Christian Enz
+41 21 695 45 30
EPFL › STI › STI-SMT › SMT-ENS
Expertise
Low-Power Analog and RF IC Design
MEMS-Based IC Design
Wireless Sensor Networks
Semiconductor Device Modeling
Noise in Devices and Circuits
Inexact and Error Tolerant Circuits and Systems
MEMS-Based IC Design
Wireless Sensor Networks
Semiconductor Device Modeling
Noise in Devices and Circuits
Inexact and Error Tolerant Circuits and Systems
Links
Expertise
Low-Power Analog and RF IC Design
MEMS-Based IC Design
Wireless Sensor Networks
Semiconductor Device Modeling
Noise in Devices and Circuits
Inexact and Error Tolerant Circuits and Systems
MEMS-Based IC Design
Wireless Sensor Networks
Semiconductor Device Modeling
Noise in Devices and Circuits
Inexact and Error Tolerant Circuits and Systems
Links
Publications représentatives
An ultralow-power UHF transceiver integrated in a standard digital CMOS process: Architecture and receiver.
Porret, A. S., T. Melly, et al.
Published in Ieee Journal of Solid-State Circuits 36(3): 452-466., 2001 in
Addition to
Melly, T., A. S. Porret, et al.
Published in An analysis of flicker noise rejection in low-power and low-voltage CMOS mixers. Ieee Journal of Solid-State Circuits 37(8): 1090-1090., 2002 in
A 1.5-V 75-dB dynamic range third-order G(m)-C filter integrated in a 0.18-mu m standard digital CMOS process.
Yodprasit, U. and C. C. Enz
Published in Ieee Journal of Solid-State Circuits 38(7): 1189-1197., 2003 in
A 5.4dBm 42mW 2.4GHz CMOS BAW-based Quasi-Direct Conversion Transmitter
2010. p. 498 - 499. DOI : 10.1109/ISSCC.2010.5433865.Detailed Analysis of a Phase ADC
2010. p. 4273 - 4276. DOI : 10.1109/ISCAS.2010.5537552.WiseNET: An Ultra Low-Power Concept for Wireless Sensor Networks
Technisches Messen - Platform für Methoden, Systems und Anwendungen in der Messtechnik. 2010.A Multiband Concurrent Sampling based RF Front End for Biotelemetry Applications
2010. International Symposium on Circuits and Systems Nano-Bio Circuit Fabrics and Systems (ISCAS 2010), Paris, FRANCE, May 30-Jun 02, 2010. p. 2948 - 2951. DOI : 10.1109/ISCAS.2010.5538036.Analysis of Ultralow-Power Asynchronous ADCs
2010. International Symposium on Circuits and Systems Nano-Bio Circuit Fabrics and Systems (ISCAS 2010), Paris, FRANCE, May 30-Jun 02, 2010. p. 3593 - 3596. DOI : 10.1109/ISCAS.2010.5537806.A Narrowband Multi-Channel 2.4 GHz MEMS-Based Transceiver
IEEE Journal of Solid-State Circuits. 2009. DOI : 10.1109/JSSC.2008.2007447.A Concurrent Quadrature Sub-Sampling Mixer for Multiband Receivers
2009. European Conference on Circuit Theory Design, Antalya, TURKEY, Aug 23-27, 2009. p. 271 - 274. DOI : 10.1109/ECCTD.2009.5274924.Analysis of a Novel BAW-based Power Amplifier
2009. p. 375 - 378. DOI : 10.1109/ECCTD.2009.5274992.RF Front-End for Autonomous Low Power Wireless Sensor Nodes
2009A Novel Complex Gm-C IF Sub-Sampling Mixer
2009. European Conference on Circuit Theory Design, Antalya, TURKEY, Aug 23-27, 2009. p. 29 - 32. DOI : 10.1109/ECCTD.2009.5275140.TD: Trends in Communication Circuits and Systems
2008. p. 520 - 521. DOI : 10.1109/ISSCC.2008.4523286.Impact of Lateral Asymmetry of MOSFETs on the Gate and Drain Noise Correlation
IEEE Transactions on Electron Devices. 2008. DOI : 10.1109/TED.2008.925935.A Low-Power Programmable Dynamic Frequency Divider
