Alfredo Pasquarello

EPFL SB IPHYS CSEA
PH H2 467 (Bâtiment PH)
Station 3
1015 Lausanne

Alfredo Pasquarello effectue ses études en physique à l'Ecole normale supérieure de Pise et à l'Université de Pise et obtient leurs diplômes respectifs en 1986. Il obtient le titre de Docteur ès sciences à l'EPFL en 1991 avec une thèse portant sur les transitions à plusieurs photons dans les solides. Ensuite, il effectue des recherches post-doctorales aux Laboratoires Bell (Murray Hill, New Jersey) sur les propriétés magnétiques des fullerènes de carbone. En 1993, il rejoint l'Institut romand de recherche numérique en physique des matériaux (IRRMA), où sa recherche porte sur des méthodes de simulation ab initio. En 1998, le Prix Latsis de l'EPFL lui est decerné pour son travail de recherche portant sur les matériaux à base de silice désordonnée. Bénéficiant de plusieurs subsides du Fonds National, il constitue ensuite sa propre équipe de recherche à l'IRRMA. En juillet 2003, il est nommé Professeur en Physique théorique de la matière condensée à l'EPFL. Actuellement, il dirige la Chaire de simulation à l'échelle atomique.

Enseignements

Alfredo Pasquarello enseigne le cours de Computer Simulation of Physical Systems I et le cours de Physique générale : quantique.

Groupe de recherche

Publications

  • Interface structure between silicon and its oxide by first-principles molecular dynamics, A. Pasquarello, M. S. Hybertsen, and R. Car, Nature 396, 58 (1998).
  • Ring currents in icosahedral C60, A. Pasquarello, M. Schlueter, and R. C. Haddon, Science 257, 1660 (1992).
  • Origin of the high-frequency doublet in the vibrational spectrum of vitreous SiO2, J. Sarnthein, A. Pasquarello, and R. Car, Science 275, 1925 (1997).
  • First solvation shell of the Cu(II) aqua ion: Evidence for fivefold coordination, A. Pasquarello, I. Petri, P. S. Salmon, O. Parisel, R. Car, E. Toth, D. H. Powell, H. E. Fischer, L. Helm, and A. E. Merbach, Science 291, 856 (2001).
  • Ab initio molecular dynamics for d-electron systems: Liquid copper at 1500 K, A. Pasquarello, K. Laasonen, R. Car, C. Lee, and D. Vanderbilt, Physical Review Letters 69, 1982 (1992).
  • Si 2p core-level shifts at the Si(001)-SiO2 interface: a first-principles study, A. Pasquarello, M. S. Hybertsen and R. Car, Physical Review Letters 74, 1024 (1995).
  • Identification of Raman defect lines as signatures of ring structures in vitreous silica, A. Pasquarello and R. Car, Physical Review Letters 80, 5154 (1998).
  • Car-Parrinello molecular dynamics with Vanderbilt ultrasoft pseudopotentials, K. Laasonen, A. Pasquarello, R. Car, C. Lee, and D. Vanderbilt, Physical Review B 47, 10142 (1993).
  • Accurate theory of excitons in GaAs/GaAlAs quantum wells, L. C. Andreani and A. Pasquarello, Physical Review B 42, 8928 (1990). 
Liste complète de publications sur Infoscience (EPFL) et sur ResearcherID.

Recherche

L'activité de recherche porte sur l'étude de phénomènes atomiques aussi bien du point de vue structural que dynamique. Une des motivations principales consiste à donner une description réaliste des mécanismes qui ont lieu à l'échelle atomique et nanométrique, afin de fournir des informations complémentaires par rapport à l'expérience. A cette fin, les interactions entre les atomes sont décrites dans le cadre de la mécanique quantique, par la théorie de la fonctionnelle de la densité. Ce genre de description, soutenue par des calculs de haute performance, permettent de visualiser les proccessus atomiques, agissant ainsi comme de véritables microscopes. Avec la montée en puissance des nanotechnologies, l'utilisation de ces techniques s'étend mondialement, touchant aux domaines de la physique, de la chimie, de la biologie et des sciences des matériaux. Des projets de recherche actuels concernent l'étude des matériaux désordonnés et des interfaces semiconducteur-oxide, trouvant ainsi des applications respectivement dans l'industrie des fibres optiques et dans la technologie de la microélectronique.

Thèses

Prix et distinctions

Prix Latsis EPFL

Latsis foundation

1998

2025

Equivalence of charged and neutral density functional formulations for correcting the many-body self-interaction of polarons

S. FallettaJ. CoulterJ. B. VarleyD. ÅbergB. Sadigh  et al.

2025

Absorption lines of 𝐹 centers in MgO and CaO through time-dependent hybrid-functional theory calculations

M. L. D. FranckelS. FallettaW. ChenA. Pasquarello

Physical Review B. 2025. Vol. 112, num. 10. DOI : 10.1103/d78q-93fc.

Perovskite-perovskite-silicon triple junction solar cells with improved carrier and photon management

K. ArtukD. TürkayA. G. KubaS. RiemelmoserJ. Steele  et al.

2025

Mechanism of First Proton‐Coupled Electron Transfer of Water Oxidation at the BiVO4‐Water Interface

Y. ZhuangA. Pasquarello

Angewandte Chemie. 2025. DOI : 10.1002/ange.202507071.

Electronic structure of α-MnO2 and β-MnO2 through GW with vertex corrections

M. S. AbdallahA. Pasquarello

Physical Review Materials. 2025. Vol. 9, num. 1, p. 015402. DOI : 10.1103/PhysRevMaterials.9.015402.

2024

Migration of hole polarons in anatase and rutile TiO2 through piecewise-linear functionals

G. PalermoS. FallettaA. Pasquarello

Physical Review B. 2024. Vol. 110, num. 23, p. 235205. DOI : 10.1103/PhysRevB.110.235205.

Quasiparticle self-consistent GW with effective vertex corrections in the polarizability and the self-energy applied to MnO, FeO, CoO, and NiO

M. S. AbdallahA. Pasquarello

Physical Review B. 2024. Vol. 110, num. 15, p. 155105. DOI : 10.1103/PhysRevB.110.155105.

High-Quality Data Enabling Universality of Band Gap Descriptor and Discovery of Photovoltaic Perovskites

H. WangR. OuyangW. ChenA. Pasquarello

Journal Of The American Chemical Society. 2024. DOI : 10.1021/jacs.4c03507.

First-principles calculations of defects and electron-phonon interactions: Seminal contributions of Audrius Alkauskas to the understanding of recombination processes

X. ZhangM. E. TurianskyL. RazinkovasM. MaciaszekP. Broqvist  et al.

Journal Of Applied Physics. 2024. Vol. 135, num. 15, p. 150901. DOI : 10.1063/5.0205525.

Nonempirical semilocal density functionals for correcting the self-interaction of polaronic states

S. FallettaA. Pasquarello

Journal Of Applied Physics. 2024. Vol. 135, num. 13, p. 131101. DOI : 10.1063/5.0197658.

Dynamics of the charge transfer to solvent process in aqueous iodide

J. LanM. CherguiA. Pasquarello

Nature Communications. 2024. Vol. 15, num. 1, p. 2544. DOI : 10.1038/s41467-024-46772-0.

Absolute energy levels of liquid water from many-body perturbation theory with effective vertex corrections

A. TalT. BischoffA. Pasquarello

Proceedings Of The National Academy Of Sciences Of The United States Of America (PNAS). 2024. Vol. 121, num. 10, p. e2311472121. DOI : 10.1073/pnas.2311472121.

2023

Band alignments through quasiparticle self-consistent GW with efficient vertex corrections

A. LorinT. BischoffA. TalA. Pasquarello

Physical Review B. 2023. Vol. 108, num. 24, p. 245303. DOI : 10.1103/PhysRevB.108.245303.

2023 Roadmap on molecular modelling of electrochemical energy materials

C. ZhangJ. ChengY. ChenM. K. Y. ChanQ. Cai  et al.

Journal Of Physics-Energy. 2023. Vol. 5, num. 4, p. 041501. DOI : 10.1088/2515-7655/acfe9b.

Range-separated hybrid functionals for accurate prediction of band gaps of extended systems

J. YangS. FallettaA. Pasquarello

Npj Computational Materials. 2023. Vol. 9, num. 1, p. 108. DOI : 10.1038/s41524-023-01064-x.

Many-body screening effects in liquid water

I. ReshetnyakA. LorinA. Pasquarello

Nature Communications. 2023. Vol. 14, num. 1, p. 2705. DOI : 10.1038/s41467-023-38420-w.

Polaron hopping through piecewise-linear functionals

S. FallettaA. Pasquarello

Physical Review B. 2023. Vol. 107, num. 20, p. 205125. DOI : 10.1103/PhysRevB.107.205125.

Self-Interaction and Polarons in Density Functional Theory

S. Falletta / A. Pasquarello (Dir.)

Lausanne, EPFL, 2023. p. 161. DOI : 10.5075/epfl-thesis-10028.

2022

Hubbard U through polaronic defect states

S. FallettaA. Pasquarello

Npj Computational Materials. 2022. Vol. 8, num. 1, p. 263. DOI : 10.1038/s41524-022-00958-6.

Accurate and efficient band-gap predictions for metal halide perovskites at finite temperature

H. WangA. TalT. BischoffP. GonoA. Pasquarello

Npj Computational Materials. 2022. Vol. 8, num. 1, p. 237. DOI : 10.1038/s41524-022-00869-6.

Oxygen Evolution at the BiVO4-Water Interface: Mechanism of the Water Dehydrogenation Reaction

S. LyuJ. WiktorA. Pasquarello

ACS Catalysis. 2022. Vol. 12, num. 19, p. 11734 - 11742. DOI : https://doi.org/10.1021/acscatal.2c03331.

Many-Body Self-Interaction and Polarons

S. FallettaA. Pasquarello

Physical Review Letters. 2022. Vol. 129, num. 12, p. 126401. DOI : 10.1103/PhysRevLett.129.126401.

Polarons free from many-body self-interaction in density functional theory

S. FallettaA. Pasquarello

Physical Review B. 2022. Vol. 106, num. 12, p. 125119. DOI : 10.1103/PhysRevB.106.125119.

Temperature Dependent Properties of the Aqueous Electron

J. LanV. V. RybkinA. Pasquarello

Angewandte Chemie International Edition. 2022. p. e202209398. DOI : 10.1002/anie.202209398.

Atomic-Level Description of Thermal Fluctuations in Inorganic LeadHalide Perovskites

O. CannelliJ. WiktorN. ColonnaL. LeroyM. Puppin  et al.

The Journal of Physical Chemistry Letters. 2022. Vol. 13, num. 15, p. 3382 - 3391. DOI : 10.1021/acs.jpclett.2c00281.

Decoupled Structural Responses upon Light and Thermal Functional Activation in CsPbBr<inf>3</inf> Perovskites

O. CannelliJ. WiktorN. ColonnaL. LeroyM. Puppin  et al.

The International Conference on Ultrafast Phenomena (UP) 2022. 2022. International Conference on Ultrafast Phenomena 2022, Montreal, Canada, 2022-07-18 - 2022-07-22.

One-Shot Approach for Enforcing Piecewise Linearity on Hybrid Functionals: Application to Band Gap Predictions

J. YangS. FallettaA. Pasquarello

The Journal of Physical Chemistry Letters. 2022. Vol. 13, num. 13, p. 3066 - 3071. DOI : 10.1021/acs.jpclett.2c00414.

2021

Electronic Structure of Water from Koopmans-Compliant Functionals

J. M. de AlmeidaN. L. NguyenN. ColonnaW. ChenC. Rodrigues Miranda  et al.

Journal of Chemical Theory and Computation. 2021. Vol. 17, num. 7, p. 3923 - 3930. DOI : 10.1021/acs.jctc.1c00063.

Band gaps of liquid water and hexagonal ice through advanced electronic-structure calculations

T. BischoffI. ReshetnyakA. Pasquarello

Physical Review Research. 2021. Vol. 3, num. 2, p. 023182. DOI : 10.1103/PhysRevResearch.3.023182.

Vertex function compliant with the Ward identity for quasiparticle self-consistent calculations beyond GW

A. TalW. ChenA. Pasquarello

Physical Review B. 2021. Vol. 103, num. 16, p. L161104. DOI : 10.1103/PhysRevB.103.L161104.

High-performance NiOOH/FeOOH electrode for OER catalysis

P. GonoA. Pasquarello

The Journal of Chemical Physics. 2021. Vol. 154, num. 2, p. 024706. DOI : 10.1063/5.0036019.

Atomic-Scale Modelling of Electrochemical Interfaces through Constant Fermi Level Molecular Dynamics

A. BouzidA. Pasquarello

Atomic-Scale Modelling of Electrochemical Systems; John Wiley & Sons Ltd, 2021. p. 221 - 240. - 9781119605652.

DOI : 10.1002/9781119605652.ch7.

Nonempirical hybrid functionals for advanced electronic-structure calculations

T. Bischoff / A. Pasquarello (Dir.)

Lausanne, EPFL, 2021. p. 162. DOI : 10.5075/epfl-thesis-8474.

2020

Evaluation of Photocatalysts for Water Splitting through Combined Analysis of Surface Coverage and Energy-Level Alignment

Z. GuoF. AmbrosioA. Pasquarello

ACS Catalysis. 2020. Vol. 10, num. 22, p. 13186 - 13195. DOI : 10.1021/acscatal.0c03006.

Unraveling the synergy between metal-organic frameworks and co-catalysts in photocatalytic water splitting

S. FallettaP. GonoZ. GuoS. KampouriK. C. Stylianou  et al.

Journal of Materials Chemistry A. 2020. Vol. 8, num. 39, p. 20493 - 20502. DOI : 10.1039/d0ta06028c.

Small Electron Polarons in CsPbBr3: Competition between Electron Localization and Delocalization

N. OsterbackaP. ErhartS. FallettaA. PasquarelloJ. Wiktor

Chemistry Of Materials. 2020. Vol. 32, num. 19, p. 8393 - 8400. DOI : 10.1021/acs.chemmater.0c02345.

Band alignment at <bold>beta</bold>-Ga2O3/III-N (III = Al, Ga) interfaces through hybrid functional calculations

S. LyuA. Pasquarello

Applied Physics Letters. 2020. Vol. 117, num. 10, p. 102103. DOI : 10.1063/5.0020442.

Low-Frequency Dielectric Response of Tetragonal Perovskite CH3NH3PbI3

E. BergerJ. WiktorA. Pasquarello

The Journal of Physical Chemistry Letters. 2020. Vol. 11, num. 15, p. 6279 - 6285. DOI : 10.1021/acs.jpclett.0c00418.

Accurate optical spectra through time-dependent density functional theory based on screening-dependent hybrid functionals

A. TalP. LiuG. KresseA. Pasquarello

Physical Review Research. 2020. Vol. 2, num. 3, p. 032019. DOI : 10.1103/PhysRevResearch.2.032019.

