109/LED.2009.2018127.Ultra-Sensitive Capacitive Detection Based on SGMOSFET Compatible With Front-End CMOS Process
IEEE Journal of Solid-State Circuits. 2009. DOI : 10.1109/JSSC.2008.2007448.MEMS technology for Radar front end modules.
2009. International Radar Conference - Surveillance for a Safer World, 2009. RADAR, October 12-16, 2009.Micro-Electro-Mechanical Switch Based on Suspended Horizontal Dense Mat of CNTs by FIB Nanomanipulation
2009. 23rd Eurosensors Conference, Lausanne, SWITZERLAND, Sep 06-09, 2009. p. 1411 - 1414. DOI : 10.1016/j.proche.2009.07.352.Small signal modeling of charge and piezoresistive modulations in active MEM resonators
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Lausanne, EPFL, 2009. DOI : 10.5075/epfl-thesis-4484.Reliability of rf mems capacitive switches and distributed mems phase shifters using aln dielectric
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Microelectronic Engineering. 2009. DOI : 10.1016/j.mee.2009.03.086.Optimization of the channel lateral strain profile for improved performance of multi-gate MOSFETs
2009. International Symposium on VLSI Technology, Systems and Applications, Hsinchu, TAIWAN, Apr 27-29, 2009. p. 119 - 120. DOI : 10.1109/VTSA.2009.5159319.Sub-100μW low power operation of vibrating body FETs
2009. International Symposium on VLSI Technology, Systems and Applications, Hsinchu, TAIWAN, Apr 27-29, 2009. p. 129 - 130. DOI : 10.1109/VTSA.2009.5159324.Silicon nanowires with lateral uniaxial tensile stress profiles for high electron mobility gate-all-around MOSFETs
2009. MNE 2009, Ghent, Belgium, 28 Sep.-1 Oct. 2009.Bulk Lateral MEM Resonator on Thin SOI With High Q-Factor
Journal of Microelectromechanical Systems. 2009. DOI : 10.1109/JMEMS.2008.2011689.Microelectromechanical Metal-Air-Insulator-Semiconductor (MEM-MAIS) Diode: A Novel Hybrid Device for ESD Protection
2009. 2009 IEEE 22nd International Conference on Micro Electro Mechanical Systems (MEMS), Sorrento, Italy, 25-29 01 2009. p. 132 - 135. DOI : 10.1109/MEMSYS.2009.4805336.9 MHz vibrating body FET tuning fork oscillator
2009. Joint Meeting of the 23rd European Frequency and Time Forum/IEEE International Frequency Control Symposium, Besancon, FRANCE, Apr 20-24, 2009. p. 520 - 523. DOI : 10.1109/FREQ.2009.5168235.Centre frequency and bandwidth tunable bandpass filter based on RF MEMS (10-14GHz)
2009. 37th European Microwave Conference, Rome, ITALY, Sep 29-Oct 01, 2009. DOI : 10.23919/EUMC.2009.5296302.A Study of Deterministic Positioning of Carbon Nanotubes by Dielectrophoresis
Journal of Electronic Materials. 2009. DOI : 10.1007/s11664-009-0797-0.Investigation of bias-dependent series resistances and barrier height in Double Gate Schottky MOSFETs
2009. IEEE International SOI Conference 2009, Foster City, CA, Oct 05-08, 2009. p. 131 - 132. DOI : 10.1109/SOI.2009.5318738.Carbon Nanotubes Brush Varactor
2009. 10th International Symposium of RF MEMS and RF Microsystems (MEMSWAVE), Trento, Italy, July 6-8, 2009.Double-Gate Pentacene TFTs with Improved Control in Subthreshold Region
2009. 39th European Solid-State Device Research Conference (ESSDERC), Athens, Greece, September 14-18, 2009. p. 205 - 208. DOI : 10.1109/ESSDERC.2009.5331352.Highly Tunable Band-Stop Filters Based on AIN RF MEM Capacitive Switches with Inductive Arms and Zipping Capacitive Coupling
