Mihai Adrian Ionescu
Full Professor
adrian.ionescu@epfl.ch +41 21 693 39 78 http://nanolab.epfl.ch
Citizenship : Swiss and Romanian
EPFL STI IEL NANOLAB
ELB 335 (Bâtiment ELB)
Station 11
CH-1015 Lausanne
41 21 693 39 78
41 21 693 39 79
Office: ELB 335
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NANOLAB
Web site: Web site: https://nanolab.epfl.ch/
41 21 693 39 78
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Fields of expertise
Nanoelectronic devices
Nanotechnology
Edge AI energy efficient technology
Phase change materials and devices
Quantum technology
Modeling and Simulation of Solid-State Electronic Devices
Nanotechnology
Edge AI energy efficient technology
Phase change materials and devices
Quantum technology
Modeling and Simulation of Solid-State Electronic Devices
Mission
The Nanoelectronic Devices group (NANOLAB) is working on various subjects in the field of silicon micro/nano-electronics with special emphasis on the technology, design and modelling of nanoscale solid-state devices for energy efficient Edge AI applications.
The group is interested in exploring new materials, novel fabrication techniques, and novel device concepts for future nanoelectronic systems, including silcion quantum computing.
The group is interested in exploring new materials, novel fabrication techniques, and novel device concepts for future nanoelectronic systems, including silcion quantum computing.
Biography
Adrian M. Ionescu is Full Professor at the Swiss Federal Institute of Technology, Lausanne, Switzerland. He received the B.S./M.S. and Ph.D. degrees from the Polytechnic Institute of Bucharest, Romania and the National Polytechnic Institute of Grenoble, France, in 1989 and 1997, respectively. He has held staff and/or visiting positions at LETI-CEA, Grenoble, France and INP Grenoble, France and Stanford University, USA, in 1998 and 1999.
Dr. Ionescu has published more than 600 articles in international journals and conferences. He received many Best Paper Awards in international conferences, the Annual Award of the Technical Section of the Romanian Academy of Sciences in 1994 and the Blondel Medal in 2009 for contributions to the progress in engineering sciences in the domain of electronics. He is the 2013 recipient of the IBM Faculty Award in Engineering. He served the IEDM and VLSI conference technical committees and was the Technical Program Committee (Co)Chair of ESSDERC in 2006 and 2013. He is a member of the SATW.
He is director of the Laboratory of Micro/Nanoelectronic Devices (NANOLAB).
Dr. Ionescu has published more than 600 articles in international journals and conferences. He received many Best Paper Awards in international conferences, the Annual Award of the Technical Section of the Romanian Academy of Sciences in 1994 and the Blondel Medal in 2009 for contributions to the progress in engineering sciences in the domain of electronics. He is the 2013 recipient of the IBM Faculty Award in Engineering. He served the IEDM and VLSI conference technical committees and was the Technical Program Committee (Co)Chair of ESSDERC in 2006 and 2013. He is a member of the SATW.
He is director of the Laboratory of Micro/Nanoelectronic Devices (NANOLAB).
Publications
Infoscience publications
Infoscience
A hybrid III-V tunnel FET and MOSFET technology platform integrated on silicon
Nature Electronics. 2021-02-08. DOI : 10.1038/s41928-020-00531-3.Extended gate field-effect-transistor for sensing cortisol stress hormone
Communications Materials. 2021-01-19. DOI : 10.1038/s43246-020-00114-x.Networks of Coupled VO2 Oscillators for Neuromorphic Computing
Lausanne, EPFL, 2021. DOI : 10.5075/epfl-thesis-9303.Antibodies fragments as enablers of cardiac troponin (cTn) detection with extended gate metal-oxide-semiconductor field effect transistors (EGFET)
2020-11-01. p. 1699-1699.Intrinsic or nucleation-driven switching: An insight from nanoscopic analysis of negative capacitance Hf1-xZrxO2-based structures
Applied Physics Letters. 2020-10-26. DOI : 10.1063/5.0021272.Temperature dependence of reconfigurable bandstop filters using vanadium dioxide switches
Applied Physics Letters. 2020-10-26. DOI : 10.1063/5.0021942.The 3D Smith Chart: From Theory to Experimental Reality
