Raphaël Butté
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EPFL SB IPHYS LASPE
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Identification and thermal healing of focused ion beam-induced defects in GaN using off-axis electron holography
Applied Physics Express. 2024-01-01. DOI : 10.35848/1882-0786/ad163d.Optical and thermal characterization of a group-III nitride semiconductor membrane by microphotoluminescence spectroscopy and Raman thermometry
Physical Review B. 2023-12-29. DOI : 10.1103/PhysRevB.108.235313.Investigation of the Impact of Point Defects in InGaN/GaN Quantum Wells with High Dislocation Densities
Nanomaterials. 2023-09-01. DOI : 10.3390/nano13182569.Polariton lasing in AlGaN microring with GaN/AlGaN quantum wells
Apl Photonics. 2023-02-01. DOI : 10.1063/5.0132170.Single photon emission and recombination dynamics in self-assembled GaN/AlN quantum dots
Light-Science & Applications. 2022-04-28. DOI : 10.1038/s41377-022-00799-4.Imaging Nonradiative Point Defects Buried in Quantum Wells Using Cathodoluminescence
Nano Letters. 2021-06-23. DOI : 10.1021/acs.nanolett.1c01295.Ultrafast-nonlinear ultraviolet pulse modulation in an AlInGaN polariton waveguide operating up to room temperature
Nature Communications. 2021-06-09. DOI : 10.1038/s41467-021-23635-6.Dark-level trapping, lateral confinement, and built-in electric field contributions to the carrier dynamics in c-plane GaN/AlN quantum dots emitting in the UV range
Journal Of Applied Physics. 2021-02-07. DOI : 10.1063/5.0038733.Interplay of anomalous strain relaxation and minimization of polarization changes at nitride semiconductor heterointerfaces
Physical Review B. 2020-12-21. DOI : 10.1103/PhysRevB.102.245304.Deep traps in InGaN/GaN single quantum well structures grown with and without InGaN underlayers
Journal Of Alloys And Compounds. 2020-12-10. DOI : 10.1016/j.jallcom.2020.156269.Interplay of intrinsic and extrinsic states in pinning and passivation of m-plane facets of GaN n-p-n junctions
Journal Of Applied Physics. 2020-11-14. DOI : 10.1063/5.0020652.Effects of 5 MeV electron irradiation on deep traps and electroluminescence from near-UV InGaN/GaN single quantum well light-emitting diodes with and without InAlN superlattice underlayer
Journal Of Physics D-Applied Physics. 2020-10-28. DOI : 10.1088/1361-6463/aba6b7.Polariton relaxation and polariton nonlinearities in nonresonantly cw-pumped III-nitride slab waveguides
Physical Review B. 2020-10-19. DOI : 10.1103/PhysRevB.102.155304.Toward Bright and Pure Single Photon Emitters at 300 K Based on GaN Quantum Dots on Silicon
Acs Photonics. 2020-06-17. DOI : 10.1021/acsphotonics.0c00310.Impact of defects on Auger recombination in c-plane InGaN/GaN single quantum well in the efficiency droop regime
Applied Physics Letters. 2020-06-01. DOI : 10.1063/5.0004321.III-nitride photonic cavities
Nanophotonics. 2020-03-01. DOI : 10.1515/nanoph-2019-0442.Broadened Bandwidth Amplified Spontaneous Emission from Blue GaN-Based Short-Cavity Superluminescent Light-Emitting Diodes
Ecs Journal Of Solid State Science And Technology. 2019-12-16. DOI : 10.1149/2.0432001JSS.Effects of InAlN underlayer on deep traps detected in near-UV InGaN/GaN single quantum well light-emitting diodes
Journal Of Applied Physics. 2019-09-28. DOI : 10.1063/1.5122314.Probing Alloy Formation Using Different Excitonic Species: The Particular Case of InGaN
Physical Review X. 2019-08-21. DOI : 10.1103/PhysRevX.9.031030.Short cavity InGaN-based laser diodes with cavity length below 300 mu m
Semiconductor Science And Technology. 2019-08-01. DOI : 10.1088/1361-6641/ab2c2f.Probing alloy formation using different excitonic species: The particular case of InGaN
2019-01-01. Compound Semiconductor Week (CSW) Conference, Nara, JAPAN, May 19-23, 2019. DOI : 10.1109/ICIPRM.2019.8819178.GaN surface as the source of non-radiative defects in InGaN/GaN quantum wells
Applied Physics Letters. 2018-09-10. DOI : 10.1063/1.5048010.Optical absorption edge broadening in thick InGaN layers: Random alloy atomic disorder and growth mode induced fluctuations
Applied Physics Letters. 2018. DOI : 10.1063/1.5010879.Optical absorption and oxygen passivation of surface states in III-nitride photonic devices
Journal of Applied Physics. 2018. DOI : 10.1063/1.5022150.Impact of surface morphology on the properties of light emission in InGaN epilayers
APPLIED PHYSICS EXPRESS. 2018. DOI : 10.7567/APEX.11.051004.Excited states of neutral donor bound excitons in GaN
Journal of Applied Physics. 2018. DOI : 10.1063/1.5028370.A quantum optical study of thresholdless lasing features in high-beta nitride nanobeam cavities
Nature Communications. 2018. DOI : 10.1038/s41467-018-02999-2.Impact of Mode-Hopping Noise on InGaN Edge Emitting Laser Relative Intensity Noise Properties
IEEE Journal of Quantum Electronics. 2018. DOI : 10.1109/Jqe.2017.2774358.Burying non-radiative defects in InGaN underlayer to increase InGaN/GaN quantum well efficiency
Applied Physics Letters. 2017. DOI : 10.1063/1.5007616.Determining the nature of excitonic dephasing in high-quality GaN/AlGaN quantum wells through time-resolved and spectrally resolved four-wave mixing spectroscopy
Physical Review B. 2017. DOI : 10.1103/PhysRevB.96.041303.Thin-Wall GaN/InAlN Multiple Quantum Well Tubes
Nano Letters. 2017. DOI : 10.1021/acs.nanolett.6b04852.Enhancement of Auger recombination induced by carrier localization in InGaN/GaN quantum wells
Physical Review B. 2017. DOI : 10.1103/PhysRevB.95.125314.Quantification of scattering loss of III-nitride photonic crystal cavities in the blue spectral range
Physical Review B. 2017. DOI : 10.1103/PhysRevB.95.125313.Propagating Polaritons in III-Nitride Slab Waveguides
