Mihai Adrian Ionescu
Professeur ordinaire
adrian.ionescu@epfl.ch +41 21 69 33978 http://nanolab.epfl.ch
Nationalité : Romanian
Publications
A. Saeidi; F. Jazaeri; I. Stlichnov; C. Enz; M. A. Ionescu : Design Considerations of Ferroelectric Properties for Negative Capacitance MOSFETs. 2018-03-13.
A. Saeidi; F. Jazaeri; I. Stolichnov; G. V. Luong; Q.-T. Zhao et al. : Effect of hysteretic and non-hysteretic negative capacitance on tunnel FETs DC performance. 2018-01-26. DOI : 10.1088/1361-6528/aaa590..
N. Oliva; E. A. Casu; C. Yan; A. Krammer; A. Magrez et al. : MoS2/VO2 vdW heterojunction devices: Tunable rectifiers, photodiodes and field effect transistors. 2018-01-25. IEDM, San Francisco, California, USA, December 2-6, 2017. DOI : 10.1109/IEDM.2017.8268503.
A. Ionescu : Two-Dimensional Materials Negative capacitance gives a positive boost; Nature Nanotechnology. 2018. DOI : 10.1038/s41565-017-0046-2.
M. Tamagnone; T. Slipchenko; C. Moldovan; P. Liu; A. Centeno et al. : Magnetoplasmonic enhancement of Faraday rotation in patterned graphene metasurfaces; PHYSICAL REVIEW B. 2018. DOI : 10.1103/PhysRevB.97.241410.
C. Convertino; C. Zota; H. Schmid; A. Ionescu; K. Moselund : III-V heterostructure tunnel field-effect transistor; JOURNAL OF PHYSICS-CONDENSED MATTER. 2018. DOI : 10.1088/1361-648X/aac5b4.
J. Padilla; C. Medina-Bailon; C. Alper; F. Gamiz; A. Ionescu : Confinement-induced InAs/GaSb heterojunction electron-hole bilayer tunneling field-effect transistor; APPLIED PHYSICS LETTERS. 2018. DOI : 10.1063/1.5012948.
A. Aziz; E. Breyer; A. Chen; X. Chen; S. Datta et al. : Computing with Ferroelectric FETs: Devices, Models, Systems, and Applications. 2018. Proceedings Of The 2018 Design, Automation & Test In Europe Conference & Exhibition (Date), Dresden, GERMANY, Mar 19-23, 2018. p. 1289-1298. DOI : 10.23919/DATE.2018.8342213.
J. Padilla; C. Medina-Bailon; C. Navarro; C. Alper; F. Gamiz et al. : Analysis of the Heterogate Electron-Hole Bilayer Tunneling Field-Effect Transistor With Partially Doped Channels: Effects on Tunneling Distance Modulation and Occupancy Probabilities; IEEE TRANSACTIONS ON ELECTRON DEVICES. 2018. DOI : 10.1109/TED.2017.2777666.
C. Alper; J. Padilla; P. Palestri; A. Ionescu : A Novel Reconfigurable Sub-0.25-V Digital Logic Family Using the Electron-Hole Bilayer TFET; IEEE JOURNAL OF THE ELECTRON DEVICES SOCIETY. 2018. DOI : 10.1109/JEDS.2017.2758018.
E. A. Garcia Cordero / M. A. Ionescu (Dir.) : Wearable System with Integrated Passive Microfluidics for Real-Time Electrolyte Sensing in Human Sweat. Lausanne, EPFL, 2018. DOI : 10.5075/epfl-thesis-8849.
E. A. Garcia Cordero; F. Wildhaber; F. Bellando; J. F. Longo; M. Fernandez-Bolanos Badia et al. : Embedded Passive Nano-Liter Micropump For Sweat Collection And Analysis. 2018. 31st IEEE International Conference on Micro Electro Mechanical Systems (MEMS), Belfast, NORTH IRELAND, Jan 21-25, 2018. p. 1217-1220.
E. A. Casu; A. A. Muller; M. Fernandez-Bolanos; A. Fumarola; A. Krammer et al. : Vanadium Oxide Bandstop Tunable Filter for Ka Frequency Bands Based on a Novel Reconfigurable Spiral Shape Defected Ground Plane CPW; IEEE Access. 2018. DOI : 10.1109/ACCESS.2018.2795463.
E. A. Casu; N. Oliva; M. Cavalieri; A. Muller; A. Fumarola et al. : Tunable RF phase shifters based on Vanadium Dioxide metal insulator transition; IEEE Journal of the Electron Devices Society. 2018. DOI : 10.1109/JEDS.2018.2837869.
E. A. Casu / M. A. Ionescu; M. Fernandez-Bolanos Badia (Dir.) : Novel Digital and Radio Frequency Electronic Functions Enabled by Steep-Slope Phase-Change Devices. Lausanne, EPFL, 2018. DOI : 10.5075/epfl-thesis-8596.
F. Bellando; E. A. Garcia Cordero; F. Wildhaber; J. F. Longo; H. M. Guérin et al. : Lab On Skin: 3D Monolitically Integrated Zero-Energy Micro/Nanofluidics and FD SOI Ion Sensitive FETs for Wearable Multi-Sensing Sweat Applications. 2017. 63rd International Electron Device Meeting, San Francisco, California, USA.
N. Oliva; E. A. Casu; C. Yan; A. Krammer; T. Rosca et al. : Van der Waals MoS2/VO2 heterostructure junction with tunable rectifier behavior and efficient photoresponse; Scientific reports. 2017. DOI : 10.1038/s41598-017-12950-y.
M. M. Lopez; E. A. Casu; A. M. Ionescu; M. Fernandez-Bolanos : Lowering motional resistance by partially HfO2 gap filling in double-ended tuning fork MEMS resonators.. 2017. 2017 Joint Conference of the European Frequency and Time Forum and IEEE International Frequency Control Symposium ((EFTF/IFC), BESANÇON, France, 9-13 July 2017. p. 805-806. DOI : 10.1109/FCS.2017.8089040.
N. Oliva; E. A. Casu; W. A. Vitale; I. Stolichnov; M. A. Ionescu : Complementary black phosphorous FETs by workfunction engineering of pre-patterned Au and Ag embedded electrodes. 2017. Solid-State Device Research Conference (ESSDERC), 2017 47th European, September, 11-14, 2017. DOI : 10.1109/ESSDERC.2017.8066602.
E. A. Casu; W. A. Vitale; M. Tamagnone; M. M. Lopez; N. Oliva et al. : Shunt capacitive switches based on VO2 metal insulator transition for RF phase shifter applications. 2017. ESSDERC 2017 - 47th IEEE European Solid-State Device Research Conference (ESSDERC), Leuven, Belgium, 11-14 September 2017. p. 232-235. DOI : 10.1109/ESSDERC.2017.8066634.
A. Saeidi; F. Jazaeri; F. Bellando; I. Stolichnov; C. Enz et al. : Negative Capacitance Field Effect Transistors; Capacitance Matching and non-Hysteretic Operation. 2017. Solid-State Device Research Conference (ESSDERC), 2017 47th European, Leuven, Belgium, 11-14 Sept. 2017. DOI : 10.1109/ESSDERC.2017.8066596.
A. Saeidi; F. Jazaeri; I. Stolichnov; G. V. Luong; Q.-T. Zhao et al. : Negative Capacitance Tunnel FETs: Experimental Demonstration of Outstanding Simultaneous Boosting of On-current, Transconductance, Overdrive, and Swing. 2017. Silicon Nanoelectronic Workshop, Kyoto, Japan, June 4-5, 2017.
A. Saeidi; F. Jazaeri; I. Stolichnov; G. V. Luong; Q.-T. Zhao et al. : Negative Capacitance Tunnel FETs: Experimental Demonstration of Outstanding Simultaneous Boosting of On-current, Transconductance, Overdrive, and Swing ; Silicon Nanoelectronic Workshop, Kyoto, Japan, June 4-5, 2017.
A. Saeidi; F. Jazaeri; F. Bellando; I. Stolichnov; G. V. Luong et al. : Negative Capacitance as Performance Booster for Tunnel FETs and MOSFETs: An Experimental Study; IEEE Electron Device Letters. 2017. DOI : 10.1109/LED.2017.2734943.
M. M. Lopez; E. A. Casu; M. Fernandez-Bolanos; A. M. Ionescu : Low Impedance ALD HfO2 Partially-Filled-Gap Flexural and Bulk MEMS Resonators Piezoresistively Detected for Distributed Mass Sensing. 2017. p. 391. DOI : 10.3390/proceedings1040391.
