Mihai Adrian Ionescu
Nationalité: Swiss and Romanian
EPFL STI IEL NANOLAB
ELB 335 (Bâtiment ELB)
Station 11
1015 Lausanne
+41 21 693 39 78
+41 21 693 39 79
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Expertise
Nanoelectronic devices
Nanotechnology
Steep-slope tunnel FETs and ferroelectric FETs
Energy efficient nanoelectronics for sustainability
Qubits for Quantum Computing
Edge AI sensors
Modeling and Simulation of Solid-State Electronic Devices
Lab On Skin Technology for Digital twins
Nanotechnology
Steep-slope tunnel FETs and ferroelectric FETs
Energy efficient nanoelectronics for sustainability
Qubits for Quantum Computing
Edge AI sensors
Modeling and Simulation of Solid-State Electronic Devices
Lab On Skin Technology for Digital twins
Expertise
Nanoelectronic devices
Nanotechnology
Steep-slope tunnel FETs and ferroelectric FETs
Energy efficient nanoelectronics for sustainability
Qubits for Quantum Computing
Edge AI sensors
Modeling and Simulation of Solid-State Electronic Devices
Lab On Skin Technology for Digital twins
Nanotechnology
Steep-slope tunnel FETs and ferroelectric FETs
Energy efficient nanoelectronics for sustainability
Qubits for Quantum Computing
Edge AI sensors
Modeling and Simulation of Solid-State Electronic Devices
Lab On Skin Technology for Digital twins
Prix et distinctions
Contributions to SOI technology
1994
For contributions to the progress in engineering sciences in the domain of electronics
2009
Engineering
2013
IEEE
2017
“for leadership and contributions to the field of energy-efficient steep slope devices and technologies.â€
2024
IEEE
2023
Publications représentatives
Tunnel field-effect transistors as energy-efficient electronic switches
A.M. Ionescu, H. Riel
Published in Nature in
Nitrogen doping of vertically aligned carbon nanotubes for on-chip CMOS-compatible pseudocapacitive supercapacitors
Carbon. 2026. DOI : 10.1016/j.carbon.2025.121018.Pulsed Laser and Atomic Layer Deposition of CMOS-Compatible Vanadium Dioxide: Enabling Ultrathin Phase-Change Films
ACS Applied Electronic Materials. 2025. DOI : 10.1021/acsaelm.5c01132.An Investigation of VO2 Nanowire Arrays for Integrated Sensing. From Non-Stochastic Nanowires to Stochastic Nanostructures
2025. 2025 23rd International Conference on Solid-State Sensors, Actuators and Microsystems (Transducers), Orlando, FL, USA, 2025-06-29 - 2025-07-03. p. 494 - 497. DOI : 10.1109/transducers61432.2025.11110500.CMOS-Compatible Antiferroelectric-Dielectric Capacitors for Multifunctional Energy Storage and Tunable Electronics
2025. 2025 23rd International Conference on Solid-State Sensors, Actuators and Microsystems (Transducers), Orlando, FL, USA, 2025-06-29 - 2025-07-03. p. 1197 - 1200. DOI : 10.1109/transducers61432.2025.11109140.CMOS-Compatible Biosensing Platform for Multiplexed Lactate and PH Monitoring in Low-Volume Biosamples
2025. 2025 23rd International Conference on Solid-State Sensors, Actuators and Microsystems (Transducers), Orlando, FL, USA, 2025-06-29 - 2025-07-03. p. 924 - 927. DOI : 10.1109/transducers61432.2025.11111474.Bridging Blood and Skin: Biomarker Profiling in Dermal Interstitial Fluid (dISF) for Minimally Invasive Diagnostics
Biosensors. 2025. DOI : 10.3390/bios15050301.Integration of Cobalt Ferromagnetic Control Gates for Electrical and Magnetic Manipulation of Semiconductor Quantum Dots (Adv. Funct. Mater. 14/2025)
Advanced Functional Materials. 2025. DOI : 10.1002/adfm.202570080.Nanomole Process: Enabling Localized Metallic Back-Gates for Enhanced Cryogenic Front-to-Back Coupling in FDSOI Quantum Dots
IEEE Journal of the Electron Devices Society. 2025. DOI : 10.1109/JEDS.2025.3545661.Vanadium-Doped Hafnium Oxide: A High-Endurance Ferroelectric Thin Film with Demonstrated Negative Capacitance
NANO LETTERS. 2025. DOI : 10.1021/acs.nanolett.4c05671.Integration of Cobalt Ferromagnetic Control Gates for Electrical and Magnetic Manipulation of Semiconductor Quantum Dots
Advanced Functional Materials. 2025. DOI : 10.1002/adfm.202419940.Biomarkers in Interstitial Fluid: From Screening to Sensor Development
Lausanne, EPFL, 2025. DOI : 10.5075/epfl-thesis-11266.Electron Spin Qubit Architectures on Fully Depleted Silicon-On-Insulator Substrates for Scalable Quantum Computing
Lausanne, EPFL, 2025. DOI : 10.5075/epfl-thesis-11089.Future of Computing: towards Energy Efficient Cognitive Chips
2025. International VLSI Symposium on Technology, Systems and Applications (VLSI TSA 2025), Hsinchu, Taiwan, Province of China, 2025-04-21 - 2025-04-24. DOI : 10.1109/VLSITSA64674.2025.11047135.Wafer-Scale Demonstration of a Highly Sensitive Strain Sensor Based on Polycrystalline VO<inf>2</inf>
2025. 38th International Conference on Micro Electro Mechanical Systems, Kaohsiung, Taiwan, Province of China, 2025-01-19 - 2025-01-23. p. 635 - 638. DOI : 10.1109/MEMS61431.2025.10917570.Cryogenic Front-to-Back Coupling in FD-SOI for Tunable Qubits by Localized Metallic Back-Gate
2024. 50th IEEE European Solid-State Electronics Research Conference, Bruges, Belgium, 2024-09-09 - 2024-09-12. p. 165 - 168. DOI : 10.1109/ESSERC62670.2024.10719596.Graphene-enhanced ferroelectric domain wall high-output memristor
Applied Physics Letters. 2024. DOI : 10.1063/5.0232620.Aptamer-Decorated Graphene Channel Array with Liquid-Gating for Sensing Cortisol Stress Hormone
2024. IEEE BioSensors Conference, Cambridge, United Kingdom, 2024-07-28 - 2024-07-30. DOI : 10.1109/BioSensors61405.2024.10712663.AC-Driven Aptamer-Decorated Graphene FET for Cortisol Detection
2024. IEEE Sensors, Kobe, Japan, 2024-10-20 - 2024-10-23. DOI : 10.1109/SENSORS60989.2024.10785129.Controlled Electronic and Magnetic Landscape in Self-Assembled Complex Oxide Heterostructures
Advanced Materials. 2023. DOI : 10.1002/adma.202300200.Millimeter-wave to near-terahertz sensors based on reversible insulator-to-metal transition in VO2
Communications Materials. 2023. DOI : 10.1038/s43246-023-00350-x.Ferroelectric Junctionless Double-Gate Silicon-On-Insulator FET as a Tripartite Synapse
IEEE Electron Device Letters. 2023. DOI : 10.1109/LED.2023.3249972.Nanoscale local modification of PMMA refractive index by tip-enhanced femtosecond pulsed laser irradiation
Applied Surface Science. 2023. DOI : 10.1016/j.apsusc.2023.157014.Energy-Efficient Electronic Functions Based on the Co-integration of 2D and Ferroelectric Materials
Lausanne, EPFL, 2023. DOI : 10.5075/epfl-thesis-10096.Model-Based ISO 14971 Risk Management of EEG-Based Medical Devices
2023. 45th Annual International Conference of the IEEE Engineering in Medicine and Biology Society (EMBC), Sydney Australia, July 24-27, 2023. DOI : 10.1109/EMBC40787.2023.10340131.Metamodel for Safety Risk Management of Medical Devices Based on ISO 14971
2023. The ACM/IEEE 26th International Conference on Model-Driven Engineering Languages and Systems, Västerås, Sweden, October 1-6, 2023.Ultra-High Sensitivity Silicon Nanowire Array Biosensor Based on a Constant-Current Method for Continuous Real-Time pH and Protein Monitoring in Interstitial Fluid
2023. IEEE 49th European Solid-State Circuits Conference (ESSCIRC), Lisbon, PORTUGAL, SEP 11-14, 2023. p. 153 - 156. DOI : 10.1109/ESSCIRC59616.2023.10268731.Static and Dynamic Stochastic Analysis of a Temperature-Sensitive VO<sub>2</sub> Spiking Neuron
2023. IEEE 53rd European Solid-State Device Research Conference (ESSDERC), Lisbon, PORTUGAL, SEP 11-14, 2023. p. 81 - 84. DOI : 10.1109/ESSDERC59256.2023.10268509.Monitoring of Protein and pH Levels in Human Biofluids using FD-SOI Silicon Nanowire Arrays
Lausanne, EPFL, 2023. DOI : 10.5075/epfl-thesis-9998.Giant switchable non thermally-activated conduction in 180 degrees domain walls in tetragonal Pb(Zr,Ti)O-3
Nature Communications. 2022. DOI : 10.1038/s41467-022-34777-6.Defect-induced magnetism in homoepitaxial SrTiO3
Apl Materials. 2022. DOI : 10.1063/5.0101411.Highly Sensitive Detection of the Antidepressant Fluoxetine With an Extended Gate Field Effect Transistor
Ieee Sensors Journal. 2022. DOI : 10.1109/JSEN.2022.3161116.Negative Capacitance in HfO2 Gate Stack Structures With and Without Metal Interlayer
Ieee Transactions On Electron Devices. 2022. DOI : 10.1109/TED.2022.3157579.Label-Free C-Reactive Protein Si Nanowire FET Sensor Arrays With Super-Nernstian Back-Gate Operation
Ieee Transactions On Electron Devices. 2022. DOI : 10.1109/TED.2022.3144108.Multi-Gate FD-SOI Single Electron Transistor for hybrid SET-MOSFET quantum computing
2022. 48th IEEE European Solid State Circuits Conference (ESSCIRC), Milan, ITALY, 2022-09-19 - 2022-09-22. p. 49 - 52. DOI : 10.1109/ESSCIRC55480.2022.9911479.Subthreshold VO2 vertical switches for large-bandwidth millimeter-wave and sub-terahertz detection
2022. 47th International Conference on Infrared, Millimeter and Terahertz Waves (IRMMW-THz), Delft, NETHERLANDS, Aug 28-Sep 02, 2022. DOI : 10.1109/IRMMW.THz50927.2022.9895513.Spike-Based Sensing and Communication for Highly Energy-Efficient Sensor Edge Nodes
2022. 2nd IEEE International Symposium on Joint Communications and Sensing (JC and S), Seefeld, AUSTRIA, Mar 09-10, 2022. DOI : 10.1109/JCS54387.2022.9743501.Gate energy efficiency and negative capacitance in ferroelectric 2D/2D TFET from cryogenic to high temperatures
Npj 2D Materials And Applications. 2021. DOI : 10.1038/s41699-021-00257-6.Intrinsic switching in Si-doped HfO2: A study of Curie-Weiss law and its implications for negative capacitance field-effect transistor
Applied Physics Letters. 2021. DOI : 10.1063/5.0052129.A Wearable Low-Power Sensing Platform for Environmental and Health Monitoring: The Convergence Project
Sensors. 2021. DOI : 10.3390/s21051802.Sensitivity, Noise and Resolution in a B -Modified Foundry-Made ISFET with Miniaturized Reference Electrode for Wearable Point-of-Care Applications
Sensors. 2021. DOI : 10.3390/s21051779.A hybrid III-V tunnel FET and MOSFET technology platform integrated on silicon
Nature Electronics. 2021. DOI : 10.1038/s41928-020-00531-3.Extended gate field-effect-transistor for sensing cortisol stress hormone
Communications Materials. 2021. DOI : 10.1038/s43246-020-00114-x.Double-Gate Si Nanowire FET Sensor Arrays For Label-Free C-Reactive Protein detection enabled by antibodies fragments and pseudo-super-Nernstian back-gate operation
2021. 67th Annual IEEE International Electron Devices Meeting (IEDM 2021), San Francisco, CA, USA, December 11-15, 2021. DOI : 10.1109/IEDM19574.2021.9720670.High Tuning Range Spiking 1R-1T VO2 Voltage-Controlled Oscillator for Integrated RF and Optical Sensing
2021. IEEE 51st European Solid-State Device Research Conference (ESSDERC), ELECTR NETWORK, Sep 06-09, 2021. p. 183 - 186. DOI : 10.1109/ESSDERC53440.2021.9631804.Networks of Coupled VO2 Oscillators for Neuromorphic Computing
Lausanne, EPFL, 2021. DOI : 10.5075/epfl-thesis-9303.High Tuning Range Spiking 1R-1T VO2 Voltage-Controlled Oscillator for Integrated RF and Optical Sensing
2021. 47th IEEE European Solid State Circuits Conference (ESSCIRC), ELECTR NETWORK, Sep 06-09, 2021. p. 183 - 186. DOI : 10.1109/ESSCIRC53450.2021.9567761.An Experimental Study Of The Photoresponse Of 1T-1R Oscillators Based On Vanadium Dioxide: Towards Spiking Sensing Systems
2021. 21st International Conference on Solid-State Sensors, Actuators and Microsystems (Transducers), ELECTR NETWORK, Jun 20-25, 2021. p. 373 - 376. DOI : 10.1109/TRANSDUCERS50396.2021.9495742.Radio Frequency Temperature Transducers Based On Insulator-Metal Phase Transition In Vo2 And Ge-Doped Vo2 Ald Thin Films
2021. 21st International Conference on Solid-State Sensors, Actuators and Microsystems (Transducers), ELECTR NETWORK, Jun 20-25, 2021. p. 1355 - 1358. DOI : 10.1109/TRANSDUCERS50396.2021.9495498.Coupled VO2 oscillators circuit as analog first layer filter in convolutional neural networks
Frontiers In Neuroscience. 2021. DOI : 10.3389/fnins.2021.628254.Antibodies fragments as enablers of cardiac troponin (cTn) detection with extended gate metal-oxide-semiconductor field effect transistors (EGFET)
2020. p. 1699 - 1699.Intrinsic or nucleation-driven switching: An insight from nanoscopic analysis of negative capacitance Hf1-xZrxO2-based structures
Applied Physics Letters. 2020. DOI : 10.1063/5.0021272.Temperature dependence of reconfigurable bandstop filters using vanadium dioxide switches
Applied Physics Letters. 2020. DOI : 10.1063/5.0021942.The 3D Smith Chart: From Theory to Experimental Reality
IEEE Microwave Magazine. 2020. DOI : 10.1109/MMM.2020.3014984.3D Smith chart constant quality factor semi-circles contours for positive and negative resistance circuits
IEEE Access. 2020. DOI : 10.1109/ACCESS.2020.3026917.Corrections to “Experimental Details of a Steep-Slope Ferroelectric InGaAs Tunnel-FET With High-Quality PZT and Modeling Insights in the Transient Polarization”
Ieee Transactions On Electron Devices. 2020. DOI : 10.1109/TED.2020.2995786.Experimental Investigation of Pulsed Laser Deposition of Ferroelectric Gd:HfO2 in a CMOS BEOL Compatible Process
Acs Applied Electronic Materials. 2020. DOI : 10.1021/acsaelm.0c00319.Nanowire Tunnel FET with Simultaneously Reduced Subthermionic Subthreshold Swing and Off-Current due to Negative Capacitance and Voltage Pinning Effects
Nano Letters. 2020. DOI : 10.1021/acs.nanolett.9b05356.WSe2/SnSe2 vdW heterojunction Tunnel FET with subthermionic characteristic and MOSFET co-integrated on same WSe2 flake