Physical Review Applied. 2017. DOI : 10.1103/PhysRevApplied.7.034019.Fermi-level pinning and intrinsic surface states of Al1-xInxNd(10(1)over-bar0) surfaces
Applied Physics Letters. 2017. DOI : 10.1063/1.4973765.Thresholdless Lasing of Nitride Nanobeam Cavities on Silicon
2016. 25th International Semiconductor Laser Conference (ISLC), Kobe, JAPAN, SEP 12-15, 2016.Carrier-density-dependent recombination dynamics of excitons and electron-hole plasma in m-plane InGaN/GaN quantum wells
Physical Review B. 2016. DOI : 10.1103/PhysRevB.94.195411.Strain and compositional fluctuations in Al0.81In0.19N/GaN heterostructures
Applied Physics Letters. 2016. DOI : 10.1063/1.4963184.Statistical nanoscale study of localised radiative transitions in GaN/AlGaN quantum wells and AlGaN epitaxial layers
Semiconductor Science And Technology. 2016. DOI : 10.1088/0268-1242/31/9/095009.Fabrication defects and grating couplers in III-nitride photonic crystal nanobeam lasers (Conference Presentation)
2016. Conference on Photonic Crystal Materials and Devices XII, Brussels, BELGIUM, APR 05-07, 2016. p. 98850K. DOI : 10.1117/12.2230669.Far-field coupling in nanobeam photonic crystal cavities
Applied Physics Letters. 2016. DOI : 10.1063/1.4949359.Optical properties of nearly lattice-matched GaN/(Al,In)N quantum wells
Journal Of Applied Physics. 2016. DOI : 10.1063/1.4951711.Small-signal transient response and turn-on delay of polariton laser diodes
Semiconductor Science And Technology. 2016. DOI : 10.1088/0268-1242/31/3/035013.Statistical correction of atom probe tomography data of semiconductor alloys combined with optical spectroscopy: The case of Al0.25Ga0.75N
Journal Of Applied Physics. 2016. DOI : 10.1063/1.4943612.Vectorial near-field imaging of a GaN based photonic crystal cavity
Applied Physics Letters. 2015. DOI : 10.1063/1.4930892.Continuous Wave Blue Lasing in III-Nitride Nanobeam Cavity on Silicon
Nano Letters. 2015. DOI : 10.1021/nl504432d.Biexcitonic molecules survive excitons at the Mott transition
Nature Communications. 2014. DOI : 10.1038/ncomms6251.Gallium nitride L3 photonic crystal cavities with an average quality factor of 16 900 in the near infrared
Applied Physics Letters. 2014. DOI : 10.1063/1.4903861.Composition of Wide Bandgap Semiconductor Materials and Nanostructures Measured by Atom Probe Tomography and Its Dependence on the Surface Electric Field
Journal Of Physical Chemistry C. 2014. DOI : 10.1021/jp5071264.Nano-scale luminescence characterization of individual InGaN/GaN quantum wells stacked in a microcavity using scanning transmission electron microscope cathodoluminescence
Applied Physics Letters. 2014. DOI : 10.1063/1.4890670.InGaN/GaN quantum wells for polariton laser diodes: Role of inhomogeneous broadening
Journal Of Applied Physics. 2014. DOI : 10.1063/1.4883958.M-Plane GaN/InAlN Multiple Quantum Wells in Core-Shell Wire Structure for UV Emission
Acs Photonics. 2014. DOI : 10.1021/ph400031x.Q-factor of (In,Ga)N containing III-nitride microcavity grown by multiple deposition techniques
Journal Of Applied Physics. 2013. DOI : 10.1063/1.4846218.Impact of saturation on the polariton renormalization in III-nitride based planar microcavities
Physical Review B. 2013. DOI : 10.1103/PhysRevB.88.165312.Relative intensity noise and emission linewidth of polariton laser diodes
Physical Review B. 2013. DOI : 10.1103/PhysRevB.88.115305.Optical, structural, and morphological characterisation of epitaxial ZnO films grown by pulsed-laser deposition
Thin Solid Films. 2013. DOI : 10.1016/j.tsf.2013.04.146.Large-k exciton dynamics in GaN epilayers: Nonthermal and thermal regimes
Physical Review B. 2013. DOI : 10.1103/PhysRevB.87.075202.Intrinsic degradation mechanism of nearly lattice-matched InAlN layers grown on GaN substrates
Journal Of Applied Physics. 2013. DOI : 10.1063/1.4790424.Investigation of InGaN/GaN quantum wells for polariton laser diodes
2012. 11th International Conference on Physics of Light-Matter Coupling in Nanostructures (PLMCN), Berlin, GERMANY, Apr 04-08, 2011. p. 1325-1329. DOI : 10.1002/pssc.20100180.Impact of biexcitons on the relaxation mechanisms of polaritons in III-nitride based multiple quantum well microcavities
Physical Review B. 2012. DOI : 10.1103/PhysRevB.85.245308.High quality factor two dimensional GaN photonic crystal cavity membranes grown on silicon substrate
Applied Physics Letters. 2012. DOI : 10.1063/1.3684630.LIGHT-EMITTING DIODES Solid-state lighting on glass
Nature Photonics. 2011. DOI : 10.1038/nphoton.2011.298.A novel class of coherent light emitters: polariton lasers
Semiconductor Science And Technology. 2011. DOI : 10.1088/0268-1242/26/1/014030.Strain compensation in AlInN/GaN multilayers on GaN substrates: Application to the realization of defect-free Bragg reflectors
Applied Physics Letters. 2011. DOI : 10.1063/1.3586767.Tailoring the light-matter coupling in anisotropic microcavities: Redistribution of oscillator strength in strained m-plane GaN/AlGaN quantum wells
Physical Review B. 2011. DOI : 10.1103/PhysRevB.84.115315.Polariton lasing in a hybrid bulk ZnO microcavity
Applied Physics Letters. 2011. DOI : 10.1063/1.3650268.Probing exciton density of states through phonon-assisted emission in GaN epilayers: A and B exciton contributions
Physical Review B. 2010. DOI : 10.1103/PhysRevB.82.115208.Spin relaxation of free excitons in narrow GaN/AlxGa1-xN quantum wells
Physical Review B. 2010. DOI : 10.1103/PhysRevB.82.195302.POLARIZATION BEHAVIOR ABOVE THE POLARITON CONDENSATION THRESHOLD IN A GaN-BASED MULTIPLE QUANTUM WELL MICROCAVITY
