Mihai Adrian Ionescu
Full Professor
adrian.ionescu@epfl.ch +41 21 693 39 78 http://nanolab.epfl.ch
Citizenship: Swiss and Romanian
+41 21 693 39 78
EPFL
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STI
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SEL-ENS
EPFL STI IEL NANOLAB
ELB 335 (Bâtiment ELB)
Station 11
1015 Lausanne
+41 21 693 39 78
+41 21 693 39 79
Office:
ELB 335
EPFL
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STI
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IEM
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NANOLAB
Web site: Web site: https://nanolab.epfl.ch/
EPFL AVP CP CMI-CD
1015 Lausanne
+41 21 693 39 78
Office:
EPFL
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VPA-AVP-CP
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CMI
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CMI-CD
Fields of expertise
Nanotechnology
Steep-slope tunnel FETs and ferroelectric FETs
Energy efficient nanoelectronics for sustainability
Qubits for Quantum Computing
Edge AI sensors
Modeling and Simulation of Solid-State Electronic Devices
Lab On Skin Technology for Digital twins
Mission
Nanolab is working on various subjects in the field of micro/nano-electronics with special emphasis on: (i) energy efficient devices and their integration in circuits and systems to achieve low power electronic functions, (ii) Edge AI and IoT smart sensors for real-time small-foot-print aplications, (iii) phase change and ferroelectric materials for reconfigurable RF and neuromorphic computation, (iv) novel architectures of silicon qubits for scalable Quantum Computing. The lab makes important effort to support the sustainability of future electronics platforms at three levels: (1) by contributing to energy efficiency, (2) by prioritizing materials that are abundant on Earth, and, (3) by working and/or developing with non-toxic fabrication processes.Current work
Advaced ERC Grant Millitech (https://cordis.europa.eu/project/id/695459/de) Milli-Volt Switch Technologies for Energy Efficient Computation and SensingThe Milli-Tech proposal aims at a novel technology platform serving both computation and sensing: electronic switch architectures, called steep slope switches, exploiting new device physics and concepts in emerging 2D materials to achieve operation at voltages below 100 millivolts. The project develops a technological platform called ‘millivolt technology’ focusing on low power digital and sensing/analog electronic functions exploiting steep slopes, with the goal of lowering the energy per useful function (computed and sensed bit of information) by a factor of 100x.
Such ultra-low operation voltage will contribute to solving major challenges of nanoelectronics such as power issues and it will enable energy efficient super-sensitive sensors for Internet-of-Everything (IoE). Milli-Tech includes fundamental research on new solid-state steep slope device concepts: heterostructure tunnel FETs in 2D Transition-Metal-Dichalcogenides (TMD), 2D Van der Waals super-lattice energy filter switch and hybrid architectures combining two switching principles: band-to-band-tunneling and metal-insulator-transition or negative capacitance in VO2, used as additive technology boosters.
DIGIPREDICT FET Proactive Project (https://ec.europa.eu/newsroom/horizon2020/items/699059) - DIGIPREDICT proposes the first of its kind digital twin to predict the progression of disease and the need for early intervention in infectious and cardiovascular diseases. A digital twin is a digital representation of an object or process from the real world in the digital world – and more specifically for the case of DIGIPREDICT – of a patient. The project combines the latest advances in digital biomarkers, organ-on-chip (OoC) and artificial intelligence at the edge, and aims to build a new interdisciplinary community in Europe focused on digital twins.
The developed system will provide medical doctors with a unique digital tool for early prediction of potential serious complications in COVID-19 patients. Beyond COVID-19, the system promises to also improve the prevention, diagnosis, monitoring and treatment of cardiovascular disease and detect the potential onset of inflammatory disease.
This multi- and cross-disciplinary project will combine scientific excellence with engineering know-how, and leverage the expertise of doctors, biologists, electrical engineers, computer scientists, signal-processing engineers and social scientists from across Europe .
SINERGIA NEMO Project - The NeMO (neuromimetic metal-oxide memristors) Sinergia project aims to develop fundamental understanding, optimized materials and novel device architectures for the engineering of highly tunable metal-oxide neuromimetic memristors. Mimicking biological neurons, the devices that we will develop will operate in voltage (100 to 200mV peak-to-peak) and frequency (0.1KHz to 1 MHz) ranges that will make them 100x more energy efficient than today’s equivalent CMOS-based hardware. They will therefore enable implementation of highly energy efficient neuro-mimetic computational hardware for next generation information technologies.
This ambitious goal needs a multidisciplinary approach combining theoretical and computational material science, solid-state physics and chemistry, and electronic device and circuit design and technology. These synergies are reflected in the collaboration between the teams led by Professors Nicola Spaldin (Materials Department, ETHZ) and Adrian Ionescu (Electrical Engineering Department, EPFL).
Biography
Adrian M. Ionescu is a Full Professor of Nanoelectronics at Ecole Polytechnique Fédérale de Lausanne (EPFL), Switzerland. He received the B.S. &M.S. in Electronics and Telecommunications in 1989 from the University ‘Politehnica’ Bucharest, Romania. He holds two PhDs, in Microelectronics, from University ‘Politehnica’ Bucharest (1994) and in Physics of semiconductor devices from the National Polytechnic Institute of Grenoble, France (1997).He held staff and/or visiting positions at Commissariat à l’Énergie Atomique (CEA-LETI), Centre National de la Recherche Scientifique (CNRS), and Stanford University, USA. He was Invited Professor with Tokyo Institute of Technology, Japan, in 2012 and 2016.He is the founder and director of the Nanoelectronic Devices Laboratory (Nanolab: http://nanolab.epfl.ch/ ) of EPFL. Prof. Ionescu served as Director of the Doctoral Program in Microsystems and Microelectronics of EPFL and Director of the (former) Institute of Microsystems and Microelectronics of EPFL. His nanoelectronics research deals with beyond CMOS and More-Than Moore energy efficient devices and technologies. His group pioneered steep slope transistors, M/NEMS devices with main emphasis on low power concepts in order to achieve novel energy efficient digital, analog, radio frequency and low power sensing functions. He has been the leader of many European projects focusing on low power nanoelectronics and nanotechnology for smart systems.He was an Editor of IEEE Transactions on Electron Devices and is currently a Board Member of Proceedings of IEEE. He has served the Technical Committees of many IEEE conferences, and, he was the Technical Chair of IEEE SNW at IEEE VLSI Technology Symposium 2016 (USA), and the General Chair of the IEEE European Solid-State Devices and Circuits Research Conference (ESSDERC/ESSCIRC 2016). Prof. Ionescu has published more than 600 articles in international journals and conference proceedings. He is the recipient of IBM Faculty Award 2013 for contributions to the Engineering and the recipient of André Blondel Medal 2009 of the Society of Electrical and Electronics Engineering, Paris, France. He and his group received the IEEE George Smith Award that in 2017.Professor Ionescu has been the main coordinator of FET Flagship Pilot Guardian Angels for a Smarter Life, an advanced research program involving a Consortium of 66 partners (global industries in field of semiconductors, telecommunications, sensors, health care and automotive, large research institutes and universities), selected by the European Commission as one of the four leading finalists for future emerging technologies.He is an IEEE Fellow and in 2015 he was elected as a member of the Swiss Academy of Sciences (SATW). In the same year he received the Outstanding Achievement Award of SATW for the successful coordination and delivery of the first national Swiss Technology Outlook to the Swiss government, a document that summarizes the work of multi‐disciplinary team of experts and provides recommendations for technological priorities and investments in the digital economy.In 2016 he received an Advanced ERC (European Research Council) Grant for individual senior scientists in Europe to develop a program aiming at energy efficient computation and sensing for Internet-of-Things. Currently, he leads the FET Proactive DIGIPREDICT, an European Consortium developing Digital Twins for Personalized, Preventive and Participatory Healthcare, a paradigm change in 21st century sustainable healthcareAwards
2017 : IEEE EDL George Smith Award : Best Paper published in IEEE EDL Journal in 2017
2013 : IBM Faculty Award : Engineering
2009 : Blondel Medal : For contributions to the progress in engineering sciences in the domain of electronics
1994 : The Annual Award of The Technical Section of the Romanian Academy of Sciences : Contributions to SOI technology
2024 : IEEE Technical Field Award Cledo Brunetti : “for leadership and contributions to the field of energy-efficient steep slope devices and technologies.”
Publications
Infoscience publications
Infoscience
Controlled Electronic and Magnetic Landscape in Self-Assembled Complex Oxide Heterostructures
Advanced Materials. 2023. DOI : 10.1002/adma.202300200.Millimeter-wave to near-terahertz sensors based on reversible insulator-to-metal transition in VO2
Communications Materials. 2023. DOI : 10.1038/s43246-023-00350-x.Ferroelectric Junctionless Double-Gate Silicon-On-Insulator FET as a Tripartite Synapse
Ieee Electron Device Letters. 2023. DOI : 10.1109/LED.2023.3249972.Nanoscale local modification of PMMA refractive index by tip-enhanced femtosecond pulsed laser irradiation
Applied Surface Science. 2023. DOI : 10.1016/j.apsusc.2023.157014.Ultra-High Sensitivity Silicon Nanowire Array Biosensor Based on a Constant-Current Method for Continuous Real-Time pH and Protein Monitoring in Interstitial Fluid
2023. IEEE 49th European Solid-State Circuits Conference (ESSCIRC), Lisbon, PORTUGAL, SEP 11-14, 2023. p. 153 - 156. DOI : 10.1109/ESSCIRC59616.2023.10268731.Energy-Efficient Electronic Functions Based on the Co-integration of 2D and Ferroelectric Materials
Lausanne, EPFL, 2023. DOI : 10.5075/epfl-thesis-10096.Static and Dynamic Stochastic Analysis of a Temperature-Sensitive VO<sub>2</sub> Spiking Neuron
2023. IEEE 53rd European Solid-State Device Research Conference (ESSDERC), Lisbon, PORTUGAL, SEP 11-14, 2023. p. 81 - 84. DOI : 10.1109/ESSDERC59256.2023.10268509.Monitoring of Protein and pH Levels in Human Biofluids using FD-SOI Silicon Nanowire Arrays
Lausanne, EPFL, 2023. DOI : 10.5075/epfl-thesis-9998.Model-Based ISO 14971 Risk Management of EEG-Based Medical Devices
2023. 45th Annual International Conference of the IEEE Engineering in Medicine and Biology Society (EMBC), Sydney Australia, July 24-27, 2023. DOI : 10.1109/EMBC40787.2023.10340131.Metamodel for Safety Risk Management of Medical Devices Based on ISO 14971
2023. The ACM/IEEE 26th International Conference on Model-Driven Engineering Languages and Systems, Västerås, Sweden, October 1-6, 2023.Giant switchable non thermally-activated conduction in 180 degrees domain walls in tetragonal Pb(Zr,Ti)O-3
Nature Communications. 2022. DOI : 10.1038/s41467-022-34777-6.Defect-induced magnetism in homoepitaxial SrTiO3
Apl Materials. 2022. DOI : 10.1063/5.0101411.Highly Sensitive Detection of the Antidepressant Fluoxetine With an Extended Gate Field Effect Transistor
Ieee Sensors Journal. 2022. DOI : 10.1109/JSEN.2022.3161116.Negative Capacitance in HfO2 Gate Stack Structures With and Without Metal Interlayer
Ieee Transactions On Electron Devices. 2022. DOI : 10.1109/TED.2022.3157579.Label-Free C-Reactive Protein Si Nanowire FET Sensor Arrays With Super-Nernstian Back-Gate Operation
Ieee Transactions On Electron Devices. 2022. DOI : 10.1109/TED.2022.3144108.Subthreshold VO2 vertical switches for large-bandwidth millimeter-wave and sub-terahertz detection
2022. 47th International Conference on Infrared, Millimeter and Terahertz Waves (IRMMW-THz), Delft, NETHERLANDS, Aug 28-Sep 02, 2022. DOI : 10.1109/IRMMW.THz50927.2022.9895513.Spike-Based Sensing and Communication for Highly Energy-Efficient Sensor Edge Nodes
2022. 2nd IEEE International Symposium on Joint Communications and Sensing (JC and S), Seefeld, AUSTRIA, Mar 09-10, 2022. DOI : 10.1109/JCS54387.2022.9743501.Gate energy efficiency and negative capacitance in ferroelectric 2D/2D TFET from cryogenic to high temperatures
Npj 2D Materials And Applications. 2021. DOI : 10.1038/s41699-021-00257-6.Intrinsic switching in Si-doped HfO2: A study of Curie-Weiss law and its implications for negative capacitance field-effect transistor
Applied Physics Letters. 2021. DOI : 10.1063/5.0052129.A Wearable Low-Power Sensing Platform for Environmental and Health Monitoring: The Convergence Project
Sensors. 2021. DOI : 10.3390/s21051802.Sensitivity, Noise and Resolution in a B -Modified Foundry-Made ISFET with Miniaturized Reference Electrode for Wearable Point-of-Care Applications
Sensors. 2021. DOI : 10.3390/s21051779.A hybrid III-V tunnel FET and MOSFET technology platform integrated on silicon
Nature Electronics. 2021. DOI : 10.1038/s41928-020-00531-3.Extended gate field-effect-transistor for sensing cortisol stress hormone
Communications Materials. 2021. DOI : 10.1038/s43246-020-00114-x.High Tuning Range Spiking 1R-1T VO2 Voltage-Controlled Oscillator for Integrated RF and Optical Sensing
2021. IEEE 51st European Solid-State Device Research Conference (ESSDERC), ELECTR NETWORK, Sep 06-09, 2021. p. 183 - 186. DOI : 10.1109/ESSDERC53440.2021.9631804.Coupled VO2 oscillators circuit as analog first layer filter in convolutional neural networks
Frontiers In Neuroscience. 2021. DOI : 10.3389/fnins.2021.628254.High Tuning Range Spiking 1R-1T VO2 Voltage-Controlled Oscillator for Integrated RF and Optical Sensing
2021. 47th IEEE European Solid State Circuits Conference (ESSCIRC), ELECTR NETWORK, Sep 06-09, 2021. p. 183 - 186. DOI : 10.1109/ESSCIRC53450.2021.9567761.Networks of Coupled VO2 Oscillators for Neuromorphic Computing