2008. p. 370 - 373.SE2: MEMS for Frequency Synthesis and Wireless RF Communications (or Life without Quartz Crystal)
2008. p. 14 - 15. DOI : 10.1109/ISSCC.2008.4523040.A Short Story of the EKV MOS Transistor Model
IEEE Solid-State Circuits Newsletter. 2008. DOI : 10.1109/N-SSC.2008.4785778.EKV3 MOSFET Compact Model Documentation, Model Version 301.02
2008A low-power 2.4 GHz CMOS receiver using BAW resonators
Lausanne, EPFL, 2008. DOI : 10.5075/epfl-thesis-4141.Ultra Low-Power MEMS-based Radio for Wireless Sensor Networks
FTFC. 2008.Compact Modeling of Noise in Nonuniform Channel MOSFET
2008.A 5.4dBm 42mW 2.4GHz CMOS BAW-based Quasi-Direct Conversion Transmitter
2010. p. 498 - 499. DOI : 10.1109/ISSCC.2010.5433865.Detailed Analysis of a Phase ADC
2010. p. 4273 - 4276. DOI : 10.1109/ISCAS.2010.5537552.WiseNET: An Ultra Low-Power Concept for Wireless Sensor Networks
Technisches Messen - Platform für Methoden, Systems und Anwendungen in der Messtechnik. 2010.A Multiband Concurrent Sampling based RF Front End for Biotelemetry Applications
2010. International Symposium on Circuits and Systems Nano-Bio Circuit Fabrics and Systems (ISCAS 2010), Paris, FRANCE, May 30-Jun 02, 2010. p. 2948 - 2951. DOI : 10.1109/ISCAS.2010.5538036.Analysis of Ultralow-Power Asynchronous ADCs
2010. International Symposium on Circuits and Systems Nano-Bio Circuit Fabrics and Systems (ISCAS 2010), Paris, FRANCE, May 30-Jun 02, 2010. p. 3593 - 3596. DOI : 10.1109/ISCAS.2010.5537806.A Narrowband Multi-Channel 2.4 GHz MEMS-Based Transceiver
IEEE Journal of Solid-State Circuits. 2009. DOI : 10.1109/JSSC.2008.2007447.A Concurrent Quadrature Sub-Sampling Mixer for Multiband Receivers
2009. European Conference on Circuit Theory Design, Antalya, TURKEY, Aug 23-27, 2009. p. 271 - 274. DOI : 10.1109/ECCTD.2009.5274924.Analysis of a Novel BAW-based Power Amplifier
2009. p. 375 - 378. DOI : 10.1109/ECCTD.2009.5274992.RF Front-End for Autonomous Low Power Wireless Sensor Nodes
2009A Novel Complex Gm-C IF Sub-Sampling Mixer
2009. European Conference on Circuit Theory Design, Antalya, TURKEY, Aug 23-27, 2009. p. 29 - 32. DOI : 10.1109/ECCTD.2009.5275140.TD: Trends in Communication Circuits and Systems
2008. p. 520 - 521. DOI : 10.1109/ISSCC.2008.4523286.Impact of Lateral Asymmetry of MOSFETs on the Gate and Drain Noise Correlation
IEEE Transactions on Electron Devices. 2008. DOI : 10.1109/TED.2008.925935.A Low-Power Programmable Dynamic Frequency Divider
2008. p. 370 - 373.SE2: MEMS for Frequency Synthesis and Wireless RF Communications (or Life without Quartz Crystal)
2008. p. 14 - 15. DOI : 10.1109/ISSCC.2008.4523040.A Short Story of the EKV MOS Transistor Model
IEEE Solid-State Circuits Newsletter. 2008. DOI : 10.1109/N-SSC.2008.4785778.EKV3 MOSFET Compact Model Documentation, Model Version 301.02
2008A low-power 2.4 GHz CMOS receiver using BAW resonators
Lausanne, EPFL, 2008. DOI : 10.5075/epfl-thesis-4141.Ultra Low-Power MEMS-based Radio for Wireless Sensor Networks
FTFC. 2008.Compact Modeling of Noise in Nonuniform Channel MOSFET
2008.2024
Thermo-optic epsilon-near-zero effects
Nature Communications. 2024-01-26. DOI : 10.1038/s41467-024-45054-z.An Ultralow Power Short-Range 60-GHz FMCW Radar in 22-nm FDSOI CMOS