2010. 11th International Conference on Optics of Excitons in Confined Systems, Cantoblanco, SPAIN, Sep 07-11, 2009.PHASE DIAGRAM OF EXCITON-POLARITONS IN MULTIPLE QUANTUM WELL GaN-BASED MICROCAVITIES
2010. 11th International Conference on Optics of Excitons in Confined Systems, Sep 07-11, 2009.Condensation phase diagram of cavity polaritons in GaN-based microcavities: Experiment and theory
Physical Review B. 2010. DOI : 10.1103/PhysRevB.81.125305.Pinning and Depinning of the Polarization of Exciton-Polariton Condensates at Room Temperature
Physical Review Letters. 2010. DOI : 10.1103/PhysRevLett.104.166402.Anomalous composition dependence of the band gap pressure coefficients in In-containing nitride semiconductors
Physical Review B. 2010. DOI : 10.1103/PhysRevB.81.235206.GaN-based embedded 2D photonic crystal LEDs: Numerical optimization and device characterization
2009. International Workshop on Nitride Semiconductors (IWN). p. S675-S679. DOI : 10.1002/pssc.200880987.Room temperature polariton lasing in III-nitride microcavities, a comparison with blue GaN-based vertical cavity surface emitting lasers
2009. Conference on Gallium Nitride Materials and Devices IV, San Jose, CA, Jan 26-29, 2009. p. 721619. DOI : 10.1117/12.803718.Homogeneous and inhomogeneous linewidth broadening of single polar GaN/AlN quantum dots
2009. International Workshop on Nitride Semiconductors, Montreux, SWITZERLAND, Oct 06-10, 2008. p. S598-S601. DOI : 10.1002/pssc.200880971.Towards room temperature electrically pumped blue vertical cavity surface emitting lasers
2009. Conference on Lasers and Electro-Optics/Quantum Electronics and Laser Science Conference (CLEO/QELS 2009), Baltimore, MD, Jun 02-04, 2009. p. 391-392. DOI : 10.1364/CLEO.2009.CMEE6.GaN-based laser diodes including a lattice-matched Al0.83In0.17N cladding layer
2009. Conference on Lasers and Electro-Optics/Quantum Electronics and Laser Science Conference (CLEO/QELS 2009), Baltimore, MD, Jun 02-04, 2009. p. 1631-1632. DOI : 10.1364/CLEO.2009.CTuY5.Tailoring the strong coupling regime in III-nitride based microcavities for room temperature polariton laser applications
Physica Status Solidi C. 2009. DOI : 10.1002/pssc.200982563.Quantum confinement dependence of the energy splitting and recombination dynamics of A and B excitons in a GaN/AlGaN quantum well
Physical Review B. 2009. DOI : 10.1103/PhysRevB.79.245316.Al0.83In0.17N lattice-matched to GaN used as an optical blocking layer in GaN-based edge emitting lasers
Applied Physics Letters. 2009. DOI : 10.1063/1.3138136.Phase diagram of a polariton laser from cryogenic to room temperature
Physical Review B. 2009. DOI : 10.1103/PhysRevB.80.233301.High reflectivity airgap distributed Bragg reflectors realized by wet etching of AlInN sacrificial layers
Applied Physics Letters. 2009. DOI : 10.1063/1.3259720.Nonpolar GaN-based microcavity using AlN/GaN distributed bragg reflector
Applied Physics Letters. 2008. DOI : 10.1063/1.2857500.Impact of quantum confinement and quantum confined Stark effect on biexciton binding energy in GaN/AlGaN quantum wells
Applied Physics Letters. 2008. DOI : 10.1063/1.2973897.Biexciton kinetics in GaN quantum wells: Time-resolved and time-integrated photoluminescence measurements
Physical Review B. 2008. DOI : 10.1103/PhysRevB.77.125342.High quality nitride based microdisks obtained via selective wet etching of AlInN sacrificial layers
Applied Physics Letters. 2008. DOI : 10.1063/1.2917452.Complex behavior of biexcitons in GaN quantum dots due to a giant built-in polarization field
Physical Review B. 2008. DOI : 10.1103/PhysRevB.77.075306.Room temperature polariton lasing in a GaN/AlGaN multiple quantum well microcavity
Applied Physics Letters. 2008. DOI : 10.1063/1.2966369.Blue laser diodes including lattice-matched Al0.83In0.17N bottom cladding layer
Electronics Letters. 2008. DOI : 10.1049/el:20080495.Spontaneous polarization buildup in a room-temperature polariton laser
Physical Review Letters. 2008. DOI : 10.1103/PhysRevLett.101.136409.a-plane GaN grown on r-plane sapphire substrates by hydride vapor phase epitaxy
Journal of Crystal Growth. 2007. DOI : 10.1016/j.jcrysgro.2006.11.010.Strain relaxation of AlN epilayers Stranski-Krastanov GaN/AlN quantum dots grown by organic vapor phase epitaxy
Journal of Crystal Growth. 2007. DOI : 10.1016/j.jcrysgro.2006.12.005.Blue lasing at room temperature in high quality factor GaN/AlInN microdisks with InGaN quantum wells
Applied Physics Letters. 2007. DOI : 10.1063/1.2460234.Nitride-based heterostructures grown by MOCVD for near- and mid-infrared intersubband transitions
Physica Status Solidi a-Applications and Materials Science. 2007. DOI : 10.1002/pssa.200622483.Growth mode induced carrier localization in InGaN/GaN quantum wells
Philosophical Magazine. 2007. DOI : 10.1080/14786430701271942.Narrow UV emission from homogeneous GaN/AlGaN quantum wells
Applied Physics Letters. 2007. DOI : 10.1063/1.2429027.Blue lasing at room temperature in an optically pumped lattice-matched AlInN/GaN VCSEL structure
Electronics Letters. 2007. DOI : 10.1049/el:20071226.Room-temperature polariton lasing in semiconductor microcavities
Physical Review Letters. 2007. DOI : 10.1103/PhysRevLett.98.126405.Efficient current injection scheme for nitride vertical cavity surface emitting lasers
Applied Physics Letters. 2007. DOI : 10.1063/1.2431484.Current status of AlInN layers lattice-matched to GaN for photonics and electronics
Journal of Physics D-Applied Physics. 2007. DOI : 10.1088/0022-3727/40/20/s16.Stranski-Krastanov GaN/AlN quantum dots grown by metal organic vapor phase epitaxy
Journal of Applied Physics. 2006. DOI : 10.1063/1.2189975.High quality thin GaN templates grown by hydride vapor phase epitaxy on sapphire substrates