Finite-size corrections of defect energy levels involving ionic polarization

S. FallettaJ. WiktorA. Pasquarello

Physical Review B. 2020. Vol. 102, num. 4, p. 041115. DOI : 10.1103/PhysRevB.102.041115.

Hydrogen Bonding of Ammonia with (H,OH)-Si(001) Revealed by Experimental and Ab Initio Photoelectron Spectroscopy

L. P. RamirezJ.-J. GalletF. BournelF. LimS. Carniato  et al.

The Journal of Physical Chemistry A. 2020. Vol. 124, num. 26, p. 5378 - 5388. DOI : 10.1021/acs.jpca.0c03458.

Band alignment at the CaF2/Si(111) interface through advanced electronic structure calculations

T. BischoffI. ReshetnyakA. Pasquarello

Physical Review B. 2020. Vol. 101, num. 23, p. 235302. DOI : 10.1103/PhysRevB.101.235302.

Oxygen evolution reaction: Bifunctional mechanism breaking the linear scaling relationship

P. GonoA. Pasquarello

Journal Of Chemical Physics. 2020. Vol. 152, num. 10, p. 104712. DOI : 10.1063/1.5143235.

On the Electronic and Optical Properties of Metal-Organic Frameworks: Case Study of MIL-125 and MIL-125-NH2

G. CapanoF. AmbrosioS. KampouriK. C. StylianouA. Pasquarello  et al.

Journal Of Physical Chemistry C. 2020. Vol. 124, num. 7, p. 4065 - 4072. DOI : 10.1021/acs.jpcc.9b09453.

Computational Modeling of the Oxygen Evolution Reaction at Semiconductor-Water Interfaces: A Path Towards Breaking Linear Scaling Relationships

P. Gono / A. Pasquarello (Dir.)

Lausanne, EPFL, 2020. p. 141. DOI : 10.5075/epfl-thesis-8008.

Exploring Defects in Semiconductor Materials Through Constant Fermi Level Ab-Initio Molecular Dynamics

A. BouzidA. Pasquarello

Theory and Simulation in Physics for Materials Applications. Cutting-Edge Techniques in Theoretical and Computational Materials Science; Springer, 2020. p. 39 - 55. - 9783030377892.

DOI : 10.1007/978-3-030-37790-8_3.

2019

Nonempirical hybrid functionals for band gaps of inorganic metal-halide perovskites

T. BischoffJ. WiktorW. ChenA. Pasquarello

Physical Review Materials. 2019. Vol. 3, num. 12, p. 123802. DOI : 10.1103/PhysRevMaterials.3.123802.

Absolute band alignment at semiconductor-water interfaces using explicit and implicit descriptions for liquid water

N. G. HoermannZ. GuoF. AmbrosioO. AndreussiA. Pasquarello  et al.

Npj Computational Materials. 2019. Vol. 5, p. 100. DOI : 10.1038/s41524-019-0238-4.

Picture of the wet electron: a localized transient state in liquid water

M. PizzocheroF. AmbrosioA. Pasquarello

Chemical Science. 2019. Vol. 10, num. 31, p. 7442 - 7448. DOI : 10.1039/c8sc05101a.

Effect of the Solvent on the Oxygen Evolution Reaction at the TiO2-Water Interface

P. GonoF. AmbrosioA. Pasquarello

Journal Of Physical Chemistry C. 2019. Vol. 123, num. 30, p. 18467 - 18474. DOI : 10.1021/acs.jpcc.9b05015.

Defect Formation Energies of Interstitial C, Si, and Ge Impurities in beta-Ga2O3

A. BouzidA. Pasquarello

Physica Status Solidi-Rapid Research Letters. 2019. Vol. 13, num. 8, p. 1800633. DOI : 10.1002/pssr.201800633.

Reaction pathway of oxygen evolution on Pt(111) revealed through constant Fermi level molecular dynamics

A. BouzidP. GonoA. Pasquarello

Journal of Catalysis. 2019. Vol. 375, p. 135 - 139. DOI : 10.1016/j.jcat.2019.05.025.

Adjustable potential probes for band-gap predictions of extended systems through nonempirical hybrid functionals

T. BischoffI. ReshetnyakA. Pasquarello

Physical Review B. 2019. Vol. 99, num. 20, p. 201114. DOI : 10.1103/PhysRevB.99.201114.

Electron and Hole Polarons at the BiVO4-Water Interface

J. WiktorA. Pasquarello

ACS Applied Materials & Interfaces. 2019. Vol. 11, num. 20, p. 18423 - 18426. DOI : 10.1021/acsami.9b03566.

Extrinsic Defects in Amorphous Oxides: Hydrogen, Carbon, and Nitrogen Impurities in Alumina

Z. GuoF. AmbrosioA. Pasquarello

Physical Review Applied. 2019. Vol. 11, num. 2, p. 024040. DOI : 10.1103/PhysRevApplied.11.024040.

Oxide versus Nonoxide Cathode Materials for Aqueous Zn Batteries: An Insight into the Charge Storage Mechanism and Consequences Thereof

P. OberholzerE. TervoortA. BouzidA. PasquarelloD. Kundu

ACS Applied Materials & Interfaces. 2019. Vol. 11, num. 1, p. 674 - 682. DOI : 10.1021/acsami.8b16284.

Alignment of energy levels in amorphous oxides and at semiconductor-water interfaces

Z. Guo / A. Pasquarello (Dir.)

Lausanne, EPFL, 2019. p. 157. DOI : 10.5075/epfl-thesis-9142.

2018

Reactivity and energy level of a localized hole in liquid water

F. AmbrosioA. Pasquarello

Physical Chemistry Chemical Physics. 2018. Vol. 20, num. 48, p. 30281 - 30289. DOI : 10.1039/c8cp03682a.

Sizable Excitonic Effects Undermining the Photocatalytic Efficiency of beta-Cu2V2O7

J. WiktorI. ReshetnyakM. StrachM. ScarongellaR. Buonsanti  et al.

The Journal of Physical Chemistry Letters. 2018. Vol. 9, num. 19, p. 5698 - 5703. DOI : 10.1021/acs.jpclett.8b02323.

Mechanism suppressing charge recombination at iodine defects in CH3NH3PbI3 by polaron formation

J. WiktorF. AmbrosioA. Pasquarello

Journal of Materials Chemistry A. 2018. Vol. 6, num. 35, p. 16863 - 16867. DOI : 10.1039/c8ta06466k.

Atomic-Scale Simulation of Electrochemical Processes at Electrode/Water Interfaces under Referenced Bias Potential

A. BouzidA. Pasquarello

The Journal of Physical Chemistry Letters. 2018. Vol. 9, num. 8, p. 1880 - 1884. DOI : 10.1021/acs.jpclett.8b00573.

pH-Dependent Catalytic Reaction Pathway for Water Splitting at the BiVO4−Water Interface from the Band Alignment

F. AmbrosioJ. WiktorA. Pasquarello

ACS Energy Letters. 2018. Vol. 3, num. 4, p. 829 - 834. DOI : 10.1021/acsenergylett.8b00104.

Role of Polarons in Water Splitting: The Case of BiVO4

J. WiktorF. AmbrosioA. Pasquarello

Acs Energy Letters. 2018. Vol. 3, num. 7, p. 1693 - 1697. DOI : 10.1021/acsenergylett.8b00938.

Surface Polarons Reducing Overpotentials in the Oxygen Evolution Reaction

P. GonoJ. WiktorF. AmbrosioA. Pasquarello

ACS CATALYSIS. 2018. Vol. 8, num. 7, p. 5847 - 5851. DOI : 10.1021/acscatal.8b01120.

Hole diffusion across leaky amorphous TiO2 coating layers for catalytic water splitting at photoanodes

Z. GuoF. AmbrosioA. Pasquarello

Journal of Materials Chemistry A. 2018. Vol. 6, num. 25, p. 11804 - 11810. DOI : 10.1039/c8ta02179a.

Nonempirical hybrid functionals for band gaps and polaronic distortions in solids

G. MiceliW. ChenI. ReshetnyakA. Pasquarello

Physical Review B. 2018. Vol. 97, num. 12, p. 121112(R). DOI : 10.1103/PhysRevB.97.121112.

Absolute Energy Levels of Liquid Water

F. AmbrosioZ. GuoA. Pasquarello

The Journal of Physical Chemistry Letters. 2018. Vol. 9, num. 12, p. 3212 - 3216. DOI : 10.1021/acs.jpclett.8b00891.

Origin of low electron-hole recombination rate in metal halide perovskites

F. AmbrosioJ. WiktorF. De AngelisA. Pasquarello

Energy & Environmental Science. 2018. Vol. 11, num. 1, p. 101 - 105. DOI : 10.1039/c7ee01981e.

pH-Dependent Surface Chemistry from First Principles: Application to the BiVO4(010)-Water Interface

F. AmbrosioJ. WiktorA. Pasquarello

ACS Applied Materials & Interfaces. 2018. Vol. 10, num. 12, p. 10011 - 10021. DOI : 10.1021/acsami.7b16545.

Comment on "Fundamental Resolution of Difficulties in the Theory of Charged Point Defects in Semiconductors"

W. ChenA. Pasquarello

Physical Review Letters. 2018. Vol. 120, num. 3, p. 039603. DOI : 10.1103/PhysRevLett.120.039603.

Nonempirical dielectric-dependent hybrid functional with range separation for semiconductors and insulators

W. ChenG. MiceliG. RignaneseA. Pasquarello

Physical Review Materials. 2018. Vol. 2, num. 7, p. 073803. DOI : 10.1103/PhysRevMaterials.2.073803.

Organic Cathode for Aqueous Zn-Ion Batteries: Taming a Unique Phase Evolution toward Stable Electrochemical Cycling

D. KunduP. OberholzerC. GlarosA. BouzidE. Tervoort  et al.

Chemistry of Materials. 2018. Vol. 30, num. 11, p. 3874 - 3881. DOI : 10.1021/acs.chemmater.8b01317.

Partial vibrational density of states for amorphous solids from inelastic neutron scattering

D. A. J. WhittakerL. GiacomazziD. AdrojaS. M. BenningtonA. Pasquarello  et al.

Physical Review B. 2018. Vol. 98, num. 6, p. 064205. DOI : 10.1103/PhysRevB.98.064205.

2017

Electron trap states at InGaAs/oxide interfaces under inversion through constant Fermi-level <i>ab initio</i> molecular dynamics

A. BouzidA. Pasquarello

JOURNAL OF PHYSICS-CONDENSED MATTER. 2017. Vol. 29, num. 50. DOI : 10.1088/1361-648X/aa9a00.

Note: Assessment of the SCAN+rVV10 functional for the structure of liquid water

J. WiktorF. AmbrosioA. Pasquarello

Journal Of Chemical Physics. 2017. Vol. 147, num. 21, p. 216101. DOI : 10.1063/1.5006146.

Alignment of Redox Levels at Semiconductor-Water Interfaces

Z. GuoF. AmbrosioW. ChenP. GonoA. Pasquarello

Chemistry of Materials. 2017. Vol. 30, num. 1, p. 94 - 111. DOI : 10.1021/acs.chemmater.7b02619.

Nature of electron trap states under inversion at In0.53Ga0.47As/Al2O3 interfaces

D. ColleoniG. PourtoisA. Pasquarello

Applied Physics Letters. 2017. Vol. 110, num. 11, p. 111602. DOI : 10.1063/1.4977980.

Oxygen DX center in In0.17Al0.83N: Nonradiative recombination and persistent photoconductivity

R. MeliG. MiceliA. Pasquarello

Applied Physics Letters. 2017. Vol. 110, num. 7, p. 072101. DOI : 10.1063/1.4975934.

Accuracy of GW for calculating defect energy levels in solids

W. ChenA. Pasquarello

Physical Review B. 2017. Vol. 96, num. 2, p. 020101. DOI : 10.1103/PhysRevB.96.020101.

Predictive Determination of Band Gaps of Inorganic Halide Perovskites

J. WiktorU. RothlisbergerA. Pasquarello

The Journal of Physical Chemistry Letters. 2017. Vol. 8, num. 22, p. 5507 - 5512. DOI : 10.1021/acs.jpclett.7b02648.

Migration of Mg and other interstitial metal dopants in GaN

G. MiceliA. Pasquarello

Physica Status Solidi-Rapid Research Letters. 2017. Vol. 11, num. 7, p. 1700081. DOI : 10.1002/pssr.201700081.

Comprehensive modeling of the band gap and absorption spectrum of BiVO4

J. WiktorI. ReshetnyakF. AmbrosioA. Pasquarello

Physical Review Materials. 2017. Vol. 1, num. 2, p. 022401. DOI : 10.1103/PhysRevMaterials.1.022401.

Electronic and structural characterization of barrier-type amorphous aluminium oxide

F. EvangelistiM. StiefelO. GusevaR. P. NiaR. Hauert  et al.

Electrochimica Acta. 2017. Vol. 224, p. 503 - 516. DOI : 10.1016/j.electacta.2016.12.090.

Identification of Semiconductor Defects through Constant-Fermi-Level Ab Initio Molecular Dynamics: Application to GaAs

A. BouzidA. Pasquarello

Physical Review Applied. 2017. Vol. 8, num. 1, p. 014010. DOI : 10.1103/PhysRevApplied.8.014010.

Electronic Levels of Excess Electrons in Liquid Water

F. AmbrosioG. MiceliA. Pasquarello

The Journal of Physical Chemistry Letters. 2017. Vol. 8, num. 9, p. 2055 - 2059. DOI : 10.1021/acs.jpclett.7b00699.

Partial Molar Volumes of Aqua Ions from First Principles

J. WiktorF. BrunevalA. Pasquarello

Journal of Chemical Theory and Computation. 2017. Vol. 13, num. 8, p. 3427 - 3431. DOI : 10.1021/acs.jctc.7b00474.

Redox Levels through Constant Fermi-Level ab Initio Molecular Dynamics

A. BouzidA. Pasquarello

Journal of Chemical Theory and Computation. 2017. Vol. 13, num. 4, p. 1769 - 1777. DOI : 10.1021/acs.jctc.6b01232.

2016

Diffusion of interstitial oxygen in silicon and germanium: A hybrid functional study

D. ColleoniA. Pasquarello

Journal of physics. Condensed matter : an Institute of Physics journal. 2016. Vol. 28, num. 49. DOI : 10.1088/0953-8984/28/49/495801.

Self-compensation due to point defects in Mg-doped GaN

G. MiceliA. Pasquarello

Physical Review B. 2016. Vol. 93, num. 16, p. 165207. DOI : 10.1103/PhysRevB.93.165207.

Structural, Dynamical, and Electronic Properties of Liquid Water: A Hybrid Functional Study

F. AmbrosioG. MiceliA. Pasquarello

The Journal of Physical Chemistry B. 2016. Vol. 120, num. 30, p. 7456 - 7470. DOI : 10.1021/acs.jpcb.6b03876.