Lausanne, EPFL, 2021. DOI : 10.5075/epfl-thesis-9303.Double-Gate Si Nanowire FET Sensor Arrays For Label-Free C-Reactive Protein detection enabled by antibodies fragments and pseudo-super-Nernstian back-gate operation
2021. 67th Annual IEEE International Electron Devices Meeting (IEDM 2021), San Francisco, CA, USA, December 11-15, 2021. DOI : 10.1109/IEDM19574.2021.9720670.An Experimental Study Of The Photoresponse Of 1T-1R Oscillators Based On Vanadium Dioxide: Towards Spiking Sensing Systems
2021. 21st International Conference on Solid-State Sensors, Actuators and Microsystems (Transducers), ELECTR NETWORK, Jun 20-25, 2021. p. 373 - 376. DOI : 10.1109/TRANSDUCERS50396.2021.9495742.Radio Frequency Temperature Transducers Based On Insulator-Metal Phase Transition In Vo2 And Ge-Doped Vo2 Ald Thin Films
2021. 21st International Conference on Solid-State Sensors, Actuators and Microsystems (Transducers), ELECTR NETWORK, Jun 20-25, 2021. p. 1355 - 1358. DOI : 10.1109/TRANSDUCERS50396.2021.9495498.Antibodies fragments as enablers of cardiac troponin (cTn) detection with extended gate metal-oxide-semiconductor field effect transistors (EGFET)
2020. p. 1699 - 1699.Intrinsic or nucleation-driven switching: An insight from nanoscopic analysis of negative capacitance Hf1-xZrxO2-based structures
Applied Physics Letters. 2020. DOI : 10.1063/5.0021272.Temperature dependence of reconfigurable bandstop filters using vanadium dioxide switches
Applied Physics Letters. 2020. DOI : 10.1063/5.0021942.The 3D Smith Chart: From Theory to Experimental Reality
IEEE Microwave Magazine. 2020. DOI : 10.1109/MMM.2020.3014984.3D Smith chart constant quality factor semi-circles contours for positive and negative resistance circuits
IEEE Access. 2020. DOI : 10.1109/ACCESS.2020.3026917.Corrections to “Experimental Details of a Steep-Slope Ferroelectric InGaAs Tunnel-FET With High-Quality PZT and Modeling Insights in the Transient Polarization”
Ieee Transactions On Electron Devices. 2020. DOI : 10.1109/TED.2020.2995786.Experimental Investigation of Pulsed Laser Deposition of Ferroelectric Gd:HfO2 in a CMOS BEOL Compatible Process
Acs Applied Electronic Materials. 2020. DOI : 10.1021/acsaelm.0c00319.Nanowire Tunnel FET with Simultaneously Reduced Subthermionic Subthreshold Swing and Off-Current due to Negative Capacitance and Voltage Pinning Effects
Nano Letters. 2020. DOI : 10.1021/acs.nanolett.9b05356.WSe2/SnSe2 vdW heterojunction Tunnel FET with subthermionic characteristic and MOSFET co-integrated on same WSe2 flake
Npj 2D Materials And Applications. 2020. DOI : 10.1038/s41699-020-0142-2.Subthermionic negative capacitance ion sensitive field-effect transistor
Applied Physics Letters. 2020. DOI : 10.1063/5.0005411.Radio-Frequency Characteristics of Ge-doped Vanadium Dioxide Thin Films with Increased Transition Temperature
ACS Applied Electronic Materials. 2020. DOI : 10.1021/acsaelm.0c00078.An Experimental Study on Mixed-Dimensional 1D-2D van der Waals Single-Walled Carbon Nanotube-WSe2 Hetero-Junction
IEEE Electron Device Letters. 2020. DOI : 10.1109/LED.2020.2974400.Monolithically Integrated Catalyst-Free High Aspect Ratio InAs-on-Insulator (InAsOI) FinFETs for pH Sensing
Ieee Journal Of The Electron Devices Society. 2020. DOI : 10.1109/JEDS.2020.3008094.Extended-Gate FET cortisol sensor for stress disorders based on aptamers-decorated graphene electrode: Fabrication, Experiments and Unified Analog Predictive Modeling
2020. IEEE International Electron Devices Meeting (IEDM), ELECTR NETWORK, Dec 12-18, 2020. DOI : 10.1109/IEDM13553.2020.9372063.At the end of scaling: 2D materials for computing and sensing applications
Lausanne, EPFL, 2020. DOI : 10.5075/epfl-thesis-7695.High-Performance III-V MOSFETs and Tunnel-FETs Integrated on Silicon
Lausanne, EPFL, 2020. DOI : 10.5075/epfl-thesis-8346.Sweat monitoring with CMOS compatible technology: ISFETS and beyond
Lausanne, EPFL, 2020. DOI : 10.5075/epfl-thesis-7464.Extended Gate Field Effect Transistor Based Sensor for Detection of Trace Amounts of Anti-Depressant Drug
Ieee Access. 2020. DOI : 10.1109/ACCESS.2020.3034691.Negative capacitance semiconductor sensor
EP3671199 ; US11289601 ; EP3671199 ; US2020194592 . 2020.Negative Capacitance Double-Gate Junctionless FETs: A Charge-Based Modeling Investigation of Swing, Overdrive and Short Channel Effect
Ieee Journal Of The Electron Devices Society. 2020. DOI : 10.1109/JEDS.2020.3020976.InAs-on-Insulator Fin Nanostructures for Integrated Computation and Sensing Functions
Lausanne, EPFL, 2020. DOI : 10.5075/epfl-thesis-7303.Experimental Details of a Steep-Slope Ferroelectric InGaAs Tunnel-FET With High-Quality PZT and Modeling Insights in the Transient Polarization
IEEE Transactions on Electron Devices. 2019. DOI : 10.1109/TED.2019.2954585.3D Smith charts scattering parameters frequency-dependent orientation analysis and complex-scalar multi-parameter characterization applied to Peano reconfigurable vanadium dioxide inductors
Scientific Reports. 2019. DOI : 10.1038/s41598-019-54600-5.Detection of ultra-low protein concentrations with the simplest possible field effect transistor
Nanotechnology. 2019. DOI : 10.1088/1361-6528/ab192c.Hysteresis Dynamics in Double-Gated n-Type WSe2 FETs With High-k Top Gate Dielectric
IEEE Journal of the Electron Devices Society. 2019. DOI : 10.1109/JEDS.2019.2933745.Sweat Biomarker Sensor Incorporating Picowatt, Three-Dimensional Extended Metal Gate Ion Sensitive Field Effect Transistors
ACS Sensors. 2019. DOI : 10.1021/acssensors.9b00597.Negative Capacitance as Universal Digital and Analog Performance Booster for Complementary MOS Transistors
Scientific Reports. 2019. DOI : 10.1038/s41598-019-45628-8.A Novel Reconfigurable CMOS Compatible Ka Band Bandstop Structure Using Split-Ring Resonators and Vanadium Dioxide (VO2) Phase Change Switches
2019. 2019 IEEE MTT-S International Microwave Symposium (IMS), Boston, June 7-11,2019. p. 865 - 867. DOI : 10.1109/MWSYM.2019.8701121.NanoElectronics roadmap for Europe: From nanodevices and innovative materials to system integration
Solid-State Electronics. 2019. DOI : 10.1016/j.sse.2019.03.014.Resistive Coupled VO2 Oscillators for Image Recognition
2019. 2018 IEEE International Conference on Rebooting Computing (ICRC), McLean, VA, USA, 7-9 Nov. 2018. p. 195 - 201. DOI : 10.1109/ICRC.2018.8638626.Near Hysteresis-Free Negative Capacitance InGaAs Tunnel FETs with Enhanced Digital and Analog Figures of Merit below VDD=400mV
2019. IEEE International Electron Devices Meeting (IEDM). DOI : 10.1109/IEDM.2018.8614583.Wearable System for Real-Time Sensing of Biomarkers in Human Sweat
Lausanne, EPFL, 2019. DOI : 10.5075/epfl-thesis-9696.Apparatus for non-invasive sensing of biomarkers in human sweat
US11331009 ; EP3697317 ; WO2019076733 ; WO2019076733 ; US2019110722 . 2019.Exploration of Negative Capacitance Devices and Technologies
Lausanne, EPFL, 2019. DOI : 10.5075/epfl-thesis-9340.Co-integrated Subthermionic 2D/2D WSe2/SnSe2 Vertical Tunnel FET and WSe2 MOSFET on same flake: towards a 2D/2D vdW Dual-Transport Steep Slope FET
2019. 65th IEEE Annual International Electron Devices Meeting (IEDM), San Francisco, CA, Dec 09-11, 2019. DOI : 10.1109/IEDM19573.2019.8993643.VO2 oscillators coupling for Neuromorphic Computation
2019. Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon (EUROSOI-ULIS), Grenoble, FRANCE, Apr 01-03, 2019. DOI : 10.1109/EUROSOI-ULIS45800.2019.9041875.Capillary flow device for bio-fluid collection with semiconductor sensors
EP3510403 ; EP3510403 ; US11389096 ; US2019246959 ; EP3510403 ; US2018070869 ; WO2018047125 . 2019.Double-gate field-effect-transistor based biosensor
US11467123 ; US2020284753 ; EP3679363 ; WO2019048059 . 2019.Monolithically integrated catalyst-free High Aspect Ratio InAs-On-Insulator (InAsOI) FinFETs for pH sensing
2019. 49th European Solid-State Device Research Conference (ESSDERC), Cracow, POLAND, Sep 23-26, 2019. p. 106 - 109. DOI : 10.1109/ESSDERC.2019.8901739.Sub-Thermionic Scalable III-V Tunnel Field-Effect Transistors Integrated on Si (100)
2019. 65th IEEE Annual International Electron Devices Meeting (IEDM), San Francisco, CA, Dec 09-11, 2019. DOI : 10.1109/IEDM19573.2019.8993610.Sensing device for sensing minor charge variations
US10818785 ; US2019172937 . 2019.Field-effect transistor device or sensor for sensing ions, molecules or biomarkers in a fluid
US2021270770 ; EP3811071 ; CN112567238 ; WO2019244113 . 2019.Millimeter-wave-triggering of insulator-to-metal transition in Vanadium dioxide
2019. 44th International Conference on Infrared, Millimeter, and Terahertz Waves (IRMMW-THz), Paris, FRANCE, Sep 01-06, 2019. DOI : 10.1109/IRMMW-THz.2019.8874271.Transient Negative Capacitance of Silicon-doped HfO2 in MFMIS and MFIS structures: experimental insights for hysteresis-free steep slope NC FETs
2019. 65th IEEE Annual International Electron Devices Meeting (IEDM), San Francisco, CA, Dec 09-11, 2019. DOI : 10.1109/IEDM19573.2019.8993523.Three-Dimensional Integrated Ultra-Low-Volume Passive Microfluidics with Ion-Sensitive Field-Effect Transistors for Multiparameter Wearable Sweat Analyzers
ACS Nano. 2018. DOI : 10.1021/acsnano.8b07413.Double gate n-type WSe2 FETs with high-k top gate dielectric and enhanced electrostatic control
2018. 48th European Solid-State Device Research Conference - ESSDERC 2018, 3-6 Sept. 2018, Dresden, Germany. p. 114 - 117. DOI : 10.1109/ESSDERC.2018.8486867.A Review and Mathematical Treatment of Infinity on the Smith Chart, 3D Smith Chart and Hyperbolic Smith Chart
Symmetry-Basel. 2018. DOI : 10.3390/sym10100458.Gate Leakage Tunneling Impact on the InAs/GaSb Heterojunction Electron-Hole Bilayer Tunneling Field-Effect Transistor
IEEE Transactions on Electron Devices. 2018. DOI : 10.1109/TED.2018.2866123.Genuinely Ferroelectric Sub-1-Volt-Switchable Nanodomains in HfxZr(1-x)O2 Ultrathin Capacitors
Acs Applied Materials & Interfaces. 2018. DOI : 10.1021/acsami.8b07988.A Reconfigurable Inductor Based on Vanadium Dioxide Insulator-to-Metal Transition
Ieee Microwave And Wireless Components Letters. 2018. DOI : 10.1109/LMWC.2018.2854961.Steep Slope Transistors for Quantum Computing
2018. IEEE 2nd Electron Devices Technology and Manufacturing Conference - EDTM 2018, Kobe, Japan, 13-16 March 2018. p. 56 - 58. DOI : 10.1109/EDTM.2018.8421422.Low power analog frontend for ISFET sensor readout
2018. 17th International Meeting on Chemical Sensors - IMCS 2018, Vienna, Austria, 2018-07-15 - 2018-07-19. DOI : 10.5162/IMCS2018/FE.1.Design Considerations of Ferroelectric Properties for Negative Capacitance MOSFETs
2018. p. 10 - 12. DOI : 10.1109/EDTM.2018.8421443.Effect of hysteretic and non-hysteretic negative capacitance on tunnel FETs DC performance
Nanotechnology. 2018. DOI : 10.1088/1361-6528/aaa590.MoS2/VO2 vdW heterojunction devices: Tunable rectifiers, photodiodes and field effect transistors
2018. IEDM, San Francisco, California, USA, December 2-6, 2017. p. 36.1.1 - 36.1.4. DOI : 10.1109/IEDM.2017.8268503.Polarity Control of Top Gated Black Phosphorous FETs by Workfunction Engineering of Pre-Patterned Au and Ag Embedded Electrodes
Ieee Journal Of The Electron Devices Society. 2018. DOI : 10.1109/JEDS.2018.2817289.CMOS 3D-Extended Metal Gate ISFETs with Near Nernstian Ion Sensitivity
2018. 76th Device Research Conference (DRC), Santa Barbara, CA, Jun 24-27, 2018. DOI : 10.1109/DRC.2018.8442197.The Future of Electronics: Silicon to Cloud Technologies
2018. 20th International Conference on Transparent Optical Networks (ICTON), Bucharest, ROMANIA, Jul 01-05, 2018. DOI : 10.1109/ICTON.2018.8473849.Novel Digital and Radio Frequency Electronic Functions Enabled by Steep-Slope Phase-Change Devices
Lausanne, EPFL, 2018. DOI : 10.5075/epfl-thesis-8596.An Experimental Study of Heterostructure Tunnel FET Nanowire Arrays: Digital and Analog Figures of Merit from 300K to 10K
2018. 64th IEEE Annual International Electron Devices Meeting (IEDM), San Francisco, CA, Dec 01-05, 2018. p. 13.5.1 - 13.5.4. DOI : 10.1109/IEDM.2018.8614665.Prospects for energy-efficient edge computing with integrated HfO2-based ferroelectric devices
2018. 26th IFIP/IEEE International Conference on Very Large Scale Integration (VLSI-SoC), Verona, ITALY, Oct 08-10, 2018. p. 180 - 183. DOI : 10.1109/VLSI-SoC.2018.8644809.Negative capacitance tunnel F£Ts: Experimental demonstration of outstanding simultaneous boosting of on-current, transconductance, overdrive, and swing
2018. 2017 Silicon Nanoelectronics Workshop, Kyoto, Japan, June 4-5, 2017. DOI : 10.23919/SNW.2017.8242270.Capillary flow device for bio-fluid collection with semiconductor sensors
EP3510403 ; EP3510403 ; US11389096 ; US2019246959 ; EP3510403 ; US2018070869 ; WO2018047125 . 2018.Near Hysteresis-Free Negative Capacitance InGaAs Tunnel FETs with Enhanced Digital and Analog Figures of Merit below V-DD=400mV
2018. 64th IEEE Annual International Electron Devices Meeting (IEDM), San Francisco, CA, Dec 01-05, 2018. p. 13.4.1 - 13.4.4. DOI : 10.1109/IEDM.2018.8614583.All CMOS Integrated 3D-Extended Metal Gate ISFETs for pH and Multi-Ion (Na+, K+, Ca2+) sensing
2018. 64th IEEE Annual International Electron Devices Meeting (IEDM), San Francisco, CA, Dec 01-05, 2018. p. 12.1.1 - 12.1.4. DOI : 10.1109/IEDM.2018.8614668.Embedded Passive Nano-Liter Micropump For Sweat Collection And Analysis
2018. 31st IEEE International Conference on Micro Electro Mechanical Systems (MEMS), Belfast, NORTH IRELAND, Jan 21-25, 2018. p. 1217 - 1220. DOI : 10.1109/MEMSYS.2018.8346782.Wearable System with Integrated Passive Microfluidics for Real-Time Electrolyte Sensing in Human Sweat
Lausanne, EPFL, 2018. DOI : 10.5075/epfl-thesis-8849.Computing with Ferroelectric FETs: Devices, Models, Systems, and Applications
2018. Proceedings Of The 2018 Design, Automation & Test In Europe Conference & Exhibition (Date), Dresden, GERMANY, Mar 19-23, 2018. p. 1289 - 1298. DOI : 10.23919/DATE.2018.8342213.Tunnel fet based non-volatile memory boosted by vertical band-to-band tunneling
US2018012659 . 2018.Lab on skin™: 3D monolithically integrated zero-energy micro/nanofludics and FD SOI ion sensitive FETs for wearable multi-sensing sweat applications
2017. 2017 IEEE International Electron Devices Meeting - IEDM 2017, San Francisco, CA, US, December 2-6, 2017. p. 18.1.1 - 18.1.4. DOI : 10.1109/IEDM.2017.8268413.Negative Capacitance Tunnel FETs: Experimental Demonstration of Outstanding Simultaneous Boosting of On-current, Transconductance, Overdrive, and Swing
Silicon Nanoelectronic Workshop, Kyoto, Japan, June 4-5, 2017.Lowering motional resistance by partially HfO2 gap filling in double-ended tuning fork MEMS resonators.