Applied Physics Letters. 2006. DOI : 10.1063/1.2213175.Room temperature polariton luminescence from a GaN/AlGaN quantum well microcavity
Applied Physics Letters. 2006. DOI : 10.1063/1.2335404.Crack-free highly reflective AlInN/AlGaN bragg mirrors for UV applications
Applied Physics Letters. 2006. DOI : 10.1063/1.2167399.Impact of disorder on high quality factor III-V nitride microcavities
Applied Physics Letters. 2006. DOI : 10.1063/1.2420788.Impact of inhomogeneous excitonic broadening on the strong exciton-photon coupling in quantum well nitride microcavities
Physical Review B. 2006. DOI : 10.1103/PhysRevB.73.153305.Room-temperature polariton luminescence from a bulk GaN microcavity
Physical Review B. 2006. DOI : 10.1103/PhysRevB.73.033315.Midinfrared intersubband absorption in lattice-matched AlInN/GaN multiple quantum wells
Applied Physics Letters. 2005. DOI : 10.1063/1.204559.Lattice-matched distributed Bragg reflectors for nitride-based vertical cavity surface emitting lasers
Electronics Letters. 2005. DOI : 10.1049/el:20057334.Progresses in III-nitride distributed Bragg reflectors and microcavities using AlInN/GaN materials
Physica Status Solidi B-Basic Solid State Physics. 2005. DOI : 10.1002/pssb.200560968.Crack-free fully epitaxial nitride microcavity using highly reflective AllnN/GaN Bragg mirrors
Applied Physics Letters. 2005. DOI : 10.1063/1.1849851.Recent progress in the growth of highly reflective nitride-based distributed Bragg reflectors and their use in microcavities
Japanese Journal of Applied Physics Part 1-Regular Papers Brief Communications & Review Papers. 2005. DOI : 10.1143/jjap.44.7207.Links between hydrogen bonding, residual stress, structural properties and metastability in hydrogenated nanostructured silicon thin films
Journal of Physics-Condensed Matter. 2003. DOI : 10.1088/0953-8984/15/43/004.Structural properties and recombination processes in hydrogenated polymorphous silicon
European Physical Journal-Applied Physics. 2003. DOI : 10.1051/epjap:2003030.Hydrogen related bonding structure in hydrogenated polymorphous and microcrystalline silicon
Journal of Non-Crystalline Solids. 2002. DOI : 10.1016/S0022-3093(01)00951-6.Evolution with light-soaking of polymorphous material prepared at 423 K
Journal of Non-Crystalline Solids. 2002. DOI : 10.1016/S0022-3093(01)01020-1.Transition from strong to weak coupling and the onset of lasing in semiconductor microcavities
Physical Review B. 2002. DOI : 10.1103/PhysRevB.65.205310.Stimulated polariton scattering in semiconductor microcavities: New physics and potential applications
Advanced Materials. 2001. DOI : 10.1002/1521-4095(200111)13:22<1725::AID-ADMA1725>3.0.CO;2-Z.Thermoelectric power in undoped hydrogenated polymorphous silicon
Thin Solid Films. 2000. DOI : 10.1016/S0040-6090(00)00742-2.Structural, optical and electronic properties of hydrogenated polymorphous silicon films deposited at 150 degrees C
Journal of Non-Crystalline Solids. 2000. DOI : 10.1016/S0022-3093(99)00833-9.Structural properties depicted by optical measurements in hydrogenated polymorphous silicon
Journal of Physics-Condensed Matter. 1999. DOI : 10.1088/0953-8984/11/44/313.Determination of the midgap density of states and capture cross-sections in polymorphous silicon by space-charge-limited conductivity and relaxation
Philosophical Magazine Letters. 1999. DOI : 10.1080/095008399176832.Midgap density of states in hydrogenated polymorphous silicon
Journal of Applied Physics. 1999. DOI : 10.1063/1.370829.Very low densities of localized states at the Fermi level in hydrogenated polymorphous silicon from capacitance and space-charge-limited current measurements
Applied Physics Letters. 1999. DOI : 10.1063/1.125348.Some electronic and metastability properties of a new nanostructured material: hydrogenated polymorphous silicon
Philosophical Magazine B-Physics of Condensed Matter Statistical Mechanics Electronic Optical and Magnetic Properties. 1999. DOI : 10.1080/13642819908214860.Infoscience
V<sub>N</sub>-V<sub>In</sub> divacancies as the origin of non-radiative recombination centers in InGaN quantum wells
APL MATERIALS. 2025. DOI : 10.1063/5.0256650.Quantifying carbon site switching dynamics in GaN by electron holography
Physical Review Research. 2025. DOI : 10.1103/PhysRevResearch.7.013200.Extending the Supercontinuum Spectrum in Fully Etched Thick Aluminum Nitride Waveguides
2025. 2025 Conference on Lasers and Electro-Optics Europe & European Quantum Electronics Conference, Munich, Germany, 2025-06-23 - 2025-06-27. DOI : 10.1109/CLEO/EUROPE-EQEC65582.2025.11110287.Multi-octave bandwidth supercontinuum generation in crystalline Aluminum Nitride-on-sapphire waveguides
2025. 24th Nonlinear Frequency Generation and Conversion (2025), San Francisco, United States, 2025-01-28 - 2025-01-31. DOI : 10.1117/12.3043189.On the influence of the buffer layer on the optical quality of AlN-on-sapphire epilayers for photonic integrated devices
2025. 29 Integrated Optics: Devices, Materials, and Technologies, San Francisco, California, United States, 2025-01-27 - 2025-01-30. DOI : 10.1117/12.3041202.Sub-20 kHz low-frequency noise near ultraviolet butt-coupled fiber Bragg grating external cavity laser diode
Applied Physics Letters. 2024. DOI : 10.1063/5.0235240.Origin of giant enhancement of phase contrast in electron holography of modulation-doped n-type GaN
Ultramicroscopy. 2024. DOI : 10.1016/j.ultramic.2024.114006.Identification and thermal healing of focused ion beam-induced defects in GaN using off-axis electron holography
Applied Physics Express. 2024. DOI : 10.35848/1882-0786/ad163d.Optical and thermal characterization of a group-III nitride semiconductor membrane by microphotoluminescence spectroscopy and Raman thermometry