Giant apparent lattice distortions in STM images of corrugated sp2-hybridised monolayers

Q. DuboutF. CallejaG. SclauzeroM. EtzkornA. Lehnert  et al.

New Journal of Physics. 2016. Vol. 18, num. 10, p. 103027. DOI : 10.1088/1367-2630/18/10/103027.

Oxygen defects in GaAs: A hybrid functional study

D. ColleoniA. Pasquarello

Physical Review B. 2016. Vol. 93, num. 12, p. 125208. DOI : 10.1103/PhysRevB.93.125208.

Ab initio Electronic Structure of Liquid Water

W. ChenF. AmbrosioG. MiceliA. Pasquarello

Physical Review Letters. 2016. Vol. 117, p. 186401. DOI : 10.1103/PhysRevLett.117.186401.

Liquid Water through Density-Functional Molecular Dynamics: Plane-Wave vs Atomic-Orbital Basis Sets

G. MiceliJ. HutterA. Pasquarello

Journal of Chemical Theory and Computation. 2016. Vol. 12, num. 8, p. 3456 - 3462. DOI : 10.1021/acs.jctc.6b00271.

Oxygen defects in amorphous Al2O3: A hybrid functional study

Z. GuoF. AmbrosioA. Pasquarello

Applied Physics Letters. 2016. Vol. 109, num. 6, p. 062903. DOI : 10.1063/1.4961125.

Absolute deformation potentials of two-dimensional materials

J. WiktorA. Pasquarello

Physical Review B. 2016. Vol. 94, num. 24, p. 245411. DOI : 10.1103/PhysRevB.94.245411.

Redox levels in aqueous solution: Effect of van der Waals interactions and hybrid functionals

F. AmbrosioG. MiceliA. Pasquarello

The Journal of chemical physics. 2016. Vol. 143, num. 24. DOI : 10.1063/1.4938189.

2015

Arsenic related defect states resonant with the semiconductor conduction band at the In0.53Ga0.47As/oxide interface: A density functional study

D. ColleoniG. MiceliA. Pasquarello

Microelectronic Engineering. 2015. Vol. 147, p. 260 - 263. DOI : 10.1016/j.mee.2015.04.117.

Fermi-level pinning through defects at GaAs/oxide interfaces: A density functional study

D. ColleoniG. MiceliA. Pasquarello

Physical Review B. 2015. Vol. 92, num. 12, p. 125304. DOI : 10.1103/PhysRevB.92.125304.

Interfacial Ga-As suboxide: Structural and electronic properties

D. ColleoniA. Pasquarello

Applied Physics Letters. 2015. Vol. 107, num. 3, p. 031605. DOI : 10.1063/1.4927311.

Isobaric first-principles molecular dynamics of liquid water with nonlocal van der Waals interactions

G. MiceliS. de GironcoliA. Pasquarello

Journal of Chemical Physics. 2015. Vol. 142, num. 3, p. 034501. DOI : 10.1063/1.4905333.

Energetics of native point defects in GaN: A density-functional study

G. MiceliA. Pasquarello

Microelectronic Engineering. 2015. Vol. 147, p. 51 - 54. DOI : 10.1016/j.mee.2015.04.015.

Band alignment and chemical bonding at the GaAs/Al2O3 interface: A hybrid functional study

D. ColleoniG. MiceliA. Pasquarello

Applied Physics Letters. 2015. Vol. 107, num. 21, p. 211601. DOI : 10.1063/1.4936240.

Origin of Fermi-level pinning at GaAs/oxide interfaces through the hybrid functional study of defects

D. Colleoni / A. Pasquarello (Dir.)

Lausanne, EPFL, 2015. p. 134. DOI : 10.5075/epfl-thesis-6898.

First-principles determination of defect energy levels through hybrid density functionals and GW

W. ChenA. Pasquarello

Journal of Physics: Condensed Matter. 2015. Vol. 27, num. 13, p. 133202. DOI : 10.1088/0953-8984/27/13/133202.

Accurate band gaps of extended systems via efficient vertex corrections in GW

W. ChenA. Pasquarello

Physical Review B. 2015. Vol. 92, num. 4, p. 041115. DOI : 10.1103/PhysRevB.92.041115.

2014

Minimum energy path and atomistic mechanism of the elementary step in oxygen diffusion in silicon: A density-functional study

J. F. BinderA. Pasquarello

Physical Review B. 2014. Vol. 89, num. 24, p. 245306. DOI : 10.1103/PhysRevB.89.245306.

Defect levels at GaAs/Al2O3 interfaces: As-As dimer vs. Ga dangling bond

G. MiceliA. Pasquarello

Applied Surface Science. 2014. Vol. 291, p. 16 - 19. DOI : 10.1016/j.apsusc.2013.07.150.

Intercalation of H at the graphene/SiC(0001) interface: Structure and stability from first principles

G. SclauzeroA. Pasquarello

Applied Surface Science. 2014. Vol. 291, p. 64 - 68. DOI : 10.1016/j.apsusc.2013.09.031.

Origin of Fermi-level pinning at GaAs surfaces and interfaces

D. ColleoniG. MiceliA. Pasquarello

Journal of Physics: Condensed Matter. 2014. Vol. 26, num. 49, p. 492202. DOI : 10.1088/0953-8984/26/49/492202.

Band-edge positions in GW: Effects of starting point and self-consistency

W. ChenA. Pasquarello

Physical Review B. 2014. Vol. 90, num. 16, p. 165133. DOI : 10.1103/PhysRevB.90.165133.

The O-As defect in GaAs: A hybrid density functional study

D. ColleoniA. Pasquarello

Applied Surface Science. 2014. Vol. 291, p. 6 - 10. DOI : 10.1016/j.apsusc.2013.09.063.

Band offsets of lattice-matched semiconductor heterojunctions through hybrid functionals and G(0)W(0)

K. SteinerW. ChenA. Pasquarello

Physical Review B. 2014. Vol. 89, num. 20, p. 205309. DOI : 10.1103/PhysRevB.89.205309.

Infrared spectra of jennite and tobermorite from first-principles

A. VidmerG. SclauzeroA. Pasquarello

Cement and Concrete Research. 2014. Vol. 60, p. 11 - 23. DOI : 10.1016/j.cemconres.2014.03.004.

2013

Defect energy levels of the As-As dimer at InGaAs/oxide interfaces: A first principles study

G. MiceliA. Pasquarello

Microelectronic Engineering. 2013. Vol. 109, p. 60 - 63. DOI : 10.1016/j.mee.2013.03.053.

First principles study of As 2p core-level shifts at GaAs/Al2O3 interfaces

G. MiceliA. Pasquarello

Applied Physics Letters. 2013. Vol. 102, num. 20, p. 201607. DOI : 10.1063/1.4807730.

Finite-Size Supercell Correction for Charged Defects at Surfaces and Interfaces

H.-P. KomsaA. Pasquarello

Physical Review Letters. 2013. Vol. 110, num. 9, p. 095505. DOI : 10.1103/PhysRevLett.110.095505.

Amphoteric defects in GaAs leading to Fermi-level pinning: A hybrid functional study

D. ColleoniA. Pasquarello

Microelectronic Engineering. 2013. Vol. 109, p. 50 - 53. DOI : 10.1016/j.mee.2013.03.068.

First-principles study of H adsorption on graphene/SiC(0001)

G. SclauzeroA. Pasquarello

Physica Status Solidi B-Basic Solid State Physics. 2013. Vol. 250, num. 12, p. 2523 - 2528. DOI : 10.1002/pssb.201300084.

Correspondence of defect energy levels in hybrid density functional theory and many-body perturbation theory

W. ChenA. Pasquarello

Physical Review B. 2013. Vol. 88, num. 11, p. 115104. DOI : 10.1103/PhysRevB.88.115104.

Accurate determination of charge transition levels of the As-As dimer defect at GaAs/oxide interfaces through hybrid functionals

G. MiceliA. Pasquarello

Applied Physics Letters. 2013. Vol. 103, num. 4, p. 041602. DOI : 10.1063/1.4816661.

Assignment of Fermi-level pinning and optical transitions to the (As-Ga)(2)-O-As center in oxygen-doped GaAs

D. ColleoniA. Pasquarello

Applied Physics Letters. 2013. Vol. 103, num. 14, p. 142108. DOI : 10.1063/1.4824309.

2012

Finite-size supercell correction schemes for charged defect calculations

H.-P. KomsaT. T. RantalaA. Pasquarello

Physical Review B. 2012. Vol. 86, num. 4, p. 045112. DOI : 10.1103/PhysRevB.86.045112.

Germanium core-level shifts at Ge/GeO2 interfaces through hybrid functionals

J. F. BinderH.-P. KomsaP. BroqvistA. Pasquarello

Physical Review B. 2012. Vol. 85, p. 245305. DOI : 10.1103/PhysRevB.85.245305.

Comparison of vacancy and antisite defects in GaAs and InGaAs through hybrid functionals

H.-P. KomsaA. Pasquarello

Journal of Physics: Condensed Matter. 2012. Vol. 24, num. 4, p. 045801. DOI : 10.1088/0953-8984/24/4/045801.

First principles study of electronic and structural properties of the Ge/GeO2 interface

P. BroqvistJ. F. BinderA. Pasquarello

Physica B: Condensed Matter. 2012. 26th International Conference on Defects in Semiconductors (ICDS), Nelson, NEW ZEALAND, 2011-07-18 - 2011-07-22. p. 2926 - 2931. DOI : 10.1016/j.physb.2011.08.037.

Low-strain interface models for epitaxial graphene on SiC(0001)

G. SclauzeroA. Pasquarello

Diamond And Related Materials. 2012. Vol. 23, p. 178 - 183. DOI : 10.1016/j.diamond.2011.11.001.

Carbon rehybridization at the graphene/SiC(0001) interface: Effect on stability and atomic-scale corrugation

G. SclauzeroA. Pasquarello

Physical Review B. 2012. Vol. 85, num. 16, p. 161405(R). DOI : 10.1103/PhysRevB.85.161405.

Electronic and Structural Properties of the Ge/GeO2 Interface through Hybrid Functionals

J. F. Binder / A. Pasquarello (Dir.)

Lausanne, EPFL, 2012. p. 141. DOI : 10.5075/epfl-thesis-5363.

Band-edge levels in semiconductors and insulators: Hybrid density functional theory versus many-body perturbation theory

W. ChenA. Pasquarello

Physical Review B. 2012. Vol. 86, p. 035134. DOI : 10.1103/PhysRevB.86.035134.

Medium range structure of tetrahedrally-bonded glasses through the first principles investigation of Raman spectra.

L. GiacomazziA. Pasquarello

Aip Conference Proceedings. 2012. Seventh International Conference of Computational Methods in Sciences and Engineering, Greece, 2009-09-29 - 2009-10-04. p. 953 - 956. DOI : 10.1063/1.4771854.

Intrinsic defects in GaAs and In GaAs through hybrid functional calculations

H.-P. KomsaA. Pasquarello

Physica B: Condensed Matter. 2012. 26th International Conference on Defects in Semiconductors (ICDS), Nelson, NEW ZEALAND, 2011-07-17 - 2011-07-22. p. 2833 - 2837. DOI : 10.1016/j.physb.2011.08.030.

Comparison between various finite-size supercell correction schemes for charged defect calculations

H.-P. KomsaT. RantalaA. Pasquarello

Physica B: Condensed Matter. 2012. 26th International Conference on Defects in Semiconductors (ICDS), Nelson, NEW ZEALAND, 2011-07-17 - 2011-07-22. p. 3063 - 3067. DOI : 10.1016/j.physb.2011.08.028.

Stability of valence alternation pairs across the substoichiometric region at Ge/GeO2 interfaces

J. F. BinderP. BroqvistA. Pasquarello

Physica B: Condensed Matter. 2012. 26th International Conference on Defects in Semiconductors (ICDS), Nelson, NEW ZEALAND, 2011-07-18 - 2011-07-22. p. 2939 - 2942. DOI : 10.1016/j.physb.2011.08.075.

2011

Identification of defect levels at InxGa1-xAs/oxide interfaces through hybrid functionals

H.-P. KomsaA. Pasquarello

Microelectronic Engineering. 2011. 17th International Conference on Insultating Films on Semiconductors, Grenoble, France, 2011-06-21 - 2011-06-24. p. 1436 - 1439. DOI : 10.1016/j.mee.2011.03.081.

Stability and charge transfer at the interface between SiC(0001) and epitaxial graphene

G. SclauzeroA. Pasquarello

Microelectronic Engineering. 2011. 17th International Conference on Insultating Films on Semiconductors, Grenoble, France, 2011-06-21 - 2011-06-24. p. 1478 - 1481. DOI : 10.1016/j.mee.2011.03.138.

Advanced Calculations for Defects in Materials: Electronic Structure Methods

A. AlkauskasP. DeàkJ. NeugebauerA. PasquarelloC. G. Van de Walle

Wiley-VCH, 2011.

Electron density of states at Ge/oxide interfaces due to GeOx formation

J. F. BinderP. BroqvistA. Pasquarello

Microelectronic Engineering. 2011. EMRS 2010 Spring Meeting on Post-Si-CMOS Electronic Devices - The Role of Ge and III-V Materials, Strasbourg, France, 2010-07-11. p. 391 - 394. DOI : 10.1016/j.mee.2010.09.006.

Defect levels through hybrid density functionals: Insights and applications

A. AlkauskasP. BroqvistA. Pasquarello

Physica Status Solidi B-Basic Solid State Physics. 2011. Vol. 248, p. 775 - 789. DOI : 10.1002/pssb.201046195.

Band offsets at the Ge/GeO2 interface through hybrid density functionals (vol 94, 141911, 2009)

P. BroqvistJ. F. BinderA. Pasquarello

Applied Physics Letters. 2011. Vol. 98, num. 12, p. 129901. DOI : 10.1063/1.3571449.

Vibrational properties of vitreous GeSe2 with the Becke-Lee-Yang-Parr density functional

L. GiacomazziC. MassobrioA. Pasquarello

Journal of Physics: Condensed Matter. 2011. Vol. 23, p. 295401. DOI : 10.1088/0953-8984/23/29/295401.

Assessing the accuracy of hybrid functionals in the determination of defect levels: Application to the As antisite in GaAs

H.-P. KomsaA. Pasquarello

Physical Review B. 2011. Vol. 84, num. 7, p. 075207. DOI : 10.1103/PhysRevB.84.075207.

Defect levels of carbon-related defects at the SiC/SiO2 interface from hybrid functionals

F. DevynckA. AlkauskasP. BroqvistA. Pasquarello

Physical Review B. 2011. Vol. 83, num. 19, p. 195319. DOI : 10.1103/PhysRevB.83.195319.

Band offsets at Ge/GeO2 interfaces: Effect of different interfacial bonding patterns

P. BroqvistJ. F. BinderA. Pasquarello

Microelectronic Engineering. 2011. 17th International Conference on Insulating Films on Semiconductors, Grenoble, France, 2011-06-21 - 2011-06-24. p. 1467 - 1470. DOI : 10.1016/j.mee.2011.03.047.