M. d. l. C. Maqueda López / M. A. Ionescu; M. Fernandez-Bolanos Badia (Dir.) : Micromechanical resonators with sub-micron gaps filled with high-k dielectrics. Lausanne, EPFL, 2017. DOI : 10.5075/epfl-thesis-7938.
W. A. Vitale; E. A. Casu; A. Biswas; T. Rosca; C. Alper et al. : A Steep-Slope Transistor Combining Phase-Change and Band-to-Band-Tunneling to Achieve a sub-Unity Body Factor; Scientific Reports. 2017. DOI : 10.1038/s41598-017-00359-6.
C. Alper / M. A. Ionescu; P. Palestri (Dir.) : Modeling and optimization of Tunnel-FET architectures exploiting carrier gas dimensionality. Lausanne, EPFL, 2017. DOI : 10.5075/epfl-thesis-7587.
A. Biswas; G. V. Luong; M. F. Chowdhury; C. Alper; Q.-T. Zhao et al. : Benchmarking of Homojunction Strained-Si NW Tunnel FETs for Basic Analog Functions; IEEE Transactions on Electron Devices. 2017. DOI : 10.1109/TED.2017.2665527.
E. Casu; W. Vitale; N. Oliva; T. Rosca; A. Biswas et al. : Hybrid phase-change — Tunnel FET (PC-TFET) switch with subthreshold swing < 10mV/decade and sub-0.1 body factor: Digital and analog benchmarking. 2016. 2016 IEEE International Electron Devices Meeting (IEDM), San Francisco, CA, USA, 3-7 December 2016. p. 19.3.1-19.3.4. DOI : 10.1109/IEDM.2016.7838452.
C. F. Moldovan; W. A. Vitale; M. Tamagnone; J. R. Mosig; A. M. Ionescu : Graphene quantum capacitors for high-Q tunable LC-tanks for RF ICs. 2016. ESSDERC 2016 - 46th European Solid-State Device Research Conference, Lausanne, Switzerland, 12-15 September 2016. p. 345-348. DOI : 10.1109/ESSDERC.2016.7599657.
W. A. Vitale; M. Tamagnone; C. F. Moldovan; N. Emond; E. A. Casu et al. : Field-enhanced design of steep-slope VO2 switches for low actuation voltage. 2016. ESSDERC 2016 - 46th European Solid-State Device Research Conference, Lausanne, Switzerland, 12-15 September 2016. p. 352-355. DOI : 10.1109/ESSDERC.2016.7599659.
D. Cutaia / M. A. Ionescu; H. Riel (Dir.) : III-V Nanowire Hetero-junction Tunnel FETs integrated on Si. Lausanne, EPFL, 2016. DOI : 10.5075/epfl-thesis-7226.
J. L. Padilla; C. Alper; F. Gamiz; A. M. Ionescu : Quantum Mechanical Confinement in the Fin Electron-Hole Bilayer Tunnel Field-Effect Transistor; IEEE Transactions on Electron Devices. 2016. DOI : 10.1109/Ted.2016.2574893.
J. L. Padilla; C. Alper; F. Gamiz; A. M. Ionescu : Assessment of Confinement-Induced Band-to-Band Tunneling Leakage in the FinEHBTFET. 2016. 2nd Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon (EURSOI-ULIS), TU Wien, Inst Microelectron, Vienna, AUSTRIA, JAN 25-27, 2016. p. 20-23. DOI : 10.1109/ULIS.2016.7440042.
E. A. Garcia Cordero; H. M. Guérin; A. Muhech; F. Bellando; M. A. Ionescu : Ultra-Low Power Ion-Sensing Smart Platform for Noninvasive Healthcare Applications. 2016. Smart Systems Integration, Munich, Germany, March 9-10, 2016.
E. A. Garcia Cordero; H. M. Guérin; A. Muhech; F. Bellando; M. A. Ionescu : Heterogeneous Integration of Low Power pH FinFET sensors with Passive Capillary Microfluidics and miniaturized Ag/AgCl quasi-Reference Electrode. 2016. European Solid-State Device Research Conference (ESSDERC), Lausanne, Switzerland, September 12-15, 2016. p. 452-455.
M. Rupakula; W. A. Vitale : Sub-20nm gaps in HSQ for ultra-scaled nanoelectronic devices ; 42nd Micro Nano Engineering, Vienna, Austria, Septemeber 19-23,2016.
C. F. Moldovan; W. A. Vitale; P. Sharma; M. Tamagnone; J. R. Mosig et al. : Graphene Quantum Capacitors for High Frequency Tunable Analog Applications; Nano Letters. 2016. DOI : 10.1021/acs.nanolett.5b05235.
A. Saeidi; A. Biswas; A. M. Ionescu : Modeling and simulation of low power ferroelectric non-volatile memory tunnel field effect transistors using silicon-doped hafnium oxide as gate dielectric; Solid State Electronics. 2016. DOI : 10.1016/j.sse.2016.07.025.
A. Rusu; A. Saeidi; A. M. Ionescu : Condition for the negative capacitance effect in metal–ferroelectric–insulator–semiconductor devices; Nanotechnology. 2016. DOI : 10.1088/0957-4484/27/11/115201.
A. Biswas; S. Tomar; A. M. Ionescu : Vertical versus lateral tunneling FET non-volatile memory cell. 2016. 2016 IEEE Silicon Nanoelectronics Workshop (SNW), Honolulu, HI, USA, 12-13 June 2016. p. 42-43. DOI : 10.1109/SNW.2016.7577976.
A. Biswas; S. Tomar; A. M. Ionescu : Vertical band-to-band tunneling based non-volatile memory with high-K gate stack and stable hysteresis characteristics up to 400K. 2016. 2016 74th Annual Device Research Conference (DRC), Newark, DE, USA, 19-22 June 2016. p. 1-2. DOI : 10.1109/DRC.2016.7548493.
A. Saeidi; F. Jazaeri; I. Stolichnov; M. A. Ionescu : Double-Gate Negative-Capacitance MOSFET with PZT gate stack on Ultra-Thin Body SOI: an Experimentally Calibrated Simulation Study of Device Performance; IEEE Transactions on Electron Devices. 2016. DOI : 10.1109/Ted.2016.2616035.
M. M. Lopez; E. A. Casu; W. A. Vitale; A. M. Ionescu : Solid-gap resonators based on PVDF-TrFE. 2016. 2016 IEEE Silicon Nanoelectronics Workshop (SNW), Honolulu, HI, USA, 12-13 June 2016. p. 72-73. DOI : 10.1109/SNW.2016.7577990.
W. A. Vitale; C. F. Moldovan; A. Paone; A. Schuler; A. M. Ionescu : Investigation of the metal-insulator transition in VO2 for Electronic Switches with Sub-1mV/Decade Steep Subthreshold Slope. 2016. 2016 IEEE Silicon Nanoelectronics Workshop (SNW), Honolulu, HI, USA, 12-13 June 2016. p. 180-181. DOI : 10.1109/SNW.2016.7578041.
E. A. Casu; M. M. Lopez; W. A. Vitale; M. Fernandez-Bolanos; A. M. Ionescu : Design and fabrication of high-k filled sub-100 nm gap resonators with embedded dielectric field effect transistor for ultra high frequency applications. 2016. 2016 IEEE Silicon Nanoelectronics Workshop (SNW), Honolulu, HI, USA, 12-13 June 2016. p. 70-71. DOI : 10.1109/SNW.2016.7577989.
A. Biswas; N. Dagtekin; M. A. Ionescu ; Single field effect transistor capacitor-less memory device and method of operating the same. US9508854 ; US2015179800 . 2016.
H. Hasani; M. Tamagnone; S. Capdevila Cascante; C. F. Moldovan; P. Maoddi et al. : Tri-Band, Polarization-Independent Reflectarray at Terahertz Frequencies: Design, Fabrication, and Measurement; Ieee Transactions On Terahertz Science And Technology. 2016. DOI : 10.1109/Tthz.2016.2522301.
M. Tamagnone; C. Moldovan; J.-M. Poumirol; A. B. Kuzmenko; A. M. Ionescu et al. : Near optimal graphene terahertz non-reciprocal isolator; Nature Communications. 2016. DOI : 10.1038/ncomms11216.