Physical Review B. 2023. DOI : 10.1103/PhysRevB.108.235313.Investigation of the Impact of Point Defects in InGaN/GaN Quantum Wells with High Dislocation Densities
Nanomaterials. 2023. DOI : 10.3390/nano13182569.Polariton lasing in AlGaN microring with GaN/AlGaN quantum wells
Apl Photonics. 2023. DOI : 10.1063/5.0132170.Single photon emission and recombination dynamics in self-assembled GaN/AlN quantum dots
Light-Science & Applications. 2022. DOI : 10.1038/s41377-022-00799-4.Imaging Nonradiative Point Defects Buried in Quantum Wells Using Cathodoluminescence
Nano Letters. 2021. DOI : 10.1021/acs.nanolett.1c01295.Ultrafast-nonlinear ultraviolet pulse modulation in an AlInGaN polariton waveguide operating up to room temperature
Nature Communications. 2021. DOI : 10.1038/s41467-021-23635-6.Dark-level trapping, lateral confinement, and built-in electric field contributions to the carrier dynamics in c-plane GaN/AlN quantum dots emitting in the UV range
Journal Of Applied Physics. 2021. DOI : 10.1063/5.0038733.Interplay of anomalous strain relaxation and minimization of polarization changes at nitride semiconductor heterointerfaces
Physical Review B. 2020. DOI : 10.1103/PhysRevB.102.245304.Deep traps in InGaN/GaN single quantum well structures grown with and without InGaN underlayers
Journal Of Alloys And Compounds. 2020. DOI : 10.1016/j.jallcom.2020.156269.Interplay of intrinsic and extrinsic states in pinning and passivation of m-plane facets of GaN n-p-n junctions
Journal Of Applied Physics. 2020. DOI : 10.1063/5.0020652.Effects of 5 MeV electron irradiation on deep traps and electroluminescence from near-UV InGaN/GaN single quantum well light-emitting diodes with and without InAlN superlattice underlayer
Journal Of Physics D-Applied Physics. 2020. DOI : 10.1088/1361-6463/aba6b7.Polariton relaxation and polariton nonlinearities in nonresonantly cw-pumped III-nitride slab waveguides
Physical Review B. 2020. DOI : 10.1103/PhysRevB.102.155304.Toward Bright and Pure Single Photon Emitters at 300 K Based on GaN Quantum Dots on Silicon
Acs Photonics. 2020. DOI : 10.1021/acsphotonics.0c00310.Impact of defects on Auger recombination in c-plane InGaN/GaN single quantum well in the efficiency droop regime
Applied Physics Letters. 2020. DOI : 10.1063/5.0004321.III-nitride photonic cavities
Nanophotonics. 2020. DOI : 10.1515/nanoph-2019-0442.Broadened Bandwidth Amplified Spontaneous Emission from Blue GaN-Based Short-Cavity Superluminescent Light-Emitting Diodes
Ecs Journal Of Solid State Science And Technology. 2019. DOI : 10.1149/2.0432001JSS.Effects of InAlN underlayer on deep traps detected in near-UV InGaN/GaN single quantum well light-emitting diodes
Journal Of Applied Physics. 2019. DOI : 10.1063/1.5122314.Probing Alloy Formation Using Different Excitonic Species: The Particular Case of InGaN
Physical Review X (PRX). 2019. DOI : 10.1103/PhysRevX.9.031030.Short cavity InGaN-based laser diodes with cavity length below 300 mu m
Semiconductor Science And Technology. 2019. DOI : 10.1088/1361-6641/ab2c2f.Probing alloy formation using different excitonic species: The particular case of InGaN
2019. Compound Semiconductor Week (CSW) Conference, Nara, JAPAN, May 19-23, 2019. DOI : 10.1109/ICIPRM.2019.8819178.GaN surface as the source of non-radiative defects in InGaN/GaN quantum wells
Applied Physics Letters. 2018. DOI : 10.1063/1.5048010.III-Nitride Semiconductor Photonic Nanocavities on Silicon
Lausanne, EPFL, 2018. DOI : 10.5075/epfl-thesis-8823.Light-Matter Interaction in III-Nitride Waveguides: Propagating Polaritons and Optical Gain
Lausanne, EPFL, 2018. DOI : 10.5075/epfl-thesis-8946.Impact of Mode-Hopping Noise on InGaN Edge Emitting Laser Relative Intensity Noise Properties
IEEE Journal of Quantum Electronics. 2018. DOI : 10.1109/Jqe.2017.2774358.Propagating Polaritons in III-Nitride Slab Waveguides
Physical Review Applied. 2017. DOI : 10.1103/PhysRevApplied.7.034019.Fermi-level pinning and intrinsic surface states of Al1-xInxNd(10(1)over-bar0) surfaces
Applied Physics Letters. 2017. DOI : 10.1063/1.4973765.Enhancement of Auger recombination induced by carrier localization in InGaN/GaN quantum wells
Physical Review B. 2017. DOI : 10.1103/PhysRevB.95.125314.Burying non-radiative defects in InGaN underlayer to increase InGaN/GaN quantum well efficiency
Applied Physics Letters. 2017. DOI : 10.1063/1.5007616.Thin-Wall GaN/InAlN Multiple Quantum Well Tubes
Nano Letters. 2017. DOI : 10.1021/acs.nanolett.6b04852.Quantification of scattering loss of III-nitride photonic crystal cavities in the blue spectral range
Physical Review B. 2017. DOI : 10.1103/PhysRevB.95.125313.Determining the nature of excitonic dephasing in high-quality GaN/AlGaN quantum wells through time-resolved and spectrally resolved four-wave mixing spectroscopy
Physical Review B. 2017. DOI : 10.1103/PhysRevB.96.041303.Fabrication defects and grating couplers in III-nitride photonic crystal nanobeam lasers (Conference Presentation)
2016. Conference on Photonic Crystal Materials and Devices XII, Brussels, BELGIUM, APR 05-07, 2016. DOI : 10.1117/12.2230669.Optical properties of nearly lattice-matched GaN/(Al,In)N quantum wells
Journal Of Applied Physics. 2016. DOI : 10.1063/1.4951711.Thresholdless Lasing of Nitride Nanobeam Cavities on Silicon
2016. 25th International Semiconductor Laser Conference (ISLC), Kobe, JAPAN, SEP 12-15, 2016.Statistical correction of atom probe tomography data of semiconductor alloys combined with optical spectroscopy: The case of Al0.25Ga0.75N
Journal Of Applied Physics. 2016. DOI : 10.1063/1.4943612.Statistical nanoscale study of localised radiative transitions in GaN/AlGaN quantum wells and AlGaN epitaxial layers
