Anna Fontcuberta i Morral

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Professeure associée +41 21 693 73 94

MXC 330 (Bâtiment MXC)
Station 12
CH-1015 Lausanne

Unité: SMX-ENS


MXC 330 (Bâtiment MXC)
Station 12
CH-1015 Lausanne

+41 21 693 73 94
Unité: LMSC2
Local: MXC 330

Unité: CMI-CD

Unité: CIME-CD

Données administratives


Autres publications

Peter Krogstrup, Henrik Ingerslev J�rgensen, Martin Heiss,Olivier Demichel,Jeppe V. Holm,Martin Aagesen,Jesper Nygard & Anna Fontcuberta i Morral
Nature Photonics, doi:10.1038/nphoton.2013.32
Single-nanowire solar cells beyond the Shockley�Queisser limit
M. Heiss, Y. Fontana, A. Gustafsson, G. W�st, C. Magen, D. D. O�Regan, J. W. Luo, B. Ketterer, S. Conesa-Boj, A. V. Kuhlmann, J. Houel, E. Russo-Averchi, J. R. Morante, M. Cantoni, N. Marzari, J. Arbiol, A. Zunger, R. J. Warburton & A. Fontcuberta i Morral
Nature materials, doi:10.1038/nmat3557
Self-assembled quantum dots in a nanowire system for quantum photonics
B. Ketterer, M. Heiss, E. Uccelli, J. Arbiol, A. Fontcuberta i Morral
ACS Nano
Untangling the Electronic Band Structure of Wurtzite GaAs Nanowires by Resonant Raman Spectroscopy
E. Uccelli, J. Arbiol, C. Magen, P. Krogstrup, E. Russo-Averchi, M. Heiss, G. Mugny, F. Morier-Genoud, J. Nygard, J.R. Morante, A. Fontcuberta i Morral
Nano Letters asap (2011)
Three-dimensional twinning of self-catalyzed GaAs nanowires on Si substrates
Bernt Ketterer, Jordi Arbiol, Anna Fontcuberta i Morral
Phys. Rev. B (2011), accepted
Phonon confinement and plasmon-phonon interaction in nanowire based quantum wells
E. Uccelli, J. Arbiol, J.R. Morante, A. Fontcuberta i Morral
ACS Nano, DOI: 10.1021/nn101604k
InAs Quantum Dot Arrays Decorating the Facets of GaAs Nanowires
J. Dufouleur*, C. Colombo*, T. Garma, B. Ketterer, E. Uccelli, M. Nicotra, A. Fontcuberta i Morral
Nano Lett, 10, 1734 (2010)
p-doping mechanisms in catalyst-free GaAs nanowires
I. Zardo, S. Conesa-Boj, F. Peiro, J. R. Morante, J. Arbiol, E. Uccelli, G. Abstreiter and A. Fontcuberta i Morral
Physical Review B 80, 245324 (2009)
Raman Spectroscopy of wurtzite and zinc-blende GaAs nanowires: Polarization dependence, selection rules, and strain effects
C. Colombo, M. Heiβ, M. Graetzel, A. Fontcuberta i Morral
Appl. Phys. Lett. 94, 173108 (2009)
Gallium arsenide p-i-n radial structures for photovoltaic applications
D. Spirkoska, J. Arbiol, A. Gustafsson, S. Conesa-Boj, F. Glas, I. Zardo, M. Heigoldt, M. H. Gass, A. L. Bleloch, S. Estrade, M. Kaniber, J. Rossler, F. Peiro, J. R. Morante, G. Abstreiter, L. Samuelson and A. Fontcuberta i Morral
Physical Review B 80, 245325 (2009)
Structural and optical properties of high quality zinc-blende/wurtzite GaAs nanowire heterostructures
Matthias Heigoldt, Jordi Arbiol, Danĉe Spirkoska, Josep M. Rebled, S�nia Conesa-Boj, Gerhard Abstreiter, Francesca Peir�, Joan R. Morante, Anna Fontcuberta i Morral
J. Mater. Chem. 19, 840-848 (2009)
Long Range Epitaxial Growth of Prismatic Heterostructures on the facets of Catalyst-Free GaAs Nanowires
Anna Fontcuberta i Morral, Dance Spirkoska, Jordi Arbiol, Matthias Heigoldt, Joan Ramon Moranteand Gerhard Abstreiter
Small, 4, 899-903 (2008)
Prismatic Quantum Heterostructures Synthesized on Molecular-Beam Epitaxy GaAs Nanowires
C. Colombo, D. Spirkoska, M. Frimmer, G. Abstreiter, A. Fontcuberta i Morral
Physical Review B 77, 155326 (2008)
Growth mechanisms of Ga-assisted catalyst-free MBE GaAs nanowires
A. Fontcuberta i Morral, C. Colombo, J. Arbiol, J.R. Morante, G. Abstreiter
Appl. Phys. Lett. 92, 063112 (2008)
Nucleation mechanism of gallium-assisted molecular beam epitaxy growth of gallium arsenide nanowires
A . Fontcuberta i Morral, J. Arbiol, J.D. Prades, A. Cirera, J.R. Morante
Adv. Mater. 19, 1347-1351 (2007)
Synthesis of silicon nanowires with wurtzite crystalline structure by standard Chemical Vapour Deposition
9. J. Arbiol, B. Kalache, P. Roca i Cabarrocas, J. R. Morante, A. Fontcuberta i Morral
Nanotechnology 18 (2007) 305606
Influence of Cu as a catalyst on the properties of silicon nanowires synthesized by the Vapor-Solid-Solid mechanism
B. Kalache, P. Roca i Cabarrocas,A. Fontcuberta i Morral
Jap. J. Appl. Phys. 45 , L109 (2006)
Observation of incubation times in the nucleation of silicon nanowires obtained by the Vapor-Liquid-Solid method
A. Fontcuberta i Morral, J. M. Zahler, S. P. Ahrenkiel, M. Wanlass, Harry. A. Atwater
Appl. Phys. Lett. 83, 5413 (2003)
InGaAs/InP double heterostructures on In/Si templates fabricated by wafer bonding and hydrogen induced exfoliation of InP
17. C-S. Cojocaru, J-M. Padovani, T. Wade, C. Mandoli, G. Jaskierowicz, J-E. Wegrowe, A. Fontcuberta i Morral, D. Pribat
Nanoletters, 5, 675 (2005)
Horizontal Conformal Anodic Oxidation Of Aluminium Thin Films
A. Fontcuberta i Morral, J. Bertomeu, P.Roca i Cabarrocas
Materials Science and Engineering B69-70, 559 (2000)
The role of hydrogen in the formation of microcrystalline silicon

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