Npj 2D Materials And Applications. 2020. DOI : 10.1038/s41699-020-0142-2.Subthermionic negative capacitance ion sensitive field-effect transistor
Applied Physics Letters. 2020. DOI : 10.1063/5.0005411.Radio-Frequency Characteristics of Ge-doped Vanadium Dioxide Thin Films with Increased Transition Temperature
ACS Applied Electronic Materials. 2020. DOI : 10.1021/acsaelm.0c00078.An Experimental Study on Mixed-Dimensional 1D-2D van der Waals Single-Walled Carbon Nanotube-WSe2 Hetero-Junction
IEEE Electron Device Letters. 2020. DOI : 10.1109/LED.2020.2974400.Monolithically Integrated Catalyst-Free High Aspect Ratio InAs-on-Insulator (InAsOI) FinFETs for pH Sensing
Ieee Journal Of The Electron Devices Society. 2020. DOI : 10.1109/JEDS.2020.3008094.Negative capacitance semiconductor sensor
EP3671199 ; US11289601 ; EP3671199 ; US2020194592 . 2020.At the end of scaling: 2D materials for computing and sensing applications
Lausanne, EPFL, 2020. DOI : 10.5075/epfl-thesis-7695.Sweat monitoring with CMOS compatible technology: ISFETS and beyond
Lausanne, EPFL, 2020. DOI : 10.5075/epfl-thesis-7464.Negative Capacitance Double-Gate Junctionless FETs: A Charge-Based Modeling Investigation of Swing, Overdrive and Short Channel Effect
Ieee Journal Of The Electron Devices Society. 2020. DOI : 10.1109/JEDS.2020.3020976.InAs-on-Insulator Fin Nanostructures for Integrated Computation and Sensing Functions
Lausanne, EPFL, 2020. DOI : 10.5075/epfl-thesis-7303.Extended Gate Field Effect Transistor Based Sensor for Detection of Trace Amounts of Anti-Depressant Drug
Ieee Access. 2020. DOI : 10.1109/ACCESS.2020.3034691.High-Performance III-V MOSFETs and Tunnel-FETs Integrated on Silicon
Lausanne, EPFL, 2020. DOI : 10.5075/epfl-thesis-8346.Extended-Gate FET cortisol sensor for stress disorders based on aptamers-decorated graphene electrode: Fabrication, Experiments and Unified Analog Predictive Modeling
2020. IEEE International Electron Devices Meeting (IEDM), ELECTR NETWORK, Dec 12-18, 2020. DOI : 10.1109/IEDM13553.2020.9372063.Experimental Details of a Steep-Slope Ferroelectric InGaAs Tunnel-FET With High-Quality PZT and Modeling Insights in the Transient Polarization
IEEE Transactions on Electron Devices. 2019. DOI : 10.1109/TED.2019.2954585.3D Smith charts scattering parameters frequency-dependent orientation analysis and complex-scalar multi-parameter characterization applied to Peano reconfigurable vanadium dioxide inductors
Scientific Reports. 2019. DOI : 10.1038/s41598-019-54600-5.Detection of ultra-low protein concentrations with the simplest possible field effect transistor
Nanotechnology. 2019. DOI : 10.1088/1361-6528/ab192c.Hysteresis Dynamics in Double-Gated n-Type WSe2 FETs With High-k Top Gate Dielectric
IEEE Journal of the Electron Devices Society. 2019. DOI : 10.1109/JEDS.2019.2933745.Sweat Biomarker Sensor Incorporating Picowatt, Three-Dimensional Extended Metal Gate Ion Sensitive Field Effect Transistors
ACS Sensors. 2019. DOI : 10.1021/acssensors.9b00597.Negative Capacitance as Universal Digital and Analog Performance Booster for Complementary MOS Transistors
Scientific Reports. 2019. DOI : 10.1038/s41598-019-45628-8.A Novel Reconfigurable CMOS Compatible Ka Band Bandstop Structure Using Split-Ring Resonators and Vanadium Dioxide (VO2) Phase Change Switches
2019. 2019 IEEE MTT-S International Microwave Symposium (IMS), Boston, June 7-11,2019. p. 865 - 867. DOI : 10.1109/MWSYM.2019.8701121.NanoElectronics roadmap for Europe: From nanodevices and innovative materials to system integration
Solid-State Electronics. 2019. DOI : 10.1016/j.sse.2019.03.014.Resistive Coupled VO2 Oscillators for Image Recognition
2019. 2018 IEEE International Conference on Rebooting Computing (ICRC), McLean, VA, USA, 7-9 Nov. 2018. p. 195 - 201. DOI : 10.1109/ICRC.2018.8638626.Near Hysteresis-Free Negative Capacitance InGaAs Tunnel FETs with Enhanced Digital and Analog Figures of Merit below VDD=400mV
2019. IEEE International Electron Devices Meeting (IEDM). DOI : 10.1109/IEDM.2018.8614583.Field-effect transistor device or sensor for sensing ions, molecules or biomarkers in a fluid
US2021270770 ; EP3811071 ; CN112567238 ; WO2019244113 . 2019.Wearable System for Real-Time Sensing of Biomarkers in Human Sweat
Lausanne, EPFL, 2019. DOI : 10.5075/epfl-thesis-9696.VO2 oscillators coupling for Neuromorphic Computation
2019. Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon (EUROSOI-ULIS), Grenoble, FRANCE, Apr 01-03, 2019. DOI : 10.1109/EUROSOI-ULIS45800.2019.9041875.Co-integrated Subthermionic 2D/2D WSe2/SnSe2 Vertical Tunnel FET and WSe2 MOSFET on same flake: towards a 2D/2D vdW Dual-Transport Steep Slope FET
2019. 65th IEEE Annual International Electron Devices Meeting (IEDM), San Francisco, CA, Dec 09-11, 2019. DOI : 10.1109/IEDM19573.2019.8993643.Sub-Thermionic Scalable III-V Tunnel Field-Effect Transistors Integrated on Si (100)
2019. 65th IEEE Annual International Electron Devices Meeting (IEDM), San Francisco, CA, Dec 09-11, 2019. DOI : 10.1109/IEDM19573.2019.8993610.Monolithically integrated catalyst-free High Aspect Ratio InAs-On-Insulator (InAsOI) FinFETs for pH sensing
2019. 49th European Solid-State Device Research Conference (ESSDERC), Cracow, POLAND, Sep 23-26, 2019. p. 106 - 109. DOI : 10.1109/ESSDERC.2019.8901739.Sensing device for sensing minor charge variations
US10818785 ; US2019172937 . 2019.Double-gate field-effect-transistor based biosensor
US11467123 ; US2020284753 ; EP3679363 ; WO2019048059 . 2019.Apparatus for non-invasive sensing of biomarkers in human sweat
US11331009 ; EP3697317 ; WO2019076733 ; WO2019076733 ; US2019110722 . 2019.Millimeter-wave-triggering of insulator-to-metal transition in Vanadium dioxide
2019. 44th International Conference on Infrared, Millimeter, and Terahertz Waves (IRMMW-THz), Paris, FRANCE, Sep 01-06, 2019. DOI : 10.1109/IRMMW-THz.2019.8874271.Capillary flow device for bio-fluid collection with semiconductor sensors
EP3510403 ; EP3510403 ; US11389096 ; US2019246959 ; EP3510403 ; US2018070869 ; WO2018047125 . 2019.Transient Negative Capacitance of Silicon-doped HfO2 in MFMIS and MFIS structures: experimental insights for hysteresis-free steep slope NC FETs
2019. 65th IEEE Annual International Electron Devices Meeting (IEDM), San Francisco, CA, Dec 09-11, 2019. DOI : 10.1109/IEDM19573.2019.8993523.Exploration of Negative Capacitance Devices and Technologies
Lausanne, EPFL, 2019. DOI : 10.5075/epfl-thesis-9340.Three-Dimensional Integrated Ultra-Low-Volume Passive Microfluidics with Ion-Sensitive Field-Effect Transistors for Multiparameter Wearable Sweat Analyzers
ACS Nano. 2018. DOI : 10.1021/acsnano.8b07413.Double gate n-type WSe2 FETs with high-k top gate dielectric and enhanced electrostatic control
2018. 48th European Solid-State Device Research Conference - ESSDERC 2018, 3-6 Sept. 2018, Dresden, Germany. p. 114 - 117. DOI : 10.1109/ESSDERC.2018.8486867.A Review and Mathematical Treatment of Infinity on the Smith Chart, 3D Smith Chart and Hyperbolic Smith Chart
Symmetry-basel. 2018. DOI : 10.3390/sym10100458.Gate Leakage Tunneling Impact on the InAs/GaSb Heterojunction Electron-Hole Bilayer Tunneling Field-Effect Transistor
IEEE Transactions on Electron Devices. 2018. DOI : 10.1109/TED.2018.2866123.Genuinely Ferroelectric Sub-1-Volt-Switchable Nanodomains in HfxZr(1-x)O2 Ultrathin Capacitors
ACS Applied Materials & Interfaces. 2018. DOI : 10.1021/acsami.8b07988.A Reconfigurable Inductor Based on Vanadium Dioxide Insulator-to-Metal Transition
Ieee Microwave And Wireless Components Letters. 2018. DOI : 10.1109/LMWC.2018.2854961.Steep Slope Transistors for Quantum Computing
2018. IEEE 2nd Electron Devices Technology and Manufacturing Conference - EDTM 2018, Kobe, Japan, 13-16 March 2018. p. 56 - 58. DOI : 10.1109/EDTM.2018.8421422.Low power analog frontend for ISFET sensor readout
2018. 17th International Meeting on Chemical Sensors - IMCS 2018, Vienna, Austria, 2018-07-15 - 2018-07-19. DOI : 10.5162/IMCS2018/FE.1.Design Considerations of Ferroelectric Properties for Negative Capacitance MOSFETs
2018. p. 10 - 12. DOI : 10.1109/EDTM.2018.8421443.Effect of hysteretic and non-hysteretic negative capacitance on tunnel FETs DC performance
Nanotechnology. 2018. DOI : 10.1088/1361-6528/aaa590.MoS2/VO2 vdW heterojunction devices: Tunable rectifiers, photodiodes and field effect transistors
2018. IEDM, San Francisco, California, USA, December 2-6, 2017. p. 36.1.1 - 36.1.4. DOI : 10.1109/IEDM.2017.8268503.Wearable System with Integrated Passive Microfluidics for Real-Time Electrolyte Sensing in Human Sweat
Lausanne, EPFL, 2018. DOI : 10.5075/epfl-thesis-8849.Capillary flow device for bio-fluid collection with semiconductor sensors
EP3510403 ; EP3510403 ; US11389096 ; US2019246959 ; EP3510403 ; US2018070869 ; WO2018047125 . 2018.Computing with Ferroelectric FETs: Devices, Models, Systems, and Applications
2018. Proceedings Of The 2018 Design, Automation & Test In Europe Conference & Exhibition (Date), Dresden, GERMANY, Mar 19-23, 2018. p. 1289 - 1298. DOI : 10.23919/DATE.2018.8342213.Negative capacitance tunnel F£Ts: Experimental demonstration of outstanding simultaneous boosting of on-current, transconductance, overdrive, and swing
2018. 2017 Silicon Nanoelectronics Workshop, Kyoto, Japan, June 4-5, 2017. DOI : 10.23919/SNW.2017.8242270.The Future of Electronics: Silicon to Cloud Technologies
2018. 20th International Conference on Transparent Optical Networks (ICTON), Bucharest, ROMANIA, Jul 01-05, 2018. DOI : 10.1109/ICTON.2018.8473849.CMOS 3D-Extended Metal Gate ISFETs with Near Nernstian Ion Sensitivity
2018. 76th Device Research Conference (DRC), Santa Barbara, CA, Jun 24-27, 2018. DOI : 10.1109/DRC.2018.8442197.Prospects for energy-efficient edge computing with integrated HfO2-based ferroelectric devices
2018. 26th IFIP/IEEE International Conference on Very Large Scale Integration (VLSI-SoC), Verona, ITALY, Oct 08-10, 2018. p. 180 - 183. DOI : 10.1109/VLSI-SoC.2018.8644809.Near Hysteresis-Free Negative Capacitance InGaAs Tunnel FETs with Enhanced Digital and Analog Figures of Merit below V-DD=400mV
2018. 64th IEEE Annual International Electron Devices Meeting (IEDM), San Francisco, CA, Dec 01-05, 2018. p. 13.4.1 - 13.4.4. DOI : 10.1109/IEDM.2018.8614583.Tunnel fet based non-volatile memory boosted by vertical band-to-band tunneling
US2018012659 . 2018.Novel Digital and Radio Frequency Electronic Functions Enabled by Steep-Slope Phase-Change Devices
Lausanne, EPFL, 2018. DOI : 10.5075/epfl-thesis-8596.An Experimental Study of Heterostructure Tunnel FET Nanowire Arrays: Digital and Analog Figures of Merit from 300K to 10K
2018. 64th IEEE Annual International Electron Devices Meeting (IEDM), San Francisco, CA, Dec 01-05, 2018. p. 13.5.1 - 13.5.4. DOI : 10.1109/IEDM.2018.8614665.Embedded Passive Nano-Liter Micropump For Sweat Collection And Analysis
2018. 31st IEEE International Conference on Micro Electro Mechanical Systems (MEMS), Belfast, NORTH IRELAND, Jan 21-25, 2018. p. 1217 - 1220. DOI : 10.1109/MEMSYS.2018.8346782.Polarity Control of Top Gated Black Phosphorous FETs by Workfunction Engineering of Pre-Patterned Au and Ag Embedded Electrodes
Ieee Journal Of The Electron Devices Society. 2018. DOI : 10.1109/JEDS.2018.2817289.All CMOS Integrated 3D-Extended Metal Gate ISFETs for pH and Multi-Ion (Na+, K+, Ca2+) sensing
2018. 64th IEEE Annual International Electron Devices Meeting (IEDM), San Francisco, CA, Dec 01-05, 2018. p. 12.1.1 - 12.1.4. DOI : 10.1109/IEDM.2018.8614668.Lab on skin™: 3D monolithically integrated zero-energy micro/nanofludics and FD SOI ion sensitive FETs for wearable multi-sensing sweat applications
2017. 2017 IEEE International Electron Devices Meeting - IEDM 2017, San Francisco, CA, US, December 2-6, 2017. p. 18.1.1 - 18.1.4. DOI : 10.1109/IEDM.2017.8268413.Negative Capacitance Tunnel FETs: Experimental Demonstration of Outstanding Simultaneous Boosting of On-current, Transconductance, Overdrive, and Swing
Silicon Nanoelectronic Workshop, Kyoto, Japan, June 4-5, 2017.Shunt capacitive switches based on VO2 metal insulator transition for RF phase shifter applications
2017. ESSDERC 2017 - 47th IEEE European Solid-State Device Research Conference (ESSDERC), Leuven, Belgium, 11-14 September 2017. p. 232 - 235. DOI : 10.1109/ESSDERC.2017.8066634.Complementary black phosphorous FETs by workfunction engineering of pre-patterned Au and Ag embedded electrodes
2017. Solid-State Device Research Conference (ESSDERC), 2017 47th European, September, 11-14, 2017. DOI : 10.1109/ESSDERC.2017.8066602.Benchmarking of Homojunction Strained-Si NW Tunnel FETs for Basic Analog Functions
IEEE Transactions on Electron Devices. 2017. DOI : 10.1109/TED.2017.2665527.Negative Capacitance Tunnel FETs: Experimental Demonstration of Outstanding Simultaneous Boosting of On-current, Transconductance, Overdrive, and Swing
2017. Silicon Nanoelectronic Workshop, Kyoto, Japan, June 4-5, 2017. p. 7 - 8. DOI : 10.23919/SNW.2017.8242270.Energy efficient computing and sensing in the Zettabyte era: From silicon to the cloud
2017. 2017 IEEE International Electron Devices Meeting (IEDM), San Francisco, CA, USA, 2-6 Dec, 2017. p. 1.2.1 - 1.2.8. DOI : 10.1109/IEDM.2017.8268307.Lowering motional resistance by partially HfO2 gap filling in double-ended tuning fork MEMS resonators.