Charge Trapping in Substoichiometric Germanium Oxide

J. F. BinderP. BroqvistA. Pasquarello

Microelectronic Engineering. 2011. 17th International Conference on Insultating Films on Semiconductors, Grenoble, France, 2011-06-21 - 2011-06-24. p. 1428 - 1431. DOI : 10.1016/j.mee.2011.03.133.

Structural Composition of First-Neighbor Shells in GeSe2 and GeSe4 Glasses from a First-Principles Analysis of NMR Chemical Shifts

M. KibalchenkoJ. R. YatesC. MassobrioA. Pasquarello

Journal of Physical Chemistry C. 2011. Vol. 115, p. 7755 - 7759. DOI : 10.1021/jp201345e.

Advanced Calculations for Defects in Materials

Wiley, Weinheim, 2011.

Band-edge problem in the theoretical determination of defect energy levels: The O vacancy in ZnO as a benchmark case

A. AlkauskasA. Pasquarello

Physical Review B. 2011. Vol. 84, num. 12, p. 125206. DOI : 10.1103/PhysRevB.84.125206.

Charge transition levels of carbon-, oxygen-, and hydrogen-related defects at the SiC/SiO2 interface through hybrid functionals

F. DevynckA. AlkauskasP. BroqvistA. Pasquarello

Physical Review B. 2011. Vol. 84, p. 235320. DOI : 10.1103/PhysRevB.84.235320.

2010

Formation of substoichiometric GeOx at the Ge-HfO2 interface

P. BroqvistJ. F. BinderA. Pasquarello

Applied Physics Letters. 2010. Vol. 97, num. 20, p. 202908. DOI : 10.1063/1.3518491.

Electron trapping in substoichiometric germanium oxide

J. F. BinderP. BroqvistA. Pasquarello

Applied Physics Letters. 2010. Vol. 97, num. 9, p. 092903. DOI : 10.1063/1.3486175.

A hybrid functional scheme for defect levels and band alignments at semiconductor-oxide interfaces

P. BroqvistA. AlkauskasA. Pasquarello

Physica Status Solidi (a). 2010. 12th International Conference on Formation of Semiconductor Interfaces - From Semiconductor to Nanoscience and Applications with Biology, Weimar, Germany, 2009-07-05 - 2009-07-10. p. 270 - 276. DOI : 10.1002/pssa.200982444.

Alignment of defect energy levels at the Si-SIO2 interface from hybrid density functional calculations

A. AlkauskasP. BroqvistA. Pasquarello

PHYSICS OF SEMICONDUCTORS: 29th International Conference on the Physics of Semiconductors. 2010. 29th International Conference on the Physics of Semiconductors, Rio de Janeiro, Brazil, 2009-07-29 - 2009-08-01. p. 79 - 80. DOI : 10.1063/1.3295562.

Defect levels of the Ge dangling bond defect

P. BroqvistA. AlkauskasA. Pasquarello

PHYSICS OF SEMICONDUCTORS: 29th International Conference on the Physics of Semiconductors. 2010. 29th International Conference on the Physics of Semiconductors, Rio de Janeiro, Brazil, 2009-07-29 - 2009-08-01. p. 81 - 82. DOI : 10.1063/1.3295564.

Energy levels of candidate defects at interfaces SiC/SiO2 interfaces

F. DevynckA. AlkauskasP. BroqvistA. Pasquarello

PHYSICS OF SEMICONDUCTORS: 29th International Conference on the Physics of Semiconductors. 2010. 29th International Conference on the Physics of Semiconductors, Rio de Janeiro, Brazil, 2009-07-29 - 2009-08-01. p. 108 - 109. DOI : 10.1063/1.3295319.

Metal adatoms on graphene and hexagonal boron nitride: Towards rational design of self-assembly templates

O. V. YazyevA. Pasquarello

Physical Review B. 2010. Vol. 82, num. 4, p. 045407. DOI : 10.1103/PhysRevB.82.045407.

Electronic and structural properties at Ge/GeO<inf>2</inf> interfaces: A density-functional investigation

P. BroqvistJ. F. BinderA. Pasquarello

ECS Transactions. 2010. 8th International Symposium on High Dielectric Constant and Other Dielectric Materials for Nanoelectronics and Photonice Held During the 218th Meeting of the Electrochemical-Society (ECS), Las Vegas, NV, 2010-10-11 - 2010-10-15. p. 123 - 132. DOI : 10.1149/1.3481599.

Dangling bond charge transition levels in AlAs, GaAs, and InAs

H.-P. KomsaA. Pasquarello

Applied Physics Letters. 2010. Vol. 97, num. 19, p. 191901. DOI : 10.1063/1.3515422.

Charge transition levels of nitrogen dangling bonds at Si/SiO2 interfaces: A first-principles study

P. DahindenP. BroqvistA. Pasquarello

Physical Review B. 2010. Vol. 81, p. 085331. DOI : 10.1103/PhysRevB.81.085331.

Structural assignments of NMR chemical shifts in GexSe1-x glasses via first-principles calculations for GeSe2, Ge4Se9, and GeSe crystals

M. KibalchenkoJ. R. YatesC. MassobrioA. Pasquarello

Physical Review B. 2010. Vol. 82, num. 2, p. 020202(R). DOI : 10.1103/PhysRevB.82.020202.

First-principles investigation of the relation between structural and NMR parameters in vitreous GeO2

M. KibalchenkoJ. R. YatesA. Pasquarello

Journal of Physics: Condensed Matter. 2010. Vol. 22, p. 145501. DOI : 10.1088/0953-8984/22/14/145501.

Alignment of defect levels and band edges through hybrid functionals: Effect of screening in the exchange term

H.-P. KomsaP. BroqvistA. Pasquarello

Physical Review B. 2010. Vol. 81, num. 20, p. 205118. DOI : 10.1103/PhysRevB.81.205118.

Metal catalyst in CVD growth of carbon nanotubes: role of chemical composition

O. V. YazyevA. Pasquarello

Physics of semiconductors : 29th International Conference, ICPS 29 : Rio de Janeiro, 27 July - 1 August 2008. 2010. 29th International Conference on the Physics of Semiconductors (ICPS), 2009-07-27 - 2009-08-01. p. 543 - 544. DOI : 10.1063/1.3295548.

2009

A hybrid density functional study of lithium in ZnO: Stability, ionization levels, and diffusion

A. CarvalhoA. AlkauskasA. PasquarelloA. K. TagantsevN. Setter

Physical Review B. 2009. Vol. 80, num. 19, p. 195205. DOI : 10.1103/PhysRevB.80.195205.

Hybrid-functional calculations with plane-wave basis sets: Effect of singularity correction on total energies, energy eigenvalues, and defect energy levels

P. BroqvistA. AlkauskasA. Pasquarello

Physical Review B. 2009. Vol. 80, num. 8, p. 085114. DOI : 10.1103/PhysRevB.80.085114.

First principles study of substoichiometric germanium oxides

J. F. BinderP. BroqvistA. Pasquarello

Microelectronic Engineering. 2009. Vol. 86, num. 7-9, p. 1760 - 1762. DOI : 10.1016/j.mee.2009.03.101.

Medium-range structure of vitreous SiO2 obtained through first-principles investigation of vibrational spectra

L. GiacomazziP. UmariA. Pasquarello

Physical Review B. 2009. Vol. 79, num. 6, p. 064202. DOI : 10.1103/PhysRevB.79.064202.

Nitrogen fixation at passivated Fe nanoclusters supported by an oxide surface: Identification of viable reaction routes using density functional calculations

Z. SljivancaninH. BruneA. Pasquarello

Physical Review B. 2009. Vol. 80, num. 7, p. 075407. DOI : 10.1103/PhysRevB.80.075407.

Li-related defects in ZnO : hybrid functional calculations

A. CarvalhoA. AlkauskasA. PasquarelloA. TagantsevN. Setter

Physica B: Condensed Matter. 2009. Vol. 404, num. 23-24, p. 4797 - 4799. DOI : 10.1016/j.physb.2009.08.165.

Atomic structure of the two intermediate phase glasses SiSe4 and GeSe4

C. MassobrioM. CelinoP. S. SalmonR. A. MartinM. Micoulaut  et al.

Physical Review B. 2009. Vol. 79, num. 17, p. 174201. DOI : 10.1103/PhysRevB.79.174201.

First principles investigation of defect energy levels at semiconductor-oxide interfaces: Oxygen vacancies and hydrogen interstitials in the Si-SiO2-HfO2 stack

P. BroqvistA. AlkauskasJ. GodetA. Pasquarello

Journal Of Applied Physics. 2009. Vol. 105, num. 6, p. 061603. DOI : 10.1063/1.3134523.

Atomistic model structure of the Ge(100)-GeO2 interface

P. BroqvistJ. F. BinderA. Pasquarello

Microelectronic Engineering. 2009. Vol. 86, num. 7-9, p. 1589 - 1591. DOI : 10.1016/j.mee.2009.03.087.

Magnetoresistive junctions based on epitaxial graphene and hexagonal boron nitride

O. V. YazyevA. Pasquarello

Physical Review B. 2009. Vol. 80, num. 3, p. 035408. DOI : 10.1103/PhysRevB.80.035408.

Interface between epitaxial graphene and silicon carbide: a first-principl study

J. R. Ruppen

2009

QUANTUM ESPRESSO: a modular and open-source software project for quantum simulations of materials

P. GiannozziS. BaroniN. BoniniM. CalandraR. Car  et al.

Journal of Physics: Condensed Matter. 2009. Vol. 21, num. 39, p. 395502. DOI : 10.1088/0953-8984/21/39/395502.

Band offsets at the Ge/GeO2 interface through hybrid density functionals

P. BroqvistJ. F. BinderA. Pasquarello

Applied Physics Letters. 2009. Vol. 94, num. 14, p. 141911. DOI : 10.1063/1.3116612.

2008

Band gap opening at the 6H-SiC(0001) surface passivated by an epitaxial silicon oxynitride layer: A first-principles investigation

F. DevynckA. Pasquarello

Surface Science. 2008. Vol. 602, num. 18, p. 2989 - 2993. DOI : 10.1016/j.susc.2008.07.036.

Defect levels of dangling bonds in silicon and germanium through hybrid functionals

P. BroqvistA. AlkauskasA. Pasquarello

Physical Review B. 2008. Vol. 78, num. 7, p. 075203. DOI : 10.1103/PhysRevB.78.075203.

Defect energy levels in density functional calculations: Alignment and band gap problem

A. AlkauskasP. BroqvistA. Pasquarello

Physical Review Letters. 2008. Vol. 101, num. 4, p. 046405. DOI : 10.1103/PhysRevLett.101.046405.

Short and intermediate range order in amorphous GeSe2

C. MassobrioA. Pasquarello

Physical Review B. 2008. Vol. 77, num. 14, p. 144207. DOI : 10.1103/PhysRevB.77.144207.

Charge transition levels of the Ge dangling bond defect at Ge/insulator interfaces

P. BroqvistA. AlkauskasA. Pasquarello

Materials Science in Semiconductor Processing. 2008. Vol. 11, num. 5-6, p. 226 - 229. DOI : 10.1016/j.mssp.2008.10.010.

First-principles study of defects at the SiC/SiO2 interface through hybrid functionals

F. Devynck / A. Pasquarello (Dir.)

Lausanne, EPFL, 2008. p. 132. DOI : 10.5075/epfl-thesis-4100.

Carbon diffusion in CVD growth of carbon nanotubes on metal nanoparticles

O. V. YazyevA. Pasquarello

Physica Status Solidi B-Basic Solid State Physics. 2008. Vol. 245, num. 10, p. 2185 - 2188. DOI : 10.1002/pssb.200879573.

Charge state of the O-2 molecule during silicon oxidation through hybrid functional calculations

A. AlkauskasP. BroqvistA. Pasquarello

Physical Review B. 2008. Vol. 78, num. 16, p. 161305. DOI : 10.1103/PhysRevB.78.161305.

Band offsets at semiconductor-oxide interfaces from hybrid density-functional calculations

A. AlkauskasP. BroqvistF. DevynckA. Pasquarello

Physical Review Letters. 2008. Vol. 101, num. 10, p. 106802. DOI : 10.1103/PhysRevLett.101.106802.

Band alignments and defect levels in Si-HfO2 gate stacks: Oxygen vacancy and Fermi-level pinning

P. BroqvistA. AlkauskasA. Pasquarello

Applied Physics Letters. 2008. Vol. 92, num. 13, p. 132911. DOI : 10.1063/1.2907704.

First-principles theory of infrared absorption spectra at surfaces and interfaces: Application to the Si(100): H2O surface

F. GiustinoA. Pasquarello

Physical Review B. 2008. Vol. 78, num. 7, p. 075307. DOI : 10.1103/PhysRevB.78.075307.

Effect of metal elements in catalytic growth of carbon nanotubes

O. V. YazyevA. Pasquarello

Physical Review Letters. 2008. Vol. 100, num. 15, p. 156102. DOI : 10.1103/PhysRevLett.100.156102.

Band offsets at the Si/SiO2 interface from many-body perturbation theory

R. ShaltafG. M. RignaneseX. GonzeF. GiustinoA. Pasquarello

Physical Review Letters. 2008. Vol. 100, num. 18, p. 186401. DOI : 10.1103/PhysRevLett.100.186401.

2007

Semiconductor defects at the 4H-SiC(0001)/SiO2 interface

F. DevynckA. Pasquarello

Physica B: Condensed Matter. 2007. Vol. 401, p. 556 - 559. DOI : 10.1016/j.physb.2007.09.020.

Migration of oxygen vacancy in HfO2 and across the HfO2/SiO2 interface: A first-principles investigation

N. CapronP. BroqvistA. Pasquarello

Applied Physics Letters. 2007. Vol. 91, p. 192905. DOI : 10.1063/1.2807282.

Effect of improved band-gap description in density functional theory on defect energy levels in alpha-quartz

A. AlkauskasA. Pasquarello

Physica B: Condensed Matter. 2007. Vol. 401, p. 670 - 673. DOI : 10.1016/j.physb.2007.09.048.

First principles investigation of defects at interfaces between silicon and amorphous high-kappa oxides

P. BroqvistA. Pasquarello

Microelectronic Engineering. 2007. Vol. 84, num. 9-10, p. 2022 - 2027. DOI : 10.1016/j.mee.2007.04.075.

Band gaps and dielectric constants of amorphous hafnium silicates: A first-principles investigation

P. BroqvistA. Pasquarello

Applied Physics Letters. 2007. Vol. 90, num. 8, p. 082907. DOI : 10.1063/1.2643300.

Amorphous hafnium silicates: structural, electronic and dielectric properties

P. BroqvistA. Pasquarello

Microelectronic Engineering. 2007. Vol. 84, num. 9-10, p. 2416 - 2419. DOI : 10.1016/j.mee.2007.04.013.