2017. 2017 Joint Conference of the European Frequency and Time Forum and IEEE International Frequency Control Symposium ((EFTF/IFC), BESANÇON, France, 9-13 July 2017. p. 805 - 806. DOI : 10.1109/FCS.2017.8089040.Modeling and optimization of Tunnel-FET architectures exploiting carrier gas dimensionality
Lausanne, EPFL, 2017. DOI : 10.5075/epfl-thesis-7587.Energy efficient computing and sensing in the Zettabyte era: From silicon to the cloud
2017. 2017 IEEE International Electron Devices Meeting (IEDM), San Francisco, CA, USA, 2-6 Dec, 2017. p. 1.2.1 - 1.2.8. DOI : 10.1109/IEDM.2017.8268307.Low Impedance ALD HfO2 Partially-Filled-Gap Flexural and Bulk MEMS Resonators Piezoresistively Detected for Distributed Mass Sensing
2017. DOI : 10.3390/proceedings1040391.Benchmarking of Homojunction Strained-Si NW Tunnel FETs for Basic Analog Functions
IEEE Transactions on Electron Devices. 2017. DOI : 10.1109/TED.2017.2665527.Complementary black phosphorous FETs by workfunction engineering of pre-patterned Au and Ag embedded electrodes
2017. Solid-State Device Research Conference (ESSDERC), 2017 47th European, September, 11-14, 2017. DOI : 10.1109/ESSDERC.2017.8066602.Negative Capacitance as Performance Booster for Tunnel FETs and MOSFETs: An Experimental Study
IEEE Electron Device Letters. 2017. DOI : 10.1109/LED.2017.2734943.Negative Capacitance Field Effect Transistors; Capacitance Matching and non-Hysteretic Operation
2017. Solid-State Device Research Conference (ESSDERC), 2017 47th European, Leuven, Belgium, 11-14 Sept. 2017. DOI : 10.1109/ESSDERC.2017.8066596.Negative Capacitance Tunnel FETs: Experimental Demonstration of Outstanding Simultaneous Boosting of On-current, Transconductance, Overdrive, and Swing
2017. Silicon Nanoelectronic Workshop, Kyoto, Japan, June 4-5, 2017. p. 7 - 8. DOI : 10.23919/SNW.2017.8242270.Shunt capacitive switches based on VO2 metal insulator transition for RF phase shifter applications
2017. ESSDERC 2017 - 47th IEEE European Solid-State Device Research Conference (ESSDERC), Leuven, Belgium, 11-14 September 2017. p. 232 - 235. DOI : 10.1109/ESSDERC.2017.8066634.A Steep-Slope Transistor Combining Phase-Change and Band-to-Band-Tunneling to Achieve a sub-Unity Body Factor
Scientific Reports. 2017. DOI : 10.1038/s41598-017-00359-6.Van der Waals MoS2/VO2 heterostructure junction with tunable rectifier behavior and efficient photoresponse
Scientific Reports. 2017. DOI : 10.1038/s41598-017-12950-y.Micromechanical resonators with sub-micron gaps filled with high-k dielectrics
Lausanne, EPFL, 2017. DOI : 10.5075/epfl-thesis-7938.Low-energy biomarker detection through charge-based impedance measurements
2016. 2016 IEEE SENSORS, Orlando, FL, USA, October 30th - November 3rd, 2016. DOI : 10.1109/ICSENS.2016.7808744.Quantum Mechanical Confinement in the Fin Electron-Hole Bilayer Tunnel Field-Effect Transistor
IEEE Transactions on Electron Devices. 2016. DOI : 10.1109/Ted.2016.2574893.Modeling and simulation of low power ferroelectric non-volatile memory tunnel field effect transistors using silicon-doped hafnium oxide as gate dielectric
Solid State Electronics. 2016. DOI : 10.1016/j.sse.2016.07.025.Design and fabrication of high-k filled sub-100 nm gap resonators with embedded dielectric field effect transistor for ultra high frequency applications
2016. 2016 IEEE Silicon Nanoelectronics Workshop (SNW), Honolulu, HI, USA, 12-13 June 2016. p. 70 - 71. DOI : 10.1109/SNW.2016.7577989.Reconfigurable electronics based on metal-insulator transition : steep-slope switches and high frequency functions enabled by Vanadium Dioxide
Lausanne, EPFL, 2016. DOI : 10.5075/epfl-thesis-6949.Band-to-band tunneling distance analysis in the heterogate electron-hole bilayer tunnel field-effect transistor
Journal Of Applied Physics. 2016. DOI : 10.1063/1.4940741.The Electron-Hole Bilayer TFET: Dimensionality Effects and Optimization
IEEE Transactions on Electron Devices. 2016. DOI : 10.1109/TED.2016.2557282.Condition for the negative capacitance effect in metal–ferroelectric–insulator–semiconductor devices
Nanotechnology. 2016. DOI : 10.1088/0957-4484/27/11/115201.Tri-Band, Polarization-Independent Reflectarray at Terahertz Frequencies: Design, Fabrication, and Measurement
IEEE Transactions On Terahertz Science And Technology. 2016. DOI : 10.1109/Tthz.2016.2522301.III-V Nanowire Hetero-junction Tunnel FETs integrated on Si
Lausanne, EPFL, 2016. DOI : 10.5075/epfl-thesis-7226.Single field effect transistor capacitor-less memory device and method of operating the same
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Nature Communications. 2016. DOI : 10.1038/ncomms11216.Double-Gate Negative-Capacitance MOSFET with PZT gate stack on Ultra-Thin Body SOI: an Experimentally Calibrated Simulation Study of Device Performance
IEEE Transactions on Electron Devices. 2016. DOI : 10.1109/Ted.2016.2616035.Switching Behavior Constraint in the Heterogate Electron–Hole Bilayer Tunnel FET: The Combined Interplay Between Quantum Confinement Effects and Asymmetric Configurations
IEEE Transactions on Electron Devices. 2016. DOI : 10.1109/TED.2016.2556083.Assessment of Confinement-Induced Band-to-Band Tunneling Leakage in the FinEHBTFET
2016. 2nd Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon (EURSOI-ULIS), TU Wien, Inst Microelectron, Vienna, AUSTRIA, JAN 25-27, 2016. p. 20 - 23. DOI : 10.1109/ULIS.2016.7440042.Enabling High Frequency Reconfigurable Functions with Graphene
Lausanne, EPFL, 2016. DOI : 10.5075/epfl-thesis-6980.Field-enhanced design of steep-slope VO2 switches for low actuation voltage
2016. ESSDERC 2016 - 46th European Solid-State Device Research Conference, Lausanne, Switzerland, 12-15 September 2016. p. 352 - 355. DOI : 10.1109/ESSDERC.2016.7599659.Heterogeneous Integration of Low Power pH FinFET sensors with Passive Capillary Microfluidics and miniaturized Ag/AgCl quasi-Reference Electrode
2016. European Solid-State Device Research Conference (ESSDERC), Lausanne, Switzerland, September 12-15, 2016. p. 452 - 455. DOI : 10.1109/ESSDERC.2016.7599683.Underlap counterdoping as an efficient means to suppress lateral leakage in the electron–hole bilayer tunnel FET
Semiconductor Science and Technology. 2016. DOI : 10.1088/0268-1242/31/4/045001.Ultra-Low Power Ion-Sensing Smart Platform for Noninvasive Healthcare Applications
2016. Smart Systems Integration, Munich, Germany, March 9-10, 2016.Graphene Quantum Capacitors for High Frequency Tunable Analog Applications
Nano Letters. 2016. DOI : 10.1021/acs.nanolett.5b05235.Hybrid phase-change — Tunnel FET (PC-TFET) switch with subthreshold swing < 10mV/decade and sub-0.1 body factor: Digital and analog benchmarking
2016. 2016 IEEE International Electron Devices Meeting (IEDM), San Francisco, CA, USA, 3-7 December 2016. p. 19.3.1 - 19.3.4. DOI : 10.1109/IEDM.2016.7838452.Graphene quantum capacitors for high-Q tunable LC-tanks for RF ICs
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2016. 2016 IEEE Silicon Nanoelectronics Workshop (SNW), Honolulu, HI, USA, 12-13 June 2016. p. 42 - 43. DOI : 10.1109/SNW.2016.7577976.Solid-gap resonators based on PVDF-TrFE
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2016. 2016 74th Annual Device Research Conference (DRC), Newark, DE, USA, 19-22 June 2016. p. 1 - 2. DOI : 10.1109/DRC.2016.7548493.Sub-20nm gaps in HSQ for ultra-scaled nanoelectronic devices
42nd Micro Nano Engineering, Vienna, Austria, Septemeber 19-23,2016.Investigation of the metal-insulator transition in VO2 for Electronic Switches with Sub-1mV/Decade Steep Subthreshold Slope
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2015. Device Research Conference (DRC), 2015 73rd Annual, Columbus, OH, USA, June 21-24, 2015. p. 267 - 268. DOI : 10.1109/DRC.2015.7175676.Self-biased reconfigurable graphene stacks for terahertz plasmonics
Nature Communications. 2015. DOI : 10.1038/ncomms7334.Evaluation of graphene for terahertz reflectarray antennas
2015. Graphene Week 2015, Manchester, UK, June, 22-26, 2015.Ultra Fine-Pitch TSV Technology for Ultra-Dense High-Q RF Inductors
2015. 2015 Symposium on VLSI Technology, Kyoto, Japan, June 15-19, 2015. p. T52 - T53. DOI : 10.1109/VLSIT.2015.7223700.Tunable Capacitors and Microwave Filters Based on Vanadium Dioxide Metal-Insulator Transition
2015. 18th International Conference on Solid-State Sensors, Actuators and Microsystems Transducers 2015, Anchorage, Alaska, USA, June 21-25, 2015. p. 311 - 314. DOI : 10.1109/TRANSDUCERS.2015.7180923.Spatial Variability in Large Area Single and Few-layer CVD Graphene
2015. Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon, Bologna, Italy, January 26-28, 2015.Fabrication process and characterization of suspended graphene membranes for RF NEMS capacitive switches
Microelectronic Engineering. 2015. DOI : 10.1016/j.mee.2015.01.032.Efficient quantum mechanical simulation of band-to-band tunneling
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2015. Transducers Conference, Anchorage, Alaska, US, June, 21-25, 2015. p. 2029 - 2032. DOI : 10.1109/TRANSDUCERS.2015.7181354.Design, Fabrication and Characterization of Terahertz Reflectarrays Based on a Silicon Substrate
2015. International Conference on Metamaterials, Photonic Crystals and Plasmonics, New York, US, August, 4-7, 2015.Two dimensional quantum mechanical simulation of low dimensional tunneling devices
Solid-State Electronics. 2015. DOI : 10.1016/j.sse.2015.05.030.Carbon nanotube gas sensor array for multiplex analyte discrimination
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2015. IEEE Electronic Components and Technology Conference, San Diego, California, USA, May 26-29, 2015. p. 585 - 590. DOI : 10.1109/ECTC.2015.7159650.Assessment of Pseudo-Bilayer Structures in the Heterogate Germanium Electron-Hole Bilayer Tunnel Field-Effect Transistor
Applied Physics Letters. 2015. DOI : 10.1063/1.4923467.Modeling the imaginary branch in III-V tunneling devices: Effective mass vs k.p
2015. 2015 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Washington DC, USA, 9-11 September 2015. p. 273 - 276. DOI : 10.1109/SISPAD.2015.7292312.Fabrication of CMOS-compatible abrupt electronic switches based on vanadium dioxide
Microelectronic Engineering. 2015. DOI : 10.1016/j.mee.2015.03.055.Large area suspended graphene for nano-mechanical devices
Physica Status Solidi B-Basic Solid State Physics. 2015. DOI : 10.1002/pssb.201552269.Graphene Negative Differential Resistance Circuit With Voltage-Tunable High Performance at Room Temperature
IEEE Electron Device Letters. 2015. DOI : 10.1109/LED.2015.2445858.A capacitance-voltage model for DG-TFET
2015. IEEE Silicon Nanoelectronics Workshop, Kyoto, Japan, 14-15 June 2015. p. 1 - 2.Tunnel Field Effect Transistors : from Steep-Slope Electronic Switches to Energy Efficient Logic Applications
Lausanne, EPFL, 2015. DOI : 10.5075/epfl-thesis-6802.Compact modeling of DG-Tunnel FET for Verilog-A implementation
2015. ESSDERC 2015 - 45th European Solid-State Device Research Conference, Graz, Austria, 14-18 September 2015. p. 40 - 43. DOI : 10.1109/ESSDERC.2015.7324708.Impact of Asymmetric Configurations on the Heterogate Germanium Electron-Hole Bilayer Tunnel Field-Effect Transistor Including Quantum Confinement
IEEE Transactions on Electron Devices. 2015. DOI : 10.1109/TED.2015.2476350.Reversible supramolecular modification of surfaces
Lausanne, EPFL, 2015. DOI : 10.5075/epfl-thesis-6861.Graphene for Nanoelectronic Applications
Lausanne, EPFL, 2015. DOI : 10.5075/epfl-thesis-6886.Response to Comment on Assessment of field-induced quantum confinement in heterogate germanium electron-hole bilayer tunnel field-effect transistor
Applied Physics Letters. 2015. DOI : 10.1063/1.4905866.Negative Differential Resistance in Top-Gated Chemical Vapor Deposition Grown Graphene Transistors
2015. Graphene Conference, Bilbao, Spain, March 10-13, 2015.Comment on 'Germanium electron-hole bilayer tunnel field-effect transistors with a symmetrically arranged double gale'
Semiconductor Science and Technology. 2015. DOI : 10.1088/0268-1242/30/12/128001.Sensing with Advanced Computing Technology: Fin Field-Effect Transistors with High-k Gate Stack on Bulk Silicon
ACS Nano. 2015. DOI : 10.1021/nn5064216.Solid-gap wine-glass mode disks VB-FET resonators applied to biomass sensing
Microelectronic Engineering. 2015. DOI : 10.1016/j.mee.2015.03.005.Steep-slope Metal-Insulator-Transition VO2 Switches with Temperature-Stable High ION
IEEE Electron Device Letters. 2015. DOI : 10.1109/LED.2015.2454535.Practical Applications of Tunnel Field Effect Transistors
Lausanne, EPFL, 2015. DOI : 10.5075/epfl-thesis-6333.CMOS-compatible abrupt switches based on VO2 metal-insulator transition
2015. Ultimate Integration on Silicon, Bologna, Italy, January 26-28, 2015. p. 53 - 56. DOI : 10.1109/ULIS.2015.7063771.Room-Temperature Negative Differential Resistance in Graphene Field Effect Transistors: Experiments and Theory
ACS Nano. 2015. DOI : 10.1021/nn5059437.Investigation of Tunnel Field-Effect Transistors as a Capacitor-less Memory Cell
Applied Physics Letters. 2014. DOI : 10.1063/1.4867527.Conformal Mapping Based DC Current Model For Double Gate Tunnel FETs
2014. 15th International Conference on Ultimate Integration on Silicon (ULIS), Stockholm ,Sweden, April 7-9, 2014. p. 85 - 88. DOI : 10.1109/ULIS.2014.6813922.Analytical Compact Model in Verilog-A for Electrostatically Actuated Ohmic Switches
IEEE Transactions on Electron Devices. 2014. DOI : 10.1109/TED.2014.2318199.Component design and testing for a miniaturised autonomous sensor based on a nanowire materials platform
2014. Conference on Smart Sensors, Actuators and MEMS within the SPIE EUROPE Symposium on Microtechnologies. p. 971 - 988. DOI : 10.1007/s00542-014-2100-4.The top-down fabrication of a 3D-integrated, fully CMOS-compatible FET biosensor based on vertically stacked SiNWs and FinFETs
Sensors and Actuators B: Chemical. 2014. DOI : 10.1016/j.snb.2013.11.123.Measurement of biased graphene stacks at terahertz: dynamic reconfiguration and hysteresis
2014. 8th European Conference on Antennas and Propagation (EuCAP), The Hague, The Netherlands, April, 6-11, 2014.Junctionless nano-electro-mechanical resonant transistor
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Applied Physics Letters. 2014. DOI : 10.1063/1.4904026.Electron mobility extraction in triangular gate-all-around Si nanowire junctionless nMOSFETs with cross-section down to 5 nm
Solid-State Electronics. 2014. DOI : 10.1016/j.sse.2014.04.007.Investigation of Partially Gated Si Tunnel FETs for Low Power Integrated Optical Sensing
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Lausanne, EPFL, 2014. DOI : 10.5075/epfl-thesis-6258.Gas sensing technology based on carbon nanotube arrays
Lausanne, EPFL, 2014. DOI : 10.5075/epfl-thesis-6281.Two Dimensional Quantum Mechanical Simulation of Low Dimensional Tunneling Devices
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IEEE Transactions on Nanotechnology. 2014. DOI : 10.1109/TNANO.2013.2290945.Electromechanical design space exploration for electrostatically actuated ohmic switches using extended parallel plate compact model
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IEEE Journal of the Electron Devices Society. 2014. DOI : 10.1109/JEDS.2014.2382759.High-yield, in-situ fabrication and integration of horizontal carbon nanotube arrays at the wafer scale for robust ammonia sensors
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CATRENE Scientific Committee Workshop 2014, Brussels, Belgium, 2014-02-04.High-K Dielectric FinFETs on Si-Bulk for Ionic and Biological Sensing Integrated Circuits
Lausanne, EPFL, 2014. DOI : 10.5075/epfl-thesis-6134.Single Crystal Silicon UHF Wine-Glass Ring Resonator with HfO2 Solid Dielectric Gap embedded in a Field Effect Transistor
40th Micro and Nano Engineering Conference, Lausanne, CH, September 22-26, 2014.Assessment of field-induced quantum confinement in heterogate germanium electron-hole bilayer tunnel field-effect transistor
Applied Physics Letters. 2014. DOI : 10.1063/1.4894088.Junctionless Silicon Nanowire Resonator
IEEE Journal of the Electron Devices Society. 2014. DOI : 10.1109/JEDS.2013.2295246.Electrical characterization of high performance, liquid gated vertically stacked SiNW-based 3D FET biosensors
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2014. SOI-3D-Subthreshold Microelectronics Technology Unified Conference (S3S), San Francisco, California, USA, December 6-9, 2014. DOI : 10.1109/S3S.2014.7028203.Compact Modeling of Homojunction Tunnel FETs
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2014. 72nd Device Research Conference, Santa Barbara, California, USA, June 22-25, 2014. p. 29 - 30. DOI : 10.1109/DRC.2014.6872284.Growth optimization of vanadium dioxide films on SiO2/Si substrates
2014. 40th Micro and Nano Engineering, Lausanne, Switzerland, September 22-26, 2014.Ferroelectric tunnel fet switch and memory
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2013. 2013 71st Annual Device Research Conference (DRC), Notre Dame, IN, USA, 23-26 06 2013. p. 1 - 2. DOI : 10.1109/DRC.2013.6633887.Tunneling and Occupancy Probabilities: How Do They Affect Tunnel-FET Behavior?