IEEE Microwave Magazine. 2020-10-09. DOI : 10.1109/MMM.2020.3014984.3D Smith chart constant quality factor semi-circles contours for positive and negative resistance circuits
IEEE Access. 2020-09-30. DOI : 10.1109/ACCESS.2020.3026917.Corrections to “Experimental Details of a Steep-Slope Ferroelectric InGaAs Tunnel-FET With High-Quality PZT and Modeling Insights in the Transient Polarization”
Ieee Transactions On Electron Devices. 2020-07-01. DOI : 10.1109/TED.2020.2995786.Experimental Investigation of Pulsed Laser Deposition of Ferroelectric Gd:HfO2 in a CMOS BEOL Compatible Process
Acs Applied Electronic Materials. 2020-06-23. DOI : 10.1021/acsaelm.0c00319.Nanowire Tunnel FET with Simultaneously Reduced Subthermionic Subthreshold Swing and Off-Current due to Negative Capacitance and Voltage Pinning Effects
Nano Letters. 2020-05-13. DOI : 10.1021/acs.nanolett.9b05356.WSe2/SnSe2 vdW heterojunction Tunnel FET with subthermionic characteristic and MOSFET co-integrated on same WSe2 flake
Npj 2D Materials And Applications. 2020-04-30. DOI : 10.1038/s41699-020-0142-2.Subthermionic negative capacitance ion sensitive field-effect transistor
Applied Physics Letters. 2020-04-27. DOI : 10.1063/5.0005411.Radio-Frequency Characteristics of Ge-doped Vanadium Dioxide Thin Films with Increased Transition Temperature
ACS Applied Electronic Materials. 2020-04-16. DOI : 10.1021/acsaelm.0c00078.An Experimental Study on Mixed-Dimensional 1D-2D van der Waals Single-Walled Carbon Nanotube-WSe2 Hetero-Junction
IEEE Electron Device Letters. 2020-04-01. DOI : 10.1109/LED.2020.2974400.Extended Gate Field Effect Transistor Based Sensor for Detection of Trace Amounts of Anti-Depressant Drug
Ieee Access. 2020-01-01. DOI : 10.1109/ACCESS.2020.3034691.Negative Capacitance Double-Gate Junctionless FETs: A Charge-Based Modeling Investigation of Swing, Overdrive and Short Channel Effect
Ieee Journal Of The Electron Devices Society. 2020-01-01. DOI : 10.1109/JEDS.2020.3020976.Monolithically Integrated Catalyst-Free High Aspect Ratio InAs-on-Insulator (InAsOI) FinFETs for pH Sensing
Ieee Journal Of The Electron Devices Society. 2020-01-01. DOI : 10.1109/JEDS.2020.3008094.InAs-on-Insulator Fin Nanostructures for Integrated Computation and Sensing Functions
Lausanne, EPFL, 2020. DOI : 10.5075/epfl-thesis-7303.At the end of scaling: 2D materials for computing and sensing applications
Lausanne, EPFL, 2020. DOI : 10.5075/epfl-thesis-7695.Negative capacitance semiconductor sensor
EP3671199 ; US2020194592 . 2020.Scaled resistively-coupled VO2 oscillators for neuromorphic computing
Solid-State Electronics. 2020. DOI : 10.1016/j.sse.2019.107729.High-Performance III-V MOSFETs and Tunnel-FETs Integrated on Silicon
Lausanne, EPFL, 2020. DOI : 10.5075/epfl-thesis-8346.Sweat monitoring with CMOS compatible technology: ISFETS and beyond
Lausanne, EPFL, 2020. DOI : 10.5075/epfl-thesis-7464.Experimental Details of a Steep-Slope Ferroelectric InGaAs Tunnel-FET With High-Quality PZT and Modeling Insights in the Transient Polarization
IEEE Transactions on Electron Devices. 2019-12-17. DOI : 10.1109/TED.2019.2954585.3D Smith charts scattering parameters frequency-dependent orientation analysis and complex-scalar multi-parameter characterization applied to Peano reconfigurable vanadium dioxide inductors
Scientific Reports. 2019-12-04. DOI : 10.1038/s41598-019-54600-5.Detection of ultra-low protein concentrations with the simplest possible field effect transistor
Nanotechnology. 2019-08-09. DOI : 10.1088/1361-6528/ab192c.Hysteresis Dynamics in Double-Gated n-Type WSe2 FETs With High-k Top Gate Dielectric
IEEE Journal of the Electron Devices Society. 2019-08-07. DOI : 10.1109/JEDS.2019.2933745.Sweat Biomarker Sensor Incorporating Picowatt, Three-Dimensional Extended Metal Gate Ion Sensitive Field Effect Transistors
ACS Sensors. 2019-07-08. DOI : 10.1021/acssensors.9b00597.Negative Capacitance as Universal Digital and Analog Performance Booster for Complementary MOS Transistors
Scientific Reports. 2019-06-24. DOI : 10.1038/s41598-019-45628-8.A Novel Reconfigurable CMOS Compatible Ka Band Bandstop Structure Using Split-Ring Resonators and Vanadium Dioxide (VO2) Phase Change Switches