Ieee Transactions On Microwave Theory And Techniques. 2024-02-13. DOI : 10.1109/TMTT.2023.3348035.Analytical Modeling of Cryogenic Subthreshold Currents in 22-nm FDSOI Technology
Ieee Electron Device Letters. 2024-01-01. DOI : 10.1109/LED.2023.3331022.2023
Manufacturing-Enabled Tunability of Linear and Nonlinear Epsilon-Near-Zero Properties in Indium Tin Oxide Nanofilms
Acs Applied Materials & Interfaces. 2023-07-14. DOI : 10.1021/acsami.3c06270.Analytical Modeling of Source-to-Drain Tunneling Current Down to Cryogenic Temperatures
Ieee Electron Device Letters. 2023-05-01. DOI : 10.1109/LED.2023.3254592.An improved subthreshold swing expression accounting for back-gate bias in FDSOI FETs
Solid-State Electronics. 2023-02-06. DOI : 10.1016/j.sse.2023.108608.Modeling and analysis of miniaturized magnetorheological valve for fluidic actuation
Lausanne, EPFL, 2023. DOI : 10.5075/epfl-thesis-10341.Monitoring of Protein and pH Levels in Human Biofluids using FD-SOI Silicon Nanowire Arrays
Lausanne, EPFL, 2023. DOI : 10.5075/epfl-thesis-9998.Dual-Polarized SIW Slot Antenna Using ENZ Metamaterial for 5G and mmWave Applications
2023-01-01. 17th European Conference on Antennas and Propagation (EuCAP), Florence, ITALY, Mar 26-31, 2023. DOI : 10.23919/EuCAP57121.2023.10133482.Design of Cryo-CMOS Analog Circuits using the Gm/ID Approach
2023-01-01. 56th IEEE International Symposium on Circuits and Systems (ISCAS), Monterey, CA, May 21-25, 2023. DOI : 10.1109/ISCAS46773.2023.10181986.The Fano Noise Suppression Factor and the Gm/ID FoM
2023-01-01. 56th IEEE International Symposium on Circuits and Systems (ISCAS), Monterey, CA, May 21-25, 2023. DOI : 10.1109/ISCAS46773.2023.10182026.Design of Low-power Analog Circuits in Advanced Technology Nodes using the Gm/ID Approach
2023-01-01. 56th IEEE International Symposium on Circuits and Systems (ISCAS), Monterey, CA, May 21-25, 2023. DOI : 10.1109/ISCAS46773.2023.10181364.Ultra-Low Power Short-Range 60-GHz FMCW Radar Front-End
Lausanne, EPFL, 2023. DOI : 10.5075/epfl-thesis-9707.Optical Urea Sensing in Sweat for Kidney Healthcare by Sensitive and Selective Non-enhanced Raman Spectroscopy
2023-01-01. Conference on Optical Diagnostics and Sensing XXIII - Toward Point-of-Care Diagnostics, San Francisco, CA, Jan 30-31, 2023. p. 123870H. DOI : 10.1117/12.2653959.Third-harmonic generation monitoring of femtosecond-laser-induced in-volume functional modifications
Optica. 2023. DOI : 10.1364/OPTICA.486746.2022
All-optical switching in epsilon-near-zero asymmetric directional coupler
Scientific Reports. 2022-10-26. DOI : 10.1038/s41598-022-22573-7.Observation of SQUID-Like Behavior in Fiber Laser with Intra-Cavity Epsilon-Near-Zero Effect
Laser & Photonics Reviews. 2022-08-25. DOI : 10.1002/lpor.202200487.Back-gate effects on DC performance and carrier transport in 22 nm FDSOI technology down to cryogenic temperatures
Solid-State Electronics. 2022-07-01. DOI : 10.1016/j.sse.2022.108296.Ultrafast dynamic switching of optical response based on nonlinear hyperbolic metamaterial platform
Optics Express. 2022-06-06. DOI : 10.1364/OE.457875.Cryogenic InGaAs HEMT-Based Switches For Quantum Signal Routing