2017. 2017 Joint Conference of the European Frequency and Time Forum and IEEE International Frequency Control Symposium ((EFTF/IFC), BESANÇON, France, 9-13 July 2017. p. 805 - 806. DOI : 10.1109/FCS.2017.8089040.A Steep-Slope Transistor Combining Phase-Change and Band-to-Band-Tunneling to Achieve a sub-Unity Body Factor
Scientific Reports. 2017. DOI : 10.1038/s41598-017-00359-6.Negative Capacitance Field Effect Transistors; Capacitance Matching and non-Hysteretic Operation
2017. Solid-State Device Research Conference (ESSDERC), 2017 47th European, Leuven, Belgium, 11-14 Sept. 2017. DOI : 10.1109/ESSDERC.2017.8066596.Low Impedance ALD HfO2 Partially-Filled-Gap Flexural and Bulk MEMS Resonators Piezoresistively Detected for Distributed Mass Sensing
2017. DOI : 10.3390/proceedings1040391.Modeling and optimization of Tunnel-FET architectures exploiting carrier gas dimensionality
Lausanne, EPFL, 2017. DOI : 10.5075/epfl-thesis-7587.Micromechanical resonators with sub-micron gaps filled with high-k dielectrics
Lausanne, EPFL, 2017. DOI : 10.5075/epfl-thesis-7938.Van der Waals MoS2/VO2 heterostructure junction with tunable rectifier behavior and efficient photoresponse
Scientific Reports. 2017. DOI : 10.1038/s41598-017-12950-y.Negative Capacitance as Performance Booster for Tunnel FETs and MOSFETs: An Experimental Study
IEEE Electron Device Letters. 2017. DOI : 10.1109/LED.2017.2734943.Low-energy biomarker detection through charge-based impedance measurements
2016. 2016 IEEE SENSORS, Orlando, FL, USA, October 30th - November 3rd, 2016. DOI : 10.1109/ICSENS.2016.7808744.Graphene quantum capacitors for high-Q tunable LC-tanks for RF ICs
2016. ESSDERC 2016 - 46th European Solid-State Device Research Conference, Lausanne, Switzerland, 12-15 September 2016. p. 345 - 348. DOI : 10.1109/ESSDERC.2016.7599657.Sub-20nm gaps in HSQ for ultra-scaled nanoelectronic devices
42nd Micro Nano Engineering, Vienna, Austria, Septemeber 19-23,2016.Ultra-Low Power Ion-Sensing Smart Platform for Noninvasive Healthcare Applications
2016. Smart Systems Integration, Munich, Germany, March 9-10, 2016.Single field effect transistor capacitor-less memory device and method of operating the same
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Lausanne, EPFL, 2016. DOI : 10.5075/epfl-thesis-7226.Condition for the negative capacitance effect in metal–ferroelectric–insulator–semiconductor devices
Nanotechnology. 2016. DOI : 10.1088/0957-4484/27/11/115201.Assessment of Confinement-Induced Band-to-Band Tunneling Leakage in the FinEHBTFET
2016. 2nd Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon (EURSOI-ULIS), TU Wien, Inst Microelectron, Vienna, AUSTRIA, JAN 25-27, 2016. p. 20 - 23. DOI : 10.1109/ULIS.2016.7440042.Heterogeneous Integration of Low Power pH FinFET sensors with Passive Capillary Microfluidics and miniaturized Ag/AgCl quasi-Reference Electrode
2016. European Solid-State Device Research Conference (ESSDERC), Lausanne, Switzerland, September 12-15, 2016. p. 452 - 455. DOI : 10.1109/ESSDERC.2016.7599683.Enabling High Frequency Reconfigurable Functions with Graphene
Lausanne, EPFL, 2016. DOI : 10.5075/epfl-thesis-6980.Hybrid phase-change — Tunnel FET (PC-TFET) switch with subthreshold swing < 10mV/decade and sub-0.1 body factor: Digital and analog benchmarking
2016. 2016 IEEE International Electron Devices Meeting (IEDM), San Francisco, CA, USA, 3-7 December 2016. p. 19.3.1 - 19.3.4. DOI : 10.1109/IEDM.2016.7838452.Investigation of the metal-insulator transition in VO2 for Electronic Switches with Sub-1mV/Decade Steep Subthreshold Slope
2016. 2016 IEEE Silicon Nanoelectronics Workshop (SNW), Honolulu, HI, USA, 12-13 June 2016. p. 180 - 181. DOI : 10.1109/SNW.2016.7578041.Near optimal graphene terahertz non-reciprocal isolator
Nature Communications. 2016. DOI : 10.1038/ncomms11216.Solid-gap resonators based on PVDF-TrFE
2016. 2016 IEEE Silicon Nanoelectronics Workshop (SNW), Honolulu, HI, USA, 12-13 June 2016. p. 72 - 73. DOI : 10.1109/SNW.2016.7577990.Switching Behavior Constraint in the Heterogate Electron–Hole Bilayer Tunnel FET: The Combined Interplay Between Quantum Confinement Effects and Asymmetric Configurations
IEEE Transactions on Electron Devices. 2016. DOI : 10.1109/TED.2016.2556083.Band-to-band tunneling distance analysis in the heterogate electron-hole bilayer tunnel field-effect transistor
Journal Of Applied Physics. 2016. DOI : 10.1063/1.4940741.Electrothermal actuation of vanadium dioxide for tunable capacitors and microwave filters with integrated microheaters
Sensors and Actuators A: Physical. 2016. DOI : 10.1016/j.sna.2016.01.027.Design and fabrication of high-k filled sub-100 nm gap resonators with embedded dielectric field effect transistor for ultra high frequency applications
2016. 2016 IEEE Silicon Nanoelectronics Workshop (SNW), Honolulu, HI, USA, 12-13 June 2016. p. 70 - 71. DOI : 10.1109/SNW.2016.7577989.Field-enhanced design of steep-slope VO2 switches for low actuation voltage
2016. ESSDERC 2016 - 46th European Solid-State Device Research Conference, Lausanne, Switzerland, 12-15 September 2016. p. 352 - 355. DOI : 10.1109/ESSDERC.2016.7599659.Tri-Band, Polarization-Independent Reflectarray at Terahertz Frequencies: Design, Fabrication, and Measurement
IEEE Transactions On Terahertz Science And Technology. 2016. DOI : 10.1109/Tthz.2016.2522301.Underlap counterdoping as an efficient means to suppress lateral leakage in the electron–hole bilayer tunnel FET
Semiconductor Science and Technology. 2016. DOI : 10.1088/0268-1242/31/4/045001.Vertical versus lateral tunneling FET non-volatile memory cell
2016. 2016 IEEE Silicon Nanoelectronics Workshop (SNW), Honolulu, HI, USA, 12-13 June 2016. p. 42 - 43. DOI : 10.1109/SNW.2016.7577976.Quantum Mechanical Confinement in the Fin Electron-Hole Bilayer Tunnel Field-Effect Transistor
IEEE Transactions on Electron Devices. 2016. DOI : 10.1109/Ted.2016.2574893.The Electron-Hole Bilayer TFET: Dimensionality Effects and Optimization
IEEE Transactions on Electron Devices. 2016. DOI : 10.1109/TED.2016.2557282.Double-Gate Negative-Capacitance MOSFET with PZT gate stack on Ultra-Thin Body SOI: an Experimentally Calibrated Simulation Study of Device Performance
IEEE Transactions on Electron Devices. 2016. DOI : 10.1109/Ted.2016.2616035.Modeling and simulation of low power ferroelectric non-volatile memory tunnel field effect transistors using silicon-doped hafnium oxide as gate dielectric
Solid-State Electronics. 2016. DOI : 10.1016/j.sse.2016.07.025.Graphene Quantum Capacitors for High Frequency Tunable Analog Applications
Nano Letters. 2016. DOI : 10.1021/acs.nanolett.5b05235.Reconfigurable electronics based on metal-insulator transition : steep-slope switches and high frequency functions enabled by Vanadium Dioxide
Lausanne, EPFL, 2016. DOI : 10.5075/epfl-thesis-6949.Vertical band-to-band tunneling based non-volatile memory with high-K gate stack and stable hysteresis characteristics up to 400K
2016. 2016 74th Annual Device Research Conference (DRC), Newark, DE, USA, 19-22 June 2016. p. 1 - 2. DOI : 10.1109/DRC.2016.7548493.Graphene for Nanoelectronic Applications
Lausanne, EPFL, 2015. DOI : 10.5075/epfl-thesis-6886.Fine Pitch 3D-TSV Based High Frequency Components for RF MEMS Applications
2015. IEEE Electronic Components and Technology Conference, San Diego, California, USA, May 26-29, 2015. p. 585 - 590. DOI : 10.1109/ECTC.2015.7159650.CMOS-compatible abrupt switches based on VO2 metal-insulator transition
2015. Ultimate Integration on Silicon, Bologna, Italy, January 26-28, 2015. p. 53 - 56. DOI : 10.1109/ULIS.2015.7063771.Graphene negative differential resistance (GNDR) circuit with enhanced performance at room temperature
2015. Device Research Conference (DRC), 2015 73rd Annual, Columbus, OH, USA, June 21-24, 2015. p. 267 - 268. DOI : 10.1109/DRC.2015.7175676.Performance evaluation of novel technologies for terahertz reflectarrays
2015. 2015 European Microwave Week, Paris, France, September, 6-11, 2015. p. 393 - 396. DOI : 10.1109/EuMIC.2015.7345152.Graphene Negative Differential Resistance Circuit With Voltage-Tunable High Performance at Room Temperature
IEEE Electron Device Letters. 2015. DOI : 10.1109/LED.2015.2445858.Spatial Variability in Large Area Single and Few-layer CVD Graphene
2015. Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon, Bologna, Italy, January 26-28, 2015.Tunable Capacitors and Microwave Filters Based on Vanadium Dioxide Metal-Insulator Transition
2015. 18th International Conference on Solid-State Sensors, Actuators and Microsystems Transducers 2015, Anchorage, Alaska, USA, June 21-25, 2015. p. 311 - 314. DOI : 10.1109/TRANSDUCERS.2015.7180923.Self-biased reconfigurable graphene stacks for terahertz plasmonics
Nature Communications. 2015. DOI : 10.1038/ncomms7334.Efficient quantum mechanical simulation of band-to-band tunneling
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Physica Status Solidi B-Basic Solid State Physics. 2015. DOI : 10.1002/pssb.201552269.Fabrication process and characterization of suspended graphene membranes for RF NEMS capacitive switches
Microelectronic Engineering. 2015. DOI : 10.1016/j.mee.2015.01.032.Graphene RF NEMS shunt switches for analog and digital phase shifters
2015. Transducers Conference, Anchorage, Alaska, US, June, 21-25, 2015. p. 2029 - 2032. DOI : 10.1109/TRANSDUCERS.2015.7181354.A capacitance-voltage model for DG-TFET
2015. IEEE Silicon Nanoelectronics Workshop, Kyoto, Japan, 14-15 June 2015. p. 1 - 2.Design, Fabrication and Characterization of Terahertz Reflectarrays Based on a Silicon Substrate
2015. International Conference on Metamaterials, Photonic Crystals and Plasmonics, New York, US, August, 4-7, 2015.Tunnel Field Effect Transistors : from Steep-Slope Electronic Switches to Energy Efficient Logic Applications
Lausanne, EPFL, 2015. DOI : 10.5075/epfl-thesis-6802.Modeling the imaginary branch in III-V tunneling devices: Effective mass vs k.p
2015. 2015 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Washington DC, USA, 9-11 September 2015. p. 273 - 276. DOI : 10.1109/SISPAD.2015.7292312.Negative Differential Resistance in Top-Gated Chemical Vapor Deposition Grown Graphene Transistors
2015. Graphene Conference, Bilbao, Spain, March 10-13, 2015.Comment on 'Germanium electron-hole bilayer tunnel field-effect transistors with a symmetrically arranged double gale'
Semiconductor Science and Technology. 2015. DOI : 10.1088/0268-1242/30/12/128001.Evaluation of graphene for terahertz reflectarray antennas
2015. Graphene Week 2015, Manchester, UK, June, 22-26, 2015.Response to Comment on Assessment of field-induced quantum confinement in heterogate germanium electron-hole bilayer tunnel field-effect transistor
Applied Physics Letters. 2015. DOI : 10.1063/1.4905866.Two dimensional quantum mechanical simulation of low dimensional tunneling devices
Solid-State Electronics. 2015. DOI : 10.1016/j.sse.2015.05.030.Practical Applications of Tunnel Field Effect Transistors
Lausanne, EPFL, 2015. DOI : 10.5075/epfl-thesis-6333.Compact modeling of DG-Tunnel FET for Verilog-A implementation
2015. ESSDERC 2015 - 45th European Solid-State Device Research Conference, Graz, Austria, 14-18 September 2015. p. 40 - 43. DOI : 10.1109/ESSDERC.2015.7324708.Steep-slope Metal-Insulator-Transition VO2 Switches with Temperature-Stable High ION
IEEE Electron Device Letters. 2015. DOI : 10.1109/LED.2015.2454535.Wafer-Level Hysteresis-Free Resonant Carbon Nanotube Transistors
Acs Nano. 2015. DOI : 10.1021/nn506817y.Fabrication of CMOS-compatible abrupt electronic switches based on vanadium dioxide
Microelectronic Engineering. 2015. DOI : 10.1016/j.mee.2015.03.055.Assessment of Pseudo-Bilayer Structures in the Heterogate Germanium Electron-Hole Bilayer Tunnel Field-Effect Transistor
Applied Physics Letters. 2015. DOI : 10.1063/1.4923467.Solid-gap wine-glass mode disks VB-FET resonators applied to biomass sensing
Microelectronic Engineering. 2015. DOI : 10.1016/j.mee.2015.03.005.Impact of Asymmetric Configurations on the Heterogate Germanium Electron-Hole Bilayer Tunnel Field-Effect Transistor Including Quantum Confinement
IEEE Transactions on Electron Devices. 2015. DOI : 10.1109/TED.2015.2476350.Carbon nanotube gas sensor array for multiplex analyte discrimination
Sensors And Actuators B-Chemical. 2015. DOI : 10.1016/j.snb.2014.10.117.Sensing with Advanced Computing Technology: Fin Field-Effect Transistors with High-k Gate Stack on Bulk Silicon
ACS Nano. 2015. DOI : 10.1021/nn5064216.Room-Temperature Negative Differential Resistance in Graphene Field Effect Transistors: Experiments and Theory
ACS Nano. 2015. DOI : 10.1021/nn5059437.Ultra Fine-Pitch TSV Technology for Ultra-Dense High-Q RF Inductors
2015. 2015 Symposium on VLSI Technology, Kyoto, Japan, June 15-19, 2015. p. T52 - T53. DOI : 10.1109/VLSIT.2015.7223700.Reversible supramolecular modification of surfaces
Lausanne, EPFL, 2015. DOI : 10.5075/epfl-thesis-6861.1T Capacitor-less DRAM cell based on asymmetric Tunnel FET design
IEEE Journal of the Electron Devices Society. 2014. DOI : 10.1109/JEDS.2014.2382759.Study of Fin-Tunnel FETs with doped pocket as Capacitor-less 1T DRAM
2014. SOI-3D-Subthreshold Microelectronics Technology Unified Conference (S3S), San Francisco, California, USA, December 6-9, 2014. DOI : 10.1109/S3S.2014.7028203.Single Crystal Silicon UHF Wine-Glass Ring Resonator with HfO2 Solid Dielectric Gap embedded in a Field Effect Transistor
40th Micro and Nano Engineering Conference, Lausanne, CH, September 22-26, 2014.Wearable Sensors for medical applications
CATRENE Scientific Committee Workshop 2014, Brussels, Belgium, 2014-02-04.Conformal Mapping Based DC Current Model For Double Gate Tunnel FETs
2014. 15th International Conference on Ultimate Integration on Silicon (ULIS), Stockholm ,Sweden, April 7-9, 2014. p. 85 - 88. DOI : 10.1109/ULIS.2014.6813922.High Performance, Vertically Stacked SiNW/Fin Based 3D FETs for Biosensing Applications
Lausanne, EPFL, 2014. DOI : 10.5075/epfl-thesis-6258.Junctionless nano-electro-mechanical resonant transistor
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Solid-State Electronics. 2014. DOI : 10.1016/j.sse.2014.04.012.Measurement of biased graphene stacks at terahertz: dynamic reconfiguration and hysteresis
2014. 8th European Conference on Antennas and Propagation (EuCAP), The Hague, The Netherlands, April, 6-11, 2014.Compact Modeling of Homojunction Tunnel FETs
2014. 21st International Conference on Mixed Design of Integrated Circuits and Systems (MIXDES)', u'21st International Conference on Mixed Design of Integrated Circuits and Systems (MIXDES). p. 54 - 57. DOI : 10.1109/MIXDES.2014.6872152.Electromagnetic Performance of RF NEMS Graphene Capacitive Switches
IEEE Transactions on Nanotechnology. 2014. DOI : 10.1109/TNANO.2013.2290945.Electrical characterization of high performance, liquid gated vertically stacked SiNW-based 3D FET biosensors
Sensors And Actuators B-Chemical. 2014. DOI : 10.1016/j.snb.2014.03.099.Analytical Compact Model in Verilog-A for Electrostatically Actuated Ohmic Switches
IEEE Transactions on Electron Devices. 2014. DOI : 10.1109/TED.2014.2318199.Junctionless Silicon Nanowire Resonator
IEEE Journal of the Electron Devices Society. 2014. DOI : 10.1109/JEDS.2013.2295246.Investigation of Partially Gated Si Tunnel FETs for Low Power Integrated Optical Sensing
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Carbon. 2014. DOI : 10.1016/j.carbon.2014.07.009.Gas sensing technology based on carbon nanotube arrays
Lausanne, EPFL, 2014. DOI : 10.5075/epfl-thesis-6281.Investigation of Tunnel Field-Effect Transistors as a Capacitor-less Memory Cell
Applied Physics Letters. 2014. DOI : 10.1063/1.4867527.Growth optimization of vanadium dioxide films on SiO2/Si substrates
2014. 40th Micro and Nano Engineering, Lausanne, Switzerland, September 22-26, 2014.Component design and testing for a miniaturised autonomous sensor based on a nanowire materials platform