IEEE Electron Device Letters. 2013. DOI : 10.1109/LED.2013.2257665.Sustained Nano-Mechanical Oscillation of a Resonant-Body Transistor by Frequency-Modulated Heterodyne Phase-Locked-Loop
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IEEE Transactions on Electron Devices. 2013. DOI : 10.1109/TED.2013.2274198.Tunnel FET with non-uniform gate capacitance for improved device and circuit level performance
Solid-State Electronics. 2013. DOI : 10.1016/j.sse.2013.02.032.Mobility Extraction Assessment in GAA Si NW JL FETs with Cross-Section Down to 5 nm
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2013. 43rd Solid-State Device Research Conference (ESSDERC), Bucharest, Romania, September 16-20, 2013. DOI : 10.1109/ESSDERC.2013.6818875.Gate-all-around buckled dual Si nanowire nMOSFETs on bulk Si for transport enhancement and digital logic
Microelectronic Engineering. 2013. DOI : 10.1016/j.mee.2013.02.003.Towards Nanomechanics and Nanoelectronics on a Single Chip
Lausanne, EPFL, 2013. DOI : 10.5075/epfl-thesis-5888.Innovative Tunnel Field-Effect Transistor Architectures
Lausanne, EPFL, 2013. DOI : 10.5075/epfl-thesis-5691.Encapsulated Low Frequency Vibrating Body Field Effect Resonator
Lausanne, EPFL, 2013. DOI : 10.5075/epfl-thesis-5634.Large-scale, in-situ integration of horizontal carbon nanotube arrays into gas sensing devices
Micronarc Alpine Meeting, 4th edition, Villars-sur-Ollon, Switzerland, January 13-15, 2013.A study on 1T Capacitor-less Tunnel FET DRAM Exploiting Ungated Body
2013. ISDRS 2013, Washington DC, USA, December 11-13, 2013.Nanoelectromechanical microwave switch based on graphene
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2013. 39th International Conference on Micro and Nano Engineering, London, UK, September 16-19, 2013.Ultra low power NEMFET based logic
2013. 2013 IEEE International Symposium on Circuits and Systems (ISCAS), Beijing, China, 19-23 05 2013. p. 566 - 569. DOI : 10.1109/ISCAS.2013.6571905.An innovative band-to-band tunneling analytical model and implications in compact modeling of tunneling-based devices
Applied Physics Letters. 2013. DOI : 10.1063/1.4821100.Carbon Nanotube Precise Assembly for CMOS and NEMS Applications
Lausanne, EPFL, 2013. DOI : 10.5075/epfl-thesis-5651.High-k dielectric FinFETs towards Sensing Integrated Circuits
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2013. Annual meeting of the GDR-I GNT: Graphene and Nanotubes Science and Applications, Ecully, France, January 23-27, 2012.FinFET integrated low-power circuits for enhanced sensing applications
Sensors and Actuators B: Chemical. 2013. DOI : 10.1016/j.snb.2013.06.031.Junctionless silicon nanowire transistors for the tunable operation of a highly sensitive, low power sensor
Sensors and Actuators B: Chemical. 2013. DOI : 10.1016/j.snb.2013.03.028.Beyond Scaling : Physics and Modeling for Pushing the Frontiers of Low-Power Devices
Lausanne, EPFL, 2012. DOI : 10.5075/epfl-thesis-5504.Vertically stacked Si nanostructures for biosensing applications
Microelectronic Engineering. 2012. DOI : 10.1016/j.mee.2012.03.017.Self-Assembled Nano-Electro-Mechanical Tri-state Carbon Nanotube Switches for Reconfigurable Integrated Circuits
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2012. IEEE NANO 2012 - 12th International Conference on Nanotechnology, Birmingham, UK, August, 20-23, 2012. DOI : 10.1109/NANO.2012.6322060.New Tunnel-FET Architecture with Enhanced Ion and Improved Miller Effect for Energy Efficient Switching
2012. 70th Device Research Conference, State College, PA, USA, June 18-20, 2012. p. 131 - 132. DOI : 10.1109/DRC.2012.6256999.From All-Si Nanowire TFETs Towards III-V TFETs
Lausanne, EPFL, 2012. DOI : 10.5075/epfl-thesis-5534.Experimental confirmation of temperature dependent negative capacitance in ferroelectric field effect transistor
Applied Physics Letters. 2012. DOI : 10.1063/1.4704179.A Novel Extraction Method and Compact Model for the Steepness Estimation of FDSOI TFET Lateral Junction
IEEE Electron Device Letters. 2012. DOI : 10.1109/LED.2011.2174027.Nanoelectronics: Ferroelectric devices show potential
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IEEE Transactions on Electron Devices. 2012. DOI : 10.1109/TED.2012.2220363.RF MEMS Shunt Capacitive Switches Using AlN Compared to Si3N4 Dielectric
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Microelectronic Engineering. 2012. DOI : 10.1016/j.mee.2012.07.077.Single Active Nanoelectromechanical Tuning Fork Front-End Radio-Frequency Receiver
Nanotechnology. 2012. DOI : 10.1088/0957-4484/23/22/225501.Phase-locked loop based on nanoelectromechanical resonant-body field effect transistor
Applied Physics Letters. 2012. DOI : 10.1063/1.4758991.Multi-gate Si nanowire MOSFETs : fabrication, strain engineering and transport analysis
Lausanne, EPFL, 2012. DOI : 10.5075/epfl-thesis-5507.Study on dual-lateral-gate suspended-body single-walled carbon nanotube field-effect transistors
Solid-State Electronics. 2012. DOI : 10.1016/j.sse.2012.04.022.Negative Capacitance Transistor
Lausanne, EPFL, 2012. DOI : 10.5075/epfl-thesis-5276.La récolte d’énergie pour les micro et nanosystèmes autonomes
Journal ElectroSuisse. 2012.In-situ grown horizontal carbon nanotube membrane
Microelectronic Engineering. 2012. DOI : 10.1016/j.mee.2012.05.017.Self-Aligned Lateral Dual-Gate Suspended-Body Single-Walled Carbon Nanotube Field-Effect Transistors
Applied Physics Letters. 2012. DOI : 10.1063/1.3682085.High-Q 3D Embedded Inductors using TSV for RF MEMS Tunable Bandpass Filters (4.65-6.8 GHz)
2012. 42nd European Microwave Conference, Amsterdam, Netherlands. p. 822 - 825.The electron–hole bilayer tunnel FET
Solid-State Electronics. 2012. DOI : 10.1016/j.sse.2012.04.016.Understanding the Superlinear Onset of Tunnel-FET Output Characteristic
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2012. 2012 IEEE International Electron Devices Meeting IEDM, San Francisco, USA, December 10-13, 2012. p. 15.2.1 - 15.2.4. DOI : 10.1109/IEDM.2012.6479046.In-situ grown horizontal carbon nanotube membranes for sensitive & selective gas sensing
LEA micro-engineering workshop, 11th edition, Arc-et-Senans, France, September 6-7, 2012.On the Static and Dynamic Behavior of the Germanium Electron-Hole Bilayer Tunnel FET
IEEE Transactions on Electron Devices. 2012. DOI : 10.1109/Ted.2012.2211600.Tunnel FET with non-uniform gate capacitance for improved device and circuit level performance
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2012. IEEE International Electron Devices Meeting IEDM, San Francisco, USA, Dec 10-13, 2012. p. 15.3.1 - 15.3.4. DOI : 10.1109/IEDM.2012.6479047.Gate-All-Around Buckled Dual Si Nanowire nMOSFETs on Bulk Si for Transport Enhancement and Digital Logic Application
2012. 38th International Conference on Micro and Nano Engineering (MNE), Toulouse, France, September 16-20, 2012.Organic half-wave rectifier fabricated by stencil lithography on flexible substrate
Microelectronic Engineering. 2012. DOI : 10.1016/j.mee.2012.07.110.Streched organic transistors maintain mobility on flexible substrates
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2011. Transducers’11, Beijing, China, June 5-9, 2011. p. 2730 - 2733. DOI : 10.1109/TRANSDUCERS.2011.5969810.Accumulation-Mode GAA Si NW nFET with sub-5 nm cross-section and high uniaxial tensile strain
2011. The 41st European Solid-State Device Research Conference (IEEE ESSDERC), Helsinki, Finland, 12-16 Sep. 2011. p. 311 - 314. DOI : 10.1109/ESSDERC.2011.6044172.Integration for All Configurations
IEEE Microwave Magazine. 2011. DOI : 10.1109/MMM.2011.942700.Scalable conformal array for multi-gigabit body centric wireless communication
2011. 5th International Symposium on Medical Information & Communication Technology (ISMICT), 2011, Montreux, Switzerland, March 27-30, 2011. p. 74 - 78. DOI : 10.1109/ISMICT.2011.5759800.Self-Aligned Double-Gate Suspended-Body Single-Walled Carbon Nanotube Field-Effect-Transistors
2011. ESSDERC 11, Helsinki, Finland, Sept. 12-16, 2011. p. 315 - 318. DOI : 10.1109/ESSDERC.2011.6044171.A Microfabricated 1-D Metamaterial Unit Cell Matched From DC to Millimeter-Waves
IEEE Microwave and Wireless Components Letters. 2011. DOI : 10.1109/LMWC.2011.2162617.Ultra low power: Emerging devices and their benefits for integrated circuits
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Microelectronic Engineering. 2011. DOI : 10.1016/j.mee.2011.01.026.Electron-hole bilayer tunnel FET for steep subthreshold swing and improved ON current
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Nature. 2011. DOI : 10.1038/nature10679.Local stressors to accommodate 1.2 to 5.6 GPa uniaxial tensile stress in suspended gate-all-around Si nanowire nMOSFETs by elastic local buckling
2011. International Semiconductor Device Research Symposium (IEEE ISDRS, biennial), University of Maryland, College Park, MD, USA, December 7-9, 2011. p. 1 - 2. DOI : 10.1109/ISDRS.2011.6135148.RF-MEMS switches with AlN dielectric and their applications
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2011. VLSI-TSA 2011, Hsinchu, Taiwan, April 25-27, 2011.An Improved Precise Positioning Method for Self-Assembly of Lateral-Gate Carbon Nanotube Field-Effect-Transistors
2011. MNE 11, Berlin, Germany, Sept. 19-23, 2011.Guardian Angels for a Smarter Life: Enabling a Zero-Power Technological Platform for Autonomous Smart Systems
2011. 2nd European Future Technologies Conference and Exhibition (FET), Budapest, HUNGARY, May 04-06, 2011. p. 43 - 46. DOI : 10.1016/j.procs.2011.12.016.Resist-assisted assembly of single-walled carbon nanotube devices with nanoscale precision
Carbon. 2011. DOI : 10.1016/j.carbon.2011.12.006.The Vibrating Body Transistor
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2011. 2011 69th Annual Device Research Conference (DRC), Santa Barbara, CA, USA, June 20-22, 2011. p. 111 - 112. DOI : 10.1109/DRC.2011.5994440.Uniaxially tensile strained accumulation-mode gate-all-around Si nanowire nMOSFETs
2011. 69th annual IEEE Device Research Conference (IEEE DRC), Santa Barbara, California, USA, 20-22 June 2011. p. 145 - 146. DOI : 10.1109/DRC.2011.5994458.Horizontally and on-site grown carbon nanotube membrane for sensitive and selective gas sensing
2011. 37th International Conference on Micro & Nano Engineering, Berlin, Germany, September 19-23, 2011.Modeling the Temperature Dependence of Fe-FET Static Characteristics Based on Landau's Theory
Ieee Transactions On Electron Devices. 2011. DOI : 10.1109/TED.2011.2160868.Tunneling path impact on semi-classical numerical simulations of TFET devices
2011. 2011 12th International Conference on Ultimate Integration on Silicon (ULIS), Cork, Ireland, 14-16 03 2011. p. 1 - 4. DOI : 10.1109/ULIS.2011.5758002.Miniature Sensor Node with Conformal Phased Array
Radioengineering. 2011.A tunneling field-effect transistor exploiting internally combined band-to-band and barrier tunneling mechanisms
Applied Physics Letters. 2011. DOI : 10.1063/1.3569760.SWNT array resonant gate MOS transistor
Nanotechnology. 2011. DOI : 10.1088/0957-4484/22/5/055204.Self-Assembly of Doubly-Clamped/Cantilevered Carbon Nanotube Arrays by a Precise Positioning Method
2011. International Conference on the Science and Application of Nanotubes (NT'11), Cambridge, UK, July 11-16, 2011.Integration of Engineered Source and Drain Extensions in Double Gate Mosfet with Sub-32nm Channel Length
Lausanne, EPFL, 2011. DOI : 10.5075/epfl-thesis-4824.Ferroelectric Field Effect Transistor for Memory and Switch Applications
Lausanne, EPFL, 2011. DOI : 10.5075/epfl-thesis-4990.High aspect ratio sub-micron trenches on silicon-on-insulator and bulk silicon
Microelectronic Engineering. 2011. DOI : 10.1016/j.mee.2011.02.030.A quasi-analytical model for nanowire FETs with arbitrary polygonal cross section
Solid-State Electronics. 2010. DOI : 10.1016/j.sse.2010.04.039.Dipole antenna and distributed MEMS phase shifter fully integrated in a single wafer process for beam steering applications
Microelectronic Engineering. 2010. DOI : 10.1016/j.mee.2009.10.009.Ferroelectric transistors with improved characteristics at high temperature
Applied Physics Letters. 2010. DOI : 10.1063/1.3467471.Carbon nanotube vertical membranes for electrostatically actuated micro-electro-mechanical devices
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Nature Nanotechnology. 2010. DOI : 10.1038/nnano.2010.38.Nano-Electro-Mechanical vibrating body FET resonator for high frequency integrated oscillators
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2010. 40th European Solid-State Device Research Conference (ESSDERC)/36th European Solid-State Circuits Conference (ESSCIRC), Seville, SPAIN, Sep 14-16, 2010. p. 234 - 239. DOI : 10.1016/j.sse.2011.06.035.Demonstrations of Wireless Autonomous Sensors for Aeronautical Applications
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Solid State Electronics. 2010. DOI : 10.1016/j.sse.2010.04.037.Wafer Level Assembly of Single-Walled Carbon Nanotube Arrays with Precise Positioning
2010. Nanotech 2010, Anaheim, CA, USA.Test structure and method for the experimental investigation of internal voltage amplification and surface potential of ferroelectric MOSFETs
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Lausanne, EPFL, 2010. DOI : 10.5075/epfl-thesis-4729.Resonant-Body Fin-FETs with sub-nW power consumption
2010. International Electron Devices Meeting (IEDM), San Francisco, CA, Dec 06-08, 2010. p. 7.6.1 - 7.6.4. DOI : 10.1109/IEDM.2010.5703318.Metal-Ferroelectric-Metal-Oxide-Semiconductor Field Effect Transistor with Sub-60mV/decade Subthreshold Swing and Internal Voltage Amplification
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2010. MNE 2010, Genoa, Italy, September 19-22, 2011.Carbon Nanotube Electromechanical Devices for Radio Frequency Applications
Lausanne, EPFL, 2010. DOI : 10.5075/epfl-thesis-4800.Tunable MEMS capacitors using vertical carbon nanotube arrays grown on metal lines
Nanotechnology. 2010. DOI : 10.1088/0957-4484/22/2/025203.Active Microelectromechanical Resonator : The Vibrating Body Field Effect Transistor
Lausanne, EPFL, 2010. DOI : 10.5075/epfl-thesis-4673.The Hysteretic Ferroelectric Tunnel FET
IEEE Transactions on Electron Devices. 2010. DOI : 10.1109/TED.2010.2079531.Abrupt switch based on internally combined Band-To-Band and Barrier Tunneling mechanisms
2010. ESSDERC 2010 - 40th European Solid State Device Research Conference, Sevilla, Spain, September 14-16, 2010. p. 353 - 356. DOI : 10.1109/ESSDERC.2010.5618215.An experimental investigation of the surface potential in ferroelectric P(VDF-TrFE) FETs
2010. 35th International Conference on Micro-and Nano-Engineering, Ghent, BELGIUM, Sep 28-Oct 01, 2009. p. 1607 - 1609. DOI : 10.1016/j.mee.2009.10.047.RF NEM capacitive switch based on dense horizontal arrays of CNTs