2022-01-01. International Electron Devices Meeting (IEDM), San Francisco, CA, Dec 03-07, 2022. DOI : 10.1109/IEDM45625.2022.10019536.Simple Expression of the Thermal Noise Excess Factor for LNA Design
2022-01-01. 29th IEEE International Conference on Electronics, Circuits and Systems (IEEE ICECS), Glasgow, SCOTLAND, Oct 24-26, 2022. DOI : 10.1109/ICECS202256217.2022.9970862.Cryogenic RF Characterization and Simple Modeling of a 22 nm FDSOI Technology
2022-01-01. 52nd IEEE European Solid-State Device Research Conference (ESSDERC), Milan, ITALY, Sep 19-22, 2022. p. 269-272. DOI : 10.1109/ESSDERC55479.2022.9947192.Rapid, Sensitive and Selective Optical Glucose Sensing with Stimulated Raman Scattering (SRS)
2022-01-01. 17th IEEE International Symposium on Medical Measurements and Applications (IEEE MeMeA), Messina, ITALY, Jun 22-24, 2022. DOI : 10.1109/MEMEA54994.2022.9856428.SEKV-E: Parameter Extractor of Simplified EKV I-V Model for Low-Power Analog Circuits
Ieee Open Journal Of Circuits And Systems. 2022-01-01. DOI : 10.1109/OJCAS.2022.3179046.Comprehensive Design-oriented FDSOI EKV Model
2022-01-01. 29th International Conference on Mixed Design of Integrated Circuits and System (MIXDES), Wroclaw, POLAND, Jun 23-24, 2022. p. 40-44. DOI : 10.23919/MIXDES55591.2022.9838014.Comparison of Two in Pixel Source Follower Schemes for Deep Subelectron Noise CMOS Image Sensors
Ieee Journal Of The Electron Devices Society. 2022-01-01. DOI : 10.1109/JEDS.2022.3200520.Increased Device Variability Induced by Total Ionizing Dose in 16-nm Bulk nFinFETs
Ieee Transactions On Nuclear Science. 2022-07-01. DOI : 10.1109/TNS.2022.3170937.Energy Efficient Sensing using Steep Slope Devices
Lausanne, EPFL, 2022. DOI : 10.5075/epfl-thesis-8122.SiGe Time Resolving Pixel Detectors for High Energy Physics and Medical Imaging
Lausanne, EPFL, 2022. DOI : 10.5075/epfl-thesis-9949.New Technologies to Enhance the Figures-of-Merit of GaN Power Devices
Lausanne, EPFL, 2022. DOI : 10.5075/epfl-thesis-9625.Influence of Fin and Finger Number on TID Degradation of 16-nm Bulk FinFETs Irradiated to Ultrahigh Doses
Ieee Transactions On Nuclear Science. 2022-03-01. DOI : 10.1109/TNS.2021.3125769.2021
Cryogenic Characterization of 16 nm FinFET Technology for Quantum Computing
2021-09-13. 47th European Solid State Circuits Conference (ESSCIRC 2021), Grenoble, France, Septembre 13-22, 2021. p. 71-74. DOI : 10.1109/ESSCIRC53450.2021.9567747.In-depth Cryogenic Characterization of 22 nm FDSOI Technology for Quantum Computation
2021-09-01. 7th Joint International EuroSOI Workshop and International Conference on Ultimate Integration on Silicon (EuroSOI-ULIS'2021), Caen, France, Septembre 1-3, 2021. p. 1-4. DOI : 10.1109/EuroSOI-ULIS53016.2021.9560181.Very Selective Detection of Low Physiopathological Glucose Levels by Spontaneous Raman Spectroscopy with Univariate Data Analysis
BioNanoScience. 2021-05-08. DOI : 10.1007/s12668-021-00867-w.Optimized Detection of Hypoglycemic Glucose Ranges in Human Serum by Raman Spectroscopy with 532 nm Laser Excitation
2021-01-01. 10th International Conference on Photonics, Optics and Laser Technology (PHOTOPTICS), ELECTR NETWORK, Feb 10-11, 2022. p. 158-165. DOI : 10.5220/0010981300003121.A 60 GHz QDCO with 11 GHz Seamless Tuning for Low-Power FMCW Radars in 22-nm FDSOI