Structural and electronic properties of an abrupt 4H-SiC(0001)/SiO2 interface model: Classical molecular dynamics simulations and density functional calculations

F. DevynckF. GiustinoP. BroqvistA. Pasquarello

Physical Review B. 2007. Vol. 76, num. 7, p. 075351. DOI : 10.1103/PhysRevB.76.075351.

Proton-induced fixed positive charge at the Si(100)-SiO2 interface

J. GodetF. GiustinoA. Pasquarello

Physical Review Letters. 2007. Vol. 99, p. 126102. DOI : 10.1103/PhysRevLett.99.126102.

Modeling of atomic-scale processes during silicon oxidation: charge state of the O2 molecule

A. AlkauskasA. Pasquarello

MRS Proceedings. 2007. 2007 MRS Spring Meeting, San Francisco, California, US, 2007-04-09 - 2007-04-09.

Microscopic origin of concentration fluctuations over intermediate range distances in network-forming disordered systems

C. MassobrioA. Pasquarello

Physical Review B. 2007. Vol. 75, p. 014206. DOI : 10.1103/PhysRevB.75.014206.

Proton Diffusion in Amorphous SiO2 and Hafnium Silicate by Ab Initio Molecular Dynamics

J. GodetA. Pasquarello

PHYSICS OF SEMICONDUCTORS: 28th International Conference on the Physics of Semiconductors - ICPS 2006. 2007. PHYSICS OF SEMICONDUCTORS: 28th International Conference on the Physics of Semiconductors - ICPS 2006, Vienna, Austria, 2006-07-24 - 2006-07-28. p. 195 - 196. DOI : 10.1063/1.2729836.

Protons at the Si-SiO2 interface: a first principle investigation

J. GodetA. Pasquarello

Microelectronic Engineering. 2007. Vol. 84, num. 9-10, p. 2035 - 2038. DOI : 10.1016/j.mee.2007.04.122.

First-principles investigation of the structural and vibrational properties of vitreous GeSe2

L. GiacomazziC. MassobrioA. Pasquarello

Physical Review B. 2007. Vol. 75, num. 17, p. 174207. DOI : 10.1103/PhysRevB.75.174207.

Core-level photoelectron spectroscopy probing local strain at silicon surfaces and interfaces

O. V. YazyevA. Pasquarello

Physics of Semiconductors, Pts a and B. 2007. Vol. 893, p. 7 - 8.

Hyper-Raman spectrum of vitreous silica from first principles

P. UmariA. Pasquarello

Physical Review Letters. 2007. Vol. 98, num. 17, p. 176402. DOI : 10.1103/PhysRevLett.98.176402.

Electronic properties of an epitaxial silicon oxynitride layer on a 6H-SiC(0001) surface: A first-principles investigation

F. DevynckZ. SljivancaninA. Pasquarello

Applied Physics Letters. 2007. Vol. 91, num. 6, p. 061930. DOI : 10.1063/1.2769949.

First principles vibrational spectra of tetrahedrally-bonded glasses : SiO2, GeO2 and GeSe2

L. Giacomazzi / A. Pasquarello (Dir.)

Lausanne, EPFL, 2007. p. 138. DOI : 10.5075/epfl-thesis-3738.

Hydrogen in Si(100)-SiO2-HfO2 gate stacks: Relevant charge states and their location

J. GodetP. BroqvistA. Pasquarello

Applied Physics Letters. 2007. Vol. 91, num. 26, p. 262901. DOI : 10.1063/1.2828027.

Structural properties of amorphous GeSe2

C. MassobrioA. Pasquarello

Journal of Physics: Condensed Matter. 2007. Vol. 19, num. 41, p. 415111. DOI : 10.1088/0953-8984/19/41/415111.

Structural and electronic properties of oxygen vacancies in monoclinic HfO2

P. BroqvistA. Pasquarello

Materials Research Society Symposium Proceedings. 2007. Characterization of oxide/semiconductor interfaces for CMOS technologies, San Francisco, California, 2007-04-09 - 2007-04-13. p. 108. DOI : 10.1557/PROC-0996-H01-08.

Vibrational spectra of vitreous SiO2 and vitreous GeO2 from first principles

L. GiacomazziA. Pasquarello

Journal of Physics: Condensed Matter. 2007. Vol. 19, num. 41, p. 415112. DOI : 10.1088/0953-8984/19/41/415112.

Atomistic model of the 4H(0001)SiC-SiO2 interface: structural and electronic properties

F. DevynckF. GiustinoA. Pasquarello

PHYSICS OF SEMICONDUCTORS: 28th International Conference on the Physics of Semiconductors - ICPS 2006. 2007. PHYSICS OF SEMICONDUCTORS: 28th International Conference on the Physics of Semiconductors - ICPS 2006, Vienna, Austria, 2006-07-24 - 2006-07-28. p. 307 - 308. DOI : 10.1063/1.2729890.

Alignment of hydrogen-related defect levels at the Si-SiO2 interface

A. AlkauskasA. Pasquarello

Physica B: Condensed Matter. 2007. Vol. 401, p. 546 - 549. DOI : 10.1016/j.physb.2007.09.018.

2006

Origin of fine structure in Si 2p photoelectron spectra at silicon surfaces and interfaces

O. V. YazyevA. Pasquarello

Physical Review Letters. 2006. Vol. 96, num. 15, p. 157601. DOI : 10.1103/PhysRevLett.96.157601.

Dielectric and infrared properties of ultrathin SiO2 layers on Si(100)

F. GiustinoA. Pasquarello

Defects in High-k Gate Dielectric Stacks: Nano-Electronic Semiconductor Devices. 2006. Vol. 220, p. 385 - 396. DOI : 10.1007/1-4020-4367-8_31.

Mixed Wannier-Bloch functions for electrons and phonons in periodic systems

F. GiustinoA. Pasquarello

Physical Review Letters. 2006. Vol. 96, num. 21, p. 216403. DOI : 10.1103/PhysRevLett.96.216403.

Vibrational spectra of vitreous germania from first-principles

L. GiacomazziP. UmariA. Pasquarello

Physical Review B. 2006. Vol. 74, num. 15, p. 155208. DOI : 10.1103/PhysRevB.74.155208.

Ion scattering simulations of the Si(100)-SiO2 interface

A. BongiornoA. PasquarelloM. S. HybertsenL. C. Feldman

Physical Review B. 2006. Vol. 74, num. 7, p. 075316. DOI : 10.1103/PhysRevB.74.075316.

Oxygen vacancy in monoclinic HfO2: A consistent interpretation of trap assisted conduction, direct electron injection, and optical absorption experiments

P. BroqvistA. Pasquarello

Applied Physics Letters. 2006. Vol. 89, num. 26, p. 262904. DOI : 10.1063/1.2424441.

Comment on "fraction of boroxol rings in vitreous boron oxide from a first-principles analysis of Raman and NMR spectra" - Umari and Pasquarello reply

P. UmariA. Pasquarello

Physical Review Letters. 2006. Vol. 96, num. 19, p. 199702. DOI : 10.1103/PhysRevLett.96.199702.

Proton diffusion mechanism in amorphous SiO2

J. GodetA. Pasquarello

Physical Review Letters. 2006. Vol. 97, num. 15, p. 155901. DOI : 10.1103/PhysRevLett.97.155901.

2005

Modelling of paramagnetic trivalent silicon defect centres in amorphous silica and at Si-SiO2 interfaces

A. StirlingA. Pasquarello

Journal of Physics: Condensed Matter. 2005. Vol. 17, num. 21, p. S2099 - S2113. DOI : 10.1088/0953-8984/17/21/006.

Density functional theory with finite electric field

P. UmariA. Pasquarello

International Journal of Quantum Chemistry. 2005. Vol. 101, num. 6, p. 666 - 670. DOI : 10.1002/qua.20324.

Atomically controlled interfaces for future nanoelectronics

A. PasquarelloA. M. Stoneham

Journal of Physics: Condensed Matter. 2005. Vol. 17, num. 21, p. V1 - V5. DOI : 10.1088/0953-8984/17/21/N01.

Infrared properties of ultrathin oxides on Si(100)

F. GiustinoA. Pasquarello

Microelectronic Engineering. 2005. Vol. 80, p. 420 - 423. DOI : 10.1016/j.mee.2005.04.025.

Supported nanoclusters: Preadsorbates tuning catalytic activity

Z. SljivancaninA. Pasquarello

Physical Review B. 2005. Vol. 71, num. 8, p. 081403. DOI : 10.1103/PhysRevB.71.081403.

Ab initio study of charged states of H in amorphous SiO2

J. GodetA. Pasquarello

Microelectronic Engineering. 2005. Vol. 80, p. 288 - 291. DOI : 10.1016/j.mee.2005.04.082.

Atomic-scale modelling of kinetic processes occurring during silicon oxidation

A. BongiornoA. Pasquarello

Journal of Physics: Condensed Matter. 2005. Vol. 17, num. 21, p. S2051 - S2063. DOI : 10.1088/0953-8984/17/21/002.

Infrared properties of the Si-SiO2 interface from first principles

F. Giustino / A. Pasquarello (Dir.)

Lausanne, EPFL, 2005. p. 128. DOI : 10.5075/epfl-thesis-3259.

Fraction of boroxol rings in vitreous boron oxide from a first-principles analysis of Raman and NMR spectra

P. UmariA. Pasquarello

Physical Review Letters. 2005. Vol. 95, num. 13, p. 137401. DOI : 10.1103/PhysRevLett.95.137401.

O-2 oxidation reaction at the Si(100)-SiO2 interface: A first-principles investigation

A. BongiornoA. Pasquarello

Journal of Materials Science. 2005. Vol. 40, num. 12, p. 3047 - 3050. DOI : 10.1007/s10853-005-2663-7.

Infrared spectra at surfaces and interfaces from first principles: Evolution of the spectra across the Si(100)-SiO2 interface

F. GiustinoA. Pasquarello

Physical Review Letters. 2005. Vol. 95, num. 18, p. 187402. DOI : 10.1103/PhysRevLett.95.187402.

Electronic and dielectric properties of a suboxide interlayer at the silicon-oxide interface in MOS devices

F. GiustinoA. Pasquarello

Surface Science. 2005. Vol. 586, num. 1-3, p. 183 - 191. DOI : 10.1016/j.susc.2005.05.012.

Equivalent oxide thickness of a thin oxide interlayer in gate insulator stacks on silicon

F. GiustinoA. BongiornoA. Pasquarello

Applied Physics Letters. 2005. Vol. 86, p. 192901. DOI : 10.1063/1.1923185.

Atomic-scale modelling of the Si(100)-SiO2 interface

F. GiustinoA. BongiornoA. Pasquarello

Physics of Semiconductors, Pts a and B. 2005. Vol. 772, p. 423 - 426.

Modelling of dielectric constants of amorphous Zr silicates

G. M. RignaneseA. Pasquarello

Journal of Physics: Condensed Matter. 2005. Vol. 17, p. S2089 - S2098. DOI : 10.1088/0953-8984/17/21/005.

First-principles codes for computational crystallography in the Quantum-ESPRESSO package

S. ScandoloP. GiannozziC. CavazzoniS. de GironcoliA. Pasquarello  et al.

Zeitschrift Fur Kristallographie. 2005. Vol. 220, num. 5-6, p. 574 - 579. DOI : 10.1524/zkri.220.5.574.65062.

Abrupt model interface for the 4H(1000)SiC-SiO2 interface

F. DevynckF. GiustinoA. Pasquarello

Microelectronic Engineering. 2005. Vol. 80, p. 38 - 41. DOI : 10.1016/j.mee.2005.04.021.

Erratum: Titanium oxides and silicates as high-K-kappa dielectrics: A first principles investigation (vol 101, pg 793, 2005)

G. M. RignaneseX. RocquefelteX. GonzeA. Pasquarello

International Journal of Quantum Chemistry. 2005. Vol. 103, num. 3, p. 354 - 354. DOI : 10.1002/qua.20643.

Theory of atomic-scale dielectric permittivity at insulator interfaces

F. GiustinoA. Pasquarello

Physical Review B. 2005. Vol. 71, p. 144104. DOI : 10.1103/PhysRevB.71.144104.

Medium-range structural properties of vitreous germania obtained through first-principles analysis of vibrational spectra

L. GiacomazziP. UmariA. Pasquarello

Physical Review Letters. 2005. Vol. 95, num. 7, p. 075505. DOI : 10.1103/PhysRevLett.95.075505.

Titanium oxides and silicates as high-kappa dielectrics: A first-principles investigation

G. M. RignaneseX. RocquefelteX. GonzeA. Pasquarello

International Journal of Quantum Chemistry. 2005. Vol. 101, num. 6, p. 793 - 801. DOI : 10.1002/qua.20339.

An electronegativity-induced spin repulsion effect

A. StirlingA. Pasquarello

The Journal of Physical Chemistry A. 2005. Vol. 109, num. 37, p. 8385 - 8390. DOI : 10.1021/jp053335h.

Atomistic models of the Si(100)-SiO2 interface: structural, electronic and dielectric properties

F. GiustinoA. BongiornoA. Pasquarello

Journal of Physics: Condensed Matter. 2005. Vol. 17, num. 21, p. S2065 - S2074. DOI : 10.1088/0953-8984/17/21/003.

Infrared and Raman spectra of disordered materials from first principles

P. UmariA. Pasquarello

Diamond and Related Materials. 2005. Vol. 14, num. 8, p. 1255 - 1261. DOI : 10.1016/j.diamond.2004.12.007.

Comment on "Structural analysis of the SiO2/Si(100) interface by means of photoelectron diffraction"

A. BongiornoA. Pasquarello

Physical Review Letters. 2005. Vol. 94, num. 18, p. 189601. DOI : 10.1103/PhysRevLett.94.189601.

Ab initio molecular dynamics of liquid hydrogen chloride

V. DuboisA. Pasquarello

The Journal of Chemical Physics. 2005. Vol. 122, num. 11, p. 114512. DOI : 10.1063/1.1869972.

2004

Atomistic model structure of the Si(100)-SiO2 interface from a synthesis of experimental data

A. BongiornoA. Pasquarello

Applied Surface Science. 2004. Vol. 234, num. 1-4, p. 190 - 196. DOI : 10.1016/j.apsusc.2004.05.020.

Dielectric susceptibility of dipolar molecular liquids by ab initio molecular dynamics: application to liquid HCl

V. DuboisP. UmariA. Pasquarello

Chemical Physics Letters. 2004. Vol. 390, num. 1-3, p. 193 - 198. DOI : 10.1016/j.cplett.2004.04.021.

Electronic structure at realistic Si(100)-SiO2 interfaces

F. GiustinoA. BongiornoA. Pasquarello

Japanese Journal of Applied Physics Part 1-Regular Papers Brief Communications & Review Papers. 2004. Vol. 43, num. 11B, p. 7895 - 7898. DOI : 10.1143/JJAP.43.7895.

Nitrogen adsorption on a supported iron nanocluster

Z. SljivancaninA. Pasquarello

Vacuum. 2004. Vol. 74, num. 2, p. 173 - 177. DOI : 10.1016/j.vacuum.2003.12.117.