2009. IEEE International Electron Devices Meeting (IEDM 2009), Baltimore, MD, Dec 07-09, 2009. p. 753 - 756. DOI : 10.1109/IEDM.2009.5424217.Tunable band-stop filter based on single RF MEMS capacitive shunt switch with meander arm inductance
2009. 39th European Solid-State Device Research Conference (ESSDERC), Athens, Greece, September 15-19, 2009. p. 331 - 334. DOI : 10.1109/ESSDERC.2009.5331304.SWCNT/MWCNT Crossed Junction by Two-Step Dielectrophoresis
2008.Nanoscale strain characterisation for ultimate CMOS and beyond
2008. International Symposium on Beyond Silicon Technology held at the 2008 EMRS Spring Meeting, Strasbourg, FRANCE, May 26-30, 2008. p. 271 - 278. DOI : 10.1016/j.mssp.2009.06.003.Laterally vibrating-body double gate MOSFET with improved signal detection
2008. p. 155 - 156. DOI : 10.1109/DRC.2008.4800781.Impact of Lateral Nonuniform Doping and Hot Carrier Injection on Capacitance Behavior of High Voltage MOSFETs
Iete Technical Review. 2008. DOI : 10.4103/0256-4602.44655.0-level Vacuum Packaging RT Process for MEMS Resonators
2008.Compact Modeling of Suspended Gate FET
2008. p. 119 - 124. DOI : 10.1109/VLSI.2008.11.RF MEMS capacitive switch on semi-suspended CPW using low-loss high-resistivity silicon substrate
Microelectronic Engineering. 2008. DOI : 10.1016/j.mee.2008.01.093.Hysteretic inverter-on-a-body-tied-wire based on less-than-10mV/decade abrupt punch-through impact ionization MOS (PIMOS) switch
2008. p. 22 - 23. DOI : 10.1109/VTSA.2008.4530780.Fabrication and Characterization of Gate-All-Around Silicon Nanowires on Bulk Silicon
IEEE Transactions on Nanotechnology. 2008. DOI : 10.1109/TNANO.2008.2007215.Oscillator Based on Suspended Gate MOS Transistors
Romanian Journal Of Information Science And Technology. 2008.Demonstration of subthrehold swing smaller than 60mV/decade in Fe-FET with P(VDF-TrFE)/SiO₂ gate stack
2008. p. 1 - 4. DOI : 10.1109/IEDM.2008.4796642.A new definition of threshold voltage in Tunnel FETs
Solid-State Electronics. 2008. DOI : 10.1016/j.sse.2008.04.003.Impact of lateral non-uniform doping and hot carrier degradation on capacitance behavior of high voltage MOSFETs
2008. 37th European Solid-State Device Research Conference, Munich, GERMANY, Sep 11-13, 2007. p. 426 - 429. DOI : 10.1109/ESSDERC.2007.4430969.Abrupt NMOS Inverter Based on Punch-Through Impact Ionization With Hysteresis in the Voltage Transfer Characteristics
IEEE Electron Device Letters. 2008. DOI : 10.1109/LED.2008.2001632.1T Memory Cell Based on PVDF-TrFE Field Effect Transistor
2008. Material Research Society Spring meeting 2008, MRS 2008. p. 1067 - B03. DOI : 10.1557/PROC-1067-B03-02.High-Isolation Shunt-Series MEMS Switch for a Wide Frequency Range (6-40GHz)
2008. 9th International Symposium of RF MEMS and RF Microsystem (MEMSWAVE), Heraklion (Greece), July 1-3, 2008.Pentacene - SiO2 interface: Role of the environment prior to pentacene deposition and its impact on TFT DC characteristics
2008. 26th International Conference on Microelectronics (MIEL 2008), Nis, Serbia, May 11-14, 2008. DOI : 10.1109/ICMEL.2008.4559282.Non-hysteretic punchthrough impact ionization MOS (PIMOS) transistor: Application to abrupt inverter and NDR circuits