2014. Conference on Smart Sensors, Actuators and MEMS within the SPIE EUROPE Symposium on Microtechnologies. p. 971 - 988. DOI : 10.1007/s00542-014-2100-4.Assessment of field-induced quantum confinement in heterogate germanium electron-hole bilayer tunnel field-effect transistor
Applied Physics Letters. 2014. DOI : 10.1063/1.4894088.Electromechanical design space exploration for electrostatically actuated ohmic switches using extended parallel plate compact model
Solid-State Electronics. 2014. DOI : 10.1016/j.sse.2014.06.030.The top-down fabrication of a 3D-integrated, fully CMOS-compatible FET biosensor based on vertically stacked SiNWs and FinFETs
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2014. 2014 IEEE 27th International Conference on Micro Electro Mechanical Systems (MEMS), San Francisco, CA, USA, 26-30 01 2014. p. 1063 - 1066. DOI : 10.1109/MEMSYS.2014.6765828.High-K Dielectric FinFETs on Si-Bulk for Ionic and Biological Sensing Integrated Circuits
Lausanne, EPFL, 2014. DOI : 10.5075/epfl-thesis-6134.Two Dimensional Quantum Mechanical Simulation of Low Dimensional Tunneling Devices
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2014. 72nd Device Research Conference, Santa Barbara, California, USA, June 22-25, 2014. p. 29 - 30. DOI : 10.1109/DRC.2014.6872284.Electron mobility extraction in triangular gate-all-around Si nanowire junctionless nMOSFETs with cross-section down to 5 nm
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Applied Physics Letters. 2014. DOI : 10.1063/1.4904026.Encapsulated Low Frequency Vibrating Body Field Effect Resonator
Lausanne, EPFL, 2013. DOI : 10.5075/epfl-thesis-5634.Horizontal growth of dense carbon nanotube membranes for interconnects and sensors
2013. Annual meeting of the GDR-I GNT: Graphene and Nanotubes Science and Applications, Ecully, France, January 23-27, 2012.Ultra low power NEMFET based logic
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2013. ISDRS 2013, Washington DC, USA, December 11-13, 2013.Tungsten Through Silicon Vias for 3D high quality factor embedded RF MEMS inductors
2013. 39th International Conference on Micro and Nano Engineering, London, UK, September 16-19, 2013.Mobility Extraction Assessment in GAA Si NW JL FETs with Cross-Section Down to 5 nm
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Micronarc Alpine Meeting, 4th edition, Villars-sur-Ollon, Switzerland, January 13-15, 2013.Gate-all-around buckled dual Si nanowire nMOSFETs on bulk Si for transport enhancement and digital logic
Microelectronic Engineering. 2013. DOI : 10.1016/j.mee.2013.02.003.Innovative Tunnel Field-Effect Transistor Architectures
Lausanne, EPFL, 2013. DOI : 10.5075/epfl-thesis-5691.Junctionless silicon nanowire transistors for the tunable operation of a highly sensitive, low power sensor
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IEEE Transactions on Electron Devices. 2013. DOI : 10.1109/TED.2013.2274198.Carbon Nanotube Precise Assembly for CMOS and NEMS Applications
Lausanne, EPFL, 2013. DOI : 10.5075/epfl-thesis-5651.Sustained Nano-Mechanical Oscillation of a Resonant-Body Transistor by Frequency-Modulated Heterodyne Phase-Locked-Loop
2013. 2013 Symposia on VLSI Technology and Circuits (2013 Silicon Nanoelectronics Workshop), Kyoto, Japan, June 9-14, 2013.Tunnel FET with non-uniform gate capacitance for improved device and circuit level performance
Solid-State Electronics. 2013. DOI : 10.1016/j.sse.2013.02.032.Nanoelectromechanical microwave switch based on graphene
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Lausanne, EPFL, 2013. DOI : 10.5075/epfl-thesis-5888.Functionalized 3D 7x20-array of vertically stacked SiNW FET for streptavidin sensing
2013. 2013 71st Annual Device Research Conference (DRC), Notre Dame, IN, USA, 23-26 06 2013. p. 1 - 2. DOI : 10.1109/DRC.2013.6633887.An innovative band-to-band tunneling analytical model and implications in compact modeling of tunneling-based devices
Applied Physics Letters. 2013. DOI : 10.1063/1.4821100.Silicon nanowires reliability and robustness investigation using AFM-based techniques
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IEEE Electron Device Letters. 2013. DOI : 10.1109/LED.2013.2257665.RF MEMS power sensors for ultra-low power wake-up circuit applications
2013. 43rd Solid-State Device Research Conference (ESSDERC), Bucharest, Romania, September 16-20, 2013. DOI : 10.1109/ESSDERC.2013.6818875.Understanding the Superlinear Onset of Tunnel-FET Output Characteristic
IEEE Electron Device Letters. 2012. DOI : 10.1109/LED.2012.2212175.Tunnel FET with non-uniform gate capacitance for improved device and circuit level performance
2012. ESSDERC 2012 - 42nd European Solid State Device Research Conference, Bordeaux, France, 17-21 09 2012. p. 161 - 164. DOI : 10.1109/ESSDERC.2012.6343358.Non-contact characterization of graphene surface impedance at micro and millimeter waves
Journal of Applied Physics. 2012. DOI : 10.1063/1.4728183.La récolte d’énergie pour les micro et nanosystèmes autonomes
Journal ElectroSuisse. 2012.TCAD Simulation of SOI TFETs and Calibration of Non-local Band-to-Band Tunneling Model
Microelectronic Engineering. 2012. DOI : 10.1016/j.mee.2012.07.077.Multi-gate Si nanowire MOSFETs : fabrication, strain engineering and transport analysis
Lausanne, EPFL, 2012. DOI : 10.5075/epfl-thesis-5507.Self-Assembled Nano-Electro-Mechanical Tri-state Carbon Nanotube Switches for Reconfigurable Integrated Circuits
2012. IEEE MEMS 2012, Paris, Jan. 29-Feb. 2, 2012. p. 188 - 191. DOI : 10.1109/MEMSYS.2012.6170148.Complementary Germanium Electron-Hole Bilayer Tunnel FET for Sub-0.5-V Operation
IEEE Electron Device Letters. 2012. DOI : 10.1109/LED.2011.2175898.Resonant-Body Silicon Nanowire Field Effect Transistor without Junctions
2012. 2012 IEEE International Electron Devices Meeting IEDM, San Francisco, USA, December 10-13, 2012. p. 15.2.1 - 15.2.4. DOI : 10.1109/IEDM.2012.6479046.In-situ grown horizontal carbon nanotube membranes for sensitive & selective gas sensing
LEA micro-engineering workshop, 11th edition, Arc-et-Senans, France, September 6-7, 2012.Vertically stacked Si nanostructures for biosensing applications
Microelectronic Engineering. 2012. DOI : 10.1016/j.mee.2012.03.017.Precise Alignment of Individual Carbon Nanotubes for Nanoelectronics
2012. 12th IEEE International Conference on Nanotechnology (IEEE-NANO). DOI : 10.1109/NANO.2012.6322187.RF MEMS Shunt Capacitive Switches Using AlN Compared to Si3N4 Dielectric
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IEEE Transactions on Nanotechnology. 2012. DOI : 10.1109/TNANO.2012.2205401.From All-Si Nanowire TFETs Towards III-V TFETs
Lausanne, EPFL, 2012. DOI : 10.5075/epfl-thesis-5534.A Novel Extraction Method and Compact Model for the Steepness Estimation of FDSOI TFET Lateral Junction
IEEE Electron Device Letters. 2012. DOI : 10.1109/LED.2011.2174027.Large-Scale Assembly of Tunable Resonant-Body Carbon Nanotube Transistors without Hysteresis
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Lausanne, EPFL, 2012. DOI : 10.5075/epfl-thesis-5276.Beyond Scaling : Physics and Modeling for Pushing the Frontiers of Low-Power Devices
Lausanne, EPFL, 2012. DOI : 10.5075/epfl-thesis-5504.Gate-All-Around Buckled Dual Si Nanowire nMOSFETs on Bulk Si for Transport Enhancement and Digital Logic Application
2012. 38th International Conference on Micro and Nano Engineering (MNE), Toulouse, France, September 16-20, 2012.On the Static and Dynamic Behavior of the Germanium Electron-Hole Bilayer Tunnel FET
IEEE Transactions on Electron Devices. 2012. DOI : 10.1109/Ted.2012.2211600.In-situ grown horizontal carbon nanotube membrane
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Applied Physics Letters. 2011. DOI : 10.1063/1.3569760.Miniature Sensor Node with Conformal Phased Array
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2011. MNE 11, Berlin, Germany, Sept. 19-23, 2011.Scalable conformal array for multi-gigabit body centric wireless communication
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2011. Device Research Conference (DRC 2011), Santa Barbara, USA, June 20-22, 2011.A Microfabricated 1-D Metamaterial Unit Cell Matched From DC to Millimeter-Waves
IEEE Microwave and Wireless Components Letters. 2011. DOI : 10.1109/LMWC.2011.2162617.Corner Effect and Local Volume Inversion in SiNW FETs
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Lausanne, EPFL, 2011. DOI : 10.5075/epfl-thesis-4824.Accumulation-Mode GAA Si NW nFET with sub-5 nm cross-section and high uniaxial tensile strain
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2011. 37th International Conference on Micro & Nano Engineering, Berlin, Germany, September 19-23, 2011.Self-Assembly of Doubly-Clamped/Cantilevered Carbon Nanotube Arrays by a Precise Positioning Method
2011. International Conference on the Science and Application of Nanotubes (NT'11), Cambridge, UK, July 11-16, 2011.In-IC Strategies for 3D Devices in Bulk Silicon
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2011. International Semiconductor Device Research Symposium (IEEE ISDRS, biennial), University of Maryland, College Park, MD, USA, December 7-9, 2011. p. 1 - 2. DOI : 10.1109/ISDRS.2011.6135148.Self-Aligned Double-Gate Suspended-Body Single-Walled Carbon Nanotube Field-Effect-Transistors
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2010. MNE 2010, Genoa, Italy, September 19-22, 2011.Demonstrations of Wireless Autonomous Sensors for Aeronautical Applications
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Applied Physics Letters. 2010. DOI : 10.1063/1.3525165.Abrupt switch based on internally combined Band-To-Band and Barrier Tunneling mechanisms
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Nanotechnology. 2010. DOI : 10.1088/0957-4484/22/2/025203.Three-level Stencil Alignment Fabrication of a High-k Gate Stack Organic Thin Film Transistor
36th International Conference on Micro & Nano Engineering (MNE), Genoa, Italy, September 19-22, 2010.Abrupt switch based on internally combined band-to-band and barrier tunneling mechanisms
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2010. Nanotech 2010, Anaheim, CA, USA.Nano-Electro-Mechanical Switches Based on Carbon Nanotubes Arrays
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IEEE Transactions on Electron Devices. 2010. DOI : 10.1109/TED.2010.2040939.Heterogeneous Integration for Novel Functionality
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IEEE Transactions on Advanced Packaging. 2010. DOI : 10.1109/TADVP.2010.2043101.The Hysteretic Ferroelectric Tunnel FET
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IEEE Journal of Solid-State Circuits. 2009. DOI : 10.1109/JSSC.2008.2007448.Ad-Hoc Wireless Sensor Networks For Exploration Of Solar-System Bodies
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2009. 23rd Eurosensors Conference, Lausanne, SWITZERLAND, Sep 06-09, 2009. p. 1411 - 1414. DOI : 10.1016/j.proche.2009.07.352.SWCNT/MWCNT Crossed Junction by Two-Step Dielectrophoresis
2008.Impact of lateral non-uniform doping and hot carrier degradation on capacitance behavior of high voltage MOSFETs
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IEEE Transactions on Computer-Aided Design of Integrated Circuits and Systems. 2008. DOI : 10.1109/TCAD.2008.2006076.Impact of Lateral Nonuniform Doping and Hot Carrier Injection on Capacitance Behavior of High Voltage MOSFETs
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2008. IEEE ESSDERC 2008, Edinburgh, Scotland, Sep. 15-19, 2008.New functionality and ultra low power: key opportunities for post-CMOS era
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2008. 26th International Conference on Microelectronics (MIEL 2008), Nis, Serbia, May 11-14, 2008. DOI : 10.1109/ICMEL.2008.4559282.Analytical Modeling of the Suspended-Gate FET and Design Insights for Low-Power Logic
IEEE Transactions on Electron Devices. 2008. DOI : 10.1109/TED.2007.911070.0-level Vacuum Packaging RT Process for MEMS Resonators
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Romanian Journal Of Information Science And Technology. 2008.Fabrication and Characterization of Gate-All-Around Silicon Nanowires on Bulk Silicon
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2008. 9th International Symposium of RF MEMS and RF Microsystem (MEMSWAVE), Heraklion (Greece), July 1-3, 2008.Hysteretic inverter-on-a-body-tied-wire based on less-than-10mV/decade abrupt punch-through impact ionization MOS (PIMOS) switch
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Lausanne, EPFL, 2008. DOI : 10.5075/epfl-thesis-4068.Nano-gap high quality factor thin film SOI MEM resonators
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2023. 45th Annual International Conference of the IEEE Engineering in Medicine and Biology Society (EMBC), Sydney Australia, July 24-27, 2023. DOI : 10.1109/EMBC40787.2023.10340131.Static and Dynamic Stochastic Analysis of a Temperature-Sensitive VO<sub>2</sub> Spiking Neuron
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2023. The ACM/IEEE 26th International Conference on Model-Driven Engineering Languages and Systems, Västerås, Sweden, October 1-6, 2023.Ultra-High Sensitivity Silicon Nanowire Array Biosensor Based on a Constant-Current Method for Continuous Real-Time pH and Protein Monitoring in Interstitial Fluid
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2019. 44th International Conference on Infrared, Millimeter, and Terahertz Waves (IRMMW-THz), Paris, FRANCE, Sep 01-06, 2019. DOI : 10.1109/IRMMW-THz.2019.8874271.Exploration of Negative Capacitance Devices and Technologies
Lausanne, EPFL, 2019. DOI : 10.5075/epfl-thesis-9340.Sub-Thermionic Scalable III-V Tunnel Field-Effect Transistors Integrated on Si (100)
2019. 65th IEEE Annual International Electron Devices Meeting (IEDM), San Francisco, CA, Dec 09-11, 2019. DOI : 10.1109/IEDM19573.2019.8993610.Monolithically integrated catalyst-free High Aspect Ratio InAs-On-Insulator (InAsOI) FinFETs for pH sensing
2019. 49th European Solid-State Device Research Conference (ESSDERC), Cracow, POLAND, Sep 23-26, 2019. p. 106 - 109. DOI : 10.1109/ESSDERC.2019.8901739.VO2 oscillators coupling for Neuromorphic Computation
2019. Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon (EUROSOI-ULIS), Grenoble, FRANCE, Apr 01-03, 2019. DOI : 10.1109/EUROSOI-ULIS45800.2019.9041875.Co-integrated Subthermionic 2D/2D WSe2/SnSe2 Vertical Tunnel FET and WSe2 MOSFET on same flake: towards a 2D/2D vdW Dual-Transport Steep Slope FET
2019. 65th IEEE Annual International Electron Devices Meeting (IEDM), San Francisco, CA, Dec 09-11, 2019. DOI : 10.1109/IEDM19573.2019.8993643.Capillary flow device for bio-fluid collection with semiconductor sensors
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2018. 48th European Solid-State Device Research Conference - ESSDERC 2018, 3-6 Sept. 2018, Dresden, Germany. p. 114 - 117. DOI : 10.1109/ESSDERC.2018.8486867.Gate Leakage Tunneling Impact on the InAs/GaSb Heterojunction Electron-Hole Bilayer Tunneling Field-Effect Transistor
IEEE Transactions on Electron Devices. 2018. DOI : 10.1109/TED.2018.2866123.A Review and Mathematical Treatment of Infinity on the Smith Chart, 3D Smith Chart and Hyperbolic Smith Chart
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Ieee Microwave And Wireless Components Letters. 2018. DOI : 10.1109/LMWC.2018.2854961.Steep Slope Transistors for Quantum Computing
2018. IEEE 2nd Electron Devices Technology and Manufacturing Conference - EDTM 2018, Kobe, Japan, 13-16 March 2018. p. 56 - 58. DOI : 10.1109/EDTM.2018.8421422.Low power analog frontend for ISFET sensor readout
2018. 17th International Meeting on Chemical Sensors - IMCS 2018, Vienna, Austria, 2018-07-15 - 2018-07-19. DOI : 10.5162/IMCS2018/FE.1.Design Considerations of Ferroelectric Properties for Negative Capacitance MOSFETs
