Aïcha Hessler-Wyser

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Maître d'enseignement et de recherche

aicha.hessler@epfl.ch +41 21 693 48 30

Nationalité : CH

EPFL STI IMT PV-LAB
MC A2 305 (Bâtiment MC)
Rue de la Maladière 71b, CP 526
CH-2002 Neuchâtel 2

Unité: SMX-ENS

Unité: EDMX-ENS

Site web: http://ae.epfl.ch/
Unité: AE

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Données administratives

Compétences

TEM, SEM
Photovoltaics
Science des matériaux (métallurgie, matériaux pour l'énergie)

Publications

Infoscience

Autres publications

Jeangros, Q Hansen, T.W. Wagner, J.B, Dunin-Borkowski, R.E. H�bert, C. Van herle, J Hessler-Wyser, A
Acta Materialia, Vol 67 (2014), 362-372
Oxidation mechanism of nickel particles studied in an environmental transmission electron microscope
Pasche, G SCheel, M Sch�ublin, R H�bert, C. Rappaz, M Hessler-Wyser, A
Metallurgical and Materials Transactions A: Physical Metallurgy and Materials Science 44(9):(2013) 4119-4123
Time-resolved X-ray microtomography observation of inter metallic formation between solid Fe and liquid Al
Schuler, A Wuillemin, Z Hessler-Wyser, A Comminges, C Steriner, N. Y Van herle, J
Journal of Power Sources, Vol 211 (2012) 177-183
Cr-poisoning in (La,Sr)(Co, Fe)O3 cathodes after 10'000h SOFC stack testing
Vannod, J Bornert, M Bidaux, J-E Bataillard, L Karimi, A Drezet, J-M Rappaz, M Hessler-Wyser, A
Acta Materialia, Vol 59, 17 (2011) 6538-6546
Mechanical and microstructural integrity of nickel-titanium and stainless steel laser joined wires
Cusanelli, G., R. Fl�kiger, A. Hessler-Wyser, F. Bobard, R. Demellayer, and R. Perez
Journal of Materials Processing Technology, 2004. 149(1-3): p. 289-295
Microstructure at submicron scale of the white layer produced by EDM technique
Leifer, K., S. Mautino, H. Weman, A. Rudra, E. Pelucchi, F. Bobard, A. Wyser, and E. Kapon
Design and Nature, 2004. 6: p. 131
Use of quantitative EELS and cathodoluminescence for study of carrier confinement and diffusion in self organized vertical quantum wells
Ballif, C., D.M. Huljic, G. Willeke, and A. Hessler-Wyser
Applied Physics Letters, 2003. 82(12): p. 1878-1880
Silver thick-film contacts on highly doped n-type silicon emitters: Structural and electronic properties of the interface
Crevoiserat, S., T. Lehnert, A. Hessler-Wyser, and R. Gotthardt
Journal De Physique. IV: JP, 2001. 11(8)
TEM studies of in situ martensitic transformation in NiTi thin films
Hessler-Wyser, A., A. Cuenat, M. D�beli, C. Abromeit, and R. Gotthardt
Philosophical Magazine Letters, 2001. 81(12): p. 893-899
Multilayered phase formation after high-fluence implantation of nickel into aluminium
Cuenat, A., R. Sch�ublin, A. Hessler-Wyser, and R. Gotthardt
Ultramicroscopy, 2000. 83(3-4): p. 179-191
Structure analysis by diffraction of amorphous zones created by Ni ion implantation into pure Al. Ultramicroscopy
Wyser, A., R. Gotthardt, and R. Sch�ublin
Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms, 1996. 107(1-4): p. 273-275
Amorphization in Al induced by high-energy Ni ion implantation