Dielectric effect of a thin SiO2 interlayer at the interface between silicon and high-k oxides

F. GiustinoP. UmariA. Pasquarello

Microelectronic Engineering. 2004. Vol. 72, num. 1-4, p. 299 - 303. DOI : 10.1016/j.mee.2004.01.011.

Ab initio calculations of the structural, electronic and dynamical properties of high-kappa dielectrics

G. M. RignaneseX. GonzeA. Pasquarello

High-K Gate Dielectrics; CRC Press, 2004. p. 431 - 466.

First-principles investigation of high-kappa dielectrics: Comparison between the silicates and oxides of hafnium and zirconium (vol B 69, art no 184301, 2004)

G. M. RignaneseX. GonzeG. C. JunK. J. ChoA. Pasquarello

Physical Review B. 2004. Vol. 70, num. 9, p. 099903. DOI : 10.1103/PhysRevB.70.099903.

Reaction of the oxygen molecule at the Si(100)-SiO2 interface during silicon oxidation

A. BongiornoA. Pasquarello

Physical Review Letters. 2004. Vol. 93, p. 086102. DOI : 10.1103/PhysRevLett.93.086102.

Multiscale modeling of oxygen diffusion through the oxide during silicon oxidation

A. BongiornoA. Pasquarello

Physical Review B. 2004. Vol. 70, num. 19, p. 195312. DOI : 10.1103/PhysRevB.70.195312.

Atomic-scale investigation of the dielectric screening at the interface between silicon and its oxide

F. GiustinoA. Pasquarello

Fundamentals of Novel Oxide/Semiconductor Interfaces; 2004. p. 3 - 7.

DOI : 10.1557/PROC-786-E6.28.

Modeling phase separation in nonstoichiometric silica

V. M. BurlakovG. A. D. BriggsA. P. SuttonA. BongiornoA. Pasquarello

Physical Review Letters. 2004. Vol. 93, num. 13, p. 135501. DOI : 10.1103/PhysRevLett.93.135501.

Density-functional perturbational theory for dielectric tensors in the ultrasoft pseudopotential scheme

P. UmariX. GonzeA. Pasquarello

Physical Review B. 2004. Vol. 69, num. 23, p. 235102. DOI : 10.1103/PhysRevB.69.235102.

Silicon crystal distortions at the Si(100)-SiO2 interface from analysis of ion-scattering

A. BongiornoA. PasquarelloM. S. HybertsenL. C. Feldman

Microelectronic Engineering. 2004. Vol. 72, num. 1-4, p. 197 - 200. DOI : 10.1016/j.mee.2003.12.036.

First-principles investigation of high-kappa dielectrics: Comparison between the silicates and oxides of hafnium and zirconium

G. M. RignaneseX. GonzeG. JunK. J. ChoA. Pasquarello

Physical Review B. 2004. Vol. 69, num. 18, p. 184301. DOI : 10.1103/PhysRevB.69.184301.

Noncollinear magnetism in liquid oxygen: A first-principles molecular dynamics study

T. OdaA. Pasquarello

Physical Review B. 2004. Vol. 70, num. 13, p. 134402. DOI : 10.1103/PhysRevB.70.134402.

Finite electric field in density functional calculations with periodic boundary conditions

P. UmariA. Pasquarello

Computational Materials Science. 2004. Vol. 30, num. 1-2, p. 116 - 119. DOI : 10.1016/j.commatsci.2004.01.018.

Charge fluctuations and concentration fluctuations at intermediate-range distances in the disordered network-forming materials SiO2, SiSe2, and GeSe2

C. MassobrioM. CelinoA. Pasquarello

Physical Review B. 2004. Vol. 70, p. 174202. DOI : 10.1103/PhysRevB.70.174202.

2003

Polarizability and dielectric constant in density-functional supercell calculations with discrete k-point samplings

P. UmariA. Pasquarello

Physical Review B. 2003. Vol. 68, num. 8, p. 085114. DOI : 10.1103/PhysRevB.68.085114.

Transition structure at the Si(100)-SiO2 interface

A. BongiornoA. PasquarelloM. S. HybertsenL. C. Feldman

Physical Review Letters. 2003. Vol. 90, num. 18, p. 186101. DOI : 10.1103/PhysRevLett.90.186101.

Evidence of concentration fluctuations in disordered network-forming systems: the case of GeSe4 and SiSe2

C. MassobrioM. CelinoA. Pasquarello

Journal of Physics: Condensed Matter. 2003. Vol. 15, num. 16, p. S1537 - S1546. DOI : 10.1088/0953-8984/15/16/303.

Simulation of atomistic processes during silicon oxidation

A. Bongiorno / A. Pasquarello (Dir.)

Lausanne, EPFL, 2003. p. 125. DOI : 10.5075/epfl-thesis-2788.

Dynamical monopoles and dipoles in a condensed molecular system: The case of liquid water

A. PasquarelloR. Resta

Physical Review B. 2003. Vol. 68, num. 17, p. 174301. DOI : 10.1103/PhysRevB.68.174302.

Dependence of the O-2 diffusion rate on oxide thickness during silicon oxidation

A. BongiornoA. Pasquarello

Journal of Physics: Condensed Matter. 2003. Vol. 15, num. 16, p. S1553 - S1560. DOI : 10.1088/0953-8984/15/16/305.

Concentration of small ring structures in vitreous silica from a first-principles analysis of the Raman spectrum

P. UmariX. GonzeA. Pasquarello

Physical Review Letters. 2003. Vol. 90, num. 2, p. 027401. DOI : 10.1103/PhysRevLett.90.027401.

Supported Fe nanoclusters: Evolution of magnetic properties with cluster size

Z. SljivancaninA. Pasquarello

Physical Review Letters. 2003. Vol. 90, num. 24, p. 247202. DOI : 10.1103/PhysRevLett.90.247202.

Absence of charge-charge correlations at intermediate-range distances in disordered network-forming materials

C. MassobrioA. Pasquarello

Physical Review B. 2003. Vol. 68, num. 2, p. 020201. DOI : 10.1103/PhysRevB.68.020201.

Atomic processes during silicon oxidation: Oxygen diffusion through the oxide layer

A. BongiornoA. Pasquarello

Physics of Semiconductors 2002 Proceedings of the 26th International Conference, Edinburgh, 29 July to 2 August 2002. 2003. Physics of Semiconductors 2002, Edinburgh, UK, 2002-07-29 - 2002-08-02.

Raman spectra of disordered oxides from first principles

P. Umari / A. Pasquarello (Dir.)

Lausanne, EPFL, 2003. p. 124. DOI : 10.5075/epfl-thesis-2774.

Structural and magnetic correlations in liquid oxygen: an ab initio molecular dynamics study

T. OdaA. Pasquarello

Journal of Physics: Condensed Matter. 2003. Vol. 15, num. 1, p. S89 - S94. DOI : 10.1088/0953-8984/15/1/310.

First-principles analysis of the Raman spectrum of vitreous silica: comparison with the vibrational density of states

P. UmariA. Pasquarello

Journal of Physics: Condensed Matter. 2003. Vol. 15, num. 16, p. S1547 - S1552. DOI : 10.1088/0953-8984/15/16/304.

New evidence for reconstruction at the Si(100)-SiO2 interface from analysis of ion scattering

A. BongiornoA. PasquarelloM. S. HybertsenL. C. Feldman

Physics of Semiconductors 2002 Proceedings of the 26th International Conference, Edinburgh, 29 July to 2 August 2002. 2003. Physics of Semiconductors 2002, Edinburgh, UK, 2002-07-29 - 2002-08-02.

Dielectric discontinuity at interfaces in the atomic-scale limit: Permittivity of ultrathin oxide films on silicon

F. GiustinoP. UmariA. Pasquarello

Physical Review Letters. 2003. Vol. 91, num. 26, p. 267601. DOI : 10.1103/PhysRevLett.91.267601.

Car-Parrinello Molecular Dynamics in a Finite Homogeneous Electric Field

P. UmariA. Pasquarello

Fundamental Physics of Ferroelectrics 2003: Williamsburg, Virginia, February 2003. 2003. Fundamental physics of ferroelectrics 2003, Williamsburgh, Virginia, US, 2003-02-02 - 2003-02-05. p. 269 - 275. DOI : 10.1063/1.1609962.

Atomistic structure of the Si(100)-SiO2 interface: A synthesis of experimental data

A. BongiornoA. Pasquarello

Applied Physics Letters. 2003. Vol. 83, num. 7, p. 1417 - 1419. DOI : 10.1063/1.1604470.

Etude de propriétés structurales et dynamiques par dynamique moléculaire ab initio : Application aux verres et aux liquides vitreux

A. Pasquarello

Journal De Physique IV. 2003. Vol. 111, p. 373 - 393. DOI : 10.1051/jp4:2002831.

2002

Atomic structure at the Si(001)-SiO2 interface: from the interpretation of Si 2p core-level shifts to a model structure

A. BongiornoA. Pasquarello

Materials Science and Engineering B-Solid State Materials for Advanced Technology. 2002. Vol. 96, num. 2, p. 102 - 106. DOI : 10.1016/S0921-5107(02)00299-4.

Ab initio molecular dynamics investigation of the structure and the noncollinear magnetism in liquid oxygen: Occurrence of O-4 molecular units

T. OdaA. Pasquarello

Physical Review Letters. 2002. Vol. 89, num. 19, p. 197204. DOI : 10.1103/PhysRevLett.89.197204.

Pressure-induced structural changes in liquid SiO2 from ab initio simulations

A. TraveP. TangneyS. ScandoloA. PasquarelloR. Car

Physical Review Letters. 2002. Vol. 89, num. 24, p. 245504. DOI : 10.1103/PhysRevLett.89.245504.

Ab initio molecular dynamics in a finite homogeneous electric field

P. UmariA. Pasquarello

Physical Review Letters. 2002. Vol. 89, num. 15, p. 157602. DOI : 10.1103/PhysRevLett.89.157602.

Energetics of oxygen species in crystalline and amorphous SiO2: a first-principles investigation

A. BongiornoA. Pasquarello

Solid-State Electronics. 2002. Vol. 46, num. 11, p. 1873 - 1878. DOI : 10.1016/S0038-1101(02)00158-2.

First-principles modeling of paramagnetic Si dangling-bond defects in amorphous SiO2

A. StirlingA. Pasquarello

Physical Review B. 2002. Vol. 66, num. 24, p. 245201. DOI : 10.1103/PhysRevB.66.245201.

Modeling of Si 2p core-level shifts at Si-(ZrO2)(x)(SiO2)(1-x) interfaces

F. GiustinoA. BongiornoA. Pasquarello

Applied Physics Letters. 2002. Vol. 81, num. 22, p. 4233 - 4235. DOI : 10.1063/1.1526172.

A generalization of the effective-charge concept: Dynamical multipoles in molecular solids and liquids

A. PasquarelloR. Resta

Fundamental Physics of Ferroelectrics 2002. 2002. Fundamental Physics of Ferroelectrics 2002, Washington D.C., US, 2002-02-03 - 2002-02-06. p. 198 - 207. DOI : 10.1063/1.1499568.

Modeling of the Raman spectrum of vitreous silica: concentration of small ring structures

P. UmariA. Pasquarello

Physica B: Condensed Matter. 2002. Vol. 316, p. 572 - 574. DOI : 10.1016/S0921-4526(02)00576-8.

Dielectric constants of Zr silicates: A first-principles study

G. M. RignaneseF. DetrauxX. GonzeA. BongiornoA. Pasquarello

Physical Review Letters. 2002. Vol. 89, num. 11, p. 117601. DOI : 10.1103/PhysRevLett.89.117601.

First-principles electronic structure study of Ti-PTCDA contacts

A. PalmaA. PasquarelloR. Car

Physical Review B. 2002. Vol. 65, num. 15, p. 155314. DOI : 10.1103/PhysRevB.65.155314.

Oxygen diffusion through the disordered oxide network during silicon oxidation

A. BongiornoA. Pasquarello

Physical Review Letters. 2002. Vol. 88, num. 12, p. 125901. DOI : 10.1103/PhysRevLett.88.125901.

2001

𝑠⁢𝑝²⁢/𝑠⁢𝑝³ hybridization ratio in amorphous carbon from C 1⁢𝑠 core-level shifts: X-ray photoelectron spectroscopy and first-principles calculation

R. HaerleE. RiedoA. PasquarelloA. Baldereschi

Physical Review B. 2001. Vol. 65, num. 4, p. 045101. DOI : 10.1103/PhysRevB.65.045101.

Atomic dynamics during silicon oxidation

A. PasquarelloM. S. HybertsenR. Car

Fundamental Aspects of Silicon Oxidation; 2001. p. 107 - 125.

DOI : 10.1007/978-3-642-56711-7_6.

First-principles simulation of vitreous systems

A. Pasquarello

Current Opinion in Solid State & Materials Science. 2001. Vol. 5, num. 6, p. 503 - 508. DOI : 10.1016/S1359-0286(02)00011-6.

First-principles study of structural, electronic, dynamical, and dielectric properties of zircon

G. M. RignaneseX. GonzeA. Pasquarello

Physical Review B. 2001. Vol. 63, num. 10, p. 104305. DOI : 10.1103/PhysRevB.63.104305.

First-principle study of C 1s core-level shifts in amorphous carbon

R. HaerleA. PasquarelloA. Baldereschi

Computational Materials Science. 2001. Vol. 22, num. 1-2, p. 67 - 72. DOI : 10.1016/S0927-0256(01)00167-7.

Origin of the first sharp diffraction peak in the structure factor of disordered network-forming systems: Layers or voids?

C. MassobrioA. Pasquarello

Journal of Chemical Physics. 2001. Vol. 114, num. 18, p. 7976 - 7979. DOI : 10.1063/1.1365108.

Nitrogen bonding configurations at nitrided Si(001) surfaces and Si(001)-SiO2 interfaces: A first-principles study of core-level shifts

G. M. RignaneseA. Pasquarello

Physical Review B. 2001. Vol. 63, num. 7, p. 75307. DOI : 10.1103/PhysRevB.63.075307.

Raman scattering intensities in alpha-quartz: A first-principles investigation

P. UmariA. PasquarelloA. Dal Corso

Physical Review B. 2001. Vol. 63, num. 9, p. 95305. DOI : 10.1103/PhysRevB.63.094305.

Oxygen species in SiO2: a first-principles investigation

A. BongiornoA. Pasquarello

Microelectronic Engineering. 2001. Vol. 59, num. 1-4, p. 167 - 172. DOI : 10.1016/S0167-9317(01)00661-X.

Nitrogen 1s core-level shifts at the NH3 saturated Si(100)-2 x 1 surface: a first-principles study

G. M. RignaneseA. Pasquarello

Surface Science. 2001. Vol. 490, num. 1-2, p. L614 - L618. DOI : 10.1016/S0039-6028(01)01343-7.