2008. p. 310 - 313. DOI : 10.1109/ESSDERC.2008.4681760.Prospects for logic-on-a-wire
Microelectronic Engineering. 2008. DOI : 10.1016/j.mee.2008.01.022.Oxide charging and memory effects in suspended-gate FET
2008. p. 685 - 688. DOI : 10.1109/MEMSYS.2008.4443749.Fabrication of MEMS Resonators in Thin SOI
2008.Micro-Electro-Mechanical Metal-Air-Insulator-Semiconductor Diode Switch
2008. 34th International Conference on Micro- and Nano-Engineering, Athens, GREECE, Sep 15-18, 2008. p. 1074 - 1077. DOI : 10.1016/j.mee.2009.02.007.DRAM Based on Hysteresis in Impact Ionization Single-Transistor-Latch
2008.Focussed ion beam based fabrication of micro-electro-mechanical resonators
Microsystem Technologies. 2008. DOI : 10.1007/s00542-007-0464-4.Study of n- and p-type dopants activation and dopants behavior with respect to annealing conditions in silicon germanium-on-insulator (SGOI)
Materials Science and Engineering: B. 2008. DOI : 10.1016/j.mseb.2008.10.023.Analytical Modeling of the Suspended-Gate FET and Design Insights for Low-Power Logic
IEEE Transactions on Electron Devices. 2008. DOI : 10.1109/TED.2007.911070.Nano-gap high quality factor thin film SOI MEM resonators
2008.Editorial
Microelectronics Journal. 2008. DOI : 10.1016/j.mejo.2007.05.002.3D Nanostructured Silicon Relying on Hard Mask Engineering for High Temperature Annealing (HME-HTA) Processes for Electronic Devices
2008.Nano-gap micro-electro-mechanical bulk lateral resonators with high quality factors and low motional resistances on thin silicon-on-insulator
Solid-State Electronics. 2008. DOI : 10.1016/j.sse.2008.04.022.NANOSIL network of excellence--silicon-based nanostructures and nanodevices for long-term nanoelectronics applications
Materials Science in Semiconductor Processing. 2008. DOI : 10.1016/j.mssp.2008.09.017.Investigation of Strain Profile Optimization in Gate-All-Around Suspended Silicon Nanowire FET
2008. IEEE ESSDERC 2008, Edinburgh, Scotland, Sep. 15-19, 2008.New functionality and ultra low power: key opportunities for post-CMOS era
2008. International Symposium on VLSI Technology, Systems and Applications, Hsinchu, TAIWAN, Apr 21-23, 2008. p. 72 - 73. DOI : 10.1109/VTSA.2008.4530804.Multi-gate vibrating-body field effect transistor (VB-FETs)
2008. p. 1 - 4. DOI : 10.1109/IEDM.2008.4796781.Double gate movable body Micro-Electro-Mechanical FET as hysteretic switch: Application to data transmission systems
2008. p. 302 - 305. DOI : 10.1109/ESSDERC.2008.4681758.Thermally Stable Distributed MEMS Phase Shifter for Airborne and Space Applications
2008. 38th European Microwave Conference, Amsterdam, The Netherlands, November 28-31, 2008. p. 100 - 103. DOI : 10.1109/EUMC.2008.4751397.Low voltage Ferroelectric FET with sub-100nm copolymer P(VDF-TrFE) gate dielectric for non-volatile 1T memory
2008. p. 162 - 165. DOI : 10.1109/ESSDERC.2008.4681724.Silicon nanostructuring for 3D bulk silicon versatile devices
2008. 34th International Conference on Micro- and Nano-Engineering, Athens, GREECE, Sep 15-18, 2008. DOI : 10.1016/j.mee.2008.12.083.Finite element analysis and analytical simulations of Suspended Gate-FET for ultra-low power inverters