2019-05-07. 2019 IEEE MTT-S International Microwave Symposium (IMS), Boston, June 7-11,2019. p. 865-867. DOI : 10.1109/MWSYM.2019.8701121.NanoElectronics roadmap for Europe: From nanodevices and innovative materials to system integration
Solid-State Electronics. 2019-05-01. DOI : 10.1016/j.sse.2019.03.014.Resistive Coupled VO2 Oscillators for Image Recognition
2019-02-11. 2018 IEEE International Conference on Rebooting Computing (ICRC), McLean, VA, USA, 7-9 Nov. 2018. p. 1-7. DOI : 10.1109/ICRC.2018.8638626.Near Hysteresis-Free Negative Capacitance InGaAs Tunnel FETs with Enhanced Digital and Analog Figures of Merit below VDD=400mV
2019-01-17. IEEE International Electron Devices Meeting (IEDM). DOI : 10.1109/IEDM.2018.8614583.Millimeter-wave-triggering of insulator-to-metal transition in Vanadium dioxide
2019-01-01. 44th International Conference on Infrared, Millimeter, and Terahertz Waves (IRMMW-THz), Paris, FRANCE, Sep 01-06, 2019. DOI : 10.1109/IRMMW-THz.2019.8874271.VO2 oscillators coupling for Neuromorphic Computation
2019-01-01. Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon (EUROSOI-ULIS), Grenoble, FRANCE, Apr 01-03, 2019.Sub-Thermionic Scalable III-V Tunnel Field-Effect Transistors Integrated on Si (100)
2019-01-01. 65th IEEE Annual International Electron Devices Meeting (IEDM), San Francisco, CA, Dec 09-11, 2019. DOI : 10.1109/IEDM19573.2019.8993610.Transient Negative Capacitance of Silicon-doped HfO2 in MFMIS and MFIS structures: experimental insights for hysteresis-free steep slope NC FETs
2019-01-01. 65th IEEE Annual International Electron Devices Meeting (IEDM), San Francisco, CA, Dec 09-11, 2019.Co-integrated Subthermionic 2D/2D WSe2/SnSe2 Vertical Tunnel FET and WSe2 MOSFET on same flake: towards a 2D/2D vdW Dual-Transport Steep Slope FET
2019-01-01. 65th IEEE Annual International Electron Devices Meeting (IEDM), San Francisco, CA, Dec 09-11, 2019. DOI : 10.1109/IEDM19573.2019.8993643.Monolithically integrated catalyst-free High Aspect Ratio InAs-On-Insulator (InAsOI) FinFETs for pH sensing
2019-01-01. 49th European Solid-State Device Research Conference (ESSDERC), Cracow, POLAND, Sep 23-26, 2019. p. 106-109.Field-effect transistor device or sensor for sensing ions, molecules or biomarkers in a fluid
EP3811071 ; CN112567238 ; WO2019244113 . 2019.Double-gate field-effect-transistor based biosensor
US2020284753 ; EP3679363 ; WO2019048059 . 2019.Apparatus for non-invasive sensing of biomarkers in human sweat
EP3697317 ; WO2019076733 ; WO2019076733 ; US2019110722 . 2019.Sensing device for sensing minor charge variations
US10818785 ; US2019172937 . 2019.Capillary flow device for bio-fluid collection with semiconductor sensors
US2019246959 ; EP3510403 ; US2018070869 ; WO2018047125 . 2019.Wearable System for Real-Time Sensing of Biomarkers in Human Sweat
Lausanne, EPFL, 2019. DOI : 10.5075/epfl-thesis-9696.Exploration of Negative Capacitance Devices and Technologies
Lausanne, EPFL, 2019. DOI : 10.5075/epfl-thesis-9340.Three-Dimensional Integrated Ultra-Low-Volume Passive Microfluidics with Ion-Sensitive Field-Effect Transistors for Multiparameter Wearable Sweat Analyzers
ACS Nano. 2018-12-13. DOI : 10.1021/acsnano.8b07413.Double gate n-type WSe2 FETs with high-k top gate dielectric and enhanced electrostatic control
2018-10-11. 48th European Solid-State Device Research Conference - ESSDERC 2018, 3-6 Sept. 2018 , Dresden, Germany. p. 114-117. DOI : 10.1109/ESSDERC.2018.8486867.A Review and Mathematical Treatment of Infinity on the Smith Chart, 3D Smith Chart and Hyperbolic Smith Chart
Symmetry-Basel. 2018-10-01. DOI : 10.3390/sym10100458.Gate Leakage Tunneling Impact on the InAs/GaSb Heterojunction Electron-Hole Bilayer Tunneling Field-Effect Transistor
IEEE Transactions on Electron Devices. 2018-10-01. DOI : 10.1109/TED.2018.2866123.Genuinely Ferroelectric Sub-1-Volt-Switchable Nanodomains in HfxZr(1-x)O2 Ultrathin Capacitors
Acs Applied Materials & Interfaces. 2018-09-12. DOI : 10.1021/acsami.8b07988.A Reconfigurable Inductor Based on Vanadium Dioxide Insulator-to-Metal Transition
Ieee Microwave And Wireless Components Letters. 2018-09-01. DOI : 10.1109/LMWC.2018.2854961.Steep Slope Transistors for Quantum Computing