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Nanotechnology. 2018. DOI : 10.1088/1361-6528/aaa590.MoS2/VO2 vdW heterojunction devices: Tunable rectifiers, photodiodes and field effect transistors
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Lausanne, EPFL, 2018. DOI : 10.5075/epfl-thesis-8849.Prospects for energy-efficient edge computing with integrated HfO2-based ferroelectric devices
2018. 26th IFIP/IEEE International Conference on Very Large Scale Integration (VLSI-SoC), Verona, ITALY, Oct 08-10, 2018. p. 180 - 183. DOI : 10.1109/VLSI-SoC.2018.8644809.Near Hysteresis-Free Negative Capacitance InGaAs Tunnel FETs with Enhanced Digital and Analog Figures of Merit below V-DD=400mV
2018. 64th IEEE Annual International Electron Devices Meeting (IEDM), San Francisco, CA, Dec 01-05, 2018. p. 13.4.1 - 13.4.4. DOI : 10.1109/IEDM.2018.8614583.Tunnel fet based non-volatile memory boosted by vertical band-to-band tunneling
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2018. 31st IEEE International Conference on Micro Electro Mechanical Systems (MEMS), Belfast, NORTH IRELAND, Jan 21-25, 2018. p. 1217 - 1220. DOI : 10.1109/MEMSYS.2018.8346782.Negative capacitance tunnel F£Ts: Experimental demonstration of outstanding simultaneous boosting of on-current, transconductance, overdrive, and swing
2018. 2017 Silicon Nanoelectronics Workshop, Kyoto, Japan, June 4-5, 2017. DOI : 10.23919/SNW.2017.8242270.All CMOS Integrated 3D-Extended Metal Gate ISFETs for pH and Multi-Ion (Na+, K+, Ca2+) sensing
2018. 64th IEEE Annual International Electron Devices Meeting (IEDM), San Francisco, CA, Dec 01-05, 2018. p. 12.1.1 - 12.1.4. DOI : 10.1109/IEDM.2018.8614668.The Future of Electronics: Silicon to Cloud Technologies
2018. 20th International Conference on Transparent Optical Networks (ICTON), Bucharest, ROMANIA, Jul 01-05, 2018. DOI : 10.1109/ICTON.2018.8473849.CMOS 3D-Extended Metal Gate ISFETs with Near Nernstian Ion Sensitivity
2018. 76th Device Research Conference (DRC), Santa Barbara, CA, Jun 24-27, 2018. DOI : 10.1109/DRC.2018.8442197.Computing with Ferroelectric FETs: Devices, Models, Systems, and Applications
2018. Proceedings Of The 2018 Design, Automation & Test In Europe Conference & Exhibition (Date), Dresden, GERMANY, Mar 19-23, 2018. p. 1289 - 1298. DOI : 10.23919/DATE.2018.8342213.Novel Digital and Radio Frequency Electronic Functions Enabled by Steep-Slope Phase-Change Devices
Lausanne, EPFL, 2018. DOI : 10.5075/epfl-thesis-8596.Capillary flow device for bio-fluid collection with semiconductor sensors
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Ieee Journal Of The Electron Devices Society. 2018. DOI : 10.1109/JEDS.2018.2817289.Lab on skin™: 3D monolithically integrated zero-energy micro/nanofludics and FD SOI ion sensitive FETs for wearable multi-sensing sweat applications
2017. 2017 IEEE International Electron Devices Meeting - IEDM 2017, San Francisco, CA, US, December 2-6, 2017. p. 18.1.1 - 18.1.4. DOI : 10.1109/IEDM.2017.8268413.Negative Capacitance Tunnel FETs: Experimental Demonstration of Outstanding Simultaneous Boosting of On-current, Transconductance, Overdrive, and Swing
Silicon Nanoelectronic Workshop, Kyoto, Japan, June 4-5, 2017.Negative Capacitance Tunnel FETs: Experimental Demonstration of Outstanding Simultaneous Boosting of On-current, Transconductance, Overdrive, and Swing
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Scientific Reports. 2017. DOI : 10.1038/s41598-017-12950-y.Micromechanical resonators with sub-micron gaps filled with high-k dielectrics
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IEEE Electron Device Letters. 2017. DOI : 10.1109/LED.2017.2734943.Modeling and optimization of Tunnel-FET architectures exploiting carrier gas dimensionality
Lausanne, EPFL, 2017. DOI : 10.5075/epfl-thesis-7587.Energy efficient computing and sensing in the Zettabyte era: From silicon to the cloud
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2017. 2017 Joint Conference of the European Frequency and Time Forum and IEEE International Frequency Control Symposium ((EFTF/IFC), BESANÇON, France, 9-13 July 2017. p. 805 - 806. DOI : 10.1109/FCS.2017.8089040.A Steep-Slope Transistor Combining Phase-Change and Band-to-Band-Tunneling to Achieve a sub-Unity Body Factor
Scientific Reports. 2017. DOI : 10.1038/s41598-017-00359-6.Negative Capacitance Field Effect Transistors; Capacitance Matching and non-Hysteretic Operation
2017. Solid-State Device Research Conference (ESSDERC), 2017 47th European, Leuven, Belgium, 11-14 Sept. 2017. DOI : 10.1109/ESSDERC.2017.8066596.Low Impedance ALD HfO2 Partially-Filled-Gap Flexural and Bulk MEMS Resonators Piezoresistively Detected for Distributed Mass Sensing
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IEEE Transactions on Electron Devices. 2017. DOI : 10.1109/TED.2017.2665527.Complementary black phosphorous FETs by workfunction engineering of pre-patterned Au and Ag embedded electrodes
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2016. 2016 IEEE SENSORS, Orlando, FL, USA, October 30th - November 3rd, 2016. DOI : 10.1109/ICSENS.2016.7808744.Graphene quantum capacitors for high-Q tunable LC-tanks for RF ICs
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IEEE Transactions on Electron Devices. 2016. DOI : 10.1109/Ted.2016.2616035.Heterogeneous Integration of Low Power pH FinFET sensors with Passive Capillary Microfluidics and miniaturized Ag/AgCl quasi-Reference Electrode
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Lausanne, EPFL, 2016. DOI : 10.5075/epfl-thesis-6980.Hybrid phase-change — Tunnel FET (PC-TFET) switch with subthreshold swing < 10mV/decade and sub-0.1 body factor: Digital and analog benchmarking
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2016. 2016 IEEE Silicon Nanoelectronics Workshop (SNW), Honolulu, HI, USA, 12-13 June 2016. p. 180 - 181. DOI : 10.1109/SNW.2016.7578041.Near optimal graphene terahertz non-reciprocal isolator
Nature Communications. 2016. DOI : 10.1038/ncomms11216.Solid-gap resonators based on PVDF-TrFE
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IEEE Transactions on Electron Devices. 2016. DOI : 10.1109/TED.2016.2556083.Field-enhanced design of steep-slope VO2 switches for low actuation voltage
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2016. 2016 74th Annual Device Research Conference (DRC), Newark, DE, USA, 19-22 June 2016. p. 1 - 2. DOI : 10.1109/DRC.2016.7548493.Electrothermal actuation of vanadium dioxide for tunable capacitors and microwave filters with integrated microheaters
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Lausanne, EPFL, 2016. DOI : 10.5075/epfl-thesis-6949.Tri-Band, Polarization-Independent Reflectarray at Terahertz Frequencies: Design, Fabrication, and Measurement
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Nano Letters. 2016. DOI : 10.1021/acs.nanolett.5b05235.Quantum Mechanical Confinement in the Fin Electron-Hole Bilayer Tunnel Field-Effect Transistor
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IEEE Electron Device Letters. 2015. DOI : 10.1109/LED.2015.2454535.Wafer-Level Hysteresis-Free Resonant Carbon Nanotube Transistors
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IEEE Transactions on Electron Devices. 2015. DOI : 10.1109/TED.2015.2476350.Large area suspended graphene for nano-mechanical devices
Physica Status Solidi B-Basic Solid State Physics. 2015. DOI : 10.1002/pssb.201552269.Ultra Fine-Pitch TSV Technology for Ultra-Dense High-Q RF Inductors
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2015. ESSDERC 2015 - 45th European Solid-State Device Research Conference, Graz, Austria, 14-18 September 2015. p. 40 - 43. DOI : 10.1109/ESSDERC.2015.7324708.Tunnel Field Effect Transistors : from Steep-Slope Electronic Switches to Energy Efficient Logic Applications
Lausanne, EPFL, 2015. DOI : 10.5075/epfl-thesis-6802.Efficient quantum mechanical simulation of band-to-band tunneling
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2015. International Conference on Metamaterials, Photonic Crystals and Plasmonics, New York, US, August, 4-7, 2015.Room-Temperature Negative Differential Resistance in Graphene Field Effect Transistors: Experiments and Theory
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IEEE Electron Device Letters. 2015. DOI : 10.1109/LED.2015.2445858.Fabrication of CMOS-compatible abrupt electronic switches based on vanadium dioxide
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2015. Graphene Conference, Bilbao, Spain, March 10-13, 2015.CMOS-compatible abrupt switches based on VO2 metal-insulator transition
2015. Ultimate Integration on Silicon, Bologna, Italy, January 26-28, 2015. p. 53 - 56. DOI : 10.1109/ULIS.2015.7063771.Sensing with Advanced Computing Technology: Fin Field-Effect Transistors with High-k Gate Stack on Bulk Silicon
ACS Nano. 2015. DOI : 10.1021/nn5064216.Reversible supramolecular modification of surfaces
Lausanne, EPFL, 2015. DOI : 10.5075/epfl-thesis-6861.Graphene negative differential resistance (GNDR) circuit with enhanced performance at room temperature
2015. Device Research Conference (DRC), 2015 73rd Annual, Columbus, OH, USA, June 21-24, 2015. p. 267 - 268. DOI : 10.1109/DRC.2015.7175676.Performance evaluation of novel technologies for terahertz reflectarrays
2015. 2015 European Microwave Week, Paris, France, September, 6-11, 2015. p. 393 - 396. DOI : 10.1109/EuMIC.2015.7345152.1T Capacitor-less DRAM cell based on asymmetric Tunnel FET design
IEEE Journal of the Electron Devices Society. 2014. DOI : 10.1109/JEDS.2014.2382759.Study of Fin-Tunnel FETs with doped pocket as Capacitor-less 1T DRAM
2014. SOI-3D-Subthreshold Microelectronics Technology Unified Conference (S3S), San Francisco, California, USA, December 6-9, 2014. DOI : 10.1109/S3S.2014.7028203.Single Crystal Silicon UHF Wine-Glass Ring Resonator with HfO2 Solid Dielectric Gap embedded in a Field Effect Transistor
40th Micro and Nano Engineering Conference, Lausanne, CH, September 22-26, 2014.Junctionless Silicon Nanowire Resonator
IEEE Journal of the Electron Devices Society. 2014. DOI : 10.1109/JEDS.2013.2295246.Growth optimization of vanadium dioxide films on SiO2/Si substrates
2014. 40th Micro and Nano Engineering, Lausanne, Switzerland, September 22-26, 2014.Component design and testing for a miniaturised autonomous sensor based on a nanowire materials platform
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Applied Physics Letters. 2014. DOI : 10.1063/1.4894088.Electromechanical design space exploration for electrostatically actuated ohmic switches using extended parallel plate compact model
Solid-State Electronics. 2014. DOI : 10.1016/j.sse.2014.06.030.Finfet with fully PH-responsive HfO2 as highly stable biochemical sensor
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2014. 8th European Conference on Antennas and Propagation (EuCAP), The Hague, The Netherlands, April, 6-11, 2014.Compact Modeling of Homojunction Tunnel FETs
2014. 21st International Conference on Mixed Design of Integrated Circuits and Systems (MIXDES)', u'21st International Conference on Mixed Design of Integrated Circuits and Systems (MIXDES). p. 54 - 57. DOI : 10.1109/MIXDES.2014.6872152.Electromagnetic Performance of RF NEMS Graphene Capacitive Switches
IEEE Transactions on Nanotechnology. 2014. DOI : 10.1109/TNANO.2013.2290945.High-K Dielectric FinFETs on Si-Bulk for Ionic and Biological Sensing Integrated Circuits
Lausanne, EPFL, 2014. DOI : 10.5075/epfl-thesis-6134.Partially gated lateral tunnel field effect transistor for optical applications
Applied Physics Letters. 2014. DOI : 10.1063/1.4904026.Analytical Compact Model in Verilog-A for Electrostatically Actuated Ohmic Switches
IEEE Transactions on Electron Devices. 2014. DOI : 10.1109/TED.2014.2318199.Electrical characterization of high performance, liquid gated vertically stacked SiNW-based 3D FET biosensors
Sensors And Actuators B-Chemical. 2014. DOI : 10.1016/j.snb.2014.03.099.Junctionless nano-electro-mechanical resonant transistor
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Solid-State Electronics. 2014. DOI : 10.1016/j.sse.2014.04.012.Conformal Mapping Based DC Current Model For Double Gate Tunnel FETs
2014. 15th International Conference on Ultimate Integration on Silicon (ULIS), Stockholm ,Sweden, April 7-9, 2014. p. 85 - 88. DOI : 10.1109/ULIS.2014.6813922.Electron mobility extraction in triangular gate-all-around Si nanowire junctionless nMOSFETs with cross-section down to 5 nm
Solid-State Electronics. 2014. DOI : 10.1016/j.sse.2014.04.007.Steep slope VO2 switches for wide-band (DC-40 GHz) reconfigurable electronics
2014. 72nd Device Research Conference, Santa Barbara, California, USA, June 22-25, 2014. p. 29 - 30. DOI : 10.1109/DRC.2014.6872284.High-yield, in-situ fabrication and integration of horizontal carbon nanotube arrays at the wafer scale for robust ammonia sensors
Carbon. 2014. DOI : 10.1016/j.carbon.2014.07.009.Wearable Sensors for medical applications
CATRENE Scientific Committee Workshop 2014, Brussels, Belgium, 2014-02-04.High Performance, Vertically Stacked SiNW/Fin Based 3D FETs for Biosensing Applications
Lausanne, EPFL, 2014. DOI : 10.5075/epfl-thesis-6258.The top-down fabrication of a 3D-integrated, fully CMOS-compatible FET biosensor based on vertically stacked SiNWs and FinFETs
Sensors and Actuators B: Chemical. 2014. DOI : 10.1016/j.snb.2013.11.123.Two Dimensional Quantum Mechanical Simulation of Low Dimensional Tunneling Devices
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Lausanne, EPFL, 2014. DOI : 10.5075/epfl-thesis-6281.Investigation of Tunnel Field-Effect Transistors as a Capacitor-less Memory Cell
Applied Physics Letters. 2014. DOI : 10.1063/1.4867527.Encapsulated Low Frequency Vibrating Body Field Effect Resonator
Lausanne, EPFL, 2013. DOI : 10.5075/epfl-thesis-5634.Horizontal growth of dense carbon nanotube membranes for interconnects and sensors
2013. Annual meeting of the GDR-I GNT: Graphene and Nanotubes Science and Applications, Ecully, France, January 23-27, 2012.Functionalized 3D 7x20-array of vertically stacked SiNW FET for streptavidin sensing
2013. 2013 71st Annual Device Research Conference (DRC), Notre Dame, IN, USA, 23-26 06 2013. p. 1 - 2. DOI : 10.1109/DRC.2013.6633887.FinFET integrated low-power circuits for enhanced sensing applications
Sensors and Actuators B: Chemical. 2013. DOI : 10.1016/j.snb.2013.06.031.High-k dielectric FinFETs towards Sensing Integrated Circuits
2013. 14th International Conference on Ultimate Integration on Silicon (ULIS). p. 73 - 76. DOI : 10.1109/ULIS.2013.6523494.Mobility Extraction Assessment in GAA Si NW JL FETs with Cross-Section Down to 5 nm
2013. 14th International Conference on Ultimate Integration on Silicon (ULIS). p. 106 - 109. DOI : 10.1109/ULIS.2013.6523512.Large-scale, in-situ integration of horizontal carbon nanotube arrays into gas sensing devices
Micronarc Alpine Meeting, 4th edition, Villars-sur-Ollon, Switzerland, January 13-15, 2013.Gate-all-around buckled dual Si nanowire nMOSFETs on bulk Si for transport enhancement and digital logic
Microelectronic Engineering. 2013. DOI : 10.1016/j.mee.2013.02.003.Innovative Tunnel Field-Effect Transistor Architectures
Lausanne, EPFL, 2013. DOI : 10.5075/epfl-thesis-5691.Junctionless silicon nanowire transistors for the tunable operation of a highly sensitive, low power sensor
Sensors and Actuators B: Chemical. 2013. DOI : 10.1016/j.snb.2013.03.028.Carbon Nanotube Precise Assembly for CMOS and NEMS Applications
Lausanne, EPFL, 2013. DOI : 10.5075/epfl-thesis-5651.RF MEMS power sensors for ultra-low power wake-up circuit applications
2013. 43rd Solid-State Device Research Conference (ESSDERC), Bucharest, Romania, September 16-20, 2013. DOI : 10.1109/ESSDERC.2013.6818875.Tunneling and Occupancy Probabilities: How Do They Affect Tunnel-FET Behavior?