Solid-State Electronics. 2008. DOI : 10.1016/j.sse.2008.04.013.Variability-Aware Design of Multilevel Logic Decoders for Nanoscale Crossbar Memories
IEEE Transactions on Computer-Aided Design of Integrated Circuits and Systems. 2008. DOI : 10.1109/TCAD.2008.2006076.Trapping Individual Carbon Nanotubes
2008.Three-dimensional electronic devices fabricated on a top-down silicon nanowire platform
Lausanne, EPFL, 2008. DOI : 10.5075/epfl-thesis-4068.Punch-through impact ionization MOSFET (PIMOS): From device principle to applications
Solid-State Electronics. 2008. DOI : 10.1016/j.sse.2008.04.021.In-Plane Silicon-On-Nothing Nanometer-Scale Resonant Suspended Gate MOSFET for In-IC Integration Perspectives
IEEE Electron Device Letters. 2008. DOI : 10.1109/LED.2008.919781.Fabrication of silicon-on-insulator MEM resonators with deep sub-micron transduction gaps
Microsystem Technologies. 2007. DOI : 10.1007/s00542-006-0349-y.A New Charge based Compact Model for Lateral Asymmetric MOSFET and its application to High Voltage MOSFET Modeling
2007. 20th International Conference on VLSI Design held jointly with 6th International Conference on Embedded Systems (VLSID'07), Bangalore, India, 6-10 01 2007. p. 177 - 182. DOI : 10.1109/VLSID.2007.15.Numerical and analytical simulations of Suspended Gate - FET for ultra-low power inverters
2007. 37th European Solid-State Device Research Conference, Munich, GERMANY, Sep 11-13, 2007. p. 167 - 170. DOI : 10.1109/ESSDERC.2007.4430905.Analytical Modeling of the Suspended-Gate FET and Design Insights for Digital Logic
2007. 2007 65th Annual Device Research Conference, South Bend, IN, USA, 18-20 06 2007. p. 103 - 104. DOI : 10.1109/DRC.2007.4373670.Above-IC RF MEMS devices for communication applications
Lausanne, EPFL, 2007. DOI : 10.5075/epfl-thesis-3778.Charge carriers photogeneration in pentacene field effect transistors
Romanian Journal Of Information Science And Technology. 2007.Copper / low-k technological platform for the fabrication of high quality factor above-IC passive devices
Lausanne, EPFL, 2007. DOI : 10.5075/epfl-thesis-3831.Small slope micro/nano-electronic switches
2007. International Semiconductor Conference, Sinaia, ROMANIA, Oct 15-17, 2007. p. 397 - 402. DOI : 10.1109/SMICND.2007.4519743.Length scaling of the Double Gate Tunnel FET with a high-K gate dielectric
Solid-State Electronics. 2007. DOI : 10.1016/j.sse.2007.09.014.Design and fabrication of suspended-gate MOSFETs for MEMS resonator, switch and memory applications
Lausanne, EPFL, 2007. DOI : 10.5075/epfl-thesis-3838.MEMS Tunable Capacitor with Fragmented Electrodes and Rotational Electro-Thermal Drive
2007. 2006 Symposium on Design, Test, Integration and Packaging of MEMS / MOEMS, DTIP 2006, Stresa, Italy, April 2006. p. 1589 - 1594. DOI : 10.1007/s00542-006-0350-5.Abrupt current switching due to impact ionization effects in Omega-MOSFET on low doped bulk silicon
2007. 37th European Solid-State Device Research Conference, Munich, GERMANY, Sep 11-13, 2007. p. 287 - 290. DOI : 10.1109/ESSDERC.2007.4430934.Threshold voltage in Tunnel FETs: physical definition, extraction, scaling and impact on IC design