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Solid-State Electronics. 2010. DOI : 10.1016/j.sse.2010.04.030.Silicon nanowires with lateral uniaxial tensile stress profiles for high electron mobility gate-all-around MOSFETs
Microelectronic Engineering. 2010. DOI : 10.1016/j.mee.2009.11.024.Capacitive nanoelectromechanical switch based on suspended carbon nanotube array
Applied Physics Letters. 2010. DOI : 10.1063/1.3525165.RF MEMS Switches for Wide-band (5 - 40 GHz), Tuneable Filters and DMTL Phase Shifters
Lausanne, EPFL, 2010. DOI : 10.5075/epfl-thesis-4737.The high-mobility bended n-channel silicon nanowire transistor
IEEE Transactions on Electron Devices. 2010. DOI : 10.1109/TED.2010.2040939.Non-hysteretic ferroelectric tunnel FET with improved conductance at Curie temperature
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2010. 23rd IEEE International Conference on Micro Electro Mechanical Systems (MEMS 2010), Hong Kong, PEOPLES R CHINA, Jan 24-28, 2010. p. 112 - 115. DOI : 10.1109/MEMSYS.2010.5442552.Heterogeneous Integration for Novel Functionality
2010. 3D System Integration Conference (3DIC), Munic, Germany, November 16-18, 2010. p. 1 - 19. DOI : 10.1109/3DIC.2010.5751423.Electrical modeling and design of a wafer-level package for MEM resonators
IEEE Transactions on Advanced Packaging. 2010. DOI : 10.1109/TADVP.2010.2043101.Nano-Electro-Mechanical Switches Based on Carbon Nanotubes Arrays
Lausanne, EPFL, 2010. DOI : 10.5075/epfl-thesis-4774.Vibrating Body Transistors: Enabling Fin-FET Nano-Electro-Mechanical Resonators
2010. 2010 IEEE International Frequency Control Symposium, New Port Beach, CA, Jun 01-04, 2010. p. 333 - 333. DOI : 10.1109/FREQ.2010.5556318.Three-level Stencil Alignment Fabrication of a High-k Gate Stack Organic Thin Film Transistor
36th International Conference on Micro & Nano Engineering (MNE), Genoa, Italy, September 19-22, 2010.Organic Thin Film Transistors on Flexible Polyimide Substrates Fabricated by Full Wafer Stencil Lithography
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Solid-State Electronics. 2010. DOI : 10.1016/j.sse.2010.04.019.The Curie temperature as a key design parameter of ferroelectric Field Effect Transistors
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Microelectronic Engineering. 2010. DOI : 10.1016/j.mee.2009.12.036.9 MHz vibrating body FET tuning fork oscillator
2009. Joint Meeting of the 23rd European Frequency and Time Forum/IEEE International Frequency Control Symposium, Besancon, FRANCE, Apr 20-24, 2009. p. 520 - 523. DOI : 10.1109/FREQ.2009.5168235.A study of polarization effects in metal-ferroelectric-oxide-semiconductor capacitors
2009. 32nd International Semiconductor Conference, Sinaia, ROMANIA, Oct 12-14, 2009. p. 517 - 520. DOI : 10.1109/SMICND.2009.5336660.Reliability of rf mems capacitive switches and distributed mems phase shifters using aln dielectric
2009. 22nd IEEE International Conference on Micro Electro Mechanical Systems (MEMS), Sorrentto, Italy, January 25-29, 2009.. p. 638 - 641. DOI : 10.1109/MEMSYS.2009.4805463.Lateral Strain Profile as Key Technology Booster for All-Silicon Tunnel FETs
Ieee Electron Device Letters. 2009. DOI : 10.1109/LED.2009.2018127.Microelectromechanical Metal-Air-Insulator-Semiconductor (MEM-MAIS) Diode: A Novel Hybrid Device for ESD Protection
2009. 2009 IEEE 22nd International Conference on Micro Electro Mechanical Systems (MEMS), Sorrento, Italy, 25-29 01 2009. p. 132 - 135. DOI : 10.1109/MEMSYS.2009.4805336.Tunable band-stop filter based on single RF MEMS capacitive shunt switch with meander arm inductance
2009. 39th European Solid-State Device Research Conference (ESSDERC), Athens, Greece, September 15-19, 2009. p. 331 - 334. DOI : 10.1109/ESSDERC.2009.5331304.Centre frequency and bandwidth tunable bandpass filter based on RF MEMS (10-14GHz)
2009. 37th European Microwave Conference, Rome, ITALY, Sep 29-Oct 01, 2009. DOI : 10.23919/EUMC.2009.5296302.Sub-100μW low power operation of vibrating body FETs
2009. International Symposium on VLSI Technology, Systems and Applications, Hsinchu, TAIWAN, Apr 27-29, 2009. p. 129 - 130. DOI : 10.1109/VTSA.2009.5159324.Investigation of bias-dependent series resistances and barrier height in Double Gate Schottky MOSFETs
2009. IEEE International SOI Conference 2009, Foster City, CA, Oct 05-08, 2009. p. 131 - 132. DOI : 10.1109/SOI.2009.5318738.X-band MEMS technology for integrated Radar modules
2009. p. 254 - 257.Retention in nonvolatile silicon transistors with an organic ferroelectric gate
Applied Physics Letters. 2009. DOI : 10.1063/1.3158959.Nanogap MEM resonators on SOI
Lausanne, EPFL, 2009. DOI : 10.5075/epfl-thesis-4484.Asymmetrically strained all-silicon Tunnel FETs featuring 1V operation
2009. p. 452 - 455. DOI : 10.1109/ESSDERC.2009.5331615.MEMS technology for Radar front end modules.
2009. International Radar Conference - Surveillance for a Safer World, 2009. RADAR, October 12-16, 2009.Highly Tunable Band-Stop Filters Based on AIN RF MEM Capacitive Switches with Inductive Arms and Zipping Capacitive Coupling
2009. IEEE International Electron Devices Meeting (IEDM 2009), Baltimore, MD, Dec 07-09, 2009. p. 753 - 756. DOI : 10.1109/IEDM.2009.5424217.Small signal modeling of charge and piezoresistive modulations in active MEM resonators
2009. p. 379 - 382. DOI : 10.1109/ESSDERC.2009.5331508.Bulk Lateral MEM Resonator on Thin SOI With High Q-Factor
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2009. MNE 2009, Ghent, Belgium, 28 Sep.-1 Oct. 2009.A Study of Deterministic Positioning of Carbon Nanotubes by Dielectrophoresis
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2009. 10th International Symposium of RF MEMS and RF Microsystems (MEMSWAVE), Trento, Italy, July 6-8, 2009.High-quality factor MEMS based oscillator: Silicon 9 MHz oscillator with low phase noise and high quality factor
2009. 16th International Conference Mixed Design of Integrated Circuits and Systems, Lodz, POLAND, Jun 25-27, 2009. p. 276 - 281.Micro-electro-mechanical capacitors based on vertical carbon nanotube arrays
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Microelectronic Engineering. 2009. DOI : 10.1016/j.mee.2009.03.086.Optimization of the channel lateral strain profile for improved performance of multi-gate MOSFETs
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2009. INFOS 2009 (biennial), Cambridge, the UK, 28 June-1 July 2009.Double-Gate Pentacene TFTs with Improved Control in Subthreshold Region
2009. 39th European Solid-State Device Research Conference (ESSDERC), Athens, Greece, September 14-18, 2009. p. 205 - 208. DOI : 10.1109/ESSDERC.2009.5331352.Ad-Hoc Wireless Sensor Networks For Exploration Of Solar-System Bodies
Acta Astronautica. 2009. DOI : 10.1016/j.actaastro.2008.11.012.An experimental study of temperature influence on electrical characteristics of ferroelectric P(VDF-TrFE) FETs on SOI
2009. 2009 Proceedings of the European Solid State Device Research Conference (ESSDERC), Athens, Greece, 14-18 09 2009. p. 97 - 100. DOI : 10.1109/ESSDERC.2009.5331330.Micro-Electro-Mechanical Switch Based on Suspended Horizontal Dense Mat of CNTs by FIB Nanomanipulation
2009. 23rd Eurosensors Conference, Lausanne, SWITZERLAND, Sep 06-09, 2009. p. 1411 - 1414. DOI : 10.1016/j.proche.2009.07.352.Ultra-Sensitive Capacitive Detection Based on SGMOSFET Compatible With Front-End CMOS Process
IEEE Journal of Solid-State Circuits. 2009. DOI : 10.1109/JSSC.2008.2007448.0-level Vacuum Packaging RT Process for MEMS Resonators
2008.Fabrication of MEMS Resonators in Thin SOI
2008.Abrupt NMOS Inverter Based on Punch-Through Impact Ionization With Hysteresis in the Voltage Transfer Characteristics
IEEE Electron Device Letters. 2008. DOI : 10.1109/LED.2008.2001632.Low voltage Ferroelectric FET with sub-100nm copolymer P(VDF-TrFE) gate dielectric for non-volatile 1T memory
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2008. 34th International Conference on Micro- and Nano-Engineering, Athens, GREECE, Sep 15-18, 2008. p. 1074 - 1077. DOI : 10.1016/j.mee.2009.02.007.Thermally Stable Distributed MEMS Phase Shifter for Airborne and Space Applications
2008. 38th European Microwave Conference, Amsterdam, The Netherlands, November 28-31, 2008. p. 100 - 103. DOI : 10.1109/EUMC.2008.4751397.Focussed ion beam based fabrication of micro-electro-mechanical resonators
Microsystem Technologies. 2008. DOI : 10.1007/s00542-007-0464-4.Study of n- and p-type dopants activation and dopants behavior with respect to annealing conditions in silicon germanium-on-insulator (SGOI)
Materials Science and Engineering: B. 2008. DOI : 10.1016/j.mseb.2008.10.023.DRAM Based on Hysteresis in Impact Ionization Single-Transistor-Latch
2008.SWCNT/MWCNT Crossed Junction by Two-Step Dielectrophoresis
2008.High-Isolation Shunt-Series MEMS Switch for a Wide Frequency Range (6-40GHz)
2008. 9th International Symposium of RF MEMS and RF Microsystem (MEMSWAVE), Heraklion (Greece), July 1-3, 2008.Analytical Modeling of the Suspended-Gate FET and Design Insights for Low-Power Logic
IEEE Transactions on Electron Devices. 2008. DOI : 10.1109/TED.2007.911070.Non-hysteretic punchthrough impact ionization MOS (PIMOS) transistor: Application to abrupt inverter and NDR circuits
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2008.RF MEMS capacitive switch on semi-suspended CPW using low-loss high-resistivity silicon substrate
Microelectronic Engineering. 2008. DOI : 10.1016/j.mee.2008.01.093.In-Plane Silicon-On-Nothing Nanometer-Scale Resonant Suspended Gate MOSFET for In-IC Integration Perspectives
IEEE Electron Device Letters. 2008. DOI : 10.1109/LED.2008.919781.Investigation of Strain Profile Optimization in Gate-All-Around Suspended Silicon Nanowire FET
2008. IEEE ESSDERC 2008, Edinburgh, Scotland, Sep. 15-19, 2008.NANOSIL network of excellence--silicon-based nanostructures and nanodevices for long-term nanoelectronics applications
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Solid-State Electronics. 2008. DOI : 10.1016/j.sse.2008.04.013.Nano-gap micro-electro-mechanical bulk lateral resonators with high quality factors and low motional resistances on thin silicon-on-insulator
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IEEE Transactions on Nanotechnology. 2008. DOI : 10.1109/TNANO.2008.2007215.Nanoscale strain characterisation for ultimate CMOS and beyond
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2008. 37th European Solid-State Device Research Conference, Munich, GERMANY, Sep 11-13, 2007. p. 426 - 429. DOI : 10.1109/ESSDERC.2007.4430969.Impact of Lateral Nonuniform Doping and Hot Carrier Injection on Capacitance Behavior of High Voltage MOSFETs
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Romanian Journal Of Information Science And Technology. 2008.Three-dimensional electronic devices fabricated on a top-down silicon nanowire platform
Lausanne, EPFL, 2008. DOI : 10.5075/epfl-thesis-4068.1T Memory Cell Based on PVDF-TrFE Field Effect Transistor
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Lausanne, EPFL, 2007. DOI : 10.5075/epfl-thesis-3831.High Quality Factor Copper Inductors Integrated in Deep Dry Etched Quartz Substrates
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2005. 31th International Conference on Micro- and Nano-Engineering (MNE), Vienna, Austria, September 19-22, 2005.Silicon nanowires patterning by sidewall and nano-oxidation processing
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IEEE SENSORS JOURNAL. 2005. DOI : 10.1109/JSEN.2004.839895.Controlled Electronic and Magnetic Landscape in Self-Assembled Complex Oxide Heterostructures
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Lausanne, EPFL, 2023. DOI : 10.5075/epfl-thesis-10096.Static and Dynamic Stochastic Analysis of a Temperature-Sensitive VO<sub>2</sub> Spiking Neuron
2023. IEEE 53rd European Solid-State Device Research Conference (ESSDERC), Lisbon, PORTUGAL, SEP 11-14, 2023. p. 81 - 84. DOI : 10.1109/ESSDERC59256.2023.10268509.Monitoring of Protein and pH Levels in Human Biofluids using FD-SOI Silicon Nanowire Arrays
Lausanne, EPFL, 2023. DOI : 10.5075/epfl-thesis-9998.Model-Based ISO 14971 Risk Management of EEG-Based Medical Devices
2023. 45th Annual International Conference of the IEEE Engineering in Medicine and Biology Society (EMBC), Sydney Australia, July 24-27, 2023. DOI : 10.1109/EMBC40787.2023.10340131.Metamodel for Safety Risk Management of Medical Devices Based on ISO 14971
2023. The ACM/IEEE 26th International Conference on Model-Driven Engineering Languages and Systems, Västerås, Sweden, October 1-6, 2023.Giant switchable non thermally-activated conduction in 180 degrees domain walls in tetragonal Pb(Zr,Ti)O-3
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Apl Materials. 2022. DOI : 10.1063/5.0101411.Highly Sensitive Detection of the Antidepressant Fluoxetine With an Extended Gate Field Effect Transistor
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2022. 47th International Conference on Infrared, Millimeter and Terahertz Waves (IRMMW-THz), Delft, NETHERLANDS, Aug 28-Sep 02, 2022. DOI : 10.1109/IRMMW.THz50927.2022.9895513.Spike-Based Sensing and Communication for Highly Energy-Efficient Sensor Edge Nodes
2022. 2nd IEEE International Symposium on Joint Communications and Sensing (JC and S), Seefeld, AUSTRIA, Mar 09-10, 2022. DOI : 10.1109/JCS54387.2022.9743501.Gate energy efficiency and negative capacitance in ferroelectric 2D/2D TFET from cryogenic to high temperatures
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2020. IEEE International Electron Devices Meeting (IEDM), ELECTR NETWORK, Dec 12-18, 2020. DOI : 10.1109/IEDM13553.2020.9372063.At the end of scaling: 2D materials for computing and sensing applications
Lausanne, EPFL, 2020. DOI : 10.5075/epfl-thesis-7695.High-Performance III-V MOSFETs and Tunnel-FETs Integrated on Silicon
Lausanne, EPFL, 2020. DOI : 10.5075/epfl-thesis-8346.Sweat monitoring with CMOS compatible technology: ISFETS and beyond
Lausanne, EPFL, 2020. DOI : 10.5075/epfl-thesis-7464.Extended Gate Field Effect Transistor Based Sensor for Detection of Trace Amounts of Anti-Depressant Drug
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Scientific Reports. 2019. DOI : 10.1038/s41598-019-54600-5.Detection of ultra-low protein concentrations with the simplest possible field effect transistor
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IEEE Journal of the Electron Devices Society. 2019. DOI : 10.1109/JEDS.2019.2933745.Sweat Biomarker Sensor Incorporating Picowatt, Three-Dimensional Extended Metal Gate Ion Sensitive Field Effect Transistors
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Lausanne, EPFL, 2019. DOI : 10.5075/epfl-thesis-9696.Apparatus for non-invasive sensing of biomarkers in human sweat