Interpretation of N 1s core-level shifts at nitrided Si(001)-SiO2 interfaces: A first-principles study

G. RignaneseA. Pasquarello

MRS Proceedings. 2001. International workshop on device technology : Alternatives to SiO2 as Gate Dielectric for Future Si-Based Microelectronics, Porto Alegre, Brazil, 2001-09-03 - 2001-09-05.

Oxygen species in amorphous SiO2: Relative energetics and concentration of equilibrium sites

A. BongiornoA. Pasquarello

MRS Proceedings. 2001. International workshop on device technology : Alternatives to SiO2 as Gate Dielectric for Future Si-Based Microelectronics, Porto Alegre, Brazil, 2001-09-03 - 2001-09-05.

First solvation shell of the Cu(II) aqua ion: Evidence for fivefold coordination

A. PasquarelloI. PetriP. S. SalmonO. PariselR. Car  et al.

Science. 2001. Vol. 291, num. 5505, p. 856 - 859. DOI : 10.1126/science.291.5505.856.

Short- and intermediate-range structure of liquid GeSe2

C. MassobrioA. PasquarelloR. Car

Physical Review B. 2001. Vol. 64, num. 14, p. 144205. DOI : 10.1103/PhysRevB.64.144205.

First-principles study of dynamical and dielectric properties of tetragonal zirconia

G. M. RignaneseF. DetrauxX. GonzeA. Pasquarello

Physical Review B. 2001. Vol. 64, num. 13, p. 134301. DOI : 10.1103/PhysRevB.64.134301.

2000

Atomic structure and hyperfine spectrum of Pb-type defects at Si-Sio(2) interfaces: An ab-initio investigation

A. StirlingA. PasquarelloJ. C. CharlierR. Car

Physics and Chemistry of Sio2 and the Si-Sio2 Interface - 4. 2000. Vol. 2000, num. 2, p. 283 - 293.

Formation energy of threefold coordinated oxygen in SiO2 systems

A. Pasquarello

Applied Surface Science. 2000. Vol. 166, num. 1-4, p. 451 - 454. DOI : 10.1016/S0169-4332(00)00467-0.

Chemisorption pathways and Si 2p core-level shifts for the interaction of spherosiloxane clusters with Si(100): Implications for photoemission in Si/SiO2 systems

K. RaghavachariA. PasquarelloJ. EngM. S. Hybertsen

Applied Physics Letters. 2000. Vol. 76, num. 26, p. 3873 - 3875. DOI : 10.1063/1.126805.

Concentration fluctuations on intermediate range distances in liquid GeSe2: the critical role of ionicity

C. MassobrioA. PasquarelloR. Car

Computational Materials Science. 2000. Vol. 17, num. 2-4, p. 115 - 121. DOI : 10.1016/S0927-0256(00)00007-0.

First-principles study of NH3 exposed Si(001)2x1: Relation between N 1s core-level shifts and atomic structure

G. M. RignaneseA. Pasquarello

Applied Physics Letters. 2000. Vol. 76, num. 5, p. 553 - 555. DOI : 10.1063/1.125815.

Breakdown of intermediate-range order in liquid GeSe2 at high temperatures

C. MassobrioF. H. M. van RoonA. PasquarelloS. W. De Leeuw

Journal of Physics: Condensed Matter. 2000. Vol. 12, num. 46, p. L697 - L704. DOI : 10.1088/0953-8984/12/46/102.

Model interface between silicon and disordered SiO2

A. PasquarelloM. S. Hybertsen

Proceedings of the Fourth International Symposium on the Physics and Chemistry of SiO2 and the Si-SiO2 Interface, Toronto, Canada, May 15-18, 2000. 2000. Fourth International Symposium on the Physics and Chemistry of SiO2 and the Si-SiO2 Interface, Toronto, Canada, 2000-05-15 - 2000-05-18. p. 271 - 282.

Vibrational amplitudes in vitreous silica

A. Pasquarello

Physical Review B. 2000. Vol. 61, num. 6, p. 3951 - 3959. DOI : 10.1103/PhysRevB.61.3951.

Si-O-Si bond-angle distribution in vitreous silica from first-principles Si-29 NMR analysis

F. MauriA. PasquarelloB. G. PfrommerY. G. YoonS. G. Louie

Physical Review B. 2000. Vol. 62, num. 8, p. R4786 - R4789. DOI : 10.1103/PhysRevB.62.R4786.

Validity of the bond-energy picture for the energetics at Si-SiO2 interfaces

A. BongiornoA. Pasquarello

Physical Review B. 2000. Vol. 62, num. 24, p. 16326 - 16329. DOI : 10.1103/PhysRevB.62.R16326.

Dangling bond defects at Si-SiO2 interfaces: Atomic structure of the P-b1 center

A. StirlingA. PasquarelloJ. C. CharlierR. Car

Physical Review Letters. 2000. Vol. 85, num. 13, p. 2773 - 2776. DOI : 10.1103/PhysRevLett.85.2773.

1999

Number of independent partial structure factors for a disordered n-component system

D. L. PriceA. Pasquarello

Physical Review B. 1999. Vol. 59, num. 1, p. 5 - 7. DOI : 10.1103/PhysRevB.59.5.

Network transformation processes during oxidation of silicon

A. Pasquarello

Microelectronic Engineering. 1999. Vol. 48, num. 1-4, p. 89 - 94. DOI : 10.1016/S0167-9317(99)00345-7.

Intermediate range order and bonding character in disordered network-forming systems

C. MassobrioA. PasquarelloR. Car

Journal of the American Chemical Society. 1999. Vol. 121, num. 12, p. 2943 - 2944. DOI : 10.1021/ja9808447.

1998

Interpretation of the vibrational spectra of vitreous silica

A. Pasquarello

Proceedings of the VII Italian-Swiss Workshop Advances in Computational Materials Science - II = Atti del VII Workshop Italiano-Svizzero: Progresso della scienza dei materiali computazionale - II. 1998. 7th Italian-Swiss Workshop "Advances in Computational Materials Science - II", Santa Margherita di Pula, 1997-09-19 - 1997-09-23. p. 13 - 18.

Interface structure between silicon and its oxide by first-principles molecular dynamics

A. PasquarelloM. S. HybertsenR. Car

Nature. 1998. Vol. 396, num. 6706, p. 58 - 60. DOI : 10.1038/23908.

Fully unconstrained approach to noncollinear magnetism: Application to small Fe clusters

T. OdaA. PasquarelloR. Car

Physical Review Letters. 1998. Vol. 80, num. 16, p. 3622 - 3625. DOI : 10.1103/PhysRevLett.80.3622.

Cu++ and Li+ interaction with polyethylene oxide by ab initio molecular dynamics

A. PalmaA. PasquarelloG. CiccottiR. Car

Journal of Chemical Physics. 1998. Vol. 108, num. 23, p. 9933 - 9936. DOI : 10.1063/1.476432.

Disordered SiO2 systems : a first-principles investigation

A. Pasquarello

Présentation des travaux des trois lauréats. 1998. num. 10.

Core-level shifts in Si(001)-SiO2 systems: The value of first-principle investigations

A. PasquarelloM. S. HybertsenG. M. RignaneseR. Car

Fundamental Aspects of Ultrathin Dielectrics on Si-Based Devices; 1998. p. 89 - 102.

DOI : 10.1007/978-94-011-5008-8_7.

Structure of liquid GexSe1-x at the stiffness threshold composition

M. J. HayeC. MassobrioA. PasquarelloA. De VitaS. W. De Leeuw  et al.

Physical Review B. 1998. Vol. 58, num. 22, p. 14661 - 14664. DOI : 10.1103/PhysRevB.58.R14661.

Investigation of the structural and acidic properties of bulk offretite using first principles molecular dynamics

J. WeberL. CampanaA. SelloniA. PasquarelloI. Papai  et al.

Thermodynamic Modeling and Materials Data Engineering; Springer, 1998. p. 129 - 134. - 3540644458.

DOI : 10.1007/978-3-642-72207-3_13.

Identification of Raman defect lines as signatures of ring structures in vitreous silica

A. PasquarelloR. Car

Physical Review Letters. 1998. Vol. 80, p. 5145 - 5147. DOI : 10.1103/PhysRevLett.80.5145.

A first principles study of small Cu-n clusters based on local-density and generalized-gradient approximations to density functional theory

C. MassobrioA. PasquarelloA. Dal Corso

Computational Materials Science. 1998. Vol. 10, num. 1-4, p. 463 - 467. DOI : 10.1016/S0927-0256(97)00124-9.

Microscopic structure of liquid GeSe2: The problem of concentration fluctuations over intermediate range distances

C. MassobrioA. PasquarelloR. Car

Physical Review Letters. 1998. Vol. 80, num. 11, p. 2342 - 2345. DOI : 10.1103/PhysRevLett.80.2342.

Dynamics of structural relaxation upon Rydberg excitation of an impurity in an Ar crystal

S. JimenezA. PasquarelloR. CarM. Chergui

Chemical Physics. 1998. Vol. 233, num. 2-3, p. 343 - 352. DOI : 10.1016/S0301-0104(98)00154-2.

Structural and electronic properties of small Cu-n clusters using generalized-gradient approximations within density functional theory

C. MassobrioA. PasquarelloA. Dal Corso

Journal of Chemical Physics. 1998. Vol. 109, num. 16, p. 6626 - 6630. DOI : 10.1063/1.477313.

Dynamic structure factor of vitreous silica from first principles: Comparison to neutron-inelastic-scattering experiments

A. PasquarelloJ. SarntheinR. Car

Physical Review B. 1998. Vol. 57, num. 22, p. 14133 - 14140. DOI : 10.1103/PhysRevB.57.14133.

1997

Origin of the high-frequency doublet in the vibrational spectrum of vitreous SiO2

J. SarntheinA. PasquarelloR. Car

Science. 1997. Vol. 275, num. 5308, p. 1925 - 1927. DOI : 10.1126/science.275.5308.1925.

Structure and hyperfine parameters of E'(1) centers in a-quartz and in vitreous SiO2

M. BoeroA. PasquarelloJ. SarntheinR. Car

Physical Review Letters. 1997. Vol. 78, num. 5, p. 887 - 890. DOI : 10.1103/PhysRevLett.78.887.

Dynamical charge tensors and infrared spectrum of amorphous SiO2

A. PasquarelloR. Car

Physical Review Letters. 1997. Vol. 79, num. 9, p. 1766 - 1769. DOI : 10.1103/PhysRevLett.79.1766.

Nitrogen incorporation at Si(001)-SiO2 interfaces: Relation between N 1s core-level shifts and microscopic structure

G. M. RignaneseA. PasquarelloJ. C. CharlierX. GonzeR. Car

Physical Review Letters. 1997. Vol. 79, num. 25, p. 5174 - 5177. DOI : 10.1103/PhysRevLett.79.5174.

Density-functional perturbation theory for lattice dynamics with ultrasoft pseudopotentials

A. DalCorsoA. PasquarelloA. Baldereschi

Physical Review B. 1997. Vol. 56, num. 18, p. 11369 - 11372. DOI : 10.1103/PhysRevB.56.R11369.

1996

Theory of Si 2p core-level shifts at the Si(001)-SiO2 interface

A. PasquarelloM. S. HybertsenR. Car

Physical Review B. 1996. Vol. 53, num. 16, p. 10942 - 10950. DOI : 10.1103/PhysRevB.53.10942.

Interpretation of photoelectron spectra in Cu-n(-) clusters including thermal and final-state effects: The case of Cu-7(-)

C. MassobrioA. PasquarelloR. Car

Physical Review B. 1996. Vol. 54, num. 12, p. 8913 - 8918. DOI : 10.1103/PhysRevB.54.8913.

Comparison of structurally relaxed models of the Si(001)-SiO2 interface based on different crystalline oxide forms

A. PasquarelloM. S. HybertsenR. Car

Applied Surface Science. 1996. Vol. 104, p. 317 - 322. DOI : 10.1016/S0169-4332(96)00164-X.

First-principles studies of Cu clusters

C. MassobrioA. PasquarelloR. Car

Surface Review and Letters. 1996. Vol. 3, num. 1, p. 287 - 291. DOI : 10.1142/S0218625X9600053X.

Generalized-gradient approximations to density-functional theory: A comparative study for atoms and solids

A. DalCorsoA. PasquarelloA. BaldereschiR. Car

Physical Review B. 1996. Vol. 53, num. 3, p. 1180 - 1185. DOI : 10.1103/PhysRevB.53.1180.

Structurally relaxed models of the Si(001)-SiO2 interface

A. PasquarelloM. S. HybertsenR. Car

Applied Physics Letters. 1996. Vol. 68, num. 5, p. 625 - 627. DOI : 10.1063/1.116489.

Si 2p core-level shifts in small molecules: A first principles study

A. PasquarelloM. S. HybertsenR. Car

Physica Scripta. 1996. Vol. T66, p. 118 - 120. DOI : 10.1088/0031-8949/1996/T66/018.

Spherosiloxane H8Si8O12 clusters on Si(001): First-principles calculation of Si 2p core-level shifts

A. PasquarelloM. S. HybertsenR. Car

Physical Review B. 1996. Vol. 54, num. 4, p. R2339. DOI : 10.1103/PhysRevB.54.R2339.

First-principles study of Si 2p core-level shifts at water and hydrogen covered Si(001)2x1 surfaces

A. PasquarelloM. S. HybertsenR. Car

Journal of Vacuum Science & Technology B. 1996. Vol. 14, num. 4, p. 2809 - 2811. DOI : 10.1116/1.588837.

1995

Magnetic field perturbation of a shallow acceptor and its bound exciton confined in GaAs/AlGaAs quantum wells.

P. O. HoltzQ. X. A. ZhaoC. FerreiraB. MonemarA. Pasquarello  et al.

Proceedings of the 22nd International Conference on the Physics of Semiconductors. 1995. 22nd International Conference on the Physics of Semiconductors, Vancouver, Canada, August 15-19, 1994. p. 2251 - 2254.

First Principles Study of Photoelectron-Spectra of Cu-N(-) Clusters

C. MassobrioA. PasquarelloR. Car

Physical Review Letters. 1995. Vol. 75, num. 11, p. 2104 - 2107. DOI : 10.1103/PhysRevLett.75.2104.

Acceptor energy levels in GaAs/AlGaAs quantum wells in the presence of an external magnetic field.

Q. X. ZhaoP. O. HoltzA. PasquarelloB. MonemarM. Willander

Proceedings. 1995. 22nd International Conference on the Physics of Semiconductors.

Structural and Electronic-Properties of Liquid and Amorphous Sio2 - an Ab-Initio Molecular-Dynamics Study

J. SarntheinA. PasquarelloR. Car

Physical Review Letters. 1995. Vol. 74, num. 23, p. 4682 - 4685. DOI : 10.1103/PhysRevLett.74.4682.

Model of Vitreous Sio2 Generated by an Ab-Initio Molecular-Dynamics Quench from the Melt

J. SarntheinA. PasquarelloR. Car

Physical Review B. 1995. Vol. 52, num. 17, p. 12690 - 12695. DOI : 10.1103/PhysRevB.52.12690.