Semiconductor Science And Technology. 2016. DOI : 10.1088/0268-1242/31/9/095009.Strain and compositional fluctuations in Al0.81In0.19N/GaN heterostructures
Applied Physics Letters. 2016. DOI : 10.1063/1.4963184.Carrier-density-dependent recombination dynamics of excitons and electron-hole plasma in m-plane InGaN/GaN quantum wells
Physical Review B. 2016. DOI : 10.1103/PhysRevB.94.195411.Far-field coupling in nanobeam photonic crystal cavities
Applied Physics Letters. 2016. DOI : 10.1063/1.4949359.Small-signal transient response and turn-on delay of polariton laser diodes
Semiconductor Science And Technology. 2016. DOI : 10.1088/0268-1242/31/3/035013.Continuous Wave Blue Lasing in III-Nitride Nanobeam Cavity on Silicon
Nano Letters. 2015. DOI : 10.1021/nl504432d.Vectorial near-field imaging of a GaN based photonic crystal cavity
Applied Physics Letters. 2015. DOI : 10.1063/1.4930892.Composition of Wide Bandgap Semiconductor Materials and Nanostructures Measured by Atom Probe Tomography and Its Dependence on the Surface Electric Field
Journal Of Physical Chemistry C. 2014. DOI : 10.1021/jp5071264.Gallium nitride L3 photonic crystal cavities with an average quality factor of 16 900 in the near infrared
Applied Physics Letters. 2014. DOI : 10.1063/1.4903861.High-Density Excitonic Effects in GaN : Mott-Transition and Polariton Lasing
Lausanne, EPFL, 2014. DOI : 10.5075/epfl-thesis-6245.Biexcitonic molecules survive excitons at the Mott transition
Nature Communications. 2014. DOI : 10.1038/ncomms6251.M-Plane GaN/InAlN Multiple Quantum Wells in Core-Shell Wire Structure for UV Emission
Acs Photonics. 2014. DOI : 10.1021/ph400031x.Nano-scale luminescence characterization of individual InGaN/GaN quantum wells stacked in a microcavity using scanning transmission electron microscope cathodoluminescence
Applied Physics Letters. 2014. DOI : 10.1063/1.4890670.InGaN alloys and heterostructures : impact of localization effects on light-matter interaction in planar microcavities
Lausanne, EPFL, 2014. DOI : 10.5075/epfl-thesis-6415.InGaN/GaN quantum wells for polariton laser diodes: Role of inhomogeneous broadening
Journal Of Applied Physics. 2014. DOI : 10.1063/1.4883958.Relative intensity noise and emission linewidth of polariton laser diodes
Physical Review B. 2013. DOI : 10.1103/PhysRevB.88.115305.Large-k exciton dynamics in GaN epilayers: Nonthermal and thermal regimes
Physical Review B. 2013. DOI : 10.1103/PhysRevB.87.075202.Optical, structural, and morphological characterisation of epitaxial ZnO films grown by pulsed-laser deposition
Thin Solid Films. 2013. DOI : 10.1016/j.tsf.2013.04.146.Q-factor of (In,Ga)N containing III-nitride microcavity grown by multiple deposition techniques
Journal Of Applied Physics. 2013. DOI : 10.1063/1.4846218.Intrinsic degradation mechanism of nearly lattice-matched InAlN layers grown on GaN substrates
Journal Of Applied Physics. 2013. DOI : 10.1063/1.4790424.Impact of saturation on the polariton renormalization in III-nitride based planar microcavities
Physical Review B. 2013. DOI : 10.1103/PhysRevB.88.165312.Mg doping for p-type AlInN lattice-matched to GaN
Applied Physics Letters. 2012. DOI : 10.1063/1.4747524.Nonlinear emission properties of an optically anisotropic GaN-based microcavity
Physical Review B. 2012. DOI : 10.1103/PhysRevB.86.165321.High quality factor two dimensional GaN photonic crystal cavity membranes grown on silicon substrate
Applied Physics Letters. 2012. DOI : 10.1063/1.3684630.Impact of biexcitons on the relaxation mechanisms of polaritons in III-nitride based multiple quantum well microcavities
Physical Review B. 2012. DOI : 10.1103/PhysRevB.85.245308.Generic picture of the emission properties of III-nitride polariton laser diodes: Steady state and current modulation response
Physical Review B. 2012. DOI : 10.1103/PhysRevB.86.125308.Investigation of InGaN/GaN quantum wells for polariton laser diodes
2012. 11th International Conference on Physics of Light-Matter Coupling in Nanostructures (PLMCN), Berlin, GERMANY, Apr 04-08, 2011. p. 1325 - 1329. DOI : 10.1002/pssc.20100180.Polariton lasing in a hybrid bulk ZnO microcavity
Applied Physics Letters. 2011. DOI : 10.1063/1.3650268.Tailoring the light-matter coupling in anisotropic microcavities: Redistribution of oscillator strength in strained m-plane GaN/AlGaN quantum wells
Physical Review B. 2011. DOI : 10.1103/PhysRevB.84.115315.LIGHT-EMITTING DIODES Solid-state lighting on glass
Nature Photonics. 2011. DOI : 10.1038/nphoton.2011.298.POLARIZATION BEHAVIOR ABOVE THE POLARITON CONDENSATION THRESHOLD IN A GaN-BASED MULTIPLE QUANTUM WELL MICROCAVITY
2010. 11th International Conference on Optics of Excitons in Confined Systems, Cantoblanco, SPAIN, Sep 07-11, 2009.Probing exciton density of states through phonon-assisted emission in GaN epilayers: A and B exciton contributions
Physical Review B. 2010. DOI : 10.1103/PhysRevB.82.115208.Spin relaxation of free excitons in narrow GaN/AlxGa1-xN quantum wells
Physical Review B. 2010. DOI : 10.1103/PhysRevB.82.195302.Anomalous composition dependence of the band gap pressure coefficients in In-containing nitride semiconductors
Physical Review B. 2010. DOI : 10.1103/PhysRevB.81.235206.Pinning and Depinning of the Polarization of Exciton-Polariton Condensates at Room Temperature
Physical Review Letters. 2010. DOI : 10.1103/PhysRevLett.104.166402.Condensation phase diagram of cavity polaritons in GaN-based microcavities: Experiment and theory
Physical Review B. 2010. DOI : 10.1103/PhysRevB.81.125305.GaN-based laser diodes including a lattice-matched Al0.83In0.17N cladding layer