J. L. Padilla; C. Alper; F. Gamiz; A. M. Ionescu : Switching Behavior Constraint in the Heterogate Electron–Hole Bilayer Tunnel FET: The Combined Interplay Between Quantum Confinement Effects and Asymmetric Configurations; IEEE Transactions on Electron Devices. 2016. DOI : 10.1109/TED.2016.2556083.
C. Alper; P. Palestri; J. L. Padilla; A. M. Ionescu : The Electron-Hole Bilayer TFET: Dimensionality Effects and Optimization; IEEE Transactions on Electron Devices. 2016. DOI : 10.1109/TED.2016.2557282.
C. F. Moldovan / M. A. Ionescu (Dir.) : Enabling High Frequency Reconfigurable Functions with Graphene. Lausanne, EPFL, 2016. DOI : 10.5075/epfl-thesis-6980.
J. L. Padilla; A. Palomares; C. Alper; F. Gamiz; A. M. Ionescu : Band-to-band tunneling distance analysis in the heterogate electron-hole bilayer tunnel field-effect transistor; Journal Of Applied Physics. 2016. DOI : 10.1063/1.4940741.
C. Alper; P. Palestri; J. L. Padilla; M. A. Ionescu : Underlap counterdoping as an efficient means to suppress lateral leakage in the electron–hole bilayer tunnel FET; Semiconductor Science and Technology. 2016. DOI : 10.1088/0268-1242/31/4/045001.
W. A. Vitale / M. A. Ionescu; C. Dehollain (Dir.) : Reconfigurable electronics based on metal-insulator transition. Lausanne, EPFL, 2016. DOI : 10.5075/epfl-thesis-6949.
W. A. Vitale; L. Petit; C. F. Moldovan; M. Fernández-Bolaños; A. Paone et al. : Electrothermal actuation of vanadium dioxide for tunable capacitors and microwave filters with integrated microheaters; Sensors & Actuators: A. Physical. 2016. DOI : 10.1016/j.sna.2016.01.027.
C. Alper; P. Palestri; J. L. Padilla; A. Gnudi; R. Grassi et al. : Efficient quantum mechanical simulation of band-to-band tunneling. 2015. 2015 Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon (EUROSOI-ULIS), Bologna, Italy, 26-28 January 2015. p. 141-144. DOI : 10.1109/ULIS.2015.7063793.
C. Alper; M. Visciarelli; P. Palestri; J. L. Padilla; A. Gnudi et al. : Modeling the imaginary branch in III-V tunneling devices: Effective mass vs k.p. 2015. 2015 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Washington DC, USA, 9-11 September 2015. p. 273-276. DOI : 10.1109/SISPAD.2015.7292312.
T. Hallam; C. F. Moldovan; K. Gajewski; A. M. Ionescu; G. S. Duesberg : Large area suspended graphene for nano-mechanical devices; Physica Status Solidi B-Basic Solid State Physics. 2015. DOI : 10.1002/pssb.201552269.
J. L. Padilla; C. Alper; F. Gamiz; A. M. Ionescu : Comment on 'Germanium electron-hole bilayer tunnel field-effect transistors with a symmetrically arranged double gate'; Semiconductor Science And Technology. 2015. DOI : 10.1088/0268-1242/30/12/128001.
P. Sharma / M. A. Ionescu (Dir.) : Graphene for Nanoelectronic Applications. Lausanne, EPFL, 2015. DOI : 10.5075/epfl-thesis-6886.
M. M. Lopez; M. F.-B. Badia; W. Vitale; A. M. Ionescu : Solid-gap wine-glass mode disks VB-FET resonators applied to biomass sensing; Microelectronic Engineering. 2015. DOI : 10.1016/j.mee.2015.03.005.
A. Biswas; L. De Michielis; A. Bazigos; A. M. Ionescu : Compact modeling of DG-Tunnel FET for Verilog-A implementation. 2015. ESSDERC 2015 - 45th European Solid-State Device Research Conference, Graz, Austria, 14-18 September 2015. p. 40-43. DOI : 10.1109/ESSDERC.2015.7324708.
A. Biswas; M. A. Ionescu : A capacitance-voltage model for DG-TFET. 2015. IEEE Silicon Nanoelectronics Workshop, Kyoto, Japan, 14-15 June 2015. p. 1-2.
N. Moridi / M. A. Ionescu; P. Shahgaldian (Dir.) : Reversible supramolecular modification of surfaces. Lausanne, EPFL, 2015. DOI : 10.5075/epfl-thesis-6861.
J. L. Padilla de la Torre; C. Alper; F. Gámiz; M. A. Ionescu : Comment on 'electron-hole bilayer tunnel field-effect transistors with a symmetrically arranged double gale'; Semiconductor Science and Technology. 2015. DOI : 10.1088/0268-1242/30/12/128001.
J. L. Padilla de la Torre; C. Alper; A. Godoy; F. Gámiz; M. A. Ionescu : Impact of Asymmetric Configurations on the Heterogate Germanium Electron-Hole Bilayer Tunnel Field-Effect Transistor Including Quantum Confinement; IEEE Transactions on Electron Devices. 2015. DOI : 10.1109/TED.2015.2476350.
A. Biswas / M. A. Ionescu (Dir.) : Tunnel Field Effect Transistors. Lausanne, EPFL, 2015. DOI : 10.5075/epfl-thesis-6802.
S. Rigante; P. Scarbolo; M. Wipf; R. L. Stoop; K. Bedner et al. : Sensing with Advanced Computing Technology: Fin Field-Effect Transistors with High-k Gate Stack on Bulk Silicon; ACS Nano. 2015. DOI : 10.1021/nn5064216.
P. Sharma; L. S. Bernard; A. Bazigos; A. Magrez; A. M. Ionescu : Graphene negative differential resistance (GNDR) circuit with enhanced performance at room temperature. 2015. Device Research Conference (DRC), 2015 73rd Annual, Columbus, OH, USA, June 21-24, 2015. p. 267 - 268. DOI : 10.1109/DRC.2015.7175676.
W. A. Vitale; C. F. Moldovan; M. Tamagnone; A. Paone; A. Schüler et al. : Steep-slope Metal-Insulator-Transition VO2 Switches with Temperature-Stable High ION; IEEE Electron Device Letters. 2015. DOI : 10.1109/LED.2015.2454535.
C. F. Moldovan; W. A. Vitale; P. Sharma; L. S. Bernard; A. M. Ionescu : Fabrication process and characterization of suspended graphene membranes for RF NEMS capacitive switches; Microelectronic Engineering. 2015. DOI : 10.1016/j.mee.2015.01.032.
W. A. Vitale; M. Fernández-Bolaños; A. Klumpp; J. Weber; P. Ramm et al. : Ultra Fine-Pitch TSV Technology for Ultra-Dense High-Q RF Inductors. 2015. 2015 Symposium on VLSI Technology, Kyoto, Japan, June 15-19, 2015.
W. A. Vitale; M. Fernández-Bolaños; C. F. Moldovan; A. Paone; A. Schüler et al. : Tunable Capacitors and Microwave Filters Based on Vanadium Dioxide Metal-Insulator Transition. 2015. 18th International Conference on Solid-State Sensors, Actuators and Microsystems Transducers 2015, Anchorage, Alaska, USA, June 21-25, 2015.
W. A. Vitale; C. F. Moldovan; A. Paone; A. Schüler; A. M. Ionescu : Fabrication of CMOS-compatible abrupt electronic switches based on vanadium dioxide; Microelectronic Engineering. 2015. DOI : 10.1016/j.mee.2015.03.055.
C. F. Moldovan; W. A. Vitale; M. Tamagnone; M. A. Ionescu : Graphene RF NEMS shunt switches for analog and digital phase shifters. 2015. Transducers Conference, Anchorage, Alaska, US, June, 21-25, 2015.
M. Tamagnone; S. Capdevila Cascante; H. Hasani; P. Romano; W. A. Vitale et al. : Performance evaluation of novel technologies for terahertz reflectarrays. 2015. 2015 Europaen Microwave Week, Paris, France, September, 6-11, 2015.
H. Hasani; M. Tamagnone; S. Capdevila Cascante; C. F. Moldovan; M. A. Ionescu et al. : Design, Fabrication and Characterization of Terahertz Reflectarrays Based on a Silicon Substrate. 2015. International Conference on Metamaterials, Photonic Crystals and Plasmonics, New York, US, August, 4-7, 2015.