IEEE Electron Device Letters. 2013. DOI : 10.1109/LED.2013.2257665.Quantum Mechanical Study of the Germanium Electron-Hole Bilayer Tunnel FET
IEEE Transactions on Electron Devices. 2013. DOI : 10.1109/TED.2013.2274198.Tunnel FET with non-uniform gate capacitance for improved device and circuit level performance
Solid-State Electronics. 2013. DOI : 10.1016/j.sse.2013.02.032.Nanoelectromechanical microwave switch based on graphene
2013. 2013 14th International Conference on Ultimate Integration on Silicon (ULIS), Coventry, United Kingdom, 19-21 03 2013. p. 189 - 192. DOI : 10.1109/ULIS.2013.6523516.Sustained Nano-Mechanical Oscillation of a Resonant-Body Transistor by Frequency-Modulated Heterodyne Phase-Locked-Loop
2013. 2013 Symposia on VLSI Technology and Circuits (2013 Silicon Nanoelectronics Workshop), Kyoto, Japan, June 9-14, 2013.Tungsten Through Silicon Vias for 3D high quality factor embedded RF MEMS inductors
2013. 39th International Conference on Micro and Nano Engineering, London, UK, September 16-19, 2013.An innovative band-to-band tunneling analytical model and implications in compact modeling of tunneling-based devices
Applied Physics Letters. 2013. DOI : 10.1063/1.4821100.Ferroelectric tunnel fet switch and memory
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2013. 2013 IEEE International Symposium on Circuits and Systems (ISCAS), Beijing, China, 19-23 05 2013. p. 566 - 569. DOI : 10.1109/ISCAS.2013.6571905.A study on 1T Capacitor-less Tunnel FET DRAM Exploiting Ungated Body
2013. ISDRS 2013, Washington DC, USA, December 11-13, 2013.Silicon nanowires reliability and robustness investigation using AFM-based techniques
2013. DOI : 10.1117/12.2031229.Towards Nanomechanics and Nanoelectronics on a Single Chip
Lausanne, EPFL, 2013. DOI : 10.5075/epfl-thesis-5888.Large-Scale Assembly of Tunable Resonant-Body Carbon Nanotube Transistors without Hysteresis
2012. IEEE International Electron Devices Meeting IEDM, San Francisco, USA, Dec 10-13, 2012. p. 15.3.1 - 15.3.4. DOI : 10.1109/IEDM.2012.6479047.Accumulation-mode gate-all-around Si nanowire nMOSFETs with sub-5 nm cross-section and high uniaxial tensile strain
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Solid-State Electronics. 2012. DOI : 10.1016/j.sse.2012.04.022.Negative Capacitance Transistor
Lausanne, EPFL, 2012. DOI : 10.5075/epfl-thesis-5276.Beyond Scaling : Physics and Modeling for Pushing the Frontiers of Low-Power Devices
Lausanne, EPFL, 2012. DOI : 10.5075/epfl-thesis-5504.Nanomechanical Silicon Resonators with Intrinsic Tunable Gain and Sub-nW Power Consumption
ACS Nano. 2012. DOI : 10.1021/nn203517w.Determination of minimum conductivity of graphene from contactless microwaves measurements
2012. IEEE NANO 2012 - 12th International Conference on Nanotechnology, Birmingham, UK, August, 20-23, 2012. DOI : 10.1109/NANO.2012.6322060.Organic half-wave rectifier fabricated by stencil lithography on flexible substrate
Microelectronic Engineering. 2012. DOI : 10.1016/j.mee.2012.07.110.Multi-gate Si nanowire MOSFETs : fabrication, strain engineering and transport analysis
Lausanne, EPFL, 2012. DOI : 10.5075/epfl-thesis-5507.Self-Assembled Nano-Electro-Mechanical Tri-state Carbon Nanotube Switches for Reconfigurable Integrated Circuits
2012. IEEE MEMS 2012, Paris, Jan. 29-Feb. 2, 2012. p. 188 - 191. DOI : 10.1109/MEMSYS.2012.6170148.Complementary Germanium Electron-Hole Bilayer Tunnel FET for Sub-0.5-V Operation
IEEE Electron Device Letters. 2012. DOI : 10.1109/LED.2011.2175898.Resonant-Body Silicon Nanowire Field Effect Transistor without Junctions
2012. 2012 IEEE International Electron Devices Meeting IEDM, San Francisco, USA, December 10-13, 2012. p. 15.2.1 - 15.2.4. DOI : 10.1109/IEDM.2012.6479046.In-situ grown horizontal carbon nanotube membranes for sensitive & selective gas sensing
LEA micro-engineering workshop, 11th edition, Arc-et-Senans, France, September 6-7, 2012.Vertically stacked Si nanostructures for biosensing applications
Microelectronic Engineering. 2012. DOI : 10.1016/j.mee.2012.03.017.Precise Alignment of Individual Carbon Nanotubes for Nanoelectronics
2012. 12th IEEE International Conference on Nanotechnology (IEEE-NANO). DOI : 10.1109/NANO.2012.6322187.Nanoelectronics: Ferroelectric devices show potential
Nature Nanotechnology. 2012. DOI : 10.1038/nnano.2012.10.Multigate Buckled Self-Aligned Dual Si Nanowire MOSFETs on Bulk Si for High Electron Mobility
IEEE Transactions on Nanotechnology. 2012. DOI : 10.1109/TNANO.2012.2205401.TCAD Simulation of SOI TFETs and Calibration of Non-local Band-to-Band Tunneling Model
Microelectronic Engineering. 2012. DOI : 10.1016/j.mee.2012.07.077.From All-Si Nanowire TFETs Towards III-V TFETs
Lausanne, EPFL, 2012. DOI : 10.5075/epfl-thesis-5534.RF MEMS Shunt Capacitive Switches Using AlN Compared to Si3N4 Dielectric
Journal of Microelectromechanical Systems. 2012. DOI : 10.1109/JMEMS.2012.2203101.Gate-All-Around Buckled Dual Si Nanowire nMOSFETs on Bulk Si for Transport Enhancement and Digital Logic Application
2012. 38th International Conference on Micro and Nano Engineering (MNE), Toulouse, France, September 16-20, 2012.Experimental confirmation of temperature dependent negative capacitance in ferroelectric field effect transistor
Applied Physics Letters. 2012. DOI : 10.1063/1.4704179.On the Static and Dynamic Behavior of the Germanium Electron-Hole Bilayer Tunnel FET
IEEE Transactions on Electron Devices. 2012. DOI : 10.1109/Ted.2012.2211600.Non-contact characterization of graphene surface impedance at micro and millimeter waves
Journal of Applied Physics. 2012. DOI : 10.1063/1.4728183.Local volume depletion/accumulation in GAA Si nanowire junctionless nMOSFETs
IEEE Transactions on Electron Devices. 2012. DOI : 10.1109/TED.2012.2220363.A Novel Extraction Method and Compact Model for the Steepness Estimation of FDSOI TFET Lateral Junction
IEEE Electron Device Letters. 2012. DOI : 10.1109/LED.2011.2174027.New Tunnel-FET Architecture with Enhanced Ion and Improved Miller Effect for Energy Efficient Switching
2012. 70th Device Research Conference, State College, PA, USA, June 18-20, 2012. p. 131 - 132. DOI : 10.1109/DRC.2012.6256999.Single Active Nanoelectromechanical Tuning Fork Front-End Radio-Frequency Receiver
Nanotechnology. 2012. DOI : 10.1088/0957-4484/23/22/225501.In-situ grown horizontal carbon nanotube membrane
Microelectronic Engineering. 2012. DOI : 10.1016/j.mee.2012.05.017.High-Q 3D Embedded Inductors using TSV for RF MEMS Tunable Bandpass Filters (4.65-6.8 GHz)
2012. 42nd European Microwave Conference, Amsterdam, Netherlands. p. 822 - 825.Self-Aligned Lateral Dual-Gate Suspended-Body Single-Walled Carbon Nanotube Field-Effect Transistors
Applied Physics Letters. 2012. DOI : 10.1063/1.3682085.Phase-locked loop based on nanoelectromechanical resonant-body field effect transistor
Applied Physics Letters. 2012. DOI : 10.1063/1.4758991.Understanding the Superlinear Onset of Tunnel-FET Output Characteristic
IEEE Electron Device Letters. 2012. DOI : 10.1109/LED.2012.2212175.Streched organic transistors maintain mobility on flexible substrates
Microelectronic Engineering. 2012. DOI : 10.1016/j.mee.2012.07.080.The electron–hole bilayer tunnel FET
Solid-State Electronics. 2012. DOI : 10.1016/j.sse.2012.04.016.Tunnel FET with non-uniform gate capacitance for improved device and circuit level performance
2012. ESSDERC 2012 - 42nd European Solid State Device Research Conference, Bordeaux, France, 17-21 09 2012. p. 161 - 164. DOI : 10.1109/ESSDERC.2012.6343358.La récolte d’énergie pour les micro et nanosystèmes autonomes
Journal ElectroSuisse. 2012.Guardian Angels for a Smarter Life: Enabling a Zero-Power Technological Platform for Autonomous Smart Systems
2011. 2nd European Future Technologies Conference and Exhibition (FET), Budapest, HUNGARY, May 04-06, 2011. p. 43 - 46. DOI : 10.1016/j.procs.2011.12.016.A tunneling field-effect transistor exploiting internally combined band-to-band and barrier tunneling mechanisms
Applied Physics Letters. 2011. DOI : 10.1063/1.3569760.Miniature Sensor Node with Conformal Phased Array
Radioengineering. 2011.A Microfabricated 1-D Metamaterial Unit Cell Matched From DC to Millimeter-Waves
IEEE Microwave and Wireless Components Letters. 2011. DOI : 10.1109/LMWC.2011.2162617.Corner Effect and Local Volume Inversion in SiNW FETs
Ieee Transactions On Nanotechnology. 2011. DOI : 10.1109/TNANO.2010.2080284.Modeling the Temperature Dependence of Fe-FET Static Characteristics Based on Landau's Theory
IEEE Transactions on Electron Devices. 2011. DOI : 10.1109/TED.2011.2160868.Integration of Engineered Source and Drain Extensions in Double Gate Mosfet with Sub-32nm Channel Length
Lausanne, EPFL, 2011. DOI : 10.5075/epfl-thesis-4824.Horizontally and on-site grown carbon nanotube membrane for sensitive and selective gas sensing
2011. 37th International Conference on Micro & Nano Engineering, Berlin, Germany, September 19-23, 2011.Self-Assembly of Doubly-Clamped/Cantilevered Carbon Nanotube Arrays by a Precise Positioning Method
2011. International Conference on the Science and Application of Nanotubes (NT'11), Cambridge, UK, July 11-16, 2011.Resist-assisted assembly of single-walled carbon nanotube devices with nanoscale precision
Carbon. 2011. DOI : 10.1016/j.carbon.2011.12.006.Uniaxially tensile strained accumulation-mode gate-all-around Si nanowire nMOSFETs
2011. 69th annual IEEE Device Research Conference (IEEE DRC), Santa Barbara, California, USA, 20-22 June 2011. p. 145 - 146. DOI : 10.1109/DRC.2011.5994458.Floating-potential self-assembly of singe-walled carbon nanotube field effect transistors by ac-dielectrophoresis
Microelectronic Engineering. 2011. DOI : 10.1016/j.mee.2011.01.026.Self-Aligned Double-Gate Suspended-Body Single-Walled Carbon Nanotube Field-Effect-Transistors
2011. ESSDERC 11, Helsinki, Finland, Sept. 12-16, 2011. p. 315 - 318. DOI : 10.1109/ESSDERC.2011.6044171.Ultra low power: Emerging devices and their benefits for integrated circuits
2011. 2011 IEEE International Electron Devices Meeting (IEDM), Washington, DC, USA, 5-7 December 2011. p. 16.1.1 - 16.1.4. DOI : 10.1109/IEDM.2011.6131563.Tunneling path impact on semi-classical numerical simulations of TFET devices
2011. 2011 12th International Conference on Ultimate Integration on Silicon (ULIS), Cork, Ireland, 14-16 03 2011. p. 1 - 4. DOI : 10.1109/ULIS.2011.5758002.Ferroelectric Field Effect Transistor for Memory and Switch Applications
Lausanne, EPFL, 2011. DOI : 10.5075/epfl-thesis-4990.Electron-hole bilayer tunnel FET for steep subthreshold swing and improved ON current
2011. ESSDERC 2011 - 41st European Solid State Device Research Conference, Helsinki, Finland, September 12-16, 2011. p. 259 - 262. DOI : 10.1109/ESSDERC.2011.6044185.Tunnel field-effect transistors as energy-efficient electronic switches
Nature. 2011. DOI : 10.1038/nature10679.SWNT array resonant gate MOS transistor
Nanotechnology. 2011. DOI : 10.1088/0957-4484/22/5/055204.Organic Thin-Film Transistors and Circuits Fabricated by Stencil Lithography on Full-Wafer Flexible Substrates
Lausanne, EPFL, 2011. DOI : 10.5075/epfl-thesis-5102.Lateral Gate Suspended-Body Carbon Nanotube Field-Effect-Transistors with Sub-100nm Air Gap by Precise Positioning Method
2011. Device Research Conference (DRC 2011), Santa Barbara, USA, June 20-22, 2011.Effect of the choice of the tunnelling path on semi-classical numerical simulations of TFET devices
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Microelectronic Engineering. 2011. DOI : 10.1016/j.mee.2011.02.030.Self-Aligned Double-Gate Suspended-Body Carbon Nanotube Field-Effect transistors For RF Applications
2011. Transducers’11, Beijing, China, June 5-9, 2011. p. 2730 - 2733. DOI : 10.1109/TRANSDUCERS.2011.5969810.Carbon Nanotube Crossed Junction by Two Step Dielectrophoresis
Journal Of Nanoscience And Nanotechnology. 2011. DOI : 10.1166/jnn.2011.4116.In-IC Strategies for 3D Devices in Bulk Silicon
Lausanne, EPFL, 2011. DOI : 10.5075/epfl-thesis-4864.Accumulation-Mode GAA Si NW nFET with sub-5 nm cross-section and high uniaxial tensile strain
2011. The 41st European Solid-State Device Research Conference (IEEE ESSDERC), Helsinki, Finland, 12-16 Sep. 2011. p. 311 - 314. DOI : 10.1109/ESSDERC.2011.6044172.An Improved Precise Positioning Method for Self-Assembly of Lateral-Gate Carbon Nanotube Field-Effect-Transistors
2011. MNE 11, Berlin, Germany, Sept. 19-23, 2011.Scalable conformal array for multi-gigabit body centric wireless communication
2011. 5th International Symposium on Medical Information & Communication Technology (ISMICT), 2011, Montreux, Switzerland, March 27-30, 2011. p. 74 - 78. DOI : 10.1109/ISMICT.2011.5759800.Local stressors to accommodate 1.2 to 5.6 GPa uniaxial tensile stress in suspended gate-all-around Si nanowire nMOSFETs by elastic local buckling
2011. International Semiconductor Device Research Symposium (IEEE ISDRS, biennial), University of Maryland, College Park, MD, USA, December 7-9, 2011. p. 1 - 2. DOI : 10.1109/ISDRS.2011.6135148.FinFET for high sensitivity ion and biological sensing applications
Microelectronic Engineering. 2011. DOI : 10.1016/j.mee.2010.12.064.Self-Aligned Back-Gated Suspended Body Single-Walled Carbon Nanotube Field-Effect-Transistors Fabricated by High-Precision Positioning Method
2011. VLSI-TSA 2011, Hsinchu, Taiwan, April 25-27, 2011.RF-MEMS switches with AlN dielectric and their applications
International Journal of Microwave and Wireless Technologies. 2011. DOI : 10.1017/S175907871100064X.Integration for All Configurations
IEEE Microwave Magazine. 2011. DOI : 10.1109/MMM.2011.942700.Tunnel-FET architecture with improved performance due to enhanced gate modulation of the tunneling barrier
2011. 2011 69th Annual Device Research Conference (DRC), Santa Barbara, CA, USA, June 20-22, 2011. p. 111 - 112. DOI : 10.1109/DRC.2011.5994440.The Vibrating Body Transistor
IEEE Transactions on Electron Devices. 2011. DOI : 10.1109/TED.2011.2147786.Floating-Potential Self-Assembly of Singe-Walled Carbon Nanotube Transistors by Ac-Dielectrophoresis
2010. MNE 2010, Genoa, Italy, September 19-22, 2011.Demonstrations of Wireless Autonomous Sensors for Aeronautical Applications
2010. Smart System Integration (SSI), Como (Italy), March 23-24, 2010.Nano-Electro-Mechanical vibrating body FET resonator for high frequency integrated oscillators
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Solid-State Electronics. 2010. DOI : 10.1016/j.sse.2010.04.019.Active multi gate micro-electro-mechanical device with built-in transistor
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Microelectronic Engineering. 2010. DOI : 10.1016/j.mee.2009.12.036.A quasi-analytical model for nanowire FETs with arbitrary polygonal cross section
Solid-State Electronics. 2010. DOI : 10.1016/j.sse.2010.04.039.Nano-Electro-Mechanical Switches Based on Carbon Nanotubes Arrays
Lausanne, EPFL, 2010. DOI : 10.5075/epfl-thesis-4774.Carbon Nanotube Electromechanical Devices for Radio Frequency Applications
Lausanne, EPFL, 2010. DOI : 10.5075/epfl-thesis-4800.Electronic devices: Nanowire transistors made easy
Nature Nanotechnology. 2010. DOI : 10.1038/nnano.2010.38.The high-mobility bended n-channel silicon nanowire transistor