2009. Conference on Lasers and Electro-Optics/Quantum Electronics and Laser Science Conference (CLEO/QELS 2009), Baltimore, MD, Jun 02-04, 2009. p. 1631 - 1632. DOI : 10.1364/CLEO.2009.CTuY5.Phase diagram of a polariton laser from cryogenic to room temperature
Physical Review B. 2009. DOI : 10.1103/PhysRevB.80.233301.Towards room temperature electrically pumped blue vertical cavity surface emitting lasers
2009. Conference on Lasers and Electro-Optics/Quantum Electronics and Laser Science Conference (CLEO/QELS 2009), Baltimore, MD, Jun 02-04, 2009. p. 391 - 392. DOI : 10.1364/CLEO.2009.CMEE6.Tailoring the strong coupling regime in III-nitride based microcavities for room temperature polariton laser applications
Physica Status Solidi C. 2009. DOI : 10.1002/pssc.200982563.High reflectivity airgap distributed Bragg reflectors realized by wet etching of AlInN sacrificial layers
Applied Physics Letters. 2009. DOI : 10.1063/1.3259720.Quantum confinement dependence of the energy splitting and recombination dynamics of A and B excitons in a GaN/AlGaN quantum well
Physical Review B. 2009. DOI : 10.1103/PhysRevB.79.245316.Homogeneous and inhomogeneous linewidth broadening of single polar GaN/AlN quantum dots
2009. International Workshop on Nitride Semiconductors, Montreux, SWITZERLAND, Oct 06-10, 2008. p. S598 - S601. DOI : 10.1002/pssc.200880971.Al0.83In0.17N lattice-matched to GaN used as an optical blocking layer in GaN-based edge emitting lasers
Applied Physics Letters. 2009. DOI : 10.1063/1.3138136.Spontaneous polarization buildup in a room-temperature polariton laser
Physical Review Letters. 2008. DOI : 10.1103/PhysRevLett.101.136409.High quality nitride based microdisks obtained via selective wet etching of AlInN sacrificial layers
Applied Physics Letters. 2008. DOI : 10.1063/1.2917452.Blue laser diodes including lattice-matched Al0.83In0.17N bottom cladding layer
Electronics Letters. 2008. DOI : 10.1049/el:20080495.Impact of quantum confinement and quantum confined Stark effect on biexciton binding energy in GaN/AlGaN quantum wells
Applied Physics Letters. 2008. DOI : 10.1063/1.2973897.Complex behavior of biexcitons in GaN quantum dots due to a giant built-in polarization field
Physical Review B. 2008. DOI : 10.1103/PhysRevB.77.075306.Large vacuum Rabi splitting in a multiple quantum well GaN-based microcavity in the strong-coupling regime
Physical Review B. 2008. DOI : 10.1103/PhysRevB.77.085310.Nonpolar GaN-based microcavity using AlN/GaN distributed bragg reflector
Applied Physics Letters. 2008. DOI : 10.1063/1.2857500.Room temperature polariton lasing in a GaN/AlGaN multiple quantum well microcavity
Applied Physics Letters. 2008. DOI : 10.1063/1.2966369.Biexciton kinetics in GaN quantum wells: Time-resolved and time-integrated photoluminescence measurements
Physical Review B. 2008. DOI : 10.1103/PhysRevB.77.125342.Narrow UV emission from homogeneous GaN/AlGaN quantum wells
Applied Physics Letters. 2007. DOI : 10.1063/1.2429027.Effects of Polarization in Optoelectronic Quantum Structures
Polarization Effects in Semiconductors: From Ab Initio Theory to Device Applications; Springer, 2007. p. 467 - 512.a-plane GaN grown on r-plane sapphire substrates by hydride vapor phase epitaxy
Journal of Crystal Growth. 2007. DOI : 10.1016/j.jcrysgro.2006.11.010.Blue lasing at room temperature in an optically pumped lattice-matched AlInN/GaN VCSEL structure
Electronics Letters. 2007. DOI : 10.1049/el:20071226.Current status of AlInN layers lattice-matched to GaN for photonics and electronics
Journal of Physics D-Applied Physics. 2007. DOI : 10.1088/0022-3727/40/20/s16.Strain relaxation of AlN epilayers Stranski-Krastanov GaN/AlN quantum dots grown by organic vapor phase epitaxy
Journal of Crystal Growth. 2007. DOI : 10.1016/j.jcrysgro.2006.12.005.Efficient current injection scheme for nitride vertical cavity surface emitting lasers
Applied Physics Letters. 2007. DOI : 10.1063/1.2431484.Growth mode induced carrier localization in InGaN/GaN quantum wells
Philosophical Magazine. 2007. DOI : 10.1080/14786430701271942.Blue lasing at room temperature in high quality factor GaN/AlInN microdisks with InGaN quantum wells
Applied Physics Letters. 2007. DOI : 10.1063/1.2460234.Nitride-based heterostructures grown by MOCVD for near- and mid-infrared intersubband transitions
Physica Status Solidi (a). 2007. DOI : 10.1002/pssa.200622483.Room-temperature polariton lasing in semiconductor microcavities
Physical Review Letters. 2007. DOI : 10.1103/PhysRevLett.98.126405.Impact of inhomogeneous excitonic broadening on the strong exciton-photon coupling in quantum well nitride microcavities
Physical Review B. 2006. DOI : 10.1103/PhysRevB.73.153305.Room temperature polariton luminescence from a GaN/AlGaN quantum well microcavity
Applied Physics Letters. 2006. DOI : 10.1063/1.2335404.Impact of disorder on high quality factor III-V nitride microcavities
Applied Physics Letters. 2006. DOI : 10.1063/1.2420788.Crack-free highly reflective AlInN/AlGaN bragg mirrors for UV applications
Applied Physics Letters. 2006. DOI : 10.1063/1.2167399.Room-temperature polariton luminescence from a bulk GaN microcavity
Physical Review B. 2006. DOI : 10.1103/PhysRevB.73.033315.Stranski-Krastanov GaN/AlN quantum dots grown by metal organic vapor phase epitaxy
Journal of Applied Physics. 2006. DOI : 10.1063/1.2189975.High quality thin GaN templates grown by hydride vapor phase epitaxy on sapphire substrates
Applied Physics Letters. 2006. DOI : 10.1063/1.2213175.Progresses in III-nitride distributed Bragg reflectors and microcavities using AlInN/GaN materials
Physica Status Solidi B-Basic Solid State Physics. 2005. DOI : 10.1002/pssb.200560968.Crack-free fully epitaxial nitride microcavity using highly reflective AllnN/GaN Bragg mirrors