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2019. Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon (EUROSOI-ULIS), Grenoble, FRANCE, Apr 01-03, 2019. DOI : 10.1109/EUROSOI-ULIS45800.2019.9041875.Capillary flow device for bio-fluid collection with semiconductor sensors
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2013. 43rd Solid-State Device Research Conference (ESSDERC), Bucharest, Romania, September 16-20, 2013. DOI : 10.1109/ESSDERC.2013.6818875.Gate-all-around buckled dual Si nanowire nMOSFETs on bulk Si for transport enhancement and digital logic
Microelectronic Engineering. 2013. DOI : 10.1016/j.mee.2013.02.003.Towards Nanomechanics and Nanoelectronics on a Single Chip
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Lausanne, EPFL, 2013. DOI : 10.5075/epfl-thesis-5691.Encapsulated Low Frequency Vibrating Body Field Effect Resonator
Lausanne, EPFL, 2013. DOI : 10.5075/epfl-thesis-5634.Large-scale, in-situ integration of horizontal carbon nanotube arrays into gas sensing devices
Micronarc Alpine Meeting, 4th edition, Villars-sur-Ollon, Switzerland, January 13-15, 2013.A study on 1T Capacitor-less Tunnel FET DRAM Exploiting Ungated Body
2013. ISDRS 2013, Washington DC, USA, December 11-13, 2013.Nanoelectromechanical microwave switch based on graphene
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2013. 39th International Conference on Micro and Nano Engineering, London, UK, September 16-19, 2013.Ultra low power NEMFET based logic
2013. 2013 IEEE International Symposium on Circuits and Systems (ISCAS), Beijing, China, 19-23 05 2013. p. 566 - 569. DOI : 10.1109/ISCAS.2013.6571905.An innovative band-to-band tunneling analytical model and implications in compact modeling of tunneling-based devices
Applied Physics Letters. 2013. DOI : 10.1063/1.4821100.Carbon Nanotube Precise Assembly for CMOS and NEMS Applications
Lausanne, EPFL, 2013. DOI : 10.5075/epfl-thesis-5651.High-k dielectric FinFETs towards Sensing Integrated Circuits
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2013. Annual meeting of the GDR-I GNT: Graphene and Nanotubes Science and Applications, Ecully, France, January 23-27, 2012.FinFET integrated low-power circuits for enhanced sensing applications
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Lausanne, EPFL, 2012. DOI : 10.5075/epfl-thesis-5504.Vertically stacked Si nanostructures for biosensing applications
Microelectronic Engineering. 2012. DOI : 10.1016/j.mee.2012.03.017.Self-Assembled Nano-Electro-Mechanical Tri-state Carbon Nanotube Switches for Reconfigurable Integrated Circuits
2012. IEEE MEMS 2012, Paris, Jan. 29-Feb. 2, 2012. p. 188 - 191. DOI : 10.1109/MEMSYS.2012.6170148.Determination of minimum conductivity of graphene from contactless microwaves measurements
2012. IEEE NANO 2012 - 12th International Conference on Nanotechnology, Birmingham, UK, August, 20-23, 2012. DOI : 10.1109/NANO.2012.6322060.New Tunnel-FET Architecture with Enhanced Ion and Improved Miller Effect for Energy Efficient Switching
2012. 70th Device Research Conference, State College, PA, USA, June 18-20, 2012. p. 131 - 132. DOI : 10.1109/DRC.2012.6256999.From All-Si Nanowire TFETs Towards III-V TFETs
Lausanne, EPFL, 2012. DOI : 10.5075/epfl-thesis-5534.Experimental confirmation of temperature dependent negative capacitance in ferroelectric field effect transistor
Applied Physics Letters. 2012. DOI : 10.1063/1.4704179.A Novel Extraction Method and Compact Model for the Steepness Estimation of FDSOI TFET Lateral Junction
IEEE Electron Device Letters. 2012. DOI : 10.1109/LED.2011.2174027.Nanoelectronics: Ferroelectric devices show potential
Nature Nanotechnology. 2012. DOI : 10.1038/nnano.2012.10.Multigate Buckled Self-Aligned Dual Si Nanowire MOSFETs on Bulk Si for High Electron Mobility
IEEE Transactions on Nanotechnology. 2012. DOI : 10.1109/TNANO.2012.2205401.Non-contact characterization of graphene surface impedance at micro and millimeter waves
Journal of Applied Physics. 2012. DOI : 10.1063/1.4728183.Local volume depletion/accumulation in GAA Si nanowire junctionless nMOSFETs
IEEE Transactions on Electron Devices. 2012. DOI : 10.1109/TED.2012.2220363.RF MEMS Shunt Capacitive Switches Using AlN Compared to Si3N4 Dielectric
Journal of Microelectromechanical Systems. 2012. DOI : 10.1109/JMEMS.2012.2203101.TCAD Simulation of SOI TFETs and Calibration of Non-local Band-to-Band Tunneling Model
Microelectronic Engineering. 2012. DOI : 10.1016/j.mee.2012.07.077.Single Active Nanoelectromechanical Tuning Fork Front-End Radio-Frequency Receiver
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Applied Physics Letters. 2012. DOI : 10.1063/1.4758991.Multi-gate Si nanowire MOSFETs : fabrication, strain engineering and transport analysis
Lausanne, EPFL, 2012. DOI : 10.5075/epfl-thesis-5507.Study on dual-lateral-gate suspended-body single-walled carbon nanotube field-effect transistors
Solid-State Electronics. 2012. DOI : 10.1016/j.sse.2012.04.022.Negative Capacitance Transistor
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Journal ElectroSuisse. 2012.In-situ grown horizontal carbon nanotube membrane
Microelectronic Engineering. 2012. DOI : 10.1016/j.mee.2012.05.017.Self-Aligned Lateral Dual-Gate Suspended-Body Single-Walled Carbon Nanotube Field-Effect Transistors
Applied Physics Letters. 2012. DOI : 10.1063/1.3682085.High-Q 3D Embedded Inductors using TSV for RF MEMS Tunable Bandpass Filters (4.65-6.8 GHz)
2012. 42nd European Microwave Conference, Amsterdam, Netherlands. p. 822 - 825.The electron–hole bilayer tunnel FET
Solid-State Electronics. 2012. DOI : 10.1016/j.sse.2012.04.016.Understanding the Superlinear Onset of Tunnel-FET Output Characteristic
IEEE Electron Device Letters. 2012. DOI : 10.1109/LED.2012.2212175.Accumulation-mode gate-all-around Si nanowire nMOSFETs with sub-5 nm cross-section and high uniaxial tensile strain
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IEEE Electron Device Letters. 2012. DOI : 10.1109/LED.2011.2175898.Precise Alignment of Individual Carbon Nanotubes for Nanoelectronics
2012. 12th IEEE International Conference on Nanotechnology (IEEE-NANO). DOI : 10.1109/NANO.2012.6322187.Resonant-Body Silicon Nanowire Field Effect Transistor without Junctions
2012. 2012 IEEE International Electron Devices Meeting IEDM, San Francisco, USA, December 10-13, 2012. p. 15.2.1 - 15.2.4. DOI : 10.1109/IEDM.2012.6479046.In-situ grown horizontal carbon nanotube membranes for sensitive & selective gas sensing
LEA micro-engineering workshop, 11th edition, Arc-et-Senans, France, September 6-7, 2012.On the Static and Dynamic Behavior of the Germanium Electron-Hole Bilayer Tunnel FET
IEEE Transactions on Electron Devices. 2012. DOI : 10.1109/Ted.2012.2211600.Tunnel FET with non-uniform gate capacitance for improved device and circuit level performance
2012. ESSDERC 2012 - 42nd European Solid State Device Research Conference, Bordeaux, France, 17-21 09 2012. p. 161 - 164. DOI : 10.1109/ESSDERC.2012.6343358.Large-Scale Assembly of Tunable Resonant-Body Carbon Nanotube Transistors without Hysteresis
2012. IEEE International Electron Devices Meeting IEDM, San Francisco, USA, Dec 10-13, 2012. p. 15.3.1 - 15.3.4. DOI : 10.1109/IEDM.2012.6479047.Gate-All-Around Buckled Dual Si Nanowire nMOSFETs on Bulk Si for Transport Enhancement and Digital Logic Application
2012. 38th International Conference on Micro and Nano Engineering (MNE), Toulouse, France, September 16-20, 2012.Organic half-wave rectifier fabricated by stencil lithography on flexible substrate
Microelectronic Engineering. 2012. DOI : 10.1016/j.mee.2012.07.110.Streched organic transistors maintain mobility on flexible substrates
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ACS Nano. 2012. DOI : 10.1021/nn203517w.Corner Effect and Local Volume Inversion in SiNW FETs
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Solid-State Electronics. 2011. DOI : 10.1016/j.sse.2011.10.012.Organic Thin-Film Transistors and Circuits Fabricated by Stencil Lithography on Full-Wafer Flexible Substrates
Lausanne, EPFL, 2011. DOI : 10.5075/epfl-thesis-5102.Lateral Gate Suspended-Body Carbon Nanotube Field-Effect-Transistors with Sub-100nm Air Gap by Precise Positioning Method
2011. Device Research Conference (DRC 2011), Santa Barbara, USA, June 20-22, 2011.Carbon Nanotube Crossed Junction by Two Step Dielectrophoresis
Journal Of Nanoscience And Nanotechnology. 2011. DOI : 10.1166/jnn.2011.4116.In-IC Strategies for 3D Devices in Bulk Silicon
Lausanne, EPFL, 2011. DOI : 10.5075/epfl-thesis-4864.Self-Aligned Double-Gate Suspended-Body Carbon Nanotube Field-Effect transistors For RF Applications
2011. Transducers’11, Beijing, China, June 5-9, 2011. p. 2730 - 2733. DOI : 10.1109/TRANSDUCERS.2011.5969810.Accumulation-Mode GAA Si NW nFET with sub-5 nm cross-section and high uniaxial tensile strain
2011. The 41st European Solid-State Device Research Conference (IEEE ESSDERC), Helsinki, Finland, 12-16 Sep. 2011. p. 311 - 314. DOI : 10.1109/ESSDERC.2011.6044172.Integration for All Configurations
IEEE Microwave Magazine. 2011. DOI : 10.1109/MMM.2011.942700.Scalable conformal array for multi-gigabit body centric wireless communication
2011. 5th International Symposium on Medical Information & Communication Technology (ISMICT), 2011, Montreux, Switzerland, March 27-30, 2011. p. 74 - 78. DOI : 10.1109/ISMICT.2011.5759800.Self-Aligned Double-Gate Suspended-Body Single-Walled Carbon Nanotube Field-Effect-Transistors
2011. ESSDERC 11, Helsinki, Finland, Sept. 12-16, 2011. p. 315 - 318. DOI : 10.1109/ESSDERC.2011.6044171.A Microfabricated 1-D Metamaterial Unit Cell Matched From DC to Millimeter-Waves
IEEE Microwave and Wireless Components Letters. 2011. DOI : 10.1109/LMWC.2011.2162617.Ultra low power: Emerging devices and their benefits for integrated circuits
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Microelectronic Engineering. 2011. DOI : 10.1016/j.mee.2011.01.026.Electron-hole bilayer tunnel FET for steep subthreshold swing and improved ON current
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Nature. 2011. DOI : 10.1038/nature10679.Local stressors to accommodate 1.2 to 5.6 GPa uniaxial tensile stress in suspended gate-all-around Si nanowire nMOSFETs by elastic local buckling
2011. International Semiconductor Device Research Symposium (IEEE ISDRS, biennial), University of Maryland, College Park, MD, USA, December 7-9, 2011. p. 1 - 2. DOI : 10.1109/ISDRS.2011.6135148.RF-MEMS switches with AlN dielectric and their applications
International Journal of Microwave and Wireless Technologies. 2011. DOI : 10.1017/S175907871100064X.Self-Aligned Back-Gated Suspended Body Single-Walled Carbon Nanotube Field-Effect-Transistors Fabricated by High-Precision Positioning Method
2011. VLSI-TSA 2011, Hsinchu, Taiwan, April 25-27, 2011.An Improved Precise Positioning Method for Self-Assembly of Lateral-Gate Carbon Nanotube Field-Effect-Transistors
2011. MNE 11, Berlin, Germany, Sept. 19-23, 2011.Guardian Angels for a Smarter Life: Enabling a Zero-Power Technological Platform for Autonomous Smart Systems
2011. 2nd European Future Technologies Conference and Exhibition (FET), Budapest, HUNGARY, May 04-06, 2011. p. 43 - 46. DOI : 10.1016/j.procs.2011.12.016.Resist-assisted assembly of single-walled carbon nanotube devices with nanoscale precision
Carbon. 2011. DOI : 10.1016/j.carbon.2011.12.006.The Vibrating Body Transistor
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Microelectronic Engineering. 2011. DOI : 10.1016/j.mee.2010.12.064.Tunnel-FET architecture with improved performance due to enhanced gate modulation of the tunneling barrier
2011. 2011 69th Annual Device Research Conference (DRC), Santa Barbara, CA, USA, June 20-22, 2011. p. 111 - 112. DOI : 10.1109/DRC.2011.5994440.Uniaxially tensile strained accumulation-mode gate-all-around Si nanowire nMOSFETs
2011. 69th annual IEEE Device Research Conference (IEEE DRC), Santa Barbara, California, USA, 20-22 June 2011. p. 145 - 146. DOI : 10.1109/DRC.2011.5994458.Horizontally and on-site grown carbon nanotube membrane for sensitive and selective gas sensing
2011. 37th International Conference on Micro & Nano Engineering, Berlin, Germany, September 19-23, 2011.Modeling the Temperature Dependence of Fe-FET Static Characteristics Based on Landau's Theory
Ieee Transactions On Electron Devices. 2011. DOI : 10.1109/TED.2011.2160868.Tunneling path impact on semi-classical numerical simulations of TFET devices
2011. 2011 12th International Conference on Ultimate Integration on Silicon (ULIS), Cork, Ireland, 14-16 03 2011. p. 1 - 4. DOI : 10.1109/ULIS.2011.5758002.Miniature Sensor Node with Conformal Phased Array
Radioengineering. 2011.A tunneling field-effect transistor exploiting internally combined band-to-band and barrier tunneling mechanisms
Applied Physics Letters. 2011. DOI : 10.1063/1.3569760.SWNT array resonant gate MOS transistor
Nanotechnology. 2011. DOI : 10.1088/0957-4484/22/5/055204.Self-Assembly of Doubly-Clamped/Cantilevered Carbon Nanotube Arrays by a Precise Positioning Method
2011. International Conference on the Science and Application of Nanotubes (NT'11), Cambridge, UK, July 11-16, 2011.Integration of Engineered Source and Drain Extensions in Double Gate Mosfet with Sub-32nm Channel Length
Lausanne, EPFL, 2011. DOI : 10.5075/epfl-thesis-4824.Ferroelectric Field Effect Transistor for Memory and Switch Applications
Lausanne, EPFL, 2011. DOI : 10.5075/epfl-thesis-4990.High aspect ratio sub-micron trenches on silicon-on-insulator and bulk silicon
Microelectronic Engineering. 2011. DOI : 10.1016/j.mee.2011.02.030.A quasi-analytical model for nanowire FETs with arbitrary polygonal cross section
Solid-State Electronics. 2010. DOI : 10.1016/j.sse.2010.04.039.Dipole antenna and distributed MEMS phase shifter fully integrated in a single wafer process for beam steering applications
Microelectronic Engineering. 2010. DOI : 10.1016/j.mee.2009.10.009.Ferroelectric transistors with improved characteristics at high temperature
Applied Physics Letters. 2010. DOI : 10.1063/1.3467471.Carbon nanotube vertical membranes for electrostatically actuated micro-electro-mechanical devices
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Nature Nanotechnology. 2010. DOI : 10.1038/nnano.2010.38.Nano-Electro-Mechanical vibrating body FET resonator for high frequency integrated oscillators
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2010. 40th European Solid-State Device Research Conference (ESSDERC)/36th European Solid-State Circuits Conference (ESSCIRC), Seville, SPAIN, Sep 14-16, 2010. p. 234 - 239. DOI : 10.1016/j.sse.2011.06.035.Demonstrations of Wireless Autonomous Sensors for Aeronautical Applications
2010. Smart System Integration (SSI), Como (Italy), March 23-24, 2010.Asymmetrically strained all-silicon multi-gate n-Tunnel FETs