2018-07-31. IEEE 2nd Electron Devices Technology and Manufacturing Conference - EDTM 2018, Kobe, Japan , 13-16 March 2018 . p. 56-58. DOI : 10.1109/EDTM.2018.8421422.Low power analog frontend for ISFET sensor readout
2018-07-15. 17th International Meeting on Chemical Sensors - IMCS 2018, Vienna, Austria, 2018-07-15 - 2018-07-19. DOI : 10.5162/IMCS2018/FE.1.Design Considerations of Ferroelectric Properties for Negative Capacitance MOSFETs
2018-03-13.Effect of hysteretic and non-hysteretic negative capacitance on tunnel FETs DC performance
Nanotechnology. 2018-01-26. DOI : 10.1088/1361-6528/aaa590.MoS2/VO2 vdW heterojunction devices: Tunable rectifiers, photodiodes and field effect transistors
2018-01-25. IEDM, San Francisco, California, USA, December 2-6, 2017. DOI : 10.1109/IEDM.2017.8268503.Negative capacitance tunnel F£Ts: Experimental demonstration of outstanding simultaneous boosting of on-current, transconductance, overdrive, and swing
2018-01-01. 2017 Silicon Nanoelectronics Workshop, Kyoto, Japan, June 4-5, 2017. DOI : 10.23919/SNW.2017.8242270.Tunnel fet based non-volatile memory boosted by vertical band-to-band tunneling
US2018012659 . 2018.Capillary flow device for bio-fluid collection with semiconductor sensors
US2019246959 ; EP3510403 ; US2018070869 ; WO2018047125 . 2018.Prospects for energy-efficient edge computing with integrated HfO2-based ferroelectric devices
2018-01-01. 26th IFIP/IEEE International Conference on Very Large Scale Integration (VLSI-SoC), Verona, ITALY, Oct 08-10, 2018. p. 180-183.Near Hysteresis-Free Negative Capacitance InGaAs Tunnel FETs with Enhanced Digital and Analog Figures of Merit below V-DD=400mV
2018-01-01. 64th IEEE Annual International Electron Devices Meeting (IEDM), San Francisco, CA, Dec 01-05, 2018.An Experimental Study of Heterostructure Tunnel FET Nanowire Arrays: Digital and Analog Figures of Merit from 300K to 10K
2018-01-01. 64th IEEE Annual International Electron Devices Meeting (IEDM), San Francisco, CA, Dec 01-05, 2018.Resistive coupled VO2 oscillators for image recognition
2018-01-01. 3rd IEEE International Conference on Rebooting Computing (ICRC), Tysons, VA, Nov 07-09, 2018. p. 195-201.All CMOS Integrated 3D-Extended Metal Gate ISFETs for pH and Multi-Ion (Na , K , Ca2 ) sensing
2018-01-01. 64th IEEE Annual International Electron Devices Meeting (IEDM), San Francisco, CA, Dec 01-05, 2018.The Future of Electronics: Silicon to Cloud Technologies
2018-01-01. 20th International Conference on Transparent Optical Networks (ICTON), Bucharest, ROMANIA, Jul 01-05, 2018.Polarity Control of Top Gated Black Phosphorous FETs by Workfunction Engineering of Pre-Patterned Au and Ag Embedded Electrodes
Ieee Journal Of The Electron Devices Society. 2018-01-01. DOI : 10.1109/JEDS.2018.2817289.CMOS 3D-Extended Metal Gate ISFETs with Near Nernstian Ion Sensitivity
2018-01-01. 76th Device Research Conference (DRC), Santa Barbara, CA, Jun 24-27, 2018.Two-Dimensional Materials Negative capacitance gives a positive boost
Nature Nanotechnology. 2018. DOI : 10.1038/s41565-017-0046-2.Magnetoplasmonic enhancement of Faraday rotation in patterned graphene metasurfaces
Physical Review B. 2018. DOI : 10.1103/PhysRevB.97.241410.III-V heterostructure tunnel field-effect transistor
JOURNAL OF PHYSICS-CONDENSED MATTER. 2018. DOI : 10.1088/1361-648X/aac5b4.Confinement-induced InAs/GaSb heterojunction electron-hole bilayer tunneling field-effect transistor
Applied Physics Letters. 2018. DOI : 10.1063/1.5012948.Computing with Ferroelectric FETs: Devices, Models, Systems, and Applications
2018. Proceedings Of The 2018 Design, Automation & Test In Europe Conference & Exhibition (Date), Dresden, GERMANY, Mar 19-23, 2018. p. 1289-1298. DOI : 10.23919/DATE.2018.8342213.Analysis of the Heterogate Electron-Hole Bilayer Tunneling Field-Effect Transistor With Partially Doped Channels: Effects on Tunneling Distance Modulation and Occupancy Probabilities
IEEE TRANSACTIONS ON ELECTRON DEVICES. 2018. DOI : 10.1109/TED.2017.2777666.A Novel Reconfigurable Sub-0.25-V Digital Logic Family Using the Electron-Hole Bilayer TFET