M. Tamagnone; S. Capdevila Cascante; H. Hasani; C. F. Moldovan; M. A. Ionescu et al. : Evaluation of graphene for terahertz reflectarray antennas. 2015. Graphene Week 2015, Manchester, UK, June, 22-26, 2015.
J. L. Padilla de la Torre; C. Alper; C. Medina-Bailón; F. Gámiz; M. A. Ionescu : Assessment of Pseudo-Bilayer Structures in the Heterogate Germanium Electron-Hole Bilayer Tunnel Field-Effect Transistor; Applied Physics Letters. 2015. DOI : 10.1063/1.4923467.
P. Sharma; L. S. Bernard; A. Bazigos; A. Magrez; A. M. Ionescu : Graphene Negative Differential Resistance Circuit With Voltage-Tunable High Performance at Room Temperature; IEEE Electron Device Letters. 2015. DOI : 10.1109/LED.2015.2445858.
C. Alper; P. Palestri; L. Lattanzio; J. Padilla; A. Ionescu : Two dimensional quantum mechanical simulation of low dimensional tunneling devices; Solid-State Electronics. 2015. DOI : 10.1016/j.sse.2015.05.030.
W. A. Vitale; M. Fernández-Bolaños; R. Merkel; A. Enayati; I. Ocket et al. : Fine Pitch 3D-TSV Based High Frequency Components for RF MEMS Applications. 2015. IEEE Electronic Components and Technology Conference, San Diego, California, USA, May 26-29, 2015.
J. Cao; S. T. Bartsch; A. M. Ionescu : Wafer-Level Hysteresis-Free Resonant Carbon Nanotube Transistors; Acs Nano. 2015. DOI : 10.1021/nn506817y.
J. S. Gomez-Diaz; C. Moldovan; S. Capdevila Cascante; J. Romeu; L. S. Bernard et al. : Self-biased reconfigurable graphene stacks for terahertz plasmonics; Nature Communications. 2015. DOI : 10.1038/ncomms7334.
J. L. Padilla de la Torre; C. Alper; F. Gámiz; M. A. Ionescu : Response to Comment on Assessment of field-induced quantum confinement in heterogate germanium electron-hole bilayer tunnel field-effect transistor; Applied Physics Letters. 2015. DOI : 10.1063/1.4905866.
P. Sharma; L. S. Bernard; A. Bazigos; A. Magrez; M. A. Ionescu : Negative Differential Resistance in Top-Gated Chemical Vapor Deposition Grown Graphene Transistors. 2015. Graphene Conference, Bilbao, Spain, March 10-13, 2015.
N. Daǧtekın / M. A. Ionescu (Dir.) : Practical Applications of Tunnel Field Effect Transistors. Lausanne, EPFL, 2015. DOI : 10.5075/epfl-thesis-6333.
C. F. Moldovan; K. Gajewski; M. Tamagnone; R. S. Weatherup; H. Sugime et al. : Spatial Variability in Large Area Single and Few-layer CVD Graphene. 2015. Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon, Bologna, Italy, January 26-28, 2015.
H. Guerin; H. Le Poche; R. Pohle; E. Buitrago; M. F.-B. Badia et al. : Carbon nanotube gas sensor array for multiplex analyte discrimination; Sensors And Actuators B-Chemical. 2015. DOI : 10.1016/j.snb.2014.10.117.
P. Sharma; L. S. Bernard; A. Bazigos; A. Magrez; A. M. Ionescu : Room-Temperature Negative Differential Resistance in Graphene Field Effect Transistors: Experiments and Theory; ACS Nano. 2015. DOI : 10.1021/nn5059437.
W. A. Vitale; C. F. Moldovan; A. Paone; A. Schueler; A. M. Ionescu : CMOS-compatible abrupt switches based on VO2 metal-insulator transition. 2015. Ultimate Integration on Silicon, Bologna, Italy, January 26-28, 2015.
E. A. Casu; S. Rigante; M. Fernandez-Bolanos Badia; M. A. Ionescu : Single Crystal Silicon UHF Wine-Glass Ring Resonator with HfO2 Solid Dielectric Gap embedded in a Field Effect Transistor ; 40th Micro and Nano Engineering Conference, Lausanne, CH, September 22-26, 2014.
S. Bartsch; M. A. Ionescu ; Junctionless nano-electro-mechanical resonant transistor. US9397285 ; US2015137068 ; WO2013156978 ; WO2013156978 . 2014.
J. S. Gomez-Diaz; C. Moldova; S. Capdevilla; L. S. Bernard; J. Romeu et al. : Measurement of biased graphene stacks at terahertz: dynamic reconfiguration and hysteresis. 2014. 8th European Conference on Antennas and Propagation (EuCAP), The Hague, The Netherlands, April, 6-11, 2014.
S. Rigante; M. Wipf; A. Bazigos; K. Bedner; D. Bouvet et al. : Finfet With Fully Ph-Responsive Hfo2 As Highly Stable Biochemical Sensor. 2014. [27th IEEE International Conference on Micro Electro Mechanical Systems (MEMS)', u'27th IEEE International Conference on Micro Electro Mechanical Systems (MEMS)']. p. 1063-1066.
N. Dagtekin; A. M. Ionescu : Investigation of Partially Gated Si Tunnel FETs for Low Power Integrated Optical Sensing. 2014. 44th European Solid-State Device Research Conference (ESSDERC)', 44th European Solid-State Device Research Conference (ESSDERC)'. p. 190-193.
C. Alper; P. Palestri; L. Lattanzio; J. L. Padilla; A. M. Ionescu : Two Dimensional Quantum Mechanical Simulation of Low Dimensional Tunneling Devices. 2014. 44th European Solid-State Device Research Conference (ESSDERC), 44th European Solid-State Device Research Conference (ESSDERC)']. p. 186-189. DOI : 10.1109/ESSDERC.2014.6948791.
N. Dagtekin; A. M. Ionescu : Partially gated lateral tunnel field effect transistor for optical applications; Applied Physics Letters. 2014. DOI : 10.1063/1.4904026.
Infoscience
A. Saeidi; F. Jazaeri; I. Stlichnov; C. Enz; M. A. Ionescu : Design Considerations of Ferroelectric Properties for Negative Capacitance MOSFETs. 2018-03-13.
A. Saeidi; F. Jazaeri; I. Stolichnov; G. V. Luong; Q.-T. Zhao et al. : Effect of hysteretic and non-hysteretic negative capacitance on tunnel FETs DC performance. 2018-01-26. DOI : 10.1088/1361-6528/aaa590..
N. Oliva; E. A. Casu; C. Yan; A. Krammer; A. Magrez et al. : MoS2/VO2 vdW heterojunction devices: Tunable rectifiers, photodiodes and field effect transistors. 2018-01-25. IEDM, San Francisco, California, USA, December 2-6, 2017. DOI : 10.1109/IEDM.2017.8268503.
A. Ionescu : Two-Dimensional Materials Negative capacitance gives a positive boost; Nature Nanotechnology. 2018. DOI : 10.1038/s41565-017-0046-2.
M. Tamagnone; T. Slipchenko; C. Moldovan; P. Liu; A. Centeno et al. : Magnetoplasmonic enhancement of Faraday rotation in patterned graphene metasurfaces; PHYSICAL REVIEW B. 2018. DOI : 10.1103/PhysRevB.97.241410.
C. Convertino; C. Zota; H. Schmid; A. Ionescu; K. Moselund : III-V heterostructure tunnel field-effect transistor; JOURNAL OF PHYSICS-CONDENSED MATTER. 2018. DOI : 10.1088/1361-648X/aac5b4.
J. Padilla; C. Medina-Bailon; C. Alper; F. Gamiz; A. Ionescu : Confinement-induced InAs/GaSb heterojunction electron-hole bilayer tunneling field-effect transistor; APPLIED PHYSICS LETTERS. 2018. DOI : 10.1063/1.5012948.
A. Aziz; E. Breyer; A. Chen; X. Chen; S. Datta et al. : Computing with Ferroelectric FETs: Devices, Models, Systems, and Applications. 2018. Proceedings Of The 2018 Design, Automation & Test In Europe Conference & Exhibition (Date), Dresden, GERMANY, Mar 19-23, 2018. p. 1289-1298. DOI : 10.23919/DATE.2018.8342213.