Solid State Electronics. 2010. DOI : 10.1016/j.sse.2010.04.037.Wafer Level Assembly of Single-Walled Carbon Nanotube Arrays with Precise Positioning
2010. Nanotech 2010, Anaheim, CA, USA.Test structure and method for the experimental investigation of internal voltage amplification and surface potential of ferroelectric MOSFETs
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Lausanne, EPFL, 2010. DOI : 10.5075/epfl-thesis-4729.Resonant-Body Fin-FETs with sub-nW power consumption
2010. International Electron Devices Meeting (IEDM), San Francisco, CA, Dec 06-08, 2010. p. 7.6.1 - 7.6.4. DOI : 10.1109/IEDM.2010.5703318.Metal-Ferroelectric-Metal-Oxide-Semiconductor Field Effect Transistor with Sub-60mV/decade Subthreshold Swing and Internal Voltage Amplification
2010. International Electron Devices Meeting (IEDM), San Francisco, CA, Dec 06-08, 2010. p. 16.3.1 - 16.3.4. DOI : 10.1109/IEDM.2010.5703374.Floating-Potential Self-Assembly of Singe-Walled Carbon Nanotube Transistors by Ac-Dielectrophoresis
2010. MNE 2010, Genoa, Italy, September 19-22, 2011.Carbon Nanotube Electromechanical Devices for Radio Frequency Applications
Lausanne, EPFL, 2010. DOI : 10.5075/epfl-thesis-4800.Tunable MEMS capacitors using vertical carbon nanotube arrays grown on metal lines
Nanotechnology. 2010. DOI : 10.1088/0957-4484/22/2/025203.Active Microelectromechanical Resonator : The Vibrating Body Field Effect Transistor
Lausanne, EPFL, 2010. DOI : 10.5075/epfl-thesis-4673.The Hysteretic Ferroelectric Tunnel FET
IEEE Transactions on Electron Devices. 2010. DOI : 10.1109/TED.2010.2079531.Abrupt switch based on internally combined Band-To-Band and Barrier Tunneling mechanisms
2010. ESSDERC 2010 - 40th European Solid State Device Research Conference, Sevilla, Spain, September 14-16, 2010. p. 353 - 356. DOI : 10.1109/ESSDERC.2010.5618215.An experimental investigation of the surface potential in ferroelectric P(VDF-TrFE) FETs
2010. 35th International Conference on Micro-and Nano-Engineering, Ghent, BELGIUM, Sep 28-Oct 01, 2009. p. 1607 - 1609. DOI : 10.1016/j.mee.2009.10.047.RF NEM capacitive switch based on dense horizontal arrays of CNTs
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Solid-State Electronics. 2010. DOI : 10.1016/j.sse.2010.04.030.Silicon nanowires with lateral uniaxial tensile stress profiles for high electron mobility gate-all-around MOSFETs
Microelectronic Engineering. 2010. DOI : 10.1016/j.mee.2009.11.024.Capacitive nanoelectromechanical switch based on suspended carbon nanotube array
Applied Physics Letters. 2010. DOI : 10.1063/1.3525165.RF MEMS Switches for Wide-band (5 - 40 GHz), Tuneable Filters and DMTL Phase Shifters
Lausanne, EPFL, 2010. DOI : 10.5075/epfl-thesis-4737.The high-mobility bended n-channel silicon nanowire transistor
IEEE Transactions on Electron Devices. 2010. DOI : 10.1109/TED.2010.2040939.Non-hysteretic ferroelectric tunnel FET with improved conductance at Curie temperature
2010. 2010 68th Annual Device Research Conference (DRC), Notre Dame, IN, USA, June 21-23, 2010. p. 67 - 68. DOI : 10.1109/DRC.2010.5551937.Tunable Electromechanical Resonator Based On Carbon Nanotube Array Suspended Gate Field Effect Transistor (Cnt-Sgfet)
2010. 23rd IEEE International Conference on Micro Electro Mechanical Systems (MEMS 2010), Hong Kong, PEOPLES R CHINA, Jan 24-28, 2010. p. 112 - 115. DOI : 10.1109/MEMSYS.2010.5442552.Heterogeneous Integration for Novel Functionality
2010. 3D System Integration Conference (3DIC), Munic, Germany, November 16-18, 2010. p. 1 - 19. DOI : 10.1109/3DIC.2010.5751423.Electrical modeling and design of a wafer-level package for MEM resonators
IEEE Transactions on Advanced Packaging. 2010. DOI : 10.1109/TADVP.2010.2043101.Nano-Electro-Mechanical Switches Based on Carbon Nanotubes Arrays
Lausanne, EPFL, 2010. DOI : 10.5075/epfl-thesis-4774.Vibrating Body Transistors: Enabling Fin-FET Nano-Electro-Mechanical Resonators
2010. 2010 IEEE International Frequency Control Symposium, New Port Beach, CA, Jun 01-04, 2010. p. 333 - 333. DOI : 10.1109/FREQ.2010.5556318.Three-level Stencil Alignment Fabrication of a High-k Gate Stack Organic Thin Film Transistor
36th International Conference on Micro & Nano Engineering (MNE), Genoa, Italy, September 19-22, 2010.Organic Thin Film Transistors on Flexible Polyimide Substrates Fabricated by Full Wafer Stencil Lithography
Sensors and Actuators A. 2010. DOI : 10.1016/j.sna.2010.04.016.Double-gate pentacene thin-film transistor with improved control in sub-threshold region
Solid-State Electronics. 2010. DOI : 10.1016/j.sse.2010.04.019.The Curie temperature as a key design parameter of ferroelectric Field Effect Transistors
2010. ESSDERC 2010 - 40th European Solid State Device Research Conference, Sevilla, Spain, September 14-16, 2010. p. 218 - 221. DOI : 10.1109/ESSDERC.2010.5618386.3D stacked arrays of fins and nanowires on bulk silicon
Microelectronic Engineering. 2010. DOI : 10.1016/j.mee.2009.12.036.9 MHz vibrating body FET tuning fork oscillator
2009. Joint Meeting of the 23rd European Frequency and Time Forum/IEEE International Frequency Control Symposium, Besancon, FRANCE, Apr 20-24, 2009. p. 520 - 523. DOI : 10.1109/FREQ.2009.5168235.A study of polarization effects in metal-ferroelectric-oxide-semiconductor capacitors
2009. 32nd International Semiconductor Conference, Sinaia, ROMANIA, Oct 12-14, 2009. p. 517 - 520. DOI : 10.1109/SMICND.2009.5336660.Reliability of rf mems capacitive switches and distributed mems phase shifters using aln dielectric
2009. 22nd IEEE International Conference on Micro Electro Mechanical Systems (MEMS), Sorrentto, Italy, January 25-29, 2009.. p. 638 - 641. DOI : 10.1109/MEMSYS.2009.4805463.Lateral Strain Profile as Key Technology Booster for All-Silicon Tunnel FETs
Ieee Electron Device Letters. 2009. DOI : 10.1109/LED.2009.2018127.Microelectromechanical Metal-Air-Insulator-Semiconductor (MEM-MAIS) Diode: A Novel Hybrid Device for ESD Protection
2009. 2009 IEEE 22nd International Conference on Micro Electro Mechanical Systems (MEMS), Sorrento, Italy, 25-29 01 2009. p. 132 - 135. DOI : 10.1109/MEMSYS.2009.4805336.Tunable band-stop filter based on single RF MEMS capacitive shunt switch with meander arm inductance
2009. 39th European Solid-State Device Research Conference (ESSDERC), Athens, Greece, September 15-19, 2009. p. 331 - 334. DOI : 10.1109/ESSDERC.2009.5331304.Centre frequency and bandwidth tunable bandpass filter based on RF MEMS (10-14GHz)
2009. 37th European Microwave Conference, Rome, ITALY, Sep 29-Oct 01, 2009. DOI : 10.23919/EUMC.2009.5296302.Sub-100μW low power operation of vibrating body FETs
2009. International Symposium on VLSI Technology, Systems and Applications, Hsinchu, TAIWAN, Apr 27-29, 2009. p. 129 - 130. DOI : 10.1109/VTSA.2009.5159324.Investigation of bias-dependent series resistances and barrier height in Double Gate Schottky MOSFETs
2009. IEEE International SOI Conference 2009, Foster City, CA, Oct 05-08, 2009. p. 131 - 132. DOI : 10.1109/SOI.2009.5318738.X-band MEMS technology for integrated Radar modules
2009. p. 254 - 257.Retention in nonvolatile silicon transistors with an organic ferroelectric gate
Applied Physics Letters. 2009. DOI : 10.1063/1.3158959.Nanogap MEM resonators on SOI
Lausanne, EPFL, 2009. DOI : 10.5075/epfl-thesis-4484.Asymmetrically strained all-silicon Tunnel FETs featuring 1V operation
2009. p. 452 - 455. DOI : 10.1109/ESSDERC.2009.5331615.MEMS technology for Radar front end modules.
2009. International Radar Conference - Surveillance for a Safer World, 2009. RADAR, October 12-16, 2009.Highly Tunable Band-Stop Filters Based on AIN RF MEM Capacitive Switches with Inductive Arms and Zipping Capacitive Coupling
2009. IEEE International Electron Devices Meeting (IEDM 2009), Baltimore, MD, Dec 07-09, 2009. p. 753 - 756. DOI : 10.1109/IEDM.2009.5424217.Small signal modeling of charge and piezoresistive modulations in active MEM resonators
2009. p. 379 - 382. DOI : 10.1109/ESSDERC.2009.5331508.Bulk Lateral MEM Resonator on Thin SOI With High Q-Factor
Journal of Microelectromechanical Systems. 2009. DOI : 10.1109/JMEMS.2008.2011689.Silicon nanowires with lateral uniaxial tensile stress profiles for high electron mobility gate-all-around MOSFETs
2009. MNE 2009, Ghent, Belgium, 28 Sep.-1 Oct. 2009.A Study of Deterministic Positioning of Carbon Nanotubes by Dielectrophoresis
Journal of Electronic Materials. 2009. DOI : 10.1007/s11664-009-0797-0.Carbon Nanotubes Brush Varactor
2009. 10th International Symposium of RF MEMS and RF Microsystems (MEMSWAVE), Trento, Italy, July 6-8, 2009.High-quality factor MEMS based oscillator: Silicon 9 MHz oscillator with low phase noise and high quality factor
2009. 16th International Conference Mixed Design of Integrated Circuits and Systems, Lodz, POLAND, Jun 25-27, 2009. p. 276 - 281.Micro-electro-mechanical capacitors based on vertical carbon nanotube arrays
2009. p. 335 - 338. DOI : 10.1109/ESSDERC.2009.5331309.Investigation of oxidation-induced strain in a top-down Si nanowire platform
Microelectronic Engineering. 2009. DOI : 10.1016/j.mee.2009.03.086.Optimization of the channel lateral strain profile for improved performance of multi-gate MOSFETs
2009. International Symposium on VLSI Technology, Systems and Applications, Hsinchu, TAIWAN, Apr 27-29, 2009. p. 119 - 120. DOI : 10.1109/VTSA.2009.5159319.Self-sustained Low Power Oscillator Based on Vibrating Body Field Effect Transistor
2009. IEEE International Electron Devices Meeting (IEDM 2009), Baltimore, MD, Dec 07-09, 2009. p. 741 - 744. DOI : 10.1109/IEDM.2009.5424222.Investigation of oxidation-induced strain in a top-down Si nanowire platform
2009. INFOS 2009 (biennial), Cambridge, the UK, 28 June-1 July 2009.Double-Gate Pentacene TFTs with Improved Control in Subthreshold Region
2009. 39th European Solid-State Device Research Conference (ESSDERC), Athens, Greece, September 14-18, 2009. p. 205 - 208. DOI : 10.1109/ESSDERC.2009.5331352.Ad-Hoc Wireless Sensor Networks For Exploration Of Solar-System Bodies
Acta Astronautica. 2009. DOI : 10.1016/j.actaastro.2008.11.012.An experimental study of temperature influence on electrical characteristics of ferroelectric P(VDF-TrFE) FETs on SOI
2009. 2009 Proceedings of the European Solid State Device Research Conference (ESSDERC), Athens, Greece, 14-18 09 2009. p. 97 - 100. DOI : 10.1109/ESSDERC.2009.5331330.Micro-Electro-Mechanical Switch Based on Suspended Horizontal Dense Mat of CNTs by FIB Nanomanipulation
2009. 23rd Eurosensors Conference, Lausanne, SWITZERLAND, Sep 06-09, 2009. p. 1411 - 1414. DOI : 10.1016/j.proche.2009.07.352.Ultra-Sensitive Capacitive Detection Based on SGMOSFET Compatible With Front-End CMOS Process
IEEE Journal of Solid-State Circuits. 2009. DOI : 10.1109/JSSC.2008.2007448.0-level Vacuum Packaging RT Process for MEMS Resonators
2008.Fabrication of MEMS Resonators in Thin SOI
2008.Abrupt NMOS Inverter Based on Punch-Through Impact Ionization With Hysteresis in the Voltage Transfer Characteristics
IEEE Electron Device Letters. 2008. DOI : 10.1109/LED.2008.2001632.Low voltage Ferroelectric FET with sub-100nm copolymer P(VDF-TrFE) gate dielectric for non-volatile 1T memory
2008. p. 162 - 165. DOI : 10.1109/ESSDERC.2008.4681724.Micro-Electro-Mechanical Metal-Air-Insulator-Semiconductor Diode Switch
2008. 34th International Conference on Micro- and Nano-Engineering, Athens, GREECE, Sep 15-18, 2008. p. 1074 - 1077. DOI : 10.1016/j.mee.2009.02.007.Thermally Stable Distributed MEMS Phase Shifter for Airborne and Space Applications
2008. 38th European Microwave Conference, Amsterdam, The Netherlands, November 28-31, 2008. p. 100 - 103. DOI : 10.1109/EUMC.2008.4751397.Focussed ion beam based fabrication of micro-electro-mechanical resonators
Microsystem Technologies. 2008. DOI : 10.1007/s00542-007-0464-4.Study of n- and p-type dopants activation and dopants behavior with respect to annealing conditions in silicon germanium-on-insulator (SGOI)
Materials Science and Engineering: B. 2008. DOI : 10.1016/j.mseb.2008.10.023.DRAM Based on Hysteresis in Impact Ionization Single-Transistor-Latch
2008.SWCNT/MWCNT Crossed Junction by Two-Step Dielectrophoresis
2008.High-Isolation Shunt-Series MEMS Switch for a Wide Frequency Range (6-40GHz)
2008. 9th International Symposium of RF MEMS and RF Microsystem (MEMSWAVE), Heraklion (Greece), July 1-3, 2008.Analytical Modeling of the Suspended-Gate FET and Design Insights for Low-Power Logic
IEEE Transactions on Electron Devices. 2008. DOI : 10.1109/TED.2007.911070.Non-hysteretic punchthrough impact ionization MOS (PIMOS) transistor: Application to abrupt inverter and NDR circuits
2008. p. 310 - 313. DOI : 10.1109/ESSDERC.2008.4681760.New functionality and ultra low power: key opportunities for post-CMOS era
2008. International Symposium on VLSI Technology, Systems and Applications, Hsinchu, TAIWAN, Apr 21-23, 2008. p. 72 - 73. DOI : 10.1109/VTSA.2008.4530804.3D Nanostructured Silicon Relying on Hard Mask Engineering for High Temperature Annealing (HME-HTA) Processes for Electronic Devices
2008.RF MEMS capacitive switch on semi-suspended CPW using low-loss high-resistivity silicon substrate
Microelectronic Engineering. 2008. DOI : 10.1016/j.mee.2008.01.093.In-Plane Silicon-On-Nothing Nanometer-Scale Resonant Suspended Gate MOSFET for In-IC Integration Perspectives
IEEE Electron Device Letters. 2008. DOI : 10.1109/LED.2008.919781.Investigation of Strain Profile Optimization in Gate-All-Around Suspended Silicon Nanowire FET
2008. IEEE ESSDERC 2008, Edinburgh, Scotland, Sep. 15-19, 2008.NANOSIL network of excellence--silicon-based nanostructures and nanodevices for long-term nanoelectronics applications
Materials Science in Semiconductor Processing. 2008. DOI : 10.1016/j.mssp.2008.09.017.Finite element analysis and analytical simulations of Suspended Gate-FET for ultra-low power inverters
Solid-State Electronics. 2008. DOI : 10.1016/j.sse.2008.04.013.Nano-gap micro-electro-mechanical bulk lateral resonators with high quality factors and low motional resistances on thin silicon-on-insulator
Solid-State Electronics. 2008. DOI : 10.1016/j.sse.2008.04.022.Multi-gate vibrating-body field effect transistor (VB-FETs)
2008. p. 1 - 4. DOI : 10.1109/IEDM.2008.4796781.Hysteretic inverter-on-a-body-tied-wire based on less-than-10mV/decade abrupt punch-through impact ionization MOS (PIMOS) switch
2008. p. 22 - 23. DOI : 10.1109/VTSA.2008.4530780.Oxide charging and memory effects in suspended-gate FET
2008. p. 685 - 688. DOI : 10.1109/MEMSYS.2008.4443749.Fabrication and Characterization of Gate-All-Around Silicon Nanowires on Bulk Silicon
IEEE Transactions on Nanotechnology. 2008. DOI : 10.1109/TNANO.2008.2007215.Nanoscale strain characterisation for ultimate CMOS and beyond
2008. International Symposium on Beyond Silicon Technology held at the 2008 EMRS Spring Meeting, Strasbourg, FRANCE, May 26-30, 2008. p. 271 - 278. DOI : 10.1016/j.mssp.2009.06.003.Impact of lateral non-uniform doping and hot carrier degradation on capacitance behavior of high voltage MOSFETs