2021-01-01. 47th IEEE European Solid State Circuits Conference (ESSCIRC), ELECTR NETWORK, Sep 06-09, 2021. p. 291-294. DOI : 10.1109/ESSCIRC53450.2021.9567787.An Optimized Low-Power Band-Tuning TX for Short-Range FMCW Radar in 22-nm FDSOI CMOS
2021-01-01. 47th IEEE European Solid State Circuits Conference (ESSCIRC), ELECTR NETWORK, Sep 06-09, 2021. p. 467-470. DOI : 10.1109/ESSCIRC53450.2021.9567815.Low-Power and Wide-Tuning Range Frequency Generation for FMCW Radars in Advanced CMOS Technologies
Lausanne, EPFL, 2021. DOI : 10.5075/epfl-thesis-7662.New Reliability Assessment of MEMS Components under Accumulative Testing for Space Applications
Lausanne, EPFL, 2021. DOI : 10.5075/epfl-thesis-8670.Nanowatt Acoustic Inference Sensing Exploiting Nonlinear Analog Feature Extraction
Ieee Journal Of Solid-State Circuits. 2021-10-01. DOI : 10.1109/JSSC.2021.3076344.TID Degradation Mechanisms in 16-nm Bulk FinFETs Irradiated to Ultrahigh Doses
Ieee Transactions On Nuclear Science. 2021-08-01. DOI : 10.1109/TNS.2021.3076977.Power-Optimized Digitally Controlled Oscillator in 28-nm CMOS for Low-Power FMCW Radars
Ieee Microwave And Wireless Components Letters. 2021-08-01. DOI : 10.1109/LMWC.2021.3092182.Generalized Boltzmann relations in semiconductors including band tails
Journal Of Applied Physics. 2021-01-28. DOI : 10.1063/5.0037432.Cryogenic MOSFET Modeling for Large-Scale Quantum Computing
Lausanne, EPFL, 2021. DOI : 10.5075/epfl-thesis-8365.Characterization and Modeling of Total Ionizing Dose Effects on Nanoscale MOSFETs for Particle Physics Experiments
Lausanne, EPFL, 2021. DOI : 10.5075/epfl-thesis-7549.Networks of Coupled VO2 Oscillators for Neuromorphic Computing
Lausanne, EPFL, 2021. DOI : 10.5075/epfl-thesis-9303.Cryogenic CMOS Integrated Circuits for Scalable Readout of Silicon Quantum Computers
Lausanne, EPFL, 2021. DOI : 10.5075/epfl-thesis-7984.Megapixel SPAD cameras for time-resolved applications
Lausanne, EPFL, 2021. DOI : 10.5075/epfl-thesis-8773.A Generalized EKV Charge-based MOSFET Model Including Oxide and Interface Traps
Solid-State Electronics. 2021-01-07. DOI : 10.1016/j.sse.2020.107951.A novel approach for SPICE modeling of light and radiation effects in ICs
Lausanne, EPFL, 2021. DOI : 10.5075/epfl-thesis-8422.Enseignement et PhD
A dirigé les thèses EPFL de
Mihaela Grigorie, Rafael Fried, Matthias Bucher, Manfred Punzenberger, Uroschanit Yodprasit, Nicola Scolari, Ananda Sankar Roy, Jérémie Chabloz, Matteo Contaldo, Aravind Prasad Heragu Singaiyengar, Viswanathan Balasubramanian, Anurag Mangla, Raghavasimhan Thirunarayanan, Maria-Anna Chalkiadaki, Assim Boukhayma, Vladimir Kopta, Huaiqi Huang, Jérémy Schlachter, Vincent Camus, Antonino Caizzone, Raffaele Capoccia, Chunmin Zhang, Francesco Chicco, Arnout Beckers, Sammy Cerida
A co-dirigé les thèses EPFL de
Thierry Bernard Melly, Alain-Serge Porret, Dominique Python, Frédéric Zanella, Hung-Chi Han
Cours
Fundamentals of analog VLSI design
EE-424
Ce cours présente la conception de circuits intégrés analogiques CMOS basse consommation en utilisant le concept de coefficient d'inversion basé sur le modèle EKV du transistor MOS. Il couvre la modélisation, les circuits élémentaires et plus complexes (amplificateurs, circuits à capacités commutées