IEEE JOURNAL OF THE ELECTRON DEVICES SOCIETY. 2018. DOI : 10.1109/JEDS.2017.2758018.Wearable System with Integrated Passive Microfluidics for Real-Time Electrolyte Sensing in Human Sweat
Lausanne, EPFL, 2018. DOI : 10.5075/epfl-thesis-8849.Embedded Passive Nano-Liter Micropump For Sweat Collection And Analysis
2018. 31st IEEE International Conference on Micro Electro Mechanical Systems (MEMS), Belfast, NORTH IRELAND, Jan 21-25, 2018. p. 1217-1220.Vanadium Oxide Bandstop Tunable Filter for Ka Frequency Bands Based on a Novel Reconfigurable Spiral Shape Defected Ground Plane CPW
IEEE Access. 2018. DOI : 10.1109/ACCESS.2018.2795463.Tunable RF phase shifters based on Vanadium Dioxide metal insulator transition
IEEE Journal of the Electron Devices Society. 2018. DOI : 10.1109/JEDS.2018.2837869.Novel Digital and Radio Frequency Electronic Functions Enabled by Steep-Slope Phase-Change Devices
Lausanne, EPFL, 2018. DOI : 10.5075/epfl-thesis-8596.Lab on skin™: 3D monolithically integrated zero-energy micro/nanofludics and FD SOI ion sensitive FETs for wearable multi-sensing sweat applications
2017-12-05. 2017 IEEE International Electron Devices Meeting - IEDM 2017, San Francisco, CA, US, December 2-6, 2017. p. 978-1-5386-3559-9. DOI : 10.1109/IEDM.2017.8268413.Energy efficient computing and sensing in the Zettabyte era: From silicon to the cloud
2017. 2017 IEEE International Electron Devices Meeting (IEDM), San Francisco, CA, USA, 2-6 Dec, 2017. DOI : 10.1109/IEDM.2017.8268307.Lab On Skin: 3D Monolitically Integrated Zero-Energy Micro/Nanofluidics and FD SOI Ion Sensitive FETs for Wearable Multi-Sensing Sweat Applications
2017. 63rd International Electron Device Meeting, San Francisco, California, USA.Van der Waals MoS2/VO2 heterostructure junction with tunable rectifier behavior and efficient photoresponse
Scientific Reports. 2017. DOI : 10.1038/s41598-017-12950-y.Lowering motional resistance by partially HfO2 gap filling in double-ended tuning fork MEMS resonators.
2017. 2017 Joint Conference of the European Frequency and Time Forum and IEEE International Frequency Control Symposium ((EFTF/IFC), BESANÇON, France, 9-13 July 2017. p. 805-806. DOI : 10.1109/FCS.2017.8089040.Complementary black phosphorous FETs by workfunction engineering of pre-patterned Au and Ag embedded electrodes
2017. Solid-State Device Research Conference (ESSDERC), 2017 47th European, September, 11-14, 2017. DOI : 10.1109/ESSDERC.2017.8066602.Shunt capacitive switches based on VO2 metal insulator transition for RF phase shifter applications
2017. ESSDERC 2017 - 47th IEEE European Solid-State Device Research Conference (ESSDERC), Leuven, Belgium, 11-14 September 2017. p. 232-235. DOI : 10.1109/ESSDERC.2017.8066634.Negative Capacitance Field Effect Transistors; Capacitance Matching and non-Hysteretic Operation
2017. Solid-State Device Research Conference (ESSDERC), 2017 47th European, Leuven, Belgium, 11-14 Sept. 2017. DOI : 10.1109/ESSDERC.2017.8066596.Negative Capacitance Tunnel FETs: Experimental Demonstration of Outstanding Simultaneous Boosting of On-current, Transconductance, Overdrive, and Swing
2017. Silicon Nanoelectronic Workshop, Kyoto, Japan, June 4-5, 2017.Negative Capacitance Tunnel FETs: Experimental Demonstration of Outstanding Simultaneous Boosting of On-current, Transconductance, Overdrive, and Swing
Silicon Nanoelectronic Workshop, Kyoto, Japan, June 4-5, 2017.Negative Capacitance as Performance Booster for Tunnel FETs and MOSFETs: An Experimental Study
IEEE Electron Device Letters. 2017. DOI : 10.1109/LED.2017.2734943.Low Impedance ALD HfO2 Partially-Filled-Gap Flexural and Bulk MEMS Resonators Piezoresistively Detected for Distributed Mass Sensing
2017. p. 391. DOI : 10.3390/proceedings1040391.Micromechanical resonators with sub-micron gaps filled with high-k dielectrics
Lausanne, EPFL, 2017. DOI : 10.5075/epfl-thesis-7938.A Steep-Slope Transistor Combining Phase-Change and Band-to-Band-Tunneling to Achieve a sub-Unity Body Factor
Scientific Reports. 2017. DOI : 10.1038/s41598-017-00359-6.Modeling and optimization of Tunnel-FET architectures exploiting carrier gas dimensionality
Lausanne, EPFL, 2017. DOI : 10.5075/epfl-thesis-7587.Benchmarking of Homojunction Strained-Si NW Tunnel FETs for Basic Analog Functions