J. Padilla; C. Medina-Bailon; C. Navarro; C. Alper; F. Gamiz et al. : Analysis of the Heterogate Electron-Hole Bilayer Tunneling Field-Effect Transistor With Partially Doped Channels: Effects on Tunneling Distance Modulation and Occupancy Probabilities; IEEE TRANSACTIONS ON ELECTRON DEVICES. 2018. DOI : 10.1109/TED.2017.2777666.
C. Alper; J. Padilla; P. Palestri; A. Ionescu : A Novel Reconfigurable Sub-0.25-V Digital Logic Family Using the Electron-Hole Bilayer TFET; IEEE JOURNAL OF THE ELECTRON DEVICES SOCIETY. 2018. DOI : 10.1109/JEDS.2017.2758018.
E. A. Garcia Cordero / M. A. Ionescu (Dir.) : Wearable System with Integrated Passive Microfluidics for Real-Time Electrolyte Sensing in Human Sweat. Lausanne, EPFL, 2018. DOI : 10.5075/epfl-thesis-8849.
E. A. Garcia Cordero; F. Wildhaber; F. Bellando; J. F. Longo; M. Fernandez-Bolanos Badia et al. : Embedded Passive Nano-Liter Micropump For Sweat Collection And Analysis. 2018. 31st IEEE International Conference on Micro Electro Mechanical Systems (MEMS), Belfast, NORTH IRELAND, Jan 21-25, 2018. p. 1217-1220.
E. A. Casu; A. A. Muller; M. Fernandez-Bolanos; A. Fumarola; A. Krammer et al. : Vanadium Oxide Bandstop Tunable Filter for Ka Frequency Bands Based on a Novel Reconfigurable Spiral Shape Defected Ground Plane CPW; IEEE Access. 2018. DOI : 10.1109/ACCESS.2018.2795463.
E. A. Casu; N. Oliva; M. Cavalieri; A. Muller; A. Fumarola et al. : Tunable RF phase shifters based on Vanadium Dioxide metal insulator transition; IEEE Journal of the Electron Devices Society. 2018. DOI : 10.1109/JEDS.2018.2837869.
E. A. Casu / M. A. Ionescu; M. Fernandez-Bolanos Badia (Dir.) : Novel Digital and Radio Frequency Electronic Functions Enabled by Steep-Slope Phase-Change Devices. Lausanne, EPFL, 2018. DOI : 10.5075/epfl-thesis-8596.
F. Bellando; E. A. Garcia Cordero; F. Wildhaber; J. F. Longo; H. M. Guérin et al. : Lab On Skin: 3D Monolitically Integrated Zero-Energy Micro/Nanofluidics and FD SOI Ion Sensitive FETs for Wearable Multi-Sensing Sweat Applications. 2017. 63rd International Electron Device Meeting, San Francisco, California, USA.
N. Oliva; E. A. Casu; C. Yan; A. Krammer; T. Rosca et al. : Van der Waals MoS2/VO2 heterostructure junction with tunable rectifier behavior and efficient photoresponse; Scientific reports. 2017. DOI : 10.1038/s41598-017-12950-y.
M. M. Lopez; E. A. Casu; A. M. Ionescu; M. Fernandez-Bolanos : Lowering motional resistance by partially HfO2 gap filling in double-ended tuning fork MEMS resonators.. 2017. 2017 Joint Conference of the European Frequency and Time Forum and IEEE International Frequency Control Symposium ((EFTF/IFC), BESANÇON, France, 9-13 July 2017. p. 805-806. DOI : 10.1109/FCS.2017.8089040.
N. Oliva; E. A. Casu; W. A. Vitale; I. Stolichnov; M. A. Ionescu : Complementary black phosphorous FETs by workfunction engineering of pre-patterned Au and Ag embedded electrodes. 2017. Solid-State Device Research Conference (ESSDERC), 2017 47th European, September, 11-14, 2017. DOI : 10.1109/ESSDERC.2017.8066602.
E. A. Casu; W. A. Vitale; M. Tamagnone; M. M. Lopez; N. Oliva et al. : Shunt capacitive switches based on VO2 metal insulator transition for RF phase shifter applications. 2017. ESSDERC 2017 - 47th IEEE European Solid-State Device Research Conference (ESSDERC), Leuven, Belgium, 11-14 September 2017. p. 232-235. DOI : 10.1109/ESSDERC.2017.8066634.
A. Saeidi; F. Jazaeri; F. Bellando; I. Stolichnov; C. Enz et al. : Negative Capacitance Field Effect Transistors; Capacitance Matching and non-Hysteretic Operation. 2017. Solid-State Device Research Conference (ESSDERC), 2017 47th European, Leuven, Belgium, 11-14 Sept. 2017. DOI : 10.1109/ESSDERC.2017.8066596.
A. Saeidi; F. Jazaeri; I. Stolichnov; G. V. Luong; Q.-T. Zhao et al. : Negative Capacitance Tunnel FETs: Experimental Demonstration of Outstanding Simultaneous Boosting of On-current, Transconductance, Overdrive, and Swing. 2017. Silicon Nanoelectronic Workshop, Kyoto, Japan, June 4-5, 2017.
A. Saeidi; F. Jazaeri; I. Stolichnov; G. V. Luong; Q.-T. Zhao et al. : Negative Capacitance Tunnel FETs: Experimental Demonstration of Outstanding Simultaneous Boosting of On-current, Transconductance, Overdrive, and Swing ; Silicon Nanoelectronic Workshop, Kyoto, Japan, June 4-5, 2017.
A. Saeidi; F. Jazaeri; F. Bellando; I. Stolichnov; G. V. Luong et al. : Negative Capacitance as Performance Booster for Tunnel FETs and MOSFETs: An Experimental Study; IEEE Electron Device Letters. 2017. DOI : 10.1109/LED.2017.2734943.
M. M. Lopez; E. A. Casu; M. Fernandez-Bolanos; A. M. Ionescu : Low Impedance ALD HfO2 Partially-Filled-Gap Flexural and Bulk MEMS Resonators Piezoresistively Detected for Distributed Mass Sensing. 2017. p. 391. DOI : 10.3390/proceedings1040391.
M. d. l. C. Maqueda López / M. A. Ionescu; M. Fernandez-Bolanos Badia (Dir.) : Micromechanical resonators with sub-micron gaps filled with high-k dielectrics. Lausanne, EPFL, 2017. DOI : 10.5075/epfl-thesis-7938.
W. A. Vitale; E. A. Casu; A. Biswas; T. Rosca; C. Alper et al. : A Steep-Slope Transistor Combining Phase-Change and Band-to-Band-Tunneling to Achieve a sub-Unity Body Factor; Scientific Reports. 2017. DOI : 10.1038/s41598-017-00359-6.
C. Alper / M. A. Ionescu; P. Palestri (Dir.) : Modeling and optimization of Tunnel-FET architectures exploiting carrier gas dimensionality. Lausanne, EPFL, 2017. DOI : 10.5075/epfl-thesis-7587.
A. Biswas; G. V. Luong; M. F. Chowdhury; C. Alper; Q.-T. Zhao et al. : Benchmarking of Homojunction Strained-Si NW Tunnel FETs for Basic Analog Functions; IEEE Transactions on Electron Devices. 2017. DOI : 10.1109/TED.2017.2665527.
E. Casu; W. Vitale; N. Oliva; T. Rosca; A. Biswas et al. : Hybrid phase-change — Tunnel FET (PC-TFET) switch with subthreshold swing < 10mV/decade and sub-0.1 body factor: Digital and analog benchmarking. 2016. 2016 IEEE International Electron Devices Meeting (IEDM), San Francisco, CA, USA, 3-7 December 2016. p. 19.3.1-19.3.4. DOI : 10.1109/IEDM.2016.7838452.
C. F. Moldovan; W. A. Vitale; M. Tamagnone; J. R. Mosig; A. M. Ionescu : Graphene quantum capacitors for high-Q tunable LC-tanks for RF ICs. 2016. ESSDERC 2016 - 46th European Solid-State Device Research Conference, Lausanne, Switzerland, 12-15 September 2016. p. 345-348. DOI : 10.1109/ESSDERC.2016.7599657.
W. A. Vitale; M. Tamagnone; C. F. Moldovan; N. Emond; E. A. Casu et al. : Field-enhanced design of steep-slope VO2 switches for low actuation voltage. 2016. ESSDERC 2016 - 46th European Solid-State Device Research Conference, Lausanne, Switzerland, 12-15 September 2016. p. 352-355. DOI : 10.1109/ESSDERC.2016.7599659.