IEEE Transactions on Electron Devices. 2010. DOI : 10.1109/TED.2010.2040939.Heterogeneous Integration for Novel Functionality
2010. 3D System Integration Conference (3DIC), Munic, Germany, November 16-18, 2010. p. 1 - 19. DOI : 10.1109/3DIC.2010.5751423.Electrical modeling and design of a wafer-level package for MEM resonators
IEEE Transactions on Advanced Packaging. 2010. DOI : 10.1109/TADVP.2010.2043101.The Hysteretic Ferroelectric Tunnel FET
IEEE Transactions on Electron Devices. 2010. DOI : 10.1109/TED.2010.2079531.Tunable MEMS capacitors using vertical carbon nanotube arrays grown on metal lines
Nanotechnology. 2010. DOI : 10.1088/0957-4484/22/2/025203.Three-level Stencil Alignment Fabrication of a High-k Gate Stack Organic Thin Film Transistor
36th International Conference on Micro & Nano Engineering (MNE), Genoa, Italy, September 19-22, 2010.Abrupt switch based on internally combined band-to-band and barrier tunneling mechanisms
2010. 40th European Solid-State Device Research Conference (ESSDERC)/36th European Solid-State Circuits Conference (ESSCIRC), Seville, SPAIN, Sep 14-16, 2010. p. 234 - 239. DOI : 10.1016/j.sse.2011.06.035.Asymmetrically strained all-silicon multi-gate n-Tunnel FETs
Solid-State Electronics. 2010. DOI : 10.1016/j.sse.2010.04.037.Active Microelectromechanical Resonator : The Vibrating Body Field Effect Transistor
Lausanne, EPFL, 2010. DOI : 10.5075/epfl-thesis-4673.Capacitive nanoelectromechanical switch based on suspended carbon nanotube array
Applied Physics Letters. 2010. DOI : 10.1063/1.3525165.Vibrating Body Transistors: Enabling Fin-FET Nano-Electro-Mechanical Resonators
2010. 2010 IEEE International Frequency Control Symposium, New Port Beach, CA, Jun 01-04, 2010. p. 333 - 333. DOI : 10.1109/FREQ.2010.5556318.Tunable Electromechanical Resonator Based On Carbon Nanotube Array Suspended Gate Field Effect Transistor (Cnt-Sgfet)
2010. 23rd IEEE International Conference on Micro Electro Mechanical Systems (MEMS 2010), Hong Kong, PEOPLES R CHINA, Jan 24-28, 2010. p. 112 - 115. DOI : 10.1109/MEMSYS.2010.5442552.Test structure and method for the experimental investigation of internal voltage amplification and surface potential of ferroelectric MOSFETs
2010. 40th European Solid-State Device Research Conference (ESSDERC)/36th European Solid-State Circuits Conference (ESSCIRC), Seville, SPAIN, Sep 14-16, 2010. p. 151 - 156. DOI : 10.1016/j.sse.2011.06.038.Resonant-Body Fin-FETs with sub-nW power consumption
2010. International Electron Devices Meeting (IEDM), San Francisco, CA, Dec 06-08, 2010. p. 7.6.1 - 7.6.4. DOI : 10.1109/IEDM.2010.5703318.Organic Thin Film Transistors on Flexible Polyimide Substrates Fabricated by Full Wafer Stencil Lithography
Sensors and Actuators A: Physical. 2010. DOI : 10.1016/j.sna.2010.04.016.The Curie temperature as a key design parameter of ferroelectric Field Effect Transistors
2010. ESSDERC 2010 - 40th European Solid State Device Research Conference, Sevilla, Spain, September 14-16, 2010. p. 218 - 221. DOI : 10.1109/ESSDERC.2010.5618386.Metal-Ferroelectric-Metal-Oxide-Semiconductor Field Effect Transistor with Sub-60mV/decade Subthreshold Swing and Internal Voltage Amplification
2010. International Electron Devices Meeting (IEDM), San Francisco, CA, Dec 06-08, 2010. p. 16.3.1 - 16.3.4. DOI : 10.1109/IEDM.2010.5703374.Simulation of Double-Gate Silicon Tunnel FETs with a High-k Gate Dielectric
Lausanne, EPFL, 2010. DOI : 10.5075/epfl-thesis-4729.RF NEM capacitive switch based on dense horizontal arrays of CNTs
2010. p. 143 - 144. DOI : 10.1109/DRC.2010.5551878.Wafer Level Assembly of Single-Walled Carbon Nanotube Arrays with Precise Positioning
2010. Nanotech 2010, Anaheim, CA, USA.Tunable band-stop filter based on single RF MEMS capacitive shunt switch with meander arm inductance
Solid-State Electronics. 2010. DOI : 10.1016/j.sse.2010.04.030.Silicon nanowires with lateral uniaxial tensile stress profiles for high electron mobility gate-all-around MOSFETs
Microelectronic Engineering. 2010. DOI : 10.1016/j.mee.2009.11.024.Carbon nanotube vertical membranes for electrostatically actuated micro-electro-mechanical devices
Microelectronic Engineering. 2010. DOI : 10.1016/j.mee.2009.10.021.An experimental investigation of the surface potential in ferroelectric P(VDF-TrFE) FETs
2010. 35th International Conference on Micro-and Nano-Engineering, Ghent, BELGIUM, Sep 28-Oct 01, 2009. p. 1607 - 1609. DOI : 10.1016/j.mee.2009.10.047.Abrupt switch based on internally combined Band-To-Band and Barrier Tunneling mechanisms
2010. ESSDERC 2010 - 40th European Solid State Device Research Conference, Sevilla, Spain, September 14-16, 2010. p. 353 - 356. DOI : 10.1109/ESSDERC.2010.5618215.RF MEMS Switches for Wide-band (5 - 40 GHz), Tuneable Filters and DMTL Phase Shifters
Lausanne, EPFL, 2010. DOI : 10.5075/epfl-thesis-4737.Non-hysteretic ferroelectric tunnel FET with improved conductance at Curie temperature
2010. 2010 68th Annual Device Research Conference (DRC), Notre Dame, IN, USA, June 21-23, 2010. p. 67 - 68. DOI : 10.1109/DRC.2010.5551937.Dipole antenna and distributed MEMS phase shifter fully integrated in a single wafer process for beam steering applications
Microelectronic Engineering. 2010. DOI : 10.1016/j.mee.2009.10.009.Ferroelectric transistors with improved characteristics at high temperature
Applied Physics Letters. 2010. DOI : 10.1063/1.3467471.Ultra-Sensitive Capacitive Detection Based on SGMOSFET Compatible With Front-End CMOS Process
IEEE Journal of Solid-State Circuits. 2009. DOI : 10.1109/JSSC.2008.2007448.Ad-Hoc Wireless Sensor Networks For Exploration Of Solar-System Bodies
Acta Astronautica. 2009. DOI : 10.1016/j.actaastro.2008.11.012.A study of polarization effects in metal-ferroelectric-oxide-semiconductor capacitors
2009. 32nd International Semiconductor Conference, Sinaia, ROMANIA, Oct 12-14, 2009. p. 517 - 520. DOI : 10.1109/SMICND.2009.5336660.Investigation of bias-dependent series resistances and barrier height in Double Gate Schottky MOSFETs
2009. IEEE International SOI Conference 2009, Foster City, CA, Oct 05-08, 2009. p. 131 - 132. DOI : 10.1109/SOI.2009.5318738.Double-Gate Pentacene TFTs with Improved Control in Subthreshold Region
2009. 39th European Solid-State Device Research Conference (ESSDERC), Athens, Greece, September 14-18, 2009. p. 205 - 208. DOI : 10.1109/ESSDERC.2009.5331352.Lateral Strain Profile as Key Technology Booster for All-Silicon Tunnel FETs
IEEE Electron Device Letters. 2009. DOI : 10.1109/LED.2009.2018127.Tunable band-stop filter based on single RF MEMS capacitive shunt switch with meander arm inductance
2009. 39th European Solid-State Device Research Conference (ESSDERC), Athens, Greece, September 15-19, 2009. p. 331 - 334. DOI : 10.1109/ESSDERC.2009.5331304.A Study of Deterministic Positioning of Carbon Nanotubes by Dielectrophoresis
Journal of Electronic Materials. 2009. DOI : 10.1007/s11664-009-0797-0.MEMS technology for Radar front end modules.
2009. International Radar Conference - Surveillance for a Safer World, 2009. RADAR, October 12-16, 2009.High-quality factor MEMS based oscillator: Silicon 9 MHz oscillator with low phase noise and high quality factor
2009. 16th International Conference Mixed Design of Integrated Circuits and Systems, Lodz, POLAND, Jun 25-27, 2009. p. 276 - 281.Self-sustained Low Power Oscillator Based on Vibrating Body Field Effect Transistor
2009. IEEE International Electron Devices Meeting (IEDM 2009), Baltimore, MD, Dec 07-09, 2009. p. 741 - 744. DOI : 10.1109/IEDM.2009.5424222.Optimization of the channel lateral strain profile for improved performance of multi-gate MOSFETs
2009. International Symposium on VLSI Technology, Systems and Applications, Hsinchu, TAIWAN, Apr 27-29, 2009. p. 119 - 120. DOI : 10.1109/VTSA.2009.5159319.Investigation of oxidation-induced strain in a top-down Si nanowire platform
Microelectronic Engineering. 2009. DOI : 10.1016/j.mee.2009.03.086.Small signal modeling of charge and piezoresistive modulations in active MEM resonators
2009. p. 379 - 382. DOI : 10.1109/ESSDERC.2009.5331508.Micro-Electro-Mechanical Switch Based on Suspended Horizontal Dense Mat of CNTs by FIB Nanomanipulation
2009. 23rd Eurosensors Conference, Lausanne, SWITZERLAND, Sep 06-09, 2009. p. 1411 - 1414. DOI : 10.1016/j.proche.2009.07.352.Retention in nonvolatile silicon transistors with an organic ferroelectric gate
Applied Physics Letters. 2009. DOI : 10.1063/1.3158959.An experimental study of temperature influence on electrical characteristics of ferroelectric P(VDF-TrFE) FETs on SOI
2009. 2009 Proceedings of the European Solid State Device Research Conference (ESSDERC), Athens, Greece, 14-18 09 2009. p. 97 - 100. DOI : 10.1109/ESSDERC.2009.5331330.Asymmetrically strained all-silicon Tunnel FETs featuring 1V operation
2009. p. 452 - 455. DOI : 10.1109/ESSDERC.2009.5331615.Investigation of oxidation-induced strain in a top-down Si nanowire platform
2009. INFOS 2009 (biennial), Cambridge, the UK, 28 June-1 July 2009.Nanogap MEM resonators on SOI
Lausanne, EPFL, 2009. DOI : 10.5075/epfl-thesis-4484.Sub-100μW low power operation of vibrating body FETs
2009. International Symposium on VLSI Technology, Systems and Applications, Hsinchu, TAIWAN, Apr 27-29, 2009. p. 129 - 130. DOI : 10.1109/VTSA.2009.5159324.Microelectromechanical Metal-Air-Insulator-Semiconductor (MEM-MAIS) Diode: A Novel Hybrid Device for ESD Protection
2009. 2009 IEEE 22nd International Conference on Micro Electro Mechanical Systems (MEMS), Sorrento, Italy, 25-29 01 2009. p. 132 - 135. DOI : 10.1109/MEMSYS.2009.4805336.Highly Tunable Band-Stop Filters Based on AIN RF MEM Capacitive Switches with Inductive Arms and Zipping Capacitive Coupling
2009. IEEE International Electron Devices Meeting (IEDM 2009), Baltimore, MD, Dec 07-09, 2009. p. 753 - 756. DOI : 10.1109/IEDM.2009.5424217.X-band MEMS technology for integrated Radar modules
2009. p. 254 - 257.Reliability of rf mems capacitive switches and distributed mems phase shifters using aln dielectric
2009. 22nd IEEE International Conference on Micro Electro Mechanical Systems (MEMS), Sorrentto, Italy, January 25-29, 2009.. p. 638 - 641. DOI : 10.1109/MEMSYS.2009.4805463.Micro-electro-mechanical capacitors based on vertical carbon nanotube arrays
2009. p. 335 - 338. DOI : 10.1109/ESSDERC.2009.5331309.Silicon nanowires with lateral uniaxial tensile stress profiles for high electron mobility gate-all-around MOSFETs
2009. MNE 2009, Ghent, Belgium, 28 Sep.-1 Oct. 2009.Bulk Lateral MEM Resonator on Thin SOI With High Q-Factor
Journal of Microelectromechanical Systems. 2009. DOI : 10.1109/JMEMS.2008.2011689.9 MHz vibrating body FET tuning fork oscillator
2009. Joint Meeting of the 23rd European Frequency and Time Forum/IEEE International Frequency Control Symposium, Besancon, FRANCE, Apr 20-24, 2009. p. 520 - 523. DOI : 10.1109/FREQ.2009.5168235.Carbon Nanotubes Brush Varactor
2009. 10th International Symposium of RF MEMS and RF Microsystems (MEMSWAVE), Trento, Italy, July 6-8, 2009.Centre frequency and bandwidth tunable bandpass filter based on RF MEMS (10-14GHz)
2009. 37th European Microwave Conference, Rome, ITALY, Sep 29-Oct 01, 2009. DOI : 10.23919/EUMC.2009.5296302.SWCNT/MWCNT Crossed Junction by Two-Step Dielectrophoresis
2008.Impact of lateral non-uniform doping and hot carrier degradation on capacitance behavior of high voltage MOSFETs
2008. 37th European Solid-State Device Research Conference, Munich, GERMANY, Sep 11-13, 2007. p. 426 - 429. DOI : 10.1109/ESSDERC.2007.4430969.Variability-Aware Design of Multilevel Logic Decoders for Nanoscale Crossbar Memories
IEEE Transactions on Computer-Aided Design of Integrated Circuits and Systems. 2008. DOI : 10.1109/TCAD.2008.2006076.Impact of Lateral Nonuniform Doping and Hot Carrier Injection on Capacitance Behavior of High Voltage MOSFETs
Iete Technical Review. 2008. DOI : 10.4103/0256-4602.44655.Punch-through impact ionization MOSFET (PIMOS): From device principle to applications
Solid-State Electronics. 2008. DOI : 10.1016/j.sse.2008.04.021.Nanoscale strain characterisation for ultimate CMOS and beyond
2008. International Symposium on Beyond Silicon Technology held at the 2008 EMRS Spring Meeting, Strasbourg, FRANCE, May 26-30, 2008. p. 271 - 278. DOI : 10.1016/j.mssp.2009.06.003.Oxide charging and memory effects in suspended-gate FET
2008. p. 685 - 688. DOI : 10.1109/MEMSYS.2008.4443749.Nano-gap micro-electro-mechanical bulk lateral resonators with high quality factors and low motional resistances on thin silicon-on-insulator
Solid-State Electronics. 2008. DOI : 10.1016/j.sse.2008.04.022.Trapping Individual Carbon Nanotubes
2008.Silicon nanostructuring for 3D bulk silicon versatile devices
2008. 34th International Conference on Micro- and Nano-Engineering, Athens, GREECE, Sep 15-18, 2008. DOI : 10.1016/j.mee.2008.12.083.Prospects for logic-on-a-wire
Microelectronic Engineering. 2008. DOI : 10.1016/j.mee.2008.01.022.Fabrication of MEMS Resonators in Thin SOI
2008.0-level Vacuum Packaging RT Process for MEMS Resonators
2008.Compact Modeling of Suspended Gate FET
2008. p. 119 - 124. DOI : 10.1109/VLSI.2008.11.Laterally vibrating-body double gate MOSFET with improved signal detection
2008. p. 155 - 156. DOI : 10.1109/DRC.2008.4800781.A new definition of threshold voltage in Tunnel FETs
Solid-State Electronics. 2008. DOI : 10.1016/j.sse.2008.04.003.RF MEMS capacitive switch on semi-suspended CPW using low-loss high-resistivity silicon substrate
Microelectronic Engineering. 2008. DOI : 10.1016/j.mee.2008.01.093.Double gate movable body Micro-Electro-Mechanical FET as hysteretic switch: Application to data transmission systems
2008. p. 302 - 305. DOI : 10.1109/ESSDERC.2008.4681758.Oscillator Based on Suspended Gate MOS Transistors
Romanian Journal Of Information Science And Technology. 2008.Fabrication and Characterization of Gate-All-Around Silicon Nanowires on Bulk Silicon
IEEE Transactions on Nanotechnology. 2008. DOI : 10.1109/TNANO.2008.2007215.Hysteretic inverter-on-a-body-tied-wire based on less-than-10mV/decade abrupt punch-through impact ionization MOS (PIMOS) switch
2008. p. 22 - 23. DOI : 10.1109/VTSA.2008.4530780.Demonstration of subthrehold swing smaller than 60mV/decade in Fe-FET with P(VDF-TrFE)/SiO₂ gate stack
2008. p. 1 - 4. DOI : 10.1109/IEDM.2008.4796642.In-Plane Silicon-On-Nothing Nanometer-Scale Resonant Suspended Gate MOSFET for In-IC Integration Perspectives
IEEE Electron Device Letters. 2008. DOI : 10.1109/LED.2008.919781.1T Memory Cell Based on PVDF-TrFE Field Effect Transistor
2008. Material Research Society Spring meeting 2008, MRS 2008. p. 1067 - B03. DOI : 10.1557/PROC-1067-B03-02.Three-dimensional electronic devices fabricated on a top-down silicon nanowire platform
Lausanne, EPFL, 2008. DOI : 10.5075/epfl-thesis-4068.Editorial
Microelectronics Journal. 2008. DOI : 10.1016/j.mejo.2007.05.002.Nano-gap high quality factor thin film SOI MEM resonators
2008.Abrupt NMOS Inverter Based on Punch-Through Impact Ionization With Hysteresis in the Voltage Transfer Characteristics
IEEE Electron Device Letters. 2008. DOI : 10.1109/LED.2008.2001632.Analytical Modeling of the Suspended-Gate FET and Design Insights for Low-Power Logic