IEEE Transactions on Electron Devices. 2017. DOI : 10.1109/TED.2017.2665527.Low-energy biomarker detection through charge-based impedance measurements
2016-10-30. 2016 IEEE SENSORS, Orlando, FL, USA, October 30th - November 3rd, 2016. DOI : 10.1109/ICSENS.2016.7808744.Hybrid phase-change — Tunnel FET (PC-TFET) switch with subthreshold swing < 10mV/decade and sub-0.1 body factor: Digital and analog benchmarking
2016. 2016 IEEE International Electron Devices Meeting (IEDM), San Francisco, CA, USA, 3-7 December 2016. p. 19.3.1-19.3.4. DOI : 10.1109/IEDM.2016.7838452.Graphene quantum capacitors for high-Q tunable LC-tanks for RF ICs
2016. ESSDERC 2016 - 46th European Solid-State Device Research Conference, Lausanne, Switzerland, 12-15 September 2016. p. 345-348. DOI : 10.1109/ESSDERC.2016.7599657.A hybrid III-V tunnel FET and MOSFET technology platform integrated on silicon
Nature Electronics. 2021-02-08. DOI : 10.1038/s41928-020-00531-3.Extended gate field-effect-transistor for sensing cortisol stress hormone
Communications Materials. 2021-01-19. DOI : 10.1038/s43246-020-00114-x.Networks of Coupled VO2 Oscillators for Neuromorphic Computing
Lausanne, EPFL, 2021. DOI : 10.5075/epfl-thesis-9303.Antibodies fragments as enablers of cardiac troponin (cTn) detection with extended gate metal-oxide-semiconductor field effect transistors (EGFET)
2020-11-01. p. 1699-1699.Intrinsic or nucleation-driven switching: An insight from nanoscopic analysis of negative capacitance Hf1-xZrxO2-based structures
Applied Physics Letters. 2020-10-26. DOI : 10.1063/5.0021272.Temperature dependence of reconfigurable bandstop filters using vanadium dioxide switches
Applied Physics Letters. 2020-10-26. DOI : 10.1063/5.0021942.The 3D Smith Chart: From Theory to Experimental Reality
IEEE Microwave Magazine. 2020-10-09. DOI : 10.1109/MMM.2020.3014984.3D Smith chart constant quality factor semi-circles contours for positive and negative resistance circuits
IEEE Access. 2020-09-30. DOI : 10.1109/ACCESS.2020.3026917.Corrections to “Experimental Details of a Steep-Slope Ferroelectric InGaAs Tunnel-FET With High-Quality PZT and Modeling Insights in the Transient Polarization”
Ieee Transactions On Electron Devices. 2020-07-01. DOI : 10.1109/TED.2020.2995786.Experimental Investigation of Pulsed Laser Deposition of Ferroelectric Gd:HfO2 in a CMOS BEOL Compatible Process
Acs Applied Electronic Materials. 2020-06-23. DOI : 10.1021/acsaelm.0c00319.Nanowire Tunnel FET with Simultaneously Reduced Subthermionic Subthreshold Swing and Off-Current due to Negative Capacitance and Voltage Pinning Effects
Nano Letters. 2020-05-13. DOI : 10.1021/acs.nanolett.9b05356.WSe2/SnSe2 vdW heterojunction Tunnel FET with subthermionic characteristic and MOSFET co-integrated on same WSe2 flake
Npj 2D Materials And Applications. 2020-04-30. DOI : 10.1038/s41699-020-0142-2.Subthermionic negative capacitance ion sensitive field-effect transistor
Applied Physics Letters. 2020-04-27. DOI : 10.1063/5.0005411.Radio-Frequency Characteristics of Ge-doped Vanadium Dioxide Thin Films with Increased Transition Temperature
ACS Applied Electronic Materials. 2020-04-16. DOI : 10.1021/acsaelm.0c00078.An Experimental Study on Mixed-Dimensional 1D-2D van der Waals Single-Walled Carbon Nanotube-WSe2 Hetero-Junction
IEEE Electron Device Letters. 2020-04-01. DOI : 10.1109/LED.2020.2974400.Extended Gate Field Effect Transistor Based Sensor for Detection of Trace Amounts of Anti-Depressant Drug
Ieee Access. 2020-01-01. DOI : 10.1109/ACCESS.2020.3034691.Negative Capacitance Double-Gate Junctionless FETs: A Charge-Based Modeling Investigation of Swing, Overdrive and Short Channel Effect
Ieee Journal Of The Electron Devices Society. 2020-01-01. DOI : 10.1109/JEDS.2020.3020976.Monolithically Integrated Catalyst-Free High Aspect Ratio InAs-on-Insulator (InAsOI) FinFETs for pH Sensing
Ieee Journal Of The Electron Devices Society. 2020-01-01. DOI : 10.1109/JEDS.2020.3008094.InAs-on-Insulator Fin Nanostructures for Integrated Computation and Sensing Functions
Lausanne, EPFL, 2020. DOI : 10.5075/epfl-thesis-7303.At the end of scaling: 2D materials for computing and sensing applications