D. Cutaia / M. A. Ionescu; H. Riel (Dir.) : III-V Nanowire Hetero-junction Tunnel FETs integrated on Si. Lausanne, EPFL, 2016. DOI : 10.5075/epfl-thesis-7226.
J. L. Padilla; C. Alper; F. Gamiz; A. M. Ionescu : Quantum Mechanical Confinement in the Fin Electron-Hole Bilayer Tunnel Field-Effect Transistor; IEEE Transactions on Electron Devices. 2016. DOI : 10.1109/Ted.2016.2574893.
J. L. Padilla; C. Alper; F. Gamiz; A. M. Ionescu : Assessment of Confinement-Induced Band-to-Band Tunneling Leakage in the FinEHBTFET. 2016. 2nd Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon (EURSOI-ULIS), TU Wien, Inst Microelectron, Vienna, AUSTRIA, JAN 25-27, 2016. p. 20-23. DOI : 10.1109/ULIS.2016.7440042.
E. A. Garcia Cordero; H. M. Guérin; A. Muhech; F. Bellando; M. A. Ionescu : Ultra-Low Power Ion-Sensing Smart Platform for Noninvasive Healthcare Applications. 2016. Smart Systems Integration, Munich, Germany, March 9-10, 2016.
E. A. Garcia Cordero; H. M. Guérin; A. Muhech; F. Bellando; M. A. Ionescu : Heterogeneous Integration of Low Power pH FinFET sensors with Passive Capillary Microfluidics and miniaturized Ag/AgCl quasi-Reference Electrode. 2016. European Solid-State Device Research Conference (ESSDERC), Lausanne, Switzerland, September 12-15, 2016. p. 452-455.
M. Rupakula; W. A. Vitale : Sub-20nm gaps in HSQ for ultra-scaled nanoelectronic devices ; 42nd Micro Nano Engineering, Vienna, Austria, Septemeber 19-23,2016.
C. F. Moldovan; W. A. Vitale; P. Sharma; M. Tamagnone; J. R. Mosig et al. : Graphene Quantum Capacitors for High Frequency Tunable Analog Applications; Nano Letters. 2016. DOI : 10.1021/acs.nanolett.5b05235.
A. Saeidi; A. Biswas; A. M. Ionescu : Modeling and simulation of low power ferroelectric non-volatile memory tunnel field effect transistors using silicon-doped hafnium oxide as gate dielectric; Solid State Electronics. 2016. DOI : 10.1016/j.sse.2016.07.025.
A. Rusu; A. Saeidi; A. M. Ionescu : Condition for the negative capacitance effect in metal–ferroelectric–insulator–semiconductor devices; Nanotechnology. 2016. DOI : 10.1088/0957-4484/27/11/115201.
A. Biswas; S. Tomar; A. M. Ionescu : Vertical versus lateral tunneling FET non-volatile memory cell. 2016. 2016 IEEE Silicon Nanoelectronics Workshop (SNW), Honolulu, HI, USA, 12-13 June 2016. p. 42-43. DOI : 10.1109/SNW.2016.7577976.
A. Biswas; S. Tomar; A. M. Ionescu : Vertical band-to-band tunneling based non-volatile memory with high-K gate stack and stable hysteresis characteristics up to 400K. 2016. 2016 74th Annual Device Research Conference (DRC), Newark, DE, USA, 19-22 June 2016. p. 1-2. DOI : 10.1109/DRC.2016.7548493.
A. Saeidi; F. Jazaeri; I. Stolichnov; M. A. Ionescu : Double-Gate Negative-Capacitance MOSFET with PZT gate stack on Ultra-Thin Body SOI: an Experimentally Calibrated Simulation Study of Device Performance; IEEE Transactions on Electron Devices. 2016. DOI : 10.1109/Ted.2016.2616035.
M. M. Lopez; E. A. Casu; W. A. Vitale; A. M. Ionescu : Solid-gap resonators based on PVDF-TrFE. 2016. 2016 IEEE Silicon Nanoelectronics Workshop (SNW), Honolulu, HI, USA, 12-13 June 2016. p. 72-73. DOI : 10.1109/SNW.2016.7577990.
W. A. Vitale; C. F. Moldovan; A. Paone; A. Schuler; A. M. Ionescu : Investigation of the metal-insulator transition in VO2 for Electronic Switches with Sub-1mV/Decade Steep Subthreshold Slope. 2016. 2016 IEEE Silicon Nanoelectronics Workshop (SNW), Honolulu, HI, USA, 12-13 June 2016. p. 180-181. DOI : 10.1109/SNW.2016.7578041.
E. A. Casu; M. M. Lopez; W. A. Vitale; M. Fernandez-Bolanos; A. M. Ionescu : Design and fabrication of high-k filled sub-100 nm gap resonators with embedded dielectric field effect transistor for ultra high frequency applications. 2016. 2016 IEEE Silicon Nanoelectronics Workshop (SNW), Honolulu, HI, USA, 12-13 June 2016. p. 70-71. DOI : 10.1109/SNW.2016.7577989.
A. Biswas; N. Dagtekin; M. A. Ionescu ; Single field effect transistor capacitor-less memory device and method of operating the same. US9508854 ; US2015179800 . 2016.
H. Hasani; M. Tamagnone; S. Capdevila Cascante; C. F. Moldovan; P. Maoddi et al. : Tri-Band, Polarization-Independent Reflectarray at Terahertz Frequencies: Design, Fabrication, and Measurement; Ieee Transactions On Terahertz Science And Technology. 2016. DOI : 10.1109/Tthz.2016.2522301.
M. Tamagnone; C. Moldovan; J.-M. Poumirol; A. B. Kuzmenko; A. M. Ionescu et al. : Near optimal graphene terahertz non-reciprocal isolator; Nature Communications. 2016. DOI : 10.1038/ncomms11216.
J. L. Padilla; C. Alper; F. Gamiz; A. M. Ionescu : Switching Behavior Constraint in the Heterogate Electron–Hole Bilayer Tunnel FET: The Combined Interplay Between Quantum Confinement Effects and Asymmetric Configurations; IEEE Transactions on Electron Devices. 2016. DOI : 10.1109/TED.2016.2556083.
C. Alper; P. Palestri; J. L. Padilla; A. M. Ionescu : The Electron-Hole Bilayer TFET: Dimensionality Effects and Optimization; IEEE Transactions on Electron Devices. 2016. DOI : 10.1109/TED.2016.2557282.
C. F. Moldovan / M. A. Ionescu (Dir.) : Enabling High Frequency Reconfigurable Functions with Graphene. Lausanne, EPFL, 2016. DOI : 10.5075/epfl-thesis-6980.
J. L. Padilla; A. Palomares; C. Alper; F. Gamiz; A. M. Ionescu : Band-to-band tunneling distance analysis in the heterogate electron-hole bilayer tunnel field-effect transistor; Journal Of Applied Physics. 2016. DOI : 10.1063/1.4940741.
C. Alper; P. Palestri; J. L. Padilla; M. A. Ionescu : Underlap counterdoping as an efficient means to suppress lateral leakage in the electron–hole bilayer tunnel FET; Semiconductor Science and Technology. 2016. DOI : 10.1088/0268-1242/31/4/045001.
W. A. Vitale / M. A. Ionescu; C. Dehollain (Dir.) : Reconfigurable electronics based on metal-insulator transition. Lausanne, EPFL, 2016. DOI : 10.5075/epfl-thesis-6949.
W. A. Vitale; L. Petit; C. F. Moldovan; M. Fernández-Bolaños; A. Paone et al. : Electrothermal actuation of vanadium dioxide for tunable capacitors and microwave filters with integrated microheaters; Sensors & Actuators: A. Physical. 2016. DOI : 10.1016/j.sna.2016.01.027.
C. Alper; P. Palestri; J. L. Padilla; A. Gnudi; R. Grassi et al. : Efficient quantum mechanical simulation of band-to-band tunneling. 2015. 2015 Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon (EUROSOI-ULIS), Bologna, Italy, 26-28 January 2015. p. 141-144. DOI : 10.1109/ULIS.2015.7063793.
C. Alper; M. Visciarelli; P. Palestri; J. L. Padilla; A. Gnudi et al. : Modeling the imaginary branch in III-V tunneling devices: Effective mass vs k.p. 2015. 2015 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Washington DC, USA, 9-11 September 2015. p. 273-276. DOI : 10.1109/SISPAD.2015.7292312.