IEEE Transactions on Electron Devices. 2008. DOI : 10.1109/TED.2007.911070.High-Isolation Shunt-Series MEMS Switch for a Wide Frequency Range (6-40GHz)
2008. 9th International Symposium of RF MEMS and RF Microsystem (MEMSWAVE), Heraklion (Greece), July 1-3, 2008.DRAM Based on Hysteresis in Impact Ionization Single-Transistor-Latch
2008.Thermally Stable Distributed MEMS Phase Shifter for Airborne and Space Applications
2008. 38th European Microwave Conference, Amsterdam, The Netherlands, November 28-31, 2008. p. 100 - 103. DOI : 10.1109/EUMC.2008.4751397.Non-hysteretic punchthrough impact ionization MOS (PIMOS) transistor: Application to abrupt inverter and NDR circuits
2008. p. 310 - 313. DOI : 10.1109/ESSDERC.2008.4681760.Study of n- and p-type dopants activation and dopants behavior with respect to annealing conditions in silicon germanium-on-insulator (SGOI)
Materials Science and Engineering: B. 2008. DOI : 10.1016/j.mseb.2008.10.023.Pentacene - SiO2 interface: Role of the environment prior to pentacene deposition and its impact on TFT DC characteristics
2008. 26th International Conference on Microelectronics (MIEL 2008), Nis, Serbia, May 11-14, 2008. DOI : 10.1109/ICMEL.2008.4559282.Micro-Electro-Mechanical Metal-Air-Insulator-Semiconductor Diode Switch
2008. 34th International Conference on Micro- and Nano-Engineering, Athens, GREECE, Sep 15-18, 2008. p. 1074 - 1077. DOI : 10.1016/j.mee.2009.02.007.Focussed ion beam based fabrication of micro-electro-mechanical resonators
Microsystem Technologies. 2008. DOI : 10.1007/s00542-007-0464-4.Low voltage Ferroelectric FET with sub-100nm copolymer P(VDF-TrFE) gate dielectric for non-volatile 1T memory
2008. p. 162 - 165. DOI : 10.1109/ESSDERC.2008.4681724.New functionality and ultra low power: key opportunities for post-CMOS era
2008. International Symposium on VLSI Technology, Systems and Applications, Hsinchu, TAIWAN, Apr 21-23, 2008. p. 72 - 73. DOI : 10.1109/VTSA.2008.4530804.NANOSIL network of excellence--silicon-based nanostructures and nanodevices for long-term nanoelectronics applications
Materials Science in Semiconductor Processing. 2008. DOI : 10.1016/j.mssp.2008.09.017.Investigation of Strain Profile Optimization in Gate-All-Around Suspended Silicon Nanowire FET
2008. IEEE ESSDERC 2008, Edinburgh, Scotland, Sep. 15-19, 2008.3D Nanostructured Silicon Relying on Hard Mask Engineering for High Temperature Annealing (HME-HTA) Processes for Electronic Devices
2008.Multi-gate vibrating-body field effect transistor (VB-FETs)
2008. p. 1 - 4. DOI : 10.1109/IEDM.2008.4796781.Finite element analysis and analytical simulations of Suspended Gate-FET for ultra-low power inverters
Solid-State Electronics. 2008. DOI : 10.1016/j.sse.2008.04.013.Design and fabrication of suspended-gate MOSFETs for MEMS resonator, switch and memory applications
Lausanne, EPFL, 2007. DOI : 10.5075/epfl-thesis-3838.Length scaling of the Double Gate Tunnel FET with a high-K gate dielectric
Solid-State Electronics. 2007. DOI : 10.1016/j.sse.2007.09.014.A New Charge based Compact Model for Lateral Asymmetric MOSFET and its application to High Voltage MOSFET Modeling
2007. 20th International Conference on VLSI Design held jointly with 6th International Conference on Embedded Systems (VLSID'07), Bangalore, India, 6-10 01 2007. p. 177 - 182. DOI : 10.1109/VLSID.2007.15.Above-IC RF MEMS devices for communication applications
Lausanne, EPFL, 2007. DOI : 10.5075/epfl-thesis-3778.Charge carriers photogeneration in pentacene field effect transistors
Romanian Journal Of Information Science And Technology. 2007.Numerical and analytical simulations of Suspended Gate - FET for ultra-low power inverters
2007. 37th European Solid-State Device Research Conference, Munich, GERMANY, Sep 11-13, 2007. p. 167 - 170. DOI : 10.1109/ESSDERC.2007.4430905.Fabrication of silicon-on-insulator MEM resonators with deep sub-micron transduction gaps
Microsystem Technologies. 2007. DOI : 10.1007/s00542-006-0349-y.Small slope micro/nano-electronic switches
2007. International Semiconductor Conference, Sinaia, ROMANIA, Oct 15-17, 2007. p. 397 - 402. DOI : 10.1109/SMICND.2007.4519743.An EKV-based high voltage MOSFET model with improved mobility and drift model
Solid-State Electronics. 2007. DOI : 10.1016/j.sse.2007.09.024.Analytical Modeling of the Suspended-Gate FET and Design Insights for Digital Logic
2007. 2007 65th Annual Device Research Conference, South Bend, IN, USA, 18-20 06 2007. p. 103 - 104. DOI : 10.1109/DRC.2007.4373670.Copper / low-k technological platform for the fabrication of high quality factor above-IC passive devices
Lausanne, EPFL, 2007. DOI : 10.5075/epfl-thesis-3831.Abrupt current switching due to impact ionization effects in Omega-MOSFET on low doped bulk silicon
2007. 37th European Solid-State Device Research Conference, Munich, GERMANY, Sep 11-13, 2007. p. 287 - 290. DOI : 10.1109/ESSDERC.2007.4430934.MEMS Tunable Capacitor with Fragmented Electrodes and Rotational Electro-Thermal Drive
2007. 2006 Symposium on Design, Test, Integration and Packaging of MEMS / MOEMS, DTIP 2006, Stresa, Italy, April 2006. p. 1589 - 1594. DOI : 10.1007/s00542-006-0350-5.Gate-all-around silicon nanowires for hybrid single electron transistor/CMOS applications
Lausanne, EPFL, 2007. DOI : 10.5075/epfl-thesis-3983.Threshold voltage in Tunnel FETs: physical definition, extraction, scaling and impact on IC design
2007. 37th European Solid-State Device Research Conference, Munich, GERMANY, Sep 11-13, 2007. p. 299 - 302. DOI : 10.1109/ESSDERC.2007.4430937.Ultra-thin nanograin polysilicon devices for hybrid CMOS-NANO integrated circuits
Lausanne, EPFL, 2007. DOI : 10.5075/epfl-thesis-3722.Double-Gate Tunnel FET With High-k Gate Dielectric
IEEE Transactions on Electron Devices. 2007. DOI : 10.1109/TED.2007.899389.Bended gate-all-around nanowire MOSFET: a device with enhanced carrier mobility due to oxidation-induced tensile stress
2007. IEEE International Electron Devices Meeting, Washington, DC, Dec 10-12, 2007. p. 191 - 194. DOI : 10.1109/IEDM.2007.4418899.High Quality Factor Copper Inductors Integrated in Deep Dry Etched Quartz Substrates
2007. 2006 Symposium on Design, Test, Integration and Packaging of MEMS / MOEMS, DTIP 2006, Stresa, Italy, April 2006. p. 1483 - 1487. DOI : 10.1007/s00542-006-0364-z.Fabrication of Silicon-On-Insulator MEM Resonators with Deep Sub-Micron Transduction Gaps
2007. 2006 Symposium on Design, Test, Integration and Packaging of MEMS / MOEMS, DTIP 2006, Stresa, Italy, April 2006. p. 1489 - 1493. DOI : 10.1007/s00542-006-0349-y.Capacités variables et inductances MEMS RF pour une intégration "Above-IC"
Lausanne, EPFL, 2007. DOI : 10.5075/epfl-thesis-3790.High quality factor copper inductors integrated in deep dry-etched quartz substrates
2007. Symposium on Design, Test, Integration and Packaging of MEMS/MOEMS, Stresa, ITALY, Apr 26-28, 2006. p. 1483 - 1487. DOI : 10.1007/s00542-006-0364-z.Compact Modeling of Lateral Nonuniform Doping in High-Voltage MOSFETs
IEEE Transactions on Electron Devices. 2007. DOI : 10.1109/TED.2007.896597.Cointegration of Gate-All-Around MOSFETs and Local Silicon-on-Insulator Optical Waveguides on Bulk Silicon
IEEE Transactions On Nanotechnology. 2007. DOI : 10.1109/TNANO.2006.886748.Fragmented Membrane MEM Bulk Lateral Resonators with nano-gaps on 1.5 mu m SOI
2007. 37th European Solid-State Device Research Conference, Munich, GERMANY, Sep 11-13, 2007. p. 430 - 433. DOI : 10.1109/ESSDERC.2007.4430970.Fault-tolerant multi-level logic decoder for nanoscale crossbar memory arrays
2007. IEEE/ACM International Conference on Computer-Aided Design, San Jose, California, USA, November 4-8. p. 765 - 772. DOI : 10.1109/ICCAD.2007.4397358.Integration of MOSFET transistors in MEMS resonators for improved output detection
2007. 14th International Conference on Solid-State Sensors, Actuators and Microsystems, Lyon, FRANCE, Jun 10-14, 2007. p. 1709 - 1712. DOI : 10.1109/SENSOR.2007.4300481.Hybrid Nanowire-MOS circuit architectures: from basic physics to digital and analog applications
2006.Coulomb blockade in gate-all-around silicon nanowire MOSFETs
2006. p. 25 - 26.Hybrid CMOS - Single Electron Transistor Circuits: Promise or Dream
2006.Conduction in ultra-thin SOI nanowires prototyped by FIB milling
Microelectronic Engineering. 2006. DOI : 10.1016/j.mee.2006.01.116.Pentacene organic MOSFETs with Au and Pt bottom contacts
2006. p. 301 - 304. DOI : 10.1109/SMICND.2006.284003.Local volume inversion and corner effects in triangular gate-all-around MOSFETs
2006. ESSDERC 2006. p. 359 - 362. DOI : 10.1109/ESSDER.2006.307712..A Highly Scalable High Voltage MOSFET Model
2006. ESSDERC 2006, Montreux, Switzerland, 19-21 September 2006. p. 270 - 273. DOI : 10.1109/ESSDER.2006.307690.Fast and Efficient Light Intensity Modulation in SOI with Gate-All-Around Transistor Phase Modulator
2006. 2005 Conference on Lasers and Electro-Optics (CLEO), Baltimore, USA, 2005. p. 110 - 112. DOI : 10.1109/CLEO.2005.201693.Gate-all-around MOSFETs: true fabrication and characteristics
2006.Analysis and Modeling of Lateral Non-Uniform Doping in High-Voltage MOSFETs
2006. DOI : 10.1109/IEDM.2006.347000.A Compact DC and AC Model for Circuit Simulation of High Voltage VDMOS Transistor
2006. DOI : 10.1109/ISQED.2006.7.Vertical co-integration of AlSi MEMS tunable capacitors and Cu inductors for tunable LC blocks
2006.New Method for Threshold Voltage Extraction of High Voltage MOSFETs based on Gate-to-Drain Capacitance Measurement
IEEE Electron Device Letters. 2006. DOI : 10.1109/LED.2006.877275.Experimental study of the process dependence of Mo, Cr, Ti, and W silicon Schottky diodes and contact resistance
IEEE Transactions on Electron Devices. 2006. DOI : 10.1109/TED.2006.870574.Low temperature single electron characteristics in gate-all-around MOSFET
2006. p. 427 - 430. DOI : 10.1109/ESSDER.2006.307729.Ultra-low voltage MEMS resonator based on RSG-MOSFET
2006. p. 882 - 885. DOI : 10.1109/MEMSYS.2006.1627941.MEMS Capacitive Pressure Sensor Based on Polysilicon Sealed Membrane
2006. 20th Eurosensors, Gothenburg, Sweden, September 17-20, 2006. p. 456 - 457.A new charge-based Compact Model for Lateral Asymmetric MOSFET
2006.A New Charge based EKV Compact Model for Lateral Asymmetric MOSFET
2006.Nano-scale ICT devices and systems
2006.MEMS Tunable Capacitor with laterally driven fragmented electrodes and electro-thermal actuation
2006.Co-integration of gate-all-around MOSFETs and local silicon-on insulator optical waveguides on bulk silicon for GHz on-chip optical signaling
2006. p. 31 - 32.Compact gate-all-around silicon light modulator for ultra high speed operation
Sensors and Actuators A: Physical. 2006. DOI : 10.1016/j.sna.2006.01.024.Double gate tunnel FET with ultrathin silicon body and high-k dielectric
2006. ESSDERC 2006. p. 383 - 386. DOI : 10.1109/ESSDER.2006.307718.Capacitive pressure microsensor fabricated by bulk micromachining and sacricial layer etching
2006. 32nd Annual Conference of the IEEE Industrial Electronics Society, IECON 06, Paris, France, November 9-11, 2006. p. 2969 - 2974. DOI : 10.1109/IECON.2006.348052.Electrical conduction in 10 nm thin polysilicon wires from 4 to 400 K and their operation for hybrid memory
Japanese Journal of Applied Physics. 2006. DOI : 10.1143/JJAP.45.5461.Polyimide sacrificial layer for SOI SG-MOSFET pressure sensor
Microelectronic Engineering. 2006. DOI : 10.1016/j.mee.2005.12.021.Electrical conduction in 10nm-thin polysilicon wires from 4K to 400K and their operation for hybrid memory
2005.Silicon nanowires patterning by sidewall and nano-oxidation processing
2005.Low temperature investigation of electrical conduction in polysilicon: simulation and experiment
2005.Polyimide sacrificial layer process for SOI SG-MOSFET pressure sensor
2005. 31th International Conference on Micro- and Nano-Engineering (MNE), Vienna, Austria, September 19-22, 2005.Nanostencil-based lithography for silicon nanowires fabrication
2005.Suspended-Gate MOSFET: bringing new MEMS functionality into solid-state MOS transistor
2005. p. 479 - 481. DOI : 10.1109/IEDM.2005.1609384.Tunable Oscillating CMOS Pixel for Subretinal Implants
2005. IEEE Sensors 2005. DOI : 10.1109/ICSENS.2005.1597827.A hybrid CMOS-SET co-fabrication platform using nano-grain polysilicon wires
2005. 30th International Conference on Micro- and Nano-Engineering (MNE 2004), Rotterdam,Netherlands, 19-22 September 2004. p. 239 - 343. DOI : 10.1016/j.mee.2004.12.033.Fabrication and electrical characterization of high performance copper/polyimide inductors
2005. PRIME 2005, Lausanne, Switzerland, 2005-07-28. p. 185 - 188. DOI : 10.1109/RME.2005.1543035.Enseignement et PhD
Doctorant·es actuel·les
Ketong Yang, Edoardo Tenna, Hao Chen Yeh, Shima Rezaee Fakhr, Tú Anh Lê, Yann Zosso, Ali Gilani, Ehsan Ansari, Andrea Iaconeta, Zahra Saadat Somaehsofla, Niccolò Martinolli, Emi Myzeqari, Siddharth Gautam, Cyrille Masserey, Vanessa Conti, Lotte Franciska N De Schrijver, Onofrio Davide Caputo, Benoît Valentin Hirtzel
A dirigé les thèses EPFL de
Costin Anghel, Nasser Hefiana, Santanu Mahapatra, Serge Ecoffey, Raphaël Fritschi, Marcelo Bento Pisani, Alexander Mehdaoui, Nicolas Abelé, Vincent Pott, Kirsten Emilie Moselund, Nicoleta-Diana Ciressan, Daniel Grogg, Katherine Boucart, Montserrat Fernandez-Bolanos Badia, Donatello Acquaviva, Anupama Arun, Matthieu Bopp, Giovanni Antonio Salvatore, Jyotshna Bhandari, Nenad Cvetkovic, Luca De Michielis, Mohammad Najmzadeh, Alexandru Rusu, Hesham Ghoneim, Livio Lattanzio, Ji Cao, Sebastian Thimotee Bartsch, Marion Hermersdorf, Sara Rigante, Hoël Maxime Guérin, Elizabeth Buitrago Godinez, Negar Moridi, Nilay Dagtekin, Arnab Biswas, Pankaj Sharma, Clara-Fausta Moldovan, Wolfgang Amadeus Vitale, Davide Cutaia, Cem Alper, Mariazel Maqueda López, Emanuele Andrea Casu, Erick Antonio Garcia Cordero, Junrui Zhang, Ali Saeidi, Maneesha Rupakula, Nicolò Oliva, Francesco Bellando, Clarissa Convertino, Elisabetta Corti, Teodor Rosca, Fatemeh Qaderi Rahaqi, Carlotta Gastaldi, Luca Capua, Sadegh Kamaei Bahmaei, Fabio Bersano, Yann Christophe Sprunger, Hung-Wei Li
A co-dirigé les thèses EPFL de
Yogesh Singh Chauhan, Michele Tamagnone
Cours
Aspects of quantum science and sustainability
QUANT-411
Nous explorons l'intersection entre la science quantique et la durabilité. Sujets: 1)discussion des aspects fondamentaux de la thermodynamique du calcul; 2)analyse et benchmark du cout energétique des devices quantiques actuels et futurs; 3)projets sur des exemples de cas d'utilisations.
Nanoelectronics
EE-535
Ce cours présente les tendances actuelles en technologie et dispositifs nanoélectroniques en termes de réduction des dimensions, meilleures performances, nouvelles fonctionalités et ultra-basse consommation. Les défis des nouveaux nanocomposants pour pousser les roadmaps industriels sont analysés.
Semiconductor devices II
EE-567
Les étudiants apprendront à comprendre les principes fondamentaux et les applications des dispositifs, matériaux et concepts émergents à l'échelle nanométrique. matériaux et concepts à l'échelle nanométrique. Remarque : au moins 5 étudiants doivent être inscrits pour que le cours soit donné.