First-principles study of microscopic models of the Si(001)-SiO2 interface.

A. PasquarelloM. S. HybertsenR. Car

Proceedings of the 22nd International Conference on the Physics of Semiconductors. 1995. 22nd International Conference on the Physics of Semiconductors. p. 612 - 615.

Si 2p Core-Level Shifts at the Si(001) Sio2 Interface - a First-Principles Study

A. PasquarelloM. S. HybertsenR. Car

Physical Review Letters. 1995. Vol. 74, num. 6, p. 1024 - 1027. DOI : 10.1103/PhysRevLett.74.1024.

Structural and Electronic-Properties of Small Copper Clusters - a First Principles Study

C. MassobrioA. PasquarelloR. Car

Chemical Physics Letters. 1995. Vol. 238, num. 4-6, p. 215 - 221. DOI : 10.1016/0009-2614(95)00394-J.

1994

Magnetic-Properties of the S-Like Bound Hole States in Gaas/Alxga1-Xas Quantum-Wells

Q. X. ZhaoP. O. HoltzA. PasquarelloB. MonemarA. C. Ferreira  et al.

Physical Review B. 1994. Vol. 49, num. 15, p. 10794 - 10797. DOI : 10.1103/PhysRevB.49.10794.

Infrared-Absorption Spectra of Accepters Confined in Gaas/Alxga1-Xas Quantum-Wells in the Presence of an External Magnetic-Field

Q. X. ZhaoA. PasquarelloP. O. HoltzB. MonemarM. Willander

Physical Review B. 1994. Vol. 50, num. 15, p. 10953 - 10957. DOI : 10.1103/PhysRevB.50.10953.

Magnetooptical Studies of Acceptors Confined in GaAs/AlGaAs Quantum-Wells

P. O. HoltzQ. X. ZhaoB. MonemarA. PasquarelloM. Sundaram  et al.

Physics and Applications of Defects in Advanced Semiconductors; 1994. p. 73 - 78.

DOI : 10.1557/PROC-325-73.

1st Principles Molecular-Dynamics Calculation of the Structure and Acidity of a Bulk Zeolite

L. CampanaA. SelloniJ. WeberA. PasquarelloI. Papai  et al.

Chemical Physics Letters. 1994. Vol. 226, num. 3-4, p. 245 - 250. DOI : 10.1016/0009-2614(94)00731-4.

Theoretical Calculations of Shallow Acceptor States in Gaas Alxga1-Xas Quantum-Wells in the Presence of an External Magnetic-Field

Q. X. ZhaoP. O. HoltzA. PasquarelloB. MonemarM. Willander

Physical Review B. 1994. Vol. 50, num. 4, p. 2393 - 2398. DOI : 10.1103/PhysRevB.50.2393.

Magnetooptical Studies of Acceptors Confined in Gaas/Alxga1-Xas Quantum-Wells

P. O. HoltzQ. X. ZhaoA. C. FerreiraB. MonemarA. Pasquarello  et al.

Physical Review B. 1994. Vol. 50, num. 7, p. 4901 - 4904. DOI : 10.1103/PhysRevB.50.4901.

Magnetism of Carbon Clusters

R. C. HaddonA. Pasquarello

Physical Review B. 1994. Vol. 50, num. 22, p. 16459 - 16463. DOI : 10.1103/PhysRevB.50.16459.

Diffusion Mechanism of Cu Adatoms on a Cu(001) Surface

C. LeeG. T. BarkemaM. BreemanA. PasquarelloR. Car

Surface Science. 1994. Vol. 306, num. 3, p. L575 - L578. DOI : 10.1016/0039-6028(94)90069-8.

Infrared-Absorption Frequencies and Oscillator-Strengths of Accepters Confined in Gaas/Algaas Quantum-Wells

Q. X. ZhaoB. MonemarP. O. HoltzM. WillanderA. Pasquarello

Applied Physics Letters. 1994. Vol. 65, num. 26, p. 3365 - 3367. DOI : 10.1063/1.112393.

1993

Ab initio molecular dynamics: application to liquid copper

K. LaasonenA. Pasquarello

Computational Materials Science. 1993. Vol. 1, num. 4, p. 419 - 427. DOI : 10.1016/0927-0256(93)90040-T.

Car-Parrinello Molecular-Dynamics with Vanderbilt Ultrasoft Pseudopotentials

K. LaasonenA. PasquarelloR. CarC. LeeD. Vanderblit

Physical Review B. 1993. Vol. 47, num. 16, p. 10142 - 10153. DOI : 10.1103/PhysRevB.47.10142.

Ring Currents in Topologically Complex-Molecules - Application to C60, C70, and Their Hexa-Anions

A. PasquarelloM. SchluterR. C. Haddon

Physical Review A. 1993. Vol. 47, num. 3, p. 1783 - 1789. DOI : 10.1103/PhysRevA.47.1783.

Application of Variational Techniques to Time-Dependent Perturbation-Theory

A. PasquarelloA. Quattropani

Physical Review B. 1993. Vol. 48, num. 8, p. 5090 - 5094. DOI : 10.1103/PhysRevB.48.5090.

First-Principles Molecular Dynamics

G. GalliA. Pasquarello

Computer Simulation in Chemical Physics. 1993. NATO Advanced Study Institute, Alghero, Sardinia, September 1992. p. 261 - 313. DOI : 10.1007/978-94-011-1679-4_8.

1992

Hole subbands in quantum wells: Comparison between theory and hot-electron-acceptor-luminescence experiments

U. EkenbergL. C. AndreaniA. Pasquarello

Physical Review B. 1992. Vol. 46, num. 4, p. 2625 - 2627. DOI : 10.1103/PhysRevB.46.2625.

Resonance width of the light-hole exciton in GaAs-Ga$_{1-x}$Al$_x$As quantum wells

A. PasquarelloL. Andreani

Optics of Excitons in Confined Systems. 1992. International meeting on the optics of excitons in confined systems, Giardini Naxos, Italy, 1991-09-24 - 1991-09-27. p. 69 - 72.

Ring Currents in Icosahedral C60

A. PasquarelloM. SchluterR. C. Haddon

Science. 1992. Vol. 257, num. 5077, p. 1660 - 1661. DOI : 10.1126/science.257.5077.1660.

Effective-State Approach to 2nd-Order Perturbation-Theory

A. PasquarelloL. C. AndreaniN. BinggeliA. Quattropani

Europhysics Letters - European Physical Society Letters (EPL). 1992. Vol. 17, num. 5, p. 387 - 392. DOI : 10.1209/0295-5075/17/5/002.

Abinitio Molecular-Dynamics for D-Electron Systems - Liquid Copper at 1500-K

A. PasquarelloK. LaasonenR. CarC. Y. LeeD. Vanderbilt

Physical Review Letters. 1992. Vol. 69, num. 13, p. 1982 - 1985. DOI : 10.1103/PhysRevLett.69.1982.

1991

Multiphoton transitions in solids

A. Pasquarello / A. Quattropani (Dir.)

Lausanne, EPFL, 1991. p. 139. DOI : 10.5075/epfl-thesis-924.

Variational Calculation of Fano Linewidth - Application to Excitons in Quantum-Wells

A. PasquarelloL. C. Andreani

Physical Review B. 1991. Vol. 44, num. 7, p. 3162 - 3167. DOI : 10.1103/PhysRevB.44.3162.

Infrared Transitions between Shallow Acceptor States in Gaas-Ga1-Xalxas Quantum-Wells

S. FraizzoliA. Pasquarello

Physical Review B. 1991. Vol. 44, num. 3, p. 1118 - 1127. DOI : 10.1103/PhysRevB.44.1118.

High Exciton Binding-Energies in Gaas/Gaaias Quantum-Wells

L. C. AndreaniA. Pasquarello

Superlattices and Microstructures. 1991. Vol. 9, num. 1, p. 1 - 4. DOI : 10.1016/0749-6036(91)90081-2.

Polarization Dependence of Multiphoton Transitions

A. PasquarelloA. Quattropani

Physical Review B. 1991. Vol. 43, num. 5, p. 3837 - 3846. DOI : 10.1103/PhysRevB.43.3837.

Complex Pattern of Impurity States in Shallow Semiconductor Quantum-Wells

A. PasquarelloG. Bastard

Europhysics Letters - European Physical Society Letters (EPL). 1991. Vol. 15, num. 4, p. 447 - 451. DOI : 10.1209/0295-5075/15/4/014.

Polarization Dependence of 2-Photon Transitions in Quantum-Wells

A. PasquarelloA. Quattropani

Nuovo Cimento Della Societa Italiana Di Fisica D-Condensed Matter Atomic Molecular and Chemical Physics Fluids Plasmas Biophysics. 1991. Vol. 13, num. 3, p. 337 - 342. DOI : 10.1007/BF02456961.

Excitonic Effects on the 2-Photon Transition Rate in Quantum-Wells

A. PasquarelloA. Quattropani

Superlattices and Microstructures. 1991. Vol. 9, num. 2, p. 157 - 160. DOI : 10.1016/0749-6036(91)90273-T.

Shallow Impurities in Gaas-Ga1-Xalxas Quantum-Wells

S. FraizzoliA. Pasquarello

Physica Scripta. 1991. Vol. T39, p. 182 - 187. DOI : 10.1088/0031-8949/1991/T39/028.

1990

Two-photon transitions to excitons in quantum wells

A. PasquarelloA. Quattropani

Physical Review B. 1990. Vol. 42, num. 14, p. 9073 - 9079. DOI : 10.1103/PhysRevB.42.9073.

Infrared Transitions between Shallow Acceptor States in GaAs/Ga$_{1-x}$Al$_{x}$As Quantum-Wells

S. FraizzoliA. Pasquarello

20th International Conference on the Physics of Semiconductors, Vols 1-3. 1990. p. 1389 - 1392.

Binding energies of ground and excited states of shallow acceptors in GaAs/Ga1-xAlxAs quantum wells

S. FraizzoliA. Pasquarello

Physical Review B. 1990. Vol. 42, num. 8, p. 5349 - 5352. DOI : 10.1103/PhysRevB.42.5349.

2-Photon Transitions to Excitons in Quantum-Wells

A. PasquarelloA. Quattropani

20th International Conference on the Physics of Semiconductors, Vols 1-3. 1990. p. 1509 - 1512.

Accurate Theory of Excitons in Gaas-Ga1-Xalxas Quantum-Wells

L. C. AndreaniA. Pasquarello

Physical Review B. 1990. Vol. 42, num. 14, p. 8928 - 8938. DOI : 10.1103/PhysRevB.42.8928.

2-Photon Transitions with Time-Delayed Radiation Pulses

A. PasquarelloA. Quattropani

Applied Laser Spectroscopy. 1990. Vol. 241, p. 109 - 115.

Effect of Continuum States on 2-Photon Absorption in Quantum-Wells

A. PasquarelloA. Quattropani

Physical Review B. 1990. Vol. 41, num. 18, p. 12728 - 12734. DOI : 10.1103/PhysRevB.41.12728.

Interpretation of 3-Photon Spectra in Alkali-Halides

A. PasquarelloL. C. Andreani

Physical Review B. 1990. Vol. 41, num. 17, p. 12230 - 12235. DOI : 10.1103/PhysRevB.41.12230.

Effect of Biaxial Strain on Acceptor-Level Energies in Inyga1-Yas/Alxga1-Xas (on Gaas) Quantum-Wells - Comment

L. C. AndreaniS. FraizzoliA. Pasquarello

Physical Review B. 1990. Vol. 42, num. 12, p. 7641 - 7642. DOI : 10.1103/PhysRevB.42.7641.

1989

Theory of Excitons in GaAs-Ga$_{1-x}$Al$_x$As Quantum Wells Including Valence Band Mixing

L. C. AndreaniA. Pasquarello

Superlattices and Microstructures. 1989. Vol. 5, num. 1, p. 59 - 63. DOI : 10.1016/0749-6036(89)90068-2.

Binding energies of p-type acceptor states in GaAs-Ga1-xAlxAs quantum wells

A. PasquarelloL. C. AndreaniR. Buczko

Helvetica Physica Acta. 1989. Vol. 62, p. 872.

Binding-Energies of Excited Shallow Acceptor States in GaAs/Ga$_{1-x}$Al$_x$As Quantum Wells

A. PasquarelloL. C. AndreaniR. Buczko

Physical Review B. 1989. Vol. 40, num. 8, p. 5602 - 5618. DOI : 10.1103/PhysRevB.40.5602.

Electronic structure and optical properties of superlattices

L. AndreaniA. Pasquarello

Lecture notes of the School "Highlights on Spectroscopies of Semiconductors and Insulators. 1989. Highlights on Spectroscopies of Semiconductors and Insulators, Castro Marino Lecce, August 31, September 12th, 1987.

One-Dimensional Random Potentials Allowing for Extended States

A. CrisantiC. FlesiaA. PasquarelloA. Vulpiani

Journal of Physics: Condensed Matter. 1989. Vol. 1, num. 47, p. 9509 - 9512. DOI : 10.1088/0953-8984/1/47/019.

Symmetry properties and selection rules of excitons in quantum wells

L. C. AndreaniF. BassaniA. Pasquarello

Symmetry in nature; Scuola Normale Superiore , Pisa, 1989.

1988

Gauge-Invariant 2-Photon Transitions in Quantum Wells

A. PasquarelloA. Quattropani

Physical Review B. 1988. Vol. 38, num. 9, p. 6206 - 6210. DOI : 10.1103/PhysRevB.38.6206.

Effect of Subband Coupling on Exciton Binding-Energies and Oscillator-Strengths in GaAs-Ga$_{1-x}$Al$_x$As Quantum Wells

L. C. AndreaniA. Pasquarello

Europhysics Letters - European Physical Society Letters (EPL). 1988. Vol. 6, num. 3, p. 259 - 264. DOI : 10.1209/0295-5075/6/3/012.

1987

Hole subbands in strained GaAs-Ga1-xAlxAs quantum wells: Exact solution of the effective-mass equation

L. C. AndreaniA. PasquarelloF. Bassani

Physical Review B. 1987. Vol. 36, num. 11, p. 5887 - 5894. DOI : 10.1103/PhysRevB.36.5887.

Enseignement et PhD

Doctorant·es actuel·les

Giorgio Palermo

A dirigé les thèses EPFL de

Paolo Umari, Angelo Bongiorno, Feliciano Giustino, Luigi Giacomazzi, Fabien Devynck, Jan Felix Binder, Davide Colleoni, Zhendong Guo, Patrick Gono, Thomas Bischoff, Stefano Falletta

Cours

Computer simulation of physical systems I

PHYS-403

Les deux sujets principaux du cours sont la dynamique moléculaire classique et la méthode Monte Carlo.

Physique générale : quantique

PHYS-207(c)

Le cours traite les ondes électromagnétiques (optique géométrique et optique physique) et donne une introduction à la physique quantique.