T. Hallam; C. F. Moldovan; K. Gajewski; A. M. Ionescu; G. S. Duesberg : Large area suspended graphene for nano-mechanical devices; Physica Status Solidi B-Basic Solid State Physics. 2015. DOI : 10.1002/pssb.201552269.
J. L. Padilla; C. Alper; F. Gamiz; A. M. Ionescu : Comment on 'Germanium electron-hole bilayer tunnel field-effect transistors with a symmetrically arranged double gate'; Semiconductor Science And Technology. 2015. DOI : 10.1088/0268-1242/30/12/128001.
P. Sharma / M. A. Ionescu (Dir.) : Graphene for Nanoelectronic Applications. Lausanne, EPFL, 2015. DOI : 10.5075/epfl-thesis-6886.
M. M. Lopez; M. F.-B. Badia; W. Vitale; A. M. Ionescu : Solid-gap wine-glass mode disks VB-FET resonators applied to biomass sensing; Microelectronic Engineering. 2015. DOI : 10.1016/j.mee.2015.03.005.
A. Biswas; L. De Michielis; A. Bazigos; A. M. Ionescu : Compact modeling of DG-Tunnel FET for Verilog-A implementation. 2015. ESSDERC 2015 - 45th European Solid-State Device Research Conference, Graz, Austria, 14-18 September 2015. p. 40-43. DOI : 10.1109/ESSDERC.2015.7324708.
A. Biswas; M. A. Ionescu : A capacitance-voltage model for DG-TFET. 2015. IEEE Silicon Nanoelectronics Workshop, Kyoto, Japan, 14-15 June 2015. p. 1-2.
N. Moridi / M. A. Ionescu; P. Shahgaldian (Dir.) : Reversible supramolecular modification of surfaces. Lausanne, EPFL, 2015. DOI : 10.5075/epfl-thesis-6861.
J. L. Padilla de la Torre; C. Alper; F. Gámiz; M. A. Ionescu : Comment on 'electron-hole bilayer tunnel field-effect transistors with a symmetrically arranged double gale'; Semiconductor Science and Technology. 2015. DOI : 10.1088/0268-1242/30/12/128001.
J. L. Padilla de la Torre; C. Alper; A. Godoy; F. Gámiz; M. A. Ionescu : Impact of Asymmetric Configurations on the Heterogate Germanium Electron-Hole Bilayer Tunnel Field-Effect Transistor Including Quantum Confinement; IEEE Transactions on Electron Devices. 2015. DOI : 10.1109/TED.2015.2476350.
A. Biswas / M. A. Ionescu (Dir.) : Tunnel Field Effect Transistors. Lausanne, EPFL, 2015. DOI : 10.5075/epfl-thesis-6802.
S. Rigante; P. Scarbolo; M. Wipf; R. L. Stoop; K. Bedner et al. : Sensing with Advanced Computing Technology: Fin Field-Effect Transistors with High-k Gate Stack on Bulk Silicon; ACS Nano. 2015. DOI : 10.1021/nn5064216.
P. Sharma; L. S. Bernard; A. Bazigos; A. Magrez; A. M. Ionescu : Graphene negative differential resistance (GNDR) circuit with enhanced performance at room temperature. 2015. Device Research Conference (DRC), 2015 73rd Annual, Columbus, OH, USA, June 21-24, 2015. p. 267 - 268. DOI : 10.1109/DRC.2015.7175676.
W. A. Vitale; C. F. Moldovan; M. Tamagnone; A. Paone; A. Schüler et al. : Steep-slope Metal-Insulator-Transition VO2 Switches with Temperature-Stable High ION; IEEE Electron Device Letters. 2015. DOI : 10.1109/LED.2015.2454535.
C. F. Moldovan; W. A. Vitale; P. Sharma; L. S. Bernard; A. M. Ionescu : Fabrication process and characterization of suspended graphene membranes for RF NEMS capacitive switches; Microelectronic Engineering. 2015. DOI : 10.1016/j.mee.2015.01.032.
W. A. Vitale; M. Fernández-Bolaños; A. Klumpp; J. Weber; P. Ramm et al. : Ultra Fine-Pitch TSV Technology for Ultra-Dense High-Q RF Inductors. 2015. 2015 Symposium on VLSI Technology, Kyoto, Japan, June 15-19, 2015.
W. A. Vitale; M. Fernández-Bolaños; C. F. Moldovan; A. Paone; A. Schüler et al. : Tunable Capacitors and Microwave Filters Based on Vanadium Dioxide Metal-Insulator Transition. 2015. 18th International Conference on Solid-State Sensors, Actuators and Microsystems Transducers 2015, Anchorage, Alaska, USA, June 21-25, 2015.
W. A. Vitale; C. F. Moldovan; A. Paone; A. Schüler; A. M. Ionescu : Fabrication of CMOS-compatible abrupt electronic switches based on vanadium dioxide; Microelectronic Engineering. 2015. DOI : 10.1016/j.mee.2015.03.055.
C. F. Moldovan; W. A. Vitale; M. Tamagnone; M. A. Ionescu : Graphene RF NEMS shunt switches for analog and digital phase shifters. 2015. Transducers Conference, Anchorage, Alaska, US, June, 21-25, 2015.
M. Tamagnone; S. Capdevila Cascante; H. Hasani; P. Romano; W. A. Vitale et al. : Performance evaluation of novel technologies for terahertz reflectarrays. 2015. 2015 Europaen Microwave Week, Paris, France, September, 6-11, 2015.
H. Hasani; M. Tamagnone; S. Capdevila Cascante; C. F. Moldovan; M. A. Ionescu et al. : Design, Fabrication and Characterization of Terahertz Reflectarrays Based on a Silicon Substrate. 2015. International Conference on Metamaterials, Photonic Crystals and Plasmonics, New York, US, August, 4-7, 2015.
M. Tamagnone; S. Capdevila Cascante; H. Hasani; C. F. Moldovan; M. A. Ionescu et al. : Evaluation of graphene for terahertz reflectarray antennas. 2015. Graphene Week 2015, Manchester, UK, June, 22-26, 2015.
J. L. Padilla de la Torre; C. Alper; C. Medina-Bailón; F. Gámiz; M. A. Ionescu : Assessment of Pseudo-Bilayer Structures in the Heterogate Germanium Electron-Hole Bilayer Tunnel Field-Effect Transistor; Applied Physics Letters. 2015. DOI : 10.1063/1.4923467.
P. Sharma; L. S. Bernard; A. Bazigos; A. Magrez; A. M. Ionescu : Graphene Negative Differential Resistance Circuit With Voltage-Tunable High Performance at Room Temperature; IEEE Electron Device Letters. 2015. DOI : 10.1109/LED.2015.2445858.
C. Alper; P. Palestri; L. Lattanzio; J. Padilla; A. Ionescu : Two dimensional quantum mechanical simulation of low dimensional tunneling devices; Solid-State Electronics. 2015. DOI : 10.1016/j.sse.2015.05.030.
W. A. Vitale; M. Fernández-Bolaños; R. Merkel; A. Enayati; I. Ocket et al. : Fine Pitch 3D-TSV Based High Frequency Components for RF MEMS Applications. 2015. IEEE Electronic Components and Technology Conference, San Diego, California, USA, May 26-29, 2015.
J. Cao; S. T. Bartsch; A. M. Ionescu : Wafer-Level Hysteresis-Free Resonant Carbon Nanotube Transistors; Acs Nano. 2015. DOI : 10.1021/nn506817y.
J. S. Gomez-Diaz; C. Moldovan; S. Capdevila Cascante; J. Romeu; L. S. Bernard et al. : Self-biased reconfigurable graphene stacks for terahertz plasmonics; Nature Communications. 2015. DOI : 10.1038/ncomms7334.
J. L. Padilla de la Torre; C. Alper; F. Gámiz; M. A. Ionescu : Response to Comment on Assessment of field-induced quantum confinement in heterogate germanium electron-hole bilayer tunnel field-effect transistor; Applied Physics Letters. 2015. DOI : 10.1063/1.4905866.
P. Sharma; L. S. Bernard; A. Bazigos; A. Magrez; M. A. Ionescu : Negative Differential Resistance in Top-Gated Chemical Vapor Deposition Grown Graphene Transistors. 2015. Graphene Conference, Bilbao, Spain, March 10-13, 2015.
N. Daǧtekın / M. A. Ionescu (Dir.) : Practical Applications of Tunnel Field Effect Transistors. Lausanne, EPFL, 2015. DOI : 10.5075/epfl-thesis-6333.