2007. 37th European Solid-State Device Research Conference, Munich, GERMANY, Sep 11-13, 2007. p. 299 - 302. DOI : 10.1109/ESSDERC.2007.4430937.Ultra-thin nanograin polysilicon devices for hybrid CMOS-NANO integrated circuits
Lausanne, EPFL, 2007. DOI : 10.5075/epfl-thesis-3722.Bended gate-all-around nanowire MOSFET: a device with enhanced carrier mobility due to oxidation-induced tensile stress
2007. IEEE International Electron Devices Meeting, Washington, DC, Dec 10-12, 2007. p. 191 - 194. DOI : 10.1109/IEDM.2007.4418899.Gate-all-around silicon nanowires for hybrid single electron transistor/CMOS applications
Lausanne, EPFL, 2007. DOI : 10.5075/epfl-thesis-3983.Fragmented Membrane MEM Bulk Lateral Resonators with nano-gaps on 1.5 mu m SOI
2007. 37th European Solid-State Device Research Conference, Munich, GERMANY, Sep 11-13, 2007. p. 430 - 433. DOI : 10.1109/ESSDERC.2007.4430970.Capacités variables et inductances MEMS RF pour une intégration "Above-IC"
Lausanne, EPFL, 2007. DOI : 10.5075/epfl-thesis-3790.High Quality Factor Copper Inductors Integrated in Deep Dry Etched Quartz Substrates
2007. 2006 Symposium on Design, Test, Integration and Packaging of MEMS / MOEMS, DTIP 2006, Stresa, Italy, April 2006. p. 1483 - 1487. DOI : 10.1007/s00542-006-0364-z.Fabrication of Silicon-On-Insulator MEM Resonators with Deep Sub-Micron Transduction Gaps
2007. 2006 Symposium on Design, Test, Integration and Packaging of MEMS / MOEMS, DTIP 2006, Stresa, Italy, April 2006. p. 1489 - 1493. DOI : 10.1007/s00542-006-0349-y.Cointegration of Gate-All-Around MOSFETs and Local Silicon-on-Insulator Optical Waveguides on Bulk Silicon
IEEE Transactions On Nanotechnology. 2007. DOI : 10.1109/TNANO.2006.886748.Double-Gate Tunnel FET With High-k Gate Dielectric
IEEE Transactions on Electron Devices. 2007. DOI : 10.1109/TED.2007.899389.High quality factor copper inductors integrated in deep dry-etched quartz substrates
2007. Symposium on Design, Test, Integration and Packaging of MEMS/MOEMS, Stresa, ITALY, Apr 26-28, 2006. p. 1483 - 1487. DOI : 10.1007/s00542-006-0364-z.Compact Modeling of Lateral Nonuniform Doping in High-Voltage MOSFETs
IEEE Transactions on Electron Devices. 2007. DOI : 10.1109/TED.2007.896597.Integration of MOSFET transistors in MEMS resonators for improved output detection
2007. 14th International Conference on Solid-State Sensors, Actuators and Microsystems, Lyon, FRANCE, Jun 10-14, 2007. p. 1709 - 1712. DOI : 10.1109/SENSOR.2007.4300481.An EKV-based high voltage MOSFET model with improved mobility and drift model
Solid-State Electronics. 2007. DOI : 10.1016/j.sse.2007.09.024.Fault-tolerant multi-level logic decoder for nanoscale crossbar memory arrays
2007. IEEE/ACM International Conference on Computer-Aided Design, San Jose, California, USA, November 4-8. p. 765 - 772. DOI : 10.1109/ICCAD.2007.4397358.Low temperature single electron characteristics in gate-all-around MOSFET
2006. p. 427 - 430. DOI : 10.1109/ESSDER.2006.307729.Experimental study of the process dependence of Mo, Cr, Ti, and W silicon Schottky diodes and contact resistance
IEEE Transactions on Electron Devices. 2006. DOI : 10.1109/TED.2006.870574.Pentacene organic MOSFETs with Au and Pt bottom contacts
2006. p. 301 - 304. DOI : 10.1109/SMICND.2006.284003.A Compact DC and AC Model for Circuit Simulation of High Voltage VDMOS Transistor