Lausanne, EPFL, 2020. DOI : 10.5075/epfl-thesis-7695.Negative capacitance semiconductor sensor
EP3671199 ; US2020194592 . 2020.Scaled resistively-coupled VO2 oscillators for neuromorphic computing
Solid-State Electronics. 2020. DOI : 10.1016/j.sse.2019.107729.High-Performance III-V MOSFETs and Tunnel-FETs Integrated on Silicon
Lausanne, EPFL, 2020. DOI : 10.5075/epfl-thesis-8346.Sweat monitoring with CMOS compatible technology: ISFETS and beyond
Lausanne, EPFL, 2020. DOI : 10.5075/epfl-thesis-7464.Experimental Details of a Steep-Slope Ferroelectric InGaAs Tunnel-FET With High-Quality PZT and Modeling Insights in the Transient Polarization
IEEE Transactions on Electron Devices. 2019-12-17. DOI : 10.1109/TED.2019.2954585.3D Smith charts scattering parameters frequency-dependent orientation analysis and complex-scalar multi-parameter characterization applied to Peano reconfigurable vanadium dioxide inductors
Scientific Reports. 2019-12-04. DOI : 10.1038/s41598-019-54600-5.Detection of ultra-low protein concentrations with the simplest possible field effect transistor
Nanotechnology. 2019-08-09. DOI : 10.1088/1361-6528/ab192c.Hysteresis Dynamics in Double-Gated n-Type WSe2 FETs With High-k Top Gate Dielectric
IEEE Journal of the Electron Devices Society. 2019-08-07. DOI : 10.1109/JEDS.2019.2933745.Sweat Biomarker Sensor Incorporating Picowatt, Three-Dimensional Extended Metal Gate Ion Sensitive Field Effect Transistors
ACS Sensors. 2019-07-08. DOI : 10.1021/acssensors.9b00597.Negative Capacitance as Universal Digital and Analog Performance Booster for Complementary MOS Transistors
Scientific Reports. 2019-06-24. DOI : 10.1038/s41598-019-45628-8.A Novel Reconfigurable CMOS Compatible Ka Band Bandstop Structure Using Split-Ring Resonators and Vanadium Dioxide (VO2) Phase Change Switches
2019-05-07. 2019 IEEE MTT-S International Microwave Symposium (IMS), Boston, June 7-11,2019. p. 865-867. DOI : 10.1109/MWSYM.2019.8701121.NanoElectronics roadmap for Europe: From nanodevices and innovative materials to system integration
Solid-State Electronics. 2019-05-01. DOI : 10.1016/j.sse.2019.03.014.Resistive Coupled VO2 Oscillators for Image Recognition
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2019-01-17. IEEE International Electron Devices Meeting (IEDM). DOI : 10.1109/IEDM.2018.8614583.Millimeter-wave-triggering of insulator-to-metal transition in Vanadium dioxide
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2019-01-01. Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon (EUROSOI-ULIS), Grenoble, FRANCE, Apr 01-03, 2019.Sub-Thermionic Scalable III-V Tunnel Field-Effect Transistors Integrated on Si (100)
2019-01-01. 65th IEEE Annual International Electron Devices Meeting (IEDM), San Francisco, CA, Dec 09-11, 2019. DOI : 10.1109/IEDM19573.2019.8993610.Transient Negative Capacitance of Silicon-doped HfO2 in MFMIS and MFIS structures: experimental insights for hysteresis-free steep slope NC FETs
2019-01-01. 65th IEEE Annual International Electron Devices Meeting (IEDM), San Francisco, CA, Dec 09-11, 2019.Co-integrated Subthermionic 2D/2D WSe2/SnSe2 Vertical Tunnel FET and WSe2 MOSFET on same flake: towards a 2D/2D vdW Dual-Transport Steep Slope FET
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2019-01-01. 49th European Solid-State Device Research Conference (ESSDERC), Cracow, POLAND, Sep 23-26, 2019. p. 106-109.Field-effect transistor device or sensor for sensing ions, molecules or biomarkers in a fluid
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2018-10-11. 48th European Solid-State Device Research Conference - ESSDERC 2018, 3-6 Sept. 2018 , Dresden, Germany. p. 114-117. DOI : 10.1109/ESSDERC.2018.8486867.A Review and Mathematical Treatment of Infinity on the Smith Chart, 3D Smith Chart and Hyperbolic Smith Chart
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IEEE Transactions on Electron Devices. 2018-10-01. DOI : 10.1109/TED.2018.2866123.Genuinely Ferroelectric Sub-1-Volt-Switchable Nanodomains in HfxZr(1-x)O2 Ultrathin Capacitors
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Ieee Microwave And Wireless Components Letters. 2018-09-01. DOI : 10.1109/LMWC.2018.2854961.Steep Slope Transistors for Quantum Computing