C. F. Moldovan; K. Gajewski; M. Tamagnone; R. S. Weatherup; H. Sugime et al. : Spatial Variability in Large Area Single and Few-layer CVD Graphene. 2015. Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon, Bologna, Italy, January 26-28, 2015.
H. Guerin; H. Le Poche; R. Pohle; E. Buitrago; M. F.-B. Badia et al. : Carbon nanotube gas sensor array for multiplex analyte discrimination; Sensors And Actuators B-Chemical. 2015. DOI : 10.1016/j.snb.2014.10.117.
P. Sharma; L. S. Bernard; A. Bazigos; A. Magrez; A. M. Ionescu : Room-Temperature Negative Differential Resistance in Graphene Field Effect Transistors: Experiments and Theory; ACS Nano. 2015. DOI : 10.1021/nn5059437.
W. A. Vitale; C. F. Moldovan; A. Paone; A. Schueler; A. M. Ionescu : CMOS-compatible abrupt switches based on VO2 metal-insulator transition. 2015. Ultimate Integration on Silicon, Bologna, Italy, January 26-28, 2015.
E. A. Casu; S. Rigante; M. Fernandez-Bolanos Badia; M. A. Ionescu : Single Crystal Silicon UHF Wine-Glass Ring Resonator with HfO2 Solid Dielectric Gap embedded in a Field Effect Transistor ; 40th Micro and Nano Engineering Conference, Lausanne, CH, September 22-26, 2014.
S. Bartsch; M. A. Ionescu ; Junctionless nano-electro-mechanical resonant transistor. US9397285 ; US2015137068 ; WO2013156978 ; WO2013156978 . 2014.
J. S. Gomez-Diaz; C. Moldova; S. Capdevilla; L. S. Bernard; J. Romeu et al. : Measurement of biased graphene stacks at terahertz: dynamic reconfiguration and hysteresis. 2014. 8th European Conference on Antennas and Propagation (EuCAP), The Hague, The Netherlands, April, 6-11, 2014.
S. Rigante; M. Wipf; A. Bazigos; K. Bedner; D. Bouvet et al. : Finfet With Fully Ph-Responsive Hfo2 As Highly Stable Biochemical Sensor. 2014. [27th IEEE International Conference on Micro Electro Mechanical Systems (MEMS)', u'27th IEEE International Conference on Micro Electro Mechanical Systems (MEMS)']. p. 1063-1066.
N. Dagtekin; A. M. Ionescu : Investigation of Partially Gated Si Tunnel FETs for Low Power Integrated Optical Sensing. 2014. 44th European Solid-State Device Research Conference (ESSDERC)', 44th European Solid-State Device Research Conference (ESSDERC)'. p. 190-193.
C. Alper; P. Palestri; L. Lattanzio; J. L. Padilla; A. M. Ionescu : Two Dimensional Quantum Mechanical Simulation of Low Dimensional Tunneling Devices. 2014. 44th European Solid-State Device Research Conference (ESSDERC), 44th European Solid-State Device Research Conference (ESSDERC)']. p. 186-189. DOI : 10.1109/ESSDERC.2014.6948791.
N. Dagtekin; A. M. Ionescu : Partially gated lateral tunnel field effect transistor for optical applications; Applied Physics Letters. 2014. DOI : 10.1063/1.4904026.
Enseignement & Phd
Enseignement
- Electrical and Electronics Engineering,
Programmes doctoraux
- Doctoral Program in Microsystems and Microelectronics
- Doctoral Program in Electrical Engineering
Doctorants
Bellando Francesco
Capua Luca
Convertino Clarissa
Corti Elisabetta
Gastaldi Carlotta
Kamaei Bahmaei Sadegh
Oliva Nicolò
Qaderi Rahaqi Fatemeh
Rosca Teodor
Rupakula Maneesha
Saeidi Ali
Zhang Junrui
Acquaviva Donatello ...
Alper Cem ...
Anghel Costin ...
Arun Anupama ...
Bartsch Sebastian Thimotee ...
Bhandari Jyotshna ...
Biswas Arnab ...
Bopp Matthieu ...
Boucart Katherine ...
Buitrago Godinez Elizabeth ...
Cao Ji ...
Casu Emanuele Andrea ...
Chauhan Yogesh Singh ...
Ciressan Nicoleta-Diana ...
Cutaia Davide ...
Cvetkovic Nenad ...
Dagtekin Nilay ...
De Michielis Luca ...
Ecoffey Serge ...
Fernandez-Bolanos Badia Montserrat ...
Fritschi Raphaël ...
Garcia Cordero Erick Antonio ...
Ghoneim Hesham ...
Grogg Daniel ...
Guérin Hoël Maxime ...
Hefyene Nasser ...
Hermersdorf Marion ...
Lattanzio Livio ...
Mahapatra Santanu ...
Maqueda López Mariazel de la Candelas ...
Mehdaoui Alexander ...
Moldovan Clara-Fausta ...
Moridi Negar ...
Moselund Kirsten Emilie ...
Najmzadeh Mohammad ...
Pisani Marcelo Bento ...
Pott Vincent ...
Rigante Sara ...
Rusu Alexandru ...
Salvatore Giovanni Antonio ...
Sharma Pankaj ...
Tamagnone Michele ...
Vitale Wolfgang Amadeus ...
Capua Luca
Convertino Clarissa
Corti Elisabetta
Gastaldi Carlotta
Kamaei Bahmaei Sadegh
Oliva Nicolò
Qaderi Rahaqi Fatemeh
Rosca Teodor
Rupakula Maneesha
Saeidi Ali
Zhang Junrui
A dirigé les thèses de
Abelé Nicolas ...Acquaviva Donatello ...
Alper Cem ...
Anghel Costin ...
Arun Anupama ...
Bartsch Sebastian Thimotee ...
Bhandari Jyotshna ...
Biswas Arnab ...
Bopp Matthieu ...
Boucart Katherine ...
Buitrago Godinez Elizabeth ...
Cao Ji ...
Casu Emanuele Andrea ...
Chauhan Yogesh Singh ...
Ciressan Nicoleta-Diana ...
Cutaia Davide ...
Cvetkovic Nenad ...
Dagtekin Nilay ...
De Michielis Luca ...
Ecoffey Serge ...
Fernandez-Bolanos Badia Montserrat ...
Fritschi Raphaël ...
Garcia Cordero Erick Antonio ...
Ghoneim Hesham ...
Grogg Daniel ...
Guérin Hoël Maxime ...
Hefyene Nasser ...
Hermersdorf Marion ...
Lattanzio Livio ...
Mahapatra Santanu ...
Maqueda López Mariazel de la Candelas ...
Mehdaoui Alexander ...
Moldovan Clara-Fausta ...
Moridi Negar ...
Moselund Kirsten Emilie ...
Najmzadeh Mohammad ...
Pisani Marcelo Bento ...
Pott Vincent ...
Rigante Sara ...
Rusu Alexandru ...
Salvatore Giovanni Antonio ...
Sharma Pankaj ...
Tamagnone Michele ...
Vitale Wolfgang Amadeus ...
Cours
Dispositifs micro- nanoélectroniques
Ce cours est une introduction aux principes physiques des composants à semiconducteurs (transistors bipolaires, MOSFET et autres) et à leur modèlisation. Les performances électriques (digitales et analogiques) et leur implémentation technologique sont dis... 
Nanoelectronics
Ce cours présente les tendances actuelles en technologie et dispositifs nanoélectroniques en termes de réduction des dimensions, meilleures performances, nouvelles fonctionalités et ultra-basse consommation. Les défis des nouveaux nanocomposants pour pous...
Nanoscale MOSFETs and beyond CMOS devices
(1) Nanoscale CMOS technologies, technology boosters and potential showstoppers
(2) Phenomena specific to deep submicron devices:
- non-stationary phenomena (velocity overshoot)
- ballistic transport
- quan...
RF MEMS for communications applications
- RF MEMS switches: capacitive, contact, technology, electromechanical and RF design and mod-elling, figures of merit, reliability and advanced packaging.
- RF MEMS passives for reconfigurable and/or tunable transceiver/receiver ar...
Semiconductor devices II
Wearables and implantables for personalized and preventive healthcare
- RF MEMS switches: capacitive, contact, technology, electromechanical and RF design and mod-elling, figures of merit, reliability and advanced packaging.