Applied Physics Letters. 2005. DOI : 10.1063/1.1849851.Lattice-matched distributed Bragg reflectors for nitride-based vertical cavity surface emitting lasers
Electronics Letters. 2005. DOI : 10.1049/el:20057334.Midinfrared intersubband absorption in lattice-matched AlInN/GaN multiple quantum wells
Applied Physics Letters. 2005. DOI : 10.1063/1.204559.Recent progress in the growth of highly reflective nitride-based distributed Bragg reflectors and their use in microcavities
Japanese Journal of Applied Physics Part 1-Regular Papers Brief Communications & Review Papers. 2005. DOI : 10.1143/jjap.44.7207.High-reflectivity AlxGa1-xN/AlyGa1-yN distributed Bragg reflectors with peak wavelength around 350 nm
Applied Physics Letters. 2004. DOI : 10.1063/1.1766404.Dependence of stimulated scattering in semiconductor microcavities on pump power, angle, and energy
Physical Review B. 2003. DOI : 10.1103/PhysRevB.68.115325.Strong coupling in high-finesse organic semiconductor microcavities
Applied Physics Letters. 2003. DOI : 10.1063/1.1637146.Photoluminescence emission and Raman scattering polarization in birefringent organic microcavities in the strong coupling regime
Journal Of Applied Physics. 2003. DOI : 10.1063/1.1563826.Links between hydrogen bonding, residual stress, structural properties and metastability in hydrogenated nanostructured silicon thin films
Journal of Physics: Condensed Matter. 2003. DOI : 10.1088/0953-8984/15/43/004.Continuous wave stimulation in semiconductor microcavities in the strong coupling limit
Semiconductor Science And Technology. 2003. DOI : 10.1088/0268-1242/18/10/303.Structural properties and recombination processes in hydrogenated polymorphous silicon
European Physical Journal-Applied Physics. 2003. DOI : 10.1051/epjap:2003030.Evolution with light-soaking of polymorphous material prepared at 423 K
Journal of Non-Crystalline Solids. 2002. DOI : 10.1016/S0022-3093(01)01020-1.Polariton traps in semiconductor microcavities
Physica E-Low-Dimensional Systems & Nanostructures. 2002. DOI : 10.1016/S1386-9477(02)00146-7.Polariton-polariton interactions and stimulated scattering in semiconductor microcavities
Materials Science & Engineering C-Biomimetic And Supramolecular Systems. 2002. DOI : 10.1016/S0928-4931(01)00433-7.Hydrogen related bonding structure in hydrogenated polymorphous and microcrystalline silicon
Journal of Non-Crystalline Solids. 2002. DOI : 10.1016/S0022-3093(01)00951-6.High-occupancy effects and stimulation phenomena in semiconductor microcavities
Ieee Journal Of Selected Topics In Quantum Electronics. 2002. DOI : 10.1109/JSTQE.2002.804234.Pump angle and laser energy dependence of stimulated scattering in microcavities
Physica Status Solidi (a). 2002. DOI : 10.1002/1521-396X(200204)190:2<333::AID-PSSA333>3.0.CO;2-%23.Transition from strong to weak coupling and the onset of lasing in semiconductor microcavities
Physical Review B. 2002. DOI : 10.1103/PhysRevB.65.205310.Stimulated polariton scattering in semiconductor microcavities: New physics and potential applications
Advanced Materials. 2001. DOI : 10.1002/1521-4095(200111)13:22<1725::AID-ADMA1725>3.0.CO;2-Z.Thermoelectric power in undoped hydrogenated polymorphous silicon
Thin Solid Films. 2000. DOI : 10.1016/S0040-6090(00)00742-2.Structural, optical and electronic properties of hydrogenated polymorphous silicon films deposited at 150 degrees C
Journal of Non-Crystalline Solids. 2000. DOI : 10.1016/S0022-3093(99)00833-9.Very low densities of localized states at the Fermi level in hydrogenated polymorphous silicon from capacitance and space-charge-limited current measurements
Applied Physics Letters. 1999. DOI : 10.1063/1.125348.Some electronic and metastability properties of a new nanostructured material: hydrogenated polymorphous silicon
Philosophical Magazine B-Physics of Condensed Matter Statistical Mechanics Electronic Optical and Magnetic Properties. 1999. DOI : 10.1080/13642819908214860.Midgap density of states in hydrogenated polymorphous silicon
Journal of Applied Physics. 1999. DOI : 10.1063/1.370829.Structural properties depicted by optical measurements in hydrogenated polymorphous silicon
Journal of Physics: Condensed Matter. 1999. DOI : 10.1088/0953-8984/11/44/313.Determination of the midgap density of states and capture cross-sections in polymorphous silicon by space-charge-limited conductivity and relaxation
Philosophical Magazine Letters. 1999. DOI : 10.1080/095008399176832.Doctorant·es actuel·les
Samuele Brunetta, Giulio Carotta
A dirigé les thèses EPFL de
Marlene Glauser, Georg Rossbach, Ian Rousseau, Joachim Ciers, Pierre Lottigier
Cours
Physics of photonic semiconductor devices
Série de cours couvrant la physique des hétérostructures quantiques, des microcavités diélectriques et des cavités à cristaux photoniques ainsi que les propriétés des principaux dispositifs d'émission de lumière que sont les diodes électroluminescentes (LEDs) et les diodes laser (LDs).
Physique (pour MAN)
PREPA-033
Le cours de physique expose comment aborder des phénomènes naturels par une modélisation adéquate, ainsi que les outils mathématiques nécessaires, en particulier l'emploi du calcul vectoriel. L'accent est mis sur les phénomènes de la vie courante, pouvant être décrits par la mécanique newtonienne.
Semiconductor physics and light-matter interaction
Cours sur la physique des semiconducteurs et les propriétés de la jonction p-n qui est au cœur des dispositifs tels que les LED et les diodes laser. La dernière partie traite des phénomènes d'interaction lumière-matière dans les semiconducteurs tels que l'absorption, l'émission spontanée et stimulée