2018-07-31. IEEE 2nd Electron Devices Technology and Manufacturing Conference - EDTM 2018, Kobe, Japan , 13-16 March 2018 . p. 56-58. DOI : 10.1109/EDTM.2018.8421422.Low power analog frontend for ISFET sensor readout
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2018-01-01. 64th IEEE Annual International Electron Devices Meeting (IEDM), San Francisco, CA, Dec 01-05, 2018.An Experimental Study of Heterostructure Tunnel FET Nanowire Arrays: Digital and Analog Figures of Merit from 300K to 10K
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2018-01-01. 20th International Conference on Transparent Optical Networks (ICTON), Bucharest, ROMANIA, Jul 01-05, 2018.Polarity Control of Top Gated Black Phosphorous FETs by Workfunction Engineering of Pre-Patterned Au and Ag Embedded Electrodes
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IEEE TRANSACTIONS ON ELECTRON DEVICES. 2018. DOI : 10.1109/TED.2017.2777666.A Novel Reconfigurable Sub-0.25-V Digital Logic Family Using the Electron-Hole Bilayer TFET
IEEE JOURNAL OF THE ELECTRON DEVICES SOCIETY. 2018. DOI : 10.1109/JEDS.2017.2758018.Wearable System with Integrated Passive Microfluidics for Real-Time Electrolyte Sensing in Human Sweat
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2018. 31st IEEE International Conference on Micro Electro Mechanical Systems (MEMS), Belfast, NORTH IRELAND, Jan 21-25, 2018. p. 1217-1220.Vanadium Oxide Bandstop Tunable Filter for Ka Frequency Bands Based on a Novel Reconfigurable Spiral Shape Defected Ground Plane CPW
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IEEE Journal of the Electron Devices Society. 2018. DOI : 10.1109/JEDS.2018.2837869.Novel Digital and Radio Frequency Electronic Functions Enabled by Steep-Slope Phase-Change Devices
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2017-12-05. 2017 IEEE International Electron Devices Meeting - IEDM 2017, San Francisco, CA, US, December 2-6, 2017. p. 978-1-5386-3559-9. DOI : 10.1109/IEDM.2017.8268413.Energy efficient computing and sensing in the Zettabyte era: From silicon to the cloud
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2017. 63rd International Electron Device Meeting, San Francisco, California, USA.Van der Waals MoS2/VO2 heterostructure junction with tunable rectifier behavior and efficient photoresponse
Scientific Reports. 2017. DOI : 10.1038/s41598-017-12950-y.Lowering motional resistance by partially HfO2 gap filling in double-ended tuning fork MEMS resonators.
2017. 2017 Joint Conference of the European Frequency and Time Forum and IEEE International Frequency Control Symposium ((EFTF/IFC), BESANÇON, France, 9-13 July 2017. p. 805-806. DOI : 10.1109/FCS.2017.8089040.Complementary black phosphorous FETs by workfunction engineering of pre-patterned Au and Ag embedded electrodes
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2017. Silicon Nanoelectronic Workshop, Kyoto, Japan, June 4-5, 2017.Negative Capacitance Tunnel FETs: Experimental Demonstration of Outstanding Simultaneous Boosting of On-current, Transconductance, Overdrive, and Swing
Silicon Nanoelectronic Workshop, Kyoto, Japan, June 4-5, 2017.Negative Capacitance as Performance Booster for Tunnel FETs and MOSFETs: An Experimental Study
IEEE Electron Device Letters. 2017. DOI : 10.1109/LED.2017.2734943.Low Impedance ALD HfO2 Partially-Filled-Gap Flexural and Bulk MEMS Resonators Piezoresistively Detected for Distributed Mass Sensing
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IEEE Transactions on Electron Devices. 2017. DOI : 10.1109/TED.2017.2665527.Low-energy biomarker detection through charge-based impedance measurements
2016-10-30. 2016 IEEE SENSORS, Orlando, FL, USA, October 30th - November 3rd, 2016. DOI : 10.1109/ICSENS.2016.7808744.Hybrid phase-change — Tunnel FET (PC-TFET) switch with subthreshold swing < 10mV/decade and sub-0.1 body factor: Digital and analog benchmarking
2016. 2016 IEEE International Electron Devices Meeting (IEDM), San Francisco, CA, USA, 3-7 December 2016. p. 19.3.1-19.3.4. DOI : 10.1109/IEDM.2016.7838452.Graphene quantum capacitors for high-Q tunable LC-tanks for RF ICs
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Teaching
Electrical and Electronics Engineering