2006. DOI : 10.1109/ISQED.2006.7.A Highly Scalable High Voltage MOSFET Model
2006. ESSDERC 2006, Montreux, Switzerland, 19-21 September 2006. p. 270 - 273. DOI : 10.1109/ESSDER.2006.307690.Local volume inversion and corner effects in triangular gate-all-around MOSFETs
2006. ESSDERC 2006. p. 359 - 362. DOI : 10.1109/ESSDER.2006.307712..Hybrid CMOS - Single Electron Transistor Circuits: Promise or Dream
2006.Vertical co-integration of AlSi MEMS tunable capacitors and Cu inductors for tunable LC blocks
2006.New Method for Threshold Voltage Extraction of High Voltage MOSFETs based on Gate-to-Drain Capacitance Measurement
IEEE Electron Device Letters. 2006. DOI : 10.1109/LED.2006.877275.Nano-scale ICT devices and systems
2006.MEMS Capacitive Pressure Sensor Based on Polysilicon Sealed Membrane
2006. 20th Eurosensors, Gothenburg, Sweden, September 17-20, 2006. p. 456 - 457.A New Charge based EKV Compact Model for Lateral Asymmetric MOSFET
2006.A new charge-based Compact Model for Lateral Asymmetric MOSFET
2006.Gate-all-around MOSFETs: true fabrication and characteristics
2006.Hybrid Nanowire-MOS circuit architectures: from basic physics to digital and analog applications
2006.Coulomb blockade in gate-all-around silicon nanowire MOSFETs
2006. p. 25 - 26.Analysis and Modeling of Lateral Non-Uniform Doping in High-Voltage MOSFETs
2006. DOI : 10.1109/IEDM.2006.347000.Ultra-low voltage MEMS resonator based on RSG-MOSFET
2006. p. 882 - 885. DOI : 10.1109/MEMSYS.2006.1627941.Conduction in ultra-thin SOI nanowires prototyped by FIB milling
Microelectronic Engineering. 2006. DOI : 10.1016/j.mee.2006.01.116.Co-integration of gate-all-around MOSFETs and local silicon-on insulator optical waveguides on bulk silicon for GHz on-chip optical signaling
2006. p. 31 - 32.Compact gate-all-around silicon light modulator for ultra high speed operation
Sensors and Actuators A: Physical. 2006. DOI : 10.1016/j.sna.2006.01.024.Double gate tunnel FET with ultrathin silicon body and high-k dielectric
2006. ESSDERC 2006. p. 383 - 386. DOI : 10.1109/ESSDER.2006.307718.MEMS Tunable Capacitor with laterally driven fragmented electrodes and electro-thermal actuation
2006.Polyimide sacrificial layer for SOI SG-MOSFET pressure sensor
Microelectronic Engineering. 2006. DOI : 10.1016/j.mee.2005.12.021.Capacitive pressure microsensor fabricated by bulk micromachining and sacricial layer etching
2006. 32nd Annual Conference of the IEEE Industrial Electronics Society, IECON 06, Paris, France, November 9-11, 2006. p. 2969 - 2974. DOI : 10.1109/IECON.2006.348052.Electrical conduction in 10 nm thin polysilicon wires from 4 to 400 K and their operation for hybrid memory
Japanese Journal of Applied Physics. 2006. DOI : 10.1143/JJAP.45.5461.Fast and Efficient Light Intensity Modulation in SOI with Gate-All-Around Transistor Phase Modulator
2006. 2005 Conference on Lasers and Electro-Optics (CLEO), Baltimore, USA, 2005. p. 110 - 112. DOI : 10.1109/CLEO.2005.201693.Electrical conduction in 10nm-thin polysilicon wires from 4K to 400K and their operation for hybrid memory
2005.Nanostencil-based lithography for silicon nanowires fabrication
2005.Suspended-Gate MOSFET: bringing new MEMS functionality into solid-state MOS transistor