2008. 37th European Solid-State Device Research Conference, Munich, GERMANY, Sep 11-13, 2007. p. 426 - 429. DOI : 10.1109/ESSDERC.2007.4430969.Impact of Lateral Nonuniform Doping and Hot Carrier Injection on Capacitance Behavior of High Voltage MOSFETs
Iete Technical Review. 2008. DOI : 10.4103/0256-4602.44655.Compact Modeling of Suspended Gate FET
2008. p. 119 - 124. DOI : 10.1109/VLSI.2008.11.Demonstration of subthrehold swing smaller than 60mV/decade in Fe-FET with P(VDF-TrFE)/SiO₂ gate stack
2008. p. 1 - 4. DOI : 10.1109/IEDM.2008.4796642.Nano-gap high quality factor thin film SOI MEM resonators
2008.Editorial
Microelectronics Journal. 2008. DOI : 10.1016/j.mejo.2007.05.002.Double gate movable body Micro-Electro-Mechanical FET as hysteretic switch: Application to data transmission systems
2008. p. 302 - 305. DOI : 10.1109/ESSDERC.2008.4681758.Silicon nanostructuring for 3D bulk silicon versatile devices
2008. 34th International Conference on Micro- and Nano-Engineering, Athens, GREECE, Sep 15-18, 2008. DOI : 10.1016/j.mee.2008.12.083.Laterally vibrating-body double gate MOSFET with improved signal detection
2008. p. 155 - 156. DOI : 10.1109/DRC.2008.4800781.Trapping Individual Carbon Nanotubes
2008.Punch-through impact ionization MOSFET (PIMOS): From device principle to applications
Solid-State Electronics. 2008. DOI : 10.1016/j.sse.2008.04.021.A new definition of threshold voltage in Tunnel FETs
Solid-State Electronics. 2008. DOI : 10.1016/j.sse.2008.04.003.Oscillator Based on Suspended Gate MOS Transistors
Romanian Journal Of Information Science And Technology. 2008.Three-dimensional electronic devices fabricated on a top-down silicon nanowire platform
Lausanne, EPFL, 2008. DOI : 10.5075/epfl-thesis-4068.1T Memory Cell Based on PVDF-TrFE Field Effect Transistor
2008. Material Research Society Spring meeting 2008, MRS 2008. p. 1067 - B03. DOI : 10.1557/PROC-1067-B03-02.Pentacene - SiO2 interface: Role of the environment prior to pentacene deposition and its impact on TFT DC characteristics
2008. 26th International Conference on Microelectronics (MIEL 2008), Nis, Serbia, May 11-14, 2008. DOI : 10.1109/ICMEL.2008.4559282.Prospects for logic-on-a-wire
Microelectronic Engineering. 2008. DOI : 10.1016/j.mee.2008.01.022.Variability-Aware Design of Multilevel Logic Decoders for Nanoscale Crossbar Memories
IEEE Transactions on Computer-Aided Design of Integrated Circuits and Systems. 2008. DOI : 10.1109/TCAD.2008.2006076.Capacités variables et inductances MEMS RF pour une intégration "Above-IC"
Lausanne, EPFL, 2007. DOI : 10.5075/epfl-thesis-3790.Above-IC RF MEMS devices for communication applications
Lausanne, EPFL, 2007. DOI : 10.5075/epfl-thesis-3778.Gate-all-around silicon nanowires for hybrid single electron transistor/CMOS applications
Lausanne, EPFL, 2007. DOI : 10.5075/epfl-thesis-3983.A New Charge based Compact Model for Lateral Asymmetric MOSFET and its application to High Voltage MOSFET Modeling
2007. 20th International Conference on VLSI Design held jointly with 6th International Conference on Embedded Systems (VLSID'07), Bangalore, India, 6-10 01 2007. p. 177 - 182. DOI : 10.1109/VLSID.2007.15.Compact Modeling of Lateral Nonuniform Doping in High-Voltage MOSFETs
IEEE Transactions on Electron Devices. 2007. DOI : 10.1109/TED.2007.896597.An EKV-based high voltage MOSFET model with improved mobility and drift model
Solid-State Electronics. 2007. DOI : 10.1016/j.sse.2007.09.024.Analytical Modeling of the Suspended-Gate FET and Design Insights for Digital Logic
2007. 2007 65th Annual Device Research Conference, South Bend, IN, USA, 18-20 06 2007. p. 103 - 104. DOI : 10.1109/DRC.2007.4373670.Fault-tolerant multi-level logic decoder for nanoscale crossbar memory arrays
2007. IEEE/ACM International Conference on Computer-Aided Design, San Jose, California, USA, November 4-8. p. 765 - 772. DOI : 10.1109/ICCAD.2007.4397358.Double-Gate Tunnel FET With High-k Gate Dielectric
IEEE Transactions on Electron Devices. 2007. DOI : 10.1109/TED.2007.899389.Cointegration of Gate-All-Around MOSFETs and Local Silicon-on-Insulator Optical Waveguides on Bulk Silicon
IEEE Transactions On Nanotechnology. 2007. DOI : 10.1109/TNANO.2006.886748.Fabrication of silicon-on-insulator MEM resonators with deep sub-micron transduction gaps
Microsystem Technologies. 2007. DOI : 10.1007/s00542-006-0349-y.Fabrication of Silicon-On-Insulator MEM Resonators with Deep Sub-Micron Transduction Gaps
2007. 2006 Symposium on Design, Test, Integration and Packaging of MEMS / MOEMS, DTIP 2006, Stresa, Italy, April 2006. p. 1489 - 1493. DOI : 10.1007/s00542-006-0349-y.Threshold voltage in Tunnel FETs: physical definition, extraction, scaling and impact on IC design
2007. 37th European Solid-State Device Research Conference, Munich, GERMANY, Sep 11-13, 2007. p. 299 - 302. DOI : 10.1109/ESSDERC.2007.4430937.Abrupt current switching due to impact ionization effects in Omega-MOSFET on low doped bulk silicon
2007. 37th European Solid-State Device Research Conference, Munich, GERMANY, Sep 11-13, 2007. p. 287 - 290. DOI : 10.1109/ESSDERC.2007.4430934.Bended gate-all-around nanowire MOSFET: a device with enhanced carrier mobility due to oxidation-induced tensile stress
2007. IEEE International Electron Devices Meeting, Washington, DC, Dec 10-12, 2007. p. 191 - 194. DOI : 10.1109/IEDM.2007.4418899.Ultra-thin nanograin polysilicon devices for hybrid CMOS-NANO integrated circuits
Lausanne, EPFL, 2007. DOI : 10.5075/epfl-thesis-3722.Numerical and analytical simulations of Suspended Gate - FET for ultra-low power inverters
2007. 37th European Solid-State Device Research Conference, Munich, GERMANY, Sep 11-13, 2007. p. 167 - 170. DOI : 10.1109/ESSDERC.2007.4430905.Charge carriers photogeneration in pentacene field effect transistors
Romanian Journal Of Information Science And Technology. 2007.Fragmented Membrane MEM Bulk Lateral Resonators with nano-gaps on 1.5 mu m SOI
2007. 37th European Solid-State Device Research Conference, Munich, GERMANY, Sep 11-13, 2007. p. 430 - 433. DOI : 10.1109/ESSDERC.2007.4430970.Integration of MOSFET transistors in MEMS resonators for improved output detection
2007. 14th International Conference on Solid-State Sensors, Actuators and Microsystems, Lyon, FRANCE, Jun 10-14, 2007. p. 1709 - 1712. DOI : 10.1109/SENSOR.2007.4300481.MEMS Tunable Capacitor with Fragmented Electrodes and Rotational Electro-Thermal Drive
2007. 2006 Symposium on Design, Test, Integration and Packaging of MEMS / MOEMS, DTIP 2006, Stresa, Italy, April 2006. p. 1589 - 1594. DOI : 10.1007/s00542-006-0350-5.Length scaling of the Double Gate Tunnel FET with a high-K gate dielectric
Solid-State Electronics. 2007. DOI : 10.1016/j.sse.2007.09.014.Design and fabrication of suspended-gate MOSFETs for MEMS resonator, switch and memory applications
Lausanne, EPFL, 2007. DOI : 10.5075/epfl-thesis-3838.Small slope micro/nano-electronic switches
2007. International Semiconductor Conference, Sinaia, ROMANIA, Oct 15-17, 2007. p. 397 - 402. DOI : 10.1109/SMICND.2007.4519743.High quality factor copper inductors integrated in deep dry-etched quartz substrates
2007. Symposium on Design, Test, Integration and Packaging of MEMS/MOEMS, Stresa, ITALY, Apr 26-28, 2006. p. 1483 - 1487. DOI : 10.1007/s00542-006-0364-z.Copper / low-k technological platform for the fabrication of high quality factor above-IC passive devices
Lausanne, EPFL, 2007. DOI : 10.5075/epfl-thesis-3831.High Quality Factor Copper Inductors Integrated in Deep Dry Etched Quartz Substrates
2007. 2006 Symposium on Design, Test, Integration and Packaging of MEMS / MOEMS, DTIP 2006, Stresa, Italy, April 2006. p. 1483 - 1487. DOI : 10.1007/s00542-006-0364-z.Gate-all-around MOSFETs: true fabrication and characteristics
2006.Fast and Efficient Light Intensity Modulation in SOI with Gate-All-Around Transistor Phase Modulator
2006. 2005 Conference on Lasers and Electro-Optics (CLEO), Baltimore, USA, 2005. p. 110 - 112. DOI : 10.1109/CLEO.2005.201693.New Method for Threshold Voltage Extraction of High Voltage MOSFETs based on Gate-to-Drain Capacitance Measurement
IEEE Electron Device Letters. 2006. DOI : 10.1109/LED.2006.877275.Conduction in ultra-thin SOI nanowires prototyped by FIB milling
Microelectronic Engineering. 2006. DOI : 10.1016/j.mee.2006.01.116.Double gate tunnel FET with ultrathin silicon body and high-k dielectric
2006. ESSDERC 2006. p. 383 - 386. DOI : 10.1109/ESSDER.2006.307718.Low temperature single electron characteristics in gate-all-around MOSFET
2006. p. 427 - 430. DOI : 10.1109/ESSDER.2006.307729.Experimental study of the process dependence of Mo, Cr, Ti, and W silicon Schottky diodes and contact resistance
IEEE Transactions on Electron Devices. 2006. DOI : 10.1109/TED.2006.870574.Hybrid Nanowire-MOS circuit architectures: from basic physics to digital and analog applications
2006.Analysis and Modeling of Lateral Non-Uniform Doping in High-Voltage MOSFETs
2006. DOI : 10.1109/IEDM.2006.347000.A new charge-based Compact Model for Lateral Asymmetric MOSFET
2006.Polyimide sacrificial layer for SOI SG-MOSFET pressure sensor
Microelectronic Engineering. 2006. DOI : 10.1016/j.mee.2005.12.021.Compact gate-all-around silicon light modulator for ultra high speed operation
Sensors and Actuators A: Physical. 2006. DOI : 10.1016/j.sna.2006.01.024.Electrical conduction in 10 nm thin polysilicon wires from 4 to 400 K and their operation for hybrid memory
Japanese Journal of Applied Physics. 2006. DOI : 10.1143/JJAP.45.5461.MEMS Tunable Capacitor with laterally driven fragmented electrodes and electro-thermal actuation
2006.MEMS Capacitive Pressure Sensor Based on Polysilicon Sealed Membrane
2006. 20th Eurosensors, Gothenburg, Sweden, September 17-20, 2006. p. 456 - 457.Nano-scale ICT devices and systems
2006.A New Charge based EKV Compact Model for Lateral Asymmetric MOSFET
2006.Co-integration of gate-all-around MOSFETs and local silicon-on insulator optical waveguides on bulk silicon for GHz on-chip optical signaling
2006. p. 31 - 32.A Compact DC and AC Model for Circuit Simulation of High Voltage VDMOS Transistor
2006. DOI : 10.1109/ISQED.2006.7.Capacitive pressure microsensor fabricated by bulk micromachining and sacricial layer etching
2006. 32nd Annual Conference of the IEEE Industrial Electronics Society, IECON 06, Paris, France, November 9-11, 2006. p. 2969 - 2974. DOI : 10.1109/IECON.2006.348052.Ultra-low voltage MEMS resonator based on RSG-MOSFET
2006. p. 882 - 885. DOI : 10.1109/MEMSYS.2006.1627941.Vertical co-integration of AlSi MEMS tunable capacitors and Cu inductors for tunable LC blocks
2006.Hybrid CMOS - Single Electron Transistor Circuits: Promise or Dream
2006.Coulomb blockade in gate-all-around silicon nanowire MOSFETs
2006. p. 25 - 26.Pentacene organic MOSFETs with Au and Pt bottom contacts
2006. p. 301 - 304. DOI : 10.1109/SMICND.2006.284003.A Highly Scalable High Voltage MOSFET Model
2006. ESSDERC 2006, Montreux, Switzerland, 19-21 September 2006. p. 270 - 273. DOI : 10.1109/ESSDER.2006.307690.Local volume inversion and corner effects in triangular gate-all-around MOSFETs
2006. ESSDERC 2006. p. 359 - 362. DOI : 10.1109/ESSDER.2006.307712..Electro-Mechanical Modeling of MEMS Resonators with MOSFET detection
2005.Electrical conduction in 10nm-thin polysilicon wires from 4K to 400K and their operation for hybrid memory
2005.A Physical Analysis of High Voltage MOSFET Capacitance Behaviour
2005. p. 473 - 477. DOI : 10.1109/ISIE.2005.1528963.Low temperature investigation of electrical conduction in polysilicon: simulation and experiment
2005.Design and Fabrication Issues in Ultra-Thin Film SOI MEMS resonators
2005.Realization of Multiple Valued Logic and Memory by Hybrid SETMOS Architecture
IEEE Transactions on Nanotechnology. 2005. DOI : 10.1109/TNANO.2005.858602.High Performance Copper / Polyimide Inductors Fabricated Using Thick Double Metal Layer Damascene Process
2005.A hybrid CMOS-SET co-fabrication platform using nano-grain polysilicon wires
2005. 30th International Conference on Micro- and Nano-Engineering (MNE 2004), Rotterdam,Netherlands, 19-22 September 2004. p. 239 - 343. DOI : 10.1016/j.mee.2004.12.033.RF MEMS switches for mobile communications : from metal-metal to suspended-gate MOS device architectures
2005.Tunable Oscillating CMOS Pixel for Subretinal Implants
2005. IEEE Sensors 2005. DOI : 10.1109/ICSENS.2005.1597827.Nanostencil-based lithography for silicon nanowires fabrication
2005.Comparison of RSG-MOSFET and capacitive MEMS resonator detection
IEE Electronics Letters. 2005. DOI : 10.1049/el:20047409.AlSi-based Resonant Suspended-Gate MOSFET
2005. 6th MEMSWAVE, Lausanne, Switzerland, June 23-24, 2005.Light phase modulator
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2005. p. 551 - 554. DOI : 10.1109/RELPHY.2005.1493146.Nanowire for Room Temperature Operated Hybrid CMOS-‘NANO’ Integrated Circuits
2005. IEEE International Solid-State Circuits Conference (ISSCC’05), San Francisco, California, USA, February 6-10. p. 260 - 262. DOI : 10.1109/ISSCC.2005.1493968.25.5 Mhz Silicon-on-insulator Bulk-mode Resonators: Design, Fabrication and Electrical Characterization
2005.Scaling SOI photonics to micron and sub-micron devices
2005. Opto-Ireland 2005: Nanotechnology and Nanophotonics, Dublin, Ireland, 2005. p. 13 - 22. DOI : 10.1117/12.604845.Compact gate-all-around silicon light modulator for ultra high speed operation
2005.Polyimide sacrificial layer process for SOI SG-MOSFET pressure sensor
2005. 31th International Conference on Micro- and Nano-Engineering (MNE), Vienna, Austria, September 19-22, 2005.Silicon nanowires patterning by sidewall and nano-oxidation processing
2005.New Logic Family Based on Hybrid MOSFET-Polysilicon Nano-Wires
2005. IEEE International Electron Device Meeting (IEDM), Washington, D.C., USA, December 5-7. p. 269 - 272. DOI : 10.1109/IEDM.2005.1609325.Electrical characterization and modelling of lateral DMOS transistor : investigation of capacitances and hot-carrier impact
Lausanne, EPFL, 2005. DOI : 10.5075/epfl-thesis-3200.Fabrication of polysilicon gated-nanowires and their application for pA precision current measurements
2005. 13th International Conference on Solid-State Sensors, Actuators and Microsystems (TRANSDUCERS '05), Seoul, Korea, June 5-9. p. 859 - 862. DOI : 10.1109/SENSOR.2005.1496553.Conduction in ultra-thin SOI nanowires prototyped by FIB milling
2005.An outlook of technology scaling beyond Moore's law
2005.Suspended-Gate MOSFET: bringing new MEMS functionality into solid-state MOS transistor
2005. p. 479 - 481. DOI : 10.1109/IEDM.2005.1609384.CMOS pixels for subretinal implantable prothesis
IEEE SENSORS JOURNAL. 2005. DOI : 10.1109/JSEN.2004.839895.Teaching & PhD
Teaching
Electrical and Electronics Engineering