2005. p. 479 - 481. DOI : 10.1109/IEDM.2005.1609384.A hybrid CMOS-SET co-fabrication platform using nano-grain polysilicon wires
2005. 30th International Conference on Micro- and Nano-Engineering (MNE 2004), Rotterdam,Netherlands, 19-22 September 2004. p. 239 - 343. DOI : 10.1016/j.mee.2004.12.033.Electro-Mechanical Modeling of MEMS Resonators with MOSFET detection
2005.Low temperature investigation of electrical conduction in polysilicon: simulation and experiment
2005.Light phase modulator
US2008030838 ; WO2005096076 . 2005.AlSi-based Resonant Suspended-Gate MOSFET
2005. 6th MEMSWAVE, Lausanne, Switzerland, June 23-24, 2005.Design and Fabrication Issues in Ultra-Thin Film SOI MEMS resonators
2005.Enseignement et PhD
Doctorant·es actuel·les
Ketong Yang, Edoardo Tenna, Hao Chen Yeh, Shima Rezaee Fakhr, Tú Anh Lê, Yann Zosso, Ali Gilani, Ehsan Ansari, Andrea Iaconeta, Zahra Saadat Somaehsofla, Niccolò Martinolli, Emi Myzeqari, Siddharth Gautam, Cyrille Masserey, Vanessa Conti, Lotte Franciska N De Schrijver, Onofrio Davide Caputo, Benoît Valentin Hirtzel
A dirigé les thèses EPFL de
Costin Anghel, Nasser Hefiana, Santanu Mahapatra, Serge Ecoffey, Raphaël Fritschi, Marcelo Bento Pisani, Alexander Mehdaoui, Nicolas Abelé, Vincent Pott, Kirsten Emilie Moselund, Nicoleta-Diana Ciressan, Daniel Grogg, Katherine Boucart, Montserrat Fernandez-Bolanos Badia, Donatello Acquaviva, Anupama Arun, Matthieu Bopp, Giovanni Antonio Salvatore, Jyotshna Bhandari, Nenad Cvetkovic, Luca De Michielis, Mohammad Najmzadeh, Alexandru Rusu, Hesham Ghoneim, Livio Lattanzio, Ji Cao, Sebastian Thimotee Bartsch, Marion Hermersdorf, Sara Rigante, Hoël Maxime Guérin, Elizabeth Buitrago Godinez, Negar Moridi, Nilay Dagtekin, Arnab Biswas, Pankaj Sharma, Clara-Fausta Moldovan, Wolfgang Amadeus Vitale, Davide Cutaia, Cem Alper, Mariazel Maqueda López, Emanuele Andrea Casu, Erick Antonio Garcia Cordero, Junrui Zhang, Ali Saeidi, Maneesha Rupakula, Nicolò Oliva, Francesco Bellando, Clarissa Convertino, Elisabetta Corti, Teodor Rosca, Fatemeh Qaderi Rahaqi, Carlotta Gastaldi, Luca Capua, Sadegh Kamaei Bahmaei, Fabio Bersano, Yann Christophe Sprunger, Hung-Wei Li
A co-dirigé les thèses EPFL de
Yogesh Singh Chauhan, Michele Tamagnone
Cours
Aspects of quantum science and sustainability
QUANT-411
Nous explorons l'intersection entre la science quantique et la durabilité. Sujets: 1)discussion des aspects fondamentaux de la thermodynamique du calcul; 2)analyse et benchmark du cout energétique des devices quantiques actuels et futurs; 3)projets sur des exemples de cas d'utilisations.
Nanoelectronics
EE-535
Ce cours présente les tendances actuelles en technologie et dispositifs nanoélectroniques en termes de réduction des dimensions, meilleures performances, nouvelles fonctionalités et ultra-basse consommation. Les défis des nouveaux nanocomposants pour pousser les roadmaps industriels sont analysés.
Semiconductor devices II
EE-567
Les étudiants apprendront à comprendre les principes fondamentaux et les applications des dispositifs, matériaux et concepts émergents à l'échelle nanométrique. matériaux et concepts à l'échelle nanométrique. Remarque : au moins 5 étudiants doivent être inscrits pour que le cours soit donné.